JP2003324228A - Method for bonding semiconductor light emitting element - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent a projection formed by excess solder from being formed on the light emitting surface of a semiconductor light emitting element without requiring complicated steps in a method for bonding the semiconductor light emitting element. <P>SOLUTION: In a method for bonding a semiconductor light emitting element, a solder layer 6 is formed on the upper surface of a sub-mount 2 to which a semiconductor laser element, which is the semiconductor light emitting element having a light emitting surface, is bonded; a protection layer 9 covering the surface of the solder layer 6, and a guide layer 7 extending from the protection layer 9 positioned on the side face 2a of the sub-mount 2 are integrally formed; and the light emitting surface is positioned on the side face 2a of the sub-mount 2 having the guide layer 7 formed thereon to bond the semiconductor layer element. By this, when bonding the semiconductor element, the excess solder which flows out from the melted solder layer 6 spreads over the side face 2a of the sub-mount 2 along the guide layer 7. Therefore, without requiring complicated steps, a projection formed by the excess solder can be prevented from being formed on the light emitting side of the semiconductor laser element. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a method for fixing a semiconductor light emitting device.

[0002]

2. Description of the Related Art A semiconductor laser device as a semiconductor light emitting device has a semiconductor laser element which is a semiconductor light emitting element,
It is used in various devices such as laser beam printers and optical disk drives. Here, FIG. 5 is a vertical sectional side view showing a peripheral portion of a semiconductor laser element attached to a conventional semiconductor laser device. As shown in FIG. 5, the submount 101 to which the semiconductor laser device 100 is fixed is C
It is fixed on the heat sink 102 made of u with solder 103. A metal layer 104 to be an electrode is formed on the submount 101, and a solder layer 105 for fixing the semiconductor laser device 100 to the submount 101 is formed on the metal layer 104.

In the semiconductor laser device 100, the surface located in the vicinity of the pn junction (junction) 106 is located on the submount 101 side, and the emitting surface 100a for emitting the laser beam L is a side surface of the submount 101. It is positioned on the same plane as 101 a and fixed to the upper surface of the submount 101 by the solder layer 105. The surface of the semiconductor laser device 100 located near the pn junction 106 is positioned on the submount 101 side.
The heat dissipation efficiency of the semiconductor laser device 100 is improved by using the junction down method for fixing the semiconductor laser device 100.

Here, the fixing process for fixing the semiconductor laser device 100 to the upper surface of the submount 101 is performed as follows. First, the submount 101 on which the solder layer 105 is formed is placed in a nitrogen atmosphere at about 250 ° C., which is lower than the eutectic temperature, and the semiconductor laser device 100 is mounted on the solder layer 105. Then, the solder layer 105 is set to 32.
The semiconductor laser device 100 is fixed to the upper surface of the submount 101 by heating to about 0 ° C. to melt and then rapidly cooling to a eutectic state.

In such a fixing process, when the solder layer 105 is melted, excess solder 105a flows out from the melted solder layer 105, and the semiconductor laser device 100
Occurrence of swelling due to the surplus solder 105a may occur on the exit surface 100a of the (see FIG. 5). On the other hand, the pn junction 106 of the semiconductor laser device 100 is positioned at a distance of several μm from the solder layer 105. Therefore, when the swelling due to the surplus solder 105a occurs, the laser beam L emitted from the semiconductor laser device 100 is scattered by the swelling, which causes a problem that the quality of the laser beam L deteriorates.

As a method for preventing such a rise,
Generally, the semiconductor laser device 100 is mounted on the submount 101 by projecting the emission surface 100a of the semiconductor laser device 100 by about 10 μm from the side surface 101a of the submount 101.
The method of sticking to the upper surface of is used. However, with this method, the heat dissipation of the semiconductor laser device 100 is insufficient, and the life of the semiconductor laser device 100 is shortened. Therefore, the emission surface 100 of the semiconductor laser device 100
A method has been proposed in which a is not projected from the side surface 101a of the submount 101, and swelling due to excess solder 105a is prevented.

As this method, there has been proposed a method of forming a solder layer 105 on the upper surface of the submount 101, which is slightly smaller than the shape of the semiconductor laser device 100. As another method, in Japanese Patent Laid-Open No. 6-350202, the metal layer 10 formed on the upper surface of the submount 101 is disclosed.
4 has been proposed to extend to the side surface 101a of the submount 101. In this method, the surplus solder 105a flowing out from the melted solder layer 105 is removed by the metal layer 104 located on the side surface 101a of the submount 101.
Spreads along the surface of the. As a result, the excess solder 105
It is possible to prevent swelling due to a.

[0008]

However, the size of the solder layer 10 is smaller than the shape of the semiconductor laser device 100.
5 and the side surface 101a of the submount 101
It is difficult to form the metal layer 104. In particular, in order to form the metal layer 104 on the side surface 101a of the submount 101, a complicated process such as a mask process is required, and there is a problem that the number of processes also increases.

On the other hand, when the semiconductor laser device 100 is fixed to the upper surface of the submount 101, the adhesion failure of the semiconductor laser device 100 may occur due to deterioration of the solder layer 105. That is, Sn contained in the solder layer 105 is oxidized and a coating film is formed on the surface of the solder layer 105 during preheating to heat the solder layer 105 to about 250 ° C. before fixing the semiconductor laser device 100. so,
There is a problem that poor adhesion of the semiconductor laser device 100 occurs.

It is an object of the present invention to provide a method for fixing a semiconductor light emitting device, which can prevent swelling due to excess solder from occurring on the emission surface of the semiconductor light emitting device without requiring complicated steps. is there.

An object of the present invention is to provide a method for fixing a semiconductor light emitting device, which can prevent the adhesion failure of the semiconductor light emitting device.

[0012]

According to a first aspect of the present invention, there is provided a method of fixing a semiconductor light emitting device, wherein the semiconductor light emitting device having an emission surface for emitting light is a fixed surface of a member to be fixed. A first layer forming step of forming a solder layer for fixing the semiconductor light emitting element on the upper surface, a protective layer covering the surface of the solder layer and a side surface of the adhered member extending from the protective layer. Second layer forming step of integrally forming a guide layer for guiding the solder flowing out from the solder layer to the side surface of the adhered member when the solder layer is melted, and after the second layer forming step. A mounting step of mounting the semiconductor light emitting device by positioning the emission surface on the side surface side of the adhered member on which the guide layer is formed via the solder layer and the protective layer on the upper surface of the adhered member; After the second layer forming step A melting step of melting and the protective layer and the solder layer, after said placing step and the melting step,
A solidifying step of solidifying the solder layer fused with the protective layer in the melting step.

Therefore, the solder layer is formed on the upper surface of the member to be fixed, and then the protective layer and the guide layer are integrally formed, and the emitting surface is positioned on the side surface of the member to be fixed on which the guide layer is formed. By fixing the semiconductor light emitting element, excess solder flowing out from the melted solder layer spreads to the side surface of the adhered member along the guide layer, and further, when the solder layer is melted, deterioration of the solder layer, for example, solder S to layer
When n is contained, it becomes possible to prevent Sn from being oxidized.

According to a second aspect of the present invention, in the method for fixing a semiconductor light emitting device according to the first aspect, in the second layer forming step, metal is vapor-deposited obliquely from above on the upper surface of the adhered member. Then, the protective layer and the guide layer are formed.

Therefore, by depositing the metal obliquely from above on the upper surface of the adhered member, a complicated process,
For example, the protective layer and the guide layer can be easily formed without performing a mask process or the like.

According to a third aspect of the present invention, in the method for fixing the semiconductor light emitting element according to the second aspect, the member to be fixed is
A plurality of metal wires are arranged at intervals such that they extend from the lower end toward the upper end on the side surface on which the metal is vapor-deposited to form a portion on which the metal is not vapor-deposited.

Therefore, the guide layer is formed so as not to reach the lower end of the adhered member by forming a portion on the side surface of the adhered member that extends from the lower end toward the upper end and on which metal is not deposited.

According to a fourth aspect of the present invention, in the method for fixing a semiconductor light emitting element according to the first, second or third aspect, the protective layer is a metal selected from a plurality of metals forming the solder layer. Has been formed.

Therefore, even if the protective layer is melted and fused with the solder layer when the solder layer is melted by forming the protective layer with a metal selected from a plurality of metals constituting the solder layer, The composition of the solder layer does not change.

The invention according to claim 5 is the invention as defined in claims 1, 2, and 3.
Alternatively, in the method for fixing a semiconductor light emitting device according to the fourth aspect, the solder layer is made of an Au—Sn alloy and the guide layer is made of Au.

Therefore, by forming the solder layer of Au-Sn alloy and the guide layer of Au, since the wettability of Au is good for Au-Sn alloy, the solder flowing out from the melted solder layer is used. Spread easily along the guide layer.

According to a sixth aspect of the present invention, there is provided a method for fixing a semiconductor light emitting device, wherein the semiconductor light emitting device is provided on an upper surface of a member to be fixed to which the semiconductor light emitting device having an emission surface for emitting light is fixed. A layer forming step of forming a solder layer for fixing the element, and the solder flowing out from the solder layer when the solder layer is melted by partially exposing the adhered member from a side surface thereof. A guide portion forming step of forming a guide portion that leads to a side surface of the member, and after the layer forming step and the guide portion forming step, the guide portion of the adhered member is provided on the upper surface of the adhered member via the solder layer. A mounting step of positioning the semiconductor light emitting element by positioning the emission surface on the exposed side surface, a melting step of melting the solder layer after the layer forming step and the guide portion forming step,
And a solidification step of solidifying the solder layer melted in the melting step after the placing step and the melting step.

Accordingly, the semiconductor light emitting device is formed by forming a guide portion on the adhered member, a part of which is exposed from the side surface, and locating the emission surface on the upper surface of the adhered member on the side surface where the guide portion of the adhered member is formed. By fixing, the excess solder flowing out from the melted solder layer spreads along the guide portion to the side surface of the fixed member.

According to a seventh aspect of the present invention, in the method for fixing a semiconductor light emitting element according to the sixth aspect, the guide portion forms an upper surface of the adhered member on a adhered member substrate for forming the adhered member. Forming a metal portion that extends inward from the surface, and cutting out the adhered member from the adhered member substrate such that a part of the metal portion is exposed from a cut surface that is a side surface of the adhered member. The metal portion is partially exposed from the side surface of the fixing member.

Therefore, when forming the member to be fixed, the guide portion is easily formed on the member to be fixed by forming the metal portion which is partially exposed from the side surface of the member to be fixed.

According to an eighth aspect of the present invention, in the method for fixing a semiconductor light emitting element according to the sixth or seventh aspect, the guide portion is formed of Pt.

Therefore, by forming the guide portion with Pt, the wettability of Pt is good for the solder, so that the solder flowing out from the molten solder layer spreads easily along the guide portion.

[0028]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows a first embodiment of the present invention.
And it demonstrates based on FIG. The present embodiment is an example of a method of fixing a semiconductor light emitting element for fixing a semiconductor light emitting element to a member to be fixed. In the present embodiment, a fixing method for fixing the semiconductor laser element 1 to the submount 2 as a member to be fixed in a semiconductor laser device including the semiconductor laser element 1 as a semiconductor light emitting element will be described. Here, FIG. 1A is a vertical sectional side view showing a peripheral portion of the semiconductor laser element 1 attached to the semiconductor laser device of the present embodiment, and FIG. 1B is an external perspective view showing the submount 2. .

As shown in FIG. 1, a submount 2 to which a semiconductor laser device 1 having an emission surface 1a for emitting a laser beam L is fixed is fixed on a heat sink 3 made of Cu with solder 4. There is. A metal layer 5 to be an electrode is formed on the upper surface of the submount 2 to be fixed, and a solder layer 6 for fixing the semiconductor laser device 1 to the submount 2 is formed on the metal layer 5. Has been done. The solder layer 6 is formed with a thickness of about 3 μm only in the region where the semiconductor laser device 1 is mounted, but the present invention is not limited to this.

The submount 2 is used for radiating heat generated in the semiconductor laser device 1 and for relieving thermal stress with the heat sink 3, and the solder layer 6 is melted on the side surface 2a of the submount 2. A guide layer 7 is provided to guide the surplus solder 6a flowing out from the solder layer 6 to the side surface 2a. This guide layer 7 is provided on the side surface 2 of the submount 2.
It is formed so that it extends from the upper end of a to the lower end and does not reach the lower end.

In the semiconductor laser device 1, the surface located in the vicinity of the pn junction (junction) 8 is located on the submount 2 side, and the emission surface 1a is further located on the submount 2 side.
Is positioned on the side surface 2a side where the guide layer 7 is formed,
It is fixed to the upper surface of the submount 2 by a solder layer 6. At this time, the emission surface 1a of the semiconductor laser device 1 is located on the same plane as the side surface 2a of the submount 2 on which the guide layer 7 is formed. The heat dissipation efficiency of the semiconductor laser element 1 is improved by using the junction down method in which the surface located near the pn junction 8 is located on the submount 2 side and the semiconductor laser element 1 is fixed.

Here, as a material for forming the submount 2, AlN (aluminum nitride), silicon, or the like is used. These are materials having high thermal conductivity and a linear expansion coefficient close to that of GaAs used for the substrate of the semiconductor laser device 1. Ti, Pt, and Au are used as the material for forming the metal layer 5. By sequentially stacking these materials, the metal layer 5 becomes Ti (0.01 μm).
m) / Pt (0.05 μm) / Au (0.5 μm). As a material for forming the solder layer 6, Au having a high adhesive strength and a low eutectic temperature of 280 ° C.
-Sn eutectic solder (Au 80 wt%, Sn 20 wt%)
Is used. The guide layer 7 is formed of Au as a metal forming the solder layer 6, and has good wettability with respect to Au—Sn eutectic solder.

A method of fixing the semiconductor laser device 1 for fixing the semiconductor laser device 1 to the submount 2 in the semiconductor laser device having such a structure will be described. This is composed of a layer forming step of forming various layers of the metal layer 5, the solder layer 6 and the guide layer 7 and a fixing step of fixing the semiconductor laser element 1 to the upper surface of the submount 2 on which the various layers are formed. Has been done.

First, the layer forming step will be described. Here, FIG. 2 is a vertical sectional side view showing an outline of the layer forming step.

As shown in FIG. 2A, the submount 2
The metal layer 5 is formed on the submount substrate 2b for forming the. Next, on the metal layer 5, the semiconductor laser device 1
The solder layer 6 is formed in the region where the is placed. This is the first layer forming step.

A plurality of submounts 2 having the size of the semiconductor laser element 1 are cut out from the submount substrate 2b on which the solder layer 6 is formed by using a dicing saw or the like.

After that, the cut-out submount 2 covers the surface of the solder layer 6 to prevent deterioration of the solder layer 6, that is, oxidation of Sn contained in the solder layer 6, and a sublayer extending from the protective layer 9 to extend from the protective layer 9. The guide layer 7 located on the side surface 2a of the mount 2 is integrally formed. This is the second layer forming step.

More specifically, as shown in FIG. 2B, a plurality of submounts 2 are placed in a vacuum vapor deposition apparatus and arranged at regular intervals, and Au is mounted on the submount 2 obliquely above the upper surface of the submount 2. Is deposited (in the direction of the arrow in FIG. 2B).

As a result, as shown in FIG. 2C, the protective layer 9 is formed on the surface of the solder layer 6, and the guide layer 7 extending from the protective layer 9 is formed on the side surface 2a of the submount 2. To be done. By setting the angle when Au is vapor-deposited obliquely above the upper surface of the submount 2 and the interval when arranging a plurality of submounts 2 and the like, the side surface 2a of the submount 2 extends from the lower end to the upper end. The guide layer 7 is formed so as not to reach the lower end of the side surface 2a of the submount 2 by forming a portion where the metal is not vapor-deposited.

Next, the fixing step will be described. The submount 2 having the guide layer 7 formed on the side surface 2a is placed in a nitrogen atmosphere at a temperature of about 250 ° C. lower than the eutectic temperature, and the solder layer 6 and the protective layer 9 are provided on the upper surface of the submount 2 to form The exit surface 1 is provided on the side surface 2a side on which the guide layer 7 is formed.
The semiconductor laser element 1 is placed with a positioned. This is the placing step.

Thereafter, the temperature in the nitrogen atmosphere is raised to heat the solder layer 6 to about 320 ° C. to melt it, and at the same time, the protective layer 9 is melted. This is the melting process. As a result, the solder layer 6 is fused with the protective layer 9.

At this time, the surplus solder 6a flowing out from the melted solder layer 6 spreads on the side surface 2a of the submount 2 along the guide layer 7 (see FIG. 1A). As a result, it is possible to prevent swelling due to the surplus solder 6a.

Finally, the solder layer 6 fused with the protective layer 9 is rapidly cooled to a eutectic state. This is the solidification process. As a result, the semiconductor laser device 1 is fixed to the upper surface of the submount 2.

As described above, in the present embodiment, the solder layer 6 is formed on the upper surface of the submount 2, and then the guide layer 7 and the protective layer 9 are integrally formed. By fixing the semiconductor laser element 1 by arranging the emitting surface 1a on the side surface 2a side where the 7 is formed, the surplus solder 6a flowing out from the melted solder layer 6 is guided along the guide layer 7 and the side surface 2a of the submount 2 Therefore, it is possible to prevent swelling due to the excess solder 6a from occurring on the emitting surface 1a of the semiconductor laser element 1 without requiring a complicated process, and further preheat the solder layer 6 in the fixing process. At this time, it becomes possible to prevent Sn contained in the solder layer 6 from being oxidized.
It is possible to prevent poor adhesion of the sub-mount 2 to the sub-mount 2.

Further, by depositing metal obliquely from above on the upper surface of the submount 2, complicated steps,
For example, the guide layer 7 and the protective layer 9 can be easily formed without performing a mask process or the like. Further, since the guide layer 7 is formed so as not to reach the lower end of the side surface 2a of the submount 2 by forming a portion on the side surface 2a of the submount 2 that extends from the lower end to the upper end direction and metal is not deposited, the heat sink is formed. 3 and the semiconductor laser device 1 can be electrically insulated.

Further, since the solder layer 6 is made of an Au—Sn alloy and the guide layer 7 is made of Au, the wettability of Au is good for the Au—Sn alloy. Since the surplus solder 6a that has flowed out easily spreads along the guide layer 7, it is possible to reliably prevent the occurrence of swelling due to the surplus solder 6a. Further, by forming the protective layer 9 with Au selected from the metals forming the solder layer 6, even if the protective layer 9 melts and fuses with the solder layer 6 when the solder layer 6 is melted, Since the composition of 6 does not change, the composition of the solder layer 6 can be maintained even if the solder layer 6 is melted.

A second embodiment of the present invention is shown in FIGS.
It will be described based on. The present embodiment is an example of a method for fixing a semiconductor light emitting element, which fixes a semiconductor light emitting element to a member to be fixed. In the present embodiment, a fixing method for fixing the semiconductor laser element 1 to the submount 20 as a member to be fixed in a semiconductor laser device including the semiconductor laser element 1 as a semiconductor light emitting element will be described. Here, FIG. 3A is a vertical cross-sectional side view showing the peripheral portion of the semiconductor laser device 1 attached to the semiconductor laser device of the present embodiment, and FIG. 3B is an external perspective view showing the submount 20. . The same parts as those described in the first embodiment are designated by the same reference numerals.

As shown in FIG. 3, the submount 20 to which the semiconductor laser device 1 having the emission surface 1a for emitting the laser beam L is fixed is fixed on the heat sink 3 made of Cu by the solder 4. There is. A metal layer 5 to be an electrode is formed on an upper surface of the submount 20 to be fixed.
A solder layer 6 for fixing the semiconductor laser device 1 to the submount 20 is formed on the metal layer 5. The solder layer 6 is formed with a thickness of about 3 μm only in the region where the semiconductor laser device 1 is mounted, but the present invention is not limited to this.

The submount 20 is a semiconductor laser device 1.
It is used to dissipate the heat generated in 1 and to alleviate the thermal stress with the heat sink 3. In this submount 20, the surplus solder 6a flowing out from the solder layer 6 when the solder layer 6 is melted by exposing a part of the side surface 20a and the side surface 20b which face each other is provided on the side surface 20 of the submount 20.
Two guide portions 21 leading to a are provided. The guide portion 22 is formed so as not to reach the lower surface of the submount 20. Furthermore, the guide portion 22 is formed so that the exposed portion has a width that extends from the upper end of the side surface 20a of the submount 20 toward the lower end and can guide the excess solder 6a.

In the semiconductor laser device 1, the surface located near the pn junction (junction) 8 has the submount 20.
Is positioned on the side, the emission surface 1a is positioned on the side surface 20a side where the guide portion 21 of the submount 20 is formed, and is fixed to the upper surface of the submount 20 by the solder layer 6. At this time, the emission surface 1a of the semiconductor laser device 1 is located on the same plane as the side surface 20a of the submount 20 on which the guide portion 21 is formed. The heat dissipation efficiency of the semiconductor laser device 1 is improved by using the junction down method in which the surface located near the pn junction 8 is located on the submount 20 side and the semiconductor laser device 1 is fixed.

Here, as a material for forming the submount 20, AlN (aluminum nitride), silicon, or the like is used. These are materials having high thermal conductivity and a linear expansion coefficient close to that of GaAs used for the substrate of the semiconductor laser device 1. Ti, Pt, and Au are used as the material for forming the metal layer 5. By sequentially stacking these materials, the metal layer 5 becomes Ti (0.01 μm).
m) / Pt (0.05 μm) / Au (0.5 μm). As a material for forming the solder layer 6, Au having a high adhesive strength and a low eutectic temperature of 280 ° C.
-Sn eutectic solder (Au 80 wt%, Sn 20 wt%)
Is used. As a material for forming the guide portion 21, Pt having good wettability with respect to Au—Sn eutectic solder is used, but the material is not limited to this.

A method of fixing the semiconductor laser device 1 for fixing the semiconductor laser device 1 to the submount 20 in the semiconductor laser device having such a structure will be described. This is a guide portion forming step of forming the guide portion 21 on the submount 20, a layer forming step of forming various layers of the metal layer 5 and the solder layer 6, and a sub portion where the guide portion 21 and various layers are formed. The step of fixing the semiconductor laser element 1 to the upper surface of the mount 20 is performed.

First, the guide portion forming step and the layer forming step will be described. Here, FIG. 4 is a vertical cross-sectional side view showing the outline of the guide portion forming step and the layer forming step.

As shown in FIG. 4A, AlN before sintering
A submount substrate 20c for forming the submount 20 is formed by using the two green sheets 22a and 22b formed in (1). This submount substrate 20c
Is the adhered member substrate. That is, the green sheet 2
A circular embedding hole 23 is formed in 2a by a punching device or the like, and then the green sheet 22a in which the embedding hole 23 is formed is faced up to form two green sheets 22a, 22a.
Stack b. This is a part of the guide part forming step.

Next, as shown in FIG. 4B, after filling the embedded hole 23 of the submount substrate 20c with Pt in a paste state, the submount substrate 20c is set to 600 to 1400.
The submount substrate 20c is sintered at a temperature of 0 ° C. to form the metal portion 24 extending from the surface to the inside. This is a part of the guide part forming step.

Thereafter, as shown in FIG. 4C, a metal layer 5 is formed on the surface of the submount substrate 20c, and the solder layer 6 is formed on the metal layer 5 in the region where the semiconductor laser device 1 is mounted. To form. This is the layer forming step.

Finally, on the metal part 24 so that a part of the metal part 24 is exposed from the cut surface, for example, from the broken line in FIG.
To cut a plurality of submounts 20 from the submount substrate 20c. This is a part of the guide part forming step.

As a result, the two cut surfaces of the submount 20, that is, the opposite side surfaces 20 of the submount 20.
Part of the metal portion 24 is exposed from a and the side surface 20b. Therefore, the metal portion 24 allows the submount 20 to be
Two guide portions 21 are formed, each of which is partially exposed from the side surface 20a and the side surface 20b facing each other (FIG. 3).
(See (b)).

Next, the fixing step will be described. The submount 20 having the guide portion 21 formed in the forming step is placed in a nitrogen atmosphere at a temperature lower than the eutectic temperature of about 250 ° C.
The exit surface 1a is provided on the side surface 20a side on which the zero guide portion 21 is formed.
And the semiconductor laser device 1 is mounted. This is,
It is a placing step.

Then, the temperature in the nitrogen atmosphere is raised and the solder layer 6 is heated to about 320 ° C. and melted.
This is the melting process.

At this time, the surplus solder 6a flowing out from the melted solder layer 6 spreads along the guide portion 21 to the side surface 20a of the submount 20 (see FIG. 3A). As a result, it is possible to prevent swelling due to the surplus solder 6a.

Finally, the solder layer 6 is rapidly cooled to a eutectic state. This is the solidification process. As a result, the semiconductor laser device 1 is fixed to the upper surface of the submount 20.

Therefore, in this embodiment, the guide portion 2 is partially exposed from the side surface 20a of the submount 20.
1 to form the submount 2 on the upper surface of the submount 20.
The exit surface 1a on the side surface 20a side on which the guide portion 21 of 0 is formed.
To fix the semiconductor laser element 1 to the excess solder 6 flowing out from the melted solder layer 6.
a is a side surface 20a of the submount 20 along the guide portion 21.
Since it spreads over, the excess solder 6 can be used without requiring complicated steps.
It is possible to prevent the rise due to a from occurring on the emission surface 1a of the semiconductor laser device 1.

When the submount 20 is formed, the guide portion 21 is easily formed on the submount 20 by forming the metal portion 24 which is partially exposed from the side surface 20a of the submount 20. The guide portion 21 can be easily formed without requiring any device. The heat sink 3 and the semiconductor laser device 1 can be electrically insulated by forming the guide portion 21 so as not to reach the lower surface of the submount 20.

Further, by forming two guide portions 21 which are partially exposed from the side surface 20a and the side surface 20b facing the submount 20, the light is emitted from the side surface facing the emitting surface 1a of the semiconductor laser device 1. When the laser light used as the monitor light is used as the monitor light, the laser light is not blocked by the excess solder 6a, so that the intensity of the laser light of the semiconductor laser device 1 can be accurately measured.

Since the guide portion 21 is made of Pt, the wettability of Pt is good against eutectic solder,
Since the surplus solder 6a flowing out from the melted solder layer 6 easily spreads along the guide portion 21, the surplus solder 6a
It is possible to reliably prevent the occurrence of swelling due to.

Although the guide layer 7 and the protective layer 9 are formed by vapor deposition of metal in the first embodiment, the present invention is not limited to this.

Further, in the second embodiment, the embedding hole 23 is formed in the green sheet 22a in a circular shape, but the present invention is not limited to this. For example, the embedding hole 23 is formed in a square shape. Is also good.

In each of the embodiments, the melting step is performed after the placing step, but the present invention is not limited to this, and the placing step may be performed after the melting step.

Further, in each of the embodiments, the semiconductor laser element 1 is used as the semiconductor light emitting element, but the invention is not limited to this.

Finally, in each of the embodiments, the Au-Sn alloy is used as the material for forming the solder layer 6, but the material is not limited to this, and for example, a Pb-Sn alloy, an Au-Si alloy, or the like. May be used.

[0072]

According to the method of fixing a semiconductor light emitting element of the present invention, a semiconductor light emitting element having an emission surface for emitting light is attached to an upper surface of a member to be fixed to which a semiconductor light emitting element is fixed. A first layer forming step of forming a solder layer for fixing the semiconductor light emitting element, a protective layer covering a surface of the solder layer, and extending from the protective layer and positioned on a side surface of the adhered member, A second layer forming step for integrally forming a guide layer for guiding the solder flowing out from the solder layer to the side surface of the adhered member when the solder layer is melted, and the step for forming the second layer after the second layer forming step. A mounting step of mounting the semiconductor light-emitting element by positioning the emission surface on the side surface side of the fixing member on which the guide layer is formed via the solder layer and the protective layer on the upper surface of the fixing member; After the second layer forming step, Since it has a melting step of melting the solder layer and the protective layer, and a solidifying step of solidifying the solder layer fused with the protective layer in the melting step after the placing step and the melting step, On the upper surface of the fixing member,
After the solder layer is formed, the protective layer and the guide layer are integrally formed, and the semiconductor light emitting device is fixed by positioning the emission surface on the side surface side of the adhered member on which the guide layer is formed, thereby melting Excessive solder flowing out from the solder layer spreads to the side surface of the adhered member along the guide layer, so that it is possible to prevent swelling due to excess solder from occurring on the emission surface of the semiconductor light emitting element without requiring a complicated process. Can
Furthermore, when the solder layer is melted, deterioration of the solder layer,
For example, when Sn is contained in the solder layer, Sn can be prevented from being oxidized, so that the adhesion failure of the semiconductor light emitting element can be prevented.

According to the second aspect of the present invention, in the method for fixing the semiconductor light emitting element according to the first aspect, in the second layer forming step, metal is vapor-deposited obliquely from above the upper surface of the adhered member. By doing so, the protective layer and the guide layer are formed, so that the protective layer and the guide layer can be easily formed without performing a complicated process such as a mask process.

According to the third aspect of the present invention, in the method for fixing the semiconductor light emitting element according to the second aspect, the adhered member extends from the lower end to the upper end on the side surface where the metal is vapor-deposited so that the metal is not vapor-deposited. Since the plurality of the guide layers are arranged so as to form a portion so as to be spaced apart from each other, the guide layer is formed so as not to reach the lower end of the adhered member. The light emitting element can be electrically insulated.

According to the invention of claim 4, claim 1,
In the method for fixing a semiconductor light emitting element according to 2 or 3, since the protective layer is formed of a metal selected from a plurality of metals forming the solder layer, when the solder layer is melted, Even if the protective layer melts and fuses with the solder layer, the composition of the solder layer does not change. Therefore, even if the solder layer is melted, the composition of the solder layer can be maintained.

According to the invention of claim 5, claim 1,
In the method of fixing a semiconductor light emitting device according to 2, 3, or 4, the solder layer is formed of an Au—Sn alloy,
Since the guide layer is made of Au, the wettability of Au is good for Au-Sn alloy, and the solder flowing out from the molten solder layer easily spreads along the guide layer, so that the excess solder It is possible to reliably prevent the occurrence of swelling due to.

According to the method of fixing a semiconductor light emitting element of the invention described in claim 6, the semiconductor light emitting element having an emission surface for emitting light is fixed on the upper surface to be the fixed surface of the fixed member to which the semiconductor light emitting element is fixed. A layer forming step of forming a solder layer for fixing the semiconductor light emitting element, and a solder flowing out from the solder layer when the solder layer is melted by partially exposing the adhered member from a side surface thereof. A guide portion forming step of forming a guide portion that guides the side surface of the adhered member, and the guide of the adhered member on the upper surface of the adhered member via the solder layer after the layer forming step and the guide portion forming step. A mounting step of mounting the semiconductor light emitting element by locating the emission surface on the side surface where the portion is exposed, a melting step of melting the solder layer after the layer forming step and the guide portion forming step, and Process And a solidifying step of solidifying the solder layer melted in the melting step after the melting step, forming a guide part partially exposed from the side surface of the fixed member, By fixing the semiconductor light emitting element by positioning the emitting surface on the side surface side where the guide portion of the adhered member is formed on the upper surface, excess solder flowing out from the melted solder layer is guided along the guide portion to the side surface of the adhered member. Therefore, it is possible to prevent swelling due to excess solder from occurring on the emission surface of the semiconductor light emitting element without requiring a complicated process.

According to a seventh aspect of the present invention, in the method for fixing a semiconductor light emitting element according to the sixth aspect, the guide portion forms the adhered member on the adhered member substrate for forming the adhered member. By forming a metal part extending inward from a surface serving as an upper surface, and cutting out the adhered member from the adhered member substrate so that a part of the metal part is exposed from a cut surface serving as a side surface of the adhered member. Since the metal portion is partly exposed from the side surface of the adhered member, the guide portion is formed by forming the metal portion partially exposed from the side surface of the adhered member when the adhered member is formed. Since it is easily formed on the member to be fixed, the guide portion can be easily formed on the member to be fixed without requiring a complicated device.

According to the eighth aspect of the present invention, in the method for fixing the semiconductor light emitting element according to the sixth or seventh aspect, since the guide portion is made of Pt, the wettability of Pt with respect to solder is high. Since it is good, the solder flowing out from the melted solder layer easily spreads along the guide portion, so that it is possible to reliably prevent the occurrence of swelling due to excess solder.

[Brief description of drawings]

1A is a vertical side view showing a peripheral portion of a semiconductor laser device attached to a semiconductor laser device according to a first embodiment of the present invention, and FIG. 1B is a submount to which the semiconductor laser device is fixed. FIG.

FIG. 2 is a vertical cross-sectional side view schematically showing a layer forming step of forming various layers on a submount.

3A is a vertical sectional side view showing a peripheral portion of a semiconductor laser device attached to a semiconductor laser device according to a second embodiment of the present invention, and FIG. 3B is a submount to which the semiconductor laser device is fixed. FIG.

FIG. 4 is a vertical cross-sectional side view schematically showing a guide portion forming step of forming a guide portion on the submount and a layer forming step of forming various layers on the submount.

FIG. 5 is a vertical cross-sectional side view showing a peripheral portion of a semiconductor laser device attached to a conventional semiconductor laser device.

[Explanation of symbols]

1a exit surface 2a side 6 Solder layer 7 information layers 9 Protective layer 20a side 21 Information Department 24 metal parts

Claims (8)

[Claims] 1. A solder layer for fixing the semiconductor light emitting element is formed on an upper surface of the member to be fixed to which a semiconductor light emitting element having an emission surface for emitting light is fixed. A layer forming step, a protective layer covering the surface of the solder layer, and solder that flows out from the solder layer when the solder layer is melted and is located on the side surface of the adhered member and extends from the protective layer. A second integrally forming a guide layer leading to the side surface of the adhered member
And a side surface side of the adhered member on which the guide layer is formed via the solder layer and the protective layer on the upper surface of the adhered member after the second layer forming step. A placing step of positioning and placing the semiconductor light emitting element, a melting step of melting the solder layer and the protective layer after the second layer forming step, and a melting step after the placing step and the melting step. A solidification step of solidifying the solder layer fused with the protective layer in the step of fixing the semiconductor light emitting element. 2. The protective layer and the guide layer are formed in the second layer forming step by vapor-depositing a metal obliquely above the upper surface of the adhered member. Method for fixing semiconductor light emitting device of. 3. A plurality of the adhered members are arranged at intervals so as to form a portion on the side surface on which the metal is vapor-deposited, which extends from the lower end toward the upper end and where the metal is not vapor-deposited. Method for fixing semiconductor light emitting device of. 4. The method for fixing a semiconductor light emitting device according to claim 1, wherein the protective layer is formed of a metal selected from a plurality of metals forming the solder layer. 5. The method for fixing a semiconductor light emitting device according to claim 1, wherein the solder layer is made of an Au—Sn alloy, and the guide layer is made of Au. 6. A layer formation for forming a solder layer for fixing the semiconductor light emitting element on an upper surface which is a fixed surface of a fixed member to which a semiconductor light emitting element having an emission surface for emitting light is fixed. A step of forming a guide portion for guiding the solder flowing out from the solder layer to the side surface of the adhered member when the solder layer is partially exposed from the side surface of the adhered member and the solder layer is melted. After the step of forming the layer and the step of forming the guide portion, the semiconductor is provided by arranging the emission surface on a side surface of the adhered member where the guide portion is exposed on the upper surface of the adhered member via the solder layer. A placing step of placing a light emitting element, a melting step of melting the solder layer after the layer forming step and the guide part forming step, and a melting step of the melting step after the placing step and the melting step. Method of fixing the semiconductor light emitting device having a solidifying step of solidifying the Sunda layer. 7. The guide part forms a metal part extending inward from a surface serving as an upper surface of the adhered member on a adhered member substrate for forming the adhered member, and a part of the metal part is formed. 7. The metal portion, which is partially exposed from a side surface of the adhered member by cutting the adhered member from the adhered member substrate so as to be exposed from a cut surface which is a side surface of the adhered member. Method for fixing semiconductor light emitting device of. 8. The method for fixing a semiconductor light emitting device according to claim 6, wherein the guide portion is formed of Pt.