JP2003258369A - 半導体レーザ素子、マルチビーム半導体レーザ、及び製造方法 - Google Patents
半導体レーザ素子、マルチビーム半導体レーザ、及び製造方法Info
- Publication number
- JP2003258369A JP2003258369A JP2002057181A JP2002057181A JP2003258369A JP 2003258369 A JP2003258369 A JP 2003258369A JP 2002057181 A JP2002057181 A JP 2002057181A JP 2002057181 A JP2002057181 A JP 2002057181A JP 2003258369 A JP2003258369 A JP 2003258369A
- Authority
- JP
- Japan
- Prior art keywords
- laminated structure
- substrate
- laser
- laminated
- resonator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 84
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000000758 substrate Substances 0.000 claims abstract description 94
- 238000005530 etching Methods 0.000 claims description 29
- 238000000605 extraction Methods 0.000 claims description 27
- 238000003776 cleavage reaction Methods 0.000 claims description 7
- 239000000470 constituent Substances 0.000 claims description 7
- 230000007017 scission Effects 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 5
- 238000000926 separation method Methods 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 23
- 238000003475 lamination Methods 0.000 abstract 14
- 238000000034 method Methods 0.000 description 25
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 19
- 239000002184 metal Substances 0.000 description 13
- 238000007796 conventional method Methods 0.000 description 9
- 238000005253 cladding Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000000638 solvent extraction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002057181A JP2003258369A (ja) | 2002-03-04 | 2002-03-04 | 半導体レーザ素子、マルチビーム半導体レーザ、及び製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002057181A JP2003258369A (ja) | 2002-03-04 | 2002-03-04 | 半導体レーザ素子、マルチビーム半導体レーザ、及び製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2003258369A true JP2003258369A (ja) | 2003-09-12 |
JP2003258369A5 JP2003258369A5 (enrdf_load_stackoverflow) | 2005-09-02 |
Family
ID=28667513
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002057181A Pending JP2003258369A (ja) | 2002-03-04 | 2002-03-04 | 半導体レーザ素子、マルチビーム半導体レーザ、及び製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2003258369A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016046393A (ja) * | 2014-08-22 | 2016-04-04 | 住友電工デバイス・イノベーション株式会社 | 半導体レーザ素子 |
JP2017092382A (ja) * | 2015-11-16 | 2017-05-25 | 住友電気工業株式会社 | 量子カスケードレーザデバイス |
-
2002
- 2002-03-04 JP JP2002057181A patent/JP2003258369A/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016046393A (ja) * | 2014-08-22 | 2016-04-04 | 住友電工デバイス・イノベーション株式会社 | 半導体レーザ素子 |
JP2017092382A (ja) * | 2015-11-16 | 2017-05-25 | 住友電気工業株式会社 | 量子カスケードレーザデバイス |
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