JP2003233188A5 - - Google Patents

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JP2003233188A5
JP2003233188A5 JP2002032449A JP2002032449A JP2003233188A5 JP 2003233188 A5 JP2003233188 A5 JP 2003233188A5 JP 2002032449 A JP2002032449 A JP 2002032449A JP 2002032449 A JP2002032449 A JP 2002032449A JP 2003233188 A5 JP2003233188 A5 JP 2003233188A5
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group
alicyclic hydrocarbon
hydrocarbon group
general formula
linear
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JP2002032449A
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Japanese (ja)
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JP2003233188A (en
JP3907171B2 (en
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Claims (2)

(A)下記一般式(I)で表される繰り返し単位、及び一般式(II)で表される繰り返し単位を含有する、酸の作用によりアルカリ現像液に対する溶解速度が増大する樹脂、及び、(B)活性光線又は放射線の照射により酸を発生する化合物を含有するポジ型レジスト組成物。
Figure 2003233188
一般式(I)において、R1は水素原子又はメチル基を表し、Aは単結合又は連結基を表し、ALGは下記一般式(pI)〜一般式(pV)のいずれかを表す。
Figure 2003233188
式中、R11は、メチル基、エチル基、n−プロピル基、イソプロピル基、n−ブチル基、イソブチル基又はsec−ブチル基を表し、Zは、炭素原子とともに脂環式炭化水素基を形成するのに必要な原子団を表す。
12〜R16は、各々独立に、炭素数1〜4個の、直鎖もしくは分岐のアルキル基又は脂環式炭化水素基を表す。但し、R12〜R14のうち少なくとも1つ、及びR15、R16のいずれかは脂環式炭化水素基を表す。
17〜R21は、各々独立に、水素原子、炭素数1〜4個の、直鎖もしくは分岐のアルキル基又は脂環式炭化水素基を表し、但し、R17〜R21のうち少なくとも1つは脂環式炭化水素基を表す。また、R19、R21のいずれかは炭素数1〜4個の、直鎖もしくは分岐のアルキル基又は脂環式炭化水素基を表す。
22〜R25は、各々独立に、炭素数1〜4個の、直鎖もしくは分岐のアルキル基又は脂環式炭化水素基を表し、但し、R22〜R25のうち少なくとも1つは脂環式炭化水素基を表す。また、R23とR24は、互いに結合して環を形成していてもよい。
Figure 2003233188
式(II)において、
2は、水素原子又はアルキル基を表す。
3は、脂環式炭化水素基を表す。
4は、鎖状3級アルキル基、1−アルコキシアルキル基、テトラヒドロピラニル基又はテトラヒドロフラニル基を表す。
1及びA2は、各々独立に、単結合、アルキレン基、エーテル基、カルボニル基、エステル基のいずれか、またはその組み合わせを表す。
(A) A resin containing a repeating unit represented by the following general formula (I) and a repeating unit represented by the following general formula (II) whose dissolution rate in an alkaline developer is increased by the action of an acid; B) A positive resist composition containing a compound that generates an acid upon irradiation with actinic rays or radiation.
Figure 2003233188
In General Formula (I), R 1 represents a hydrogen atom or a methyl group, A represents a single bond or a linking group, and ALG represents any one of the following General Formula (pI) to General Formula (pV).
Figure 2003233188
In the formula, R 11 represents a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group or a sec-butyl group, and Z forms an alicyclic hydrocarbon group together with a carbon atom. Represents the atomic group necessary to do.
R 12 to R 16 each independently represents a linear or branched alkyl group having 1 to 4 carbon atoms or an alicyclic hydrocarbon group. However, at least one of R 12 to R 14 and any one of R 15 and R 16 represents an alicyclic hydrocarbon group.
R 17 to R 21 each independently represents a hydrogen atom, a linear or branched alkyl group having 1 to 4 carbon atoms, or an alicyclic hydrocarbon group, provided that at least one of R 17 to R 21 Represents an alicyclic hydrocarbon group. Further, either R 19 or R 21 represents a linear or branched alkyl group or alicyclic hydrocarbon group having 1 to 4 carbon atoms.
R 22 to R 25 each independently represents a linear or branched alkyl group having 1 to 4 carbon atoms or an alicyclic hydrocarbon group, provided that at least one of R 22 to R 25 is a fat Represents a cyclic hydrocarbon group. R 23 and R 24 may be bonded to each other to form a ring.
Figure 2003233188
In formula (II):
R 2 represents a hydrogen atom or an alkyl group.
R 3 represents an alicyclic hydrocarbon group.
R 4 represents a chain tertiary alkyl group, a 1-alkoxyalkyl group, a tetrahydropyranyl group, or a tetrahydrofuranyl group.
A 1 and A 2 each independently represents a single bond, an alkylene group, an ether group, a carbonyl group, an ester group, or a combination thereof.
請求項1に記載のポジ型レジスト組成物によりレジスト膜を形成し、当該レジスト膜を露光、現像することを特徴とするパターン形成方法。A pattern forming method comprising: forming a resist film from the positive resist composition according to claim 1; and exposing and developing the resist film.
JP2002032449A 2002-02-08 2002-02-08 Positive resist composition Expired - Fee Related JP3907171B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002032449A JP3907171B2 (en) 2002-02-08 2002-02-08 Positive resist composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002032449A JP3907171B2 (en) 2002-02-08 2002-02-08 Positive resist composition

Publications (3)

Publication Number Publication Date
JP2003233188A JP2003233188A (en) 2003-08-22
JP2003233188A5 true JP2003233188A5 (en) 2005-04-07
JP3907171B2 JP3907171B2 (en) 2007-04-18

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JP2002032449A Expired - Fee Related JP3907171B2 (en) 2002-02-08 2002-02-08 Positive resist composition

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004067592A1 (en) * 2003-01-31 2004-08-12 Mitsubishi Rayon Co., Ltd. Resist polymer and resist composition
WO2004096787A1 (en) * 2003-04-28 2004-11-11 Mitsubishi Chemical Corporation Polycyclic lactones, (meth)acrylates having polycyclic lactone structures, and process for production thereof
JP4191103B2 (en) 2004-07-02 2008-12-03 東京応化工業株式会社 Positive resist composition and resist pattern forming method
JP5250226B2 (en) * 2007-09-04 2013-07-31 東京応化工業株式会社 POLYMER COMPOUND, POSITIVE RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN
US8029972B2 (en) * 2007-10-11 2011-10-04 Tokyo Ohka Kogyo Co., Ltd. Resist composition and method of forming resist pattern
JP6959726B2 (en) * 2015-11-16 2021-11-05 住友化学株式会社 Method for producing compound, resin, resist composition and resist pattern

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