JP4057828B2 - Optical path changer and optical module using the same - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an optical path changer used in the fields of optical communication and optical information communication, and an optical module using the same.
[0002]
BACKGROUND OF THE INVENTION
In a surface mount type optical transmission module, the light emitted from a surface emitting laser (Vertical Cavity Surface Emitting Laser (hereinafter also referred to as VCSEL)) excellent in operating current and temperature characteristics is changed by the reflecting surface of a substrate having a predetermined shape. It is possible to easily make an optical connection to an optical element such as an optical fiber. In addition, by mounting the light receiving element on the surface to be the reflecting surface of the base, it becomes easy to monitor the output of the VCSEL.
[0003]
By the way, when the above-mentioned optical path changer is formed of single crystal silicon suitably used as a substrate of an optical transmission module, for example, as disclosed in JP-A-11-112014, the reflection surface of the optical path changer is a substrate. By forming by anisotropic etching, a flat anti-slope can be produced with high accuracy.
[0004]
However, in order to produce a flat anti-inclined surface with high accuracy by anisotropic etching, it is necessary to select a substrate with few impurities, which limits the manufacturing method and increases the cost. That is, for example, a high-cost single crystal silicon substrate manufactured by the FZ (floating zone) method is selected. This is because, for example, a silicon substrate manufactured by a relatively inexpensive method such as the CZ (Chocoral Ski) method is likely to have a defect in the crystal because impurities are mixed in the manufacturing process. Such defects form pits on the etched surface during anisotropic etching, and a flat anti-slope cannot be produced.
[0005]
Even when a single crystal silicon substrate manufactured by the FZ method is used, the etching conditions must be optimized in order to produce a flat anti-slope with high accuracy. Such optimization is not easy. Absent.
[0006]
In addition, when the anisotropic etching technique is used, it is necessary to limit the surface orientation and off-angle of a substrate different from a commonly used single crystal silicon substrate, which leads to high cost.
[0007]
In addition, in order to form the reflection surface of the optical path changer, anisotropic etching is performed for a long time, and the height of the optical path changer is accurately determined unless it is a wide inclined surface formed in a deep groove, that is, a reflection surface. If not designed and manufactured well, the function of the optical path changer will be insufficient.
[0008]
When an optical semiconductor element such as a light receiving element is mounted using the optical path changer as described above, it is mounted on a surface formed by anisotropic etching, and this surface is inclined with respect to the substrate surface. Therefore, there arises a problem that it is difficult to mount a large number of optical semiconductor elements with high accuracy.
[0009]
In addition, when the optical path changer is mounted on the mounting substrate, the optical path changer is pressed and adhered when mounted on the mounting substrate. Therefore, there is no electrode wiring connected to the light receiving element at the edge of the optical path changer. There was a problem that there was a risk of disconnection.
[0010]
Also, since an optical path changer that is larger than the subcarrier of LD (laser diode) or PD (photodiode) is mounted on the mounting substrate, the adhesive force with the mounting substrate becomes insufficient under conventional die bonding conditions, and the optical path conversion There was a problem that the body might be separated.
[0011]
Furthermore, for example, an optical path changer with a protruding upper surface disclosed in Japanese Patent Application Laid-Open No. 11-121863 has poor operability in a collet that adsorbs a flat surface and operates the main body, and pressure and adhesion to the mounting substrate are not good. Have difficulty.
[0012]
Accordingly, the present invention provides a highly reliable optical module that solves the above-described problems, can provide an optical path changer easily and quickly, and can make optical connection between a surface light emitting element and an optical transmitter highly efficient. The purpose is to do.
[0013]
[Means for Solving the Problems]
In order to achieve the above object, an optical path changer of the present invention is an optical path changer for optical communication for reflecting light emitted from a surface light emitting element, and includes an installation surface of a main body and a back surface of the installation surface. It is formed substantially in parallel, and one side surface of the main body is an element arrangement surface that forms an angle of 133 ° to 137 ° with the installation surface, and light emitted from the surface light emitting element is received on the element arrangement surface. And a light receiving element that reflects a part of the emitted light is disposed, and an impurity diffusion region for ohmic contact is formed between the element disposition surface and the installation surface of the main body. It is characterized by. In particular, the light reflecting surface is a polished smooth silicon single crystal surface.
[0014]
In particular, the upper and lower surfaces of the main body which forms the columnar (back of the installation surface and the installation surface of the body) is formed by a dicing process, a surface roughness Ra (arithmetic average roughness) is ing a 1000 Å to 5000 Å.
[0015]
In addition, the method for manufacturing an optical path changer of the present invention includes a step of forming a columnar portion having a parallelogram shape in cross section by forming a plurality of V-grooves alternately positioned on both main surfaces of a single crystal wafer. A part of the polished smooth single crystal substrate surface of the columnar body is used as a light reflecting surface or an element arrangement surface for providing an optical semiconductor element for changing the path of incident light in a predetermined direction.
[0016]
In the optical module of the present invention, a surface emitting element and an optical path changer for reflecting the light emitted from the surface emitting element are disposed on a low position surface having a height difference and a low position surface of the substrate on which the high position surface is formed. In addition, an optical transmission body for allowing the reflected light from the optical path changing body to be incident on the high position surface is provided.
[0018]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, an example of an embodiment according to the present invention will be described in detail based on the drawings schematically shown.
[0019]
FIG. 1 is a sectional view of an optical module M1 for explaining the present invention. The optical module M1 includes a surface light emitting element 3 and an optical path changer 2 that reflects the emitted light L1 of the surface light emitting element 3 on a low position surface 1a having a height difference and a low position surface 1a of the substrate 1 on which the high position surface is formed. , And an optical fiber for allowing the reflected light L2 from the optical path changer 2 to be incident on the tip 4a into the mounting groove 1b formed in a high position plane and having a V-shaped cross section perpendicular to the optical axis, and the like. An optical transmission body 4 composed of the optical waveguide body is provided.
[0020]
Here, the optical path changer 2 has a columnar shape with two upper and lower main surfaces parallel to each other. In other words, the installation surface (lower surface) 2b of the main body and the back surface (upper surface) 2a of the installation surface are formed substantially parallel to each other, and one side surface of the main body is also referred to as a light reflecting surface (hereinafter also referred to as an inclined surface). ) 2c, and the angle α between the inclined surface and the lower surface 2b is 133 ° to 137 ° . The upper and lower surfaces 2a of this body, 2b are formed by dicing process. Further, an optical semiconductor element such as a light reflecting surface or a light receiving element, on which the inclined surface 2c, which is a smooth surface of the silicon single crystal substrate whose side surface is polished, changes the optical path of incident light L1 from the surface light emitting element 3 in a predetermined direction. It is used as an element disposition surface for disposing.
[0021]
In this optical path changer 2, in particular, the main body is made of single crystal silicon, and the inclined surface 2c is a surface (α = 133 ° to 137 °) inclined by 43 ° to 47 ° from the surface of the single crystal substrate. 3 is incident on the optical transmission body 4 disposed horizontally by changing the optical path at an angle of 86 ° to 94 ° on the inclined surface 2c of the optical path conversion body 2 (substantially in the horizontal direction). Can be optically connected efficiently. In this way, in consideration of the aperture ratio of the optical fiber, the light reflecting surface is preferably formed so as to change the optical path at an angle of 90 ± 4 ° with respect to the incident light.
[0022]
The optical path changer 2 is manufactured as follows. First, as shown in a plan view in FIG. 2 and a cross-sectional view along the line AA ′ in FIG. 2, both main surfaces 10 and 14 of the single crystal wafer W were formed with a predetermined photoresist 11. By using a line as a marker and machining by dicing using a V-shaped grindstone having a tip angle of 90 °, a plurality of V grooves 12 alternately positioned on both main surfaces 10 and 14 are formed in a predetermined direction. To form. Thereby, the columnar part 13 which is formed on both sides of the V-shaped groove 12 and has a parallelogram shape in cross section is formed.
[0023]
Since the inclined surface 2c of the optical path changer 2 is a light reflecting surface or a surface on which an optical semiconductor element is arranged with high accuracy, one main surface 10 of the single crystal wafer is mirror-finished by MCP (mechanochemical polishing). What was grind | polished to (arithmetic mean roughness Ra is 100 Å or less) is used.
[0024]
Next, the individual columnar portions 14 are separated by dicing along lines D shown on both sides of the columnar portion 14. In FIG. 3, θ is 44.0 ° ± 1.0 ° or 46.0 ° ± 1.0 °. This is because, in dicing using a V-shaped grindstone having a 90 ° tip, θ has a width of ± 1.0 ° depending on the accuracy of the grindstone and the processing accuracy of the machine. Also, the central value of θ is 44.0 ° or 46.0 ° because when the light beam is incident perpendicular to the optical axis of the optical fiber, the reflected return light is generated in the same path as the incident light, The purpose is to prevent the return light from being reflected on the VCSEL surface and coupled to the optical fiber again. When the coupling efficiency of such return light to the optical fiber is high, the characteristics of the optical module are greatly deteriorated. In particular, when the transmission speed is high, it is necessary to sufficiently reduce such reflected light.
[0025]
A part of the polished smooth silicon single crystal substrate surface of the columnar body obtained in this way is a light reflecting surface for changing the optical path of incident light in a predetermined direction, or an element arrangement for providing an optical semiconductor element. It will be the installation surface.
[0026]
For example, a VCSEL is used as the surface light emitting element 3, but any shape that emits light in the normal direction to the surface of the mounting substrate is applicable.
[0027]
In addition to the optical fiber, the optical transmission body 4 may be an optical waveguide body of various shapes or an optical waveguide formed directly on the substrate 1.
[0028]
Thus, an inclined surface using anisotropic etching technology is not used as an inclined surface for light reflection, and one main surface of the wafer polished on one side can be used as a light reflecting surface or an element arrangement surface of an optical semiconductor element. It is possible to provide an excellent optical path changer having a light reflecting surface (or element arrangement surface) with excellent flatness.
[0029]
Further, as a result of dicing, the surface 2b in contact with the substrate 1 of the optical path changer 2 has an arithmetic average roughness Ra of the surface of the inclined surface of about 1000 to 5000 mm, which is 10 compared with the arithmetic average roughness Ra of the polished substrate surface. More than double. As a result, the area in contact with the solder film is wide, the adhesive force is increased, and a highly reliable optical module can be manufactured.
[0030]
Further, the optical path changer can be manufactured at a very low cost because it can be collectively manufactured by a wafer process.
[0031]
Also, since an optical path changer that changes the optical path at a predetermined angle with respect to the incident light can be provided depending on the wafer surface orientation, an arbitrary inclination angle can be formed, and the outgoing light from the surface light emitting element is efficiently incident on the incident optical system. An optical system can be provided.
[0032]
Furthermore, by using single crystal silicon as the optical path changer, when an optical semiconductor element is formed directly on a silicon substrate, or when a compound semiconductor material different from silicon is used as the optical semiconductor element, a plurality of semiconductor elements are formed on another compound semiconductor substrate. Can be bonded to the silicon substrate surface on which a plurality of optical path changers are formed at once, so that an excellent optical path changer with a light receiving element can be realized with reduced mounting costs. .
[0033]
Next, a description will engage Ru implementation form the present invention.
[0034]
As shown in a perspective view in FIG. 4, an optical semiconductor element that is a light receiving element such as a photodiode is provided on an inclined surface (element arrangement surface) 2 c that is a polished smooth silicon single crystal substrate surface of the optical path changer 2. 5 and electrode patterns 7 and 8 which are electric signal lines and current supply lines of the optical semiconductor element 5 are formed. Here, 5 a is a light receiving portion, 5 b is an electrode pad, and the electrode pad 5 b and the electrode pattern 8 are connected by a bonding wire 9.
[0035]
Further, in the optical path changer 2, an impurity diffusion region for ohmic contact is formed between the lower surface 2b of the main body and the inclined surface 2c, that is, at the boundary between the inclined surface 2c and the lower surface 2b that is the etching surface. Yes.
[0036]
Using the optical path changer 2 configured as described above, as shown in a cross-sectional view in FIG. 5, the optical module M2 includes a low position surface 1a of the substrate 1 on which a low position surface and a high position surface having a height difference are formed. In addition, a surface light emitting element 3 and an optical path changer 2 that reflects light emitted from the surface light emitting element 3 are disposed, and an optical transmission member 4 that causes reflected light from the optical path changer 2 to enter the high position surface. . The optical module M2 has substantially the same configuration as that of the optical module M1 shown in FIG. 1 except that the optical semiconductor element 5 is disposed in the optical path changer 2, and the same components are denoted by the same reference numerals and described. Is omitted.
[0037]
Thus, according to the optical module M2, the same effect as that of the optical module M1 is achieved, and an impurity concentration of a predetermined value or more (for example, 1 × 10 ¹⁸ cm ⁻³ or more) is provided between the inclined surface and the lower surface of the optical path ^changer. Since it is diffused, it is not necessary to form the electric signal line and the current supply line of the light receiving element formed of a metal thin film or the like on two surfaces, and the electric wiring is not disconnected at the edge of the optical path changer.
[0038]
As described above, according to the optical path changer of the present invention, since the cross section is a parallelogram shape, an optical path changer that can be operated with a collet of a conventional bonding apparatus and can be mounted on a mounting substrate with high accuracy. Can be provided.
[0039]
Further, according to the optical path changer of the present invention, the dicing process is used instead of the anisotropic etching technique that strongly depends on the plane direction of the substrate, thereby optimizing the plane direction and the processing direction of the substrate and the etching conditions. An inclined surface can be formed without any problem, and a very low cost optical path changer can be produced.
[0040]
Further, according to the optical path changer of the present invention, the angle of the inclined surface corresponding to the reflection surface for converting the optical path is set to 44.0 ° ± 1.0 ° or 46.0 ° ± 1.0 °, By suppressing the influence of the reflected return light, an optical module having excellent characteristics can be provided.
[0041]
Further, according to the optical path changer and the manufacturing method thereof according to the present invention, since it is possible to make a batch process by a wafer process, it is possible to produce a very low cost optical path changer.
[0042]
In addition, according to the optical path changer of the present invention, it is possible to increase the adhesive force with the mounting substrate by using the roughness of the inclined surface produced by machining, thereby providing an optical module with improved reliability. it can.
[0043]
Further, according to the optical path changer of the present invention, the light path can be changed at a predetermined angle with respect to the incident light depending on the wafer surface orientation, so that the light emitted from the surface light emitting element can be efficiently transferred to the incident optical system. An optical module capable of optical connection can be provided.
[0044]
Further, in the optical path changer of the present invention, the light receiving element is disposed on the element disposition surface, so that the emitted light of the surface light emitting element can be accurately monitored and the reflected light from the light receiving element can be efficiently reflected. An excellent optical module that can be incident on the optical transmission body can be provided.
[0045]
Furthermore, since an impurity diffusion region for ohmic contact is formed between the lower surface of the optical path changer of the present invention and the element disposition surface, the electrode pattern of the optical semiconductor element is formed on the two surfaces of the optical path changer with a metal thin film. Therefore, it is possible to provide an optical module with excellent reliability in which there is no disconnection of the metal thin film at the edge of the optical path changer.
[0046]
【Example】
Next, reference examples and examples that further embody the optical module of the present invention will be described.
< Reference example >
In the optical module M1 shown in FIG. 1, the optical path changer 2 and the surface emitting laser 3 are disposed on the low position surface 1a of the substrate 1 made of single crystal silicon and having a height difference, and formed on the high position surface of the substrate 1. It is assumed that the optical fiber 4 is disposed in the mounting groove 1b having a V-shaped cross section.
[0047]
Here, the substrate 1 is made of silicon, which is particularly characterized in that the material is manufactured by the CZ method and the cost is low, and the step is formed by anisotropic etching. The mounting groove 1b of the optical fiber 4 was formed by anisotropic etching. The surface emitting laser 3 was made of a GaAs material.
[0048]
Moreover, the optical path changer 2 was produced as follows.
[0049]
First, as shown in FIG. 2, a wafer W having a (100) surface polished to a mirror surface by MCP is used, and the front and back surfaces are photolithographically linearly along the [110] direction by photolithography. Resist 11 was deposited and formed at equal intervals, and machining was performed by dicing using a V-shaped grindstone having a tip at an angle of 90 ° using this line as a marker. As a result, as shown in FIG. 3, a groove 12 having a V-shaped cross section having an inclination of 44.0 ° with respect to the single crystal substrate surface (100) plane was formed.
[0050]
At this time, even when the surface orientation of the silicon substrate surface is other than (100), and the direction of the groove having a V-shaped cross section is other than the [110] direction, the chipping at the edge of the grinding surface is greatly different. Absent. Therefore, the specific substrate surface orientation and groove direction are not limited.
[0051]
In addition, the formation region of the photoresist 11 was shifted between the front surface 10 and the back surface 14 so as to form the optical path changer columnar body 13 having a 44.0 ° slope.
[0052]
Next, a metal thin film was formed so as to form light reflecting films on the upper and lower surfaces 10 and 14 of the optical path changer columnar body 13. Here, Au having a high reflectance was used for the uppermost layer of the metal thin film. In order to effectively form the uppermost metal film on the silicon substrate of the wafer W, a Cr layer is used as a base metal film between the uppermost metal thin film and the silicon substrate, and a silicon oxide film layer is formed on the silicon substrate surface. Formed. The total film thickness of the metal thin film was about 1 μm.
[0053]
And it cut | disconnected by dicing along the line D shown in FIG. 3, and it cut and produced so that it might become each optical path change body.
[0054]
Next, as shown in FIG. 1, the optical path reflector 2 produced in this way was accurately positioned and mounted and fixed using an alignment marker (not shown) on the substrate 1 as a mounting substrate. In this case, AuSu solder was used as a fixing material. At this time, the surface in contact with the substrate 1 had a surface roughness of about 2000 mm, and the arithmetic average roughness Ra of the surface of the slope was about 10 times larger than the arithmetic average roughness Ra of the polished substrate surface. For this reason, an optical module having a large area in contact with the solder film, a large adhesive force, and high reliability can be manufactured.
[0055]
Further, the surface emitting laser 3 was pressed and adhered, and a thin film solder (not shown) formed on the substrate 1 to be mounted was melted and cooled, and mounted and fixed on the substrate 1. Next, the optical fiber 4 was mounted on the mounting groove 1b and mounted and fixed by a method such as pressing and fixing with a flat substrate such as a resin or a glass plate.
[0056]
Thus, according to the optical module M1 obtained in this reference example, the optically inclined surface uses the {100} plane mirrored, so that an anti-inclined surface flattened with high accuracy can be realized. In addition, the optical path reflector is formed by performing V-groove dicing from both sides of the silicon wafer so that the cross section is substantially parallelogram and the top surface of the optical path converter is flattened. High-accuracy mounting is also possible.
[0057]
<Example>
Next, a description will be given real施例shown in FIGS.
[0058]
The optical path changer 2 was produced in the same manner as in the reference example .
[0059]
And as shown in FIG. 4, the optical semiconductor element 5 was arrange | positioned on the slope 2c of the optical path changer 2 as follows.
[0060]
Further, the optical module M2 shown in FIG. 5 is configured in the same manner as the optical module M1 already described, except that the optical semiconductor element 5 is disposed on the optical path changer 2 and wiring is provided.
[0061]
In this embodiment, B (boron) is ion-implanted into the boundary portion between the inclined surface 2c and the lower surface 2b, which is the light reflecting surface of the optical path changer 2, and the impurity concentration is set to 1 × 10 ¹⁸ cm ⁻³ or more. At this time, other than B, as long as it is a semiconductor impurity such as Al.
[0062]
Next, the electric signal line 7 and the current supply line 8 for the optical semiconductor element 5 were formed of a metal thin film. This metal thin film was an upper layer / lower layer, made of Au / Cr, and the total thickness was about 1 μm. At this time, one end of each line was disposed up to the impurity diffusion regions 20 and 21.
[0063]
Then, on another semiconductor substrate, for example, an n ⁺ -type GaAs substrate, an n-type GaAs layer having a thickness of 1.0 μm and an impurity concentration of 1 × 10 ¹⁸ cm ⁻³ , a thickness of 4.0 μm and an impurity concentration of 1 × 10 ¹⁵ cm ⁻³ . An i-type GaAs layer having a thickness of 0.5 μm and an impurity concentration of 1 × 10 ¹⁵ cm ⁻³ is formed, and p-type impurity Zn is diffused by about 0.5 μm from the window of the uppermost p-type GaAs layer. After mesa etching, p and n electrodes were formed to produce an optical semiconductor element 5 that is a photodiode.
[0064]
Thereafter, in order to obtain a desired light intensity reflected to the optical fiber, a dielectric multilayer film using a high refractive material and a low refractive material may be formed on the optical semiconductor element 5 by vacuum deposition. Here, the optical semiconductor element 5 may be made of a compound semiconductor material such as InGaAs / InP other than GaAs, or may have a photodiode function such as an avalanche photodiode other than a PIN photodiode.
[0065]
Then, after fixing the surface of the GaAs substrate on which the optical semiconductor element 5 was formed and the glass substrate by WAX, the optical semiconductor element formation region was left and the GaAs substrate was removed by etching.
[0066]
Further, the optical semiconductor element fixed to the glass substrate is aligned with the reflective surface of the silicon substrate surface, brought into contact with hydrogen bonds, WAX is removed, heat treatment is performed at 300 to 400 ° C., and the optical semiconductor element 5 is hydrogenated. not only binds, further strongly adhered through an oxygen. At the same time, the electric signal line 7 of the light receiving element, the current supply line 8 and the impurity diffusion regions 20 and 21 of the optical path changer 2 were also annealed and ohmic joined.
[0067]
Further, when the adhesive member 6 is used, mounting with excellent mounting strength and reliability can be performed even when using AuSi, AuSu, PbSn, or In solder.
[0068]
The optical path changer 2 with the light receiving element thus obtained was accurately positioned and mounted using an alignment marker (not shown) on the mounting substrate 1. Thereafter, heat treatment is performed at 300 to 400 ° C. on the optical path changer and the mounting substrate on which the optical semiconductor element is mounted, and the electric signal line, the current supply line, and the impurity diffusion region of the light receiving element on the mounting substrate are annealed. Ohmic joined.
[0069]
Thus, according to the optical module M2, in addition to the functions and effects of the optical module M1, the following effects can be obtained. In other words, since the light receiving elements are collectively bonded to the surface of the silicon substrate before dicing and cutting, the mounting time is reduced compared to the conventional mounting of each light receiving element on an etched slope. High-precision mounting was realized.
[0070]
In addition, the light-receiving element was fabricated on another substrate, but even if silicon photodiodes were formed on the silicon substrate surface using techniques such as solid phase diffusion and ion implantation, mounting time was reduced and high-precision mounting was achieved. Realized.
[0071]
In addition, the mounting substrate and the electrode of the optical path changer with the light receiving element are coupled to each other through a high concentration impurity region present at the end of the optical path changer with the light receiving element. As a result, since the electrode is not wired at the edge portion of the optical path changer with the light receiving element, disconnection does not occur.
[0072]
【The invention's effect】
According to the optical path changer of the present invention, for example, it is possible to provide an optical path changer that can be formed into a parallelogram shape in cross section, can be operated with a collet of a conventional bonding apparatus, and can be mounted on a mounting substrate with high accuracy.
[0073]
Also, instead of anisotropic etching technology that strongly depends on the substrate orientation, dicing is used to form the main body installation surface and the back surface of the installation surface, thereby optimizing the substrate surface orientation, processing direction, and etching conditions. Therefore, the inclined surface can be formed without making an optical path changer at a very low cost. In addition, the surface roughness can be used to increase the adhesive force with the mounting substrate, and an optical module with improved reliability can be provided.
[0074]
In addition, since the optical path changer of the present invention can be fabricated so as to change the optical path at a predetermined angle with respect to the incident light by the single crystal wafer surface orientation, for example, the light emitted from the surface light emitting element is efficiently transferred to the incident optical system. An optical module that can be optically connected efficiently can be provided.
[0075]
In addition, by providing the light receiving element on the element mounting surface, it is possible to monitor the emitted light of the surface light emitting element with high accuracy and to efficiently cause the reflected light from the light receiving element to enter the optical transmission body. An excellent optical module that can be provided can be provided.
[0076]
Furthermore, by forming, for example, an impurity diffusion region for ohmic contact between the lower surface of the optical path changer of the present invention and the element disposition surface, the electrode pattern of the optical semiconductor element is formed on the two surfaces of the optical path changer with a metal thin film. Therefore, it is possible to provide an optical module with excellent reliability in which there is no disconnection of the metal thin film at the edge of the optical path changer.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view schematically illustrating an optical path changer and an optical module for explaining the present invention.
FIG. 2 is a plan view for schematically explaining the method of manufacturing the optical path changer according to the present invention.
FIG. 3 is a cross-sectional view taken along line AA ′ in FIG. 2;
The engagement Ru optical path converter to the present invention; FIG is a perspective view illustrating schematically.
The optical module engaging Ru in the present invention; FIG is a perspective view illustrating schematically.
[Explanation of symbols]
1: Substrate 1a: Low-position surface 1b of substrate 1: Mounting groove 2: Optical path changer 2a, 2b: Upper and lower surfaces 2c of the optical path changer 3: Inclined surface of the optical path changer 3: Surface light emitting element 4: Optical transmitter 4a : Tip 5 of optical transmission body 5: optical semiconductor element (light receiving element, photodiode)
5a: light receiving portion 5b: electrode pad 6: adhesive surface 7: electric signal line 8: current supply line 9: bonding wire 10, 14: both main surfaces 11 of single crystal wafer W 11: photoresist 12: V groove 13: optical path conversion Body columnar portions 20, 21: Impurity diffusion regions M1, M2: optical modules L1, L2: outgoing light W: single crystal wafer α, θ: inclination angle

Claims (3)

An optical path converter for optical communication for reflecting light emitted from the surface emitting element, together with formed by substantially parallel with the back of the installation surface and the installation surface of the main body, the one side surface of said body A light receiving element having an element disposition surface that forms an angle of 133 ° to 137 ° with the installation surface, and receives and monitors the emitted light from the surface light emitting element on the element disposition surface and reflects a part of the emitted light. Is provided, and an impurity diffusion region for ohmic contact is formed between the element arrangement surface and the installation surface of the main body.   The optical path changer according to claim 1, wherein the installation surface of the main body and the back surface of the installation surface are formed by dicing.   3. The surface light emitting element and the optical path changer according to claim 1 for reflecting the light emitted from the surface light emitting element on the low position surface of the substrate on which the high position surface and the low position surface having a height difference are formed. In addition, an optical module is provided, wherein an optical transmission body for allowing the reflected light from the optical path changing body to enter the high position surface.

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