JP2003283057A5 - - Google Patents
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- JP2003283057A5 JP2003283057A5 JP2003098976A JP2003098976A JP2003283057A5 JP 2003283057 A5 JP2003283057 A5 JP 2003283057A5 JP 2003098976 A JP2003098976 A JP 2003098976A JP 2003098976 A JP2003098976 A JP 2003098976A JP 2003283057 A5 JP2003283057 A5 JP 2003283057A5
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003098976A JP4628651B2 (ja) | 2003-04-02 | 2003-04-02 | 窒化物半導体発光素子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003098976A JP4628651B2 (ja) | 2003-04-02 | 2003-04-02 | 窒化物半導体発光素子の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15764699A Division JP3446660B2 (ja) | 1999-03-04 | 1999-06-04 | 窒化物半導体発光素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003283057A JP2003283057A (ja) | 2003-10-03 |
| JP2003283057A5 true JP2003283057A5 (is) | 2006-07-13 |
| JP4628651B2 JP4628651B2 (ja) | 2011-02-09 |
Family
ID=29244534
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003098976A Expired - Lifetime JP4628651B2 (ja) | 2003-04-02 | 2003-04-02 | 窒化物半導体発光素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4628651B2 (is) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005303278A (ja) * | 2004-03-16 | 2005-10-27 | Showa Denko Kk | 窒化ガリウム系化合物半導体発光素子 |
| JP2005310929A (ja) * | 2004-04-20 | 2005-11-04 | Nichia Chem Ind Ltd | 窒化物半導体層のエッチング方法 |
| US8304805B2 (en) * | 2009-01-09 | 2012-11-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor diodes fabricated by aspect ratio trapping with coalesced films |
| CN102668138B (zh) | 2009-12-21 | 2015-06-10 | 株式会社东芝 | 氮化物半导体发光元件及其制造方法 |
| JP5337862B2 (ja) * | 2011-12-19 | 2013-11-06 | 株式会社東芝 | 半導体発光素子 |
| JP5607106B2 (ja) * | 2012-05-15 | 2014-10-15 | 株式会社東芝 | 窒化物半導体発光素子およびその製造方法 |
| JP5811413B2 (ja) * | 2013-03-21 | 2015-11-11 | ウシオ電機株式会社 | Ｌｅｄ素子 |
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2003
- 2003-04-02 JP JP2003098976A patent/JP4628651B2/ja not_active Expired - Lifetime