JP2003257253A - Anti-reflection coat layer having conductive transparent surface layer - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an anti-reflection coat layer that has a high refraction factor and a function of preventing damage by chipping, and a low reflection factor. <P>SOLUTION: The anti-reflection coat layer has a structure of four layers and the first layer, which is furthest in order from the substrate, is a transparent conductive surface layer and has a refraction factor of 1.9-2.1 when the wavelength is 520-550 nm, and the thickness of the first layer is 10-40 nm. And the second layer is an oxide layer and has a refraction factor of 1.45-1.50 when the wavelength is 520-550 nm and the thickness of the second layer is 30-60 nm, and the third layer is an oxide layer and has a refraction factor of 2.1-2.3 when the wavelength is 520-550 nm and the thickness of the third layer is 30-80 nm. And the fourth layer is an oxide layer and has a refraction factor of 1.9-2.1 when the wavelength is 520-550 and the thickness of the fourth layer is 40-80 nm. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an antireflection coating layer having a transparent conductive surface layer, which can be applied to a plastic substrate or a glass substrate, and forms a system of layers in which a transparent conductive oxide layer is provided as a surface layer. The present invention relates to a transparent conductive surface layer having an antireflection coating layer.

[0002]

2. Description of the Related Art U.S. Pat. No. 4,921,760 discloses an antireflection coating layer having a plurality of layers. According to the mentioned examples of the patent, the surface layer of the layer system is silicon dioxide and its refractive index is 1.46 when its wavelength is 550 nm.

US Pat. No. 5,105,310 discloses an antireflective coating layer having a plurality of layers. According to the mentioned examples of the patent, the surface layer of the layer system is silicon dioxide and its refractive index is 1.46 when its wavelength is 550 nm.

US Pat. No. 5,147,125 discloses an antireflective coating layer having a plurality of layers. According to the examples mentioned in the patent, the surface layer of the layer system is magnesium difluoride and its wavelength is 550
When it is nm, its refractive index is 1.38.

US Pat. No. 5,216,542 discloses a layer system having a type of multiple layers. It has an anti-reflective effect and employs silicon dioxide as the surface layer of the layer system, which has a refractive index of 1.46 when the wavelength is 550 nm.

US Pat. No. 5,362,552 discloses a layer system having a type of multiple layers. It is an antireflective coating layer, and the layer system has a surface layer of silicon dioxide and a refractive index of 1.46 when the wavelength of the surface layer is 550 nm.

US Pat. Nos. 5,728,456 and 5783
No. 049 discloses a kind of improvement method. According to those methods, an anti-reflective coating layer is stacked on a plastic material. According to one of their cited examples, the surface layer of the layer system is silicon dioxide and its refractive index is 1.46 when the wavelength of the surface layer is 550 nm.

In the above-mentioned conventional patents, the surface layer of the optical system layer is silicon dioxide or magnesium difluoride ₂ , and their refractive index is 1.46 or 1.38 when the wavelength is 550 nm. It's the smaller one.

[0009] Conventionally, a large amount of anti-reflection optical coating layers have been widely produced for coating semiconductors, optical disk read heads, liquid crystal displays, cathode ray tubes, building materials such as glass, touch panels, display filters and plastic substrates. Although it has been used for several decades in the field, there is a predetermined rule in the structure of these antireflection optical coating layers, that is, all materials having a low refractive index as the surface layer of those antireflection optical coating layers, for example, Silicon dioxide, magnesium difluoride, or the like is used as the surface thin film, and their refractive indexes are 1.46 or 1.38 when the wavelength is 550 nm. However, when these antireflection optical coating layers are applied to a display, for example, when used for a display filter of a computer display or a low reflection glass of a flat cathode ray tube, a conventional antireflection optical coating is used. Since the layer is silicon dioxide or magnesium difluoride, the conductive layer is buried under the silicon dioxide or magnesium difluoride, which poses a problem during mass production.

According to the general design principle of the conventional antireflection optical coating layer, the coating layer has a high refractive index (that is, "H") on the layer surface in contact with the substrate, but the next layer surface adjacent to the layer surface is low. It has a refractive index (or "L"). Therefore, in the case of the conventional antireflection optical coating layer, the structure is HLHL or HLHLHL. In the case of explaining with a simple example, for example, as a material of H having a high refractive index, IT
When O is adopted and silicon dioxide is adopted as a low refractive index L material, the four-layer structure is glass / ITO.
/ Silicon dioxide / ITO / silicon dioxide. IT
Since O has conductivity, when the conductive layer is grounded, the conductive layer can be an electromagnetic interference shielding layer or a static electricity elimination layer. However, since the surface layer of the conventional anti-reflection optical coating layer adopts silicon dioxide, and the characteristics of the material of silicon dioxide have good chemical inertia and good electrical insulation, this anti-reflection optical coating layer is displayed. The ITO layer is covered by the silicon dioxide layer when introduced into the vessel,
It becomes difficult to form the electrodes of the ITO layer, and this anti-reflection optical coating layer needs to destroy the silicon dioxide layer by ultrasonic welding, in which case the soldering material makes good electrical contact with the ITO layer. However, such a method poses a serious problem when the antireflection optical coating layer is mass-produced.

On the other hand, during the ultrasonic welding process, the energy of liquid tin and ultrasonic waves may cause contamination of a small light spot of the soldering material, and the silicon dioxide layer must be formed during the ultrasonic welding process. If it can be broken uniformly, it cannot be ensured, and therefore, it cannot be ensured that the ITO layer is evenly contacted.

[0012] The above problems may adversely affect the yield when producing a conventional antireflection optical coating layer. Therefore, a conductive layer having a high refractive index (for example, ITO layer) is formed on the surface of the antireflection optical coating layer. If it can be a layer, the above problems can be overcome.

[0013]

SUMMARY OF THE INVENTION The main object of the present invention is to provide a transparent conductive surface layer having an antireflection coating layer, wherein the transparent conductive surface layer having an antireflection coating layer has four oxide layers. The surface layer (first layer) of the transparent conductive surface layer is a transparent conductive surface layer, and the transparent conductive surface layer has a high refractive index of 1.9 to 2.1 and also has a function of preventing scratching. In addition, since the transparent conductive surface layer and the antireflection coating layer have a low reflectance, it can be applied to a glass or plastic substrate display industry or a touch panel, and can solve all the problems facing the conventional mass production. The yield during production can be improved.

[0014]

The present invention provides a transparent conductive surface layer having an antireflection coating layer, wherein the antireflection coating layer has a four-layer structure, and is formed on a single substrate, The structure of the four layers includes a first layer, a second layer, a third layer and a fourth layer counting from the layer farther from the substrate, the first layer being a transparent conductive surface layer and having a wavelength of When it is 520 to 550 nm, its refractive index is 1.9 to 2.1, the thickness of the first layer is 10 to 40 nm, the second layer is an oxide layer, and the wavelength is 520 to 550
the refractive index is 1.45 to 1.50 when it is nm.
And the second layer has a thickness of 30 to 60 nm, and the third layer is an oxide layer having a wavelength of 520.
To 550 nm, the refractive index is 2.1 to 2.3, and the thickness of the third layer is 30 to 80 n.
m, and the fourth layer is an oxide layer, and has a refractive index of 1. when the wavelength is 520 to 550 nm.
9 to 2.1, and the thickness of the fourth layer is 40 to 80 nm.

Preferred embodiments of the present invention and their functions will be described below in detail with reference to the accompanying drawings. Embodiments according to those descriptions will be given so that the present invention can be easily understood. It is merely an example of parts and does not narrowly limit the scope of the claims of the present invention.

[0016]

BEST MODE FOR CARRYING OUT THE INVENTION As shown in the cross-sectional view (see FIG. 1) of the embodiment of the transparent conductive surface layer and antireflection coating layer of the present invention, it is mainly made of a transparent material such as glass or a plastic material, and has a boundary. Of the substrate 6 and the substrate 6 having the surface 5 and the boundary surface 5 facing in the direction observed by the observer, and the observation direction is from the top to the bottom (as indicated by the arrow) The fourth layer 4 in contact with the boundary surface 5, the third layer 3 located on the fourth layer 4 along the observation direction of the observer, and the third layer 3 along the observation direction of the observer. And a first layer 1 located on the second layer 2 along the observation direction of the observer, and the first layer 1 and the second layer 2 The third layer 3 and the fourth layer 4 form the four-layer system of the present invention.

In the first embodiment of the transparent conductive surface layer anti-reflection coating layer of the present invention, the first layer 1, that is, the surface layer is I.
The TO layer has a thickness of 15 nm and its refractive index is 2.0 when the wavelength is 520 nm. The second layer 2 is a silicon dioxide layer, its thickness is 58 nm, and its refractive index is 1.4 when the wavelength is 520 nm.
6, the third layer 3 is an NbO layer, and its thickness is 45
nm and its refractive index is 2.2 when the wavelength is 520 nm. The fourth layer is an NbSiO layer and has a thickness of 67 nm and a refractive index of 1.8 when the wavelength is 520 nm.

The wavelength range of visible light is 400 to 700.
When the wavelength of a specific light ray is selected within this range and experimental detection is performed on the front surface 7 of the first layer 1, the reflectance of the transparent conductive surface layer with antireflection coating layer of the present invention is And the corresponding numerical relationship between the wavelength of visible light and the wavelength of visible light were obtained (see Table 1).

Table 1 Wavelength (nm) Reflectivity (%) 460 9.3x10^-2 480 8.1x10^-2 500 9.1x10^-2 520 9.6x10^-2 540 7.9x10^-2 560 6.1x10^-2 580 9.7x10^-2 600 2.6x10^-1 As can be seen from Table 1 above, the transparent conductive surface layer of the present invention is present.
The four-layer structure of the anti-reflection coating layer has a visible light wavelength of 460n.
The reflection coefficient is 0.3 when m to 600 nm.
% Or less, and this low reflectance adversely affects human vision.
Since it does not blur, it can be used as an optical anti-reflection coating layer for the display industry.
You can

In the second embodiment of the transparent conductive surface layer anti-reflection coating layer of the present invention, the first layer 1, that is, the surface layer is I.
The TO layer has a thickness of 15 nm and its refractive index is 2.0 when the wavelength is 520 nm. The second layer 2 is a silicon dioxide layer and has a thickness of 58 nm and a refractive index of 1.
46. The third layer 3 is an NbO layer having a thickness of 45 nm and a refractive index of 520 n.
If m, then 2.1. The fourth layer 4 is TaO
It is a layer, its thickness is 57 nm, and its refractive index is 1.95 when the wavelength is 520 nm.

The wavelength range of visible light is 400 nm to 7
It is 00 nm, and as a result of performing experimental detection on the front surface 7 of the first layer 1 by selecting a wavelength of a specific light ray within this range, the reflectance of the transparent conductive surface layer with antireflection coating layer of the present invention The numerical relationship corresponding to the visible light wavelength of was obtained (see Table 2).

Table 2 Wavelength (nm) reflectance
(%) 460 6.46x10^-2 480 6.70x10^-2 500 6.45x10^-2 520 5.96 x 10^-2 540 5.35x10^-2 560 4.84x10^-2 580 4.55x10^-2 600 4.55x10^-2 As can be seen from Table 2 above, the transparent conductive surface layer of the present invention is provided.
The four-layer structure of the antireflection coating layer has a visible light wavelength of 460 nm.
To 600 nm, the reflection coefficient is 0.0
This is below 7%, and this low reflectance has a negative effect on human vision.
Since it does not extend, use it as the optical anti-reflection coating layer of the display
You can

The manufacturing steps of the embodiment of the transparent conductive surface layer anti-reflection coating layer of the present invention are as follows.

1. A sputtering process is performed on the glass substrate by an alternating current electric magnetron electrode sputtering method, NbSi or Ta is used as a target material used in the sputtering process, and a temperature of the glass substrate is set to 100 to 3 by a heater.
When the target material and the glass substrate are held at 00 ° C. and the sputtering process is performed, the distance between them is 15 cm.
And the mixed gas of Ar and O ₂ is mixed in and the pressure of the mixed gas is maintained at 2 mTorr.
A glass substrate having a bSiO or TaO layer (fourth layer) was obtained.

2. The glass substrate having the NbSiO or TaO layer obtained in step 1 is subjected to a sputtering process by an AC electric magnetron electrode sputtering method, Nb is adopted as a target material used when performing the sputtering process, and the glass substrate is heated by a heater. Temperature is maintained at 100 to 300 ° C., the distance between the target material and the glass substrate during the sputtering process is maintained at 15 cm, and Ar and O ₂
Mixed gas, and the pressure of the mixed gas is 2.5 mT
When held at orr, the NbO layer (third layer) is NbSiO.
Alternatively, a glass substrate formed above the TaO layer (fourth layer) was obtained.

3. The glass substrate having the fourth layer and the third layer obtained in step 2 by the magnetron electrode sputtering method is subjected to a sputtering process, and SiO is adopted as a target material used when performing the sputtering process, and the glass is heated by a heater. The temperature of the substrate is kept at 100 to 300 ° C., the distance between the target material and the glass substrate during the sputtering process is kept at 15 cm, and a mixed gas of Ar and O ₂ is mixed in, and the pressure of the mixed gas is adjusted. When held at 2 mTorr,
Obtain a glass substrate in which a silicon dioxide layer (second layer) is formed on an NbO layer (third layer) and an NbO layer (third layer) is formed above an NbSiO or TaO layer (fourth layer). did.

4. As a target material used when performing sputtering on the glass substrate having the second layer, the third layer, and the fourth layer obtained in step 3 by the DC electric or DC electric pulsed magnetron electrode sputtering method, and performing the sputtering process ITO is used, and the temperature of the glass substrate is adjusted to 10 by a heater.
When the temperature is maintained at 0 to 300 ° C., the distance between the target material and the glass substrate during the sputtering process is maintained at 15 cm, the mixed gas of Ar and O ₂ is mixed, and the pressure of the mixed gas is maintained at 3 mTorr. The ITO layer (first layer) is located on the silicon dioxide layer (second layer), the silicon dioxide layer (second layer) is formed on the NbO layer (third layer), and the NbO layer (third layer) is formed. ) Is NbSiO or TaO
The glass substrate of the embodiment of the present invention formed above the layer (fourth layer) was obtained.

[0028]

The above description is summarized, and the transparent conductive surface layer with antireflection coating layer of the present invention has many excellent points as described below. 1. In the transparent conductive surface layer anti-reflection coating layer of the present invention, the sheet resistance value of the transparent conductive surface layer (ITO layer) changes according to the change of the thickness of the surface layer, and the thickness of the surface layer is 1 in the experiment.
As a result of testing the case of 0 to 40 nm, the surface resistance value is approximately 400 to 900 Ω / cm 2, so it was confirmed that the transparent conductive surface layer had good conductivity, and it was used in the display industry. In this case electromagnetic interference can be reduced.

2. The transparent conductive surface layer anti-reflection coating layer of the present invention has a low reflectance of 0.3% or less under visible light, and the transparent conductive surface layer has a refractive index of 1.
Since it is 9 to 2.1, it does not adversely affect the human eye when it is used in the display industry, and can meet the standard of visual requirements. And 450 g / cm with a sharp pen made of a resin condensate as a raw material for the transparent conductive surface layer.
As a result of rubbing 300,000 times back and forth due to the pressure of ² , the friction scratches can correspond to the MIL-C-48497 standard (friction scratches standard of the US Army Army) by an experiment, so the transparent conductive surface layer and the antireflection coating layer. Was confirmed to be used in a touch panel type display.

3. Since the transparent conductive surface layer having an anti-reflection coating layer of the present invention can directly form an electrical contact on the transparent conductive surface layer, when the conventional reflective optical coating layer is used for a display, a conductive layer (for example, ITO) is used. Since the (layer) is surrounded by the inertia layer (silicon dioxide layer), it is possible to solve problems such as contamination that forms a small bright spot when ultrasonic welding needs to be performed and a reduction in yield during mass production.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing an embodiment of a transparent conductive surface layer anti-reflection coating layer of the present invention.

[Explanation of symbols]

1 first layer 2 Second layer 3 Third layer 4th layer 5 boundary 6 substrate 7 Upper surface

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Zhang Shogi             8 Hsinchu Road, Hsinchu City, Hsinchu City, Taiwan F term (reference) 4F100 AA17B AA17C AA17D AA20D                       AA33E AT00A BA05 BA07                       BA10A BA10E BA13 CC00                       EH66B GB41 JG01E JL02                       JN01E JN06 JN18B JN18C                       JN18D JN18E YY00B YY00C                       YY00D YY00E                 5G307 FA01 FA02 FB01 FC10

Claims (6)

[Claims] 1. A first layer, a second layer, a third layer, and a fourth layer, each having a four-layer structure and formed on one substrate, and the four-layer structure is counted from the side farther from the substrate. The first layer is a transparent conductive surface layer, the refractive index of which is 1.9 to 2.1 when the wavelength is 520 to 550 nm, and the thickness of the first layer is 10 to 40 nm.
And the second layer is an oxide layer and has a wavelength of 520 to 55.
When it is 0 nm, its refractive index is 1.45 to 1.5.
0, the thickness of the second layer is 30 to 60 nm, the third layer is an oxide layer, and the wavelength is 520 to 55.
When the thickness is 0 nm, the refractive index is 2.1 to 2.3, the thickness of the third layer is 30 nm to 80 nm, the fourth layer is an oxide layer, and the wavelength is 520 to 55.
When the thickness is 0 nm, the refractive index is 1.9 to 2.1, and the thickness of the fourth layer is 40 to 80 nm. 2. The transparent conductive surface layer anti-reflection coating layer according to claim 1, wherein ITO is used as a material of the first layer. 3. The transparent conductive surface layer-having antireflection coating layer according to claim 1, wherein silicon dioxide is used as a material of the second layer. 4. The anti-reflection coating layer having a transparent conductive surface layer according to claim 1, wherein NbO is used as a material of the third layer. 5. The transparent conductive surface layer anti-reflection coating layer according to claim 1, wherein NbSiO or TaO is used as a material of the fourth layer. 6. The transparent conductive surface layer-having antireflection coating layer according to claim 1, wherein the fourth layer is manufactured by a sputtering apparatus.