JP2003260585A - Method and apparatus for joining solids by pulse energization - Google Patents

Method and apparatus for joining solids by pulse energization

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Publication number
JP2003260585A
JP2003260585A JP2002063883A JP2002063883A JP2003260585A JP 2003260585 A JP2003260585 A JP 2003260585A JP 2002063883 A JP2002063883 A JP 2002063883A JP 2002063883 A JP2002063883 A JP 2002063883A JP 2003260585 A JP2003260585 A JP 2003260585A
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Japan
Prior art keywords
joining
solid
state
heating
heat treatment
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JP2002063883A
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Japanese (ja)
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JP4301761B2 (en
Inventor
Masao Hondo
昌雄 本藤
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Individual
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Individual
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a solid joining method which enables the formation of a joint face which is stronger and more reliable than conventional joining methods such as discharge plasma sintering. <P>SOLUTION: This solid joining method for joining members 1, 2 to be joined by pulse energization includes the steps of: butting a joining face of a first member against a joining face of a second member (butting step; step S1); forcibly heating the joining faces of the butted members externally (forced heating step; step S2); allowing a pulsed current to flow through the joining faces while pressing the heated joining faces against each other to temporarily join the joining faces to each other (pressing/pulse energization step; step S3); and heat-treating the temporarily joined members under predetermined temperature conditions (heat treatment step; step S4). It is confirmed that a strong and reliable joint state can be formed which, as compared with the conventional methods, has improved bonding strength of the joint face which is approximately equal to the strength of the base materials of the members to be joined. <P>COPYRIGHT: (C)2003,JPO

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、接合対象の部材の
接合面を所定の力で押圧しながらパルス通電を行うこと
により接合面を部材の母材強度程度の接合力で接合可能
なパルス通電による固体接合方法および接合装置に関す
るものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to pulse energization capable of joining a joining surface with a joining force about the strength of the base metal of the member by performing pulse energization while pressing the joining surface of the members to be joined with a predetermined force. The present invention relates to a solid bonding method and a solid bonding apparatus.

【0002】[0002]

【従来の技術および課題】固体同士の接合方法として
は、特開2002−059270に記載された方法があ
る。この公開公報に記載の方法では、接合対象の部材の
接合面を相互に突合せ、この状態で接合面に所定の押圧
力を加えながら当該接合面にパルス電流を流して、接合
面を仮接合状態とし、しかる後に当該接合面を熱処理す
ることにより、強固に接合された接合面を形成してい
る。
2. Description of the Related Art As a method for joining solids to each other, there is a method described in Japanese Patent Application Laid-Open No. 2002-059270. In the method described in this publication, the joining surfaces of the members to be joined are butted against each other, and in this state, a pulse current is applied to the joining surfaces while applying a predetermined pressing force to the joining surfaces, and the joining surfaces are temporarily joined. Then, the joint surface is heat treated to form a strongly joined joint surface.

【0003】この方法によれば、固体同士を強固に接合
可能であるが、接合後における接合界面には組織の不連
続性が残っているなどの改善すべき点があり、依然とし
て、より強固、且つ確実に固体同士を接合するための新
たな接合方法が要望されるところである。
According to this method, solids can be firmly bonded to each other, but there are some points to be improved such as discontinuity of the structure remaining at the bonded interface after the bonding. Moreover, a new joining method for surely joining solids is being demanded.

【0004】本発明の課題は、固体同士を、接合部材の
母材強度程度の強固な接合力で、しかも、確実に接合可
能な新たな固体接合方法および装置を提案することにあ
る。
An object of the present invention is to propose a new solid bonding method and apparatus capable of securely bonding solids to each other with a strong bonding force of the strength of the base material of the bonding member.

【0005】[0005]

【課題を解決するための手段】図1を参照して説明する
と、本発明の固体接合方法は、接合対象物である少なく
とも第1の部材および第2の部材の接合面を互いに突合
せる突合せ工程(ステップS1)と、突合せた前記部材
の接合面を外部から局部強制加熱する強制加熱工程(ス
テップS2)と、加熱状態にある接合面を相互に押圧し
ながら、当該接合面を介してパルス電流を流して、当該
接合面を仮接合する押圧・パルス通電工程(ステップS
3)と、仮接合状態の前記部材を所定の温度条件の下で
熱処理する熱処理工程(ステップS4)とを含むことを
特徴としている。
With reference to FIG. 1, a solid joining method of the present invention is a butting step of butting the joining surfaces of at least a first member and a second member, which are objects to be joined. (Step S1), a forced heating step of locally forcibly heating the joint surfaces of the abutted members (step S2), and a pulse current through the joint surfaces while pressing the joint surfaces in a heated state with each other. Flow, and a pressing / pulse energizing step (step S) for temporarily joining the joining surfaces.
3) and a heat treatment step (step S4) of heat-treating the temporarily bonded member under a predetermined temperature condition.

【0006】本発明の方法によれば、従来の方法に比べ
て接合面の接合強度が改善され、また、接合面の組織の
不連続性の残存程度が少なくなり、接合部材の母材強度
程度の接合強度を備えた強固で確実な接合状態を形成で
きることが確認された。かかる望ましい接合状態が形成
される明確な理由は定かではないが、突合せ状態の接合
面を外部から局部強制加熱すること、およびパルス通電
を行うことにより、接合界面が活性化されて、接合界面
から酸化物が除去されて接合界面の浄化が促進され、ま
た、界面接合萌芽の形成が促進され、さらに、形成され
た界面接合萌芽の拡散が促進されるという相乗効果が得
られ、この結果、強固で、且つ確実に接合された接合面
が形成されるものと考えられる。
According to the method of the present invention, the joint strength of the joint surface is improved as compared with the conventional method, the degree of discontinuity in the structure of the joint surface remains less, and the strength of the base metal of the joint member is about the same. It was confirmed that it is possible to form a strong and reliable joined state having the joining strength of. Although the clear reason why such a desirable joining state is formed is not clear, the joining interface is activated by locally forcibly heating the joining surfaces in a butt state from the outside and performing pulsed current flow, and A synergistic effect is obtained in which oxides are removed, cleaning of the bonding interface is promoted, formation of interface bonding sprouting is promoted, and diffusion of the formed interface bonding sprouting is promoted. Therefore, it is considered that a joint surface that is reliably joined is formed.

【0007】ここで、強制加熱工程(ステップS2)で
は、最も溶融点が低い接合対象の部材の溶融点の55%
〜90%の範囲内の温度となるまで、接合面を加熱する
ことが望ましい。55%未満の温度では上記の相乗効果
が充分に得られず、90%を越えると押圧状態にある接
合面の塑性化のおそれがあるので実用的でない。
Here, in the forced heating step (step S2), 55% of the melting points of the members to be joined having the lowest melting points.
It is desirable to heat the joint surface to a temperature within the range of 90%. If the temperature is less than 55%, the above synergistic effect cannot be sufficiently obtained, and if it exceeds 90%, the joint surface in the pressed state may be plasticized, which is not practical.

【0008】また、強制加熱工程における加熱時間は、
接合部材の熱容量により異なるが、一般的には、60分
以下とすればよい。
The heating time in the forced heating step is
Although it depends on the heat capacity of the joining member, it is generally 60 minutes or less.

【0009】同様に、押圧・パルス通電工程(ステップ
S3)での押圧力も、接合部材の硬度、接合面の面粗
度、接合温度などにより異なるが、一般的には、1〜7
00MPaの範囲内の押圧力とすればよい。
Similarly, the pressing force in the pressing / pulse energizing step (step S3) also varies depending on the hardness of the joining member, the surface roughness of the joining surface, the joining temperature, etc., but generally 1 to 7
The pressing force may be within the range of 00 MPa.

【0010】さらに、パルス電流としては、一般に、デ
ューティ比(パルスのオンオフの比)が50%以上、電
圧が100V以下、電流値が100A〜50,000A
の範囲内のパルス電流を用いればよい。
Further, as the pulse current, generally, a duty ratio (pulse on / off ratio) is 50% or more, a voltage is 100 V or less, and a current value is 100 A to 50,000 A.
A pulse current within the range of may be used.

【0011】熱処理工程(ステップS4)での熱処理温
度は、最も溶融点が低い接合対象の部材の溶融点の55
%〜90%の範囲内の温度とすることが望ましい。55
%未満の温度では接合面の充分な熱拡散を期待できず、
90%を越えると接合面の軟化に伴う特性変化などの弊
害が発生するおそれがあるので実用的でない。
The heat treatment temperature in the heat treatment step (step S4) is 55, which is the melting point of the members to be joined having the lowest melting point.
It is desirable to set the temperature within the range of 90% to 90%. 55
If the temperature is less than%, sufficient thermal diffusion of the joint surface cannot be expected,
If it exceeds 90%, there is a possibility that adverse effects such as characteristic changes due to softening of the joint surface may occur, which is not practical.

【0012】また、熱処理工程における熱処理時間は接
合部材の熱容量などにより異なるが一般的には60分以
下とすればよい。さらに、熱処理工程は真空中で行うこ
とが望ましい。
Further, the heat treatment time in the heat treatment step varies depending on the heat capacity of the joining member and the like, but is generally 60 minutes or less. Furthermore, it is desirable that the heat treatment process be performed in vacuum.

【0013】次に、本発明者等の試験によれば、上記の
接合界面の浄化促進、界面の接合萌芽の形成促進、およ
び界面接合萌芽の拡散促進をより高めるためには、突合
せ工程(ステップS1)に先立って、前記第1の部材の
接合面および前記第2の部材の接合面のうち、少なくと
も一方の接合面に表面処理を施す接合面処理工程(ステ
ップS0)を行うことが望ましいことが確認された。特
に、前記接合面に薄膜を形成することが望ましいことが
確認された。
Next, according to the test by the present inventors, in order to further enhance the above-mentioned purification of the joint interface, the formation of the joint sprouts at the interface, and the diffusion of the interfacial joint sprouts, the butt step (step Prior to S1), it is desirable to perform a bonding surface treatment step (step S0) of subjecting at least one of the bonding surfaces of the first member and the second member to surface treatment. Was confirmed. It has been confirmed that it is particularly desirable to form a thin film on the joint surface.

【0014】薄膜としては、その成分の少なくとも一部
が、当該薄膜が形成される接合面と同一であることが望
ましい。また、接合面と同一の薄膜を形成することがよ
り好ましい。このような薄膜は接合過程において接合部
材の母材組織内に拡散して消滅し、強固で確実に接合さ
れた接合面が形成される。
It is desirable that at least a part of the components of the thin film is the same as the bonding surface on which the thin film is formed. Further, it is more preferable to form the same thin film as the bonding surface. Such a thin film diffuses and disappears in the base material structure of the joining member in the joining process, and a strong and surely joined joint surface is formed.

【0015】例えば、図2(a)に模式的に示すよう
に、接合対象の第1の部材1と第2の部材2が同材質A
である場合には、それらの接合面1a、2aにそれぞれ
同一素材からなる薄膜3、4を形成し、これら薄膜の接
合面を接合界面5とする。この場合には、図2(b)に
模式的に示すように、これらの薄膜3、4が処理過程で
各部材1、2内に拡散して消滅して、強固、且つ確実に
接合された接合面5aが形成される。
For example, as schematically shown in FIG. 2A, the first member 1 and the second member 2 to be joined are made of the same material A.
In such a case, thin films 3 and 4 made of the same material are formed on the bonding surfaces 1a and 2a, respectively, and the bonding surfaces of these thin films are used as the bonding interface 5. In this case, as schematically shown in FIG. 2B, these thin films 3 and 4 diffused and disappeared in the respective members 1 and 2 during the treatment process, and were firmly and reliably joined. The joint surface 5a is formed.

【0016】また、図3(a)に示す模式的に示すよう
に、接合対象の第1の部材1と第2の部材2が異材質
A、Bの場合には、それらの接合面1a、2aにはそれ
ぞれの部材と同一素材からなる薄膜6、7を形成し、こ
れら薄膜の接合面を接合界面8とする。この場合におい
ても、図3(b)に模式的に示すように、これらの薄膜
6、7が処理過程でそれぞれの部材1、2内に拡散して
消滅して、強固、且つ確実に接合された接合面8aが形
成される。
Further, as schematically shown in FIG. 3 (a), when the first member 1 and the second member 2 to be joined are made of different materials A and B, their joining surfaces 1a, Thin films 6 and 7 made of the same material as the respective members are formed on 2a, and a bonding surface of these thin films serves as a bonding interface 8. Also in this case, as schematically shown in FIG. 3 (b), these thin films 6 and 7 diffuse and disappear into the respective members 1 and 2 in the process, and are firmly and surely joined. The joined surface 8a is formed.

【0017】次に、薄膜は前記接合面に浸透拡散可能な
成分を含むものであってもよい。さらに、薄膜は、還元
性のある成分を含むものであってもよい。
Next, the thin film may contain a component capable of permeating and diffusing into the joint surface. Furthermore, the thin film may contain a reducing component.

【0018】ここで、薄膜の厚さは、一般的には0.0
1〜10μmの範囲内とすればよい。0.01μm未満
では薄膜形成による効果を期待できず、また、10μm
を越える厚さの場合には薄膜が接合面に残存するおそれ
がある。
Here, the thickness of the thin film is generally 0.0
It may be in the range of 1 to 10 μm. If it is less than 0.01 μm, the effect of thin film formation cannot be expected, and it is 10 μm.
If the thickness exceeds, the thin film may remain on the joint surface.

【0019】また、薄膜の形成方法はいずれの方法であ
ってもよいが、膜厚制御が容易であり均一な薄膜を形成
可能なスパッタ蒸着法によることが望ましい。
Although any method may be used for forming the thin film, it is preferable to use the sputter vapor deposition method which can easily control the film thickness and can form a uniform thin film.

【0020】次に、接合面処理工程として、前記接合面
の平滑度を高めるための研磨処理を行うことができる。
この場合、接合素材が鉄系の場合には、前記研磨処理に
より前記接合面の面粗度をRa=0.3以上の鏡面に仕
上げることが望ましい。銅、アルミニウムなどの鉄系に
比べて硬度の低い素材は、これよりも荒い面粗度であっ
てもよい。
Next, as a joint surface treatment step, a polishing treatment for increasing the smoothness of the joint surface can be performed.
In this case, when the joining material is an iron-based material, it is desirable that the surface roughness of the joining surface is finished to a mirror surface with Ra = 0.3 or more by the polishing treatment. A material having a hardness lower than that of an iron-based material such as copper or aluminum may have a rougher surface roughness than this.

【0021】また、接合面処理工程として、前記接合面
を洗浄する洗浄処理を行うこともできる。
Further, as the joint surface treatment step, a cleaning treatment for washing the joint surface can be performed.

【0022】次に、接合面処理工程としては、第1の部
材の接合面と第2の部材の接合面が相互に密着するよう
に、相補的な接合面形状に加工する処理を含む場合があ
る。例えば、一方の接合部材の接合面が凸曲面の場合に
は、これに密着するような凹曲面を他方の接合部材の接
合面形状として採用することが望ましい。
Next, the joint surface treatment step may include processing for processing into a complementary joint surface shape so that the joint surface of the first member and the joint surface of the second member are in close contact with each other. is there. For example, when the joining surface of one joining member is a convex curved surface, it is desirable to adopt a concave curved surface that comes into close contact with this as the joining surface shape of the other joining member.

【0023】次に、本発明は、上記のパルス通電による
固体接合方法によって固体を接合するための接合装置に
関するものである。図4を参照して説明すると、本発明
によれる接合装置10は、前記第1の部材1の接合面1
aと前記第2の部材2の接合面2aを突き合わせた状態
に保持して、これらの接合面1a、2aを所定の押圧力
で押圧可能な押圧手段11と、突合せ状態の前記接合面
1a、2aを外部から強制加熱する外部加熱手段12
と、突合せ状態の前記接合面1a、2aを介してパルス
電流を流す通電手段13と、仮接合状態の前記第1およ
び第2の部材1、2を熱処理する熱処理手段(12、1
4))とを有していることを特徴としている。
Next, the present invention relates to a bonding apparatus for bonding solids by the above-mentioned solid bonding method using pulsed current. With reference to FIG. 4, the joining device 10 according to the present invention comprises a joining surface 1 of the first member 1.
a and the joint surface 2a of the second member 2 are held in abutment with each other, and pressing means 11 capable of pressing these joint surfaces 1a and 2a with a predetermined pressing force; and the joint surface 1a in the abutted state, External heating means 12 for forcibly heating 2a from the outside
An energizing means 13 for passing a pulse current through the joint surfaces 1a, 2a in a butt state, and a heat treatment means (12, 1) for heat-treating the first and second members 1, 2 in a temporary joint state.
4)) and are featured.

【0024】外部加熱手段12の発熱体21は、電気抵
抗加熱、マイクロ波加熱、グロー放電加熱、高周波加
熱、通電加熱、インパルス加熱、赤外線加熱のいずれか
一つまたは組み合わせによる発熱体とすることができ
る。
The heating element 21 of the external heating means 12 may be any one or a combination of electric resistance heating, microwave heating, glow discharge heating, high frequency heating, energization heating, impulse heating and infrared heating. it can.

【0025】また、外部加熱手段12は、接合面に対す
る局部強制加熱と、突合せ状態の部材に対する全体加熱
を行うことが可能なものとすることが望ましい。この場
合には、局部強制加熱と全体加熱を切り換え操作できる
ようにすればよい。
Further, it is desirable that the external heating means 12 be capable of performing local forced heating on the joint surface and overall heating of the members in the butted state. In this case, the local forced heating and the whole heating may be switched.

【0026】また、外部加熱手段12は、突合せ状態の
接合面を取り囲んでいる筒状等の接合部材の形状に見合
ったカバー22と、このカバー22に内蔵されている発
熱体21とを備えた構成とすることができる。
Further, the external heating means 12 is provided with a cover 22 corresponding to the shape of a joining member such as a cylinder surrounding the joining surfaces in a butt state, and a heating element 21 built in the cover 22. It can be configured.

【0027】この場合、外部加熱手段12は、カバー2
2の配置位置および角度の少なくと一方を調整可能なカ
バーガイド機構23を備えていることが望ましい。この
ようにすれば、接合面位置に対応する位置に発熱体を位
置決めすることができる。
In this case, the external heating means 12 is the cover 2
It is desirable to include the cover guide mechanism 23 that can adjust at least one of the arrangement position and the angle of the two. With this configuration, the heating element can be positioned at the position corresponding to the bonding surface position.

【0028】次に、押圧手段11によって突合せ状態に
保持された第1および第2の部材1、2が配置される処
理室15を有し、この処理室15内において接合面に対
する強制加熱、押圧および熱処理を行えば、処理効率を
高めることができる。
Next, there is a processing chamber 15 in which the first and second members 1 and 2 held in abutting state by the pressing means 11 are arranged, and in this processing chamber 15, the joint surface is forcibly heated and pressed. By performing heat treatment and heat treatment, treatment efficiency can be improved.

【0029】ここで、この場合には、図示の例の場合の
ように、外部加熱手段12と熱処理手段を兼用すれば、
装置構成をコンパクトで廉価にできる。
In this case, if the external heating means 12 and the heat treatment means are used in the same manner as in the illustrated example,
The device configuration can be made compact and inexpensive.

【0030】この場合、単一電源を備えた前記外部加熱
手段を切り換え制御して、前記接合面に対する前記局部
強制加熱と、前記熱処理時における全体加熱とを行うよ
うにすればよい。
In this case, the external heating means provided with a single power source may be switched and controlled so that the local forced heating of the joint surface and the overall heating during the heat treatment are performed.

【0031】また、熱処理を真空中などの不活性雰囲気
中で行う場合には、処理室15内を真空引きする真空引
き装置14を配置すればよい。
When the heat treatment is performed in an inert atmosphere such as a vacuum, a vacuuming device 14 for vacuuming the inside of the processing chamber 15 may be arranged.

【0032】ここにおいて、図示の例では、押圧手段に
よる加圧方向は接合面に直角な方向であり、パルス通電
方向と同一であるが、接合面形状によって加圧方向とパ
ルス通電方向が異なる方向となる場合もある。
Here, in the illustrated example, the pressing direction by the pressing means is perpendicular to the joining surface and is the same as the pulse energizing direction, but the pressing direction and the pulse energizing direction are different depending on the joining surface shape. In some cases,

【0033】通電手段13は、一対の電極31、32と
パルス電流供給源33から構成することができる。大気
中で通電を行う場合には、電極コードを用いて接合対象
の部材の周囲を挟み、通電を行えばよい。また、電極3
1と接合部材2の間、電極32と接合部材1の間には、
通電可能な耐熱耐圧発熱部材を介在させることもでき
る。このような部材は、カーボン、モリブデンなどを用
いて形成することができる。また、このような部材の形
状は、一般には電極および接合部材との接合面が平坦な
ものとされる。しかし、接合部材の端面形状が凸状ある
いは凹状、または傾斜した面である場合などには、その
ような形状と相補的な形状をした端面を備えた部材とす
ればよい。
The energizing means 13 can be composed of a pair of electrodes 31, 32 and a pulse current supply source 33. When energizing in the atmosphere, the energization may be performed by sandwiching the periphery of the members to be joined with an electrode cord. Also, the electrode 3
1 and the joining member 2, between the electrode 32 and the joining member 1,
It is also possible to interpose a heat-resistant and pressure-resistant heat generating member that can be energized. Such a member can be formed using carbon, molybdenum, or the like. In addition, the shape of such a member is generally such that the joint surface between the electrode and the joint member is flat. However, when the end surface shape of the joining member is a convex shape, a concave shape, or an inclined surface, a member having an end surface having a shape complementary to such a shape may be used.

【0034】また、薄板状あるいは薄膜状の2枚あるい
は複数枚の部材を積層接合する場合には、1組あるいは
複数組のローラ対を押圧・通電手段における押圧部材お
よび/または通電部材として用いて、これらの間を通し
て連続して部材を搬送すればよい。パイプ状の部材を接
合する場合には、ボビン状のローラを押圧部材および/
または通電部材として用いればよい。さらに、押圧力を
各接合面位置において均一に作用させるためには、導電
性クッション(コイルばね等)を電極と接合部材の間、
あるいは押圧部材と電極との間などに配置すればよい。
When two or more thin plate-like or thin film-like members are laminated and joined, one set or a plurality of sets of roller pairs are used as the pressing member and / or the energizing member in the pressing / energizing means. The members may be continuously conveyed through these spaces. When joining pipe-shaped members, use a bobbin-shaped roller as a pressing member and / or
Alternatively, it may be used as a current-carrying member. Furthermore, in order to apply the pressing force uniformly at each joint surface position, a conductive cushion (coil spring or the like) is provided between the electrode and the joint member.
Alternatively, it may be arranged between the pressing member and the electrode.

【0035】なお、本発明は3本以上の部材を同時に接
合する場合にも勿論適用することができる。棒状の部材
の場合には、直列に複数本突き合せた状態で押圧すれ
ば、同時に複数の接合面を接合できる。また、このよう
に直列に接合した部材を複数組平行に配列して、これら
を同時に押圧・通電すれば、より多数の接合を同時に行
うことができる。
The present invention can of course be applied to the case where three or more members are simultaneously joined. In the case of a rod-shaped member, a plurality of joint surfaces can be joined at the same time by pressing a plurality of rods in series while abutting each other. Further, by arranging a plurality of such members joined in series in parallel and pressing and energizing them at the same time, a larger number of members can be joined at the same time.

【0036】また、押圧方向は1軸方向のみでなく、多
軸方向から加えることができる。例えば、直交する方向
から接合面に押圧力を加えても良い。あるいは斜め方向
から加えることも可能である。
The pressing direction can be applied not only in the uniaxial direction but also in the multiaxial direction. For example, a pressing force may be applied to the joint surface from the orthogonal direction. Alternatively, it is also possible to add from an oblique direction.

【0037】次に、本発明による接合対象の部材は、
鉄、鉄系合金、ニッケル、チタン、鋳鉄などの金属、
銅、アルミニウム、亜鉛、非鉄合金などの非鉄金属、N
i基耐熱合金、形状記憶合金、耐熱合金、防振合金、防
音合金、シールド材などの特殊合金、放電プラズマ焼結
体、ペルチェ構造焼結体、ホットプレス焼結体などの粉
末焼結体、高温になると導電性を呈するセラミックなど
の部材、半導体、単結晶材などがある。
Next, the members to be joined according to the present invention are
Metals such as iron, iron-based alloys, nickel, titanium, cast iron,
Non-ferrous metals such as copper, aluminum, zinc, non-ferrous alloys, N
Special alloys such as i-base heat-resistant alloys, shape memory alloys, heat-resistant alloys, vibration-proof alloys, sound-proof alloys, shield materials, etc., spark plasma sintered bodies, Peltier structure sintered bodies, hot pressed sintered bodies, and other powder sintered bodies, There are members such as ceramics, semiconductors, and single crystal materials that exhibit conductivity at high temperatures.

【0038】また、接合部材の形状はどのようなもので
あってもよく、例えば、バルク上(固体)、薄板状(薄
膜状)、パイプ状、波板状、粒状などがあり、同一形状
あるいは異なる形状同士を相互に接合することも可能で
ある。
The joining member may have any shape, for example, bulk (solid), thin plate (thin film), pipe, corrugated, granular, etc. It is also possible to join different shapes to each other.

【0039】一方、本発明のパルス通電による固体接合
方法は、接合対象の少なくとも2つの部材の接合面のう
ち、少なくとも一方の接合面に薄膜を形成する接合面処
理工程と、前記部材の接合面を互いに突き合せる突合せ
工程と、突き合せた前記接合面を相互に押圧しながら、
当該接合面を介してパルス電流を流して、当該接合面を
仮接合する加圧・通電工程と、仮接合状態の前記部材を
所定の温度条件の下で熱処理する熱処理工程とを含むこ
とを特徴としている。
On the other hand, the solid-state joining method using pulsed current according to the present invention comprises a joining surface treatment step of forming a thin film on at least one of the joining surfaces of at least two members to be joined, and a joining surface of the members. A butting step of butting each other, and pressing the butted joint surfaces against each other,
It is characterized by including a pressurizing / energizing step of temporarily joining the joining surface by passing a pulse current through the joining surface, and a heat treatment step of heat treating the member in the temporarily joining state under a predetermined temperature condition. I am trying.

【0040】ここで、前記薄膜は、その成分の少なくと
も一部が、当該薄膜が形成される接合面と同一であるも
のとすることができる。
Here, at least a part of the components of the thin film may be the same as the bonding surface on which the thin film is formed.

【0041】また、前記薄膜は前記接合面に浸透拡散可
能な成分を含むものとすることができる。
The thin film may contain a component capable of permeating and diffusing into the joint surface.

【0042】さらに、前記薄膜は、還元性のある成分を
含むものとすることができる。
Further, the thin film may contain a reducing component.

【0043】このような薄膜の厚さは、0.01〜10
μmの範囲内とすることが望ましい。
The thickness of such a thin film is 0.01 to 10
It is desirable to set it within the range of μm.

【0044】また、前記薄膜はスパッタ蒸着法により形
成することができる。
The thin film can be formed by a sputter deposition method.

【0045】次に、前記接合面の面粗度をRa=0.3
以上の鏡面とすることが望ましい。
Next, the surface roughness of the joint surface is Ra = 0.3.
It is desirable to use the above mirror surface.

【0046】また、前記押圧・通電工程では、1〜70
0MPaの範囲内の押圧力で前記接合面を押圧すること
が望ましい。
In the pressing / energizing step, 1 to 70
It is desirable to press the joint surface with a pressing force within the range of 0 MPa.

【0047】さらに、前記押圧・通電工程では、デュー
ティ比が50%以上、電圧が100V以下、電流値が1
00A〜50,000Aの範囲内のパルス電流を流すこ
とが望ましい。
Further, in the pressing / energizing step, the duty ratio is 50% or more, the voltage is 100 V or less, and the current value is 1
It is desirable to pass a pulse current in the range of 00A to 50,000A.

【0048】さらにまた、前記熱処理工程での熱処理温
度は、最も溶融点が低い接合対象の部材の溶融点の55
%〜90%の範囲内の温度であることが望ましい。この
場合、一般に、前記熱処理工程における熱処理時間は6
0分以下とされる。また、前記熱処理工程は真空中で行
うことが望ましい。
Furthermore, the heat treatment temperature in the heat treatment step is 55 which is the melting point of the members to be joined having the lowest melting point.
It is desirable that the temperature is within the range of 90% to 90%. In this case, generally, the heat treatment time in the heat treatment step is 6
It is set to 0 minutes or less. Further, it is desirable that the heat treatment process is performed in vacuum.

【0049】[0049]

【発明の効果】本発明のパルス通電による固体接合方法
および接合装置によれば、従来の方法に比べて接合面の
接合強度が改善され、接合部材の母材強度程度の接合強
度を備えた強固で確実な接合状態を形成できることが確
認された。
EFFECTS OF THE INVENTION According to the solid-state joining method and joining apparatus using pulsed current of the present invention, the joining strength of the joining surface is improved as compared with the conventional method, and the joining strength is as strong as the base material strength of the joining member. It was confirmed that a reliable joined state can be formed by.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明のパルス通電による固体接合方法を示す
概略フローチャートである。
FIG. 1 is a schematic flowchart showing a solid-state bonding method by pulsed current according to the present invention.

【図2】本発明のパルス通電による固体接合方法におけ
る接合面に形成した薄膜の状態遷移を模式的に示す説明
図である。
FIG. 2 is an explanatory view schematically showing a state transition of a thin film formed on a joint surface in a solid-state joining method using pulsed current according to the present invention.

【図3】本発明のパルス通電による固体接合方法におけ
る接合面に形成した薄膜の状態遷移を模式的に示す説明
図である。
FIG. 3 is an explanatory view schematically showing a state transition of a thin film formed on a joint surface in a solid-state joining method using pulsed current according to the present invention.

【図4】本発明のパルス通電による接合装置の概略構成
例を示す概略構成図である。
FIG. 4 is a schematic configuration diagram showing an example of a schematic configuration of a joining device using pulsed current according to the present invention.

【符号の説明】[Explanation of symbols]

S0 接合面処理工程 S1 突合せ工程 S2 強制加熱工程 S3 押圧・パルス通電工程 S4 熱処理工程 1、2 接合部材 1a、2a 接合面 3、4、6、7 接合面に形成した薄膜 5、5a、8、8a 接合界面 10 接合装置 11 押圧手段 12 外部加熱手段 13 通電手段 14 真空引き装置 15 処理室 21 発熱体 22 カバー 23 ガイド機構 31、32 電極 33 パルス電流供給源 S0 Bonding surface treatment process S1 match process S2 forced heating process S3 pressing / pulse energization process S4 heat treatment process 1 and 2 joining members 1a, 2a Bonding surface 3, 4, 6, 7 Thin film formed on the bonding surface 5, 5a, 8, 8a Bonding interface 10 joining device 11 Pressing means 12 External heating means 13 energizing means 14 Vacuum device 15 Processing room 21 heating element 22 cover 23 Guide mechanism 31, 32 electrodes 33 Pulse current supply source

─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───

【手続補正書】[Procedure amendment]

【提出日】平成14年3月20日(2002.3.2
0)
[Submission date] March 20, 2002 (2002.3.2)
0)

【手続補正1】[Procedure Amendment 1]

【補正対象書類名】図面[Document name to be corrected] Drawing

【補正対象項目名】全図[Correction target item name] All drawings

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【図1】 [Figure 1]

【図2】 [Fig. 2]

【図3】 [Figure 3]

【図4】 [Figure 4]

Claims (39)

【特許請求の範囲】[Claims] 【請求項1】 接合対象物である少なくとも第1の部材
および第2の部材の接合面を互いに突合せる突合せ工程
と、 突合せた前記部材の接合面を外部から局部強制加熱する
強制加熱工程と、 加熱状態にある接合面を相互に押圧しながら、当該接合
面を介してパルス電流を流して、当該接合面を仮接合す
る押圧・パルス通電工程と、 仮接合状態の前記部材を所定の温度条件の下で熱処理す
る熱処理工程とを含むパルス通電による固体接合方法。
1. A butting step of butting the joining surfaces of at least a first member and a second member, which are objects to be joined, with each other, and a forced heating step of locally forcibly heating the joining surfaces of the butted members from outside. A pressing / pulse energization step of temporarily joining the joined surfaces by pressing a pulsed current through the joined surfaces while mutually pressing the joined surfaces in a heated state, and a predetermined temperature condition for the member in the temporarily joined state. Solid-state bonding method by pulsed current application, which includes a heat treatment step of heat treatment under the following conditions.
【請求項2】 請求項1において、 前記強制加熱工程では、最も溶融点が低い接合対象の部
材の溶融点の55%〜90%の範囲内の温度となるま
で、前記接合面を加熱することを特徴とするパルス通電
による固体接合方法。
2. The method according to claim 1, wherein in the forced heating step, the joining surface is heated to a temperature within a range of 55% to 90% of a melting point of a joining target member having a lowest melting point. A solid-state joining method using pulsed current.
【請求項3】 請求項2において、 前記強制加熱工程における加熱時間は60分以下である
ことを特徴とするパルス通電による固体接合方法。
3. The solid bonding method according to claim 2, wherein the heating time in the forced heating step is 60 minutes or less.
【請求項4】 請求項1において、 前記押圧・パルス通電工程では、1〜700MPaの範
囲内の押圧力で前記接合面を押圧することを特徴とする
パルス通電による固体接合方法。
4. The solid-state joining method by pulse energization according to claim 1, wherein in the pressing / pulse energizing step, the joining surface is pressed with a pressing force within a range of 1 to 700 MPa.
【請求項5】 請求項1において、 前記押圧・パルス通電工程では、デューティ比が50%
以上、電圧が100V以下、電流値が100A〜50,
000Aの範囲内のパルス電流を流すことを特徴とする
パルス通電による固体接合方法。
5. The duty ratio is 50% in the pressing / pulse energizing step according to claim 1.
As described above, the voltage is 100 V or less, the current value is 100 A to 50,
A solid-state joining method by pulsed current application, characterized in that a pulsed current within a range of 000 A is flown.
【請求項6】 請求項1において、 前記熱処理工程での熱処理温度は、最も溶融点が低い接
合対象の部材の溶融点の55%〜90%の範囲内の温度
であることを特徴とするパルス通電による固体接合方
法。
6. The pulse according to claim 1, wherein the heat treatment temperature in the heat treatment step is a temperature within a range of 55% to 90% of a melting point of a joining target member having a lowest melting point. Solid-state joining method by energization.
【請求項7】 請求項6において、 前記熱処理工程における熱処理時間は60分以下である
ことを特徴とするパルス通電による固体接合方法。
7. The solid-state joining method according to claim 6, wherein the heat treatment time in the heat treatment step is 60 minutes or less.
【請求項8】 請求項1において、 前記熱処理工程は真空中で行うことを特徴とするパルス
通電による固体接合方法。
8. The solid-state bonding method according to claim 1, wherein the heat treatment step is performed in a vacuum.
【請求項9】 請求項1において、更に、 前記突合せ工程に先立って、前記第1の部材の接合面お
よび前記第2の部材の接合面のうち、少なくとも一方の
接合面に表面処理を施す接合面処理工程を含むことを特
徴とするパルス通電による固体接合方法。
9. The joint according to claim 1, further comprising, prior to the butting step, performing surface treatment on at least one of the joint surfaces of the first member and the joint surface of the second member. A solid-state joining method by pulsed current application, which comprises a surface treatment step.
【請求項10】 請求項9において、 前記接合面処理工程は、前記接合面の平滑度を高めるた
めの研磨処理を含むことを特徴とするパルス通電による
固体接合方法。
10. The solid-state joining method according to claim 9, wherein the joining surface treatment step includes a polishing treatment for increasing the smoothness of the joining surface.
【請求項11】 請求項10において、 前記研磨処理により前記接合面の面粗度をRa=0.3
以上の鏡面に仕上げることを特徴とするパルス通電によ
る固体接合方法。
11. The surface roughness of the joint surface according to claim 10, wherein Ra = 0.3.
A solid-state joining method using pulsed current, characterized by finishing to the above mirror surface.
【請求項12】 請求項9において、 前記接合面処理工程は、前記接合面を洗浄する洗浄処理
を含むことを特徴とするパルス通電による固体接合方
法。
12. The solid-state joining method by pulse current application according to claim 9, wherein the joining surface treatment step includes a washing treatment for washing the joining surface.
【請求項13】 請求項9において、 前記接合面処理工程は、前記接合面に薄膜を形成する処
理を含むことを特徴とするパルス通電による固体接合方
法。
13. The solid-state joining method according to claim 9, wherein the joining surface treatment step includes a treatment of forming a thin film on the joining surface.
【請求項14】 請求項13において、 前記薄膜の成分の少なくとも一部は、当該薄膜が形成さ
れる接合面と同一であることを特徴とするパルス通電に
よる固体接合方法。
14. The solid-state joining method according to claim 13, wherein at least a part of the components of the thin film is the same as the joining surface on which the thin film is formed.
【請求項15】 請求項13において、 前記薄膜は前記接合面に浸透拡散可能な成分を含むこと
を特徴とするパルス通電による固体接合方法。
15. The solid-state bonding method according to claim 13, wherein the thin film contains a component capable of permeating and diffusing into the bonding surface.
【請求項16】 請求項13において、 前記薄膜は、還元性のある成分を含むことを特徴とする
パルス通電による固体接合方法。
16. The solid-state bonding method according to claim 13, wherein the thin film contains a reducing component.
【請求項17】 請求項13ないし16のうちのいずれ
かの項において、 前記薄膜の厚さは、0.01〜10μmの範囲内である
ことを特徴とするパルス通電による固体接合方法。
17. The solid-state bonding method according to claim 13, wherein the thin film has a thickness within a range of 0.01 to 10 μm.
【請求項18】 請求項13ないし17のうちのいずれ
かの項において、 前記薄膜はスパッタ蒸着法により形成することを特徴と
するパルス通電による固体接合方法。
18. The solid-state bonding method according to claim 13, wherein the thin film is formed by a sputter deposition method.
【請求項19】 請求項9において、 前記接合面処理工程では、前記第1の部材の接合面と前
記第2の部材の接合面が相互に密着するように、相補的
な接合面形状に加工する処理を含むことを特徴とするパ
ルス通電による固体接合方法。
19. The process for processing a joint surface according to claim 9, wherein the joint surface of the first member and the joint surface of the second member are processed into complementary joint surface shapes so as to be in close contact with each other. A solid-state joining method by pulsed current application, which comprises a treatment of:
【請求項20】 請求項1に記載のパルス通電による固
体接合方法により少なくとも第1および第2の部材を接
合する接合装置であって、 前記第1の部材の接合面と前記第2の部材の接合面を突
き合わせた状態に保持して、これらの接合面を所定の押
圧力で押圧可能な押圧手段と、 突合せ状態の前記接合面を外部から局部強制加熱する外
部加熱手段と、 突合せ状態の前記接合面を介してパルス電流を流す通電
手段と、 仮接合状態の前記第1および第2の部材を熱処理する熱
処理手段とを有していることを特徴とする接合装置。
20. A joining device for joining at least a first member and a second member by the solid-state joining method using pulsed current according to claim 1, wherein the joining surface of the first member and the second member are joined together. Holding means for holding the joint surfaces in contact with each other, and pressing means for pressing these joint surfaces with a predetermined pressing force; external heating means for locally forcibly heating the joint surfaces in the butted state; A joining apparatus comprising: an energizing means for passing a pulse current through a joining surface; and a heat treatment means for heat treating the first and second members in a temporary joining state.
【請求項21】 請求項20において、 前記外部加熱手段の発熱体は、電気抵抗加熱、マイクロ
波加熱、グロー放電加熱、高周波加熱、通電加熱、イン
パルス加熱、赤外線加熱のいずれか一つまたは組み合わ
せによる発熱体であることを特徴とする接合装置。
21. The heating element of the external heating means according to claim 20, wherein any one or a combination of electric resistance heating, microwave heating, glow discharge heating, high frequency heating, electric current heating, impulse heating and infrared heating is used. A joining device, which is a heating element.
【請求項22】 請求項21において、 前記外部加熱手段は、前記接合面の局部強制加熱および
前記突合せ状態の前記部材の全体加熱を行うことが可能
であることを特徴とする固体接合装置。
22. The solid bonding apparatus according to claim 21, wherein the external heating means is capable of locally forcibly heating the bonding surface and heating the entire member in the butted state.
【請求項23】 請求項22において、 前記外部加熱手段は、突合せ状態の前記接合面を取り囲
んでいるカバーと、このカバーに内蔵されている前記発
熱体とを備えていることを特徴とする接合装置。
23. The joint according to claim 22, wherein the external heating means includes a cover surrounding the joint surface in a butt state and the heating element built in the cover. apparatus.
【請求項24】 請求項23において、 前記外部加熱手段は、前記カバーの配置位置および角度
の少なくと一方を調整可能なカバーガイド機構を備えて
いることを特徴とする接合装置。
24. The joining apparatus according to claim 23, wherein the external heating means includes a cover guide mechanism capable of adjusting at least one of the arrangement position and the angle of the cover.
【請求項25】 請求項22ないし24のうちのいずれ
かの項において、 前記押圧手段によって突合せ状態に保持された前記第1
および第2の部材が配置される処理室を有し、 この処理室内において前記局部強制加熱、押圧および熱
処理が行われることを特徴とする接合装置。
25. The first unit according to any one of claims 22 to 24, which is held in a butted state by the pressing means.
And a processing chamber in which the second member is disposed, and the local forced heating, pressing and heat treatment are performed in the processing chamber.
【請求項26】 請求項25において、 前記外部加熱手段と前記熱処理手段を兼用したことを特
徴とする接合装置。
26. The joining apparatus according to claim 25, wherein the external heating means and the heat treatment means are combined.
【請求項27】 請求項26において、 単一電源を備えた前記外部加熱手段を切り換え制御し
て、前記接合面に対する前記局部強制加熱と、前記熱処
理時における全体加熱とを行うことを特徴とする接合装
置。
27. The method according to claim 26, wherein the external heating means provided with a single power source is switched and controlled to perform the local forced heating on the joint surface and the overall heating during the heat treatment. Joining device.
【請求項28】 接合対象の少なくとも2つの部材の接
合面のうち、少なくとも一方の接合面に薄膜を形成する
接合面処理工程と、 前記部材の接合面を互いに突き合せる突合せ工程と、 突き合せた前記接合面を相互に押圧しながら、当該接合
面を介してパルス電流を流して、当該接合面を仮接合す
る加圧・パルス通電工程と、 仮接合状態の前記部材を所定の温度条件の下で熱処理す
る熱処理工程とを含むパルス通電による固体接合方法。
28. A joining surface treatment step of forming a thin film on at least one of the joining surfaces of at least two members to be joined, and a butting step of butting the joining surfaces of the members together. A pressure / pulse energization step of temporarily joining the joining surfaces by applying a pulse current through the joining surfaces while pressing the joining surfaces against each other; Solid-state bonding method by pulsed current application, including a heat treatment step of heat treatment in step.
【請求項29】 請求項28において、 前記薄膜の成分の少なくとも一部は、当該薄膜が形成さ
れる接合面と同一であることを特徴とするパルス通電に
よる固体接合方法。
29. The solid-state joining method according to claim 28, wherein at least a part of the components of the thin film is the same as the joining surface on which the thin film is formed.
【請求項30】 請求項28において、 前記薄膜は前記接合面に浸透拡散可能な成分を含むこと
を特徴とするパルス通電による固体接合方法。
30. The solid-state bonding method according to claim 28, wherein the thin film contains a component capable of permeating and diffusing into the bonding surface.
【請求項31】 請求項28において、 前記薄膜は、還元性のある成分を含むことを特徴とする
パルス通電による固体接合方法。
31. The solid-state bonding method according to claim 28, wherein the thin film contains a reducing component.
【請求項32】 請求項28ないし31のうちのいずれ
かの項において、 前記薄膜の厚さは、0.01〜10μmの範囲内である
ことを特徴とするパルス通電による固体接合方法。
32. The solid-state bonding method according to claim 28, wherein the thin film has a thickness within a range of 0.01 to 10 μm.
【請求項33】 請求項28ないし32のうちのいずれ
かの項において、 前記薄膜はスパッタ蒸着法により形成することを特徴と
するパルス通電による固体接合方法。
33. The solid-state joining method according to claim 28, wherein the thin film is formed by a sputter deposition method.
【請求項34】 請求項28ないし33のうちのいずれ
かの項において、 前記接合面の面粗度をRa=0.3以上の鏡面としたこ
とを特徴とするパルス通電による固体接合方法。
34. The solid-state joining method according to any one of claims 28 to 33, wherein the surface roughness of the joint surface is a mirror surface with Ra = 0.3 or more.
【請求項35】 請求項28において、 前記押圧・通電工程では、1〜700MPaの範囲内の
押圧力で前記接合面を押圧することを特徴とするパルス
通電による固体接合方法。
35. The solid-state joining method by pulse energization according to claim 28, wherein in the pressing / energizing step, the joint surface is pressed with a pressing force within a range of 1 to 700 MPa.
【請求項36】 請求項28において、 前記押圧・通電工程では、デューティ比が50%以上、
電圧が100V以下、電流値が100A〜50,000
Aの範囲内のパルス電流を流すことを特徴とするパルス
通電による固体接合方法。
36. The duty ratio of 50% or more in the pressing / energizing step according to claim 28,
Voltage is 100V or less, current value is 100A to 50,000
A solid-state joining method by pulsed current application, characterized in that a pulsed current within the range of A is flown.
【請求項37】 請求項28において、 前記熱処理工程での熱処理温度は、最も溶融点が低い接
合対象の部材の溶融点の55%〜90%の範囲内の温度
であることを特徴とするパルス通電による固体接合方
法。
37. The pulse according to claim 28, wherein a heat treatment temperature in the heat treatment step is a temperature within a range of 55% to 90% of a melting point of a joining target member having a lowest melting point. Solid-state joining method by energization.
【請求項38】 請求項37において、 前記熱処理工程における熱処理時間は60分以下である
ことを特徴とするパルス通電による固体接合方法。
38. The solid-state bonding method according to claim 37, wherein the heat treatment time in the heat treatment step is 60 minutes or less.
【請求項39】 請求項28において、 前記熱処理工程は真空中で行うことを特徴とするパルス
通電による固体接合方法。
39. The solid-state bonding method according to claim 28, wherein the heat treatment step is performed in vacuum.
JP2002063883A 2002-03-08 2002-03-08 Joining device by pulse energization Expired - Fee Related JP4301761B2 (en)

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JP2003334664A (en) * 2002-05-17 2003-11-25 Masao Hondo Joining method for members by pulse electrification
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