JP2003303946A5 - - Google Patents
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- JP2003303946A5 JP2003303946A5 JP2002110071A JP2002110071A JP2003303946A5 JP 2003303946 A5 JP2003303946 A5 JP 2003303946A5 JP 2002110071 A JP2002110071 A JP 2002110071A JP 2002110071 A JP2002110071 A JP 2002110071A JP 2003303946 A5 JP2003303946 A5 JP 2003303946A5
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- JP
- Japan
- Prior art keywords
- solid
- state imaging
- transparent substrate
- imaging device
- extraction electrode
- Prior art date
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Claims (8)
素子形成面において画素部の周囲に所定の高さの突起状の接続電極が形成され、前記取り出し電極の前記素子接続領域と前記接続電極とが電気的かつ機械的に接続するように、前記素子形成面を前記透明基板に向けて前記透明基板上に実装された固体撮像素子と、
前記取り出し電極の前記素子接続領域および前記接続電極を取り囲むように前記透明基板と前記固体撮像素子の間に挟まれて形成され、前記固体撮像素子の前記素子形成面を気密封止するシール部材と
を有する固体撮像装置。A transparent substrate on which an extraction electrode having an element connection region and an external connection region is formed;
The element is formed such that a projecting connection electrode having a predetermined height is formed around the pixel portion on the element formation surface, and the element connection region of the extraction electrode and the connection electrode are electrically and mechanically connected. A solid-state imaging device mounted on the transparent substrate with the formation surface facing the transparent substrate;
A sealing member formed between the transparent substrate and the solid-state imaging element so as to surround the element connection region of the extraction electrode and the connection electrode, and hermetically sealing the element formation surface of the solid-state imaging element; A solid-state imaging device.
請求項1記載の固体撮像装置。The solid-state imaging device according to claim 1, wherein the element connection region of the extraction electrode and the connection electrode are directly joined and electrically and mechanically connected.
請求項1記載の固体撮像装置。The solid-state imaging device according to claim 1, wherein the connection electrode and the element connection region of the extraction electrode are joined by a conductive resin to be electrically and mechanically connected.
請求項1記載の固体撮像装置。The solid-state imaging device according to claim 1, wherein the seal member includes a spacer member having a diameter that can define a distance between the solid-state imaging element and the transparent substrate.
請求項1記載の固体撮像装置。A wiring for connecting to the extraction electrode is further formed on the transparent substrate, and further includes another electronic element mounted on the transparent substrate so as to be electrically and mechanically connected to the wiring. The solid-state imaging device according to claim 1.
透明基板に素子接続領域および外部接続領域を有する取り出し電極を形成する工程と、
前記固体撮像素子の前記素子形成面と前記透明基板を対向させ、前記透明基板と前記固体撮像素子との間に、前記取り出し電極の前記素子接続領域および前記接続電極を取り囲むシール部材を挟んだ状態で、前記取り出し電極の前記素子接続領域と前記接続電極とが電気的かつ機械的に接続するように、前記透明基板上に前記固体撮像素子を実装する工程と
を有する固体撮像装置の製造方法。Production of a solid-state imaging device having a solid-state imaging device in which protruding connection electrodes having a predetermined height are formed around the pixel portion on the element-forming surface, and wherein the element-forming surface of the solid-state imaging device is hermetically sealed A method,
Forming an extraction electrode having an element connection region and an external connection region on a transparent substrate;
The element forming surface of the solid-state image sensor and the transparent substrate are opposed to each other, and a seal member surrounding the element connection region of the extraction electrode and the connection electrode is sandwiched between the transparent substrate and the solid-state image sensor. And mounting the solid-state imaging device on the transparent substrate so that the element connection region of the extraction electrode and the connection electrode are electrically and mechanically connected to each other.
請求項6記載の固体撮像装置の製造方法。After the step of mounting the solid-state imaging device on the transparent substrate, the solid-state imaging is performed by electrically and mechanically connecting the external connection region of the extraction electrode and the connection terminal of the mounting substrate via a conductive wire. The manufacturing method of the solid-state imaging device according to claim 6, further comprising a step of attaching the transparent substrate on which an element is mounted on the mounting substrate.
前記透明基板上に前記固体撮像素子を実装する工程の前に、前記透明基板上に、前記配線に電気的かつ機械的に接続するように他の電子素子を実装する工程をさらに有する
請求項6記載の固体撮像装置の製造方法。In the step of forming the extraction electrode on the transparent substrate, a wiring connected to the extraction electrode is further formed,
The method further includes a step of mounting another electronic device on the transparent substrate so as to be electrically and mechanically connected to the wiring before the step of mounting the solid-state imaging device on the transparent substrate. The manufacturing method of the solid-state imaging device of description.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002110071A JP2003303946A (en) | 2002-04-12 | 2002-04-12 | Solid-state image pickup device and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002110071A JP2003303946A (en) | 2002-04-12 | 2002-04-12 | Solid-state image pickup device and manufacturing method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2003303946A JP2003303946A (en) | 2003-10-24 |
JP2003303946A5 true JP2003303946A5 (en) | 2005-09-08 |
Family
ID=29393322
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002110071A Pending JP2003303946A (en) | 2002-04-12 | 2002-04-12 | Solid-state image pickup device and manufacturing method thereof |
Country Status (1)
Country | Link |
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JP (1) | JP2003303946A (en) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005268567A (en) * | 2004-03-19 | 2005-09-29 | Matsushita Electric Ind Co Ltd | Substrate and its manufacturing method |
TWI273682B (en) * | 2004-10-08 | 2007-02-11 | Epworks Co Ltd | Method for manufacturing wafer level chip scale package using redistribution substrate |
JP4196937B2 (en) * | 2004-11-22 | 2008-12-17 | パナソニック株式会社 | Optical device |
TWI289365B (en) * | 2005-09-29 | 2007-11-01 | Visera Technologies Co Ltd | Wafer scale image module |
JP5186295B2 (en) * | 2008-06-30 | 2013-04-17 | 富士フイルム株式会社 | Imaging module, method for manufacturing the same, and endoscope apparatus |
JP5187148B2 (en) * | 2008-11-12 | 2013-04-24 | 富士通株式会社 | Semiconductor device and manufacturing method thereof |
JP5493767B2 (en) * | 2009-11-25 | 2014-05-14 | 大日本印刷株式会社 | Sensor unit and manufacturing method thereof |
JP5676155B2 (en) * | 2010-06-23 | 2015-02-25 | 日立アロカメディカル株式会社 | Radiation detector manufacturing method and radiation detector |
JP2012124318A (en) * | 2010-12-08 | 2012-06-28 | Sony Corp | Method of manufacturing solid state imaging device, solid state image sensor, and electronic apparatus |
JP5706357B2 (en) * | 2012-02-24 | 2015-04-22 | 富士フイルム株式会社 | Substrate module and manufacturing method thereof |
WO2020039733A1 (en) * | 2018-08-21 | 2020-02-27 | ソニーセミコンダクタソリューションズ株式会社 | Semiconductor device, electronic apparatus, and method for manufacturing semiconductor device |
JP7362280B2 (en) | 2019-03-22 | 2023-10-17 | キヤノン株式会社 | Manufacturing method of package unit, package unit, electronic module, and equipment |
JP7160865B2 (en) | 2020-07-16 | 2022-10-25 | ソニー・オリンパスメディカルソリューションズ株式会社 | Medical camera head and medical camera device |
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2002
- 2002-04-12 JP JP2002110071A patent/JP2003303946A/en active Pending
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