JP2003315974A - 露光マスクの作製方法および露光方法 - Google Patents

露光マスクの作製方法および露光方法

Info

Publication number
JP2003315974A
JP2003315974A JP2002117102A JP2002117102A JP2003315974A JP 2003315974 A JP2003315974 A JP 2003315974A JP 2002117102 A JP2002117102 A JP 2002117102A JP 2002117102 A JP2002117102 A JP 2002117102A JP 2003315974 A JP2003315974 A JP 2003315974A
Authority
JP
Japan
Prior art keywords
pattern
exposure
mask
phase
line width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002117102A
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English (en)
Japanese (ja)
Other versions
JP2003315974A5 (https=
Inventor
Koji Kikuchi
晃司 菊地
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2002117102A priority Critical patent/JP2003315974A/ja
Publication of JP2003315974A publication Critical patent/JP2003315974A/ja
Publication of JP2003315974A5 publication Critical patent/JP2003315974A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2002117102A 2002-04-19 2002-04-19 露光マスクの作製方法および露光方法 Pending JP2003315974A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002117102A JP2003315974A (ja) 2002-04-19 2002-04-19 露光マスクの作製方法および露光方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002117102A JP2003315974A (ja) 2002-04-19 2002-04-19 露光マスクの作製方法および露光方法

Publications (2)

Publication Number Publication Date
JP2003315974A true JP2003315974A (ja) 2003-11-06
JP2003315974A5 JP2003315974A5 (https=) 2005-09-08

Family

ID=29534408

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002117102A Pending JP2003315974A (ja) 2002-04-19 2002-04-19 露光マスクの作製方法および露光方法

Country Status (1)

Country Link
JP (1) JP2003315974A (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7396617B2 (en) 2004-06-14 2008-07-08 Photronics, Inc. Photomask reticle having multiple versions of the same mask pattern with different biases
US7435533B2 (en) 2004-06-14 2008-10-14 Photronics, Inc. Method of forming a semiconductor layer using a photomask reticle having multiple versions of the same mask pattern with different biases
US9005848B2 (en) 2008-06-17 2015-04-14 Photronics, Inc. Photomask having a reduced field size and method of using the same
US9005849B2 (en) 2009-06-17 2015-04-14 Photronics, Inc. Photomask having a reduced field size and method of using the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7396617B2 (en) 2004-06-14 2008-07-08 Photronics, Inc. Photomask reticle having multiple versions of the same mask pattern with different biases
US7435533B2 (en) 2004-06-14 2008-10-14 Photronics, Inc. Method of forming a semiconductor layer using a photomask reticle having multiple versions of the same mask pattern with different biases
US9005848B2 (en) 2008-06-17 2015-04-14 Photronics, Inc. Photomask having a reduced field size and method of using the same
US9005849B2 (en) 2009-06-17 2015-04-14 Photronics, Inc. Photomask having a reduced field size and method of using the same

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