JP2003280556A5 - - Google Patents

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JP2003280556A5
JP2003280556A5 JP2002087212A JP2002087212A JP2003280556A5 JP 2003280556 A5 JP2003280556 A5 JP 2003280556A5 JP 2002087212 A JP2002087212 A JP 2002087212A JP 2002087212 A JP2002087212 A JP 2002087212A JP 2003280556 A5 JP2003280556 A5 JP 2003280556A5
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light
resistor
emitting element
light emitting
medium
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JP2002087212A
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JP2003280556A (en
JP4123411B2 (en
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一対の電極間に有機化合物又は無機化合物を含む電荷注入輸送媒体及び発光媒体が形成された発光素子を有し、
前記一対の電極の少なくとも一方の電極の当該電荷注入輸送媒体及び発光媒体が形成されない反対側の面に、抵抗体が設けられ、
前記抵抗体を介して、前記発光素子に電圧を印加する制御手段が備えられていることを特徴とする発光装置。A light-emitting element in which a charge injection transport medium and a light-emitting medium containing an organic compound or an inorganic compound are formed between a pair of electrodes;
A resistor is provided on the opposite surface of the pair of electrodes where the charge injection transport medium and the light emitting medium are not formed,
A light-emitting device comprising a control means for applying a voltage to the light-emitting element through the resistor. 一対の電極間に有機化合物又は無機化合物を含む電荷注入輸送媒体及び発光媒体が形成された発光素子を有し、
前記一対の電極の少なくとも一方の電極の当該電荷注入輸送媒体及び発光媒体が形成されない反対側の面に抵抗体が設けられ、
前記発光素子の一方の電極は、電圧を印加する制御手段に接続し、
他方の電極は前記抵抗体を介して一定電位を付与する共通電極に接続していることを特徴とする発光装置。A light-emitting element in which a charge injecting and transporting medium containing an organic compound or an inorganic compound and a light-emitting medium are formed between a pair of electrodes;
A resistor is provided on the opposite surface of the at least one electrode of the pair of electrodes where the charge injection transport medium and the light emitting medium are not formed,
One electrode of the light emitting element is connected to a control means for applying a voltage,
The other electrode is connected to a common electrode for applying a constant potential via the resistor. 一対の電極間に有機化合物又は無機化合物を含む電荷注入輸送媒体及び発光媒体が形成された発光素子と、電界効果型トランジスタとを有し、
前記一対の電極の少なくとも一方の電極の当該電荷注入輸送媒体及び発光媒体が形成されない反対側の面に抵抗体が設けられ、
前記電界効果型トランジスタにより、前記抵抗体を介して、前記発光素子に電圧を印加して発光を制御する画素が備えられていることを特徴とする発光装置。A light-emitting element in which a charge injecting and transporting medium containing an organic compound or an inorganic compound and a light-emitting medium are formed between a pair of electrodes, and a field-effect transistor,
A resistor is provided on the opposite surface of the at least one electrode of the pair of electrodes where the charge injection transport medium and the light emitting medium are not formed,
A light emitting device comprising: a pixel that controls light emission by applying a voltage to the light emitting element through the resistor by the field effect transistor. 一対の電極間に有機化合物又は無機化合物を含む電荷注入輸送媒体及び発光媒体が形成された発光素子と、電界効果型トランジスタとを有し、
前記一対の電極の少なくとも一方の電極の当該電荷注入輸送媒体及び発光媒体が形成されない反対側の面に抵抗体が設けられ、
前記発光素子の一方の電極は、前記電界効果型トランジスタのソース又はドレインと接続し、
他方の電極は前記抵抗体を介して一定電位を付与する共通電極に接続し、
前記電界効果型トランジスタにより、前記発光素子に電圧を印加して発光を制御する画素が備えられていることを特徴とする発光装置。A light-emitting element in which a charge injecting and transporting medium containing an organic compound or an inorganic compound and a light-emitting medium are formed between a pair of electrodes, and a field-effect transistor,
A resistor is provided on the opposite surface of the at least one electrode of the pair of electrodes where the charge injection transport medium and the light emitting medium are not formed,
One electrode of the light emitting element is connected to the source or drain of the field effect transistor,
The other electrode is connected to a common electrode that applies a constant potential via the resistor,
A light-emitting device comprising a pixel that controls light emission by applying a voltage to the light-emitting element by the field-effect transistor. 一対の電極間に有機化合物又は無機化合物を含む電荷注入輸送媒体及び発光媒体が形成された発光素子と、電界効果型トランジスタとを有し、
前記一対の電極の少なくとも一方の電極と、前記電界効果型トランジスタとの間に、抵抗体が直列に接続され、前記電界効果型トランジスタにより、前記抵抗体を介して、前記発光素子に電圧を印加して発光を制御する画素が備えられていることを特徴とする発光装置。A light-emitting element in which a charge injecting and transporting medium containing an organic compound or an inorganic compound and a light-emitting medium are formed between a pair of electrodes, and a field-effect transistor,
A resistor is connected in series between at least one electrode of the pair of electrodes and the field effect transistor, and a voltage is applied to the light emitting element via the resistor by the field effect transistor. And a pixel for controlling light emission. 一対の電極間に有機化合物又は無機化合物を含む電荷注入輸送媒体及び発光媒体が形成された発光素子を有し、
電界効果型トランジスタとを有し、
前記一対の電極の少なくとも一方の電極の当該電荷注入輸送媒体及び発光媒体が形成されない反対側の面に抵抗体が設けられ、
前記発光素子の一方の電極は、前記電界効果型トランジスタのソース又はドレインと接続し、
他方の電極は前記抵抗体を介して一定電位を付与する共通電極に直列に接続し、
前記電界効果型トランジスタにより、前記抵抗体を介して、前記発光素子に電圧を印加して発光を制御する画素が備えられていることを特徴とする発光装置。A light-emitting element in which a charge injecting and transporting medium containing an organic compound or an inorganic compound and a light-emitting medium are formed between a pair of electrodes;
A field effect transistor,
A resistor is provided on the opposite surface of the at least one electrode of the pair of electrodes where the charge injection transport medium and the light emitting medium are not formed,
One electrode of the light emitting element is connected to the source or drain of the field effect transistor,
The other electrode is connected in series to a common electrode that applies a constant potential via the resistor,
A light emitting device comprising: a pixel that controls light emission by applying a voltage to the light emitting element through the resistor by the field effect transistor. 請求項１乃至６のいずれか一項において、前記抵抗体は、Ｃ、Ｓｉ、Ｇｅから選ばれた一種又は複数種を含むことを特徴とする発光装置。  The light emitting device according to claim 1, wherein the resistor includes one or more selected from C, Si, and Ge. 請求項１乃至６のいずれか一項において、前記抵抗体は、Ｔｉ、Ｍｏ、Ｔａ、Ａｌ、Ｗ、Ｉｎ、Ｚｎの酸化物又は窒化物から選ばれた一種又は複数種を含むことを特徴とする発光装置。  The resistor according to any one of claims 1 to 6, wherein the resistor includes one or more selected from oxides or nitrides of Ti, Mo, Ta, Al, W, In, and Zn. Light-emitting device. 請求項１乃至６のいずれか一項において、前記抵抗体の抵抗値は、前記発光素子に印加する最大定格電圧印加時における内部抵抗の値に対し０．０５〜５０倍の範囲内にあることを特徴とする発光装置。  7. The resistance value of the resistor according to claim 1, wherein the resistance value is in a range of 0.05 to 50 times the value of the internal resistance when the maximum rated voltage applied to the light emitting element is applied. A light emitting device characterized by the above. 請求項１乃至６のいずれか一項において、前記抵抗体の抵抗値は、（（一画素に形成される発光素子の抵抗／一画素に形成される発光素子の面積）×０．０５）Ω以上、（（一画素に形成される発光素子の抵抗／一画素に形成される発光素子の面積）×５０）Ω以下であることを特徴とする発光装置。  7. The resistance value of the resistor according to claim 1 is ((resistance of a light emitting element formed in one pixel / area of a light emitting element formed in one pixel) × 0.05) Ω. As described above, the light-emitting device is ((resistance of light-emitting element formed in one pixel / area of light-emitting element formed in one pixel) × 50) Ω or less. 請求項１乃至６のいずれか一項において、前記抵抗体の抵抗値は、（（一画素に印加する電界／一画素に流れる電流密度）×０．０５）Ω以上、（（一画素に印加する電界／一画素に流れる電流密度）×５０）Ω以下であることを特徴とする発光装置。  7. The resistance value of the resistor according to claim 1, wherein the resistance value of the resistor is ((electric field applied to one pixel / current density flowing through one pixel) × 0.05) Ω or more ((applied to one pixel). Electric field / current density flowing through one pixel) × 50) Ω or less. 請求項１乃至１１のいずれか一項において、前記発光素子は、デジタル映像信号に基づき一定電圧が印加されて発光していることを特徴とする発光装置。  12. The light emitting device according to claim 1, wherein the light emitting element emits light by applying a constant voltage based on a digital video signal. 請求項１乃至１２のいずれか一項に記載の発光装置を有することを特徴とするテレビ、カメラ、パーソナルコンピュータ、携帯情報端末又はオーディオ装置。A television set, a camera, a personal computer, a portable information terminal, or an audio device comprising the light emitting device according to any one of claims 1 to 12.
JP2002087212A 2002-03-26 2002-03-26 Light emitting device Expired - Fee Related JP4123411B2 (en)

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JP4588312B2 (en) * 2003-12-02 2010-12-01 株式会社半導体エネルギー研究所 Method for manufacturing light emitting device
JP4566575B2 (en) * 2004-02-13 2010-10-20 株式会社半導体エネルギー研究所 Method for manufacturing light emitting device
US8729795B2 (en) 2005-06-30 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic device
WO2007088861A1 (en) * 2006-01-31 2007-08-09 Kyocera Corporation Organic el display and image display device using same
JP2007266580A (en) * 2006-02-28 2007-10-11 Kyocera Corp Organic el display and image display device using the same
JP5639514B2 (en) * 2011-03-24 2014-12-10 株式会社東芝 Display device
JPWO2013027530A1 (en) * 2011-08-25 2015-03-19 コニカミノルタ株式会社 Display lighting device
KR102103443B1 (en) * 2013-09-24 2020-04-24 삼성디스플레이 주식회사 Organic light emitting display device
US10068529B2 (en) 2016-11-07 2018-09-04 International Business Machines Corporation Active matrix OLED display with normally-on thin-film transistors

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JP2000276075A (en) * 1999-03-26 2000-10-06 Matsushita Electric Ind Co Ltd Driving circuit of light-emitting element of current control type
JP4730994B2 (en) * 1999-06-04 2011-07-20 株式会社半導体エネルギー研究所 Electro-optical device, manufacturing method thereof, and electronic device
JP2001052864A (en) * 1999-06-04 2001-02-23 Semiconductor Energy Lab Co Ltd Making method of opto-electronical device
JP4627822B2 (en) * 1999-06-23 2011-02-09 株式会社半導体エネルギー研究所 Display device
JP2001076872A (en) * 1999-06-28 2001-03-23 Semiconductor Energy Lab Co Ltd Manufacture of electro-optical device
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