JP2003229547A5 - - Google Patents

Download PDF

Info

Publication number
JP2003229547A5
JP2003229547A5 JP2002153063A JP2002153063A JP2003229547A5 JP 2003229547 A5 JP2003229547 A5 JP 2003229547A5 JP 2002153063 A JP2002153063 A JP 2002153063A JP 2002153063 A JP2002153063 A JP 2002153063A JP 2003229547 A5 JP2003229547 A5 JP 2003229547A5
Authority
JP
Japan
Prior art keywords
memory cells
random access
magnetic random
read
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002153063A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003229547A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2002153063A priority Critical patent/JP2003229547A/ja
Priority claimed from JP2002153063A external-priority patent/JP2003229547A/ja
Publication of JP2003229547A publication Critical patent/JP2003229547A/ja
Publication of JP2003229547A5 publication Critical patent/JP2003229547A5/ja
Pending legal-status Critical Current

Links

JP2002153063A 2001-11-29 2002-05-27 磁気ランダムアクセスメモリ Pending JP2003229547A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002153063A JP2003229547A (ja) 2001-11-29 2002-05-27 磁気ランダムアクセスメモリ

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001365236 2001-11-29
JP2001-365236 2001-11-29
JP2002153063A JP2003229547A (ja) 2001-11-29 2002-05-27 磁気ランダムアクセスメモリ

Publications (2)

Publication Number Publication Date
JP2003229547A JP2003229547A (ja) 2003-08-15
JP2003229547A5 true JP2003229547A5 (fr) 2005-08-25

Family

ID=27759498

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002153063A Pending JP2003229547A (ja) 2001-11-29 2002-05-27 磁気ランダムアクセスメモリ

Country Status (1)

Country Link
JP (1) JP2003229547A (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005310840A (ja) 2004-04-16 2005-11-04 Toshiba Corp 磁気ランダムアクセスメモリ
JP5065940B2 (ja) * 2008-02-28 2012-11-07 株式会社東芝 磁気記憶装置
JP2009259316A (ja) 2008-04-14 2009-11-05 Toshiba Corp 半導体記憶装置
US8750032B2 (en) 2010-04-28 2014-06-10 Hitachi, Ltd. Semiconductor recording device
KR101385637B1 (ko) 2012-10-31 2014-04-24 성균관대학교산학협력단 반도체 메모리 장치, 프로그램 방법 및 시스템

Similar Documents

Publication Publication Date Title
JP5501966B2 (ja) 多状態の不揮発性メモリ素子
JP2005259334A5 (fr)
US8279662B2 (en) Multi-bit magnetic memory with independently programmable free layer domains
TWI333207B (en) Magnetic memory cell with multiple-bit in stacked structure and magnetic memory device
RU2010129831A (ru) Устройство с магнитным туннельным переходом с раздельными трактами считывания и записи
JP2004104127A5 (fr)
JP2006140468A (ja) マグネチックｒａｍ
JP2002140899A5 (fr)
JP2002367365A5 (fr)
CN1347560A (zh) 对磁电阻存储器中单元电阻估值的装置
JP2009163860A5 (fr)
KR101323767B1 (ko) 플럭스 프로그래밍된 멀티-비트 자기 메모리
EP1612804A3 (fr) Mémoire RAM magnétorésistive (MRAM) avec mémorisation multibit par cellule
CN100527268C (zh) 使用铁磁隧道结器件的磁存储装置
US7746686B2 (en) Partitioned random access and read only memory
JP2003229547A5 (fr)
CN110164902A (zh) 一种多级单元磁存储结构及其读写方法
JP2006351061A (ja) メモリ回路
US6836429B2 (en) MRAM having two write conductors
JP2012027974A (ja) 半導体記憶装置
WO2002084706A3 (fr) Systeme de memoire a semi-conducteur magnetoresistif integre
JP2004193603A5 (fr)
CN102881333B (zh) 移位寄存器电路和芯片
CN110910924A (zh) 磁阻式随机存取存储器
JP2003249629A5 (fr)