JP2003270791A5 - - Google Patents
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- Publication number
- JP2003270791A5 JP2003270791A5 JP2002074565A JP2002074565A JP2003270791A5 JP 2003270791 A5 JP2003270791 A5 JP 2003270791A5 JP 2002074565 A JP2002074565 A JP 2002074565A JP 2002074565 A JP2002074565 A JP 2002074565A JP 2003270791 A5 JP2003270791 A5 JP 2003270791A5
- Authority
- JP
- Japan
- Prior art keywords
- acid
- hydroxyl groups
- resist film
- alkali
- resist composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002074565A JP4025102B2 (ja) | 2002-03-18 | 2002-03-18 | ポジ型レジスト組成物 |
| KR1020030016097A KR100933911B1 (ko) | 2002-03-18 | 2003-03-14 | 포지티브 레지스트 조성물 |
| US10/388,408 US7235341B2 (en) | 2002-03-18 | 2003-03-17 | Positive resist composition |
| EP03006122A EP1347335A1 (en) | 2002-03-18 | 2003-03-18 | Positive resist composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002074565A JP4025102B2 (ja) | 2002-03-18 | 2002-03-18 | ポジ型レジスト組成物 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003270791A JP2003270791A (ja) | 2003-09-25 |
| JP2003270791A5 true JP2003270791A5 (cg-RX-API-DMAC7.html) | 2005-04-07 |
| JP4025102B2 JP4025102B2 (ja) | 2007-12-19 |
Family
ID=27785159
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002074565A Expired - Fee Related JP4025102B2 (ja) | 2002-03-18 | 2002-03-18 | ポジ型レジスト組成物 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7235341B2 (cg-RX-API-DMAC7.html) |
| EP (1) | EP1347335A1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP4025102B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR100933911B1 (cg-RX-API-DMAC7.html) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ATE446530T1 (de) * | 2003-03-31 | 2009-11-15 | Fujifilm Corp | Positiv arbeitende resistzusammensetzung |
| US7906268B2 (en) | 2004-03-18 | 2011-03-15 | Fujifilm Corporation | Positive resist composition for immersion exposure and pattern-forming method using the same |
| JP4279237B2 (ja) * | 2004-05-28 | 2009-06-17 | 東京応化工業株式会社 | ポジ型レジスト組成物及びレジストパターン形成方法 |
| TWI368825B (en) | 2004-07-07 | 2012-07-21 | Fujifilm Corp | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same |
| JP4740666B2 (ja) * | 2004-07-07 | 2011-08-03 | 富士フイルム株式会社 | 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
| JP4524154B2 (ja) | 2004-08-18 | 2010-08-11 | 富士フイルム株式会社 | 化学増幅型レジスト組成物及びそれを用いたパターン形成方法 |
| JP4511383B2 (ja) | 2005-02-23 | 2010-07-28 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
| US7622240B2 (en) | 2005-02-28 | 2009-11-24 | International Business Machines Corporation | Low blur molecular resist |
| US7615329B2 (en) * | 2006-03-02 | 2009-11-10 | Intel Corporation | Branching self-assembling photoresist with decomposable backbone |
| US20110269071A1 (en) * | 2010-04-28 | 2011-11-03 | Fujifilm Corporation | Actinic ray-sensitive or radiation-sensitive resin composition, chemical amplification resist composition, and resist film and pattern forming method using the composition |
| US8932799B2 (en) * | 2013-03-12 | 2015-01-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist system and method |
| US10095113B2 (en) | 2013-12-06 | 2018-10-09 | Taiwan Semiconductor Manufacturing Company | Photoresist and method |
| US9581908B2 (en) | 2014-05-16 | 2017-02-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist and method |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5369095A (en) * | 1990-02-14 | 1994-11-29 | Alcon Laboratories, Inc. | Compositions and method comprising substituted glycosides as mucus membrane permeation enhancers |
| JPH07225480A (ja) | 1993-11-10 | 1995-08-22 | Hitachi Ltd | パタン形成材料及びそれを用いたパタン形成方法 |
| JP3116751B2 (ja) * | 1993-12-03 | 2000-12-11 | ジェイエスアール株式会社 | 感放射線性樹脂組成物 |
| US6309795B1 (en) * | 1996-01-26 | 2001-10-30 | Nippon Zeon Co., Ltd. | Resist composition |
| JP3692595B2 (ja) | 1996-02-16 | 2005-09-07 | Ｊｓｒ株式会社 | 感放射線性樹脂組成物 |
| US6071670A (en) * | 1996-10-11 | 2000-06-06 | Kabushiki Kaisha Toshiba | Transparent resin, photosensitive composition, and method of forming a pattern |
| KR100382960B1 (ko) * | 1998-07-03 | 2003-05-09 | 닛뽕덴끼 가부시끼가이샤 | 락톤 구조를 갖는 (메트)아크릴레이트 유도체, 중합체,포토레지스트 조성물, 및 이것을 사용한 패턴 형성 방법 |
| KR20000076585A (ko) * | 1999-02-02 | 2000-12-26 | 미우라 아끼라 | 방사선 민감성 수지 조성물 |
| JP4480835B2 (ja) | 1999-02-12 | 2010-06-16 | ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． | ポジ型感放射線性樹脂組成物 |
| US6459003B1 (en) * | 1999-04-01 | 2002-10-01 | Esperion Therapeutics, Inc. | Ether compounds |
| JP2001083709A (ja) | 1999-09-09 | 2001-03-30 | Fuji Photo Film Co Ltd | ポジ型感放射線性樹脂組成物 |
| JP3755571B2 (ja) | 1999-11-12 | 2006-03-15 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト材料及びパターン形成方法 |
| KR100555286B1 (ko) | 2000-03-22 | 2006-03-03 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 화학 증폭 포지티브형 레지스트 재료 및 패턴 형성 방법 |
| JP2002006492A (ja) * | 2000-06-09 | 2002-01-09 | Shipley Co Llc | 感放射線性樹脂組成物 |
| JP4460727B2 (ja) | 2000-06-27 | 2010-05-12 | ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． | 感放射線性樹脂組成物 |
-
2002
- 2002-03-18 JP JP2002074565A patent/JP4025102B2/ja not_active Expired - Fee Related
-
2003
- 2003-03-14 KR KR1020030016097A patent/KR100933911B1/ko not_active Expired - Fee Related
- 2003-03-17 US US10/388,408 patent/US7235341B2/en not_active Expired - Fee Related
- 2003-03-18 EP EP03006122A patent/EP1347335A1/en not_active Withdrawn