TWI231635B - Semiconductor laser device - Google Patents
Semiconductor laser device Download PDFInfo
- Publication number
- TWI231635B TWI231635B TW092110161A TW92110161A TWI231635B TW I231635 B TWI231635 B TW I231635B TW 092110161 A TW092110161 A TW 092110161A TW 92110161 A TW92110161 A TW 92110161A TW I231635 B TWI231635 B TW I231635B
- Authority
- TW
- Taiwan
- Prior art keywords
- active layer
- layer
- lattice constant
- laser device
- semiconductor laser
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 64
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000013078 crystal Substances 0.000 claims description 25
- 238000005253 cladding Methods 0.000 claims description 16
- 230000007423 decrease Effects 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 9
- 238000000034 method Methods 0.000 description 10
- 230000031700 light absorption Effects 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 230000003313 weakening effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000003530 quantum well junction Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
- H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
- H01S5/34366—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on InGa(Al)AS
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002127882A JP2003324248A (ja) | 2002-04-30 | 2002-04-30 | 半導体レーザ素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200405633A TW200405633A (en) | 2004-04-01 |
| TWI231635B true TWI231635B (en) | 2005-04-21 |
Family
ID=29243875
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092110161A TWI231635B (en) | 2002-04-30 | 2003-04-30 | Semiconductor laser device |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7113532B2 (https=) |
| JP (1) | JP2003324248A (https=) |
| TW (1) | TWI231635B (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9917414B2 (en) | 2015-07-15 | 2018-03-13 | International Business Machines Corporation | Monolithic nanophotonic device on a semiconductor substrate |
| CN110600996B (zh) * | 2019-09-26 | 2024-05-14 | 苏州矩阵光电有限公司 | 一种量子阱层结构、半导体激光器及制备方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4034311A (en) * | 1973-02-26 | 1977-07-05 | Matsushita Electronics Corporation | Semiconductor laser |
| US4512022A (en) * | 1982-07-13 | 1985-04-16 | At&T Bell Laboratories | Semiconductor laser having graded index waveguide |
| JPH07297485A (ja) * | 1994-04-28 | 1995-11-10 | Mitsubishi Electric Corp | 半導体レーザ装置，及びその製造方法 |
| JP2000101198A (ja) | 1998-09-18 | 2000-04-07 | Fuji Photo Film Co Ltd | 半導体レーザ装置 |
| JP2000114654A (ja) | 1998-09-30 | 2000-04-21 | Fuji Photo Film Co Ltd | 半導体レーザ装置 |
| US6603784B1 (en) * | 1998-12-21 | 2003-08-05 | Honeywell International Inc. | Mechanical stabilization of lattice mismatched quantum wells |
-
2002
- 2002-04-30 JP JP2002127882A patent/JP2003324248A/ja active Pending
-
2003
- 2003-04-25 US US10/423,222 patent/US7113532B2/en not_active Expired - Fee Related
- 2003-04-30 TW TW092110161A patent/TWI231635B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US7113532B2 (en) | 2006-09-26 |
| TW200405633A (en) | 2004-04-01 |
| JP2003324248A (ja) | 2003-11-14 |
| US20030202551A1 (en) | 2003-10-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |