JP2003282766A - Container for housing electronic component - Google Patents

Container for housing electronic component

Info

Publication number
JP2003282766A
JP2003282766A JP2002089436A JP2002089436A JP2003282766A JP 2003282766 A JP2003282766 A JP 2003282766A JP 2002089436 A JP2002089436 A JP 2002089436A JP 2002089436 A JP2002089436 A JP 2002089436A JP 2003282766 A JP2003282766 A JP 2003282766A
Authority
JP
Japan
Prior art keywords
region
filler
container
solder
silver
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002089436A
Other languages
Japanese (ja)
Other versions
JP3752462B2 (en
Inventor
Yoshiaki Ito
吉明 伊藤
Sadakatsu Yoshida
定功 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP2002089436A priority Critical patent/JP3752462B2/en
Publication of JP2003282766A publication Critical patent/JP2003282766A/en
Application granted granted Critical
Publication of JP3752462B2 publication Critical patent/JP3752462B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

Landscapes

  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a container for housing an electronic component that can secure airtightness in an electronic device by preventing a sealant from melting even when a heat history of 230-240°C is applied at the time of mounting the electronic device. <P>SOLUTION: This container is composed of an insulating substrate 2 having a mounting section A on which an electronic component 5 is mounted, and a frame-like metallized metal layer 2a surrounding the mounting section A and a metal cap 3 which is bonded to the metal layer 2a through the sealant 4 and airtightly houses the component 5 in a space formed between the cap 3 and substrate 2. The sealant 4 has a first area 4a disposed on the mounting section A side, and a second area 4b disposed on the outside of the area 4a. The material forming the first area 4a is prepared by adding a filler F containing silver and having a higher melting point than tin has to solder S composed mainly of tin in an amount of 25-50 mass%. The material forming the second area 4b is prepared by adding the filler F to the solder S in an amount of ≤5 mass% (including 0 mass%). <P>COPYRIGHT: (C)2004,JPO

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、半導体素子や圧電
振動子等の電子部品を気密に封止して収納するための電
子部品収納用容器に関し、特に封止材に低融点合金を用
いて封止を行う電子部品収納用容器に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic component storage container for hermetically sealing and storing electronic components such as semiconductor elements and piezoelectric vibrators, and in particular, a low melting point alloy is used as a sealing material. The present invention relates to a container for storing electronic components for sealing.

【0002】[0002]

【従来の技術】従来、半導体素子等の電子部品を収容す
るための電子部品収納用容器は、例えば酸化アルミニウ
ム質焼結体等の電気絶縁材料から成り、その上面の略中
央部に電子部品を収容するための凹部およびその周辺か
ら下面にかけて導出されたタングステンやモリブデン等
の高融点金属から成る複数個のメタライズ配線層を有
し、上面の外周部に封止材が被着された絶縁基体と、金
属材料から成り、下面の外周部に封止材が被着された蓋
体とから構成されている。そして、絶縁基体の凹部底面
に半導体素子等の電子部品を接着剤を介して取着すると
ともに電子部品の各電極をボンディングワイヤを介して
メタライズ配線層に接続し、しかる後、絶縁基体と蓋体
とをその相対向する主面に被着させておいた各々の封止
材を溶融一体化させ、絶縁基体と蓋体とから成る容器を
封止することによって最終製品としての電子装置とな
る。なお、このような従来の電子装置においては、絶縁
基体と蓋体とを接合する封止材として、鉛を主成分とす
る半田が使用されていた。
2. Description of the Related Art Conventionally, an electronic component housing container for housing electronic components such as semiconductor elements is made of an electrically insulating material such as an aluminum oxide sintered body, and the electronic components are provided in the substantially central portion of its upper surface. An insulating substrate having a concave portion for accommodating and a plurality of metallized wiring layers made of a high melting point metal such as tungsten and molybdenum led out from the periphery to the lower surface, and an encapsulating material adhered to the outer peripheral portion of the upper surface. , A lid made of a metallic material and having a sealing material applied to the outer peripheral portion of the lower surface. Then, an electronic component such as a semiconductor element is attached to the bottom surface of the concave portion of the insulating substrate via an adhesive, and each electrode of the electronic component is connected to the metallized wiring layer via a bonding wire. The respective sealing materials adhered to the main surfaces facing each other are fused and integrated, and the container including the insulating base and the lid is sealed to form an electronic device as a final product. In such a conventional electronic device, solder containing lead as a main component has been used as a sealing material for joining the insulating base and the lid.

【0003】しかしながら、封止材に含有される鉛が環
境汚染物質に指定され、例えば、鉛を含有する半田を使
用した電子装置が屋外に廃棄もしくは放置され風雨に曝
された場合、環境中に鉛が溶け出し環境を汚染する危険
性があり、近年、地球環境保護運動の高まりの中で鉛を
含有しない封止材が要求されるようになってきた。
However, when lead contained in the encapsulant is designated as an environmental pollutant and, for example, an electronic device using a solder containing lead is discarded or left outdoors and exposed to the wind and rain, it is exposed to the environment. There is a risk that lead will melt out and pollute the environment, and in recent years, a lead-free encapsulant has been required due to the increasing global environmental protection movement.

【0004】そこで、人体に対して有害である鉛を用い
ない各種封止材が開発・提案されてきた。このような封
止材としては、例えば錫やビスマス−銀、亜鉛−アルミ
ニウム等を主成分とする各種半田が採用されている。
Therefore, various encapsulating materials which do not use lead, which is harmful to the human body, have been developed and proposed. As such a sealing material, for example, various solders containing tin, bismuth-silver, zinc-aluminum or the like as a main component are adopted.

【0005】[0005]

【発明が解決しようとする課題】しかしながら錫や銀・
亜鉛を含有した合金から成る半田は、温度が−55〜125
℃の温度サイクル条件下での耐熱疲労性には優れた信頼
性を示すものの、これらを含有する半田は、その融点が
いずれも225℃以下であり、この半田を絶縁基体と蓋体
とを気密に封止する封止材として使用した場合、封止材
に電子装置を外部電気回路等に実装する際の230〜240℃
の熱履歴が加わり封止材自体が溶融してしまい、電子装
置内部の気密封止が破れてしまうという問題点を有して
いた。
[Problems to be Solved by the Invention] However, tin and silver
Solder made of an alloy containing zinc has a temperature of -55 to 125
Although they show excellent reliability in heat fatigue resistance under temperature cycle conditions of ℃, the solders containing them all have melting points of 225 ℃ or less, and the solder is hermetically sealed between the insulating base and the lid. When used as an encapsulant for encapsulation, the encapsulant should be 230 to 240 ° C when the electronic device is mounted on an external electrical circuit, etc.
Has a problem that the sealing material itself is melted due to the heat history of 1. and the airtight sealing inside the electronic device is broken.

【0006】また、ビスマス−銀を主成分とする半田
は、−55〜125℃の温度サイクル条件下での耐熱疲労特
性に劣り、気密信頼性に欠けるため電子装置の気密封止
用に用いるには不適当であるという課題を有していた。
Further, the solder containing bismuth-silver as a main component is inferior in heat fatigue resistance under a temperature cycle condition of -55 to 125 ° C. and lacks airtight reliability, so that it is used for hermetically sealing an electronic device. Had the problem of being inappropriate.

【0007】さらに、亜鉛−アルミニウムを主成分とす
る半田は、空気中に放置した場合に、腐食が進行しやす
く長期の気密信頼性に欠け、電子装置の気密封止用に用
いるには、これもまた不適当であるという課題があっ
た。
Further, the solder containing zinc-aluminum as a main component easily corrodes when left in the air, and lacks long-term airtight reliability, so that it is necessary to use it for airtight sealing of electronic devices. Was also inappropriate.

【0008】本発明はこのような従来の問題点に鑑み完
成されたもので、その目的は、電子装置を外部電気回路
等に実装する際に230〜240℃の熱履歴が加わっても電子
装置の気密性が確保でき、封止材自体の耐食性にも優
れ、さらに、鉛を含有しない地球環境に優しい電子部品
収納用容器を提供することにある。
The present invention has been completed in view of the above conventional problems, and an object thereof is to mount an electronic device on an external electric circuit or the like even if a thermal history of 230 to 240 ° C. is applied. Another object of the present invention is to provide a container for accommodating electronic components, which can secure the airtightness of the material, has excellent corrosion resistance of the sealing material itself, and is environmentally friendly and does not contain lead.

【0009】[0009]

【課題を解決するための手段】本発明の電子部品収納用
容器は、上面に電子部品が搭載される搭載部およびこの
搭載部を取り囲む枠状のメタライズ金属層を有する絶縁
基体と、枠状のメタライズ金属層に封止材を介して接合
され、絶縁基体との間の空間に電子部品を気密に収容す
る金属蓋体とから成る電子部品収納用容器であって、封
止材は搭載部側に配置される第1領域と、この第1領域
の外側に配置される第2領域とから成り、第1領域は錫
を主成分とする半田に、銀を含み半田より融点が高いフ
ィラーを25〜50質量%含有したものから成り、かつ第2
領域は錫を主成分とする半田に、銀を含み半田より融点
が高いフィラーを5質量%以下(0質量%を含む)含有
したものから成ることを特徴とするものである。
A container for storing electronic parts according to the present invention comprises a mounting part on which an electronic part is mounted, an insulating base having a frame-shaped metallized metal layer surrounding the mounting part, and a frame-shaped container. A container for electronic parts, which is joined to a metallized metal layer via a sealing material and comprises a metal lid for hermetically housing electronic parts in a space between the insulating base body and the sealing material And a second region disposed outside the first region. The first region contains a solder containing tin as a main component and a filler containing silver and having a melting point higher than that of the solder. -50% by mass, and second
The region is characterized by comprising solder containing tin as a main component and containing 5% by mass or less (including 0% by mass) of a filler containing silver and having a melting point higher than that of the solder.

【0010】また、本発明の電子部品収納用容器は、上
記構成において、フィラーが平均粒径が5〜40μmの銀
粒子、または銅粒子の表面に銀を被覆して成る平均粒径
が5〜40μmの金属粒子であることを特徴とするもので
ある。
In the container for storing electronic parts of the present invention, in the above constitution, the filler has silver particles having an average particle size of 5 to 40 μm, or the surface of copper particles is coated with silver and the average particle size is 5 to 5. It is characterized by being metal particles of 40 μm.

【0011】本発明の電子部品収納用容器によれば、封
止材の搭載部側に配置される第1領域を錫を主成分とす
る半田に、銀を含みこの半田より融点が高いフィラーを
25〜50質量%含有したものとしたことから、フィラーに
含まれる銀が半田の主成分である錫と容易に反応して封
止材の第1領域の融点が錫を主成分とする半田の融点よ
りも高いものとなり、封止材の第1領域が250℃より低
い温度で溶融することはない。その結果、電子部品収納
用容器に電子部品を収容して成る電子装置にこれを外部
電気回路等に実装する際の230〜240℃の熱履歴が加わっ
たとしても、封止材が溶融して電子装置内部の気密封止
が破れてしまうことはなく、気密信頼性の高い電子部品
収納容器とすることができる。
According to the container for storing electronic parts of the present invention, the solder containing tin as a main component in the first region arranged on the mounting portion side of the sealing material is filled with a filler containing silver and having a higher melting point than this solder.
Since the content of the filler is 25 to 50% by mass, the silver contained in the filler easily reacts with tin, which is the main component of the solder, and the melting point of the first region of the sealing material is The melting point is higher than the melting point, and the first region of the sealing material does not melt at a temperature lower than 250 ° C. As a result, the sealing material melts even if a thermal history of 230 to 240 ° C. is applied to the electronic device that houses the electronic parts in the electronic part housing container when it is mounted on an external electric circuit or the like. The airtight seal inside the electronic device is not broken, and it is possible to obtain an electronic component storage container with high airtightness and reliability.

【0012】また、封止材の第2領域を錫を主成分とす
る半田に、銀を含みこれよりも融点が高いフィラーを5
重量%以下(0重量%を含む)含有したものとしたこと
から、第2領域の融点を低いものとなすことが可能とな
り、第2領域の封止材が封止工程で良好な流動性を示す
とともに、絶縁基体のメタライズ金属層および金属蓋体
と良好な塗れ性を示し、その結果、容器の気密封止を良
好なものとすることができ、温度サイクル等の耐熱疲労
性においても気密信頼性の高い電子部品収納用容器とす
ることができる。
The second region of the encapsulant is composed of a solder containing tin as a main component and a filler containing silver and having a higher melting point than that of silver.
Since the content is less than or equal to wt% (including 0 wt%), the melting point of the second region can be made low, and the sealing material in the second region can have good fluidity in the sealing step. In addition, it shows good wettability with the metallized metal layer of the insulating substrate and the metal lid, and as a result, the container can be hermetically sealed in a good manner, and it is airtight and reliable even in thermal fatigue resistance such as temperature cycling. The container for storing electronic components having high property can be provided.

【0013】さらに、本発明の電子部品収納用容器によ
れば、上記構成において、フィラーを平均粒径が5〜40
μmの銀粒子、または銅粒子の表面に銀を被覆して成る
平均粒径が5〜40μmの金属粒子としたことから、銀が
半田の主成分である錫と容易に反応して固層線温度が25
0℃以上の共晶合金層を形成し、より気密信頼性の高い
電子部品収納用容器とすることができる。
Further, according to the container for storing electronic parts of the present invention, in the above constitution, the filler has an average particle size of 5 to 40.
Since the metal particles having an average particle size of 5 to 40 μm are formed by coating silver on the surface of μm silver particles or copper particles, the silver easily reacts with tin, which is the main component of the solder, to form a solid layer wire. Temperature is 25
By forming a eutectic alloy layer having a temperature of 0 ° C. or higher, it is possible to obtain a container for storing electronic components with higher airtightness and reliability.

【0014】[0014]

【発明の実施の形態】次に、本発明の電子部品収納用容
器を添付の図面に基づいて詳細に説明する。図1は、本
発明の電子部品収納用容器の実施の形態の一例を示す断
面図、図2はその要部拡大断面図である。これらの図に
おいて1は電子部品収納用容器、2は絶縁基体、3は金
属蓋体、4は封止材、5は電子部品であり、電子部品収
納用容器1は、主に絶縁基体2、金属蓋体3および封止
材4から構成されている。
BEST MODE FOR CARRYING OUT THE INVENTION Next, a container for storing electronic parts according to the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a cross-sectional view showing an example of an embodiment of a container for storing electronic components of the present invention, and FIG. 2 is an enlarged cross-sectional view of the main part thereof. In these figures, 1 is a container for storing electronic components, 2 is an insulating substrate, 3 is a metal lid, 4 is a sealing material, 5 is an electronic component, and the container 1 for storing electronic components is mainly an insulating substrate 2, It is composed of a metal lid 3 and a sealing material 4.

【0015】絶縁基体2は、その上面中央部に電子部品
5を搭載するための搭載部Aが設けられており、この搭
載部Aには電子部品5がガラスや樹脂・ろう材等の接着
剤を介して接着固定される。
The insulating base 2 is provided with a mounting portion A for mounting the electronic component 5 on the center of the upper surface thereof. The electronic component 5 is attached to the mounting portion A by an adhesive such as glass, resin or brazing material. It is adhesively fixed through.

【0016】また、絶縁基体2は、搭載部Aの近傍から
下面にかけて複数のメタライズ配線層6が被着形成され
ており、このメタライズ配線層6の搭載部Aの近傍に位
置する部位には電子部品5の各電極がボンディングワイ
ヤ7を介して電気的に接続され、下面に導出する部位
は、半田等の電気的接続部材を介して外部電気回路(図
示せず)に接続される。さらに、絶縁基体2の上面の外
周部には、後述する金属蓋体3との接合用の枠状のメタ
ライズ金属層2aが被着されている。
The insulating base 2 is formed with a plurality of metallized wiring layers 6 deposited from the vicinity of the mounting portion A to the lower surface thereof. The respective electrodes of the component 5 are electrically connected via the bonding wires 7, and the portion leading to the lower surface is connected to an external electric circuit (not shown) via an electric connecting member such as solder. Further, a frame-shaped metallized metal layer 2a for joining with a metal lid 3 described later is attached to the outer peripheral portion of the upper surface of the insulating substrate 2.

【0017】絶縁基体2は、縦・横の長さが2〜20m
m、高さが0.5〜2.0mm程度の直方体で、酸化アルミニ
ウムやムライト・窒化アルミニウム・炭化珪素・ガラス
セラミックス等を主成分とする焼結体等の電気絶縁材料
から成り、例えば、酸化アルミニウム質焼結体から成る
場合は、先ず、アルミナ(Al23)やシリカ(SiO
2)・カルシア(CaO)・マグネシア(MgO)等の
原料粉末に適当な有機溶剤・溶媒を添加混合して泥漿状
と成し、これを従来周知のドクターブレード法やカレン
ダーロール法等を採用してシート状に成形しセラミック
グリーンシートを得、しかる後、セラミックグリーンシ
ートを所定形状に打ち抜き加工するとともに複数枚積層
し、約1600℃の温度で焼成することにより製作される。
The insulating base 2 has a length and width of 2 to 20 m.
A rectangular parallelepiped with a height of 0.5 to 2.0 mm and aluminum oxide
Um, mullite, aluminum nitride, silicon carbide, glass
Electrically insulating materials such as sintered bodies whose main component is ceramics
, For example, an aluminum oxide sintered body
In the case of alumina (Al2O3) And silica (SiO
2), Calcia (CaO), magnesia (MgO), etc.
Appropriate organic solvent / solvent is added to the raw material powder and mixed to form a slurry
This is done by the well-known doctor blade method and curren
Ceramics formed into a sheet shape by using the Darroll method
After obtaining the green sheet, after that, the ceramic green sheet
Punched into a predetermined shape and laminated multiple sheets
It is manufactured by firing at a temperature of about 1600 ° C.

【0018】また、メタライズ配線層6および枠状のメ
タライズ金属層2aは、タングステンやモリブデン・マ
ンガン等の高融点金属から成り、これらの粉末に有機溶
剤・溶媒を添加混合した金属ペーストをそれぞれセラミ
ックグリーンシートの所定位置に従来周知のスクリーン
印刷法により所定パターンに被着あるいは充填すること
により形成して、セラミックグリーンシートと同時に焼
成することにより形成される。
The metallized wiring layer 6 and the frame-shaped metallized metal layer 2a are made of a refractory metal such as tungsten, molybdenum and manganese, and a metal paste prepared by adding and mixing an organic solvent and a solvent to these powders is used as ceramic green. It is formed by depositing or filling a predetermined pattern on a predetermined position of the sheet by a conventionally known screen printing method, and is fired at the same time as the ceramic green sheet.

【0019】なお、メタライズ配線層6および枠状のメ
タライズ金属層2aには、その表面にニッケルや金等の
耐食性に優れ、半田等のろう材との濡れ性の良好な金属
をめっき法等により、1.0〜20μmの厚さに被着させて
おくと、メタライズ配線層6および枠状のメタライズ金
属層2aの酸化腐食を有効に防止することができる。
The metallized wiring layer 6 and the frame-shaped metallized metal layer 2a are coated with a metal such as nickel or gold, which has excellent corrosion resistance and has good wettability with a brazing material such as solder, by a plating method or the like. , 1.0 to 20 μm in thickness can effectively prevent oxidative corrosion of the metallized wiring layer 6 and the frame-shaped metallized metal layer 2a.

【0020】他方、金属蓋体3は、例えば42アロイ等の
金属から成り、縦・横の長さが2〜20mm、厚みが0.1
〜0.5mm程度で、金属蓋体3と成る板材を金属蓋体3
に対応した形状を有する打ち抜き型で打ち抜くことによ
って製作される。また、その表面に電解ニッケルめっき
等によって金属層を被着させてもよい。なお、本実施例
では、金属蓋体3は、その形状が絶縁基体2に搭載され
る電子部品5を収容するように凹状となっている。
On the other hand, the metal lid 3 is made of metal such as 42 alloy and has a length and width of 2 to 20 mm and a thickness of 0.1.
Approximately 0.5 mm, the metal lid 3 is used as a plate material that becomes the metal lid 3.
It is manufactured by punching with a punching die having a shape corresponding to. A metal layer may be deposited on the surface by electrolytic nickel plating or the like. In addition, in the present embodiment, the metal lid 3 has a concave shape so as to accommodate the electronic component 5 mounted on the insulating base 2.

【0021】そしてこの金属蓋体3は、絶縁基体2の搭
載部Aに電子部品5をガラスや樹脂・ろう材等の接着剤
を介して接着固定するとともに電子部品5の各電極とメ
タライズ配線層6とをボンディングワイヤ7を介して電
気的に接続した後に、絶縁基体2に形成された枠状のメ
タライズ金属層2aに封止材4を介して接合される。
The metal lid 3 is used to bond and fix the electronic component 5 to the mounting portion A of the insulating substrate 2 via an adhesive such as glass, resin or brazing material, and each electrode of the electronic component 5 and a metallized wiring layer. 6 are electrically connected to each other via a bonding wire 7, and then bonded to a frame-shaped metallized metal layer 2a formed on the insulating substrate 2 via a sealing material 4.

【0022】本発明の電子部品収納用容器1において
は、封止材4は電子部品5の搭載部A側に配置される第
1領域4aと、この第1領域4aの外側に配置される第
2領域4bとを有しており、第1領域4aは錫を主成分
とする半田Sにこの半田Sより融点が高く、銀を含むフ
ィラーFを25〜50質量%含有したものから成り、かつ第
2領域4bは錫を主成分とする半田Sにこれよりも融点
が高く、銀を含むフィラーFを5質量%以下(0質量%
を含む)含有したものから成る。また、本発明において
はこのことが重要である。
In the container 1 for storing electronic components of the present invention, the sealing material 4 has the first region 4a arranged on the mounting portion A side of the electronic component 5 and the first region 4a arranged outside the first region 4a. The second region 4b has a second region 4b, the first region 4a is composed of a solder S containing tin as a main component and having a melting point higher than that of the solder S and containing 25 to 50 mass% of a filler F containing silver. The second region 4b has a melting point higher than that of the solder S containing tin as a main component, and the filler F containing silver is 5% by mass or less (0% by mass).
Including)). This is also important in the present invention.

【0023】本発明の電子部品収納用容器1によれば、
封止材4の搭載部A側に配置される第1領域4aを錫を
主成分とする半田Sにこの半田Sより融点が高く、銀を
含むフィラーFを25〜50質量%含有したものとしたこと
から、フィラーFに含まれる銀が半田Sの主成分である
錫と容易に反応して封止材の第1領域4aの融点が錫を
主成分とする半田Sの融点よりも高いものとなり、封止
材の第1領域4aが250℃より低い温度で溶融すること
はない。その結果、電子部品収納用容器1に電子部品5
を収容して成る電子装置にこれを外部電気回路等に実装
する際の230〜240℃の熱履歴が加わったとしても、封止
材4が溶融して電子装置内部の気密封止が破れてしまう
ことはなく、気密信頼性の高い電子部品収納容器1とす
ることができる。
According to the electronic component storage container 1 of the present invention,
The first region 4a arranged on the mounting portion A side of the encapsulant 4 contains solder S containing tin as a main component and 25 to 50 mass% of a filler F containing silver and having a higher melting point than the solder S. Therefore, the silver contained in the filler F easily reacts with tin, which is the main component of the solder S, and the melting point of the first region 4a of the sealing material is higher than the melting point of the solder S whose main component is tin. Therefore, the first region 4a of the sealing material does not melt at a temperature lower than 250 ° C. As a result, the electronic component 5 is placed in the electronic component storage container 1.
Even if a thermal history of 230 to 240 ° C. is applied to an electronic device that accommodates the above when mounting it on an external electric circuit or the like, the sealing material 4 melts and the hermetic seal inside the electronic device is broken. The electronic component storage container 1 can be made airtight and highly reliable without being damaged.

【0024】また、封止材の第2領域4bを錫を主成分
とする半田Sまたはこの半田Sにこれよりも融点が高
く、銀を含むフィラーFを5質量%以下含有したものと
したことから、第2領域4bの融点を低いものとなすこ
とが可能となり、第2領域の封止材4bが封止工程で良
好な流動性を示すとともに、絶縁基体2のメタライズ金
属層2aおよび金属蓋体3と良好な塗れ性を示し、その
結果、容器の気密封止を良好なものとすることができ、
温度サイクル等の耐熱疲労性においても気密信頼性の高
い電子部品収納用容器1とすることができる。
Further, the second region 4b of the sealing material is made of the solder S containing tin as a main component or the solder S containing 5% by mass or less of a filler F having a higher melting point and containing silver. Therefore, the melting point of the second region 4b can be made low, the sealing material 4b in the second region exhibits good fluidity in the sealing step, and the metallized metal layer 2a and the metal lid of the insulating base 2 can be formed. It shows good wettability with the body 3, and as a result, it is possible to make the container hermetically sealed,
The container 1 for housing electronic components can be highly airtight and reliable in terms of thermal fatigue resistance such as temperature cycle.

【0025】なお、第1領域4aのフィラーFの含有量
が25質量%未満であると、フィラーFに含まれる銀と半
田Sの主成分である錫との反応層の融点が低いものとな
りの第1領域4aの耐熱性が劣化する傾向があり、ま
た、50重量%を超えると、第1領域4a中の気泡が増加
し気密封止の信頼性が低下する傾向がある。従って、第
1領域4aのフィラーFの含有量は25〜50質量%が好ま
しい。また、第2領域4bのフィラーFの含有量が5質
量%を超えると、メタライズ金属層2aや金属蓋体3と
の塗れ性が低下し、温度サイクル等の耐熱疲労性が劣化
する傾向がある。従って、第2領域のフィラーFの含有
量は、5質量%以下が好ましい。
When the content of the filler F in the first region 4a is less than 25% by mass, the melting point of the reaction layer of silver contained in the filler F and tin which is the main component of the solder S becomes low. The heat resistance of the first region 4a tends to deteriorate, and if it exceeds 50% by weight, the bubbles in the first region 4a increase and the reliability of hermetic sealing tends to decrease. Therefore, the content of the filler F in the first region 4a is preferably 25 to 50% by mass. When the content of the filler F in the second region 4b exceeds 5% by mass, the wettability with the metallized metal layer 2a and the metal lid 3 decreases, and the thermal fatigue resistance such as temperature cycle tends to deteriorate. . Therefore, the content of the filler F in the second region is preferably 5% by mass or less.

【0026】錫を主成分とする半田Sとしては、例え
ば、96.5質量%の錫と3.5質量%の銀とから成る共晶
や、95.75質量%の錫と3.5質量%の銀と0.75質量%の
銅、92質量%の錫と8質量%の亜鉛、99.3質量%の錫と
0.7質量%の銅とから成る共晶、あるいは共晶に近い組
成等の鉛を含有しない各種半田が用いられる。
Examples of the solder S containing tin as a main component include a eutectic composed of 96.5% by mass of tin and 3.5% by mass of silver, or 95.75% by mass of tin, 3.5% by mass of silver and 0.75% by mass of silver. Copper, 92% by weight tin, 8% by weight zinc, 99.3% by weight tin
A eutectic composed of 0.7% by mass of copper, or a lead-free solder having a composition close to that of a eutectic is used.

【0027】このような半田Sは、電子部品5の熱的保
護や残留応力の観点からは、できる限り低温で溶融可能
なものが好ましく、例えば、96.5質量%の錫と3.5質量
%の銀とから成る共晶は、その溶融温度が約221℃であ
り、熱伝導性にも優れた銀を含有するとともに、耐熱性
に優れた合金層を良好に形成し、実装時の熱履歴に対し
ても効果的に熱を逃がすことから、好適に用いられる。
From the viewpoint of thermal protection of the electronic component 5 and residual stress, such a solder S is preferably one that can be melted at a temperature as low as possible, for example, 96.5 mass% tin and 3.5 mass% silver. The eutectic made of consists of a melting temperature of about 221 ° C, contains silver with excellent thermal conductivity, forms an alloy layer with excellent heat resistance, and is resistant to thermal history during mounting. Also, since it effectively releases heat, it is preferably used.

【0028】また、フィラーFは、錫を主成分とする半
田Sより融点が高く、銀成分を含む各種フィラーが適用
できる。このようなフィラーFとしては、銀の金属粒
子、または銀を含有した合金粒子等があげられる。とり
わけ銀粒子や、銀を被覆した銅の金属粒子は、錫を主成
分とする半田との濡れ性が良好であり、半田の流動性へ
の影響も少なく、その上、銀・銅とともに錫との固相線
温度の高い合金を形成し、熱伝導性にも優れるため最適
である。
As the filler F, various fillers having a higher melting point than the solder S containing tin as a main component and containing a silver component can be applied. Examples of such a filler F include silver metal particles or silver-containing alloy particles. In particular, silver particles and silver-coated copper metal particles have good wettability with solder containing tin as a main component and have little influence on the fluidity of the solder. It is optimal because it forms an alloy with a high solidus temperature and has excellent thermal conductivity.

【0029】また、フィラーFは、その形状が基本的に
は球状が好ましいが、必ずしも真球状である必要はな
く、楕円球状や円柱状の他、本発明におけるフィラーF
粒子として機能させることができるものであれば、種々
の異形状のものであっても良い。
The shape of the filler F is basically preferably spherical, but it is not necessarily required to be a true sphere, and the shape of the filler F in the present invention is not limited to elliptic sphere and cylinder.
Various irregular shapes may be used as long as they can function as particles.

【0030】さらに、その平均粒径が5〜40μm程度で
あるものが、気密封止する際の封止材4の流動性の観点
からは好ましく、特に、その表面から封止材4中の錫を
主成分とする半田と容易に反応して錫との共晶合金を形
成し、この共晶合金が互いに接合して耐熱性に優れた合
金層を形成して、耐熱性が向上するとともに熱伝導性に
も優れるという点でもより好ましい。
Further, those having an average particle size of about 5 to 40 μm are preferable from the viewpoint of the fluidity of the sealing material 4 at the time of hermetic sealing, and in particular, tin in the sealing material 4 from the surface thereof is preferable. Easily reacts with the solder whose main component is to form a eutectic alloy with tin, and these eutectic alloys bond to each other to form an alloy layer with excellent heat resistance, which improves heat resistance and heat resistance. It is more preferable in terms of excellent conductivity.

【0031】なお、平均粒径が5μm未満では、封止の
熱工程でフィラーFが半田Sに溶融してしまい耐熱性に
優れた上記合金層とフィラーFとの混合領域が不充分で
耐熱性が劣化する傾向があり、40μmを超えると、第1
領域4a中の気泡が増加し気密封止の信頼性が低下する
傾向がある。従って、フィラーFの平均粒径は5〜40μ
m程度であることが好ましい。
When the average particle size is less than 5 μm, the filler F is melted into the solder S in the heat step of sealing, and the mixed region of the above-mentioned alloy layer having excellent heat resistance and the filler F is insufficient and the heat resistance is high. Tends to deteriorate, and if it exceeds 40 μm, the first
Bubbles in the region 4a increase and the reliability of hermetic sealing tends to decrease. Therefore, the average particle size of the filler F is 5 to 40 μm.
It is preferably about m.

【0032】また、フィラーFとして無機材料粒子に銀
や銀合金等の金属膜を被着形成したものでも同様の効果
を奏する。とりわけ、熱伝導性の点からは無機材料粒子
として、58.6W/mKの熱伝導率を有する窒化アルミニ
ウムや熱伝導率が268W/mKを示す炭化珪素等は好適
である。さらに、金属膜を被着した無機材料粒子の平均
粒径は、第1領域4の濡れ性および流動性の観点から
は、上記金属材料と同等粒径であれば何等問題はない。
従って、その含有量も金属材料と同等の効果を有しなが
ら上記無機材料の比重から同等体積とした分だけで良
い。
Also, the same effect can be obtained by using, as the filler F, inorganic material particles to which a metal film such as silver or a silver alloy is deposited. In particular, from the viewpoint of thermal conductivity, as the inorganic material particles, aluminum nitride having a thermal conductivity of 58.6 W / mK and silicon carbide having a thermal conductivity of 268 W / mK are suitable. Further, from the viewpoint of wettability and fluidity of the first region 4, the average particle size of the inorganic material particles coated with the metal film is not problematic as long as it is the same particle size as the metal material.
Therefore, the content of the inorganic material may be equivalent to that of the metal material, while having the same effect as that of the metal material.

【0033】特に、フィラーFとして銀粒子や、銅粒子
を銀で被覆して成る金属粒子を採用する場合には、その
粒径は気密封止する際の封止材4の良好な流れ性および
封止材4中の錫を主成分とする半田Sと容易に反応して
錫との共晶合金を形成し、この共晶合金が互いに接合し
て耐熱性に優れた強固な合金層を形成し易い点からは、
5〜40μmが好ましい。
In particular, when silver particles or metal particles obtained by coating copper particles with silver are used as the filler F, the particle size is such that good flowability of the sealing material 4 at the time of hermetic sealing and It easily reacts with the solder S containing tin as a main component in the encapsulant 4 to form a eutectic alloy with tin, and these eutectic alloys are bonded to each other to form a strong alloy layer having excellent heat resistance. From the point that it is easy to do,
It is preferably 5 to 40 μm.

【0034】また、半田Sの量は、フィラーF間に濡れ
広がりその隙間を充填できる量を供給しておくことが必
要である。このため封止材4の厚みは、50μm〜150μ
m程度であることが好ましい。封止材4の厚みが50μm
未満では、第1領域4a中の気泡が増加し気密封止の信
頼性が低下する傾向があり、150μmを超えると、第2
領域4bが絶縁基体2の外周へ流れ出し、電気的な不具
合が発生する傾向がある。従って、半田Sの厚みは50〜
150μm程度であることが好ましい。
Further, it is necessary that the amount of the solder S is such that it can spread between the fillers F and fill the gaps. Therefore, the thickness of the sealing material 4 is 50 μm to 150 μm.
It is preferably about m. The thickness of the sealing material 4 is 50 μm
If it is less than 100 μm, bubbles in the first region 4a increase, and the reliability of hermetic sealing tends to decrease.
The region 4b tends to flow out to the outer periphery of the insulating base 2 and cause an electrical problem. Therefore, the thickness of the solder S is 50 to
It is preferably about 150 μm.

【0035】なお、封止材の第1領域4aおよび第2領
域4bの封止幅は、100μm以上であることが好まし
い。封止材の第1領域4aおよび第2領域4bの封止幅
が、100μm未満では、封止材の第1領域4aおよび第
2領域4bに含まれる気泡の影響により気密封止の信頼
性が低下する傾向がある。従って、封止材の第1領域4
aおよび第2領域4bの封止幅は、100μm以上である
ことが好ましい。
The sealing width of the first region 4a and the second region 4b of the sealing material is preferably 100 μm or more. If the sealing width of the first region 4a and the second region 4b of the sealing material is less than 100 μm, the reliability of the hermetic sealing will be improved due to the influence of bubbles contained in the first region 4a and the second region 4b of the sealing material. Tends to decline. Therefore, the first region 4 of the sealing material
The sealing width of a and the second region 4b is preferably 100 μm or more.

【0036】さらに、半田SとフィラーFとの濡れ性を
向上させ、フィラーFの表面に合金層を均一に形成し易
くするために、封止材4に松脂等に代表される種々のフ
ラックス成分等の添加物を、合金層の固相線温度を低下
させない範囲で添加することや、封止材4を不活性ガス
雰囲気中や還元ガス雰囲気中で加熱することも効果的で
ある。
Further, in order to improve the wettability between the solder S and the filler F and facilitate the uniform formation of an alloy layer on the surface of the filler F, various flux components represented by pine resin or the like are used as the sealing material 4. It is also effective to add such additives as in the range that does not lower the solidus temperature of the alloy layer and to heat the sealing material 4 in an inert gas atmosphere or a reducing gas atmosphere.

【0037】また、絶縁基体2と金属蓋体3との接合
は、まず、枠状の封止材の第1領域4aを金属蓋体3の
絶縁基体2との接合部にスクリーン印刷法を用いて被着
しておき、次に、枠状の封止材の第2領域4bを金属蓋
体3の絶縁基体2との接合部にスクリーン印刷法を用い
て被着する。その後、絶縁基体2の枠状のメタライズ金
属層2aと金属蓋体3との間に封止材4が挟まるように
金属蓋体3を絶縁基体2上に載置し、しかる後、金属蓋
体3を絶縁基体2側に一定圧力で押圧しながら約300〜3
50℃の温度に加熱して封止材4を溶融させることによ
り、封止材の第1領域4aのフィラーF表面に錫との合
金が形成され耐熱性を良好にするとともに、封止材の第
2領域4bが絶縁基体2の枠状のメタライズ金属層2a
と良好な塗れ性を呈して、絶縁基体2の上面に金属蓋体
3が気密に接合される。
To join the insulating base 2 and the metal lid 3, first, the first region 4a of the frame-shaped sealing material is applied to the joining portion of the metal lid 3 with the insulating base 2 by the screen printing method. Then, the second region 4b of the frame-shaped sealing material is applied to the joint portion of the metal lid 3 with the insulating substrate 2 by using the screen printing method. After that, the metal lid 3 is placed on the insulating base 2 so that the sealing material 4 is sandwiched between the frame-shaped metallized metal layer 2a of the insulating base 2 and the metal lid 3, and then the metal lid 3 is placed. Approximately 300 to 3 while pressing 3 on the insulating base 2 side with a constant pressure
By heating the sealing material 4 by heating to a temperature of 50 ° C., an alloy with tin is formed on the surface of the filler F in the first region 4a of the sealing material to improve heat resistance, and The second region 4b is a frame-shaped metallized metal layer 2a of the insulating substrate 2.
The metal lid 3 is airtightly bonded to the upper surface of the insulating substrate 2 with good wettability.

【0038】かくして本発明の電子部品収納用容器1に
よれば、絶縁基体2の搭載部Aに半導体素子等の電子部
品5をガラス・樹脂・ろう材等の接着剤を介して接着固
定するとともに電子部品5の各電極をメタライズ配線層
6にボンディングワイヤ等の接続部剤7を介して接続
し、しかる後、絶縁基体1の上面に搭載部Aを覆うよう
に金属蓋体3を封止材4を介して接合させ、絶縁基体2
と金属蓋体3とから成る容器1の内部に電子部品5を気
密に封止することによって最終製品としての電子装置と
なる。
Thus, according to the electronic component storage container 1 of the present invention, the electronic component 5 such as a semiconductor element is adhered and fixed to the mounting portion A of the insulating substrate 2 through an adhesive such as glass, resin or brazing material. Each electrode of the electronic component 5 is connected to the metallized wiring layer 6 via a connecting agent 7 such as a bonding wire, and then the metal lid 3 is sealed on the upper surface of the insulating substrate 1 so as to cover the mounting portion A. And the insulating base 2
The electronic component 5 is hermetically sealed in the container 1 composed of the metal lid 3 and the metal lid 3 to form an electronic device as a final product.

【0039】なお、本発明は上記実施例に限定されるも
のではなく、本発明の要旨を逸脱しない範囲であれば種
々の変更は可能であり、上述の実施例では電子部品とし
て半導体素子を例に挙げ、これを収容した電子装置につ
いて詳述したが、圧電振動子や弾性表面波素子等の電子
部品を収容した電子装置にも適用可能である。
The present invention is not limited to the above embodiments, and various modifications can be made without departing from the scope of the present invention. In the above embodiments, a semiconductor element is used as an electronic component. Although the electronic device housing this is described in detail above, it is also applicable to an electronic device housing electronic components such as a piezoelectric vibrator and a surface acoustic wave element.

【0040】[0040]

【実施例】効果の確認を行なうため、次の実験を行っ
た。封止材4の第1領域4a、第2領域4bのフィラー
Fの含有量、およびフィラーFの平均粒径の範囲につい
て決定した実験例を示す。また、本発明の電子部品収納
用容器の評価は、温度サイクル300サイクル後の封止容
器のヘリウムガスリークテストで行なった。なお、評価
用容器としては、絶縁基体の縦方向の寸法が12.0mm、
横方向の寸法が8.0mm、高さが1.0mmであり、蓋体と
の接合面の幅が0.7mmである容器を用いた。
EXAMPLE The following experiment was conducted to confirm the effect. An experimental example in which the content of the filler F in the first region 4a and the second region 4b of the sealing material 4 and the range of the average particle diameter of the filler F are determined will be shown. Further, the evaluation of the electronic component storage container of the present invention was conducted by a helium gas leak test of the sealed container after 300 temperature cycles. As the evaluation container, the longitudinal dimension of the insulating substrate is 12.0 mm,
A container having a lateral dimension of 8.0 mm, a height of 1.0 mm, and a width of a joint surface with the lid body of 0.7 mm was used.

【0041】(実験1)封止材4の第2領域4bのフィ
ラーF含有量、およびフィラーFの平均粒径を一定に
し、封止材4の第2領域4aのフィラーF含有量を20〜
55質量%の間で変化させ温度サイクル後の気密性を確認
した。結果を表1に示す。
(Experiment 1) The filler F content of the second region 4b of the encapsulating material 4 and the average particle diameter of the filler F are kept constant, and the filler F content of the second region 4a of the encapsulating material 4 is 20 to 20%.
The airtightness after the temperature cycle was confirmed by changing between 55% by mass. The results are shown in Table 1.

【0042】[0042]

【表1】 [Table 1]

【0043】実験結果より、封止材4の第2領域4aの
フィラーF含有量については、25〜50質量%の範囲で良
好な気密性信頼性を示すことがわかった。
From the experimental results, it was found that the content of the filler F in the second region 4a of the sealing material 4 was in the range of 25 to 50% by mass, and good airtightness reliability was exhibited.

【0044】次に、封止材4の第2領域4bのフィラー
F含有量について、次の実験を行った。 (実験2)封止材4の第2領域4aのフィラーF含有
量、およびフィラーFの平均粒径を一定にし、封止材4
の第2領域4bのフィラーF含有量を0〜7質量%の間
で変化させ温度サイクル後の気密性を確認した。結果を
表2に示す。
Next, the following experiment was conducted on the content of the filler F in the second region 4b of the sealing material 4. (Experiment 2) The content of the filler F in the second region 4a of the encapsulating material 4 and the average particle diameter of the filler F were made constant, and the encapsulating material 4
The filler F content of the second region 4b was changed between 0 and 7% by mass, and the airtightness after the temperature cycle was confirmed. The results are shown in Table 2.

【0045】[0045]

【表2】 [Table 2]

【0046】実験結果より、封止材4の第2領域4bの
フィラーF含有量については、0〜5質量%の範囲で良
好な気密性信頼性を示すことがわかった。
From the experimental results, it was found that the content of the filler F in the second region 4b of the sealing material 4 was in the range of 0 to 5% by mass, and the airtightness reliability was good.

【0047】(実験3)さらに、封止材4の第2領域4
aのフィラーF含有量、および封止材4の第2領域4b
のフィラーF含有量を一定にし、フィラーFの平均粒径
を3〜45μmの間で変化させ温度サイクル後の気密性を
確認した。結果を表3に示す。
(Experiment 3) Furthermore, the second region 4 of the sealing material 4
Filler F content of a and the second region 4b of the sealing material 4
The content of the filler F was maintained constant, the average particle size of the filler F was varied between 3 and 45 μm, and the airtightness after the temperature cycle was confirmed. The results are shown in Table 3.

【0048】[0048]

【表3】 [Table 3]

【0049】実験結果より、フィラーFの平均粒径につ
いては、5〜40μmの範囲で良好な気密性信頼性を示す
ことがわかった。
From the experimental results, it was found that the average particle size of the filler F is in the range of 5 to 40 μm and shows good reliability of airtightness.

【0050】[0050]

【発明の効果】本発明の電子部品収納用容器によれば、
封止材の搭載部側に配置される第1領域を錫を主成分と
する半田に、銀を含みこの半田より融点が高いフィラー
を25〜50質量%含有したものとしたことから、フィラー
に含まれる銀が半田の主成分である錫と容易に反応して
封止材の第1領域の融点が錫を主成分とする半田の融点
よりも高いものとなり、封止材の第1領域が250℃より
低い温度で溶融することはない。その結果、電子部品収
納用容器に電子部品を収容して成る電子装置にこれを外
部電気回路等に実装する際の230〜240℃の熱履歴が加わ
ったとしても、封止材が溶融して電子装置内部の気密封
止が破れてしまうことはなく、気密信頼性の高い電子部
品収納容器とすることができる。
According to the electronic component storage container of the present invention,
The first region arranged on the mounting portion side of the encapsulant contains 25 to 50% by mass of a filler containing tin as a main component and a filler containing silver and having a melting point higher than that of the solder. The silver contained easily reacts with tin, which is the main component of the solder, and the melting point of the first region of the encapsulant becomes higher than the melting point of the solder containing tin as the main component. It does not melt below 250 ° C. As a result, the sealing material melts even if a thermal history of 230 to 240 ° C. is applied to the electronic device that houses the electronic parts in the electronic part housing container when it is mounted on an external electric circuit or the like. The airtight seal inside the electronic device is not broken, and it is possible to obtain an electronic component storage container with high airtightness and reliability.

【0051】また、封止材の第2領域を錫を主成分とす
る半田に、銀を含みこれよりも融点が高いフィラーを5
重量%以下(0質量%を含む)含有したものとしたこと
から、第2領域の融点を低いものとなすことが可能とな
り、第2領域の封止材が封止工程で良好な流動性を示す
とともに、絶縁基体のメタライズ金属層および金属蓋体
と良好な塗れ性を示し、その結果、容器の気密封止を良
好なものとすることができ、温度サイクル等の耐熱疲労
性においても気密信頼性の高い電子部品収納用容器とす
ることができる。
In addition, the second region of the encapsulant is mixed with a solder containing tin as a main component and a filler containing silver and having a melting point higher than that of silver.
Since the content is less than or equal to wt% (including 0% by mass), it is possible to lower the melting point of the second region, and the sealing material in the second region has good fluidity in the sealing step. In addition, it shows good wettability with the metallized metal layer of the insulating substrate and the metal lid, and as a result, the container can be hermetically sealed in a good manner, and it is airtight and reliable even in thermal fatigue resistance such as temperature cycling. The container for storing electronic components having high property can be provided.

【0052】さらに、本発明の電子部品収納用容器によ
れば、上記構成において、フィラーを平均粒径が5〜40
μmの銀粒子、または銅粒子の表面に銀を被覆して成る
金属粒子としたことから、銀が半田の主成分である錫と
容易に反応して固層線温度が250℃以上の共晶合金層を
形成し、より気密信頼性の高い電子部品収納用容器とす
ることができる。
Further, according to the container for storing electronic parts of the present invention, in the above structure, the filler has an average particle size of 5 to 40.
Eutectic with a solid layer temperature of 250 ° C or higher due to the fact that silver easily reacts with tin, which is the main component of solder, because silver particles with a diameter of μm or copper particles are coated with silver. By forming an alloy layer, it is possible to obtain a container for storing electronic components with higher airtightness and reliability.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の電子部品収納用容器の実施の形態の一
例を示す断面図である。
FIG. 1 is a cross-sectional view showing an example of an embodiment of a container for storing electronic components of the present invention.

【図2】本発明の電子部品収納用容器の要部拡大断面図
である。
FIG. 2 is an enlarged sectional view of an essential part of a container for storing electronic components of the present invention.

【符号の説明】[Explanation of symbols]

1・・・・・・・電子部品収納用容器 2・・・・・・・絶縁基体 2a・・・・・・枠状のメタライズ金属層 A・・・・・・・搭載部 3・・・・・・・金属蓋体 4・・・・・・・封止材 4a・・・・・・第1領域 4b・・・・・・第2領域 F・・・・・・・フィラー S・・・・・・・半田 5・・・・・・・電子部品 6・・・・・・・メタライズ配線層 7・・・・・・・ボンディングワイヤ 1 --- Container for storing electronic components 2 ... Insulating substrate 2a --- Frame-shaped metallized metal layer A ・ ・ ・ ・ Mounting part 3 ... Metal lid 4 ... Encapsulating material 4a ... First area 4b ... ・ Second area F ... Filler S ... Solder 5 ... Electronic parts 6 ... Metallized wiring layer 7 ... Bonding wire

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 上面に電子部品が搭載される搭載部およ
び該搭載部を取り囲む枠状のメタライズ金属層を有する
絶縁基体と、前記枠状のメタライズ金属層に封止材を介
して接合され、前記絶縁基体との間の空間に電子部品を
気密に収容する金属蓋体とから成る電子部品収納用容器
であって、前記封止材は前記搭載部側に配置される第1
領域と、該第1領域の外側に配置される第2領域とから
成り、前記第1領域は錫を主成分とする半田に、銀を含
み前記半田より融点が高いフィラーを25〜50質量%
含有したものから成り、かつ前記第2領域は前記錫を主
成分とする半田に、銀を含み前記半田より融点が高いフ
ィラーを5質量%以下(0質量%を含む)含有したもの
から成ることを特徴とする電子部品収納用容器。
1. An insulating substrate having a mounting portion on which an electronic component is mounted and a frame-shaped metallized metal layer surrounding the mounting portion, and an insulating substrate bonded to the frame-shaped metallized metal layer via a sealing material. A container for storing an electronic component, comprising a metal lid that hermetically accommodates an electronic component in a space between the insulating base, and the sealing material is disposed on the mounting portion side.
And a second region arranged outside the first region, wherein the first region contains 25 to 50% by mass of a filler containing silver as a main component and containing silver and having a melting point higher than that of the solder.
And the second region is formed by adding, to the solder containing tin as a main component, 5% by mass or less (including 0% by mass) of a filler containing silver and having a melting point higher than that of the solder. A container for storing electronic components characterized by:
【請求項2】 前記フィラーは、平均粒径が5〜40μ
mの銀粒子、または銅粒子の表面に銀を被覆して成る平
均粒径が5〜40μmの金属粒子であることを特徴とす
る請求項1記載の電子部品収納用容器。
2. The filler has an average particle size of 5 to 40 μm.
2. The container for storing electronic parts according to claim 1, which is a metal particle having an average particle diameter of 5 to 40 μm, which is formed by coating the surface of silver particles of m or copper particles with silver.
JP2002089436A 2002-03-27 2002-03-27 Electronic component storage container Expired - Fee Related JP3752462B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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Application Number Priority Date Filing Date Title
JP2002089436A JP3752462B2 (en) 2002-03-27 2002-03-27 Electronic component storage container

Publications (2)

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JP2003282766A true JP2003282766A (en) 2003-10-03
JP3752462B2 JP3752462B2 (en) 2006-03-08

Family

ID=29235015

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Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP3752462B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008108413A1 (en) * 2007-03-05 2008-09-12 Kyocera Corporation Microstructure apparatus and method for production of microstructure apparatus
WO2012140936A1 (en) * 2011-04-11 2012-10-18 株式会社村田製作所 Electronic component and method for manufacturing electronic component

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008108413A1 (en) * 2007-03-05 2008-09-12 Kyocera Corporation Microstructure apparatus and method for production of microstructure apparatus
US20100059244A1 (en) * 2007-03-05 2010-03-11 Kyocera Corporation Microstructure Apparatus and Method for Manufacturing Microstructure Apparatus
JP5500983B2 (en) * 2007-03-05 2014-05-21 京セラ株式会社 MICROSTRUCTURE DEVICE AND METHOD FOR MANUFACTURING MICROSTRUCTURE DEVICE
WO2012140936A1 (en) * 2011-04-11 2012-10-18 株式会社村田製作所 Electronic component and method for manufacturing electronic component
CN103460376A (en) * 2011-04-11 2013-12-18 株式会社村田制作所 Electronic component and manufacturing method for the electronic component
JP5704231B2 (en) * 2011-04-11 2015-04-22 株式会社村田製作所 Electronic component and method for manufacturing electronic component
US9735340B2 (en) 2011-04-11 2017-08-15 Murata Manufacturing Co., Ltd. Method of manufacturing an electronic component

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