JP2003282437A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2003282437A5 JP2003282437A5 JP2002085856A JP2002085856A JP2003282437A5 JP 2003282437 A5 JP2003282437 A5 JP 2003282437A5 JP 2002085856 A JP2002085856 A JP 2002085856A JP 2002085856 A JP2002085856 A JP 2002085856A JP 2003282437 A5 JP2003282437 A5 JP 2003282437A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- protrusions
- film
- manufacturing
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 58
- 238000004519 manufacturing process Methods 0.000 claims 18
- 238000000034 method Methods 0.000 claims 16
- 238000002425 crystallisation Methods 0.000 claims 15
- 230000008025 crystallization Effects 0.000 claims 15
- 239000007790 solid phase Substances 0.000 claims 6
- 238000000151 deposition Methods 0.000 claims 4
- 230000001678 irradiating effect Effects 0.000 claims 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 2
- 239000011248 coating agent Substances 0.000 claims 2
- 238000000576 coating method Methods 0.000 claims 2
- 239000011521 glass Substances 0.000 claims 2
- 230000010355 oscillation Effects 0.000 claims 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 2
- 239000002904 solvent Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 238000001035 drying Methods 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 230000001737 promoting effect Effects 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002085856A JP4230159B2 (ja) | 2002-03-26 | 2002-03-26 | 半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002085856A JP4230159B2 (ja) | 2002-03-26 | 2002-03-26 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003282437A JP2003282437A (ja) | 2003-10-03 |
| JP2003282437A5 true JP2003282437A5 (enrdf_load_stackoverflow) | 2005-09-02 |
| JP4230159B2 JP4230159B2 (ja) | 2009-02-25 |
Family
ID=29232657
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002085856A Expired - Fee Related JP4230159B2 (ja) | 2002-03-26 | 2002-03-26 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4230159B2 (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4534585B2 (ja) * | 2004-05-11 | 2010-09-01 | 日立電線株式会社 | 薄膜半導体基板及びその製造方法 |
| JP2006332172A (ja) * | 2005-05-24 | 2006-12-07 | Mitsubishi Electric Corp | 半導体装置及び半導体装置の製造方法 |
| JP2007005395A (ja) * | 2005-06-21 | 2007-01-11 | Mitsubishi Electric Corp | 薄膜トランジスタ |
| JP2007142167A (ja) * | 2005-11-18 | 2007-06-07 | Hitachi Displays Ltd | 表示装置およびその製造方法 |
| US8047442B2 (en) * | 2007-12-03 | 2011-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
-
2002
- 2002-03-26 JP JP2002085856A patent/JP4230159B2/ja not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2000228361A5 (enrdf_load_stackoverflow) | ||
| JP2004119919A (ja) | 半導体薄膜および半導体薄膜の製造方法 | |
| US7859016B2 (en) | Thin film semiconductor device, polycrystalline semiconductor thin film production process and production apparatus | |
| EP1087429B1 (en) | Method for laser heat treatment, and semiconductor device | |
| JP2002524874A (ja) | 薄い半導体膜の二重パルスレーザー結晶化 | |
| JP2007053364A5 (enrdf_load_stackoverflow) | ||
| JP2004179653A5 (enrdf_load_stackoverflow) | ||
| TWI389316B (zh) | 薄膜電晶體、半導體裝置、顯示器、結晶化方法及製造薄膜電晶體方法 | |
| JP2003282437A5 (enrdf_load_stackoverflow) | ||
| TW201248691A (en) | Laser processing device | |
| JP2603418B2 (ja) | 多結晶半導体薄膜の製造方法 | |
| TW201142920A (en) | Crystallization method of amorphous silicon layer | |
| JP2008085317A5 (enrdf_load_stackoverflow) | ||
| JP4410926B2 (ja) | レーザアニーリング方法 | |
| JPS62160712A (ja) | 半導体装置の製造方法 | |
| JPH0273623A (ja) | レーザビーム照射装置および照射方法 | |
| JP6544090B2 (ja) | 結晶化方法、パターニング方法、および、薄膜トランジスタ作製方法 | |
| JPS5958821A (ja) | 半導体単結晶膜の製造方法 | |
| TW200952089A (en) | Lithographic method of making uniform crystalline Si films | |
| JPH0210719A (ja) | 薄膜半導体デバイス用粗結晶構造を有する多結晶層の製法 | |
| JP2005064488A5 (enrdf_load_stackoverflow) | ||
| JP2779033B2 (ja) | 多結晶Ｓｉ薄膜の成長方法 | |
| JP2005064486A5 (enrdf_load_stackoverflow) | ||
| JPH11106279A (ja) | セラミックス薄膜の製造方法 | |
| JP3783807B2 (ja) | 有機薄膜材料の製造方法 |