JP2003229639A5 - - Google Patents

Download PDF

Info

Publication number
JP2003229639A5
JP2003229639A5 JP2002027982A JP2002027982A JP2003229639A5 JP 2003229639 A5 JP2003229639 A5 JP 2003229639A5 JP 2002027982 A JP2002027982 A JP 2002027982A JP 2002027982 A JP2002027982 A JP 2002027982A JP 2003229639 A5 JP2003229639 A5 JP 2003229639A5
Authority
JP
Japan
Prior art keywords
electrode
density defect
nitride
based compound
crystal substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002027982A
Other languages
English (en)
Japanese (ja)
Other versions
JP4072351B2 (ja
JP2003229639A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2002027982A priority Critical patent/JP4072351B2/ja
Priority claimed from JP2002027982A external-priority patent/JP4072351B2/ja
Publication of JP2003229639A publication Critical patent/JP2003229639A/ja
Publication of JP2003229639A5 publication Critical patent/JP2003229639A5/ja
Application granted granted Critical
Publication of JP4072351B2 publication Critical patent/JP4072351B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2002027982A 2002-02-05 2002-02-05 窒化物系化合物半導体発光素子 Expired - Fee Related JP4072351B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002027982A JP4072351B2 (ja) 2002-02-05 2002-02-05 窒化物系化合物半導体発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002027982A JP4072351B2 (ja) 2002-02-05 2002-02-05 窒化物系化合物半導体発光素子

Publications (3)

Publication Number Publication Date
JP2003229639A JP2003229639A (ja) 2003-08-15
JP2003229639A5 true JP2003229639A5 (fr) 2005-08-18
JP4072351B2 JP4072351B2 (ja) 2008-04-09

Family

ID=27749340

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002027982A Expired - Fee Related JP4072351B2 (ja) 2002-02-05 2002-02-05 窒化物系化合物半導体発光素子

Country Status (1)

Country Link
JP (1) JP4072351B2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006294975A (ja) 2005-04-13 2006-10-26 Mitsubishi Electric Corp 半導体レーザ
CN102473806B (zh) 2009-07-22 2014-09-10 松下电器产业株式会社 发光二极管
TWI662724B (zh) * 2018-06-06 2019-06-11 海華科技股份有限公司 覆晶式發光模組

Similar Documents

Publication Publication Date Title
KR101473288B1 (ko) 발광 다이오드 디스플레이 및 그 제조 방법
JP5490997B2 (ja) 交流駆動型の発光ダイオード
JP6824343B2 (ja) 表示装置
US9337406B2 (en) GaN-based light emitting diode with current spreading structure
TW200711165A (en) Gan semiconductor light emitting element and its manufacturing method
JP2006245542A (ja) 窒化物半導体発光素子
WO2009041318A1 (fr) Élément émettant de la lumière et dispositif émettant de la lumière l'utilisant
JP2004127933A5 (fr)
JP2009071220A (ja) Ｉｉｉ族窒化物系化合物半導体発光素子
CN102456796B (zh) 半导体发光装置
JP2007266575A5 (fr)
KR20120081506A (ko) 수직형 발광소자
JP2003229638A5 (fr)
JP2005101533A (ja) 発光素子およびその製造方法
JP2006013500A (ja) 発光装置
JP2006012916A5 (fr)
JP2004207323A5 (fr)
JP2010514198A (ja) 複数のセルを有する発光素子
JP2006154793A5 (fr)
JP2010199176A (ja) 表示装置
TWI623115B (zh) 具粗化表面之薄膜式覆晶發光二極體及其製造方法
JP2003229639A5 (fr)
JP2004048067A (ja) 発光部品およびその製造方法
JP2007173549A (ja) 発光装置
TW200717886A (en) Light emitting device