JP2003295166A - Method of manufacturing electro-optical device, electro- optical device, and electronic equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To reduce a malfunction caused by a lateral electric field in an electro-optical substance such as liquid crystal, moreover, to reduce a malfunction caused by a step of the electro-optical substance. <P>SOLUTION: An electro-optical device is provided with pixel electrodes (9a) on a TFT array substrate (10), and counter electrodes (21) on a counter substrate (20). At a substrate for the pixel electrodes on the TFT array board, a gently stepped projection part (402) is arranged in an area facing a gap between pixel electrodes adjacent to each other. The manufacturing method thereof includes a step for forming a flattening film on a steeply stepped projection, and a step for making gentle the step of the projection by etching back the projection part together with this flattening film. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technical field of a manufacturing method for manufacturing an electro-optical device such as a liquid crystal device, and in particular, polarities of voltages applied to pixel electrodes adjacent to each other in a column direction or a row direction are opposite to each other. The thin film transistor (TFT) adopting the inversion drive method in which the drive voltage polarity is periodically inverted for each pixel row or pixel column so that
(Hereinafter referred to as FT) manufacturing method for manufacturing an electro-optical device such as an active matrix drive type liquid crystal device, the electro-optical device, and a technique of an electronic apparatus such as a projection display device including the electro-optical device. Belong to the field.

[0002]

BACKGROUND ART Generally, in this type of electro-optical device, in order to prevent deterioration of an electro-optical material due to application of a DC voltage and prevent crosstalk and flicker in a display image, a voltage polarity applied to each pixel electrode is set to a predetermined rule. The inversion drive method of reversing is adopted.

During the display corresponding to the image signal of one frame or field, the pixel electrodes arranged in odd rows are driven by the positive potential with reference to the potential of the counter electrode and are arranged in even rows. The pixel electrodes arranged in even rows are driven in reverse while the corresponding pixel electrodes are driven with a negative potential with reference to the potential of the counter electrode and a display corresponding to the image signal of the next frame or field subsequent thereto is performed. Are driven with a positive potential and pixel electrodes arranged in odd rows are driven with a negative potential (that is, while driving pixel electrodes in the same row with the same polarity potential, the potential polarity is The 1H inversion drive method (inversion at frame or field period) is used as an inversion drive method that is relatively easy to control and enables high-quality image display.

Also, the 1S inversion driving method in which the pixel electrodes in the same column are driven by the potential of the same polarity and the voltage polarity is inverted in each frame in a frame or field cycle is relatively easy to control and of high quality. It is used as an inversion drive system that enables image display.

Furthermore, a dot inversion driving method has been developed in which the polarity of the voltage applied to each pixel electrode is inverted between adjacent pixel electrodes in both the column direction and the row direction.

[0006]

However, like the above-mentioned 1H inversion driving method, 1S inversion driving method, dot inversion driving method, etc., the voltage of pixel electrodes adjacent to each other on the TFT array substrate (that is, 1H inversion driving method). Voltage applied to pixel electrodes adjacent to each other in the column direction in the method, voltage applied to pixel electrodes adjacent to each other in the row direction in the 1S inversion driving method, pixel electrodes adjacent to each other in the row and column directions in the dot inversion driving method The voltage applied to) has the opposite polarity,
There arises a problem that a lateral electric field (that is, an electric field parallel to the substrate surface or an oblique electric field including a component parallel to the substrate surface) is generated between adjacent pixel electrodes. When such a lateral electric field is applied to an electro-optical material which is supposed to be applied with a vertical electric field (that is, an electric field in a direction perpendicular to the substrate surface) between the pixel electrode and the counter electrode facing each other. However, there is a problem in that a malfunction of the electro-optical material such as a defective alignment of the liquid crystal occurs, light leakage occurs in this portion, and the contrast ratio decreases.

On the other hand, in a region where a horizontal electric field is generated, a convex portion is formed on the base layer of the pixel electrode and the distance between the pixel electrode and the counter electrode is narrowed to strengthen the vertical electric field, thereby adversely affecting the horizontal electric field. Weakening measures are also being considered by the applicant. However, when a convex portion having a steep step or a steep side wall is formed on the base layer of the pixel electrode, the step causes the defective operation of the electro-optical material such as the alignment failure of the liquid crystal, and rather deteriorates the image quality. It can be done. At this time, it is possible to form a somewhat gentle step by the wiring or element pattern laminated further below the base layer, but this makes it possible to form the base layer of the pixel electrode in the region where the lateral electric field actually occurs. There is a problem that it is difficult to form the convex portion with high precision and the degree of freedom in design is significantly reduced. Then, this problem becomes more serious as the pixel pitch becomes finer. In the end, it is actually extremely difficult to form a convex portion having a gentle step in a desired region accurately or relatively easily.

The present invention has been made in view of the above-mentioned problems, and by forming a convex portion in a region where a horizontal electric field is generated, it is possible to surely reduce malfunction of the electro-optical material such as liquid crystal due to a horizontal electric field. In addition, a method for manufacturing an electro-optical device capable of manufacturing an electro-optical device such as a liquid crystal device, in which malfunctions of the electro-optical material such as liquid crystal alignment defect can be reduced by grading the steps in the convex portion. Another object is to provide an electro-optical device and an electronic device including the electro-optical device.

[0009]

In order to solve the above-mentioned problems, a first method of manufacturing an electro-optical device according to the present invention comprises an electro-optical substance sandwiched between a pair of first and second substrates. A plurality of pixel electrodes including a first pixel electrode group for inversion driving in one cycle and a second pixel electrode group for inversion driving in a second cycle complementary to the first cycle; An electro-optical device manufacturing method for manufacturing an electro-optical device which is arranged in a plane on a first substrate and has a counter electrode facing the plurality of pixel electrodes on the second substrate, the method comprising: And a step of forming wirings and elements for driving the pixel electrodes, and a convex portion on an upper layer side of the wirings and elements on the first substrate in a region which is a gap between the pixel electrodes adjacent to each other in plan view. And the step of forming a flattening film on the surface of the convex portion. A step that is gentler than the step in the step of forming on the convex portion and around the convex portion, and removing the planarizing film by etching and exposing the convex portion after removing the planarizing film. An etchback step of retreating the surface and a step of forming the plurality of pixel electrodes on the upper layer side of the convex portion after the etchback step are provided.

According to the first method of manufacturing the electro-optical device of the present invention, the electro-optical device according to the manufacturing method includes the first pixel electrode group to be inverted and driven in the first cycle, and the first pixel electrode group. A plurality of pixel electrodes including a second pixel electrode group for inversion driving in a second period complementary to the period, are arranged in a plane on the first substrate, and Pixel electrodes adjacent to each other driven by driving voltages of opposite polarities and (ii)
At the time of inversion driving, there are both adjacent pixel electrodes that are driven by driving voltages having the same polarity at each time. Both of them exist if they are electro-optical devices such as a matrix drive type liquid crystal device adopting an inversion drive method such as the above-mentioned 1H inversion drive method or 1S inversion drive method. Therefore, a lateral electric field is generated between the pixel electrodes adjacent to each other belonging to different pixel electrode groups (that is, the pixel electrodes adjacent to each other to which a potential of opposite polarity is applied).

In the present invention, the convex portion is formed on the upper layer side of the wiring and the element formed on the first substrate in a region which becomes a gap between the pixel electrodes adjacent to each other in plan view. Further, a flattening film is formed on the convex portion and around the convex portion. On this occasion,
The surface of the flattening film is formed so as to have a gentler step than the step on the surface of the convex portion. Then, in an etch back process, the flattening film is removed by etching, and the surface of the convex portion exposed after the removal of the flattening film is receded. Then, a pixel electrode is formed on the upper layer side of this convex portion.

Therefore, a convex portion is positively formed in a region which becomes a gap between the pixel electrodes adjacent to each other. First, the edge portion of each pixel electrode is formed so as to be located on the convex portion. By doing so, the vertical electric field generated between each pixel electrode and the counter electrode is relatively strengthened as compared with the horizontal electric field generated between adjacent pixel electrodes (particularly, pixel electrodes belonging to different pixel electrode groups). . That is, since the electric field generally becomes stronger as the distance between the electrodes becomes shorter, the edge of the pixel electrode approaches the counter electrode by the height of the convex portion, and the vertical electric field generated between the two is strengthened. Secondly, regardless of whether or not the edge of each pixel electrode is located on this convex portion, the lateral electric field generated between adjacent pixel electrodes (particularly, pixel electrodes belonging to different pixel electrode groups) is convex. The presence of a portion weakens the dielectric constant of the convex portion and reduces the volume of the electro-optical material through which the transverse electric field passes (by partially replacing the convex portion) with respect to the electro-optical substance of the transverse electric field. The action can be reduced. Therefore, it is possible to reduce the malfunction of the electro-optical material such as the alignment failure of the liquid crystal due to the lateral electric field due to the inversion driving method. At this time, as described above, the edge portion of the pixel electrode may or may not be located on the convex portion, and may be located in the middle of the inclined or substantially vertical side surface of the convex portion. Good.

In addition, since the light-shielding film for hiding the defective portion of the electro-optical material can be made small, the aperture ratio of each pixel can be increased without causing image defects such as light leakage.

In particular, in the present invention, since the etch back process is performed using the flattening film having a gentle step on the surface, the gentle step is finally transferred to the surface of the convex portion. Therefore, it becomes possible to form a convex portion having a gentle step. Therefore, it is possible to effectively prevent the malfunction of the electro-optical device such as the alignment failure of the liquid crystal due to the step near the convex portion. That is, if the initial convex portion formed by etching or the like is left as it is, the step on the side wall is steep, or the upper and lower ends of the side wall of the convex portion are angular, so that the angle of the convex surface changes sharply. In such a place, a discontinuous surface is generated in the electro-optical material such as liquid crystal, and operation failure of the electro-optical material such as alignment failure of the liquid crystal occurs. In particular, when the alignment film formed on the pixel electrode is subjected to rubbing treatment, if the step of the convex portion is gentle, the rubbing can be performed comparatively easily and satisfactorily, resulting in poor alignment of the liquid crystal. It is possible to very effectively prevent malfunction of the electro-optical material such as.

During the etch back process, the flattening film is
It may be completely removed, but some areas may be left a little. In the etching process, the etching may be stopped by controlling the time, or the etching may be stopped by detecting it by using an appropriate stopper.

Further, by using a material different from the material forming the convex portion as the material of the flattening film, the convex portion which is difficult or impossible to be formed to have a gentle step can be gently formed. It becomes easy to form a flattening film having various steps. However, even if the same material as that of the convex portion is used as the material of the flattening film, as long as the level difference in the flattening film is gentle to some extent, the etchback process using the flattening film is performed. The effect of loosening the step in the convex portion is exerted. As described above, it is possible to suppress the malfunction of the electro-optical material due to the step due to the convex portion for reducing the malfunction of the electro-optical material due to the lateral electric field.

As a result, the malfunction due to the lateral electric field in the electro-optical material such as liquid crystal can be surely reduced by forming the convex portion, and the formation of the convex portion causes the malfunction due to the step in the electro-optical material such as liquid crystal. It is possible to suppress the occurrence of the noise by a gradual step, and it is possible to relatively easily manufacture an electro-optical device such as a liquid crystal device that displays a high-quality image with high contrast and brightness.

In an aspect of the first method of manufacturing the electro-optical device of the present invention, the etching back step is performed by changing an etching rate of a material forming the planarizing film and an etching rate of a material forming the convex portion. The etching is performed so as to match each other.

According to this aspect, since the etching rates of the both are the same, the gentle step shape formed on the flattening film can be transferred to the convex portion by etching back as almost the same shape. Here, "the etching rates match" has a broad meaning including not only the case where the etching rates are completely matched but also the cases where the selection ratios are matched within a range of about ± 10%. In any case, the same or similar step shape is transferred to the convex portion depending on the degree of coincidence between the two etching rates.

Alternatively, in another aspect of the manufacturing method of the first electro-optical device of the present invention, in the etching back step, an etching rate of a material forming the planarizing film and an etching rate of a material forming the convex portion are formed. By making them different from each other, the step shape of the convex portion after the etching step is controlled.

According to this aspect, since the two etching rates are different from each other, the gentle step shape formed on the flattening film is transferred to the convex portion as a different shape by etching back. Here, specifically, depending on the material and shape of the convex portion, the material and film thickness of the flattening film, etc., what kind of step-shaped convex portion can be obtained after the etch-back process depending on the difference in etching rate. , If experimentally or empirically, or by studying in advance by simulation, etc., the difference in etching rate is positively used during actual manufacturing,
It is also possible to form a convex portion having a step closer to a desired shape.

In another aspect of the first electro-optical device manufacturing method of the present invention, in the step of forming the flattening film, the flattening film is formed by applying a resist having fluidity.

According to this aspect, the flattening film can be formed by the relatively simple process of resist coating, and the etching for the flattening film can be controlled relatively easily.

In this aspect, in the step of forming the flattening film, the flattening film may be formed by first applying the resist and then baking the resist.

When manufactured in this manner, the resist is somewhat sagged by baking, so that the gradualness of the convex portions is increased. Therefore, by controlling the firing temperature and time, it becomes possible to obtain a desired step shape relatively easily.

In another aspect of the first electro-optical device manufacturing method of the present invention, the step of forming the flattening film is performed by spin coating to form the flattening film as an SOG (Spin On Glass) film. Form.

According to this aspect, the flattening film can be formed by the relatively simple process of spin coating, and the etching for the flattening film can be controlled relatively easily.

In another aspect of the first electro-optical device manufacturing method of the present invention, in the step of forming the convex portion, the convex portion is at least partially formed by forming a groove in the first substrate. .

According to this aspect, depending on, for example, which part of the wiring or element is to be arranged in which groove or in which groove the depth is, the convex portion can be formed at least partially using the groove. . Incidentally, such a groove may be directly formed by etching on the first substrate, or may be formed by etching on the interlayer insulating film formed on the first substrate.

In another aspect of the first method of manufacturing the electro-optical device of the present invention, in the step of forming the convex portion, the convex portion is at least partially formed due to the presence of the wiring and the element.

According to this aspect, for example, which part of the wiring or the element made of a conductive film or a semiconductor film having a predetermined film thickness,
The convex portion can be formed at least partially depending on the position and the region on the first substrate. It should be noted that the conductive film or the like forming such wirings or elements may be formed by patterning after film formation by, for example, a sputtering method or a CVD (Chemical Vapor Deposition) method.

Alternatively, in another aspect of the manufacturing method of the first electro-optical device of the present invention, in the step of forming the convex portion, the convex portion is formed by patterning the interlayer insulating film after forming the interlayer insulating film.

According to this aspect, the convex portion can be formed by using a relatively simple process of patterning the interlayer insulating film. In particular, the interlayer insulating film is formed by CMP (Chemically Mechani
If patterning is performed on the flattened ground by a cally Polishing (chemical mechanical polishing) process, a convex portion having a desired pattern can be accurately formed by the patterning.

In another aspect of the manufacturing method of the first electro-optical device of the present invention, the method further comprises the steps of forming an alignment film on the surface of the pixel electrode and rubbing the alignment film.

According to this aspect, since the rubbing process is performed on the alignment film formed on the gentle step, the rubbing is performed satisfactorily and evenly when rubbing up or particularly rubbing down. It is also possible. Therefore, in the manufactured electro-optical device, malfunctions of the electro-optical device such as alignment failure of liquid crystal are reduced, and high quality image display is possible.

In another aspect of the first electro-optical device manufacturing method of the present invention, the method further comprises the step of forming a protective film on the convex portion after the etchback step, and the step of forming the pixel electrode. Then, the pixel electrode is formed on the protective film.

According to this aspect, since the pixel electrode is formed after forming the protective film or the passivation film on the surface of the convex portion after being etched back, the surface is not roughened by the etching back and the like. It becomes possible to manufacture an electro-optical device having high reliability. Incidentally, such a protective film may be made of, for example, an oxide film, a nitride film, or the like.

In another aspect of the first method of manufacturing the electro-optical device of the present invention, the step of forming the convex portion includes a step of forming a first region along a first direction in a region serving as a gap between the pixel electrodes. The protrusion is formed only in one of the second region along the second direction that intersects the first direction in the region serving as the gap between the pixel electrodes.

According to this aspect, the convex portions extending in a stripe shape are formed in the image display area corresponding to the pixel columns or the pixel rows, whereby the lateral electric field in the direction crossing the stripe convex portions is formed. The adverse effect due to can be reduced. Moreover, in the gap between the pixel electrodes where the stripe-shaped convex portions are not formed, the malfunction of the electro-optical material due to the step hardly occurs.

In the aspect in which the convex portion is formed only in one of the first and second regions, the step of forming the convex portion includes a gap between the adjacent pixel electrodes which are driven in reverse with different polarities. May be configured to form the convex portion as the one area.

With this structure, a lateral electric field is generated,
Adjacent pixel electrodes belonging to different pixel electrode groups (ie,
Since the convex portions are provided only between the pixel electrodes to which the electric potentials of opposite polarities are applied, adjacent pixel electrodes belonging to the same pixel electrode group in which a horizontal electric field hardly occurs (that is, electric potentials of the same polarity are applied). No convex portion is provided between the pixel electrodes). Therefore, in the above-described 1H inversion drive or 1S inversion drive, the convex portion formed only in the effective portion causes
The adverse effect of the lateral electric field can be reduced extremely effectively. Further, it is advantageous that the operation failure of the electro-optical material due to the step is not caused due to the convex portion that does not contribute to reducing the adverse effect of the lateral electric field.

Instead of providing such a stripe-shaped convex portion, a relatively high convex portion is provided in a gap between adjacent pixel electrodes included in different pixel electrode groups, and the same pixel electrode group is provided. Even if a relatively low convex portion is provided in the gap between the pixel electrodes adjacent to each other included in, the similar effect can be obtained.

In another aspect of the first method of manufacturing the electro-optical device of the present invention, the element for driving the pixel electrode formed on the first substrate is bonded by SOI (Silicon On Insu).
a single crystal semiconductor layer formed by a lator).

According to this aspect, it is possible to improve the performance of the element by forming the element using the single crystal semiconductor as the active layer. In such bonding, generally, the supporting substrate and the surface of the single crystal layer are made flat and mirror-finished to bond the two, so that it is difficult to freely control the uneven shape after the element or wiring is formed, but as described above. By forming the protrusions by etching back, shape control is facilitated and liquid crystal alignment defects can be prevented.

In order to solve the above-mentioned problems, the second electro-optical device manufacturing method of the present invention comprises an electro-optical substance sandwiched between a pair of first and second substrates, and is driven in reverse at a first cycle. A plurality of pixel electrodes including a first pixel electrode group to be driven and a second pixel electrode group to be inverted-driven in a second cycle complementary to the first cycle are planar on the first substrate. A method of manufacturing an electro-optical device, comprising: an arrayed array of counter electrodes facing the plurality of pixel electrodes on the second substrate, wherein the pixel electrodes are arranged on the first substrate. A step of forming a wiring and an element to be driven, and a step of forming a convex portion on an upper layer side of the wiring and the element on the first substrate in a region serving as a gap between adjacent pixel electrodes in plan view, An etch-back step of receding the surface of the convex portion and the etching And a step of forming a plurality of pixel electrodes on the upper side of the convex portion in the after-back step.

According to the second method of manufacturing the electro-optical device of the present invention, similarly to the method of manufacturing the first electro-optical device described above, the positive electrode is positively formed in the region which becomes the gap between the adjacent pixel electrodes. There is no difference in that a convex portion is formed on the surface. Therefore, if the edge portion of the pixel electrode is formed so as to be located on the convex portion, the vertical electric field between the pixel electrode and the counter electrode can be strengthened, and the edge portion of the pixel electrode can be located on the convex portion. Regardless of whether they are located or not, it is possible to weaken the lateral electric field between adjacent pixel electrodes according to the dielectric constant of the convex portion and reduce the volume of the electro-optical material through which the lateral electric field passes.

Here, particularly in the present invention, unlike the above-described first method of manufacturing the electro-optical device of the present invention, the etch-back step is directly performed on the convex portion without providing the flattening film. Even with such a method, if the etchback step is carried out under appropriate conditions, as in the case of the first electro-optical device manufacturing method of the present invention described above, the convex portion having a gentle step is formed. Can be formed. For example, considering a case where the etch back process is realized by wet etching using an appropriate etchant, in the wet etching, the etching progresses faster at the corners of the convex portion, which becomes the basis of the convex portion. Since the flat portion and the side wall of the convex portion intersect, so to speak, the etching will proceed more slowly to other portions such as a recessed portion,
Etching that naturally rounds the corners of the convex portion progresses, so that the convex portion having a gentle step can be formed. The etching progresses faster at the corners and slower at the other parts because the etchant can contact the corners from all directions, but not at the other parts.

Therefore, according to the present invention as well, it is possible to effectively prevent the malfunction of the electro-optical device such as the defective alignment of the liquid crystal.

Further, according to such a method, the manufacturing cost can be reduced because the step of forming the flattening film can be omitted. However, according to such a manufacturing method, since the convex portion having a gentle step must be formed only by the etchback step, the condition setting of the etchback step is generally more subtle than that in the case of providing the planarizing film. It will be difficult. In this respect, in the above-described first method for manufacturing an electro-optical device of the present invention, such a delicate and difficult condition setting is unnecessary, so that it is possible to more easily form a convex portion having a gentle step. You can say that.

As described above, it can be considered that the first manufacturing method of the present invention and the second manufacturing method of the present invention are separate inventions each exhibiting unique effects.

The present invention is not particularly limited as to how the etch back process is specifically defined. For example, as the etching method, in addition to the above-described wet etching, dry etching may be performed in some cases, or depending on the etching method, for example, setting of etching time, selection of etchant (wet etching Basically, it is also possible to make appropriate adjustments such as (in case). These items can be appropriately determined by experiment, empirical, theoretical, simulation, or the like.

In order to solve the above problems, the first electro-optical device of the present invention comprises an electro-optical material sandwiched between a pair of first and second substrates, and the first electro-optical device is provided on the first substrate. A plurality of pixels arranged in a plane and including a first pixel electrode group for inversion driving in a cycle and a second pixel electrode group for inversion driving in a second cycle complementary to the first cycle. An electrode, a wiring and an element for driving the pixel electrode, and a convex portion formed in a region which is a gap between the pixel electrodes adjacent to each other in plan view on the upper layer side of the wiring and the element, A counter electrode facing the plurality of pixel electrodes is provided on a substrate, and the convex portion removes a planarizing film once formed on the convex portion by etching, and exposes a surface of the convex portion exposed after the removal. It consists of a convex portion with a gentle surface step, which is formed by receding.

According to the first electro-optical device of the present invention, there is a horizontal gap between adjacent pixel electrodes belonging to different pixel electrode groups (that is, adjacent pixel electrodes to which a potential of opposite polarity is applied). Although an electric field is generated, the edge portions of the pixel electrodes located in or adjacent to the non-opening area of each pixel are positively formed by etching, so that the edge portions of the pixel electrodes are first formed. If it is formed so as to be located on this convex portion, the vertical electric field generated between each pixel electrode and the counter electrode is relatively strengthened as compared with the horizontal electric field generated between the pixel electrodes adjacent to each other. Secondly, regardless of whether or not the edge of each pixel electrode is located on this convex portion, the lateral electric field generated between the adjacent pixel electrodes depends on the dielectric constant of the convex portion due to the presence of the convex portion. The action of the lateral electric field on the electro-optical material can also be reduced by reducing the volume of the electro-optical material that is weakened and through which the lateral electric field passes. Therefore, it is possible to reduce the malfunction of the electro-optical material such as the alignment failure of the liquid crystal due to the lateral electric field due to the inversion driving method. At this time, as described above, the edge portion of the pixel electrode may or may not be located on the convex portion, and may be located in the middle of the inclined or substantially vertical side surface of the convex portion. Good.

In addition, since the light-shielding film for hiding the malfunctioning portion of the electro-optical material can be made small, it is possible to increase the aperture ratio of each pixel without causing image defects such as light leakage.

Further, in the present invention, in particular, since the convex portion having a gentle step is formed, it is possible to cause a malfunction of the electro-optical device such as a liquid crystal alignment defect due to the step near the convex portion. It can be effectively prevented. In particular, when the alignment film formed on the pixel electrode is subjected to rubbing treatment, if the step of the convex portion is gentle, the rubbing can be performed comparatively easily and satisfactorily, resulting in poor alignment of the liquid crystal. It is possible to very effectively prevent malfunction of the electro-optical material such as.

As a result of the above, the malfunction due to the lateral electric field in the electro-optical material such as liquid crystal can be surely reduced by forming the convex portion, and the formation of the convex portion causes the malfunction due to the step in the electro-optical material such as liquid crystal. It is possible to suppress the occurrence of noise by a gentle step, and it is possible to realize an electro-optical device such as a liquid crystal device that displays a bright, high-quality image with high contrast.

The first electro-optical device of the present invention can also adopt various aspects corresponding to the various aspects of the method of manufacturing the first electro-optical device of the present invention described above. Further, the present invention can be applied to electro-optical devices of various types such as a transmissive type and a reflective type.

In order to solve the above-mentioned problems, the second electro-optical device of the present invention comprises an electro-optical substance sandwiched between a pair of first and second substrates, and the first electro-optical device is provided on the first substrate. A plurality of pixels arranged in a plane and including a first pixel electrode group for inversion driving in a cycle and a second pixel electrode group for inversion driving in a second cycle complementary to the first cycle. An electrode, a wiring and an element for driving the pixel electrode, and a convex portion formed in a region which is a gap between the pixel electrodes adjacent to each other in plan view on the upper layer side of the wiring and the element, A counter electrode facing the plurality of pixel electrodes is provided on the substrate, and the convex portion is a convex portion having a gentle surface step, which is formed by receding the surface of the convex portion by etching.

According to the second electro-optical device of the present invention, similarly to the above-described first electro-optical device, the convex portion is positively formed in the region which becomes the gap between the adjacent pixel electrodes. There is no change. Therefore, if the edge portion of the pixel electrode is formed so as to be located on the convex portion, the vertical electric field between the pixel electrode and the counter electrode can be strengthened, and the edge portion of the pixel electrode can be located on the convex portion. Regardless of whether they are located or not, it is possible to weaken the lateral electric field between adjacent pixel electrodes according to the dielectric constant of the convex portion and reduce the volume of the electro-optical material through which the lateral electric field passes.

In the present invention, in particular, unlike the above-described first electro-optical device of the present invention, the convex portion has a gentle step by directly etching the convex portion. Has been formed. As a result, the convex portion is
Since it will be formed without providing a flattening film,
It is possible to suppress the cost when manufacturing the electro-optical device of the present invention, and it is possible to provide this at a lower cost.

The operational effects of the gentle convex portion itself are the same as those of the above-described first electro-optical device of the present invention.

Further, also in the second electro-optical device of the present invention, the above-described method of manufacturing the second electro-optical device of the present invention can be adopted. Further, the present invention can be applied to electro-optical devices of various types such as a transmissive type and a reflective type.

In order to solve the above-mentioned problems, the electronic equipment of the present invention is equipped with the above-mentioned electro-optical device of the present invention (however, including its various aspects).

Since the electronic apparatus of the present invention comprises the above-described electro-optical device of the present invention, a projection display device, a liquid crystal television, a mobile phone, which can display a bright and high-quality image,
Various electronic devices such as an electronic notebook, a word processor, a viewfinder type or a monitor direct-viewing type video tape recorder, a workstation, a videophone, a POS terminal, and a touch panel can be realized.

The operation and other advantages of the present invention will be apparent from the embodiments described below.

[0066]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. The following embodiments apply the electro-optical device of the present invention to a liquid crystal device.

(Electro-Optical Device) First, an embodiment of the electro-optical device of the present invention will be described with reference to FIGS. 1 to 6. FIG. 1 is an equivalent circuit of various elements, wirings, and the like in a plurality of pixels that are formed in a matrix and form an image display area of an electro-optical device. FIG. 2 is a plan view of a plurality of pixel groups adjacent to each other on a TFT array substrate on which data lines, scanning lines, pixel electrodes, etc. are formed. FIG. 3 shows A- of FIG.
FIG. 4 is a sectional view taken along the line A ′, and FIG. 4 is a sectional view taken along the line BB ′ of FIG. 2. FIG. 5 is a schematic plan view of a pixel electrode showing a voltage polarity and a region where a lateral electric field is generated in each electrode in the 1H inversion driving method used in the present embodiment. FIG. 6 is a schematic plan view of a pixel electrode showing a voltage polarity and a region where a lateral electric field is generated in each electrode in the 1S inversion driving method used in the modification. In FIGS. 3 and 4, the scales of the layers and members are different from each other in order to make the layers and members recognizable in the drawings.

In FIG. 1, a pixel electrode 9a and a TFT 30 for controlling switching of the pixel electrode 9a are respectively provided in a plurality of pixels which are formed in a matrix and constitute an image display area of the electro-optical device according to the present embodiment. Are formed, and the data line 6a to which the image signal is supplied is electrically connected to the source of the TFT 30. The image signals S1, S2, ..., Sn to be written to the data line 6a may be line-sequentially supplied in this order, or may be supplied to each of a plurality of adjacent data lines 6a in groups. Good. In addition, the scanning line 3 is connected to the gate of the TFT 30.
a is electrically connected, and the scanning signals G1, G2, ..., Gm are pulsed to the scanning line 3a at a predetermined timing.
Is applied line-sequentially in this order.
The pixel electrode 9a is electrically connected to the drain of the TFT 30, and by closing the switch of the TFT 30 which is a switching element for a certain period, the data line 6
The image signals S1, S2, ..., Sn supplied from a are written at a predetermined timing. The image signals S1, S2, ..., Sn having a predetermined level written in the liquid crystal as an example of the electro-optical material via the pixel electrode 9a are held for a certain period of time with the counter electrode formed on the counter substrate described later. It The liquid crystal modulates light by changing the orientation and order of the molecular assembly depending on the applied voltage level, and enables gradation display. In the normally white mode, the transmittance for incident light is reduced according to the voltage applied in each pixel unit, and in the normally black mode, the incident light is incident according to the voltage applied in each pixel unit. The transmittance for light is increased, and light having a contrast corresponding to the image signal is emitted from the electro-optical device as a whole. Here, in order to prevent the held image signal from leaking, the pixel electrode 9a
A storage capacitor 70 is added in parallel with the liquid crystal capacitor formed between the counter electrode and the counter electrode.

In FIG. 2, a plurality of transparent pixel electrodes 9 are arranged in a matrix on the TFT array substrate of the electro-optical device.
a (the outline is shown by the dotted line portion 9a '), and the data line 6a and the scanning line 3a are provided along the vertical and horizontal boundaries of the pixel electrode 9a.

In the semiconductor layer 1a, the scanning line 3a is arranged so as to face the channel region 1a 'shown by the hatched region in the upper right of FIG. 2, and the scanning line 3a includes a gate electrode. The scanning line 3a has a wide gate electrode portion facing the channel region 1a '.

As described above, at the intersections of the scanning lines 3a and the main line portions 61a of the data lines 6a, a part of the scanning lines 3a is arranged as a gate electrode in the channel region 1a ', respectively, for pixel switching. A TFT 30 is provided.

As shown in FIGS. 2 to 4, the pixel electrode 9a
In the third interlayer insulating film 43 forming the underlayer surface of the above, convex portions 402 having a gentle step due to a manufacturing process unique to the invention of the present application to be described later are formed in a stripe shape in the horizontal direction in FIG. 2, that is, along the scanning line 3a. Is formed in. Regarding the configuration and the effect of the convex portion 402 configured in this way,
Further details will be given later with reference to FIGS. 5 and 6.

The storage capacitor 70 includes a relay layer 71 as a pixel potential side capacitance electrode connected to the high concentration drain region 1e of the TFT 30 and the pixel electrode 9a, and a part of the capacitance line 300 as a fixed potential side capacitance electrode. , Are formed so as to face each other with the dielectric film 75 interposed therebetween.

The capacitance line 300 is made of a conductive light-shielding film containing, for example, a metal or an alloy, constitutes an example of the upper light-shielding film (built-in light-shielding film), and also functions as a fixed potential side capacitance electrode. The capacitance line 300 is made of, for example, Ti (titanium) or Cr.
(Chrome), W (tungsten), Ta (tantalum),
It is composed of a simple metal, an alloy, a metal silicide, a polysilicide, or a stack of these containing at least one refractory metal such as Mo (molybdenum). Capacity line 3
00 may include other metals such as Al (aluminum) and Ag (silver). However, alternatively, the capacitance line 300 may have a multilayer structure in which a first film made of, for example, a conductive polysilicon film and a second film made of a metal silicide film containing a refractory metal are stacked.

On the other hand, the relay layer 71 is made of, for example, a conductive polysilicon film and functions as a pixel potential side capacitance electrode. The relay layer 71 has a function as a pixel potential side capacitive electrode, and also has a function as another example of a light absorption layer or an upper light shielding film, which is arranged between the capacitance line 300 as the upper light shielding film and the TFT 30. Further, it has a function of relay-connecting the pixel electrode 9a and the high-concentration drain region 1e of the TFT 30.
However, the relay layer 71 may also be formed of a single layer film or a multilayer film containing a metal or an alloy, like the capacitance line 300.

The capacitance line 300 is viewed in plan, and the scanning line 3a
2 extends in a stripe shape, and a portion overlapping the TFT 30 projects vertically in FIG. The data lines 6a extending in the vertical direction in FIG. 2 and the capacitance lines 300 extending in the horizontal direction in FIG. 2 are formed so as to intersect each other, so that the TFT lines on the TFT array substrate 10 are planarly arranged above the TFTs 30. A lattice-shaped upper light-shielding film (built-in light-shielding film) is formed, and defines the opening region of each pixel.

TFT3 on TFT array substrate 10
On the lower side of 0, the lower light-shielding film 11a is provided in a grid pattern. The lower light-shielding film 11a is made of, for example, Ti or C, like the capacitance line 300 that constitutes an example of the upper light-shielding film as described above.
It is composed of a simple metal, an alloy, a metal silicide, a polysilicide, or a stack of these containing at least one of refractory metals such as r, W, Ta, and Mo. Alternatively,
It comprises other metals such as Al and Ag.

The relay layer 71 as a capacitance electrode and the capacitance line 30
The dielectric film 75 disposed between the dielectric film 75 and
Relatively thin HTO of about 200 nm (nanometer)
(High Temperature Oxide) film, LTO (Low Temperatu)
re Oxide) film or the like, or a silicon nitride film or the like. From the viewpoint of increasing the storage capacitance 70, the thinner the dielectric film 75 is, the better as long as the reliability of the film is sufficiently obtained.

Further, the capacitance line 300 extends from the image display area where the pixel electrode 9a is arranged to the periphery thereof and is electrically connected to the constant potential source to have a fixed potential. As the constant potential source, a scanning line driving circuit described later for supplying a scanning signal for driving the TFT 30 to the scanning line 3a and a data line driving described later for controlling a sampling circuit supplying an image signal to the data line 6a. A constant potential source such as a positive power source or a negative power source supplied to the circuit may be used, or the counter electrode 21 of the counter substrate 20 may be used.
It may be a constant potential supplied to. Furthermore, the lower light-shielding film 1
As for the capacitor 1a, in order to avoid the potential variation from adversely affecting the TFT 30, the capacitor 1a may be extended from the image display region to the periphery thereof and connected to a constant potential source, like the capacitor line 300.

The pixel electrode 9a is electrically connected to the high concentration drain region 1e of the semiconductor layer 1a through the contact holes 83 and 85 by relaying the relay layer 71. That is, in this embodiment, the relay layer 71 functions as the pixel electrode 9 a of the TFT 30 in addition to the function as the pixel potential side capacitance electrode of the storage capacitor 70 and the function as the light absorption layer.
Performs the function of relay connection to. By using the relay layer 71 as described above, even if the interlayer distance is as long as about 2000 nm, for example, it is possible to improve the contact hole and the groove between the both while avoiding the technical difficulty of connecting them with one contact hole. Connection can be made, the pixel aperture ratio can be increased, and it is also useful for preventing penetration of etching when a contact hole is opened.

As shown in FIGS. 3 and 4, the electro-optical device includes a transparent TFT array substrate 10 and a transparent counter substrate 20 arranged to face the TFT array substrate 10. The TFT array substrate 10 is made of, for example, a quartz substrate, a glass substrate, or a silicon substrate, and the counter substrate 20 is made of, for example, a glass substrate or a quartz substrate.

The pixel electrode 9a is formed on the TFT array substrate 10.
Is provided, and an alignment film 16 subjected to a predetermined alignment treatment such as a rubbing treatment is provided on the upper side thereof.
The pixel electrode 9a is made of, for example, a transparent conductive film such as an ITO (Indium Tin Oxide) film. The alignment film 16 is made of, for example, an organic film such as a polyimide film.

On the other hand, the counter substrate 20 is provided with a counter electrode 21 over the entire surface thereof, and an alignment film 22 subjected to a predetermined alignment treatment such as rubbing treatment is provided below the counter electrode 21. There is. The counter electrode 21 is made of, for example, a transparent conductive film such as an ITO film. The alignment film 22 is made of an organic film such as a polyimide film.

The counter substrate 20 may be provided with a light shielding film having a lattice shape or a stripe shape. By adopting such a configuration, as described above, the light shielding film on the counter substrate 20 together with the capacitance line 300 and the data line 6a forming the upper light shielding film causes incident light from the counter substrate 20 side to be incident on the channel region 1a ′ and It is possible to more reliably prevent entry into the low-concentration source region 1b and the low-concentration drain region 1c. Furthermore,
Such a light-shielding film on the counter substrate 20 is formed of a highly reflective film on at least the surface irradiated with incident light,
It works to prevent the temperature rise of the electro-optical device.

Between the TFT array substrate 10 and the counter substrate 20, which are arranged in such a manner that the pixel electrode 9a and the counter electrode 21 face each other, a space surrounded by a sealing material described later is provided. A liquid crystal, which is an example of an electro-optical material, is encapsulated to form a liquid crystal layer 50. The liquid crystal layer 50 is formed on the alignment film 1 in a state where the electric field from the pixel electrode 9a is not applied.
A predetermined alignment state is obtained by 6 and 22. Liquid crystal layer 50
Is composed of, for example, a liquid crystal in which one kind or several kinds of nematic liquid crystals are mixed. The sealing material is used for bonding the TFT array substrate 10 and the counter substrate 20 around their periphery,
For example, it is an adhesive made of a photocurable resin or a thermosetting resin, and a gap material such as glass fiber or glass beads for mixing the distance between both substrates to a predetermined value is mixed.

Further, the underlying insulating film 12 is provided below the pixel switching TFT 30. Base insulating film 1
2 has a function of insulating the TFT 30 from the lower light-shielding film 11a between layers, and is formed on the entire surface of the TFT array substrate 10, so that the surface of the TFT array substrate 10 is roughened during polishing, and remains after cleaning. Pixel switching T
It has a function of preventing deterioration of the characteristics of the FT 30.

In FIG. 3, a pixel switching TFT
Reference numeral 30 denotes an LDD (Lightly Doped Drain) structure, and the scanning line 3a and the channel region 1 of the semiconductor layer 1a in which a channel is formed by an electric field from the scanning line 3a.
a ′, an insulating film 2 including a gate insulating film that insulates the scanning line 3a from the semiconductor layer 1a, a low-concentration source region 1b and a low-concentration drain region 1c of the semiconductor layer 1a, a high-concentration source region 1d of the semiconductor layer 1a, and a high-concentration source region 1d. It has a concentration drain region 1e.

A high concentration source region 1d is formed on the scanning line 3a.
A first interlayer insulating film 41 is formed in which a contact hole 81 leading to and a contact hole 83 leading to the high-concentration drain region 1e are opened.

The relay layer 71 and the capacitance line 300 are formed on the first interlayer insulating film 41, and the second interlayer insulating film 42 in which the contact holes 81 and 85 are opened is formed thereon. Has been done.

The data line 6a is formed on the second interlayer insulating film 42, and the third interlayer insulating film 43 in which the contact hole 85 leading to the relay layer 71 is formed thereon.
Are formed. The pixel electrode 9a is provided on the upper surface of the third interlayer insulating film 43 thus configured.

Here, with reference to FIG. 2 to FIG. 6, the structure and effect of the convex portion 402 formed on the third interlayer insulating film 43 will be described.

In the electro-optical device of this embodiment, the pixel electrodes 9a adjacent to each other in the vertical direction in FIG. 2 (that is, the pixel electrodes 9a adjacent to each other to which a potential of opposite polarity is applied) are
The convex portions 402 extending in a stripe shape in the lateral direction are formed on the third interlayer insulating film 43 which is a base layer of the pixel electrode 9a.

In the present embodiment having such a convex portion 402, 1H of the various conventional inversion driving methods described above is used.
Driving is performed using the inversion driving method. As a result, it is possible to display an image with reduced flicker that occurs in the frame or field period and especially with reduced vertical crosstalk while avoiding deterioration of the liquid crystal due to application of a DC voltage.

Referring to FIG. 5, the pixel electrodes 9 adjacent to each other in the 1H inversion driving method adopted in this embodiment.
The relationship between the voltage polarity of a and the generation region of the horizontal electric field will be described.

That is, as shown in FIG. 5A, during the period for displaying the image signal of the n-th (where n is a natural number) field or frame, the liquid crystal indicated by + or-for each pixel electrode 9a. The polarity of the drive voltage is not inverted, and the pixel electrodes 9a are driven with the same polarity for each row. Thereafter, as shown in FIG. 5B, when displaying the image signal of the (n + 1) th field or one frame, the voltage polarity of the liquid crystal drive voltage in each pixel electrode 9a is inverted, and the (n + 1) th field or one frame of During the period in which the image signal is displayed, the polarity of the liquid crystal drive voltage indicated by + or − is not inverted for each pixel electrode 9a, and the pixel electrode 9a is driven with the same polarity for each row. Then, the states shown in FIGS. 5A and 5B are repeated at a cycle of one field or one frame, and the driving by the 1H inversion driving method in the present embodiment is performed. As a result, according to this embodiment, it is possible to perform image display with reduced crosstalk and flicker while avoiding deterioration of the liquid crystal due to application of a DC voltage. The 1H inversion driving method is advantageous in that there is almost no vertical crosstalk as compared with the 1S inversion driving method.

As can be seen from FIGS. 5 (a) and 5 (b), in the 1H inversion driving method, the lateral electric field generation region C1 is always a gap between the pixel electrodes 9a adjacent to each other in the vertical direction (Y direction). It will be in the vicinity.

Therefore, as shown in FIGS. 3 and 4, in the present embodiment, the convex portion 402 is formed, and the vertical electric field near the edge of the pixel electrode 9a arranged on the convex portion 402 is strengthened and the lateral electric field is weakened. Of. More specifically, as shown in FIG. 4, the distance between the edge of the pixel electrode 9 a arranged on the convex portion 402 and the counter electrode 21 is narrowed by the height of the convex portion 402. Therefore, the horizontal electric field generation region C shown in FIG.
1, the vertical electric field between the pixel electrode 9a and the counter electrode 21 can be strengthened. And FIG.
Also, in FIG. 4, since the gap between the adjacent pixel electrodes 9a is constant, the magnitude of the lateral electric field that is strengthened as the gap is narrowed is also constant.

Therefore, the lateral electric field generation region C shown in FIG.
In No. 1, by making the vertical electric field more dominant, it is possible to prevent alignment failure of the liquid crystal due to the horizontal electric field. Further, the presence of the convex portion 402 made of an insulating film weakens the strength of the lateral electric field, and the convex portion 402 in which the lateral electric field exists.
Since the portion of the liquid crystal that receives the horizontal electric field is reduced by the amount replaced by, the action of the horizontal electric field on the liquid crystal layer 50 can be reduced.

As described above, according to this embodiment, focusing on the characteristics of the lateral electric field generated in the 1H inversion driving method,
In the horizontal electric field generation region C1, by providing the convex portion 402, the vertical electric field is relatively strengthened to reduce the adverse effect of the horizontal electric field. Therefore, by reducing the liquid crystal misalignment due to the horizontal electric field, the light-shielding film for hiding the liquid crystal misalignment can be made small (however, the liquid crystal misalignment caused by the step in the convex portion 402 can be covered). Therefore, it is desirable to set the width of the light shielding film to be slightly wider than the width of the convex portion 402). Therefore, the aperture ratio of each pixel can be increased without causing an image defect such as light leakage, and finally a high-contrast, bright and high-quality image can be displayed.

Especially according to this embodiment, the convex portion 40
As shown in FIGS. 3 and 4, the step 2 is a gentle step near the edge of the opening region of each pixel. Therefore,
The liquid crystal layer 50 caused by the step difference is caused by the loosened portion.
Can be reduced. For example, in a convex portion formed by normal patterning, the side wall thereof stands up at a substantially right angle, and a discontinuous surface is generated in the liquid crystal layer 50, which causes alignment failure of the liquid crystal layer 50. is there.

As a result, both the malfunction of the liquid crystal layer 50 due to the lateral electric field and the malfunction of the liquid crystal layer 50 due to the step can be reduced in a well-balanced manner, and a bright, high-quality image display with high contrast can be performed. A liquid crystal device can be realized. In particular, when the alignment film 16 formed on the pixel electrode 9a is subjected to a rubbing process, since the step of the convex portion 402 is gentle, the rubbing can be performed relatively easily and satisfactorily, resulting in poor alignment of the liquid crystal. It can be very effectively prevented.

In the present embodiment, as shown in FIG. 4, at the edge of the convex portion 402 extending in the longitudinal direction on the widthwise edge of the upper surface,
It is preferable that the edge of the pixel electrode 9a is located. With this configuration, the pixel electrode 9 at the edge is
The distance between a and the counter electrode 21 can be shortened by making maximum use of the height of the convex portion 402. At the same time, the convex portion 4
By maximizing the width of the upper surface of 02, the space between adjacent pixel electrodes 9a where a lateral electric field is generated can be widened. As a result, the shape of the convex portion 402 can be used extremely efficiently, and the vertical electric field can be strengthened with respect to the horizontal electric field in the horizontal electric field generation region C1.

The cross-sectional shape of the above-mentioned convex portion 402 cut perpendicularly to its longitudinal axis is, for example, a trapezoid, a triangle, a semicircle, a semi-elliptical shape, a semi-circular or semi-elliptical diameter with a flat top portion, or Various shapes such as a quadratic curve or a cubic curve having a substantially trapezoidal shape or a substantially triangular shape in which the slope of the side edge gradually increases toward the top can be considered. Regardless of the cross-sectional shape, it is preferable to appropriately adopt a cross-sectional shape in which the step difference of the convex portion 402 is made gentle and the alignment defect of the liquid crystal caused by the step difference is small according to the property of the liquid crystal.

As a modification of this embodiment, the relationship between the voltage polarities of the pixel electrodes 9a adjacent to each other and the lateral electric field generation region C2 is shown in FIG. When the polarity of the drive voltage changes, a lateral electric field generation region C
2 is a gap between pixels along the data line 6a), in the configuration shown in FIGS.
The convex portion may be formed in the lateral electric field generation region C2, that is, in the form of a stripe extending in the vertical direction along the data line 6a.

Alternatively, as a modification of this embodiment, the polarity of the liquid crystal driving voltage is changed for each column and each row by the dot inversion driving method (that is, the generation region of the horizontal electric field is the data line 6).
a) and a method of forming a gap between pixels along the scanning line 3a), in the configuration shown in FIG. 2 to FIG.
The convex portions may be formed in a lattice shape along both the scanning lines 3a and the data lines 6a.

In addition, in the 1H inversion driving method according to the present invention, the polarity of the driving voltage may be inverted row by row,
You may invert every two lines which adjoin each other, or every several lines. Similarly, in the 1S inversion driving method according to the present invention, the polarity of the driving voltage may be inverted for each column, or may be inverted for every two columns adjacent to each other or for every plural columns. Alternatively, the polarity of the drive voltage may be inverted for each block including a plurality of pixel electrodes.

In the embodiments described above, the pixel switching TFT 30 is of the top gate type, but may be of the bottom gate type. in addition,
The TFT 30 may be configured to include a single crystal semiconductor layer made of bonded SOI.

In the embodiment described above, the relay layer 71 including the pixel potential side capacitance electrode is below the dielectric film 75,
The capacitance line 300 including the capacitance electrode on the fixed potential side is the dielectric film 75.
Although it is on the upper side, the vertical relationship may be reversed, or the pixel potential side capacitance electrode may be sandwiched between two fixed potential side capacitance electrodes from above and below.

In the embodiment described above, the switching TFT 30 is preferably the LDD as shown in FIG.
Although it has a structure, it may have an offset structure in which the low-concentration source region 1b and the low-concentration drain region 1c are not implanted with the impurity ions. It is also possible to use a self-alignment type TFT in which the high concentration source and drain regions are formed in a self-aligned manner by implanting. Further, in the present embodiment, the gate electrode of the TFT 30 for pixel switching has a single gate structure in which only one gate electrode is arranged between the high-concentration source region 1d and the high-concentration drain region 1e, but two or more gate electrodes are provided between them. May be arranged.

Further, even when the present invention is applied to not only the projection type or transmission type liquid crystal device but also the reflection type liquid crystal device, the effect of reducing the alignment defect of the liquid crystal due to the horizontal electric field according to the present embodiment can be obtained similarly. To be

(Manufacturing Process) Next, a manufacturing process of the above-described electro-optical device will be described with reference to FIG. Here, FIG. 7 is a process drawing showing the cross-sectional structure at a position substantially corresponding to the BB ′ cross section shown in FIG. 4 for each process.

First, in the step shown in FIG. 7A, a substrate 10 such as a silicon substrate, a quartz substrate, or a glass substrate is prepared. Here, it is preferably about 850 to 1300 ° C., more preferably 1000 ° C., in an atmosphere of an inert gas such as N ₂ (nitrogen).
Annealing treatment is performed at a high temperature, and pretreatment is performed so that strain generated in the substrate 10 in a high temperature process performed later is reduced.

Then, a metal alloy film such as a metal such as Ti, Cr, W, Ta, Mo or a metal alloy such as a metal silicide is deposited on the entire surface of the substrate 10 thus treated by a sputtering method to a thickness of about 100 to 500 nm. After forming a light-shielding layer having a film thickness of, preferably about 200 nm, a lower light-shielding film 11a having a pattern as shown in FIG. 2 is formed in the image display region 10a by photolithography and etching.

Next, in the step of FIG. 7B, the lower light-shielding film 1
1a on top of 1a by, for example, atmospheric pressure or low pressure CVD
EOS (tetra-ethyl-ortho-silicate) gas,
TEB (Tetra-Ethyl-Borate) gas, TMO
A base insulating film 12 made of a silicate glass film such as NSG, PSG, BSG, or BPSG, a silicon nitride film, a silicon oxide film, or the like is formed by using P (tetramethyl oxyfoslate) gas or the like.

Then, a reduced pressure CV is formed on the base insulating film 12.
An amorphous silicon film is formed from D or the like and an annealing treatment is performed to solid-phase grow the polysilicon film. Alternatively, the polysilicon film is directly formed by the low pressure CVD method or the like without passing through the amorphous silicon film. Next, by subjecting this polysilicon film to a photolithography process, an etching process, etc., the semiconductor layer 1a having the predetermined pattern shown in FIG.
It is formed in a. Further, the insulating film 2 to be the gate insulating film is formed by thermal oxidation or the like (see FIG. 3). As a result, the thickness of the semiconductor layer 1a and the semiconductor layer 320 is about 30.
The thickness of the insulating film 2 is about 20 to 150 nm, preferably about 30 to 100 nm.

Then, a polysilicon film is deposited to a thickness of about 100 to 500 nm by a low pressure CVD method or the like, and P
(Phosphorus) is thermally diffused to make the polysilicon film conductive, and then the scanning line 3a having the predetermined pattern shown in FIG. 2 is formed in the image display region 10a by a photolithography process, an etching process, or the like. Next, by doping the impurity ions in two steps of low concentration and high concentration, the low concentration source region 1b and the low concentration drain region 1c, the high concentration source region 1d and the high concentration drain region 1e are included.
The semiconductor layer 1a of the pixel switching TFT 30 having the LDD structure is formed in the image display region 10a.

Next, in the step shown in FIG. 7C, for example, NSG or NSG is formed by using a normal pressure or low pressure CVD method or TEOS gas.
Silicate glass film such as PSG, BSG, BPSG,
A first interlayer insulating film 41 made of a silicon nitride film, a silicon oxide film or the like is formed. Then, by dry etching or wet etching or a combination thereof,
Contact holes 81, 83 and the like are formed in the first interlayer insulating film 41.

Subsequently, a polysilicon film is deposited by a low pressure CVD method or the like, and phosphorus (P) is further thermally diffused to make the polysilicon film conductive and form a relay layer 71. Further, a dielectric film 7 made of a high temperature silicon oxide film (HTO film) or a silicon nitride film is formed by a low pressure CVD method, a plasma CVD method or the like.
After depositing 5 in a relatively thin thickness of about 50 nm,
The capacitance line 300 is formed by sputtering a metal such as Ti, Cr, W, Ta, or Mo or a metal alloy film such as metal silicide.
To form. With these, in the image display area 10a,
The storage capacitor 70 is formed.

Then, for example, a normal pressure or low pressure CVD method or T
NSG, PSG, BSG, BP using EOS gas etc.
An interlayer insulating film 42 made of a silicate glass film such as SG, a silicon nitride film, a silicon oxide film, or the like is formed.

Next, in the step of FIG. 7D, after the contact hole 81 is opened by dry etching such as reactive ion etching or reactive ion beam etching for the second interlayer insulating film 42, the second interlayer insulating film 42 is formed. Approximately 100 is formed on the entire surface of the film 42 by sputtering or the like by using a low resistance metal such as Al having a light shielding property or a metal silicide as a metal film.
Deposit ~ 500 nm thick, preferably about 300 nm. Then, the data line 6a having a predetermined pattern is formed in the image display region 10a by photolithography and etching (see FIGS. 2 and 3).

Then, for example, a normal pressure or low pressure CVD method or T
NSG, PSG, BSG, BP using EOS gas etc.
A third interlayer insulating film 43S made of a silicate glass film such as SG, a silicon nitride film, a silicon oxide film, or the like is formed. At this stage, the convex portion 402S having a steeply angled step or side wall is formed from the third interlayer insulating film 43S.

Convex portion 402 having such a steep step
S is the storage capacitor 70 and the scanning line 3a existing on the base side.
It may be formed by utilizing the presence of. Alternatively, instead of or in addition to this, the interlayer insulating film may be patterned. In this case, if the interlayer insulating film is planarized once by, for example, a CMP process or the like and then patterned, the third interlayer insulating film 43 having a convex portion of a desired shape is formed.
Can be formed relatively easily. Alternatively, the convex portion 402S having such a steep step may be formed at least partially by forming a groove having a predetermined pattern in the substrate 10, the first interlayer insulating film 41, or the like.

Next, in the step of FIG. 7E, the flattening film 600 is formed on the third interlayer insulating film 43S.

The step of forming the flattening film 600 may be performed by applying a fluid resist. Further, the resist thus coated may be subjected to a baking treatment to increase the flatness. Alternatively,
The step of forming the flattening film 600 may be formed as an SOG film by spin coating.

On the surface of the flattening film 600 thus formed, a gentle step shape is obtained as compared with the convex portion 402S.

Next, in the step of FIG. 7F, the flattening film 600 thus formed is removed by etching, and the surface of the third interlayer insulating film 43S exposed by this removal is receded by etching. That is, the third interlayer insulating film 43S is subjected to the etch back process, and the flattening film 6 is formed.
The convex portion 4 in which the shape of the gentle convex portion 402S of 00 is transferred
A third interlayer insulating film 43 having No. 02 is formed.

This etch-back process is preferably performed by the etching rate of the material forming the flattening film 600 and the third
The etching is performed so that the etching rates of the materials forming the interlayer insulating film 43S coincide with each other. For example, it is preferable to perform the etching so that the etching selection ratio for both films is within a range of about ± 10%. If manufactured in this way, the convex portions 4 formed on the flattening film 600 with gentle steps are formed.
The shape of 02S can be transferred to the convex portion 402 by etching back with almost the same shape.

However, this etchback process may be performed so that the etching rate of the material forming the flattening film 600 and the etching rate of the material forming the third interlayer insulating film 43S are different from each other. If manufactured in this way,
The convex portion 402 having a gentle step formed on the flattening film 600
The convex portion 402 having a shape slightly different from the shape of S can be formed.

In either case, the etching is stopped by controlling the time, or the etching is stopped by detecting it by using an appropriate stopper, so that the convex portion 402 having a gentle step with a predetermined shape is formed on the pixel electrode 9a. It is formed on the underlying third interlayer insulating film 43.

Subsequently, by dry etching such as reactive ion etching or reactive ion beam etching on the third interlayer insulating film 43, a contact hole 85 (see FIG. 3) reaching the relay layer 71 is formed, and a sputtering process or the like is performed. Then, an ITO film is formed by, and the pixel electrode 9a is formed by performing photolithography and etching. After that, a coating liquid of a polyimide-based alignment film is applied on the alignment film 16 and then a rubbing treatment is performed in a predetermined direction so as to have a predetermined pretilt angle.
Is formed.

During the rubbing process, since the step of the convex portion 402 is gentle, the rubbing process can be satisfactorily performed even at a portion where the rubbing is rubbed up, particularly at a portion where the rubbing is rubbed down.

After forming the third interlayer insulating film 402 by the etch back process, a protective film such as an oxide film or a nitride film may be formed on the entire surface thereof. This allows
The reliability of the device can be maintained by the protective film even if the surface is roughened by the etch back treatment, or a defect or a pinhole is generated.

When the electro-optical device is used as a reflective type, the pixel electrode 9a may be formed of an opaque material having a high reflectance such as Al instead of ITO.

By the series of manufacturing processes described above,
TFT configuring the electro-optical device according to the first embodiment described above
The array substrate 10 can be manufactured relatively easily.

As described above, according to the manufacturing method of the present embodiment, in the step (f) of FIG. 7, the etching back step is performed using the flattening film 600 having a step with a gentle surface. The stepped convex portion 402 can be formed in the base layer of the pixel electrode 9a. As a result, the malfunction of the liquid crystal due to the lateral electric field can be surely reduced by forming the convex portion 402, and furthermore, the formation of the convex portion 402 can effectively suppress the occurrence of the defective alignment due to the step in the liquid crystal.

In the manufacturing method of the above embodiment, the process shown in FIG.
The flattening film 600 was formed in the step (e) of FIG. 7 and the etch back step was performed on the flattening film 600 in the step (f) of FIG. , The third interlayer insulating film 43 without forming the planarizing film 600.
The etchback step may be directly performed on S or the convex portion 402S.

As such an etch back step, it is preferable to carry out wet etching using an appropriate etchant. By doing so, as shown in the step (e ′) of FIG. 8 following the step (d) of FIG. 7, the etching progress speed at the corner portion 402SE of the convex portion 402S is set to the other portion, for example, Specifically, the speed can be made faster than that in a recessed portion 402SX, which is a so-called recessed portion where the flat surface portion 43SP of the third interlayer insulating film 43S which is the basis of the convex portion and the side wall 402SS of the convex portion 402S intersect. This is because the etchant progresses faster with respect to the corner portion 402SE because the etchant can come in contact with it from all directions, but it is not so in the other portions (the arrow shown in the figure indicates , Which conceptually shows the flow of the etchant.)

As described above, even if the flattening film 600 is not formed, the convex portion 402 having a gentle step can be formed naturally.

Further, according to such a method, the manufacturing cost can be reduced because the step of forming the flattening film 600 can be omitted. However, according to such a manufacturing method, since the convex portion 402 having a gentle step must be formed only by the etch-back process, the condition setting of the etch-back process is generally subtle as compared with the case where the planarization film is provided. And it will be difficult. In this respect, in the above-described embodiment, such a delicate and difficult condition setting is not necessary, so it can be said that the convex portion 402 can be formed more easily. As described above, it can be considered that each of the modes in which the flattening film 600 is provided and the mode in which the flattening film 600 is not provided has unique effects.

Here, the relationship between the inclination of the side surface of the convex portion 402 and the rubbing direction will be described with reference to FIG.

As shown in FIG. 9A, the liquid crystal molecules 50a forming the liquid crystal layer 50 are subjected to a rubbing treatment in the left-right direction in the figure, and an alignment film surface-treated so as to give a predetermined pretilt angle. 16 has a predetermined orientation state.
Then, by applying an electric field according to the image signal, each liquid crystal molecule 50a rotates to the position shown by the broken line in the figure.

At this time, as shown in FIG. 9B, the liquid crystal molecules 50a forming the liquid crystal layer 50 have a convex portion on the lower ground of the alignment film 16 which gives an inclination 301 in a direction intersecting the rubbing direction. The alignment state of the liquid crystal molecules 50a is disturbed at this inclined portion. Further, as shown in FIG. 9C, when there is a convex portion that gives a steeper slope 301 ′, the disorder of the alignment state of the liquid crystal molecules 50a becomes noticeable.

Therefore, as shown in the step (f) of FIG. 4 and FIG. 7 described above, by forming the convex portion 402 having a gentle step, the misalignment of the liquid crystal molecules 50c due to the step can be reduced. This is advantageous. Further, even if the steps are the same, if the rubbing process is performed in the direction parallel to the steps, the disturbance of the alignment state of the liquid crystal molecules 50c due to the steps is reduced. Therefore, in the present embodiment, the TFT array substrate 10
It is advantageous to perform a rubbing treatment on the side alignment film 16 along the direction of the step due to the stripe-shaped convex portion 402.

(Overall Configuration of Electro-Optical Device) The overall configuration of the electro-optical device in each of the above-described embodiments will be described with reference to FIGS. 10 and 11. Incidentally, FIG.
[Fig. 11] is a plan view of the TFT array substrate 10 together with the constituent elements formed thereon as seen from the counter substrate 20 side, and Fig. 11 is a HH 'sectional view of Fig. 10.

In FIG. 10, a sealing material 52 is provided on the TFT array substrate 10 along the edge thereof, and in parallel with the inside thereof, light shielding as a frame for defining the periphery of the image display area 10a. A membrane 53 is provided. In an area outside the sealing material 52, a data line driving circuit 101 for driving the data line 6a by supplying an image signal to the data line 6a at a predetermined timing and an external circuit connecting terminal 102 are provided along one side of the TFT array substrate 10. The scanning line driving circuit 1 that drives the scanning line 3a by supplying the scanning signal to the scanning line 3a at a predetermined timing.
04 are provided along two sides adjacent to this one side. It goes without saying that the scanning line driving circuit 104 may be provided on only one side if the delay of the scanning signal supplied to the scanning line 3a does not matter. In addition, the data line drive circuit 10
1 may be arranged on both sides along the side of the image display area 10a. Further, on the remaining side of the TFT array substrate 10, the scanning line driving circuit 10 provided on both sides of the image display area 10a.
A plurality of wirings 105 for connecting the four are provided. In addition, at least one corner of the counter substrate 20 is provided with a conductive material 106 for electrically connecting the TFT array substrate 10 and the counter substrate 20. Then, as shown in FIG. 11, the counter substrate 20 having substantially the same contour as the sealing material 52 shown in FIG. 10 is fixed to the TFT array substrate 10 by the sealing material 52.

On the TFT array substrate 10, in addition to the data line driving circuit 101, the scanning line driving circuit 104, etc., a sampling circuit for applying an image signal to a plurality of data lines 6a at a predetermined timing, Data line 6a
In addition, a precharge circuit for supplying a precharge signal of a predetermined voltage level prior to the image signal, an inspection circuit for inspecting the quality, defects, etc. of the electro-optical device during manufacturing or shipping may be formed. Good.

In the embodiments described above with reference to FIGS. 1 to 11, instead of providing the data line driving circuit 101 and the scanning line driving circuit 104 on the TFT array substrate 10, for example, a TAB (Tape Automated Bonding) substrate is used. The driving LSI mounted on the TFT array substrate 10 may be electrically and mechanically connected via an anisotropic conductive film provided in the peripheral portion of the TFT array substrate 10. Further, for example, TN (Twisted
Nematic) mode, STN (Super Twisted Nematic) mode, VA (Vertically Aligned) mode, PDLC (P
Olymer Dispersed Liquid Crystal) mode, etc., and depending on the normally white mode / normally black mode, polarizing film, retardation film,
A polarizing plate and the like are arranged in a predetermined direction.

Since the electro-optical device according to the above-described embodiment is applied to a projector, three electro-optical devices are used as RGB light valves, and each light valve has an RGB color separation dichroic. The light of each color separated through the mirror is incident as projection light. Therefore, in each embodiment, the counter substrate 20 is not provided with a color filter. However, an RGB color filter may be formed on the counter substrate 20 in a predetermined region facing the pixel electrode 9a together with its protective film. With this configuration, the electro-optical device according to each embodiment can be applied to a direct-view type or reflective type color electro-optical device other than the projector. Further, microlenses may be formed on the counter substrate 20 so as to correspond to each pixel. Alternatively, it is also possible to form a color filter layer with a color resist or the like under the pixel electrode 9a facing the RGB on the TFT array substrate 10. By doing so, a bright electro-optical device can be realized by improving the efficiency of collecting incident light. Furthermore, the counter substrate 2
A dichroic filter that creates RGB colors may be formed by stacking interference layers having different refractive indexes on the surface of 0 to utilize light interference. With this counter substrate with a dichroic filter, a brighter color electro-optical device can be realized.

(Embodiment of Electronic Equipment) Next, regarding the embodiment of the projection type color display device which is an example of the electronic equipment using the electro-optical device described in detail above as a light valve, its overall structure, particularly optical The configuration will be described. FIG. 12 is a schematic sectional view of the projection type color display device.

In FIG. 12, a liquid crystal projector 1100 which is an example of the projection type color display device according to the present embodiment.
Prepares three liquid crystal modules including the liquid crystal device 100 in which the driving circuit is mounted on the TFT array substrate.
It is configured as a projector used as the B light valves 100R, 100G, and 100B. In the liquid crystal projector 1100, when the projection light is emitted from the lamp unit 1102 of the white light source such as a metal halide lamp, the three mirrors 1106 and the two dichroic mirrors 1108 cause the light components R, G corresponding to the three primary colors of RGB, It is divided into B and is led to the light valves 100R, 100G and 100B corresponding to the respective colors. At this time, in particular, the B light is
It is guided through a relay lens system 1121 including an entrance lens 1122, a relay lens 1123, and an exit lens 1124. The light components corresponding to the three primary colors modulated by the light valves 100R, 100G, and 100B are recombined by the dichroic prism 1112, and then the screen 11 via the projection lens 1114.
20 is projected as a color image.

The present invention is not limited to the above-described embodiments, but can be appropriately modified within the scope of the gist or concept of the invention which can be read from the claims and the entire specification, and such modifications are accompanied. The manufacturing method of the electro-optical device, the electro-optical device and the electronic equipment are also included in the technical scope of the present invention.

[Brief description of drawings]

FIG. 1 is an equivalent circuit of various elements, wirings, etc. provided in a plurality of pixels in a matrix forming an image display area in an embodiment of an electro-optical device of the invention.

FIG. 2 is a data line in the electro-optical device according to the embodiment,
FIG. 6 is a plan view of a plurality of pixel groups adjacent to each other on a TFT array substrate on which scanning lines, pixel electrodes and the like are formed.

FIG. 3 is a sectional view taken along the line AA ′ of FIG.

FIG. 4 is a sectional view taken along line BB ′ of FIG.

FIG. 5 is a schematic plan view of a pixel electrode showing a voltage polarity and a region where a lateral electric field is generated in each electrode in the 1H inversion driving method used in the embodiment.

FIG. 6 is a schematic plan view of a pixel electrode showing a voltage polarity and a region where a lateral electric field is generated in each electrode in the 1S inversion driving method which can be adopted in the embodiment.

FIG. 7 illustrates a manufacturing process of the electro-optical device according to the embodiment.
FIG. 4 is a process diagram sequentially showing a portion corresponding to the BB ′ cross section of FIG. 2.

8A and 8B are process diagrams showing a manufacturing process of the electro-optical device according to another embodiment of the present invention, the process following the process (d) in FIG.

FIG. 9 is a schematic side view showing the relationship between the inclination of the step due to the convex portion and the alignment state of the liquid crystal molecules in the electro-optical device according to the embodiment.

FIG. 10 is a plan view of the TFT array substrate in the electro-optical device according to the embodiment together with the respective constituent elements formed thereon as viewed from the counter substrate side.

11 is a cross-sectional view taken along the line HH 'of FIG.

FIG. 12 is a schematic cross-sectional view showing a color liquid crystal projector which is an example of a projection type color display device which is an embodiment of an electronic apparatus of the invention.

[Explanation of symbols]

1a ... semiconductor layer 3a ... scanning line 6a ... Data line 9a ... Pixel electrode 10 ... TFT array substrate 16 ... Alignment film 20 ... Counter substrate 30 ... TFT 42 ... Second interlayer insulating film 43 ... Third interlayer insulating film 50 ... Liquid crystal layer 70 ... Storage capacity 402 ... Projection 600 ... Planarization film C1, C2 ... Horizontal electric field generation region

─────────────────────────────────────────────────── ─── Continued Front Page (51) Int.Cl. ⁷ Identification Code FI Theme Coat (Reference) G02F 1/13357 G02F 1/13357 2H093 1/1337 505 1/1337 505 5F110 1/1343 1/1343 1/1368 1/1368 H01L 21/336 H01L 29/78 612D 29/786 619A F term (reference) 2H088 EA14 EA15 FA18 HA14 MA20 2H089 HA07 HA15 KA19 QA16 TA05 TA07 UA05 2H090 HA04 HB01Y HC03 HC05 HD03 HD07 JA06 JD13 LA01 LA14 2 FA26Z FA34Y FA41Z FD11 LA30 MA07 2H092 GA17 HA02 JA24 JB51 JB58 JB68 JB69 KB25 MA17 NA04 NA11 NA25 PA01 RA05 2H093 NA16 NA32 ND60 NE02 NG02 5F110 AA30 BB01 CC02 CC08 CC08 DD02 DD03 DD05 DD13 DD144525 FF02 DD45 DD45 FF02 DD45 DD45 FF02 NN02 NN03 NN22 NN23 NN24 NN25 NN26 NN35 NN36 NN46 NN47 NN54 NN73 PP01 QQ17 QQ19

Claims (18)

[Claims] 1. A first pixel electrode group for inversion driving in a first cycle and an electro-optical material sandwiched between a pair of first and second substrates, and a first pixel electrode group complementary to the first pixel electrode group. A plurality of pixel electrodes including a second pixel electrode group to be invertedly driven in a second cycle are arranged in a plane on the first substrate and are opposed electrodes facing the plurality of pixel electrodes on the second substrate. An electro-optical device manufacturing method for manufacturing an electro-optical device provided with: a step of forming a wiring and an element for driving the pixel electrode on the first substrate; and the wiring on the first substrate. And on the upper layer side of the element,
A step of forming a convex portion in a region which becomes a gap between the pixel electrodes adjacent to each other when viewed planarly; and a step of forming the planarizing film so that the surface has a gentler step than the step on the surface of the convex portion. An etching back step of removing the flattening film by etching and retreating the surface of the convex section exposed after the removal of the flattening film, and the etchback step. And a step of forming the plurality of pixel electrodes on an upper layer side of the convex portion after the step of manufacturing the electro-optical device. 2. The etching back step is characterized in that the etching is performed so that an etching rate of a material forming the flattening film and an etching rate of a material forming the convex portion match each other. The method of manufacturing an electro-optical device according to claim 1. 3. In the etch back step, the etching rate of the material forming the planarizing film is made different from the etching rate of the material forming the protrusion, whereby the protrusion after the etching step. The method of manufacturing an electro-optical device according to claim 1, wherein the step shape of the step is controlled. 4. The flattening film is formed by applying a resist having fluidity in the step of forming the flattening film. Manufacturing method of electro-optical device. 5. The electro-optical device according to claim 4, wherein in the step of forming the flattening film, the flattening film is formed by first applying the resist and then baking the resist. Device manufacturing method. 6. The step of forming the flattening film comprises forming the flattening film as an SOG (Spin On Glass) film by spin coating. Item 7. A method for manufacturing an electro-optical device according to item. 7. The step of forming the convex portion is characterized in that the convex portion is at least partially formed by digging a groove in the first substrate. A method for manufacturing the electro-optical device described. 8. The electrical device according to claim 1, wherein in the step of forming the convex portion, the convex portion is at least partially formed due to the presence of the wiring and the element. Optical device manufacturing method. 9. The electrical process according to claim 1, wherein in the step of forming the convex portion, the convex portion is formed by forming an interlayer insulating film and then patterning the same. Optical device manufacturing method. 10. The method according to claim 1, further comprising a step of forming an alignment film on the surface of the pixel electrode, and a step of rubbing the alignment film. A method for manufacturing the electro-optical device described. 11. The method further comprises the step of forming a protective film on the convex portion after the etch back step, and in the step of forming the pixel electrode, the pixel electrode is formed on the protective film. Claims 1 to 10
The method for manufacturing an electro-optical device according to any one of 1. 12. The step of forming the convex portion intersects a first region along a first direction in a region forming a gap between the pixel electrodes and a region forming a gap between the pixel electrodes in the first direction. The method of manufacturing an electro-optical device according to claim 1, wherein the convex portion is formed only in one of the second region along the second direction. 13. The step of forming the convex portion is characterized in that the convex portion is formed by using a gap between adjacent pixel electrodes that are reverse-driven with different polarities as the one region. 13. The method for manufacturing the electro-optical device according to item 12. 14. The element for driving the pixel electrode formed on the first substrate is a bonded SOI (Silicon On In) device.
14. The method of manufacturing an electro-optical device according to claim 1, further comprising a single crystal semiconductor layer formed by a (sulator). 15. A first pixel electrode group for sandwiching an electro-optical material between a pair of first and second substrates and being driven to invert at a first period, and a complementary pixel electrode group to the first period. A plurality of pixel electrodes including a second pixel electrode group to be invertedly driven in a second cycle are arranged in a plane on the first substrate and are opposed electrodes facing the plurality of pixel electrodes on the second substrate. An electro-optical device manufacturing method for manufacturing an electro-optical device provided with: a step of forming a wiring and an element for driving the pixel electrode on the first substrate; and the wiring on the first substrate. And on the upper layer side of the element,
A step of forming a convex portion in a region serving as a gap between the pixel electrodes adjacent to each other when viewed in plan, an etchback step of receding the surface of the convex portion, and an upper layer side of the convex portion after the etchback step And a step of forming the plurality of pixel electrodes, the manufacturing method of the electro-optical device. 16. A first pixel electrode group for reversing and driving in a first period on the first substrate, wherein an electro-optic material is sandwiched between a pair of first and second substrates, and A plurality of pixel electrodes including a second pixel electrode group for inversion driving in a second cycle complementary to the first cycle and arranged in a plane, wirings and elements for driving the pixel electrodes, and the wiring And a convex portion formed in a region serving as a gap between the pixel electrodes adjacent to each other in a plan view on the upper layer side of the element, and a counter electrode facing the plurality of pixel electrodes on the second substrate, The convex portion is formed of a convex portion having a gentle surface step, which is formed by removing the planarizing film once formed on the convex portion by etching and receding the surface of the convex portion exposed after the removal. Characterized electro-optical device. 17. A first pixel electrode group for inversion driving in a first cycle on the first substrate, wherein an electro-optic material is sandwiched between a pair of first and second substrates, and A plurality of pixel electrodes including a second pixel electrode group for inversion driving in a second cycle complementary to the first cycle and arranged in a plane, wirings and elements for driving the pixel electrodes, and the wiring And a convex portion formed in a region serving as a gap between the pixel electrodes adjacent to each other in a plan view on the upper layer side of the element, and a counter electrode facing the plurality of pixel electrodes on the second substrate, The electro-optical device, wherein the convex portion is a convex portion having a gentle surface step, which is formed by receding the surface of the convex portion by etching. 18. An electronic apparatus comprising the electro-optical device according to claim 16 or 17.