JP2003324248A5 - - Google Patents

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Publication number
JP2003324248A5
JP2003324248A5 JP2002127882A JP2002127882A JP2003324248A5 JP 2003324248 A5 JP2003324248 A5 JP 2003324248A5 JP 2002127882 A JP2002127882 A JP 2002127882A JP 2002127882 A JP2002127882 A JP 2002127882A JP 2003324248 A5 JP2003324248 A5 JP 2003324248A5
Authority
JP
Japan
Prior art keywords
layer
active layer
laser device
lattice constant
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002127882A
Other languages
English (en)
Japanese (ja)
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JP2003324248A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2002127882A priority Critical patent/JP2003324248A/ja
Priority claimed from JP2002127882A external-priority patent/JP2003324248A/ja
Priority to US10/423,222 priority patent/US7113532B2/en
Priority to TW092110161A priority patent/TWI231635B/zh
Publication of JP2003324248A publication Critical patent/JP2003324248A/ja
Publication of JP2003324248A5 publication Critical patent/JP2003324248A5/ja
Pending legal-status Critical Current

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JP2002127882A 2002-04-30 2002-04-30 半導体レーザ素子 Pending JP2003324248A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002127882A JP2003324248A (ja) 2002-04-30 2002-04-30 半導体レーザ素子
US10/423,222 US7113532B2 (en) 2002-04-30 2003-04-25 Semiconductor laser device
TW092110161A TWI231635B (en) 2002-04-30 2003-04-30 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002127882A JP2003324248A (ja) 2002-04-30 2002-04-30 半導体レーザ素子

Publications (2)

Publication Number Publication Date
JP2003324248A JP2003324248A (ja) 2003-11-14
JP2003324248A5 true JP2003324248A5 (https=) 2005-04-07

Family

ID=29243875

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002127882A Pending JP2003324248A (ja) 2002-04-30 2002-04-30 半導体レーザ素子

Country Status (3)

Country Link
US (1) US7113532B2 (https=)
JP (1) JP2003324248A (https=)
TW (1) TWI231635B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9917414B2 (en) 2015-07-15 2018-03-13 International Business Machines Corporation Monolithic nanophotonic device on a semiconductor substrate
CN110600996B (zh) * 2019-09-26 2024-05-14 苏州矩阵光电有限公司 一种量子阱层结构、半导体激光器及制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4034311A (en) * 1973-02-26 1977-07-05 Matsushita Electronics Corporation Semiconductor laser
US4512022A (en) * 1982-07-13 1985-04-16 At&T Bell Laboratories Semiconductor laser having graded index waveguide
JPH07297485A (ja) * 1994-04-28 1995-11-10 Mitsubishi Electric Corp 半導体レーザ装置，及びその製造方法
JP2000101198A (ja) 1998-09-18 2000-04-07 Fuji Photo Film Co Ltd 半導体レーザ装置
JP2000114654A (ja) 1998-09-30 2000-04-21 Fuji Photo Film Co Ltd 半導体レーザ装置
US6603784B1 (en) * 1998-12-21 2003-08-05 Honeywell International Inc. Mechanical stabilization of lattice mismatched quantum wells

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