JP2003248316A5 - - Google Patents
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- Publication number
- JP2003248316A5 JP2003248316A5 JP2002049963A JP2002049963A JP2003248316A5 JP 2003248316 A5 JP2003248316 A5 JP 2003248316A5 JP 2002049963 A JP2002049963 A JP 2002049963A JP 2002049963 A JP2002049963 A JP 2002049963A JP 2003248316 A5 JP2003248316 A5 JP 2003248316A5
- Authority
- JP
- Japan
- Prior art keywords
- hydrogen atom
- fluorine atom
- group
- atom
- acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052731 fluorine Inorganic materials 0.000 claims 4
- 125000001153 fluoro group Chemical group F* 0.000 claims 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 4
- 239000002253 acid Substances 0.000 claims 3
- 125000000217 alkyl group Chemical group 0.000 claims 2
- 239000003513 alkali Substances 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 125000001309 chloro group Chemical group Cl* 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 125000004093 cyano group Chemical group *C#N 0.000 claims 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims 1
- 230000005855 radiation Effects 0.000 claims 1
- 239000011347 resin Substances 0.000 claims 1
- 229920005989 resin Polymers 0.000 claims 1
- 239000002904 solvent Substances 0.000 claims 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002049963A JP3841400B2 (ja) | 2002-02-26 | 2002-02-26 | ポジ型レジスト組成物 |
| US10/372,240 US6811947B2 (en) | 2002-02-26 | 2003-02-25 | Positive resist composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002049963A JP3841400B2 (ja) | 2002-02-26 | 2002-02-26 | ポジ型レジスト組成物 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003248316A JP2003248316A (ja) | 2003-09-05 |
| JP2003248316A5 true JP2003248316A5 (enExample) | 2005-04-07 |
| JP3841400B2 JP3841400B2 (ja) | 2006-11-01 |
Family
ID=28662342
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002049963A Expired - Fee Related JP3841400B2 (ja) | 2002-02-26 | 2002-02-26 | ポジ型レジスト組成物 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6811947B2 (enExample) |
| JP (1) | JP3841400B2 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7160666B2 (en) * | 2002-03-06 | 2007-01-09 | Fuji Photo Film Co., Ltd. | Photosensitive resin composition |
| AU2005316833B2 (en) * | 2004-12-17 | 2012-03-08 | Bionovo, Inc. | Estrogenic extracts of Morus alba and uses thereof |
| JP4505357B2 (ja) * | 2005-03-16 | 2010-07-21 | 富士フイルム株式会社 | 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法 |
| WO2013119134A1 (en) * | 2012-10-16 | 2013-08-15 | Eugen Pavel | Photoresist with rare-earth sensitizers |
| US11820735B2 (en) * | 2018-04-12 | 2023-11-21 | Sumitomo Chemical Company, Limited | Salt, acid generator, resist composition and method for producing resist pattern |
| JP7407586B2 (ja) * | 2019-12-19 | 2024-01-04 | 東京応化工業株式会社 | レジスト組成物、レジストパターン形成方法及び酸拡散制御剤 |
| US20230087992A1 (en) * | 2021-07-30 | 2023-03-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photosensitive material for photoresist and lithography |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5258257A (en) * | 1991-09-23 | 1993-11-02 | Shipley Company Inc. | Radiation sensitive compositions comprising polymer having acid labile groups |
| JPH06202334A (ja) * | 1993-01-04 | 1994-07-22 | Japan Synthetic Rubber Co Ltd | 感放射線性樹脂組成物 |
| JPH08101508A (ja) * | 1994-09-30 | 1996-04-16 | Nippon Zeon Co Ltd | レジスト組成物 |
| TWI250379B (en) * | 1998-08-07 | 2006-03-01 | Az Electronic Materials Japan | Chemical amplified radiation-sensitive composition which contains onium salt and generator |
| EP1131677B1 (en) | 1998-09-23 | 2005-08-03 | E.I. Dupont De Nemours And Company | Photoresists, polymers and processes for microlithography |
| EP1087260A4 (en) * | 1999-02-15 | 2002-01-16 | Clariant Finance Bvi Ltd | PHOTO SENSITIVE RESIN COMPOSITION |
| KR20020012206A (ko) | 1999-05-04 | 2002-02-15 | 메리 이. 보울러 | 플루오르화 중합체, 포토레지스트 및 마이크로리소그래피방법 |
| US6468712B1 (en) | 2000-02-25 | 2002-10-22 | Massachusetts Institute Of Technology | Resist materials for 157-nm lithography |
| JP4838437B2 (ja) * | 2000-06-16 | 2011-12-14 | Ｊｓｒ株式会社 | 感放射線性樹脂組成物 |
| US6749986B2 (en) * | 2000-09-08 | 2004-06-15 | Shipley Company, L.L.C. | Polymers and photoresist compositions for short wavelength imaging |
| US20020155376A1 (en) * | 2000-09-11 | 2002-10-24 | Kazuhiko Hashimoto | Positive resist composition |
| JP4190167B2 (ja) * | 2000-09-26 | 2008-12-03 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
| KR100845394B1 (ko) | 2000-10-31 | 2008-07-09 | 다이셀 가가꾸 고교 가부시끼가이샤 | 전자 흡인성기 함유 단량체 및 그의 제조법 |
| JP4034538B2 (ja) | 2000-10-31 | 2008-01-16 | 株式会社東芝 | フォトレジスト用高分子化合物、単量体化合物、感光性樹脂組成物、これを用いたパターン形成方法、および電子部品の製造方法 |
| US6794109B2 (en) * | 2001-02-23 | 2004-09-21 | Massachusetts Institute Of Technology | Low abosorbing resists for 157 nm lithography |
| US6610456B2 (en) * | 2001-02-26 | 2003-08-26 | International Business Machines Corporation | Fluorine-containing styrene acrylate copolymers and use thereof in lithographic photoresist compositions |
| JP4418606B2 (ja) * | 2001-04-11 | 2010-02-17 | パナソニック株式会社 | パターン形成材料及びパターン形成方法 |
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2002
- 2002-02-26 JP JP2002049963A patent/JP3841400B2/ja not_active Expired - Fee Related
-
2003
- 2003-02-25 US US10/372,240 patent/US6811947B2/en not_active Expired - Lifetime