JP2003309055A - Exposure method, aligner, and device production method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To offer an exposure technology which prevents vibration transfer between a stage holding a mask and a projection optical system, and can control the positional relations between the mask and projection optical system. <P>SOLUTION: A micromotion stage 31 which holds a reticle R and moves, and a projection optical system PL are independently supported with different active vibration isolation stands. A reticle X-Z axis interferometer 35 measures the amount of change in the space between the top face of a moving mirror 64 secured on the micromotion stage 31 and the top face of a reference mirror 65X secured on the side of the projection optical system PL at three points, and determines the amount of change from these measurement results in the space between the micromotion stage 31 (reticle R) and the projection optical system PL as well as the rotation inclination angle of two axes of the micromotion stage 31. Based on these results, the height and inclination angle of the micromotion stage 31 are controlled. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

The present invention is used for transferring a mask pattern onto a substrate in a lithography process for manufacturing a device such as a semiconductor device, a liquid crystal display device, a plasma display device or a thin film magnetic head. An exposure method and apparatus.

[0002]

2. Description of the Related Art A batch exposure type (stepper type) or a scanning exposure type (step-and-scan type) reduction projection type exposure apparatus used for manufacturing semiconductor elements and the like has high exposure accuracy. High throughput is required. Therefore, in the exposure apparatus, the reticle stage system that holds a reticle as a mask for positioning or scanning and the wafer stage system that holds a wafer as a substrate and moves two-dimensionally have high-precision positioning and high-speed movement, respectively. The mechanism is adopted so that For example, in a scanning exposure type exposure apparatus, in order to reduce the influence of vibration associated with the movement of the movable part of the stage system, the fixed part is moved in the opposite direction so as to cancel the reaction force when the movable part moves. There have been developed a counter balance type drive mechanism and a drive mechanism of a type in which a reaction force generated when a movable part of the counter part moves is released to a floor on which an exposure apparatus is installed.

Even if a counter balance type drive mechanism or a drive mechanism of releasing the reaction force to the floor is used, the reaction force may slightly remain. Further, for example, there is a possibility that the exposure apparatus main body may be affected by vibrations from other manufacturing apparatuses installed on the same floor in a semiconductor manufacturing factory or an air conditioner installed in a machine room downstairs. Therefore, the conventional exposure apparatus is installed on the floor surface as a whole via a vibration isolation table so that the vibration generated from the outside is attenuated and the vibration generated in the stage system is not transmitted to the outside.

[0004]

When the exposure apparatus as a whole is installed on the floor through the vibration isolation table as described above, it is possible to prevent the transmission of vibration between the exposure apparatus and other apparatuses. it can. However, particularly in the scanning exposure type exposure apparatus, if the residual vibrations are transmitted to each other between the reticle stage system and the wafer stage system that are driven in synchronization with each other, the synchronization error of the stage system falls within the allowable range. There is a risk of exceeding. Further, if the vibration remaining in the reticle stage system or the wafer stage system is transmitted to the projection optical system, the resolution of the projected image and the overlay accuracy may decrease.

Particularly, in a reduction projection type exposure apparatus,
Since the reticle stage system has a faster scanning speed during scanning exposure and a longer moving distance than the wafer stage system, it is desirable to prevent residual vibration from the reticle stage system from being transmitted to the projection optical system as much as possible. Further, in the future, use of an F ₂ laser (wavelength 157 nm) having a shorter wavelength than the ArF excimer laser as an exposure light is being considered, but when such a vacuum ultraviolet light (VUV light) is used, an exposure light is used. It is necessary to supply a purge gas such as helium gas from which impurities such as organic gases are highly removed to the optical path of light. As a result, the number of pipes and cables connected to the airtight chamber that surrounds the reticle stage system increases, and vibrations from the control system are easily transmitted to the projection optical system via the reticle stage system. Therefore, it is desired to develop a mechanism in which vibration is difficult to be transmitted between the reticle stage system and the projection optical system.

Further, when a movable part which holds and moves a reticle of a reticle stage system is supported on a base member via, for example, an air bearing, the reticle stage system has a high scanning speed and a long moving distance. Height of the movable part (thickness of gas layer) during scanning exposure due to load etc.
May change slightly. When the height of the movable portion changes in this way, the distance between the reticle and the projection optical system changes, defocusing occurs in the projected image, and the resolution decreases. In this regard, even when developing a mechanism in which vibration is less likely to be transmitted between the reticle stage system and the projection optical system, it is desirable to provide a mechanism that prevents deterioration of the projected image due to a change in the distance between the reticle and the projection optical system.

In view of the above point, the first object of the present invention is to provide an exposure technique in which vibration is less likely to be transmitted between the stage system holding the mask and the projection optical system. The present invention also provides an exposure technique capable of controlling the positional relationship between the image plane of the projection optical system and the substrate to be exposed in a predetermined state.
The purpose of. Furthermore, when the present invention is applied to a scanning exposure type exposure apparatus, the positional relationship between the image plane of the projection optical system and the substrate to be exposed is changed even when the position of the movable portion that holds and moves the mask changes. A third object is to provide an exposure technique capable of controlling the exposure to a predetermined state.

Furthermore, when the present invention is applied to a scanning exposure type exposure apparatus, even if the position of the movable portion that holds and moves the mask changes, the pattern image projected on the substrate by the projection optical system. A fourth object of the present invention is to provide an exposure technique capable of maintaining an excellent image formation state of the image.

[0009]

According to a first exposure method of the present invention, an exposure beam illuminates a first object (R), and a second object (W1) passes through the first object and a projection system (PL). , W
In the exposure method of exposing 2), the stage (31) holding the first object is supported independently of the projection system,
The positional relationship between the stage and the projection system is measured, and at least one of the interval and the inclination angle between the stage and the projection system is controlled during the exposure of the second object based on the measurement information. .

According to the present invention, the stage holding the first object and the projection system thereof are supported independently of each other. That is, for example, since the stage and the projection system thereof are supported by a predetermined support mechanism via different vibration isolation devices, when the first object is a mask, the stage is driven when the mask is driven. The vibration generated at is difficult to be transmitted to the projection system. By supporting the stage and the projection system independently of each other in this manner, the positional relationship between the stage (first object) and the projection system is likely to change. Therefore, in the present invention, the positional relationship between the stage and the projection system is measured, and based on the measurement result, the positional relationship between the stage and the projection system is maintained in a predetermined state as an example. As a result, the exposure surface of the second object can be focused on the image plane of the projection system, so that the imaging characteristics (resolution or the like) of the projection image transferred onto the second object can always be kept high.

In the present invention, when measuring the positional relationship between the stage and the projection system, the position of the stage in the direction of the optical axis of the projection system with respect to the projection system and the plane in the plane perpendicular to the optical axis. It is desirable to measure the tilt angle around two orthogonal axes (relative displacement with three degrees of freedom). The degree of freedom of the positional relationship between the stage and the projection system is 6, and the stage is, for example, positioned in a plane perpendicular to the optical axis of the projection system during exposure or moved two-dimensionally for scanning. And rotation (relative displacement of 3 degrees of freedom), the remaining 3
By measuring the relative displacement of the degrees of freedom, it is possible to obtain complete information for correcting the positional relationship between the stage and the projection system.

In this case, it is desirable to control the distance between the stage and the projection system and the inclination angle to be maintained in a predetermined state based on the measurement information. This makes it possible to maintain the imaging characteristics of the projected image in the optimum state. A second exposure method according to the present invention is the first exposure method, wherein the first object and the second object are synchronized with the projection system when the second object is exposed. While scanning, when controlling at least one of the interval and the inclination angle between the stage and the projection system, it is possible to suppress the change in the positional relationship due to the offset load due to the movement of the stage.

This is one in which the present invention is applied when performing exposure by a scanning exposure method. According to the present invention, since the stage and the projection system thereof are supported independently of each other, the stage moves during scanning exposure, and the change of the position of the center of gravity with respect to the support mechanism (anti-vibration device etc.) of the stage,
That is, when an unbalanced load is generated, the positional relationship between the stage (first object) and the projection system may change. Therefore,
Based on the measurement information on the positional relationship between the stage and the projection system, for example, by returning the positional relationship to a predetermined state, it is possible to always perform scanning exposure with good imaging characteristics.

Next, the first exposure apparatus according to the present invention illuminates the first object (R) with the exposure beam, and the second object (W1, W2) through the first object and the projection system (PL). In an exposure apparatus that exposes a first stage, a stage (31) for holding the first object, an active vibration isolation mechanism (8) for supporting the stage independently of the projection system, and the stage and the projection system. Measuring device (64,65
X, 35, 66) and at least one of the interval and the inclination angle between the stage and the projection system via the anti-vibration mechanism during the exposure of the second object based on the measurement information of the measuring device. And a control system (85) for

According to the present invention, the anti-vibration mechanism is controlled based on the measurement information of the measuring device so that, for example, the positional relationship between the stage and the projection system is maintained in a predetermined state. Then, the exposure method of the present invention can be used.
Therefore, vibration is unlikely to be transmitted between the stage and the projection system, and good imaging characteristics can always be obtained. Also,
A second exposure apparatus of the present invention, in the first exposure apparatus, links a coarse movement stage (33) driven in a predetermined direction with respect to the projection system and the stage to the coarse movement stage. At the same time, a fine movement mechanism (58X, 58) for adjusting the relative position of the coarse movement stage to the stage.
YA, 58YB) and a balance member (32) for canceling the reaction force when driving the coarse movement stage,
When exposing the second object, the first object and the second object are exposed.
The object and the projection system are synchronously scanned.

This is an application of the present invention to a scanning exposure type exposure apparatus. According to the present invention, the coarse movement stage allows the stage to be scanned at a constant speed, for example, substantially non-contact. Further, the balance member suppresses vibration when driving the coarse movement stage. In this case, it is desirable that the coarse movement stage is supported independently of the stage and the projection system. This makes it difficult for the vibrations remaining when the coarse movement stage is driven to be transmitted to the stage (first object) and the projection system, so that higher imaging characteristics can be obtained.

Further, the control system, when controlling at least one of the interval and the inclination angle between the stage and the projection system via the vibration isolation mechanism, the positional relationship due to the eccentric load accompanying the movement of the stage. It is desirable to suppress the fluctuation of As a result, even if the stage moves during scanning exposure, the imaging characteristics are kept high. In addition, the measuring device includes, as an example, a movable mirror (64) indicating the position of the first object held on the stage (31) in a direction (non-scanning direction) perpendicular to the scanning direction, and a projection system thereof. A reference mirror (65X) provided, and an interferometer for distance measurement that measures the distance between the movable mirror and the reference mirror in the optical axis direction (Z direction) of the projection system (one or more measurement axes). 35, 66).

In this case, since the movable mirror (64) can be used both as an interferometer for measuring the position in the non-scanning direction and an interferometer for measuring the interval, a separate measuring mechanism is provided on the stage (31). The interval can be measured without providing. Also, the interferometer for measuring the interval of the measuring device,
It is desirable to have at least 3 measuring axes. With this, based on the measurement information of the interferometer, the position of the stage in the optical axis direction of the projection system with respect to the projection system and the plane perpendicular to the optical axis can be achieved without increasing the size of the interferometer. It is possible to obtain an inclination angle (relative displacement of three degrees of freedom) about two orthogonal axes.

Further, it is preferable that a part (67, 66) of the optical system of the interferometer for measuring the distance is supported by a supporting member (11, 12, 13) which supports the projection system. This can simplify the configuration of the stage system side for the first object. Next, the third exposure apparatus according to the present invention illuminates the first object (R) with the exposure beam, and transmits the second object (W1, W1) through the first object and the projection system (PL).
In the exposure apparatus for exposing 2), the first stage (31) holding the first object, the second stage (43A, 43B) holding the second object, and the first stage for the exposure beam And a driving device (82, 83) for synchronously driving the first and second stages in order to relatively move the second object and the second object by scanning and exposing the second object, and the scanning exposure. Sometimes a first and a second reference surface (64) extending along a predetermined direction in which the first object is moved is formed on the first stage, and the first reference surface is used to relate to a direction orthogonal to the predetermined direction. Measuring device (35, 66) for measuring the positional information of the first stage and measuring the positional relationship between the first stage and the projection system in the optical axis direction of the projection system using the second reference plane. And its Adjusting device for adjusting the positional relationship between the image plane of the projection system during its scanning exposure on the basis of the measurement information of measurement apparatus and its second object (8A~8C; 43A, 4
3B).

According to the present invention, based on the measurement information of the measuring device, for example, the second value is displayed on the image plane of the projection system.
By controlling the adjusting device so that the exposure surface of the object is focused, even if the positional relationship between the first stage and the projection system is changed, the second stage is displayed on the image plane of the projection system. The exposed surface of the object can be focused. Therefore, good imaging characteristics can always be obtained on the second object.

In this case, the measuring device has, as an example, an interferometer system for irradiating the first and second reference surfaces with measuring beams, respectively, and the interferometer system includes the first stage and the projection system thereof. The positional relationship with and is measured on each of a plurality of measurement axes. The interferometer system allows the first stage to be constructed without complicating the structure of the first stage.
The positional relationship between the stage and its projection system can be measured with high accuracy.

Further, the interferometer system has at least 3
Two measurement axes are provided, and the relative position of the first stage and the projection system in the optical axis direction is orthogonal to the plane perpendicular to the optical axis of the projection system based on the measurement information of the interferometer system. It is desirable to obtain the tilt angle around the axis. This makes it possible to measure all the positional relationships required to maintain good image formation characteristics.

Further, in the interferometer system, it is preferable that at least an optical system through which the measurement beam with which the second reference surface is irradiated passes is provided on a support member (13) that supports the projection system. Thereby, the positional relationship between the projection system and the first stage can be measured with high accuracy. Also,
As an example, the first stage includes a coarse movement stage (33) driven in the predetermined direction and a fine movement stage (31) on which the first object is placed and which moves relatively to the coarse movement stage. The coarse movement stage and the fine movement stage are supported independently of each other. With this configuration,
The vibration of the coarse movement stage is less likely to be transmitted to the fine movement stage, and even if the coarse movement stage is driven at high speed during scanning exposure, the influence of the vibration is suppressed.

It is desirable that the coarse movement stage is supported independently of the projection system so that the propagation of vibrations to the projection system is blocked. As a result, even if the coarse movement stage is driven at high speed, the influence of vibration on the projection system is suppressed. In addition, the adjustment device includes an active vibration isolation mechanism (8A to 8C) that supports the fine movement stage,
It is desirable to control the positional relationship between the fine movement stage and the projection system via the vibration isolation mechanism during the scanning exposure based on the measurement information. Thereby, even when the positional relationship between the fine movement stage and the projection system changes relatively greatly, the exposure surface of the second object can be focused on the image plane of the projection system with high accuracy.

Further, the adjusting device may be a focusing mechanism incorporated in the second stage (43A, 43B) for focusing and leveling the second object. Thereby, the adjusting device can be simplified. Next, the device manufacturing method of the present invention includes a step of transferring the device pattern (R) onto the workpieces (W1, W2) using the exposure apparatus according to any one of the above-mentioned present invention. According to the present invention, the projection system is stably maintained and the imaging characteristics are kept high, so that a highly functional device excellent in overlay accuracy and pattern fidelity (line width accuracy etc.) can be manufactured.

[0026]

BEST MODE FOR CARRYING OUT THE INVENTION An example of an embodiment of the present invention will be described below with reference to the drawings. In this example, the present invention is applied when exposure is performed by a scanning exposure type projection exposure apparatus that is a step-and-scan type. Figure 1
1 shows the projection exposure apparatus of this example. In FIG. 1, the projection exposure apparatus of this example is installed in a clean room on the floor 1 of a semiconductor device manufacturing factory as an example. First,
As the exposure light source 17 of the projection exposure apparatus, an ArF excimer laser light source that generates pulsed light having a wavelength of 193 nm that is substantially vacuum ultraviolet light (VUV light) is used in this example. The present invention is also suitable when an F ₂ laser (wavelength 157 nm) having a shorter wavelength even in the vacuum ultraviolet region is used as the exposure beam. Furthermore, as an exposure beam,
Vacuum ultraviolet light of shorter wavelength such as Kr ₂ laser (wavelength 146 nm) or Ar ₂ laser (wavelength 126 nm), or Y
Light from a harmonic generator of an AG laser or a semiconductor laser or a harmonic generator of a semiconductor laser can also be used.

Exposure light IL as an exposure beam emitted from the exposure light source 17 at the time of exposure is incident on the first illumination system IL1 in the first sub-chamber 19 via the beam matching unit (BMU) 18. The first illumination system IL1 is an optical unit including a beam shaping optical system, a zoom optical system, and the like.
It is composed of an optical integrator (uniformizer or homogenizer) for uniforming the illuminance distribution, a light amount monitor, a variable aperture stop, a relay lens system and the like.
The exit surface of the first illumination system IL1 is substantially conjugate with the pattern surface (reticle surface) of the reticle that serves as a mask to be illuminated (first object), and the movable field stop 20 is provided on this exit surface.
Are arranged.

The above-mentioned optical unit is the first illumination system I.
At least one prism (such as a conical prism or a polyhedron prism) that is arranged on the light source side of the optical integrator in L1 and is movable along the optical axis of the first illumination system IL1 in addition to the zoom optical system, and The number of diffractive optical elements is removably arranged in the first illumination system IL1. In this case, when the optical integrator is a fly-eye lens, the optical unit makes the intensity distribution of the exposure light IL on the incident surface variable, and the optical integrator is an internal reflection type integrator (such as a rod integrator).
When, the incident angle range of the exposure light IL with respect to the incident surface is variable. Thereby, the illumination condition of the reticle R, that is, the light amount distribution (size and shape of the secondary light source) of the exposure light IL on the pupil planes of the first and second illumination systems IL1 and IL2 can be arbitrarily changed, and the illumination condition can be changed. It is possible to suppress the light amount loss due to the change.

The movable field stop 20 prevents exposure of patterns other than the original circuit pattern at the start and end of scanning exposure of each shot area of a wafer serving as a substrate to be exposed (second object). It plays the role of opening and closing the field of view. Further, the movable field stop 20 is also configured to be able to change the width of the field of view in the non-scanning direction according to the size of the circuit pattern to be transferred in the non-scanning direction prior to scanning exposure. Since the first illumination system IL1 in which the movable field stop 20 that may generate vibrations when opening and closing the field of view is arranged is supported separately from the exposure main body, the exposure accuracy in the exposure main body is increased. (Superposition accuracy, transfer fidelity, etc.) are improved.

The exposure light IL which has passed through the movable field stop 20.
Enters the second illumination system IL2 in the second sub-chamber 15 attached to a predetermined column (details will be described later). Second
The illumination system IL2 includes a relay lens system, a mirror for bending the optical path, a condenser lens system, and a fixed field stop 21. Only the fixed field stop 21 is included in the second sub-chamber 1
It is installed outside 5. The exposure light IL that has passed through the second illumination system IL2 illuminates the illumination area of the pattern surface (reticle surface) of the reticle R as a mask. The fixed field stop 21 of this example is fixed to a reticle alignment unit 23 in which a reticle alignment microscope (not shown) for performing alignment of the reticle R is arranged. That is, the fixed field stop 21 has an upper surface close to the reticle R,
That is, it is arranged on a surface defocused by a predetermined amount from the reticle surface. The fixed field diaphragm 21 has an opening for defining an illumination area on the reticle surface as an elongated slit-shaped area in the non-scanning direction orthogonal to the scanning direction.
The fixed field diaphragm 21 may be arranged near the conjugate surface with the reticle surface, for example, near the installation surface of the movable field diaphragm 20.

Under the exposure light IL, the image of the pattern in the illumination area of the reticle R is projected by the projection optical system PL as a projection system.
Projection magnification β via (β is 1/4 times or 1/5 times, etc.)
Then, it is projected onto a slit-shaped exposure region on the wafer W1 (or W2) coated with a photoresist as a photosensitive substrate (exposed substrate). In this state, the pattern image of the reticle R is transferred to one shot area on the wafer W1 by synchronously moving the reticle R and the wafer W1 in the predetermined scanning direction with the projection magnification β as the speed ratio. The reticle R and the wafers W1 and W2 are the first object and the second object of the present invention, respectively.
Corresponding to an object, the wafers W1 and W2 are disk-shaped substrates such as semiconductors (silicon or the like) or SOI (silicon on insulator).

As the projection optical system PL, for example, as disclosed in WO 00/39623, a plurality of refracting lenses are provided along one optical axis, and openings are provided in the vicinity of the respective optical axes. A straight-tube type catadioptric system configured by arranging two concave mirrors, a straight-tube type refraction system configured by arranging a refractive lens along one optical axis, and the like can be used. Furthermore, as the projection optical system PL, a catadioptric system having an optical axis bent in a V shape, a twin-barrel catadioptric system, or the like may be used. Hereinafter, the Z axis is taken parallel to the optical axis AX of the projection optical system PL, and the reticle R and the wafers W1 and W2 at the time of scanning exposure are scanned in a plane perpendicular to the Z axis (which substantially coincides with the horizontal plane in this example). The X axis is taken along the non-scanning direction (that is, the direction perpendicular to the paper surface of FIG. 1) orthogonal to the scanning direction, and the Y axis is taken along the scanning direction (that is, the direction parallel to the paper surface of FIG. 1). Explain.

First, the reticle stage system that supports the reticle R of this example, the projection optical system PL, and the wafers W1 and W2.
The overall structure of the exposure main body including the wafer stage system that supports the substrate will be described. That is, a substantially rectangular flat plate-shaped frame caster 2 is installed on the floor 1, and cylindrical main body support parts 3 are installed at three locations corresponding to the vertices of a substantially equilateral triangle on the periphery of the frame caster 2. A ring-shaped main body base 5 is placed on the upper surface of the main body support portion 3 of the book via an active vibration isolation base 4, and a flat reticle stage support base 7 is mounted on the main body base 5 via three columns 6. Is installed. A displacement sensor (not shown) such as an electric level or an optical tilt angle detector is installed on the main body base 5. Each of the three active anti-vibration bases 4 includes a mechanical damper such as an air damper or a hydraulic damper, which bears a large weight, and an electromagnetic damper including an electromagnetic actuator such as a voice coil motor. The electromagnetic dampers in the three active anti-vibration bases 4 are driven so that the inclination angle of the main body base 5 with respect to the horizontal plane detected by the displacement sensor falls within the allowable range. The air pressure, hydraulic pressure, etc. of the damper are controlled. In this case, the mechanical damper damps high-frequency vibrations from the floor before they are transmitted to the exposure body, and the remaining low-frequency vibrations are damped by the electromagnetic dampers.

A fine movement stage support as a flat plate-shaped support member is provided on the upper surface of the reticle stage support 7 via three active vibration-isolating bases 8 located substantially at the vertices of an isosceles triangle elongated in the scanning direction of the reticle. 9 is placed, and openings are formed in the central portions of the reticle stage support base 7 and the fine movement stage support base 9 for passing the exposure light IL, respectively. The active anti-vibration table 8 has the same structure as the active anti-vibration table 4 (however, the load resistance is set lower than that of the active anti-vibration table 4). Is controlled so that the distance between the reticle R and the projection optical system PL and the inclination angle thereof maintain a predetermined state, as will be described later. The upper surface of the fine movement stage support base 9 is processed into a guide surface having extremely good flatness, and the stage (movable stage) of the present invention is formed on this guide surface.
The fine movement stage 31 is mounted smoothly and two-dimensionally via an air bearing, and the reticle R is held on the fine movement stage 31 by vacuum suction or the like. An opening for passing the exposure light IL is also formed in the center of the fine movement stage 31.

Further, the reticle alignment section 23 is fixed to the end of the reticle stage support 7, and the reticle alignment microscope (not shown) and the fixed field stop 21 are attached to the reticle alignment section 23 as described above. Further, a reticle Y-axis guide member 32 is arranged on the reticle stage support base 7 in parallel with the fine movement stage support base 9 along the Y-axis, and a counter-balance method is applied to the reticle Y-axis guide member 32 in the Y direction by a linear motor. The coarse movement stage 33 is arranged so as to be driven by
The coarse movement stage 33 and the fine movement stage 31 are connected via three non-contact type actuators (details will be described later). The fine movement stage 31 is driven at a constant speed in the ± Y directions in conjunction with the coarse movement stage 33, and its actuator slightly moves in the X direction, the Y direction, and the rotation direction with respect to the coarse movement stage 33 as necessary. Quantity driven.
The two-dimensional position and rotation angle of the fine movement stage 31 are measured by the reticle Y-axis interferometer 34 and the reticle X-Z axis interferometer (see FIG. 3) with the projection optical system PL as a reference, and based on this measurement information. Thus, the positions and speeds of the coarse movement stage 33 and the fine movement stage 31 are controlled.

In this example, the reticle stage system RST is composed of the fine movement stage support 9, the fine movement stage 31, the reticle Y-axis guide member 32, the coarse movement stage 33, and their drive mechanism. This reticle stage system R
The ST is covered with a reticle chamber (not shown) as an airtight chamber. Although the reticle stage system RST of this example is a single holder system, the reticle stage system RS
T may be a double holder system in which one movable stage (fine movement stage 31) holds two reticles.
A double reticle stage method in which a single reticle is placed on movable stages independent of each other may be used.

An interface column 16 is installed on the floor 1 so as to be adjacent to the frame casters 2, and a reticle loader system RL and a wafer loader system WL are installed in the upper and lower parts of the interface column 16, respectively. A reticle rotation transfer unit 22 that temporarily holds the reticle while adjusting the rotation angle is also installed on the reticle stage support base 7. The reticle to be transferred is the reticle loader system RL via the reticle rotation transfer unit 22. And the fine movement stage 31.

Next, on the upper surface of the main body base 5, three active vibration-isolating bases 10 are installed inside the three columns 6 at the positions of the vertices of substantially equilateral triangles. A cylindrical projection system holding unit 11 is placed on 10 via a flange portion, and a projection optical system PL is held in the center of the projection system holding unit 11. The active anti-vibration table 10 has the same configuration as the active anti-vibration table 4 (however, the load resistance is set lower than that of the active anti-vibration table 4), and the upper surface of the projection system holding unit 11 is electrically charged. A displacement sensor (not shown) such as a digital level or an optical tilt angle detector is installed. As an example, the angle of inclination of the upper surface of the projection system holding unit 11 with respect to the horizontal plane (the angle of inclination around two axes, that is, around the X axis and the Y axis) detected by the displacement sensor is set within the allowable range. The operation of each active vibration isolation table 10 is controlled.

A flat plate-shaped illumination system support 13 is installed on the projection system holder 11 via four columns 12, and the front end of the projection optical system PL is placed in the central opening of the illumination system support 13. It has been inserted. A second sub-chamber 15 (in which the second illumination system IL2 is housed) is supported on an end of the illumination system support 13 near the first sub-chamber 19 via a cylindrical illumination system support column 14. . In this case, the tip ends of the illumination system support 13 and the projection optical system PL are housed in the recess 7b provided on the bottom surface of the reticle stage support 7,
The illumination system support column 14 is inserted through an opening 7c provided in the reticle stage support base 7. Further, the reticle Y-axis interferometer 34 is installed at a position substantially symmetrical to the illumination system support column 14 with respect to the optical axis AX of the projection optical system PL on the illumination system support table 13. The reticle Y-axis interferometer 34 is a reticle stage support table. 7 reaches the side surface of the fine movement stage 31 through an opening 7d provided in the reticle Y-axis interferometer 34.
With reference to a reference mirror (not shown) on the side of the projection optical system PL in the Y direction, the position of the fine movement stage 31 (reticle R) in the Y direction (scanning direction), the rotation angle around the Z axis (yaw amount), And rotation angle around the X-axis (pitching amount)
Is measured.

Although not shown in FIG. 1, the position of the fine movement stage 31 in the X direction, Y, is set on the illumination system support base 13.
Rotation angle around the axis (rolling amount), distance between projection optical system PL and fine movement stage 31 in Z direction, and projection optical system P
Reticle X for measuring the tilt angle of the fine movement stage 31 about the X axis and the Y axis with respect to a plane perpendicular to the optical axis AX of L.
A Z-axis interferometer (described in detail later) is also provided.

As described above, in this example, the projection optical system PL and the second illumination system IL2 are supported on the common active vibration isolation table 10. Therefore, the relative relationship between the exposure light that illuminates the reticle and the projection optical system PL is always maintained in a constant state, so that the imaging characteristics of the projection optical system PL are stably maintained. Next, in this example, the projection optical system PL is sandwiched on the bottom surface of the projection system holding unit 11 in the Y direction by an off-axis method F.
A pair of alignment sensors 46A and 46B of an image forming method including an IA (Field Image Alignment) method are fixed. Further, on the bottom surface of the projection system holding unit 11, a projection optical system 47 for measuring the defocus amount and the tilt angle of the surface of the wafer to be exposed with respect to the image plane of the projection optical system PL.
An oblique-incidence type autofocus sensor including A and the light receiving optical system 47B is also installed.

Next, the wafer stage system WST of this example will be described in detail. First, a platen (base member) is provided on the bottom surface of the main body base 5 inside the main body support portion 3 via two wafer stage suspension portions 41 arranged so as to sandwich the projection system holding portion 11 in the Y direction. Wafer base 42 as
Is suspended and supported. The upper surface of the wafer base 42 is processed into a guide surface having extremely good flatness, and two wafer stages 43A and 43B are smoothly placed on the guide surface via air bearings so as to be slidable in the X and Y directions. The wafers W1 and W2 as substrates to be exposed are held on the wafer stages 43A and 43B via a wafer holder (not shown) by vacuum suction or the like.

The wafer stages 43A and 43B are continuously moved in the Y direction via stepping mechanisms of a linear motor type, not shown, for example, and stepwise moved in the X and Y directions. In this case, a counter balance (not shown) is built in the buffer portion 44 on the frame caster 2 so as to be movable in the Y direction, and the wafer stages 43A and 43B are connected to the counter balance via a link mechanism. The buffer section 44 allows the wafer stages 43A, 43
The reaction force when driving B in the Y direction is almost canceled out, and the occurrence of vibration is suppressed. Furthermore, the wafer stages 43A, 4
Wafers W1 and W2 are provided in the 3B inside in the X direction and Y direction, respectively.
Direction, and three degrees of freedom in the rotational direction around the Z-axis, the wafer W1 is displaced in the Z-direction for leveling and focusing, and is rotated about two axes (ie,
A sample stage for driving with three degrees of freedom of inclination angles (around the X axis and the Y axis) is incorporated.

In this example, a wafer stage 42 of the double wafer stage type (or twin stage type) is constituted by the wafer base 42, the wafer stages 43A and 43B, and the driving mechanism thereof. In this configuration, for example, the wafer W1 is placed on the first wafer stage 43A side.
Since the wafer W2 can be exchanged and aligned on the side of the second wafer stage 43B during the scanning exposure for, the high throughput can be obtained.

A pair of wafer Y-axis interferometers 45A and 45B are provided on the lower side surface of the projection system holding unit 11 which faces the Y direction.
Is installed, and three sets of wafer X-axis interferometers (not shown) are installed on the lower side surface of the projection system holding unit 11 in the X direction so as to correspond to the projection optical system PL and the alignment sensors 46A and 46B. From the measurement information of these interferometers, the positions of the wafer stages 43A and 43B in the X and Y directions, and the rotation angle (yaw amount) about the Z axis,
The rotation angle around the X axis (pitching amount) and the rotation angle around the Y axis (rolling amount) are obtained. Further, the focus positions of the wafers W1 and W2 during exposure (projection optical system PL
Position in the optical axis direction) and the tilt angle are measured by the above-mentioned autofocus sensors (47A, 47B),
The measurement information from these interferometers and autofocus sensors is supplied to the wafer stage drive system 83 and the main control system 81 that controls the operation of the entire apparatus in FIG. Main control system 81
Based on the control information from the wafer stages 43A, 43
The position and speed of B, and the focus position and tilt angle of the wafers W1 and W2 are controlled.

A wafer transfer mechanism (not shown) for transferring wafers between the wafer loader system WL in the interface column 16 and the wafer stages 43A and 43B, and a mechanism (not shown) for pre-aligning the wafers are also provided. It is provided. When vacuum ultraviolet light is used as the exposure beam (exposure light) as in this example, the vacuum ultraviolet light is oxygen, water vapor, hydrocarbon-based gas (carbon dioxide, etc.), organic matter, etc. which are usually present in the atmosphere. In order to prevent the exposure beam from being attenuated, a gas through which the exposure beam passes, that is, nitrogen (N ₂ ) gas or helium (He), It is necessary to supply a gas (purge gas) from which impurities are highly removed with a rare gas such as neon (Ne). Therefore, also in this example, the reticle stage system RS
T is housed in a reticle chamber (not shown) as an airtight chamber, the wafer stage system WST is also housed in a wafer chamber (not shown) as an airtight chamber, and the projection optical system PL is hermetically sealed. The space between the reticle chamber 15 (second illumination system IL2) and the reticle chamber, the space between the reticle chamber and the projection optical system PL, and the space between the projection optical system PL and the wafer chamber are flexible. However, it is covered with a covering member (not shown) having excellent gas barrier properties. The purge gas is supplied from a purge gas supply mechanism (not shown) to the sub-chambers 19 and 15, the reticle chamber and the wafer chamber, and the projection optical system PL.

When ArF excimer laser light (wavelength 193 nm) is used as the exposure light IL, for example, an optical system (B) arranged between the exposure light source 17 and the reticle R is used.
The purge gas may be supplied only to the MU 18, the first and second illumination systems IL1 and IL2), and the projection optical system PL. However, the wavelength of the exposure light IL is 180 n
When using vacuum ultraviolet light of about m or less, the purge gas is also supplied to the space between the second illumination system IL2 and the projection optical system PL and the space between the projection optical system PL and the wafer as described above. Preferably.

Next, the configuration of the reticle stage system RST of this example will be described in detail with reference to FIGS. Figure 2
2A is a plan view showing the reticle stage system RST of FIG. 1, FIG. 2B is a front view in which some members of FIG. 2A are cut away, and FIG. FIG. 4 is a diagram showing a part, and FIG. 4 shows a control system of reticle stage system RST.
As shown in FIGS. 2 (A) and 2 (B), three active type vibration isolation tables 8A, 8B, and 8C are mounted on the reticle stage support 7 (corresponding to the active isolation table 8 of FIG. 1 as a whole). The fine movement stage support base 9 is installed via the air-conditioner, and the guide surface on the fine movement stage support base 9 is smoothly displaced in the X direction (non-scanning direction), the Y direction (scanning direction), and the rotation direction via the air pad 51. A fine movement stage 31 that freely holds the reticle R is mounted. The fine movement stage 31 is levitationally supported on the guide surface thereof with a space of, for example, several μm maintained by the balance between the air (or the same gas as the purge gas) jetting force of the air pad 51 and the vacuum preload. As described above, each of the active vibration isolation bases 8A to 8C is a mechanical damper such as an air damper or a hydraulic damper that bears a large weight, and an electromagnetic damper including an electromagnetic actuator such as a voice coil motor. Is included. By the leveling control system 85 of FIG. 4, the three active vibration isolation platforms 8A to 8C are used.
By controlling the thrusts of the electromagnetic dampers therein independently of each other, the distance between the reticle R and the projection optical system PL (the distance in the optical axis AX direction) and the two axes orthogonal to each other in a plane perpendicular to the optical axis AX. Is configured so that the tilt angle of the reticle R can be controlled around (for example, around the X axis and the Y axis).

2A and 2B, a Y-axis guide member support base 37 is arranged on the reticle stage support base 7 parallel to the fine movement stage support base 9 along the Y-axis.
A pair of cylindrical holding frames 38A and 38B are arranged on the Y-axis guide member support base 37 so as to face each other along the Y-axis. A rod-shaped reticle Y-axis guide member 32 having a substantially square cross section is held along the Y-axis in the holding frames 38A and 38B so as to be slidable smoothly in the Y direction via air bearings. Then, on the reticle Y-axis guide member 32, a recessed portion on the bottom surface of the coarse movement stage 33 on the −X direction side is placed slidably in the Y direction via an air bearing, and the recessed portion on the + X direction side of the coarse movement stage 33 is mounted. The fine movement stage 31 is arranged so as to face the inner surface 33a of the L-shaped portion.

Further, X on the inner surface 33a of the coarse movement stage 33 is
Stator 57A, 57B having a U-shaped cross section is fixed at a predetermined interval in the X direction at a portion parallel to the axis, and a U-shaped stator 57C having a U-shaped cross section is provided at a portion parallel to the Y axis of the inner surface 33a (see FIG. 3).
(See (B)) is fixed. Stator 57A, 57B
And 57C so that the tips are inserted into
Movable elements 56A, 56B, and 56C are fixed to the −Y-direction side surface and the −X-direction side surface of the fine movement stage 31.
2 from movers 56A and 56B and stators 57A and 57B
Voice coil motor type Y-axis actuators 58YA and 58YB are configured by two non-contact methods, and mover 56C
Also, a non-contact type voice coil motor type X-axis actuator 58X is constituted by the stator 57C. By the X-axis actuator 58X as the fine movement mechanism and the two Y-axis actuators 58YA, 58YB, the fine movement stage 31 holding the reticle R with respect to the coarse movement stage 33 during scanning exposure is relatively stationary in a non-contact manner. And is finely moved in the rotation directions around the X-direction, the Y-direction, and the Z-axis so as to correct the synchronization error with the wafer, if necessary.

The actuators 58X, 58YA,
As the 58YB, in addition to the voice coil motor, an ordinary linear motor is downsized, or one pair of stators is used.
An EI core type actuator or the like that pushes and pulls one mover with an electromagnetic force can be used. Further, the reticle Y-axis guide member 32 includes a stator 53 provided on the upper surface of the reticle Y-axis guide member 32 along the Y-axis and a mover 54 provided on the bottom surface of the coarse movement stage 33 so as to face the stator 53. The coarse movement stage 33 relative to the member 32 in a non-contact manner
A Y-axis linear motor 55 is configured as a coarse movement drive device for driving the motor in the Y direction. Y-axis linear motor 5
5 and 3 actuators 58X, 58YA, 58Y
The operation of B is controlled by the scanning control system 86 of FIG. The reticle Y-axis guide member 32 of this example is a holding frame 38A.
And 38B in the Y direction, the coarse movement stage 33 (the fine movement stage 31 is connected) to the reticle Y-axis guide member 32 is moved in the + Y direction (or −).
When driving in the Y direction), the reticle Y-axis guide member 32 as a counter balance (balance member) moves in the opposite direction, the -Y direction (or + Y direction) so as to cancel the reaction force of the driving. . As a result, when the fine movement stage 31 is driven in the scanning direction via the coarse movement stage 33, the generation of vibration is suppressed, so that the exposure accuracy (resolution of the transferred pattern, overlay accuracy, etc.) is kept high. It

Further, in this example, the coarse movement stage 33 moves along the reticle Y-axis guide member 32, and since only the fine movement stage 31 is mounted on the fine movement stage support base 9, the fine movement stage support base 9 is provided. The load on the can be reduced. Therefore, the variation amount of the load distribution on the fine movement stage support 9 at the time of scanning exposure can be reduced, so that the generation of vibration can be suppressed also from this viewpoint.

Since the reticle Y-axis guide member 32 of this example is movable in the Y direction, the center position may gradually deviate in the + Y direction or the -Y direction during scanning exposure. In order to prevent this, as shown in FIG. 4, a photoelectric type, a magnetic type, or a capacitance type as a relative position sensor for reading a scale (not shown) provided on the side surface of the reticle Y-axis guide member 32. A linear encoder 61 such as the above is provided on the Y-axis guide member support base 37. Then, a mover including a stator 53 provided on the reticle Y-axis guide member 32,
A Y-axis linear motor 60 as a position adjusting drive device is constituted by a stator 59 provided in one holding frame 38B. The measurement information of the linear encoder 61 is shown in FIG.
Is supplied to the scanning control system 86 via the coordinate measuring system 84 of
The scanning control system 86 periodically returns the center position of the reticle Y-axis guide member 32 in the Y direction to the center position of the Y-axis guide member support base 37 via the Y-axis linear motor 60, for example.

Returning to FIG. 2, the position measuring system of the fine movement stage 31 will be described. First, the reticle Y-axis interferometer 3
4 is two Y-axis interferometers 63Y separated by a predetermined distance in the X direction.
The fine movement stage 31 is composed of A and 63YB and is parallel to the Y axis from the Y axis interferometers 63YA and 63YB.
Of the measurement beams LC1 and LC2 on the corner cube type moving mirrors 62YA and 62YB arranged at the ends of the + Y direction.
Is being irradiated. The centers of the optical axes (measurement axes) of the measurement beams LC1 and LC2 pass through the center of the illumination area 36 of the exposure light with respect to the reticle R (which coincides with the optical axis AX of the projection optical system PL in this example). , Further measurement beam LC
The optical axes of 1 and LC2 have almost the same height as the pattern surface of the reticle R. The Y-axis interferometers 63YA and 63YB are arranged such that the positions of the movable mirrors 62YA and 62YB of the fine movement stage 31 are, for example, 10 nm to 1 nm with reference to a reference mirror (not shown) provided on the side surface of the projection optical system PL in the + Y direction.
The measurement is performed with a resolution of about a degree, and the measurement information is supplied to the coordinate measuring system 84 in FIG. In the coordinate measuring system 84, the position R in the Y direction (scanning direction) of the fine movement stage 31 (reticle R) is referenced from the measurement information based on the projection optical system PL.
A rotation angle (yaw amount) RθZ around the Y and Z axes is calculated.

Next, a rod-shaped movable mirror 64 having a substantially square cross section is arranged along the Y direction at the end of the fine movement stage 31 in the + X direction, and the position of the movable mirror 64 in the X and Z directions is set. Reticle X-Z axis interferometer 35 for measurement
Are arranged. 3A is a plan view showing a main part of FIG. 2A, and FIG. 3B is a side view in which a part of FIG. In A) and (B), the reticle X-Z axis interferometer 35 is a projection optical system PL.
And an optical system block 67 having four reflecting surfaces (or partial reflecting surfaces) 67a to 67d arranged on the illumination system support 13 that is integrally supported with the optical system block 67, and the optical system block 67 (not shown). A right-angle prism type reflecting mirror 69 held above the movable mirror 64 via the frame of the right-angle prism type, and a right-angle prism type reflecting mirror 68 held by the illumination system support 13 via a frame (not shown). I have it. In this case, the optical system block 67 is inserted into the opening 7a provided in the reticle stage support 7, the reflecting mirror 68 is held substantially in the opening 7a, and the projection optical system PL on the bottom side of the reflecting mirror 68 is provided. An X-axis reference mirror 65X is fixed to the side surface in the + X direction. In addition, the optical system block 6 on the illumination system support 13
An X-Z axis detection unit 66 including a laser light source and a plurality of (four as an example) photoelectric detectors is arranged near 7. Reticle X-Z axis interferometer 35 and X-Z axis detector 6
6 corresponds to the interferometer for measuring the interval of the present invention.

In this example, a four-axis laser beam is emitted from the X-Z-axis detecting section 66 as an example, and the emitted four-axis laser beam is emitted from the first reflecting surface 6.
After being bent in the + Z direction at 7a, the first laser beam is split at the second partially reflecting surface 67b into a measurement beam LB1 (transmission beam) and a reference beam LR1 (reflection beam). The measurement beam LB1 passes through the third partial reflection surface 67c in the + Z direction, and then −X at the fourth reflection surface 67d.
Then, the light is reflected in the direction and enters the reflecting surface of the moving mirror 64 in the + X direction (which is substantially perpendicular to the X axis) substantially vertically. Moving mirror 64
The measurement beam LB1 reflected by is traced an optical path substantially opposite to that at the time of incidence and is incident on the first photoelectric detector 66X (see FIG. 4) in the XZ axis detection unit 66 via the reflection surfaces 67d to 67a. . In addition, the reference beam LR1 has a partial reflection surface 67.
It is reflected from b in the −X direction and is incident on the reflection surface of the reference mirror 65X in the + X direction (which is substantially perpendicular to the X axis) substantially perpendicularly,
The reference beam LR1 reflected by the reference mirror 65X follows the optical path substantially opposite to that at the time of incidence and is combined with the measurement beam LB1 via the reflecting surfaces 67b and 67a. Therefore, based on the measurement information of the first photoelectric detector 66X, the position of the moving mirror 64 of the fine movement stage 31 in the X direction (non-scanning direction) with reference to the reference mirror 65X of the projection optical system PL is, for example, 10 nm to 1 nm.
It can be measured with a resolution of a certain degree.

On the other hand, of the four-axis laser beams emitted from the X-Z axis detection unit 66, the second to fourth laser beams transmitted through the second partial reflection surface 67b are the third partial reflection surfaces. After being reflected in the -X direction by 67c, the three-axis measurement beams LB2 to LB4 (reflected beams) that are directed in the + Z direction by the first surface (beam splitter surface) 68a of the reflecting mirror 68 and proceed in the -X direction as they are 3 It is divided into axial reference beams LR2 to LR4 (transmission beams). The measurement beam LB of the three axes
2 to LB4 travels in the + Z direction and is reflected by the reflecting mirror 69 to 180.
The light is reflected and enters the reflecting surface (which is substantially perpendicular to the Z axis) on the upper surface of the movable mirror 64 substantially perpendicularly. As shown in FIG. 3 (A), the three-axis measurement beams LB2 to LB4 have a positional relationship in which the three points do not lie on the same straight line, that is, in the present example, a positional relationship in which the points are approximately isosceles triangles. It is incident on the moving mirror 64.
The measurement beams LB2 to LB4 are attached to the fine movement stage support base 9.
A notch 9a is provided for passing through. The measurement beams LB2 to LB4 reflected by the moving mirror 64 follow an optical path substantially opposite to that at the time of incidence, pass through the reflecting mirror 69, the first surface 68a of the reflecting mirror 68, and the reflecting surfaces 67c to 67a to detect the XZ axis. The light enters the second to fourth photoelectric detectors 66Z (see FIG. 4) in the portion 66.

Further, the three-axis reference beams LR2 to LR
Reference numeral 4 is transmitted through the first surface 68a of the reflecting mirror 68, is reflected in the −Z direction by the second surface (reflecting surface) 68b, and is almost on the reflecting surface (which is substantially perpendicular to the Z axis) of the upper surface of the reference mirror 65X. Vertical incidence. The positional relationship between the reference beams LR2 to LR4 is shown in FIG.
This is similar to the positional relationship between the measurement beams LB2 to LB4 in (A). Reference beams LR2 to L reflected by the reference mirror 65X
R4 traces an optical path substantially opposite to that at the time of incidence and is combined with the measurement beams LB2 to LB4 via the second surface 68b and the first surface 68a of the reflecting mirror 68, respectively. Therefore, from the measurement information of the second to fourth photoelectric detectors 66Z, the position of the movable mirror 64 of the fine movement stage 31 in the Z direction (or the variation amount of the distance in the optical axis AX direction) is set to 3 with reference to the reference mirror 65X. Each point can be measured with a resolution of, for example, about 10 nm to 1 nm.

As described above, the reticle X-Z axis interferometer 35 of the present embodiment makes the two reflecting surfaces of the moving mirror 64 orthogonal to each other and the two reflecting surfaces of the reference mirror 65X orthogonal to each other, so that the detection target is extremely excellent. With a compact configuration, the position of the fine movement stage 31 (reticle R) in the X direction and the position of the fine movement stage 31 (reticle R) in the Z direction at three points can be measured with reference to the projection optical system PL. X-Z
The measurement information of the four photoelectric detectors 66X and 66Z in the axis detector 66 is supplied to the coordinate measuring system 84 of FIG.

In FIG. 4, the coordinate measuring system 84 is a position RX in the X direction of the fine movement stage 31 holding the movable mirror 64, and by extension, the reticle R, based on the measurement information of the X-axis photoelectric detector 66X, based on the projection optical system PL. From the measurement information of the three Z-axis photoelectric detectors 66Z, the movable mirror 64 based on the projection optical system PL, and thus the position of the fine movement stage 31 in the Z direction (that is, the projection optical system PL and the fine movement stage 31). RZ, and a rotation angle (pitching amount) Rθ of the fine movement stage 31 with respect to a plane perpendicular to the optical axis AX and a rotation angle (rolling amount) around X and Y axes.
Calculate RθY. The coordinate measuring system 84 includes the fine movement stage 3
The information of the positions RX and RY in the X direction and the Y direction of 1 and the rotation angle RθZ about the Z axis is supplied to the scanning control system 86 and the main control system 8.
1, the positions RX, RY of the fine movement stage 31 in the X and Y directions, the position RZ of the Z direction, and the X axis, Y.
Information on the rotation angles RθX and RθY about the axes is supplied to the leveling control system 85. In FIG. 4, the coordinate measuring system 84,
The leveling control system 85 and the scanning control system 86 constitute a reticle stage drive system 82 that drives the reticle stage system RST.

Next, an example of the operation when scanning exposure is performed by the projection exposure apparatus of this example will be described. At this time, the alignment of the reticle R is performed in advance, and the fine movement stage support 9 and the fine movement stage 31 (reticle R) in FIG.
The main control system 81 recognizes the positional relationship between and in the X direction, the Y direction, and the rotation direction around the Z axis. Furthermore, when the projected image of the pattern of the reticle R is projected on the wafer in the best state by, for example, a test print, it is measured by the reticle XZ axis interferometer 35 and the XZ axis detection unit 66 of FIG. The value of the position RZ of the fine movement stage 31 (reticle R) in the Z direction (hereinafter referred to as “target value RZ1”) and the rotation angles RθX and RθY about the X axis and the Y axis.
Value (hereinafter, referred to as “target value RθX1, RθY1”)
Is determined and stored in the storage unit in the main control system 81. The main control system 81 has its target values RZ1, RθX1, R
The information of θY1 is supplied to the leveling control system 85.

Further, the fine movement stage 31 with respect to the measured values RX and RY of the positions of the fine movement stage 31 in the X and Y directions.
The offsets ΔRXG and ΔRYG of the position of the center of gravity G of are calculated in advance and stored in the storage unit in the main control system 81. Furthermore, the relationship between the center-of-gravity positions GX and GY of the fine movement stage 31 in the X and Y directions and the distribution of the load applied to each of the three active vibration isolation stages 8A to 8C that support the fine movement stage support 9 (hereinafter , "Relationship between center of gravity and load distribution F (G
X, GY) ". ) Is obtained by calculation or experimentally, and is stored in the storage unit in the main control system 81.
The main control system 81 uses the offset ΔRXG, Δ before exposure.
Information on the relationship F (GX, GY) between the RYG and the center of gravity and the load distribution is supplied to the leveling control system 85.

Next, the alignment sensor 46A shown in FIG. 1 is used to align the wafer W1 on the first wafer stage 43A. After that, the main control system 81 in FIG. 4 moves the wafer stage 43A in FIG. 1 to the scan start position via the wafer stage drive system 83, and at the same time, causes the scan control system 86 in the reticle stage drive system 82 to move. By driving the coarse movement stage 33 via the fine movement stage 33, the fine movement stage 31 in the reticle stage system RST is moved to the scanning start position (the end portion of the fine movement stage support 9 in the + Y direction or the −Y direction). From this state, under the control of the main control system 81, the fine movement stage 31 and the wafer stage 43A are scanned in synchronism with the projection magnification of the projection optical system PL as the speed ratio, and the exposure light IL is applied to the illumination area 36. Then, the image of the pattern of the reticle R is sequentially transferred to the first shot area on the wafer W1 in FIG. 1 by the scanning exposure method.

In this case, the coarse movement stage 33 of the reticle stage system RST moves in the + Y direction or -Y at a constant scanning speed.
The fine movement stage 31 is driven in the direction. Then, a reticle interferometer (35, 63YA, 63) is provided so as to cancel a synchronization error between the wafer W1 and the reticle R remaining during the scanning exposure.
Of the position information of the fine movement stage 31 detected by YB), the positions RX and RY in the X and Y directions, the rotation angle (yaw amount) RθZ about the Z axis, and the wafer interferometer (45
A, 45B, etc.) based on the position information of the wafer stage (including at least the position in the X and Y directions and the yawing amount) detected by the X-axis and Y-axis actuators 58X, 58YA, 58YB. Stage 3
3, the fine movement stage 31 (reticle R) is in the X direction,
It is driven by a small amount in the Y direction and the rotation direction around the Z axis. At this time, since the fine movement stage 31 can be made compact and lightweight, the synchronization error can be corrected with high response speed and high precision, and high exposure precision can be obtained. In addition, in this example, FIG.
As shown in, the fine movement stage 31 for moving the reticle R
The projection optical system PL and the wafer stages 43A and 43B that move the wafers W1 and W2 are the active vibration isolation table 8 (8A-
8C) and the active vibration-proof base 10 are independently supported, so that the vibration generated when the fine movement stage 31 and the wafer stages 43A and 43B are driven does not adversely affect the projection optical system PL and the like. Further, higher exposure accuracy can be obtained.

In this example, the fine movement stage 31 is finely moved to cancel the above synchronization error. However, instead of the fine movement stage 31, or in combination with the fine movement stage 31, the sample stage of the wafer stage is moved in the X and Y directions. , And the synchronization error may be canceled by fine movement in three degrees of freedom in the rotation direction around the Z axis. Further, in the leveling control system 85 of FIG. 4, the position RX, RY in the X direction and the Y direction, the position RZ in the Z direction, and the X axis, Y of the fine movement stage 31 supplied from the coordinate measuring system 84.
Based on the information about the rotation angles RθX and RθY about the axes, the position RZ of the fine movement stage 31 in the Z direction and the rotation angles RθX and RθY about the X and Y axes are the target values R, respectively.
Three active vibration-isolation bases 8A to 8 that support the fine movement stage support base 9 so as to match Z1 and RθX1 and RθY1.
The thrust in the Z direction of the electromagnetic damper in C is controlled. For this reason, the leveling control system 85 has the positions RX, RY of the fine movement stage 31 and the offset ΔRXG,
The position GX, G of the center of gravity G of the fine movement stage 31 from ΔRYG
Y is calculated from the following equation.

GX = RX + ΔRXG (1A) GY = RY + ΔRYG (1B) Further, the leveling control system 85 further includes a relationship F (GX, G) between the center of gravity and the load distribution supplied from the main control system 81.
By applying the positions GX and GY of the center of gravity G to Y), the loads on each of the three active vibration isolation bases 8A to 8C are calculated, and the active vibration isolation base 8A is calculated according to these loads.
~ Active vibration isolation table 8A so that the height of 8C is constant ~
Control the thrust of the electromagnetic damper in 8C. This is the active vibration isolation table 8A depending on the position of the fine movement stage 31 in the scanning direction.
It means that the thrust of the electromagnetic damper in 8C is controlled by the feedforward method. Then, the position RZ of the fine movement stage 31 remaining by this control and the target values RZ1 of the rotation angles RθX and RθY, and RθX1 and RθX1 and RθY.
Further, the thrusts of the electromagnetic dampers in the active vibration isolation bases 8A to 8C are controlled so as to correct the error with respect to θY1. As a result, the fine motion stage support base 9 is moved to the active vibration isolation bases 8A to 8A.
Even if the position of the fine movement stage 31 in the scanning direction greatly changes during scanning exposure while being supported via C, the distance between the projection optical system PL and the reticle R and the X-axis of the reticle R at a high response speed. The rotation angle around the Y axis can be maintained in a state in which the best imaging characteristics can be obtained. This is due to the eccentric load accompanying the movement of the fine movement stage 31.
This means suppressing fluctuations in the positional relationship between the (reticle R) and the projection optical system PL.

In parallel with this operation, on the wafer stage system WST side of FIG. 1, an autofocus sensor (47A,
Wafer stage 4 so that the surface of wafer W1 is focused on the image plane of projection optical system PL based on the measurement information of 47B).
The sample stage in 3A is driven. As a result, the wafer W1
The image of the pattern of the reticle R is transferred to the shot area of 1 in the best condition.

By repeating the step movement of the wafer stage 43A and the above operation, scanning exposure is performed on the entire shot area of the wafer W1. Then the second
Similarly, scanning exposure is performed on the wafer W2 on the wafer stage 43B. In the reduction projection method like this example, the wafer stages 43A, 4A
The fine movement stage 31 for the reticle is scanned at a higher speed than 3B. Therefore, it is the scanning speed of the fine movement stage 31 that determines the exposure time for each shot area on the wafer. In this regard, in this example, the reticle stage system RST
The coarse movement stage 33 does not contact the fine movement stage support 9 and only the small and lightweight fine movement stage 31 moves on the fine movement stage support 9. Therefore, on the fine movement stage support base 9, with the generation of vibration suppressed,
Since the fine movement stage 31 can be moved at high speed,
It is possible to shorten the exposure time for each shot area and increase the throughput of the exposure process.

In the above embodiment, the coarse movement stage 33 and the reticle Y-axis guide member 32 of the reticle stage system RST shown in FIG. 1 are supported on the reticle stage support base 7. The 33 and the reticle Y-axis guide member 32 may be supported by another column installed on the frame caster 2.

Next, the reticle X-Z of the above-described embodiment is used.
Another embodiment of the axis interferometer 35 will be described with reference to FIG. 5, parts corresponding to those in FIG. 3 are denoted by the same or similar reference numerals, and detailed description thereof will be omitted. Figure 5
FIG. 5A is a plan view showing the main part of this example, and FIG.
FIG. 6 is a side view in which (A) is partially cut away when viewed in the −Y direction, and in FIGS. 5A and 5B, a movable mirror 64A attached to the side surface of the fine movement stage 31 in the + X direction has a cross section. The shape is almost square, and the side surface and the bottom surface in the + X direction are mirror-finished. The reticle X-Z axis interferometer 35A of this example is an optical system block 70 that is disposed on the illumination system support 13 and has three reflecting surfaces (or partial reflecting surfaces) 70a to 70c, and this optical system block 70. And an optical system block 71 having two reflecting surfaces (or beam splitter surfaces) 71a and 71b fixed thereto and two right-angle prism type reflecting mirrors 72 and 73 fixed to the optical system block 71. ing. In this case, the optical system blocks 70, 71
Is inserted into the opening 7a of the reticle stage support 7, the reflecting mirror 73 is held substantially in the opening 7a, and the reflecting mirror 72 is located on the bottom surface side of the X-axis reference mirror 65X on the side surface of the projection optical system PL. It is fixed. Further, near the optical system block 70, an XZ including a laser light source and four photoelectric detectors is provided.
The axis detector 66A is arranged.

In this example, of the four-axis laser beams emitted from the X-Z-axis detecting section 66A, the first laser beam is bent in the + Z direction by the first reflecting surface 70a and then the second laser beam is bent. The partial reflection surface 70b is divided into a measurement beam LB1 (transmission beam) and a reference beam LR1 (reflection beam). The measurement beam LB1 is reflected in the −X direction by the third reflecting surface 70c and is incident on the reflecting surface of the moving mirror 64A in the + X direction substantially vertically. The measurement beam LB1 reflected by the moving mirror 64A traces an optical path substantially opposite to that at the time of incidence, passes through the reflecting surfaces 70c to 70a, and then passes through the reflecting surfaces 70c to 70a.
Incident on the photoelectric detector. Further, the reference beam LR1 is
The reference beam LR1 reflected from the reflecting surface 70b in the −X direction and substantially vertically incident on the reflecting surface of the reference mirror 65X in the + X direction, and reflected by the reference mirror 65X is reflected along an optical path substantially opposite to that at the time of incidence. Measurement beam LB through surfaces 70b and 70a
Combined with 1. Therefore, the position in the X direction (non-scanning direction) of the movable mirror 64A of the fine movement stage 31 can be measured from the measurement information of the first photoelectric detector with reference to the reference mirror 65X of the projection optical system PL.

On the other hand, of the four-axis laser beams emitted from the X-Z axis detection unit 66A, the second to fourth laser beams transmitted through the first partial reflection surface 70a are + Z at the beam splitter surface 71a. Axis Measurement Beam LB2
~ LB4 (reflected beam) and proceed in the -X direction as is 3
It is divided into axial reference beams LR2 to LR4 (transmission beams). The three-axis measurement beams LB2 to LB4 are reflected in the −X direction by the reflecting surface 71b and in the + Z direction by the reflecting mirror 73, and are reflected on the bottom reflecting surface of the moving mirror 64A (almost perpendicular to the Z axis). It is incident almost vertically. As shown in FIG. 5A, the triaxial measurement beams LB2 to LB4 are incident on the movable mirror 64A in a positional relationship in which the three points do not come on the same straight line. The measurement beams LB2 to LB are attached to the fine movement stage support base 9.
A cutout portion 9b for passing B4 is provided. The measurement beams LB2 to LB4 reflected by the moving mirror 64A are
The reflecting mirror 73 and the reflecting surface 7 are traced along the optical path substantially opposite to that at the time of incidence.
It is incident on the second to fourth photoelectric detectors in the X-Z axis detection unit 66A via 1b, 71a and 70a.

The triaxial reference beams LR2 to LR4 transmitted through the beam splitter surface 71a are reflected by the reflecting mirror 72.
Then, the light is reflected in the + Z direction and is incident on the reflection surface (which is substantially perpendicular to the Z axis) of the bottom surface of the reference mirror 65X substantially vertically. The positional relationship between the reference beams LR2 to LR4 is the same as the positional relationship between the measurement beams LB2 to LB4 in FIG. The reference beams LR2 to LR4 reflected by the reference mirror 65X follow an optical path substantially opposite to that at the time of incidence, pass through the reflecting mirror 72 and the beam splitter surface 71a, and are respectively measured beams LB2 to L.
Synthesized with B4. Therefore, from the measurement information of the second to fourth photoelectric detectors, the position of the movable mirror 64 of the fine movement stage 31 in the Z direction (or the variation amount of the interval in the optical axis AX direction) with respect to the reference mirror 65X is set as three points. Can be measured at.

As described above, in the reticle X-Z axis interferometer 35A of this example, the bottom surface of the moving mirror 64A is set as a detection target, so that no reflecting mirror is arranged above the reticle R, that is, the reticle stage. While simplifying the configuration on the system side, it is possible to measure the position of the fine movement stage 31 (reticle R) in the X direction and the position of the fine movement stage 31 (reticle R) in the Z direction at three points with reference to the projection optical system PL.

In the above embodiment, the active vibration isolation table 8A is used.
.About.8C (thrust force of the electromagnetic damper) is used to maintain the distance between the reticle R and the projection optical system PL and the rotation angle at a predetermined state, but instead of the active vibration isolation tables 8A to 8C, or In combination with the above, an adjustment device that relatively moves the image plane of the projection optical system PL and the wafer W may be used to best maintain the pattern image of the reticle R projected on the wafer by the projection optical system PL. Specifically, in the position information of the fine movement stage 31 detected by the reticle interferometer (35, 63YA, 63YB), the position RZ in the Z direction,
Due to changes in the relative positional relationship (spacing and rotation) between the reticle R and the projection optical system PL, based on the rotation angles RθX and RθY about the X axis and the Y axis and the measurement information of the autofocus sensors (47A, 47B). Resulting wafers W1 and W2
To correct the fluctuation of the image formation state of the reticle pattern above,
That is, the image plane of the projection optical system PL and the surface of the wafer substantially match in the irradiation area of the exposure light IL on the wafer (projection area of the pattern image) (in other words, the effective focus of the projection optical system PL). The sample stage of the wafer stages 43A and 43B may be driven so that the surface of the wafer is set within the depth. The adjusting device only needs to be able to adjust the position in the Z direction and the tilt angles around the X axis and the Y axis on at least one of the reticle R, the wafer, and the image plane of the projection optical system PL.

Here, when driving the reticle R, the fine movement stage 31 is moved with respect to the coarse movement stage 33 in the X direction.
In addition to the three degrees of freedom in the Y direction and the rotation direction around the Z axis,
The reticle R may be configured to be finely movable in three degrees of freedom in the Z direction, the rotation directions around the X axis and the Y axis, or the reticle R may be moved relative to the fine movement stage 31 in the rotation directions around the Z direction, the X axis and the Y axis. It may be configured to be capable of fine movement with three degrees of freedom. Further, for example, by moving at least one optical element of the projection optical system PL, the imaging characteristics (aberration, etc.) of the projection optical system PL are adjusted so that the image plane is moved (including inclination). You may

Further, in the above embodiment, the yawing amount of the reticle stage (fine movement stage 31) is determined by the Y-axis interferometer 63.
Although the YA and 63YB are used for detection, it is possible to measure the yawing amount by adding a uniaxial laser beam parallel to the first laser beam and separated by a predetermined distance in the Y direction with the XZ interferometer 35. Good. In this case, the fine movement stage 31
One corner cube type moving mirror and one Y-axis interferometer may be provided. Further, in the above embodiment, the movable mirrors 62YA, 62Y of the fine movement stage 31 irradiated with the laser beams of the Y-axis interferometers 63YA, 63YB.
Although B is a corner cube type, a moving mirror whose reflection surface is a flat surface may be used, or the end surface (side surface) of the fine movement stage 31 may be mirror-finished to be a reflection surface. At this time, only a single reflecting surface extending in the X direction longer than the distance between the laser beams of the Y-axis interferometers 63YA and 63YB may be formed.

Further, in the above embodiment, the XZ interferometer 3 is used.
Although the movable mirror 64 for reflecting each laser beam of No. 5 is a separate body from the fine movement stage 31 and has two side surfaces, the side surface and the upper surface (or the lower surface), as reflection surfaces, the end surface (extending in the Y direction of the fine movement stage 31 ( An integrated type may be used in which the side surface) and the upper surface (or the lower surface) are mirror-finished to form reflecting surfaces. In the above embodiment, the fine movement stage 31 is moved by the XZ interferometer 35.
Position RZ in the Z direction and rotation angle Rθ around the X and Y axes
Although X and RθY are measured, for example, one of the Y-axis interferometers 63YA and 63YB is added with a uniaxial laser beam parallel to the laser beam and separated by a predetermined distance in the Z direction to rotate around the X axis. (Pitching amount) RθX can be measured, and the X-Z interferometer 35 measures the position of the fine movement stage 31 in the Z direction at only two points to determine the positions RZ and Y in the Z direction.
It is sufficient to obtain only the rotation angle RθY about the axis.

Further, in the above embodiment, the wafer base 42 on which the wafer stage is arranged is fixed to the main body base 5 by the suspending portion 41, but the wafer base 42 may be arranged separately from the main body base 5. Good. For example, an active vibration isolation table different from the active vibration isolation table 4 on which the main body base 5 is placed is installed on the frame caster 2, and the wafer base 42 is placed on this other active vibration isolation table. Alternatively, the active vibration isolation table 10 may not be provided in this configuration. Further, in the above embodiment, two sets of alignment sensors 46A and 46B are used.
However, there is only one set of alignment sensor that detects the mark on the wafer, and the two wafer stages are alternately replaced between the set of alignment sensor and the projection optical system PL. Good. In short,
The exposure apparatus of the present invention is not limited to the configuration shown in FIG.

In the projection exposure apparatus of the above-described embodiment, the illumination optical system and the projection optical system composed of a plurality of lenses are incorporated in the exposure apparatus main body for optical adjustment, and the reticle stage composed of a large number of mechanical parts. The wafer stage can be manufactured by attaching the wafer stage to the main body of the exposure apparatus, connecting wiring and piping, and further performing comprehensive adjustment (electrical adjustment, operation confirmation, etc.). It is desirable that the exposure apparatus be manufactured in a clean room where the temperature and cleanliness are controlled.

Furthermore, when a semiconductor device is manufactured on a wafer by using the projection exposure apparatus of the above-described embodiment, the step of designing the function / performance of the semiconductor device is performed, and the reticle is manufactured based on this step. The step of making a wafer from a silicon material,
The projection exposure apparatus according to the above-described embodiment performs alignment to expose a reticle pattern on a wafer, a device assembly step (including a dicing step, a bonding step, a packaging step), an inspection step, and the like.

The application of the exposure apparatus of the present invention is not limited to the exposure apparatus for manufacturing semiconductor devices.
For example, a liquid crystal display device formed on a rectangular glass plate, an exposure device for a display device such as a plasma display, an imaging device (CCD or the like), a micromachine, a thin film magnetic head, or various devices such as a DNA chip are manufactured. It can be widely applied to an exposure apparatus for Furthermore, the present invention can also be applied to an exposure process (exposure apparatus) when manufacturing a mask (photomask, reticle, etc.) on which mask patterns of various devices are formed using a photolithography process.

Further, the present invention is not limited to a projection exposure apparatus of a scanning exposure system such as a step-and-scan system, but a step-and-repeat system (collective exposure system).
Can also be applied to the projection exposure apparatus. The projection optical system PL may be a refraction system, a catadioptric system, or a reflection system, or may be a reduction system, a unity magnification system, or an enlargement system. Further, the exposure beam is not limited to vacuum ultraviolet light, but may be ultraviolet light or far ultraviolet light, or EUV light.
It may be light, X-rays, or charged particle beams such as electron beams or ion beams.

In these cases, the movable stage (fine movement stage 31) of the wafer stage system or reticle stage system is
It may be held by any method such as an air levitation type using an air bearing or a magnetic levitation type. Further, the movable stage may be a guideless type in which a guide is not provided as in the above embodiment, or may be a type that moves along the guide.

The reaction force generated when the wafer stage or the reticle stage is moved in steps or during acceleration / deceleration such as scanning exposure is described in, for example, US Pat. No. 5,528,11.
No. 8, or U.S. Pat. No. 6,020,710 (JP-A-8-
As disclosed in Japanese Unexamined Patent Publication (Kokai) No. 33022), a frame member may be used to mechanically let the material escape to the floor (ground). As described above, the present invention is not limited to the above-described embodiments, and various configurations can be taken without departing from the gist of the present invention.

[0086]

According to the present invention, since the stage holding the first object (mask) is supported independently of the projection system, there is no vibration between the stage system holding the mask and the projection optical system. There is an advantage that it is difficult to convey. Further, the positional relationship between the stage and the projection system is measured, and at least one of the interval and the inclination angle between the stage and the projection system is controlled during the exposure of the second object (substrate) based on the measurement information. By supporting the mask and the projection system independently of each other by controlling the positional relationship between the projection system and the second object (substrate), and the image plane of the projection system and the exposure surface of the second object. It is possible to satisfy both the requirement of maintaining the positional relationship between and in a predetermined state, and high exposure accuracy can be obtained.

Further, by suppressing the variation of the positional relationship due to the eccentric load accompanying the movement of the stage, the present invention is applied to the scanning exposure type exposure apparatus, and the position of the movable portion which holds and moves the mask changes. Even in this case, the positional relationship between the image plane of the projection system and the exposure surface of the substrate can be maintained in a predetermined state, and high exposure accuracy can be obtained. Further, according to the device manufacturing method of the present invention, it is possible to mass-produce a highly functional device excellent in overlay accuracy, pattern fidelity and the like.

[Brief description of drawings]

FIG. 1 is a partially cutaway configuration diagram showing a projection exposure apparatus according to an example of an embodiment of the present invention.

2A is a plan view showing the reticle stage system of FIG. 1, and FIG. 2B is a front view in which a part of FIG. 2A is cut away.

3A is a plan view showing a main part of the reticle stage system of FIG. 2A, and FIG. 3B is a side view with a part cut away when FIG. is there.

FIG. 4 is a diagram showing a control system of a reticle stage system of the embodiment.

5A is a plan view showing a main part of a reticle stage system according to another example of the embodiment of the present invention, and FIG.
It is the side view which notched a part which looked at (A) in the -Y direction.

[Explanation of symbols]

RST ... Reticle stage system, R ... Reticle, PL ... Projection optical system, WST ... Wafer stage system, W1, W2 ... Wafer, 4 ... Active vibration isolation table, 7 ... Reticle stage support table, 8 (8A-8C) ... Active vibration isolation table, 9 ... Fine movement stage support table, 10 ... Active vibration isolation table, 11 ... Projection system holder,
13 ... Illumination system support base, 31 ... Fine movement stage, 32 ... Reticle Y-axis guide member, 33 ... Coarse movement stage, 35, 35
A ... Reticle X-Z axis interferometer, 37 ... Y-axis guide member support base, 55 ... Y-axis linear motor, 58X ... X-axis actuator, 58YA, 58YB ... Y-axis actuator, 6
4, 64A ... Moving mirror, 65X ... Reference mirror, 66, 66A ...
X-Z axis detector

Claims (18)

[Claims] 1. An exposure method for illuminating a first object with an exposure beam and exposing a second object through the first object and a projection system, wherein a stage holding the first object is independent of the projection system. And measuring the positional relationship between the stage and the projection system, and controlling at least one of the interval and the inclination angle between the stage and the projection system during the exposure of the second object based on the measurement information. An exposure method comprising: 2. When measuring a positional relationship between the stage and the projection system, a position of the stage in the optical axis direction of the projection system with respect to the projection system and a position perpendicular to the optical axis are orthogonal to each other. The exposure method according to claim 1, wherein an inclination angle around two axes is measured. 3. When exposing the second object, the first object is exposed.
The object and the second object are synchronously scanned with respect to the projection system, and when controlling at least one of the interval and the tilt angle between the stage and the projection system, the deviation caused by the movement of the stage is controlled. The exposure method according to claim 1, wherein variation in the positional relationship due to the load is suppressed. 4. An exposure apparatus which illuminates a first object with an exposure beam and exposes a second object via the first object and a projection system, comprising a stage for holding the first object, and the stage for projecting the stage. An active anti-vibration mechanism that is supported independently of the system, a measuring device that measures the positional relationship between the stage and the projection system, and the measuring device that measures the positional relationship between the stage and the projection system while the second object is being exposed. An exposure apparatus comprising: a control system that controls at least one of a gap and an inclination angle between the stage and the projection system via a vibration isolation mechanism. 5. A coarse movement stage driven in a predetermined direction with respect to the projection system, and a fine movement for interlocking the stage with the coarse movement stage and adjusting a relative position of the stage with respect to the coarse movement stage. A mechanism and a balance member for canceling a reaction force when driving the coarse movement stage, and exposing the second object, the first object and the second object
The exposure apparatus according to claim 4, wherein the object is scanned in synchronization with the projection system. 6. The exposure apparatus according to claim 5, wherein the coarse movement stage is supported independently of the stage and the projection system. 7. The positional relationship due to an eccentric load accompanying the movement of the stage when the control system controls at least one of a space and an inclination angle between the stage and the projection system via the vibration isolation mechanism. 7. The exposure apparatus according to claim 5, wherein the exposure fluctuation is suppressed. 8. The measuring device includes a movable mirror that indicates a position of the first object held on the stage in a direction perpendicular to a scanning direction, a reference mirror provided in the projection system, and the movable mirror. 8. An interferometer for measuring the distance between the reference mirror and the projection system in the optical axis direction of the projection system with one or a plurality of measurement axes. The exposure apparatus described. 9. An interferometer for measuring a distance of the measuring device,
At least three measurement axes, based on the measurement information of the interferometer, the position of the stage in the optical axis direction of the projection system with respect to the projection system, and two orthogonal axes in a plane perpendicular to the optical axis 9. The exposure apparatus according to claim 8, wherein a tilt angle around is obtained. 10. The exposure apparatus according to claim 8, wherein a part of an optical system of the interferometer for measuring the distance is supported by a support member that supports the projection system. 11. An exposure apparatus which illuminates a first object with an exposure beam and exposes a second object via the first object and a projection system, comprising: a first stage for holding the first object; A second stage for holding an object; and the first and second stages for moving the first and second objects relative to the exposure beam to scan and expose the second object with the exposure beam. And a driving device for driving the first object in synchronization with the first stage, the first and second reference surfaces extending along a predetermined direction in which the first object is moved during the scanning exposure are formed on the first stage, and The positional information of the first stage in the direction orthogonal to the predetermined direction is measured by using the positional relationship between the first stage and the projection system in the optical axis direction of the projection system using the second reference plane. Measure That the measuring device and the measuring exposure apparatus, characterized in that it comprises an adjustment device for adjusting the positional relationship between the image plane and the second object of the projection system during the scanning exposure based on the measurement information of the device. 12. The measuring device has an interferometer system for irradiating the first and second reference surfaces with measuring beams, respectively, and the interferometer system has a position between the first stage and the projection system. The exposure apparatus according to claim 11, wherein the relationship is measured by each of a plurality of measurement axes. 13. The interferometer system has at least three measurement axes, and the relative position of the first stage and the projection system in the optical axis direction based on the measurement information of the interferometer system, and the projection system. 2 orthogonal to the plane perpendicular to the optical axis of
13. The tilt angle about the axis is obtained.
The exposure apparatus according to. 14. The interferometer system comprises at least an optical system through which a measurement beam with which the second reference surface is irradiated passes.
14. The exposure apparatus according to claim 12, wherein the exposure apparatus is provided on a support member that supports the projection system. 15. A coarse movement stage driven in the predetermined direction and the first object are mounted on the first stage,
15. A fine movement stage that moves relative to the coarse movement stage, wherein the coarse movement stage and the fine movement stage are supported independently of each other.
The exposure apparatus according to any one of 1. 16. The exposure apparatus according to claim 15, wherein the coarse movement stage is supported independently of the projection system so as to prevent the propagation of vibrations to the projection system. 17. The adjusting device includes an active vibration isolation mechanism that supports the fine movement stage, and the fine movement stage and the projection system via the vibration isolation mechanism during the scanning exposure based on the measurement information. The exposure apparatus according to any one of claims 11 to 16, which controls a positional relationship between the exposure apparatus and. 18. A device manufacturing method including a step of transferring a device pattern onto a workpiece by using the exposure apparatus according to claim 4.