JP2003304004A - Optical transmission chip and mounting structure thereof - Google Patents
Optical transmission chip and mounting structure thereofInfo
- Publication number
- JP2003304004A JP2003304004A JP2002109556A JP2002109556A JP2003304004A JP 2003304004 A JP2003304004 A JP 2003304004A JP 2002109556 A JP2002109556 A JP 2002109556A JP 2002109556 A JP2002109556 A JP 2002109556A JP 2003304004 A JP2003304004 A JP 2003304004A
- Authority
- JP
- Japan
- Prior art keywords
- chip
- optical transmission
- optical
- electronic device
- transmission chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、光デバイス部と電
子デバイス部とを単一のチップ基板上に構成した光伝送
チップ及びその取付構造に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical transmission chip in which an optical device section and an electronic device section are formed on a single chip substrate, and a mounting structure thereof.
【０００２】[0002]
【従来の技術】従来、光を媒介として高速通信を行うた
めの光伝送モジュール１は、図６に示すように、送信側
の光伝送チップ２と受信側の光伝送チップ３とで構成さ
れている。前記送信側の光伝送チップ２及び受信側の光
伝送チップ３は、共にガラスエポキシ等のチップ基板４
ａ，４ｂ上に光デバイス部７，１３と電子デバイス部１
０，１６をそれぞれ形成している。前記送信側の光デバ
イス部７は、発光ダイオード（ＬＥＤ５）及びこのＬＥ
Ｄ５の周囲を囲むように配設されている反射鏡６等を備
える一方、受信側の光デバイス部１３は、フォトダイオ
ード（ＰＤ１２）を備えている。また、送信側の電子デ
バイス部１０は、光を高速に伝送出力するための回路や
信号整形機能を有する増幅回路等を集積した集積回路
（ＩＣ８）及びコンデンサ等の受動部品９等を備え、一
方の受信側の電子デバイス部１６は、前記光伝送チップ
２から送出される信号を受信し、増幅や信号整形を行う
集積回路（ＩＣ１４）及びコンデンサ等の各種受動部品
１５等を備えている。そして、前記光デバイス部７，１
３及び電子デバイス部１０，１６を透明な樹脂体１１，
１７で封止している。2. Description of the Related Art Conventionally, as shown in FIG. 6, an optical transmission module 1 for performing high-speed communication through light is composed of an optical transmission chip 2 on the transmitting side and an optical transmission chip 3 on the receiving side. There is. The transmission side optical transmission chip 2 and the reception side optical transmission chip 3 are both chip substrates 4 made of glass epoxy or the like.
a, 4b on the optical device section 7, 13 and the electronic device section 1
0 and 16 are formed respectively. The optical device unit 7 on the transmitting side includes a light emitting diode (LED5) and the LE.
The reflecting mirror 6 and the like arranged so as to surround the periphery of D5 are provided, while the optical device unit 13 on the receiving side is provided with a photodiode (PD12). The electronic device section 10 on the transmission side includes an integrated circuit (IC8) in which a circuit for transmitting and outputting light at high speed, an amplifier circuit having a signal shaping function, and the like, a passive component 9 such as a capacitor, and the like are provided. The electronic device section 16 on the receiving side includes an integrated circuit (IC 14) that receives a signal transmitted from the optical transmission chip 2 and performs amplification and signal shaping, and various passive components 15 such as a capacitor. Then, the optical device units 7, 1
3 and the electronic device parts 10 and 16 are transparent resin bodies 11,
It is sealed with 17.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、従来の
光伝送モジュール１を構成する送信側の光伝送チップ２
及び受信側の光伝送チップ３にあっては、光デバイス部
７，１３及び電子デバイス部１０，１６が一枚のチップ
基板４ａ，４ｂ面上に配置されているため、広い実装ス
ペースを必要としていた。特に、光伝送スピードの向上
に伴ってチップ基板４ａ，４ｂ上に形成される光デバイ
ス部７，１３や電子デバイス部１０，１６の構成要素で
ある集積回路やその他の電子部品点数が増加し、サイズ
の大きなチップ基板４ａ，４ｂを用意しなければならな
くなる。このため、携帯情報機器のように小型化の要請
に適合できなくなるおそれがあった。However, the optical transmission chip 2 on the transmission side that constitutes the conventional optical transmission module 1 is used.
In the optical transmission chip 3 on the receiving side, since the optical device units 7 and 13 and the electronic device units 10 and 16 are arranged on the surfaces of the single chip substrates 4a and 4b, a large mounting space is required. I was there. In particular, as the optical transmission speed is improved, the number of integrated circuits and other electronic components, which are constituent elements of the optical device units 7 and 13 and the electronic device units 10 and 16 formed on the chip substrates 4a and 4b, increases, It becomes necessary to prepare large-sized chip substrates 4a and 4b. Therefore, there is a possibility that the portable information device cannot meet the demand for downsizing.
【０００４】そこで、本発明の第１の目的は、チップ基
板上に光デバイスや電子デバイスを効率よく配置するこ
とで、チップ基板の平面寸法を削減し、小型化する情報
通信機器に搭載できる光伝送チップを提供することであ
る。Therefore, a first object of the present invention is to efficiently arrange an optical device or an electronic device on a chip substrate to reduce the plane size of the chip substrate and to mount the optical device on an information communication apparatus which is miniaturized. It is to provide a transmission chip.
【０００５】また、本発明の第２の目的は、光伝送チッ
プを実装基板に取付けたときに、実装基板から突出する
高さができるだけ薄くなるような取付構造を提供するこ
とである。A second object of the present invention is to provide a mounting structure in which, when the optical transmission chip is mounted on a mounting board, the height of protrusion from the mounting board is as thin as possible.
【０００６】[0006]
【課題を解決するための手段】上記課題を解決するため
に、本発明の請求項１に係る光伝送チップは、チップ基
板と、このチップ基板の表面側に形成される光デバイス
部と、前記チップ基板の裏面側に形成される電子デバイ
ス部とを備えたことを特徴とする。In order to solve the above problems, an optical transmission chip according to claim 1 of the present invention comprises a chip substrate, an optical device portion formed on the front surface side of the chip substrate, and And an electronic device portion formed on the back surface side of the chip substrate.
【０００７】この発明によれば、チップ基板の表面側及
び裏面側に光デバイス部及び電子デバイス部を分けて実
装しているので、従来の同一面上に光デバイス部と電子
デバイス部とを混在させて実装していたものに比べて、
チップ基板のサイズを約半分以下に抑えることができ
る。このため、実装基板（マザーボード）上に設置する
面積が小さく抑えられ、小型の情報通信機器に搭載可能
となる。According to the present invention, since the optical device section and the electronic device section are separately mounted on the front surface side and the back surface side of the chip substrate, the conventional optical device section and the electronic device section are mixed on the same surface. Compared to what was implemented by
The size of the chip substrate can be reduced to about half or less. For this reason, the area to be installed on the mounting board (motherboard) can be suppressed to be small, and it can be mounted on a small information communication device.
【０００８】また、電子デバイス部をチップ基板の裏面
側に形成し、発光ダイオードやフォトダイオードのよう
な広角な指向性が要求される光デバイス部を表面側に形
成したので、光伝送効率が低下することなく送受信を行
うことができる。Further, since the electronic device portion is formed on the back surface side of the chip substrate and the optical device portion such as a light emitting diode or a photodiode which requires wide-angle directivity is formed on the front surface side, the light transmission efficiency is lowered. You can send and receive without doing.
【０００９】また、予め厚板状に形成されたチップ基板
の裏面側に大きめの凹部を設け、この凹部内に電子デバ
イス部を没入させることもできる。その場合にはチップ
基板の裏面を直接にマザーボードに実装できるので、光
デバイス部及び電子デバイス部をチップ基板に立体的に
実装することが容易となる。また、チップ基板の側面が
広くなっているので、チップ基板とマザーボードとを接
続させるための側面電極の形成が容易である。It is also possible to provide a large concave portion on the back surface side of the chip substrate formed in advance in the shape of a thick plate, and immerse the electronic device portion in this concave portion. In that case, since the back surface of the chip substrate can be directly mounted on the motherboard, it becomes easy to stereoscopically mount the optical device unit and the electronic device unit on the chip substrate. Further, since the side surface of the chip substrate is wide, it is easy to form the side surface electrode for connecting the chip substrate and the mother board.
【００１０】本発明の請求項５に係る光伝送チップの取
付構造は、光伝送チップの実装基板に電子デバイス部を
落とし込む孔部を設けておき、この孔部に電子デバイス
部を落とし込むと共に孔部の周囲にチップ基板の裏面を
当接保持させることで、薄型化に対応した実装が可能と
なる。In the mounting structure of the optical transmission chip according to the fifth aspect of the present invention, the mounting board of the optical transmission chip is provided with a hole portion for dropping the electronic device portion, and the electronic device portion is dropped into the hole portion and the hole portion. By making the back surface of the chip substrate contact and hold the periphery of the chip substrate, it becomes possible to mount the device corresponding to the reduction in thickness.
【００１１】[0011]
【発明の実施の形態】以下、添付図面に基づいて本発明
に係る光伝送チップの実施形態を詳細に説明する。図１
は本発明の送信側及び受信側の各光伝送チップの第１実
施形態を示す断面図であり、図２は前記送信側の光伝送
チップを示す斜視図である。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of an optical transmission chip according to the present invention will be described below in detail with reference to the accompanying drawings. Figure 1
2 is a cross-sectional view showing a first embodiment of each optical transmission chip on the transmitting side and the receiving side of the present invention, and FIG. 2 is a perspective view showing the optical transmission chip on the transmitting side.
【００１２】この実施形態に係る光伝送チップは、図１
（ａ）に示すように、発信機能を備えた送信側の光伝送
チップ２１と、図１（ｂ）に示すように、受信機能を備
えた受信側の光伝送チップ３１との二種類がある。前記
送信側の光伝送チップ２１は、チップ基板２２の表面２
２ａに光デバイス部２３、裏面２２ｂに電子デバイス部
２４を形成している。前記チップ基板２２は、ガラスエ
ポキシやＢＴレジン（Bismaleimide Triazine Resin）
等で形成され、その表面２２ａ及び裏面２２ｂにそれぞ
れの電極パターンが形成されている。前記光デバイス部
２３は、ボンディングワイヤ１９を介して前記電極パタ
ーンと接続される発光ダイオード（ＬＥＤ２６）と、こ
のＬＥＤ２６を囲むように配置された反射鏡２７と、コ
ンデンサ等の受動部品３０とを備えた構造となってい
る。電子デバイス部２４は、光を高速に伝送制御する送
信回路（ＩＣ２８）を中心として、コンデンサや抵抗等
の受動部品が配置されている。なお、前記チップ基板２
２の表面２２ａに実装されているＬＥＤ２６等とチップ
基板２２の裏面２２ｂに実装されているＩＣ２８等と
は、後述する側面電極２９を介して接続されている。な
お、前記光デバイス部２３及び電子デバイス部２４はそ
れぞれ樹脂体２５ａ，２５ｂで封止されるが、前記樹脂
体２５ａについては光透過性を損なわないように、透明
な樹脂材が使用される。The optical transmission chip according to this embodiment is shown in FIG.
As shown in FIG. 1A, there are two types: an optical transmission chip 21 on the transmitting side having a transmitting function and an optical transmission chip 31 on the receiving side having a receiving function as shown in FIG. 1B. . The optical transmission chip 21 on the transmission side is the surface 2 of the chip substrate 22.
An optical device section 23 is formed on 2a, and an electronic device section 24 is formed on the back surface 22b. The chip substrate 22 is made of glass epoxy or BT resin (Bismaleimide Triazine Resin).
Etc., and the respective electrode patterns are formed on the front surface 22a and the back surface 22b thereof. The optical device unit 23 includes a light emitting diode (LED 26) connected to the electrode pattern via a bonding wire 19, a reflecting mirror 27 arranged so as to surround the LED 26, and a passive component 30 such as a capacitor. It has a different structure. In the electronic device section 24, passive components such as capacitors and resistors are arranged around a transmission circuit (IC 28) that controls transmission of light at high speed. The chip substrate 2
The LED 26 and the like mounted on the front surface 22a of the second substrate 2 and the IC 28 and the like mounted on the back surface 22b of the chip substrate 22 are connected via a side surface electrode 29 described later. The optical device section 23 and the electronic device section 24 are sealed with resin bodies 25a and 25b, respectively, but a transparent resin material is used for the resin body 25a so as not to impair the light transmittance.
【００１３】前記光伝送チップ２１は、図２に示すよう
に、電子デバイス部２４を封止した樹脂体２５ｂの底面
をマザーボード２０上に載置し、チップ基板２２の側面
から樹脂体２５ｂの側面に沿って下方に延ばした側面電
極２９によってマザーボード２０上に形成されている電
極部１８と半田接合される。In the optical transmission chip 21, as shown in FIG. 2, the bottom surface of the resin body 25b encapsulating the electronic device portion 24 is placed on the mother board 20, and the side surface of the chip substrate 22 to the side surface of the resin body 25b. The side surface electrodes 29 extending downward along the solder joints are soldered to the electrode portions 18 formed on the mother board 20.
【００１４】図１（ｂ）は前記送信側の光伝送チップ２
１から送出された光による情報を受け取る受信側の光伝
送チップ３１の構造を示したものである。電極パターン
が形成されたチップ基板３２の表面３２ａにフォトダイ
オード（ＰＤ３６）を備えた光デバイス部３３を形成
し、裏面３２ｂには前記光デバイス部３３で受信する光
情報を格納及び処理する受信回路（ＩＣ３８）を備えた
電子デバイス部３４が形成されている。その他の構成要
素は前記送信側の光伝送チップ２１と同様であり、マザ
ーボード２０の電極部１８との電気的接合も前記図２と
同様にチップ基板３２の下方に延びる側面電極３９を介
して行われる。FIG. 1B shows the optical transmission chip 2 on the transmitting side.
1 shows the structure of an optical transmission chip 31 on the receiving side which receives information by the light transmitted from the optical fiber 1. An optical device unit 33 having a photodiode (PD36) is formed on the front surface 32a of the chip substrate 32 on which the electrode pattern is formed, and a rear surface 32b stores and processes optical information received by the optical device unit 33. An electronic device section 34 including (IC38) is formed. Other components are similar to those of the optical transmission chip 21 on the transmission side, and electrical connection with the electrode portion 18 of the mother board 20 is also performed via the side surface electrode 39 extending below the chip substrate 32 as in FIG. Be seen.
【００１５】上記図１及び図２に示された構造の光伝送
チップ２１，３１によれば、光デバイス部２３，３３と
電子デバイス部２４，３４とを分けてチップ基板２２，
３２の表面２２ａ，３２ａ及び裏面２２ｂ，３２ｂに形
成しているので、チップ基板２２，３２の平面サイズを
従来の略半分以下に小さくすることができる。このた
め、小型の情報通信機器等にも搭載可能となる。また、
光デバイス部２３，３３をチップ基板２２，３２の表面
２２ａ，３２ａ側に形成しているので、発光及び受光面
積が広く取れて、光伝送効率を低下させることがない。
このような構造からなる光伝送チップ２１，３１をマザ
ーボード２０に実装する場合は、チップ基板２２の側面
から電子デバイス部２４の樹脂体２５ｂの側面に繋がる
側面電極２９を形成することで容易となる。なお、前記
光デバイス部２３，３３の樹脂体２５ａ，３５ａの表面
には集光性を高めるための凸レンズ部３７が形成されて
いる。According to the optical transmission chips 21 and 31 having the structures shown in FIGS. 1 and 2, the optical device sections 23 and 33 and the electronic device sections 24 and 34 are divided into the chip substrates 22,
Since it is formed on the front surface 22a, 32a and the back surface 22b, 32b of 32, the plane size of the chip substrates 22, 32 can be reduced to about half or less of the conventional size. Therefore, it can be mounted on a small information communication device or the like. Also,
Since the optical device portions 23 and 33 are formed on the surfaces 22a and 32a of the chip substrates 22 and 32, the light emitting and light receiving areas can be wide and the light transmission efficiency is not reduced.
When the optical transmission chips 21 and 31 having such a structure are mounted on the mother board 20, it is easy to form the side electrodes 29 that connect the side surfaces of the chip substrate 22 to the side surfaces of the resin body 25b of the electronic device section 24. . A convex lens portion 37 is formed on the surfaces of the resin bodies 25a and 35a of the optical device portions 23 and 33 to enhance the light-collecting property.
【００１６】図３は本発明の第２実施形態に係る光伝送
チップ４１を示したものである。この光伝送チップ４１
は、厚板状に形成されたチップ基板４２の裏面の略中央
部に大きな凹部５０を形成し、この凹部５０内に電子デ
バイス部４４を没入させた状態で形成すると共に、凹部
５０の周縁部の裏面４２ｂをマザーボード２０の上面に
当接させて直接保持させた構造となっている。前記凹部
５０は厚く形成されたチップ基板４２の裏面を切削する
か、あるいは成形金型等を用いて一体形成される。この
ようにして形成されたチップ基板４２の凹部５０内には
ＩＣ４８やその他の受動部品類が実装され、その上を樹
脂体４５ｂで封止することによって電子デバイス部４４
が形成される。樹脂体４５ｂの上面はチップ基板４２の
裏面４２ｂと同一面にしてある。一方、チップ基板４２
の表面４２ａには前記第１実施形態の光伝送チップ２
１，３１と同様に、ＬＥＤ４６や反射鏡４７、コンデン
サ等の受動部品４９が実装され、その上方を樹脂体４５
ａで封止することによって光デバイス部４３が形成され
る。また、図４に示すように、チップ基板４２の左右両
側部にはスルーホールを含む側面電極５１が形成されて
いる。FIG. 3 shows an optical transmission chip 41 according to the second embodiment of the present invention. This optical transmission chip 41
Is formed in a state where a large recess 50 is formed substantially in the center of the back surface of the chip substrate 42 formed in the shape of a thick plate, the electronic device portion 44 is immersed in the recess 50, and the peripheral edge of the recess 50 is formed. The back surface 42b is brought into contact with the upper surface of the mother board 20 and directly held. The recess 50 is formed integrally by cutting the back surface of the thick chip substrate 42 or using a molding die or the like. The IC 48 and other passive components are mounted in the recess 50 of the chip substrate 42 thus formed, and the electronic device unit 44 is sealed by sealing the IC 48 and other passive components thereon with the resin body 45b.
Is formed. The upper surface of the resin body 45b is flush with the back surface 42b of the chip substrate 42. On the other hand, the chip substrate 42
On the surface 42a of the optical transmission chip 2 of the first embodiment.
As in the case of Nos. 1 and 31, a passive component 49 such as an LED 46, a reflecting mirror 47, and a capacitor is mounted, and a resin body 45 is provided above the passive component 49.
The optical device unit 43 is formed by sealing with a. Further, as shown in FIG. 4, side electrodes 51 including through holes are formed on both left and right sides of the chip substrate 42.
【００１７】前記構成の光伝送チップ４１をマザーボー
ド２０に実装する場合には、チップ基板４２の裏面４２
ｂをマザーボード２０の所定箇所に載置し、マザーボー
ド２０に設けられている電極部５３と前記チップ基板４
２の側面電極５１とを半田接合することによって行われ
る。上記説明した光伝送チップ４１は送信側の構成であ
るが、これとセットで用いられる受信側の光伝送チップ
（図示せず）の構成も略同様であり、ＬＥＤ４６や反射
鏡４７がフォトダイオード（ＰＤ）に置き換わった構成
となる。When the optical transmission chip 41 having the above structure is mounted on the mother board 20, the back surface 42 of the chip substrate 42 is mounted.
b is placed at a predetermined position on the mother board 20, and the electrode portion 53 provided on the mother board 20 and the chip substrate 4
This is performed by soldering the second side surface electrode 51. Although the optical transmission chip 41 described above has a configuration on the transmission side, the configuration of a reception side optical transmission chip (not shown) used as a set with this is also substantially the same, and the LED 46 and the reflecting mirror 47 include the photodiode ( PD).
【００１８】図５は本発明の第３実施形態に係る光伝送
チップ６１の構成及び取付構造を示したものである。こ
の光伝送チップ６１は、チップ基板６２に対して表面側
の光デバイス部６３及び裏面側の電子デバイス部６４を
小さ目に形成し、チップ基板の６２の外周部を露出させ
た構成となっている。また、光伝送チップ６１を実装す
るマザーボード２０には前記電子デバイス部６４の樹脂
体６５ｂが嵌り込む孔部６９が開設されている。さら
に、チップ基板６２に設けられる光デバイス部６３及び
電子デバイス部６４の外部電極７０は、チップ基板６２
の裏面６２ｂにも回り込むようにして設けられている。
このような構成からなる光伝送チップ６１は、電子デバ
イス部６４の樹脂体６５ｂをマザーボード２０に開設さ
れた孔部６９に落とし込み、チップ基板６２の裏面６２
ｂを前記孔部６９の外周縁に当接保持し、マザーボード
２０に設けられている電極部７１と前記チップ基板６２
の外部電極７０とを半田接合して実装される。このよう
な取付構造によって、光デバイス部６３がマザーボード
２０から突出する高さを極力抑えることができ、薄型の
情報通信機器等にも搭載可能となると共に、チップ基板
６２に安定した状態で実装できる。なお、マザーボード
２０に開設される孔部６９は、電子デバイス部６４の形
状や大きさによって適宜設定される。FIG. 5 shows the structure and mounting structure of the optical transmission chip 61 according to the third embodiment of the present invention. In this optical transmission chip 61, an optical device portion 63 on the front surface side and an electronic device portion 64 on the rear surface side are formed smaller than a chip substrate 62, and the outer peripheral portion of the chip substrate 62 is exposed. . Further, the motherboard 20 on which the optical transmission chip 61 is mounted is provided with a hole portion 69 into which the resin body 65b of the electronic device portion 64 is fitted. Further, the external electrodes 70 of the optical device section 63 and the electronic device section 64 provided on the chip substrate 62 are provided on the chip substrate 62.
It is also provided so as to wrap around the back surface 62b of the.
In the optical transmission chip 61 having such a configuration, the resin body 65b of the electronic device portion 64 is dropped into the hole portion 69 formed in the motherboard 20, and the back surface 62 of the chip substrate 62 is formed.
b is held in contact with the outer peripheral edge of the hole portion 69, and the electrode portion 71 and the chip substrate 62 provided on the mother board 20 are held.
The external electrodes 70 are mounted by soldering. With such a mounting structure, the height at which the optical device portion 63 projects from the motherboard 20 can be suppressed as much as possible, and the optical device portion 63 can be mounted on a thin information communication device or the like and can be mounted on the chip substrate 62 in a stable state. . The hole 69 formed in the mother board 20 is appropriately set according to the shape and size of the electronic device section 64.
【００１９】[0019]
【発明の効果】以上説明したように、本発明に係る光伝
送チップによれば、一枚のチップ基板の表裏両面を使用
して発光ダイオードやフォトダイオード等を備えた光デ
バイス部及びＩＣやその他の受動部品からなる電子デバ
イス部を立体的に実装しているので、チップ基板サイズ
の小型化が実現できる。このため、前記光伝送チップを
マザーボード等の実装基板に実装する際の占有面積が小
さく抑えられる。As described above, according to the optical transmission chip of the present invention, the optical device section and the IC including the light emitting diode, the photodiode and the like are formed by using both front and back surfaces of one chip substrate. Since the electronic device section including the passive components is mounted three-dimensionally, the chip substrate size can be reduced. Therefore, the area occupied when the optical transmission chip is mounted on a mounting substrate such as a mother board can be kept small.
【００２０】また、前記チップ基板の表面に発光ダイオ
ードやフォトダイオードのような光デバイス部を形成し
ているので、透光性が十分確保でき、光伝送効率が低下
することがない。Further, since the optical device portion such as the light emitting diode or the photodiode is formed on the surface of the chip substrate, the light transmitting property can be sufficiently ensured and the light transmission efficiency is not lowered.
【００２１】さらに、本発明に係る光伝送チップの取付
構造によれば、光伝送チップの実装基板に電子デバイス
部を落とし込む孔部を設け、この孔部に電子デバイス部
を落とし込むようにして実装したので、光デバイス部が
実装基板から突出する高さを極力抑えることができ、薄
型化に対応した実装が可能となった。Further, according to the mounting structure of the optical transmission chip of the present invention, the mounting board of the optical transmission chip is provided with the hole portion into which the electronic device portion is dropped, and the electronic device portion is dropped into the mounting portion. Therefore, the height at which the optical device section protrudes from the mounting substrate can be suppressed as much as possible, and the mounting corresponding to the reduction in thickness has become possible.
【図１】本発明に係る送信側及び受信側の光伝送チップ
の第１実施形態の断面図である。FIG. 1 is a sectional view of a first embodiment of an optical transmission chip on a transmitting side and a receiving side according to the present invention.
【図２】上記図１の送信側の光伝送チップの斜視図であ
る。FIG. 2 is a perspective view of the transmission-side optical transmission chip of FIG.
【図３】本発明に係る送信側の光伝送チップの第２実施
形態の断面図である。FIG. 3 is a cross-sectional view of a second embodiment of a transmission-side optical transmission chip according to the present invention.
【図４】上記図３の送信側の光伝送チップの斜視図であ
る。FIG. 4 is a perspective view of an optical transmission chip on the transmission side of FIG.
【図５】本発明に係る送信側の光伝送チップの第３実施
形態の断面図である。FIG. 5 is a cross-sectional view of a third embodiment of the transmission-side optical transmission chip according to the present invention.
【図６】従来の送信側及び受信側の光伝送チップの断面
図である。FIG. 6 is a cross-sectional view of a conventional transmission-side and reception-side optical transmission chip.
２０ マザーボード ２１，３１，４１，６１ 光伝送チップ ２２，３２，４２，６２ チップ基板 ２２ａ，３２ａ 表面 ２２ｂ，３２ｂ 裏面 ２３，３３，４３，６３ 光デバイス部 ２４，３４，４４，６４ 電子デバイス部 ２６，４６，６６ ＬＥＤ（発光ダイオード） ３６ ＰＤ（フォトダイオード） ２８，３８，４８，６８ ＩＣ ２９，３９，５１ 側面電極 ５０ 凹部 ６９ 孔部 20 motherboard 21, 31, 41, 61 Optical transmission chip 22, 32, 42, 62 Chip substrate 22a, 32a surface 22b, 32b back side 23, 33, 43, 63 Optical device section 24, 34, 44, 64 Electronic device section 26,46,66 LED (light emitting diode) 36 PD (photodiode) 28,38,48,68 IC 29, 39, 51 Side electrode 50 recesses 69 hole
Claims (5)
に形成される光デバイス部と、前記チップ基板の裏面側
に形成される電子デバイス部とを備えたことを特徴とす
る光伝送チップ。1. An optical transmission chip comprising a chip substrate, an optical device portion formed on a front surface side of the chip substrate, and an electronic device portion formed on a rear surface side of the chip substrate.
れた発光ダイオードを備えた光送信部材で構成されてい
る請求項１記載の光伝送チップ。2. The optical transmission chip according to claim 1, wherein the optical device section includes an optical transmission member including a light emitting diode surrounded by a reflecting mirror.
を備えた光受信部材で構成されている請求項１記載の光
伝送チップ。3. The optical transmission chip according to claim 1, wherein the optical device section includes an optical receiving member including a photodiode.
面に形成された凹部内に没入された状態で形成されてな
る請求項１記載の光伝送チップ。4. The optical transmission chip according to claim 1, wherein the electronic device portion is formed in a recessed state formed on the back surface of the chip substrate.
ための実装基板に孔部を開設し、この孔部に光伝送チッ
プの電子デバイス部を落とし込むと共に孔部の周囲にチ
ップ基板の裏面を当接保持させてなる光伝送チップの取
付構造。5. A hole is formed in a mounting substrate for mounting the optical transmission chip according to claim 1, the electronic device portion of the optical transmission chip is dropped into the hole, and the back surface of the chip substrate is provided around the hole. Mounting structure for optical transmission chips that are held in contact with each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002109556A JP2003304004A (en) | 2002-04-11 | 2002-04-11 | Optical transmission chip and mounting structure thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002109556A JP2003304004A (en) | 2002-04-11 | 2002-04-11 | Optical transmission chip and mounting structure thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003304004A true JP2003304004A (en) | 2003-10-24 |
Family
ID=29392986
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002109556A Pending JP2003304004A (en) | 2002-04-11 | 2002-04-11 | Optical transmission chip and mounting structure thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003304004A (en) |
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| WO2005083805A1 (en) * | 2004-02-26 | 2005-09-09 | Matsushita Electric Industrial Co., Ltd. | Led light source |
| JP2006049443A (en) * | 2004-08-02 | 2006-02-16 | Citizen Electronics Co Ltd | Light emitting device and its mounting structure |
| KR100638876B1 (en) | 2005-07-22 | 2006-10-27 | 삼성전기주식회사 | Side view led with improved arrangement of protection device |
| JP2009064833A (en) * | 2007-09-04 | 2009-03-26 | Toshiba Lighting & Technology Corp | Light-emitting device and lighting device with the same |
| WO2013084437A1 (en) * | 2011-12-09 | 2013-06-13 | 日本特殊陶業株式会社 | Wiring board for having light emitting element mounted thereon |
| WO2015111376A1 (en) * | 2014-01-23 | 2015-07-30 | 株式会社デンソー | Molded package |
| JP2016091023A (en) * | 2014-11-06 | 2016-05-23 | 新科實業有限公司ＳＡＥ Ｍａｇｎｅｔｉｃｓ（Ｈ．Ｋ．）Ｌｔｄ． | Wafer-level packaged optical sub-assembly and transmission/reception module having the same |
| WO2018110381A1 (en) * | 2016-12-12 | 2018-06-21 | 株式会社村田製作所 | Electronic module |
| CN108281395A (en) * | 2018-02-26 | 2018-07-13 | 苏州雷霆光电科技有限公司 | A kind of patch-type IRM high shielding constructions and its manufacture craft |
| CN110858584A (en) * | 2018-08-23 | 2020-03-03 | 弘凯光电(深圳)有限公司 | Light emitting module and light emitting serial device |
| US11469220B2 (en) * | 2018-01-17 | 2022-10-11 | Osram Oled Gmbh | Component and method for producing a component |
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| WO2018110381A1 (en) * | 2016-12-12 | 2018-06-21 | 株式会社村田製作所 | Electronic module |
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| US11469220B2 (en) * | 2018-01-17 | 2022-10-11 | Osram Oled Gmbh | Component and method for producing a component |
| CN108281395A (en) * | 2018-02-26 | 2018-07-13 | 苏州雷霆光电科技有限公司 | A kind of patch-type IRM high shielding constructions and its manufacture craft |
| CN110858584A (en) * | 2018-08-23 | 2020-03-03 | 弘凯光电(深圳)有限公司 | Light emitting module and light emitting serial device |
| EP3614428A3 (en) * | 2018-08-23 | 2020-08-05 | Brightek Optoelectronic (Shenzhen) Co., Ltd. | Light-emitting module and tandem light-emitting device |
| US10923461B2 (en) | 2018-08-23 | 2021-02-16 | Brightek Optoelectronic (Shenzhen) Co., Ltd. | Light-emitting module and tandem light-emitting device |
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