JP2003229488A - Semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device exhibiting excellent isolation characteristic by shielding leakage signals in high frequency region propagating on the surface or the upper region of a semiconductor substrate and suppressing mutual interference in high frequency region between high frequency circuit blocks. <P>SOLUTION: In the semiconductor device 1, a first shield structure 71 is constituted of a plurality of contact holes 711 arranged to surround a radio transmission block 30 in ring-shape. A plurality of contact holes 721 constituting a second shield structure 72 are arranged in an insulation layer 20 to intercept a line passing through a gap between the adjacent contact holes 711 and 711 of the first shield structure 71 in the line connecting the radio transmission block 30 and a radio reception block 40. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a technique for ensuring high frequency band separation (isolation) between circuit blocks.

[0002]

2. Description of the Related Art With the recent development of the mobile communication field,
Mobile devices are required to have higher performance, smaller size, and lower cost, and are also required to have a transmission / reception capability using a frequency range higher than a microwave of several GHz. Conventionally, a compound semiconductor excellent in high frequency characteristics has been used for a semiconductor device provided in such a portable device, but in recent years, introduction of silicon germanium (SiGe) also into a semiconductor device using a Si-based semiconductor. Due to 5G
The characteristics have been improved to a level where it can be used in the frequency range of Hz and above. Therefore, a semiconductor device using such a Si-based semiconductor has also been put into practical use.

By the way, in semiconductor devices, the problem of mutual interference in a high frequency region, which occurs between high frequency circuit blocks formed on a semiconductor substrate, has become apparent as the degree of integration is increased and the operating frequency is increased for downsizing of devices. It has turned into. In particular, the semiconductor device using the Si-based semiconductor described above has a low resistance due to the use of a conductive material for the semiconductor substrate (for example, Bi-CMOS has a specific resistance of 10 to 15 Ω · cm). A leak signal in a high frequency range generated through the semiconductor substrate is likely to propagate. Therefore, in a semiconductor device using a Si-based semiconductor substrate, mutual interference between high frequency circuit blocks in a high frequency region becomes a serious problem.

In order to solve this problem, conventionally, an SOI (Silicon Insulator) is mounted on a semiconductor substrate.
However, it is not sufficient. Further, in Japanese Unexamined Patent Publication No. 2001-274261, in order to solve the above-mentioned conventional problems, a contact hole is formed around a high frequency circuit block in an insulating layer on a semiconductor substrate and a mesh wiring is formed on the contact hole. Then, a technique is disclosed in which a leak signal in a high frequency region is shielded to suppress mutual interference in the high frequency region between the high frequency circuit blocks.

[0005]

However, even a semiconductor device having the above-mentioned measures is not sufficient to shield a leak signal in a high frequency range propagating on the surface or the upper region of the semiconductor substrate. However, mutual interference in the high frequency range between the high frequency circuit blocks cannot be sufficiently suppressed. This is because, in the semiconductor device to which the technique disclosed above is applied, when the contact hole is viewed in the surface direction of the semiconductor substrate, a part of the leak signal is transmitted because the thickness is thin, and This is because the contact hole itself is so small that its resistance is higher than that of a metal plate or the like which is usually used as a shield plate, and its ground resistance is also high.

The present invention has been made to solve such a problem, and is a high-frequency circuit block formed by shielding a leak signal in a high-frequency region propagating on the surface or an upper region of a semiconductor substrate. It is an object of the present invention to provide a semiconductor device having excellent element isolation characteristics by suppressing mutual interference in a high frequency range between the two.

[0007]

In order to achieve the above object, the present invention provides a semiconductor device having a plurality of high-frequency circuit blocks formed from the inside of a semiconductor substrate to an insulating layer laminated on the surface thereof. A first shield structure having a plurality of contact holes arranged in a row between at least two high-frequency circuit blocks selected from a plurality of high-frequency circuit blocks in the insulating layer, and the first shield structure. A second shield structure having a plurality of contact holes arranged in a row is formed so as to block a straight line connecting the two high-frequency circuit blocks between the contact holes of the structure. Characterize.

In this semiconductor device, at least mutual interference in the high frequency region through the insulating layer between the high frequency circuit blocks in which the first shield structure and the second shield structure are formed is suppressed. Since this has a characteristic that a leak signal in a high frequency region propagates linearly, a leak signal in a high frequency region that is going to propagate between high frequency circuit blocks through an insulating layer is at least the first shield structure or This is because it is shielded by at least one contact hole belonging to any of the second shield structures, and it is possible to suppress the contact holes from propagating forward from the region in which they are arranged.

Here, in the above semiconductor device, it is not always necessary to arrange the contact holes forming the first and second shield structures in a row so that the gap between them is narrower than the wavelength of the leakage signal. It suffices that at least a straight line connecting between the selected pair of high frequency circuit blocks is formed so as to be blocked by the contact hole that constitutes either the first shield structure or the second shield structure. This is because even if a high-frequency leak signal propagates from one high-frequency circuit block to the other high-frequency circuit block in the insulating layer on the semiconductor substrate, the high-frequency leak signal propagates linearly. This is because it can be shielded by the first shield structure and the second shield structure arranged as described above.

Although the contact hole used above is formed in the thickness direction of the insulating layer, it does not indicate only the hole formed in the insulating layer, but the tungsten ( It shows a state in which a conductive material such as W) is embedded. Further, in the present specification, the term contact hole is used not only to connect the semiconductor substrate and the wiring, but also to the wiring and the wiring,
It is also used as a device that connects the element and the wiring (via hole, through hole).

Since the first shield structure and the second shield structure are arranged in parallel, it is easy to design a semiconductor device, and the high frequency circuit blocks have a high frequency region mutual mutual interference. It is desirable because it can effectively suppress interference. Further, in this semiconductor device,
Since the column-shaped shield structure is arranged in the direction intersecting the straight line connecting the selected set of high-frequency circuit blocks, mutual interference in the high-frequency region between the high-frequency circuit blocks can be reliably suppressed with a small number of contact holes. Desirable in that respect.

The cross-sectional shape of each contact hole forming these shield structures is preferably rectangular or circular from the viewpoint of ease of manufacture and shielding of high frequency signals. Further, in the semiconductor device of the present invention, it is desirable that the first shield structure and the second shield structure are arranged so as to surround one of the high frequency circuit blocks. This makes it possible to reliably suppress mutual interference due to leakage signals in the high frequency range not only between the set of high frequency circuit blocks but also between the enclosed high frequency circuit block and all other high frequency circuit blocks. This is because.

Further, in the semiconductor device of the present invention, in addition to the first shield structure and the second shield structure, the semiconductor device is formed so as to cover the upper region of one of the high frequency circuit blocks on the surface of the insulating layer. It is desirable that a high frequency shield layer connected to the ground is formed. Specifically, it is desirable that the high frequency shielding layer is a metal thin film from the viewpoint of ease of formation.

In this semiconductor device, not only mutual interference in the high frequency region between the high frequency circuit block formed on the semiconductor substrate and the high frequency circuit block is reduced, but also interference in the high frequency region with the outside of the semiconductor device is reduced. . Further, in the above semiconductor device, even with respect to a leakage signal in a high frequency range reflected and propagated by a wiring formed on the upper side, the influence of the leakage signal on the high frequency circuit block in which at least the upper region is covered with the wiring layer is affected. Never receive.

[0015]

DESCRIPTION OF THE PREFERRED EMBODIMENTS (Embodiment 1) A semiconductor device 1 according to Embodiment 1 will be described with reference to FIGS. 1 and 2. 1 is a cross-sectional view of the semiconductor device 1, and FIG.
FIG. As shown in FIG. 1, in the semiconductor device 1, the insulating layer 20 is laminated on the surface 11 of the silicon substrate 10. From the inside of the silicon substrate 10 to the insulating layer 20
A wireless transmission block 30 and a wireless reception block 40 are formed with a gap between them in an area extending to the inside of.

Although both of these blocks 30 and 40 are not actually formed by being divided into individual circuit blocks as shown in the figure, in the following, for convenience of explanation, a plurality of circuits formed in the device will be described. Is collectively shown for each function in circuit block units. The wireless transmission block 30 is a block including a driver amplifier unit that specifically amplifies a modulated signal wave, a power amplifier unit that includes multi-stage coupled transistors that perform power amplification, and a control circuit unit that performs power control. . The wireless transmission block 30 has connection terminals 31, 32, and 33 formed on the surface on the insulating layer 20 side.

On the other hand, the radio reception block 40 is a block composed of a low noise reception amplifier section, a frequency mixing section, a local oscillation section, an intermediate frequency signal processing circuit section and the like. The wireless reception block 40 has a connection terminal 4 on the surface on the insulating layer 20 side.
1, 42, 43 are formed. In the portion of the silicon substrate 10 extending from the surface 11 to the inside thereof, the conductor layer 50 is formed so as to surround the wireless transmission block 30.
Has been laid. The conductor layer 50 is a thin film made of a conductor formed by performing ion implantation and diffusion on the silicon substrate 10 before the insulating layer 20 is laminated. As the material, metals such as Al, Au, Cu and W are desirable.

On the silicon substrate 10, a trench structure 60 is formed adjacent to the inside and outside of the conductor layer 50 as viewed from the side of the wireless transmission block 30. Trench structure 6
0 consists of a shallow trench 61 and a deep trench 62. The deep trench 62 is formed by etching the silicon substrate 10 to form a groove, oxidizing the side wall of the groove, and filling the inside of the groove with polysilicon (the difference in thermal conductivity between silicon is relatively small). The shallow trench 61 is formed by depositing an oxide film on the deep trench 62 and planarizing it by CMP or the like.

The trench structure 60 plays a role of reducing leakage signals propagated through the inside of the silicon substrate 10 and stray capacitance between collectors, and improving high frequency characteristics of the semiconductor device 1. As shown in Figure 1,
Above the conductor layer 50 inside the insulating layer 20,
First shield structure 71 and second shield structure 72
And are formed so as to surround the wireless transmission block 30. Regarding the arrangement form of the shield structures 71 and 72,
This will be described with reference to FIG.

As shown in FIG. 2, the first shield structure 71 is composed of a plurality of contact holes 711 surrounding the wireless transmission block 30 in a ring shape as described above. The contact holes 711 have a rectangular cross section and are arranged in rows at substantially regular intervals. The gap between the contact holes 711 adjacent to each other is
It is set to be narrower than the width of the contact hole 711. However, the contact hole 711 is not formed in the region where the lead lines 82 and 83 described later are formed. The area where the contact hole 711 is not formed is a portion except between the wireless transmission block 30 and the wireless reception block 40, and in FIG.
The lower part of 0.

The second shield structure 72 is composed of a plurality of contact holes 721 arranged in a ring shape on the outer side of the first shield structure 71. The respective contact holes 721 are arranged so as to interpolate the gap between the contact holes 711 adjacent to each other. In other words, the contact hole 721 is within the insulating layer 20, and within the straight line connecting the wireless transmission block 30 and the wireless reception block 40,
Adjacent contact hole 711 and contact hole 7
It is arranged in such a manner that a straight line passing through the gap with 11 is blocked.

A plurality of contact holes 711, 72 between the first shield structure 71 and the second shield structure 72.
1 are arranged in a staggered manner so as to surround the wireless transmission block 30 as a whole. Each of the contact hole 711 and the contact hole 721 is formed by depositing a metal material using a sputtering method or the like in a hole formed through a photoetching process in the thickness direction of the insulating layer 20. The material is
For example, Al, Au, Cu, W or the like is used.

Returning to FIG. 1, an intermediate wiring layer 80 is formed inside the insulating layer 20 and at the upper ends of the shield structures 71 and 72. The intermediate wiring layer 80 is formed so as to connect all the contact holes 711 and 721. The intermediate wiring layer 80 is also a thin film made of a conductor, like the conductor layer 50. The material is Al, A
It is desirable to use a metal such as u, Cu or W.

As shown in FIG. 2, the intermediate wiring layer 80 is formed in a ring shape so as to surround the wireless transmission block 30. However, similarly to the shield structures 71 and 72, the intermediate wiring layer 80 is not formed in the portions where the lead wires 82 and 83 are formed, but has an opening. A lead-out portion 81 is formed from one end of the intermediate wiring layer 80 toward the wireless transmission block 30. The lead-out portion 81 is connected to the connection terminal 31 via the contact hole 73.

Lead lines 82 and 83 are formed in the same layer as the intermediate wiring layer 80 inside the insulating layer 20. The lead lines 82 and 83 are formed from the upper part of the wireless transmission block 30 to the edge of the device through the regions where the shield structures 71 and 72 and the intermediate wiring layer 80 are not formed. The ends of the lead wires 82 and 83 above the wireless transmission block 30 are respectively formed in the contact holes 7.
It is connected to the connection terminals 32 and 33 via 4 and 75.

A third shield structure 91 and a fourth shield structure 92 are formed from the upper end of the intermediate wiring layer 80 to the upper end surface of the insulating layer 20. The third shield structure 91 and the fourth shield structure 92 are the same as the first shield structure 71 and the second shield structure 7 described above.
Similar to 2, each of the contact holes is composed of a plurality of contact holes, and is formed in a zigzag pattern so as to surround the wireless transmission block 30. These shield structures 91,
92 is connected to the intermediate wiring layer 80. The arrangement form and configuration are the same as those in FIG. 2 described above, and thus the description thereof is omitted here.

A high frequency shield layer 100 is formed on the surface of the insulating layer 20 so as to cover the region where the shield structures 91 and 92 are formed. The high frequency shielding layer 100 is
This is a metal thin film layer and is connected to the shield structures 91 and 92. That is, the high frequency shield layer 100 is formed so as to cover the entire area above the wireless transmission block 30. Further, one end of the high frequency shield layer 100 is connected to the ground.

Element isolation in the high frequency range in the semiconductor device 1 having the above structure will be described with reference to FIG. FIG. 3 is an enlarged view of a part of the above-described FIG. 2, that is, a part between the wireless transmission block 30 and the wireless reception block 40. As shown in FIG. 3, the wireless transmission block 3
The high frequency signal leaking from 0 tries to propagate linearly in all directions. In FIG. 3, among them, the signal propagating toward the wireless reception block 40 is a leak signal Si.
g. 1-Sig. 4 schematically shows.

Leakage signal Sig. 1 and Sig. 3 is
It is intended to propagate from the wireless transmission block 30 toward the wireless reception block 40 in the shortest distance. Among these, the leakage signal Sig. Regarding No. 1, it collides with one of the contact holes 711 forming the first shield structure 71 and is prevented from propagating further. Leakage signal Sig. 1 is released to the ground through the intermediate wiring layer 80, the shield structures 91 and 92, the high frequency shielding layer 100 and the like.

On the other hand, the leakage signal Sig. 3 tries to propagate toward the wireless reception block 40 by passing between the contact holes 711 and the contact holes 711 forming the first shield structure 71. However, the leakage signal Sig. 3 collides with one of the plurality of contact holes 721 forming the second shield structure 72 and is prevented from propagating further. Leakage signal Sig. 3 is the leakage signal Sig. Similar to 1,
Escape to the ground.

Next, among the high frequency signals leaked from the wireless transmission block 30, the leak signal Sig. 1, Sig. Three
, The leakage signal Sig. Propagates so as to have an angle with these paths. 2 and Sig. 4 also, the plurality of contact holes 7 forming the first shield structure 71 or the second shield structure 72.
It collides with either 11, 721 and is blocked from propagating further.

Further, although not shown, a high frequency signal tends to leak from the wireless transmission block 30 even in the thickness direction of the insulating layer 20. Such a leak signal is prevented from propagating from the semiconductor device 1 to the outside by the high frequency shielding layer 100 formed on the surface of the insulating layer 20. The high frequency shield layer 100 also plays a role of shielding a high frequency signal propagating from the outside of the semiconductor device 100 toward the wireless transmission block 30.

Further, a leak signal in a high frequency range, which is about to propagate on the surface 11 or inside the silicon substrate 10, is surely shielded by the conductor layer 50 and the trench structure 60 as in the conventional semiconductor device. Therefore, the semiconductor device 1
In this case, the isolation in the high frequency range between the wireless transmission block 30 and the wireless reception block 40 is reliably ensured, and the wireless transmission block 30 is protected from the interference due to the leak signal propagating from the outside of the device.

In the semiconductor device 1, the shield structure 7 is provided so as to surround the wireless transmission block 30.
1, 72, 91, and 92 are formed, and the high-frequency shielding layer 100 is formed so as to cover the upper part thereof, but these formation positions may be around the wireless reception block 40, and both circuit blocks 30 and It may be formed around 40. (Second Embodiment) A semiconductor device 2 according to the second embodiment will be described with reference to FIG.

As shown in FIG. 2, the semiconductor device 2 has a structure similar to that of the semiconductor device 1. The same parts as those used in the semiconductor device 1 are used and the description thereof is omitted. The semiconductor device 2 has a wireless transmission block 35.
Has a region functioning as a bipolar transistor (not shown). The connection terminal 36 formed in the emitter section in this region is connected to the high frequency shield layer 100 immediately above via the contact hole 76. This is the difference between the semiconductor device 1 and the semiconductor device 2. Other configurations are similar to those of the semiconductor device 1.

Therefore, in the semiconductor device 2, the emitter portions of the bipolar transistor region are shield structures 71 and 7.
Since it is connected to the high-frequency shielding layer 100 and is connected to the ground without interposing 2, 91, 92 and the intermediate wiring layer 50, the emitter section is connected to the ground with a short wiring distance. In the semiconductor device 2 as described above, the isolation between the circuit blocks in the high frequency region is secured similarly to the semiconductor device 1 described above, but in addition to this, since the wiring distance between the emitter section and the ground is short, Problems such as generation of an inductor component and deterioration of high frequency characteristics of the device do not occur. In particular, when the bipolar transistor region has SiGe, it is effective to have such a configuration.

Further, in a normal semiconductor device, when the bipolar transistor region amplifies high frequency power, the amount of heat generated is large, which may affect the entire device. On the other hand, in the semiconductor device 2, since the emitter section is connected to the high frequency shielding layer 100, which is a metal thin film layer, with a short wiring distance, the heat generated in the bipolar transistor region is generated by the contact hole 76 and the high frequency shielding layer 100. Is efficiently discharged to the outside of the device via the. Therefore, the semiconductor device 2 is not easily affected by the heat generated in the bipolar transistor region, and stable characteristics are maintained. (Third Embodiment) A semiconductor device 3 according to the third embodiment will be described with reference to FIG. FIG. 5 shows an intermediate cross section between the surface 11 of the silicon substrate 10 and the intermediate wiring layer 50. Further, although FIG. 5 shows only the region between the wireless transmission block 30 and the wireless reception block 40 in the semiconductor device 3, the structure other than the shape and arrangement of the contact holes is the same as that of the semiconductor device 1. is there.

As shown in FIG. 5, in the semiconductor device 3, the fifth shield structure 73 and the sixth shield structure 7 are provided.
The radio transmission block 30 is doubly surrounded by 4. The structure of the contact holes 731 and 741 forming these shield structures 73 and 74 is similar to that of the contact holes 711 and 721. The contact holes 731 and 741 have a rectangular cross section.

Contact holes 731 and 741 respectively
Are arranged so that their side walls form an angle of about 45 ° with respect to the row direction. Further, each of the contact holes 741 forming the sixth shield structure 74 is the fifth shield structure in the straight line connecting the wireless transmission block 30 and the wireless reception block 40 inside the insulating layer 20. 7
Similar to the above-described semiconductor devices 1 and 2, the arrangement is such that the straight line passing through the gap between the contact hole 731 and the contact hole 731 in 3 is blocked.

In the semiconductor devices 1 and 2 described above, the high frequency signal leaked from the wireless transmission block 30 is applied to the contact hole 7.
It is possible that a part of the signal may return to the wireless transmission block 30 by colliding with the surface of 1, 72, 91, 92. On the other hand, in the semiconductor device 3, since the contact holes 731 and 741 are arranged as described above, even if a part of the leak signal is reflected by the contact holes 731 and 741, the leak signal is diffused. It Therefore, in this semiconductor device 3, the high frequency signal leaking from the wireless transmission block 30 is rarely reflected by the contact holes 731 and 741 and returned to the wireless transmission block 30 itself.

Therefore, in the semiconductor device 3, the isolation between the circuit blocks in the high frequency range is ensured and the radio transmission block 30 itself is not easily affected by the leakage signal. Although FIG. 5 shows the shield structures 73 and 74 formed in the insulating layer 20 between the surface 11 of the silicon substrate 10 and the intermediate wiring layer 50, the intermediate wiring layer 50 and the high frequency shielding layer 100 are shown. The shield structure formed between and has the same arrangement form. (Embodiment 4) A semiconductor device 4 according to Embodiment 4 will be described with reference to FIG. Although FIG. 6 shows only the area between the wireless transmission block 30 and the wireless reception block 40, the structure other than the shape and arrangement of the contact holes is the same as that of the semiconductor device 1.

As shown in FIG. 6, each of the contact holes 751 and 761 forming the seventh shield structure 75 and the eighth shield structure 76 has a substantially circular cross-sectional shape. The arrangement of the seventh shield structure 75 and the eighth shield structure 76, and the structure of the contact holes 751 and 761 are the same as those in the first to third embodiments.

The shield structure 75 having the above structure,
In the semiconductor device 4 including 76, the isolation between the circuit blocks in the high frequency range is ensured, and
The wireless transmission block 30 itself has the same advantages as those of the first to third embodiments in that it is unlikely to be affected by the leakage signal. Further, in the semiconductor device 4, since the surfaces of the contact holes 751 and 761 facing the wireless transmission block 30 are not flat, the semiconductor devices 4 are superior to the semiconductor devices 1 to 3 in the diffusion property of the leakage signal. (Fifth Embodiment) A semiconductor device 5 according to the fifth embodiment will be described with reference to FIG. In FIG. 7, for convenience, only the wireless transmission block 30, the wireless reception block 40, and the shield structures 77 and 78 formed therebetween are illustrated. The configuration other than the shield structure is similar to that of the semiconductor device 1 and the like.

As shown in FIG. 7, the wireless transmission block 30
Shield structures 77 and 78 surrounding the are arranged concentrically. Among them, the shield structure 78 arranged on the outer side is composed of a plurality of contact holes 781 and a plurality of contact holes 782 arranged concentrically.

Incidentally, these shield structures 77, 78
Each of the contact holes 771, 781, and 782 constituting the above has a rectangular cross-sectional shape, and one of the diagonal lines thereof is arranged so as to face substantially the center of the wireless transmission block 30. Is the same as. These contact holes 781 and 782 are provided inside the insulating layer 20 so that the wireless transmission block 30 and the wireless reception block 4 are provided.
Among the straight lines connecting 0 and 0, the straight line passing through the gap between the contact hole 771 and the contact hole 771 forming the shield structure 77 is blocked.

In the semiconductor device 5 as described above, since the leak signal in the high frequency range can be spread over the entire area around the wireless transmission block 30, the spread property of the leak signal is superior to that of the semiconductor device 3. Therefore, in the semiconductor device 5, the isolation between the circuit blocks in the high frequency range is ensured, and the wireless transmission block 30 itself is less susceptible to the interference due to the leakage signal. (Other matters) In the above semiconductor devices 1 to 5, the insulating layer 2 is used.
Although the high frequency shielding layer 100 of a metal thin film is provided on the surface of 0, the high frequency shielding layer 100 does not necessarily have to be a metal thin film, and a plurality of metal lines may be arranged in stripes or meshes. good. However, in this case, it is necessary to set the gap between the adjacent metal lines to less than 1/2 of the wavelength of the signal that may leak from the circuit block.

Further, the high frequency shielding layer 100 as described above.
Even in the case where the device is not formed, the mutual interference in the high frequency range between the circuit blocks in the device is reduced as compared with the conventional semiconductor device. In the above-mentioned semiconductor devices 1 to 5, the two shield structures are formed so as to surround one circuit block. However, even if the two shield structures are formed only between the circuit blocks, the circuit structure is improved as compared with the conventional semiconductor device. Mutual interference in the high frequency range between blocks is reduced.

Further, in the above-mentioned first to fifth embodiments, the semiconductor device in which two circuit blocks are formed has been described as an example, but the number of circuit blocks formed is not limited to this. . In the third embodiment, the contact holes 731 and 741 are arranged so that the side walls thereof form an angle of about 45 ° with respect to the row-arranging direction, but the corners of the cross section are located at the wireless transmission block 30 and the wireless reception block 40. The angle is not limited to this as long as it is oriented.

The cross-sectional shape of each contact hole is also
The invention is not limited to the one described in the above embodiment.
For example, the cross-sectional shape may be a pentagon or a hexagon.
The material used for forming the semiconductor device is also an example, and the material is not limited to this. For example,
SOI (Silicon on Insu) on a semiconductor substrate
The latter is advantageous because it ensures isolation in the high frequency range between the circuit blocks.

[0050]

As described above, according to the present invention, in a semiconductor device having a plurality of high frequency circuit blocks formed from the inside of a semiconductor substrate to an insulating layer laminated on the surface of the semiconductor substrate, a plurality of insulating layers are provided. Forming a plurality of contact holes in a row between at least two high-frequency circuit blocks selected from among the high-frequency circuit blocks, and forming a contact hole in the first shield structure. The second shield structure having a plurality of contact holes arranged in a row is formed so as to block a straight line connecting the two high-frequency circuit blocks between the contact holes and the contact holes.

In this semiconductor device, at least mutual interference in the high frequency region through the insulating layer between the high frequency circuit blocks in which the first shield structure and the second shield structure are formed is suppressed. Since this has a characteristic that a leak signal in a high frequency region propagates linearly, a leak signal in a high frequency region that is going to propagate between high frequency circuit blocks through an insulating layer is at least the first shield structure or This is because it is shielded by at least one contact hole belonging to any of the second shield structures, and it is possible to suppress the contact holes from propagating forward from the region in which they are arranged.

In the above semiconductor device, in addition to the first shield structure and the second shield structure, the semiconductor device is formed so as to cover the upper region of one of the high frequency circuit blocks in the insulating layer, and is connected to the ground. It is desirable that the high frequency shielding layer is formed. Specifically, it is desirable that the high frequency shielding layer is a metal thin film because of its ease of formation.

In this semiconductor device, mutual interference between the high frequency circuit block formed on the semiconductor substrate and the high frequency circuit block as well as the outside of the semiconductor device due to the leakage signal in the high frequency region is suppressed.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing a semiconductor device according to a first embodiment.

FIG. 2 is a plan view of the semiconductor device of FIG. 1 viewed from the top surface direction.

FIG. 3 is a detailed diagram showing between circuit blocks in FIG.

FIG. 4 is a cross-sectional view showing a semiconductor device according to a second embodiment.

FIG. 5 is a detailed view showing between circuit blocks of the semiconductor device according to the third embodiment.

FIG. 6 is a detailed view showing between circuit blocks of the semiconductor device according to the fourth embodiment.

FIG. 7 is a plan view of a semiconductor device according to a fifth embodiment.

[Explanation of symbols]

1, 2. Semiconductor device 10. Silicon substrate 20. Insulation layer 30. Wireless transmission block 40. Wireless reception block 50. Conductor layer 60. Trench structure 71. First shield structure 72. Second shield structure 80. Intermediate wiring layer 91. Third shield structure 92. Fourth shield structure 100. High frequency shielding layer

   ─────────────────────────────────────────────────── ─── Continued front page    F term (reference) 5F033 HH08 HH11 HH13 HH19 JJ08                       JJ11 JJ13 JJ19 KK01 KK08                       KK11 KK13 KK19 NN34 UU04                       VV03 XX23                 5F038 BH09 BH10 BH19 CD04 EZ15                       EZ20                 5F048 AA00 AA04 AB10 AC03 AC05                       BA14 BF02 BF07 BG14

Claims (12)

[Claims] 1. A semiconductor device comprising a plurality of high-frequency circuit blocks formed from the inside of a semiconductor substrate to an insulating layer laminated on the surface thereof, wherein the insulating layer includes a plurality of high-frequency circuit blocks. A first shield structure in which a plurality of contact holes are arranged in a row is formed between at least two high-frequency circuit blocks selected from the inside, and the contact hole and the contact hole of the first shield structure are formed. A semiconductor device, wherein a second shield structure having a plurality of contact holes arranged in a row is formed so as to block a straight line connecting the two high-frequency circuit blocks through the space. 2. The semiconductor device according to claim 1, wherein the first shield structure and the second shield structure are arranged in parallel. 3. The semiconductor device according to claim 2, wherein each of the contact holes forming the first shield structure and the second shield structure has a columnar shape having a rectangular cross section. 4. The semiconductor device according to claim 3, wherein a sidewall of each of the contact holes forms an angle with the direction of the row. 5. The semiconductor device according to claim 2, wherein each of the contact holes forming the first shield structure and the second shield structure has a columnar shape with a circular cross section. 6. The first shield structure and the second shield structure are arranged so as to surround one of the two high frequency circuit blocks. 2. The semiconductor device according to item 2. 7. The first shield structure and the second shield structure are arranged in a double ring shape around the one high-frequency circuit block, according to claim 6. Semiconductor device. 8. A high-frequency signal shielding layer, which is formed on the surface of the insulating layer so as to cover an upper region of one of the two high-frequency circuit blocks and is connected to the ground. The semiconductor device according to claim 1, wherein the semiconductor device is formed. 9. The semiconductor device according to claim 8, wherein the high frequency signal shielding layer is a metal thin film. 10. The first shield structure and the second shield structure.
9. The semiconductor device according to claim 8, wherein the shield structure and the ground are connected via the high-frequency signal shielding layer. 11. The high-frequency circuit block in which the high-frequency signal shielding layer is formed in an upper region includes the high-frequency shielding layer, the first shield structure, and the second layer immediately above.
9. The semiconductor device according to claim 8, wherein the semiconductor device is connected to the ground via at least one selected from among the shield structures. 12. The semiconductor substrate has Si, and at least one of the two high-frequency circuit blocks has a region made of SiGe. 12. The semiconductor device according to any one of 1 to 11.