JP2003258384A5 - - Google Patents

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Publication number
JP2003258384A5
JP2003258384A5 JP2003048070A JP2003048070A JP2003258384A5 JP 2003258384 A5 JP2003258384 A5 JP 2003258384A5 JP 2003048070 A JP2003048070 A JP 2003048070A JP 2003048070 A JP2003048070 A JP 2003048070A JP 2003258384 A5 JP2003258384 A5 JP 2003258384A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2003048070A
Other versions
JP2003258384A (ja
JP4663964B2 (ja
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Publication date
Priority claimed from US10/087,422 external-priority patent/US6711195B2/en
Application filed filed Critical
Publication of JP2003258384A publication Critical patent/JP2003258384A/ja
Publication of JP2003258384A5 publication Critical patent/JP2003258384A5/ja
Application granted granted Critical
Publication of JP4663964B2 publication Critical patent/JP4663964B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003048070A 2002-02-28 2003-02-25 ＧａＡｓＳｂ量子井戸層を含む長波長フォトニクスデバイス Expired - Fee Related JP4663964B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US087422 2002-02-28
US10/087,422 US6711195B2 (en) 2002-02-28 2002-02-28 Long-wavelength photonic device with GaAsSb quantum-well layer

Publications (3)

Publication Number Publication Date
JP2003258384A JP2003258384A (ja) 2003-09-12
JP2003258384A5 true JP2003258384A5 (ja) 2006-04-20
JP4663964B2 JP4663964B2 (ja) 2011-04-06

Family

ID=27733428

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003048070A Expired - Fee Related JP4663964B2 (ja) 2002-02-28 2003-02-25 ＧａＡｓＳｂ量子井戸層を含む長波長フォトニクスデバイス

Country Status (4)

Country Link
US (1) US6711195B2 (ja)
EP (1) EP1341279B1 (ja)
JP (1) JP4663964B2 (ja)
DE (1) DE60225781T2 (ja)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100499128B1 (ko) * 2002-07-19 2005-07-04 삼성전기주식회사 전류제한층이 형성된 반도체 레이저 다이오드 및 그제조방법
US6931044B2 (en) * 2003-02-18 2005-08-16 Agilent Technologies, Inc. Method and apparatus for improving temperature performance for GaAsSb/GaAs devices
US20050184303A1 (en) * 2004-02-25 2005-08-25 Ashish Tandon Strain compensating structure to reduce oxide-induced defects in semiconductor devices
US7781777B2 (en) * 2004-03-08 2010-08-24 Showa Denko K.K. Pn junction type group III nitride semiconductor light-emitting device
US7402831B2 (en) * 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
US7745814B2 (en) * 2004-12-09 2010-06-29 3M Innovative Properties Company Polychromatic LED's and related semiconductor devices
US7719015B2 (en) * 2004-12-09 2010-05-18 3M Innovative Properties Company Type II broadband or polychromatic LED's
US20070006801A1 (en) * 2005-07-09 2007-01-11 Stringfellow Gerald B Use of surfactants to control unintentional dopant in semiconductors
JP2007165501A (ja) * 2005-12-13 2007-06-28 Seiko Epson Corp 面発光型半導体レーザ及びその製造方法
DE102006035627A1 (de) * 2006-07-31 2008-02-07 Osram Opto Semiconductors Gmbh LED-Halbleiterkörper
DE102007025092A1 (de) * 2007-05-30 2008-12-04 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip
US8124959B2 (en) * 2007-06-28 2012-02-28 Intel Corporation High hole mobility semiconductor device
DE102007030062A1 (de) * 2007-06-29 2009-01-02 Osram Opto Semiconductors Gmbh Monolithisch integrierter Laserdiodenchip mit einem Aufbau als Mehrfachstrahl-Laserdiode
US20110096332A1 (en) * 2008-04-03 2011-04-28 Renato Bugge Method and device for gas analysis using an interferometric laser
JP5649157B2 (ja) * 2009-08-01 2015-01-07 住友電気工業株式会社 半導体素子およびその製造方法
FR2953335B1 (fr) * 2009-11-27 2012-04-27 Centre Nat Rech Scient Systeme d'emission laser, heterostructure et zone active a sous-puits quantiques couples, utilisation pour une emission laser a 1,55 micrometres
KR101248383B1 (ko) 2009-12-22 2013-03-28 우리이앤엘 주식회사 반도체 발광소자
JP2012080010A (ja) * 2010-10-05 2012-04-19 Sumitomo Electric Ind Ltd エピタキシャルウエハ、半導体素子、およびこれらの製造方法
JP5991018B2 (ja) * 2012-05-16 2016-09-14 ソニー株式会社 半導体装置
JP2012156562A (ja) * 2012-05-21 2012-08-16 Nec Corp 面発光レーザ
CN103077979A (zh) * 2013-01-07 2013-05-01 中国科学院上海微系统与信息技术研究所 一种GaAs衬底上扩展波长InGaAs探测器结构
KR102276422B1 (ko) * 2014-07-18 2021-07-12 삼성전자주식회사 투과형 고흡수 광 변조기 및 그 제조방법
CN106033866B (zh) 2015-03-20 2019-12-03 云晖科技有限公司 垂直腔面发射激光器
US10511143B2 (en) 2017-08-31 2019-12-17 Globalfoundries Inc. III-V lasers with on-chip integration
US11563307B2 (en) * 2018-10-01 2023-01-24 Mellanox Technologies, Ltd. High speed high bandwidth vertical-cavity surface-emitting laser
WO2021177591A1 (ko) * 2020-03-03 2021-09-10 한국과학기술원 저전류 영역에서의 효율 증대 마이크로 발광 다이오드 소자와 그의 제조 방법 및 그를 포함하는 디스플레이
CN113345987B (zh) * 2021-04-16 2022-05-13 华灿光电(苏州）有限公司 红外发光二极管芯片及其制备方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4774554A (en) * 1986-12-16 1988-09-27 American Telephone And Telegraph Company, At&T Bell Laboratories Semiconductor devices employing Ti-doped Group III-V epitaxial layer
US6127692A (en) * 1989-08-04 2000-10-03 Canon Kabushiki Kaisha Photoelectric conversion apparatus
US5762706A (en) * 1993-11-09 1998-06-09 Fujitsu Limited Method of forming compound semiconductor device
US5737353A (en) * 1993-11-26 1998-04-07 Nec Corporation Multiquantum-well semiconductor laser
DE59502831D1 (de) * 1994-03-25 1998-08-20 Fraunhofer Ges Forschung Quantenschichtstruktur
JP2991616B2 (ja) * 1994-06-30 1999-12-20 シャープ株式会社 半導体発光素子
GB2298735A (en) * 1995-03-08 1996-09-11 Sharp Kk Semiconductor device having a miniband
JP2861858B2 (ja) * 1995-03-30 1999-02-24 日本電気株式会社 多重量子井戸レーザダイオード
DE19624514C1 (de) * 1996-06-19 1997-07-17 Siemens Ag Laserdiode-Modulator-Kombination
GB2320610A (en) * 1996-12-21 1998-06-24 Sharp Kk laser device
US5959239A (en) * 1997-06-02 1999-09-28 The United States Of America As Represented By The United States Department Of Energy Thermovoltaic semiconductor device including a plasma filter
TW412889B (en) * 1997-09-24 2000-11-21 Nippon Oxygen Co Ltd Semiconductor laser
JP3189791B2 (ja) * 1998-06-19 2001-07-16 日本電気株式会社 半導体レーザ
US7058112B2 (en) * 2001-12-27 2006-06-06 Finisar Corporation Indium free vertical cavity surface emitting laser
JP2001068790A (ja) * 1999-08-27 2001-03-16 Canon Inc 半導体レーザ構造
GB2353899A (en) * 1999-09-01 2001-03-07 Sharp Kk A quantum well semiconductor device with strained barrier layer
WO2001033677A2 (en) * 1999-11-01 2001-05-10 Arizona Board Of Regents LONG WAVELENGTH PSEUDOMORPHIC InGaNPAsSb TYPE-I AND TYPE-II ACTIVE LAYERS FOR THE GAAS MATERIAL SYSTEM
US6898224B2 (en) * 2001-08-22 2005-05-24 The Furukawa Electric Co., Ltd. Semiconductor laser device

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