JP2003238297A5 - - Google Patents
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- Publication number
- JP2003238297A5 JP2003238297A5 JP2002373146A JP2002373146A JP2003238297A5 JP 2003238297 A5 JP2003238297 A5 JP 2003238297A5 JP 2002373146 A JP2002373146 A JP 2002373146A JP 2002373146 A JP2002373146 A JP 2002373146A JP 2003238297 A5 JP2003238297 A5 JP 2003238297A5
- Authority
- JP
- Japan
- Prior art keywords
- nitride semiconductor
- semiconductor substrate
- substrate
- angled
- angle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 150000004767 nitrides Chemical class 0.000 claims 11
- 239000004065 semiconductor Substances 0.000 claims 11
- 239000000758 substrate Substances 0.000 claims 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 229910003465 moissanite Inorganic materials 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 229910052596 spinel Inorganic materials 0.000 claims 1
- 239000011029 spinel Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002373146A JP4337132B2 (ja) | 1998-09-16 | 2002-12-24 | 窒化物半導体基板及びそれを用いた窒化物半導体素子 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26169498 | 1998-09-16 | ||
| JP10-261694 | 1998-09-16 | ||
| JP2002373146A JP4337132B2 (ja) | 1998-09-16 | 2002-12-24 | 窒化物半導体基板及びそれを用いた窒化物半導体素子 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27830898A Division JP3669848B2 (ja) | 1998-09-16 | 1998-09-30 | 窒化物半導体レーザ素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003238297A JP2003238297A (ja) | 2003-08-27 |
| JP2003238297A5 true JP2003238297A5 (https=) | 2005-09-02 |
| JP4337132B2 JP4337132B2 (ja) | 2009-09-30 |
Family
ID=27790305
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002373146A Expired - Fee Related JP4337132B2 (ja) | 1998-09-16 | 2002-12-24 | 窒化物半導体基板及びそれを用いた窒化物半導体素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4337132B2 (https=) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7118813B2 (en) | 2003-11-14 | 2006-10-10 | Cree, Inc. | Vicinal gallium nitride substrate for high quality homoepitaxy |
| US7339255B2 (en) * | 2004-08-24 | 2008-03-04 | Kabushiki Kaisha Toshiba | Semiconductor device having bidirectionally inclined toward <1-100> and <11-20> relative to {0001} crystal planes |
| JP5023318B2 (ja) * | 2005-05-19 | 2012-09-12 | 国立大学法人三重大学 | ３−５族窒化物半導体積層基板、３−５族窒化物半導体自立基板の製造方法、及び半導体素子 |
| WO2007008394A1 (en) | 2005-07-11 | 2007-01-18 | Cree, Inc. | Laser diode orientation on mis-cut substrates |
| EP2094439A2 (en) * | 2006-12-28 | 2009-09-02 | Saint-Gobain Ceramics & Plastics, Inc. | Sapphire substrates and methods of making same |
| EP2003696B1 (en) * | 2007-06-14 | 2012-02-29 | Sumitomo Electric Industries, Ltd. | GaN substrate, substrate with epitaxial layer, semiconductor device and method of manufacturing GaN substrate |
| JP5139010B2 (ja) * | 2007-09-06 | 2013-02-06 | 住友電気工業株式会社 | Ｉｉｉ族窒化物結晶の成長方法 |
| JP5099763B2 (ja) * | 2007-12-18 | 2012-12-19 | 国立大学法人東北大学 | 基板製造方法およびｉｉｉ族窒化物半導体結晶 |
| KR101123352B1 (ko) * | 2010-02-24 | 2012-03-23 | 한국해양대학교 산학협력단 | 경사면 실리콘 기판을 이용한 비극성 질화물 박막성장 방법 |
| JP5590665B2 (ja) * | 2010-05-28 | 2014-09-17 | 学校法人関西学院 | ナノメーター標準原器、標準試料、ナノメーター標準原器の製造方法、及び標準試料の製造方法 |
| KR102343099B1 (ko) * | 2017-06-07 | 2021-12-24 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 |
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2002
- 2002-12-24 JP JP2002373146A patent/JP4337132B2/ja not_active Expired - Fee Related
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