JP2003298166A - Light path converter and optical module using it - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To easily and speedily provide a light path converter which has a surface exhibiting a high flatness as a light reflecting surface or a device mounting surface and to further provide a high-reliability optical module by which the efficiency of optical connection between a plane emitting element and a light transmitter can be increased. <P>SOLUTION: The optical module M1 has a substrate 1 which is provided with a lower surface 1a and a higher surface at different levels. The lower surface 1a is provided with the plane emitting element 3 and the light path converter 2 for reflecting the outgoing light L1 from the plane emitting element 3 at a specified angle. The light transmitter 4 composed of an optical fiber or other light guiding materials for making the reflection L2 from the light path converter 2 enter an extremity 4a is provided in a groove 1b for mounting which is formed in the higher surface and has a V-shaped cross-section. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical path changing body used in the fields of optical communication and optical information communication, and an optical module using the same.

[0002]

BACKGROUND OF THE INVENTION In a surface mount type optical transmission module, a surface emitting laser (Ve) having excellent operating current and temperature characteristics is used.
vertical Cavity Surface Emi
toting Laser (hereinafter also referred to as VCSEL)
It is possible to change the optical path of the emitted light of (3) by the reflecting surface of the base body having a predetermined shape, and easily make an optical connection to an optical element such as an optical fiber. In addition, by mounting the light receiving element on the surface of the base that serves as the reflection surface, it becomes easy to monitor the output of the VCSEL.

By the way, when the above-mentioned optical path changing body is formed of single crystal silicon which is preferably used as a substrate of an optical transmission module, the reflection of the optical path changing body is disclosed in, for example, Japanese Patent Laid-Open No. 11-112014. By forming the surface by anisotropic etching of the substrate, a flat anti-slope can be manufactured with high accuracy.

However, in order to highly accurately form a flat anti-slope surface by anisotropic etching, a substrate with a small amount of impurities must be selected, and the manufacturing method therefor is limited and the cost is high. That is, a high-cost single crystal silicon substrate manufactured by, for example, the FZ (floating zone) method is selected. This is for example CZ
This is because the silicon substrate manufactured by a relatively inexpensive method such as the (Choralski) method is likely to have defects in the crystal due to the inclusion of impurities in the manufacturing process. Such defects form pits on the etched surface during anisotropic etching, and a flat anti-slope cannot be produced.

Even when the single crystal silicon substrate manufactured by the FZ method is used, the etching conditions must be optimized in order to manufacture a flat anti-slope surface with high accuracy. Is not easy.

Further, when the anisotropic etching technique is used, it is necessary to limit the plane orientation and off-angle of the substrate different from the generally used single crystal silicon substrate, which leads to high cost.

In order to form the reflecting surface of the optical path changing body, anisotropic etching is performed for a long time, and if the surface is not a wide inclined surface formed in a deep groove, that is, a reflecting surface, the height of the optical path changing body is increased. The function of the optical path changing body will be insufficient unless it is accurately designed and manufactured.

When an optical semiconductor element such as a light receiving element is mounted by using the above-mentioned optical path changing body, it is mounted on a surface formed by anisotropic etching. This surface is the surface of the substrate. However, since it is inclined, it is difficult to mount a large number of optical semiconductor elements with high accuracy.

Further, when the optical path changing body is mounted on the mounting board, pressure and close contact are made when mounting the optical path changing body on the mounting board. Therefore, the edge portion of the optical path changing body is connected to the light receiving element. There is a problem that the electrode wiring may be broken.

In addition, LD (laser diode) and PD
Since an optical path changer larger than the (photodiode) subcarrier is mounted on the mounting board, the adhesion force with the mounting board becomes insufficient under the conventional die bonding conditions, and the optical path changer may come off. was there.

Further, for example, JP-A-11-121863.
The optical path changing body having a projecting upper surface disclosed in
A collet that sucks a flat surface to operate the main body has poor operability, and it is difficult to apply pressure and adhere to the mounting board.

Therefore, in the present invention, the above problems are solved,
An object of the present invention is to provide a highly reliable optical module that can easily and quickly provide an optical path changing body and can highly efficiently perform optical connection between a surface emitting element and an optical transmission body.

[0013]

In order to achieve the above object, an optical path changing body of the present invention is an optical path changing body for optical communication for reflecting light emitted from a surface light emitting device, The installation surface and the back surface of the installation surface are formed substantially parallel to each other, and one side surface of the main body is used as a light reflection surface of the surface light emitting element, and an angle formed by the light reflection surface and the installation surface is 133 ° to.
It is characterized in that it is 137 °. In particular, the light reflecting surface is a polished smooth silicon single crystal surface.

Particularly, the upper and lower surfaces of the columnar main body (the installation surface of the main body and the back surface of the installation surface) are formed by dicing, and the surface roughness Ra (arithmetic mean roughness) is 1000.
Å to 5000Å, the light reflecting surface is used as an element mounting surface, and a light receiving element is disposed on this surface, and an ohmic contact is provided between the installation surface of the main body and the element mounting surface. An impurity diffusion region is formed.

Further, the method of manufacturing the optical path changing body of the present invention comprises:
The step of forming a columnar portion having a parallelogram-shaped cross section by forming a plurality of V-grooves alternately located on both main surfaces of the single crystal wafer, and including a polished smooth single crystal of a columnar main body A part of the surface of the substrate is used as a light reflecting surface for changing the optical path of incident light in a predetermined direction or an element disposition surface on which an optical semiconductor element is provided.

Further, the optical module of the present invention includes a surface light emitting element and an optical path changing body for reflecting the light emitted from the surface light emitting element on the lower position surface of the substrate on which the low position surface and the high position surface having a height difference are formed. Along with the arrangement, an optical transmission body that makes reflected light from the optical path changing body incident on the high position surface is arranged.

Further, in particular, a light receiving element is arranged in the optical path changing body, and the light receiving element receives light emitted from the surface light emitting element and reflects a part of the emitted light to enter the light transmitting body. The feature is that it is made to do.

[0018]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, an example of an embodiment according to the present invention will be described in detail with reference to the drawings schematically showing.

FIG. 1 shows a sectional view of an optical module M1 of the present invention. The optical module M1 has a low position surface 1 having a height difference.
a surface emitting element 3 and an optical path changing body 2 for reflecting the emitted light L1 of the surface emitting element 3 are respectively arranged on the low surface 1a of the substrate 1 on which a and the high surface are formed, and are formed on the high surface. Mounting groove 1b having a V-shaped cross section orthogonal to the optical axis
In addition, the optical transmission body 4 including an optical fiber or other optical waveguide body for allowing the reflected light L2 from the optical path changing body 2 to enter the tip 4a is provided.

Here, the optical path changing body 2 is in the form of a column whose upper and lower two principal surfaces are parallel to each other. That is, the installation surface (lower surface) 2b of the main body
And a rear surface (upper surface) 2a of the installation surface are formed substantially parallel to each other, and one side surface of the main body serves as a light reflecting surface (hereinafter, also referred to as an inclined surface) 2c of the surface light emitting element 3, and the inclined surface and the lower surface 2b.
The angle α formed by is set to 133 ° to 137 °. The upper and lower surfaces 2a and 2b of the main body are formed by dicing. Further, the inclined surface 2c, which is the surface of the polished smooth silicon single crystal substrate, has a light reflecting surface for converting the incident light L1 from the surface light emitting element 3 into a predetermined direction or an optical semiconductor element such as a light receiving element. Is used as an element disposition surface for disposing.

In this optical path changing body 2, in particular, the main body is made of single crystal silicon, and the inclined surface 2c is a surface inclined by 43 ° to 47 ° from the surface of the single crystal substrate (α = 133 ° to 137).
Angle), the light emitted from the surface light emitting element 3 in a substantially vertical direction is subjected to an optical path change at an angle of 86 ° to 94 ° by the inclined surface 2c of the optical path changing body 2 and arranged horizontally (in a substantially horizontal direction). The light can be incident on the optical transmission body 4 thus formed, and the optical connection can be made efficiently. Thus, in consideration of the aperture ratio of the optical fiber, the light reflecting surface is preferably formed so as to change the optical path of the incident light at an angle of 90 ± 4 °.

The optical path changing body 2 is manufactured as follows. First, as shown in the plan view of FIG. 2 and the sectional view taken along the line AA ′ of FIG.
4 is machined by dicing using a line formed by a predetermined photoresist 11 as a marker and using a V-shaped grindstone having a tip angle of 90 °. The V grooves 12 that are alternately positioned are formed in a plurality of lines in a predetermined direction. As a result, the columnar portions 13 formed on both sides of the V groove 12 and having a parallelogram-shaped cross section are formed.

Since the inclined surface 2c of the optical path changing body 2 is a light reflecting surface or a surface on which optical semiconductor elements are arranged with high accuracy, one main surface 10 of the single crystal wafer is MCP (mechanochemical polish). ) Is used to polish to a mirror surface (arithmetic mean roughness Ra is 100 Å or less).

Next, the line D shown on both sides of the columnar portion 14
The individual columnar portions 14 are separated by dicing in. In addition, in FIG. 3, θ is 44.0 ° ± 1.
It becomes 0 ° or 46.0 ° ± 1.0 °. In dicing using a V-shaped grindstone whose tip has an angle of 90 °,
This is because θ has a width of ± 1.0 ° depending on the accuracy of the grindstone and the processing accuracy of the machine. In addition, the central value of θ is 44.0 °
Alternatively, 46.0 ° is set so that when a light ray is incident perpendicularly to the optical axis of the optical fiber, the reflected return light is generated in the same path as the incident light, and the return light is reflected on the VCSEL surface and again. The purpose is to prevent coupling to the optical fiber. When the coupling efficiency of such return light with the optical fiber is high, the characteristics of the optical module are significantly deteriorated. In particular, when the transmission speed is high, it is necessary to make such reflected light sufficiently small.

A part of the polished smooth silicon single crystal substrate surface of the columnar body thus obtained is used as a light reflecting surface for changing the optical path of incident light in a predetermined direction, or an optical semiconductor element. The surface on which the element is provided is provided.

The surface emitting element 3 uses, for example, a VCSEL, but any surface emitting element having a shape that emits light in the direction normal to the surface of the mounting substrate can be applied.

The optical transmission body 4 may be an optical waveguide body of various shapes or an optical waveguide formed directly on the substrate 1 in addition to the optical fiber.

Thus, the inclined surface formed by the anisotropic etching technique is not used as the inclined surface for light reflection, but one main surface of the wafer polished on one side is used as the light reflection surface or the element disposition surface of the optical semiconductor element. Therefore, it is possible to provide an excellent optical path changing body having a light reflecting surface (or element arrangement surface) having excellent flatness.

Further, the surface 2 of the optical path changing body 2 in contact with the substrate 1
As for b, as a result of the dicing process, the arithmetic mean roughness Ra of the surface of the slope becomes about 1000Å to 5000Å, which is more than 10 times larger than the arithmetic mean roughness Ra of the polished substrate surface.
Therefore, the area in contact with the solder film is large, the adhesive force is large, and an optical module with high reliability can be manufactured.

Further, since the optical path changing body can be manufactured at once by the wafer process, it can be manufactured at a very low cost.

Further, since it is possible to provide the optical path changing body for changing the optical path of the incident light at a predetermined angle depending on the wafer surface orientation, it is possible to form an arbitrary inclination angle, and the light emitted from the surface light emitting element is efficiently incident on the optical system. It is possible to provide an optical system that is incident on.

Further, when single crystal silicon is used as the optical path changing element, an optical semiconductor element is directly formed on the silicon substrate, or when a compound semiconductor material different from silicon is used as the optical semiconductor element, another compound semiconductor substrate is used. Since a plurality of optical semiconductor elements are formed on the upper surface of the silicon substrate on which a plurality of optical path changing bodies are formed, the optical path changing body with an excellent light receiving element that reduces the mounting cost can be obtained. Will be realized.

Next, another embodiment according to the present invention will be described.

As shown in the perspective view of FIG. 4, a light receiving element such as a photodiode is provided on the inclined surface (element disposition surface) 2c which is the polished smooth silicon single crystal substrate surface of the optical path changing body 2. The optical semiconductor element 5 is arranged, and further the electrode patterns 7 and 8 which are the electric signal line and the current supply line of the optical semiconductor element 5 are formed. Here, 5a is a light receiving part,
5b is an electrode pad, and the electrode pad 5b and the electrode pattern 8 are connected by a bonding wire 9.

Further, in the optical path changing body 2, an impurity diffusion region for ohmic contact is formed between the lower surface 2b of the body and the inclined surface 2c, that is, at the boundary between the inclined surface 2c and the lower surface 2b which is the etching surface. Has been formed.

Using the optical path changing body 2 thus constructed, as shown in the sectional view of FIG.
Is provided with a surface emitting element 3 and an optical path changing body 2 for reflecting emitted light from the surface emitting element 3 on a low position surface 1a of a substrate 1 on which a low position surface and a high position surface having a height difference are formed. An optical transmission body 4 that allows the reflected light from the optical path changing body 2 to enter is disposed on the surface. The optical module M2 is substantially the same as the optical module M1 shown in FIG. 1 except that the optical semiconductor element 5 is provided in the optical path changing body 2, and the same components are designated by the same reference numerals. Is omitted.

Thus, according to the optical module M2, the same effect as that of the optical module M1 is obtained, and more than a predetermined value (for example, 1 × 10 ¹⁸ c) is provided between the inclined surface and the lower surface of the optical path changing body.
Since the impurity concentration of (m ⁻³ or more) is diffused, it is not necessary to form the electric signal line and the current supply line of the light receiving element formed of a metal thin film on two surfaces, and the electric wiring is the edge of the optical path changing body. There is no disconnection.

As described above, according to the optical path changing body of the present invention, since the cross section has a parallelogram shape, the optical path can be operated by the collet of the conventional bonding apparatus and can be mounted on the mounting substrate with high accuracy. A converter can be provided.

Further, according to the optical path changing body of the present invention, the dicing process is used instead of the anisotropic etching technique which strongly depends on the plane direction of the substrate, so that the plane direction and the processing direction of the substrate and the etching conditions are optimized. It is possible to form an inclined surface without changing the shape, and it is possible to manufacture a very low-cost optical path changing body.

According to the optical path changing body of the present invention, the angle of the inclined surface corresponding to the reflecting surface for changing the optical path is 44.0.
By setting the angle to ± 1.0 ° or 46.0 ° ± 1.0 °, it is possible to provide an optical module having excellent characteristics by suppressing the influence of the reflected return light on the fiber surface.

Further, according to the optical path changing body and the manufacturing method thereof of the present invention, it is possible to manufacture the optical path changing body at a very low cost because it can be manufactured in a batch by a wafer process.

Further, according to the optical path changing body of the present invention, it becomes possible to increase the adhesive force with the mounting substrate by utilizing the roughness of the inclined surface produced by machining, and the light with improved reliability can be obtained. Modules can be provided.

Further, according to the optical path changing body of the present invention, since the optical path can be changed at a predetermined angle with respect to the incident light depending on the wafer surface orientation, the light emitted from the surface emitting element can be efficiently directed to the incident optical system. An optical module that can efficiently perform optical connection can be provided.

Further, in the optical path changing body of the present invention, by arranging the light receiving element on the element mounting surface, the emitted light of the surface emitting element can be accurately monitored, and
It is possible to provide an excellent optical module in which the reflected light from the light receiving element can be efficiently incident on the optical transmission body.

Further, since the impurity diffusion region for ohmic contact is formed between the lower surface of the optical path changing body of the present invention and the element disposition surface, the electrode pattern of the optical semiconductor element is formed by the metal thin film as the optical path changing body. It is no longer necessary to form them on the two surfaces, and it is possible to provide a highly reliable optical module in which the metal thin film is not broken at the edge of the optical path changing body.

[0046]

EXAMPLES Next, examples in which the optical module of the present invention is more concretely described will be described. Example 1 In the optical module M1 shown in FIG. 1, the low position surface 1 of the substrate 1 made of single crystal silicon and having a height difference
An optical path changing body 2 and a surface emitting laser 3 are disposed in a, and a mounting groove 1b having a V-shaped cross section formed on a high position surface of the substrate 1.
It is assumed that the optical fiber 4 is provided in the.

Here, the substrate 1 is made of silicon, which is characterized in that it is manufactured by the CZ method and has a low cost.
The step was formed by anisotropic etching. The mounting groove 1b of the optical fiber 4 was formed by anisotropic etching. The surface emitting laser 3 is made of GaAs material.

The optical path changing body 2 was manufactured as follows.

First, as shown in FIG. 2, a wafer W having a (100) surface 10 which was mirror-polished by MCP was used. On the front and back surfaces, a straight line was formed along the [110] direction by photolithography. Photoresists 11 were formed at regular intervals, and the lines were used as markers to perform machining by dicing using a V-shaped grindstone having a tip angle of 90 °. As a result, FIG.
As shown in FIG.
Formed a groove 12 having a V-shaped cross section with an inclination of 44.0 °.

At this time, the plane orientation of the silicon substrate surface is (1
00), the direction of the V-shaped groove is [11
Even in the directions other than the [0] direction, there is no significant difference in chipping at the end of the ground surface. Therefore, the specific substrate plane orientation and groove direction are not limited.

Further, the formation regions of the photoresist 11 were shifted between the front surface 10 and the back surface 14 so as to form the optical path changing columnar body 13 having a 44.0 ° slope.

Next, the upper and lower surfaces 1 of the optical path changing columnar body 13 are formed.
A metal thin film was formed on layers 0 and 14 to form a light reflecting film. Here, Au having a high reflectance was used for the uppermost layer of the metal thin film. In order to effectively form this uppermost metal film on the silicon substrate of the wafer W, a Cr layer is used as a base metal film between the uppermost metal thin film and the silicon substrate, and a silicon oxide film layer is formed on the surface of the silicon substrate. Formed. The total thickness of the metal thin films was about 1 μm.

Then, along the line D shown in FIG. 3, cutting was performed by dicing, and individual optical path changing bodies could be cut and manufactured.

Next, the optical path reflector 2 thus produced
As shown in FIG. 1, a positioning marker (not shown) on the substrate 1, which is a mounting substrate, was used to accurately position and mount and fix. AuSu-based solder was used as the fixing material at this time. At this time, the surface of the surface in contact with the substrate 1 had an inclined surface with an arithmetic average roughness Ra of about 2000Å, which was 10 times or more larger than the arithmetic average roughness Ra of the polished substrate surface. Therefore, the area in contact with the solder film is large, the adhesive force is large, and an optical module with high reliability can be manufactured.

Further, the surface emitting laser 3 was pressed and brought into close contact, the thin film solder (not shown) formed on the substrate 1 to be mounted was melted and cooled, and mounted and fixed on the substrate 1. Then, the optical fiber 4 was mounted on the mounting groove 1b and mounted and fixed by a method such as pressing and fixing with a resin or a flat plate substrate such as a glass plate.

Thus, according to the optical module M1 obtained in this embodiment, the optical anti-slope is mirror-processed {100}.
Since the surface is used, an anti-slope that is highly flattened can be realized. In addition, since the optical path reflector has a V-groove-shaped dicing from both sides of the silicon wafer, the cross section is substantially parallelogram and the upper surface of the optical path changer is flat. It became possible to implement with high precision by.

<Embodiment 2> Next, another embodiment shown in FIGS. 4 and 5 will be described.

The optical path changing body 2 was manufactured in the same manner as in Example 1.

Then, as shown in FIG.
The optical semiconductor element 5 was disposed on the slope 2c of the above as follows.

The optical module M2 shown in FIG. 5 has the same structure as that of the optical module M1 described above, except that the optical semiconductor element 5 is arranged in the optical path changing body 2 and the wiring thereof is provided.

In this embodiment, B (boron) is formed at the boundary between the inclined surface 2c which is the light reflecting surface of the optical path changing body 2 and the lower surface 2b.
Was ion-implanted, and the impurity concentration was set to 1 × 10 ¹⁸ cm ⁻³ or more. At this time, a semiconductor impurity such as Al may be used instead of B.

Next, the electric signal line 7 and the current supply line 8 for the optical semiconductor element 5 were formed of a metal thin film. The upper and lower layers of this metal thin film were Au / Cr, and the total thickness was about 1 μm. At this time, one end of each line was arranged up to the impurity diffusion regions 20 and 21.

Then, another semiconductor substrate, for example, n ⁺ type G
1.0 μm thickness on aAs substrate, impurity concentration 1 × 10 ¹⁸
cm ⁻³ n-type GaAs layer, thickness 4.0 μm, impurity concentration 1 × 10 ¹⁵ cm ⁻³ i-type GaAs layer, thickness 0.5 μm,
An i-type GaAs layer having an impurity concentration of 1 × 10 ¹⁵ cm ⁻³ is formed, and the p-type impurity Z is introduced through the window of the uppermost p-type GaAs layer.
After n was diffused by about 0.5 μm and mesa etching was performed, p and n electrodes were formed to fabricate an optical semiconductor element 5 as a photodiode.

Thereafter, in order to obtain a desired light intensity reflected on the optical fiber, a dielectric multilayer film using a high-refractive material and a low-refractive material may be formed on the optical semiconductor element 5 by vacuum vapor deposition. good. Here, the optical semiconductor element 5 is GaAs
Compound semiconductor materials such as InGaAs / InP other than the above, and avalanche photodiodes other than the PIN photodiode, as long as they have the function of the photodiode, may be used.

Then, the GaA on which the optical semiconductor element 5 is formed
After the s substrate surface and the glass substrate were fixed by WAX, the GaAs substrate was removed by etching, leaving the optical semiconductor element forming region.

Further, the optical semiconductor element fixed to the glass substrate is aligned with the reflecting surface of the silicon substrate surface and brought into contact with each other by hydrogen bonding to remove WAX, and then 300 to 40.
By performing heat treatment at 0 ° C., the optical semiconductor element 5 was further firmly bonded not only by hydrogen bonding but also by oxygen. at the same time,
The electric signal line 7 and the current supply line 8 of the reflector element and the impurity diffusion regions 20 and 21 of the optical path changing body 2 were also annealed and ohmic-bonded.

When the adhesive member 6 is used, AuS
Even if an i-based solder, an AuSu-based solder, a PbSn-based solder, an In-based solder, or the like is used, mounting with excellent mounting strength and reliability can be performed.

The optical path changing body 2 with a light receiving element thus obtained is a positioning marker (not shown) on the mounting substrate 1.
Was accurately positioned and mounted. After that, the optical path changer on which the optical semiconductor element is mounted and the mounting substrate 30
Ohmic junction was performed by performing heat treatment at 0 to 400 ° C. and annealing the electrical signal line, the current supply line on the mounting substrate and the impurity diffusion region of the reflector element.

Thus, the optical module M2 has the following effects in addition to the functions and effects of the optical module M1. In other words, the light receiving elements are collectively attached to the surface of the silicon substrate before dicing / cutting by bonding the substrates to each other, so that it is possible to reduce the mounting time compared to the conventional mounting of individual light receiving elements on the etched slope. High-precision mounting was realized.

Further, although the light receiving element was manufactured on another substrate, the mounting time can be reduced and the accuracy can be improved even if the silicon photodiode is formed on the surface of the silicon substrate by a technique such as solid phase diffusion or ion implantation. Was implemented.

Further, the mounting substrate and the electrode of the optical path changing body with the light receiving element are coupled through the high-concentration impurity region existing at the end of the optical path changing body with the light receiving element. As a result, the electrode is not wired at the edge portion of the optical path changing body with the light receiving element, so that disconnection does not occur.

[0072]

According to the optical path changing body of the present invention, for example, the cross section can have a parallelogram shape, can be operated by a collet of a conventional bonding apparatus, and can be mounted on a mounting substrate with high accuracy. Can provide the body.

Further, instead of the anisotropic etching technique which strongly depends on the surface orientation of the substrate, the installation surface of the main body and the back surface of the installation surface are formed by dicing, so that the surface orientation of the substrate, the processing direction, and the etching conditions. The inclined surface can be formed without optimizing the optical path, and a very low-cost optical path changing body can be manufactured. Further, by utilizing the surface roughness, it becomes possible to increase the adhesive force with the mounting substrate, and it is possible to provide an optical module with improved reliability.

Further, since the optical path changing body of the present invention can be manufactured so that the optical path is changed at a predetermined angle with respect to the incident light depending on the wafer surface orientation of the single crystal, for example, the light emitted from the surface emitting element is efficiently incident. An optical module capable of efficiently optically connecting to an optical system can be provided.

Further, by arranging the light receiving element on the element mounting surface, the emitted light of the surface light emitting element can be accurately monitored, and the reflected light from the light receiving element is efficiently incident on the optical transmission body. It is possible to provide an excellent optical module that can be operated.

Further, by forming an impurity diffusion region for ohmic contact between the lower surface of the optical path changing body of the present invention and the element disposition surface, the electrode pattern of the optical semiconductor element is formed of a metal thin film to form the optical path changing body. It is no longer necessary to form them on the two surfaces, and it is possible to provide a highly reliable optical module in which the metal thin film is not broken at the edge of the optical path changing body.

[Brief description of drawings]

FIG. 1 is a sectional view schematically illustrating an optical path changing body and an optical module according to the present invention.

FIG. 2 is a plan view for schematically explaining a method for manufacturing an optical path changing body according to the present invention.

3 is a cross-sectional view taken along the line A-A ′ in FIG.

FIG. 4 is a perspective view schematically explaining another optical path changing body according to the present invention.

FIG. 5 is a perspective view schematically explaining another optical module according to the present invention.

[Explanation of symbols]

1: substrate 1a: lower surface of substrate 1 1b: Mounting groove 2: Optical path changer 2a, 2b: upper and lower surfaces of optical path changing body 2c: inclined surface of optical path changing body 3: Surface emitting element 4: Optical transmitter 4a: Tip of optical transmission body 5: Optical semiconductor element (light receiving element, photodiode) 5a: Light receiving part 5b: Electrode pad 6: Adhesive surface 7: Electric signal line 8: Current supply line 9: Bonding wire 10, 14: Both main surfaces of the single crystal wafer W 11: Photoresist 12: V groove 13: Columnar portion for optical path changing body 20, 21: impurity diffusion region M1, M2: Optical module L1, L2: outgoing light W: Single crystal wafer α, θ: Inclination angle

Claims (4)

[Claims] 1. An optical path changing body for optical communication for reflecting light emitted from a surface emitting element, wherein an installation surface of the main body and a back surface of the installation surface are formed substantially parallel to each other, and the main body is provided. One side surface is a light reflecting surface of the surface emitting element, and an angle formed between the light reflecting surface and the installation surface is 133 ° to 137 °. 2. The installation surface of the main body and the back surface of the installation surface are formed by a dicing process.
The optical path changing body described in. 3. The optical path changing body according to claim 1, wherein a light receiving element for monitoring the emitted light of the light emitting element is provided on the light reflecting surface. 4. The optical path conversion according to claim 1, wherein the surface emitting element and the light emitted from the surface emitting element are reflected by the low position surface of the substrate on which the high position surface and the low position surface having a height difference are formed. An optical module, in which a body is provided and an optical transmission body that allows reflected light from the optical path changing body to be incident on the high position surface is provided.