JP2003213496A - Solution treatment device, and solution treatment method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a solution treatment device and a solution treatment method capable of ensuring the uniform irradiation of the light on a substrate. <P>SOLUTION: The solution treatment device having a light source comprises a substrate holding base to hold the substrate, and a frame body which is connected to the substrate to form a treatment solution tank with an upper part thereof opened and has an inner wall surface inclined to the vertical direction of the substrate surface. The frame body has the inclined inner wall surface, preventing the irradiation light from the light source to the substrate from being blocked by the inner wall surface, preventing a shadow from being formed on the substrate, preventing the irradiation light reflected by the inner wall surface from being incident on the substrate, and further preventing the uniformity of the irradiation light from being impaired. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid processing apparatus for performing liquid processing, and a liquid processing method, and more particularly to a liquid processing apparatus and liquid processing method for performing liquid processing while irradiating light.

[0002]

2. Description of the Related Art A substrate may be subjected to liquid treatment while being irradiated with light. For example, in the anodization treatment, the polycrystalline silicon layer is made porous by immersing the substrate on which the polycrystalline silicon layer is formed in a treatment liquid and applying electricity while being irradiated with light. At this time, the irradiation of light promotes the formation of holes in the polycrystalline silicon layer and thus the elution of silicon.

[0003]

In the case of performing the liquid treatment while irradiating light, it is preferable to ensure the uniformity of the liquid treatment. For this purpose, it is necessary to make the conditions the same in each part of the substrate, and it is also required that the irradiation amount of light on the substrate be uniform. In view of the above, the present invention is
An object of the present invention is to provide a liquid processing apparatus and a liquid processing method capable of ensuring the uniformity of light irradiation amount on a substrate.

[0004]

In order to achieve the above object, a liquid processing apparatus according to the present invention comprises a substrate holding table for holding a substrate and a processing liquid tank which is connected to the substrate and has an open top. A frame body that is formed and has an inner wall surface that is inclined with respect to the vertical direction of the substrate surface, a treatment liquid injection unit that injects the treatment liquid into the treatment liquid tank, and the treatment liquid in the treatment liquid tank. And a lid having a light source and detachably connected to the frame. Since the frame body has an inner wall surface that is inclined with respect to the vertical direction of the substrate surface, the light emitted from the light source toward the substrate is blocked by this inner wall surface and casts a shadow on the substrate, or is reflected by this inner wall surface. Irradiation light can be prevented from entering the substrate, and the uniformity of irradiation light can be prevented from being impaired.

The liquid processing apparatus may further include a uniformizing means for uniformizing the amount of light emitted from the light source to the substrate. By providing the uniformizing means for uniformizing the amount of light applied to the substrate, the uniformity of processing of the substrate is further improved. Here, the homogenizing means can be configured by a power supply means that makes the power supplied to the light source near the periphery of the substrate larger than the power supplied to the light source near the center of the substrate. Further, the homogenizing means can also be configured by using a combination of light sources having different outputs. When the light source is arranged so as to face the substrate, incident light tends to be weaker at the peripheral edge of the substrate than at the center of the substrate because of this arrangement. This is because the vicinity of the center of the substrate corresponds to the center of the entire light source and is in a position where the light emitted from the light source is easily received. The non-uniformity of the incident light amount due to the arrangement of the light sources can be alleviated by the distribution of the emitted light from the light source, and the uniformity of the incident light amount can be improved.

The processing liquid injecting means has a processing liquid injecting port opening on the inner wall surface of the frame body, and the processing liquid discharging means has a processing liquid injecting port opening on the inner wall surface of the frame body. Good. Since the processing liquid is injected and discharged through the processing liquid injection port that opens on the wall surface, the processing light injection pipe does not block the light emitted from the light source and contributes to improving the uniformity of the incident light. You can

The treatment liquid injecting means may have a treatment liquid injecting groove formed on the inner wall surface of the frame so as to extend from the treatment liquid injecting port toward the bottom surface of the treatment liquid tank.
Since the flow of the treatment liquid can be guided by the treatment liquid injection groove, it becomes easy to uniformly inject the treatment liquid into the treatment liquid tank. Furthermore, if this processing liquid injection groove has a branch,
By this branching, the processing liquid is divided, and uniform injection of the processing liquid becomes easier.

The processing liquid discharge means may have a movable processing liquid discharge pipe. When the processing solution is discharged, the discharge of the processing solution can be promoted by inserting the tip of the processing solution discharge pipe into the processing solution. Further, during the irradiation of light, the treatment liquid discharge pipe is retracted to a position where the light is not blocked, so that the uniformity of the light incident on the substrate is not hindered.

The liquid processing apparatus may further include an inclining means for inclining the processing liquid tank. By inclining the processing liquid tank, discharge of the processing liquid is promoted. The liquid processing apparatus may further include a first electrode for electrically connecting to the substrate, and the lid body may have a second electrode. Electrochemical liquid processing can be performed on the substrate.

(2) The liquid processing method according to the present invention is characterized by comprising a processing step of performing liquid processing while irradiating the substrate installed in the processing tank with uniformed light. Since the uniformized light is applied to the substrate, the treatment on the substrate is uniformized.

Here, the processing step includes a mounting step of mounting the substrate on the substrate holding table, and a processing liquid which constitutes a processing liquid tank by connecting a frame to the substrate mounted in the mounting step. A bath forming step, a liquid processing step of supplying a processing liquid into the processing liquid tank formed in the processing liquid tank forming step to perform liquid processing on the substrate, and a processing liquid supplied in the liquid processing step A treatment liquid discharging step of discharging the treatment liquid from the treatment liquid tank. Liquid processing can be performed with the substrate placed on the substrate holder.

The liquid treatment step may include a step of supplying the treatment liquid into the treatment liquid tank by using a treatment liquid injection groove formed on an inner wall surface of the treatment liquid tank. By using the processing liquid injection groove, it is possible to uniformly supply the processing liquid into the processing liquid tank. The processing liquid discharging step may include a step of discharging the processing liquid using a movable processing liquid discharging pipe. By using the movable processing liquid discharge pipe, the residual amount of the processing liquid in the processing liquid tank can be reduced. The treatment liquid discharging step may include a step of discharging the treatment liquid in a state where the treatment liquid tank is tilted from the vertical. The processing liquid can be quickly discharged from the processing liquid tank, and the residual amount of the processing liquid can be reduced.

[0013]

BEST MODE FOR CARRYING OUT THE INVENTION (First Embodiment) A liquid processing apparatus 10 according to one embodiment of the present invention will be described in detail below with reference to the drawings. FIG. 1 is a side view showing the configuration of a liquid processing apparatus 10 according to the first embodiment of the present invention. A processing liquid tank bottom portion (substrate holding base) 30 is installed on the pedestal 20, and a processing liquid tank side portion (frame body) 40 is installed above the processing liquid tank bottom portion 30. As will be described later, the processing liquid tank side portion 40 and the processing liquid tank bottom portion 30 can configure the processing liquid tank 50. The pedestal 20 comprises a lower pedestal 21 and an upper pedestal 22, both of which are provided with a rotary shaft 23.
And a support rod 25 connected to the cylinder 24 are connected to each other. Both of them rotate relative to each other with the rotation shaft 23 as the center of rotation. Then, by operating the cylinder 24 and expanding and contracting the support rod 25, it is possible to change the inclination θ of the upper pedestal 22 with respect to the lower pedestal 21 (the installation surface of the liquid processing apparatus 10) and thus the processing liquid tank 50. That is, the cylinder 24 functions as an inclining means for inclining the processing liquid tank 50. A hydraulic cylinder can be used as the cylinder 24.

The side portion 40 of the processing liquid tank is held by a column 26 protruding from the upper pedestal 22 through the bottom portion 30 of the processing liquid tank. The column 26 is expanded and contracted in a direction perpendicular to the upper surface of the upper pedestal 22 by a cylinder 27 installed in the upper pedestal 22. The expansion / contraction of the column 26 allows the side portion 40 of the processing liquid tank to be connected to or separated from the bottom portion 30 of the processing liquid tank. The processing liquid tank side portion 40 is connected to the processing liquid tank bottom portion 30 to form a processing liquid tank (chemical liquid tank portion) 50 for accumulating the processing liquid (chemical liquid) L. In addition, as the cylinder 27,
A hydraulic cylinder can be used.

The liquid processing apparatus 10 can perform a plurality of liquid processes such as anodizing and anodizing on a substrate. A reducing agent such as an aqueous solution of hydrofluoric acid (hydrofluoric acid) and a surfactant such as a mixed solution of ethyl alcohol and water are used as the treatment liquid L1 for anodizing treatment, and an oxidizer such as an oxidizing agent is used as the treatment liquid L2 for anodizing treatment. An aqueous solution of sulfuric acid can be used. These treatment liquids L, especially hydrofluoric acid, are extremely corrosive. Therefore, the treatment liquid tank bottom portion 30, the treatment liquid tank side portion 40, the treatment liquid tank lid portion (lid body) 60, and the surface of the sealing ring 44, which will be described later, which is brought into contact with the treatment liquid L or its mist, is the treatment liquid L. It is composed of corrosion-resistant resin that is not corroded by. Specific examples of the corrosion resistant resin include fluororesins such as perfluoroalkoxy fluororesin (PFA) and polytetrafluoroethylene (PTFE).

FIG. 2 is a partial cross-sectional view showing the details of the processing liquid tank bottom portion 30. FIG. 3 is a partial cross-sectional view showing details of a state in which the processing liquid tank lid portion 60 is installed on the processing liquid tank side portion 40. FIG. 4 is a top view showing a state where the processing liquid tank side portion 40 is viewed from above. FIG. 5 is a front view showing a part of the inner surface of the processing liquid tank side portion 40. FIG. 6 is a top view showing the arrangement of a halogen lamp 62, which will be described later, inside the treatment liquid tank lid 60. FIG. 7 is a top view showing an arrangement relationship of the halogen lamp 62 with respect to the processing liquid tank side portion 40. 2 and 3, the pillars 26 and the cylinders 27 are omitted for clarity. In the following drawings, similarly, the description of the support column 26 and the cylinder 27 will be omitted.

(Detailed Structure of Processing Solution Tank Bottom 30) As shown in FIG. 2, the processing solution tank bottom 30 holds a glass substrate G which is an object to be processed. That is, the processing liquid bath bottom portion 30 functions as a substrate holding portion that holds the substrate. The glass substrate G is held on the processing liquid tank bottom portion 30, and its upper surface contacts the processing liquid L through an opening portion (a lower opening portion 43 described later) on the bottom surface of the processing liquid tank side portion 40. When the glass substrate G on which the polycrystalline silicon layer is formed is used as an object to be processed, an electric conductor layer is sandwiched between the glass substrate G and the polycrystalline silicon layer for energization, if necessary. ing. Further, the electrode (substrate-side electrode Eg) electrically connected to the conductor layer is exposed on the surface of the target object. As the object to be processed, in addition to the glass substrate G on which the polycrystalline silicon layer is formed, a semiconductor substrate such as silicon or GaAs on which the polycrystalline silicon layer is formed can be used. Further, a semiconductor substrate on which a polycrystalline silicon layer is not formed (for example, a single crystal silicon substrate) can also be the object to be processed.

A substrate elevating mechanism 31 for lifting the glass substrate G and lowering the lifted glass substrate is installed on the bottom portion 30 of the processing liquid tank. This substrate lifting mechanism 3
1 is composed of a substrate supporting portion 32 that directly supports the glass substrate G and a moving mechanism 33 that vertically moves the substrate supporting portion 32.

The substrate elevating mechanism 31 is, for example, a glass substrate G.
It will be installed in four corners and five places in the center. The substrate supporting portion 32 arranged corresponding to the corner of the glass substrate G or the center other than the sides has a substantially flat plate shape corresponding to the shape of the bottom surface of the glass substrate G. On the other hand, the glass substrate G
Substrate support portion 32 arranged corresponding to the side or corner of the
Has a shape corresponding to the shape of the side or corner of the glass substrate G. As the moving mechanism 33, for example, an air cylinder driven by compressed air can be used. An electrically driven electric motor may be used as the moving mechanism 33.

At the bottom 30 of the processing liquid tank, a suction mechanism 34 as a fixing means for fixing the glass substrate G is installed. The suction mechanism 34 is a hole formed in the processing liquid tank bottom portion 30, and by vacuum suction from this hole, the glass substrate G can be sucked and fixed to the processing liquid tank bottom portion 30. Treatment liquid bottom 30
Further includes temperature adjusting means (not shown) for adjusting the temperature of the glass substrate G. The temperature adjusting means can be composed of a heat exchanger using a constant temperature liquid, a Peltier element, or the like.

(Detailed Structure of Treatment Liquid Tank Side 40) The treatment liquid tank side portion 40 includes four slopes 41 (41a to 41d) which form a part of the inner surface of the treatment liquid tank 50, and upper portions which are opened vertically. It has an opening 42 and a lower opening 43. This slope 41
Are inclined from four directions from the upper opening 42 of the processing liquid tank side portion 40 to the lower opening 43. That is, the sloping surface 41 forms a four-sided pyramid space having an upper bottom and a lower bottom of the upper opening 42 and the lower opening 43, respectively. In this way, the space formed by the slope 41 expands upward so that the light emitted from the halogen lamp 62, which will be described later, toward the glass substrate G is not blocked by the slope 41 (occurrence of a shadow). (Prevention) and to prevent the light reflected from the inclined surface 41 from entering the glass substrate G (prevention of re-incident of reflected light). When a shadow is generated or reflected light is re-incident, it causes uneven distribution of the light incident on the glass substrate G. By thus preventing the generation of shadows and the re-incidence of reflected light, the distribution of light incident on the glass substrate G is made uniform.

On the bottom surface of the processing liquid tank side portion 40, there is provided a sealing ring 44 which is a substrate sealing means for preventing the processing liquid L from leaking between the processing liquid tank side portion 40 and the glass substrate G. ing. The sealing ring 44 is an O-ring having a circular or elliptical cross section, is provided along the inner circumference of the bottom surface of the processing liquid tank side portion 40 and the periphery of the glass substrate G, and protects the peripheral edge of the glass substrate G from the processing liquid. Protect. The sealing ring 44 is made of chemical resistant rubber or the like, and is pressed by the processing liquid tank bottom portion 30 (glass substrate G).

On the bottom surface of the processing liquid tank side portion 40, a conducting electrode 45 for electrically conducting the glass substrate G is formed slightly closer to the outer periphery than the sealing ring 44. The conduction electrode 45 is arranged corresponding to the substrate side electrode Eg of the glass substrate G. Here, since the sealing ring 44 is installed closer to the inside of the treatment liquid tank 50 than the conduction electrode 45, the conduction electrode 45 is protected from the treatment liquid L. The conduction electrode 45 is a so-called cantilever which is fixed to the processing liquid tank side portion 40 on the outer peripheral side of the processing liquid tank 50 and is movable on the inner peripheral side of the processing liquid tank 50. The conduction electrode 45 is made of a material having both elasticity and electrical conductivity, for example, a metal.

At the side 40 of the processing liquid tank, the processing liquid injection port 4 is provided.
6, processing liquid discharge port 47, mist capture port 48 (48a, 4
8b) is installed. The processing liquid injection port 46 is connected to a pipe penetrating the processing liquid tank side portion 40, and is connected to the processing liquid tank side portion 4.
This is an opening provided near the upper opening 42 on the zero slope 41a. Since the pipe for injecting and discharging the treatment liquid does not project into the side portion 40 of the treatment liquid tank, the light emitted from the halogen lamp 62 described later to the glass substrate G is not blocked. Therefore, the light radiated on the glass substrate G can be made uniform. The treatment liquid injection port 46 is connected to a tank (not shown) filled with an anodizing treatment solution L1, an anodizing treatment solution L2, and pure water W (ion exchanged water) for cleaning the inside of the treatment liquid tank 50. ing. The processing liquid injection port 46 can supply three types of liquids into the processing liquid tank 50 by switching these three tanks with valves.

The processing liquid injection port 46 is connected to a processing liquid injection groove 49 on the slope 41a. Groove for processing liquid injection 49
Is a groove 46 that is directly connected to the processing liquid inlet 46 and extends downward.
a, a groove 46b orthogonal to the groove 46a, and a plurality of grooves 46c (46c1 to 46c8) orthogonal to the groove 46b and extending downward. The grooves 46c1 to 46c8 are used as the processing liquid inlet 4
The width becomes wider as going from 6 to far. The liquid injected from the processing liquid injection port 46 into the processing liquid tank 50 passes through the processing liquid injection groove 49. Groove 46c1
The width of 46c8 becomes wider as the distance from the treatment liquid injection port 46 increases so that the liquid is uniformly supplied from each of the grooves 46c1 to 46c8. If the widths of the grooves 46c are the same, the groove 46c closer to the processing liquid injection port 46 can easily supply more liquid, and thus the liquid can be easily supplied by the distance from the processing liquid injection port 46. The difference in thickness is compensated by the width (ease of flow) of the groove 46c to ensure the uniformity of the supply amount.

The processing liquid discharge port 47 is connected to a pipe penetrating the processing liquid tank side portion 40, and the slope 41 of the processing liquid tank side portion 40.
It is an opening provided near the lower opening 43 on b and near the boundary with the slope 41d. A pump for sucking the liquid in the processing liquid tank 50 is connected to the pipe from the processing liquid discharge port 47, and the liquid in the processing liquid tank 50 can be discharged by the operation of the pump. Since the processing liquid discharge port 47 is provided near the lower opening 43 of the slope 41b, the remaining amount of the processing liquid when discharging the processing liquid in the processing liquid tank 50 is small.
Furthermore, when the processing liquid tank 50 is tilted, the processing liquid discharge port 4
The liquid gathers in the vicinity of 7, and the liquid is quickly discharged. In addition, the slope direction of the treatment liquid tank 50 is changed to change the slope 41
By lowering the vicinity of the boundary between b and the slope 41d, the liquid discharge can be further promoted.

The mist catch port 48 (48a, 48b) is
Provided near the upper surfaces of the slopes 46a and 46b of the processing liquid tank side portion 40, the mist (fog) of the processing liquid L is captured, and the mist of the processing liquid L is prevented from scattering outside the processing liquid tank 50. Is the opening. The pipe connected to the mist capturing port 48 is provided with a mist capturing filter capable of capturing the mist (liquid component) of the treatment liquid L (gas-liquid separation) and exhausting only the gas component.

(Detailed Structure of Processing Solution Tank Cover 60) The processing solution tank cover 60 includes a cathode electrode 61 and a halogen lamp 6.
2. A suction tube 63 is installed. The halogen lamp 62 (62a to 62h), which is a light source, is long in the uniaxial direction. The axes are arranged so as to be substantially parallel to each other. Each of the halogen lamps 62 is connected to a halogen lamp power source (not shown) serving as an output control means, and the halogen lamps 62d and 62e are located near the center of the glass substrate G.
A halogen lamp 62a located closer to the periphery of the glass substrate G (more precisely, closer to the exposed periphery of the glass substrate G),
62h is controlled to output more light. This is to ensure that the glass substrate G is uniformly irradiated with light. While the center of the glass substrate G is a position where it is easy to receive the light irradiation from any of the halogen lamps 62,
The vicinity of the periphery of the glass substrate G is a position where it is difficult to receive strong light irradiation from all the halogen lamps 62. For example,
In the vicinity of the boundary between the lower opening 43 and the slope 46a, the halogen lamp 62g and 62h are far from each other, and therefore the halogen lamp 62
Light reaching from g and 62h becomes weak. As described above, the unevenness of the irradiation light amount caused by the correspondence relationship between the arrangement of the glass substrate G and the halogen lamp 62 is compensated by the distribution of the light amount of the halogen lamp 62, and the uniformity of the irradiation light amount is improved. The uniformity of the irradiation light amount may be improved by changing the halogen lamp 62 itself (for example, using a halogen lamp having a different rated output) without using the power source for the halogen lamp. The halogen lamp 62 as a whole,
For example, it has an output of about 500 to 1000 W, and 450 to 5 on the upper surface of the glass substrate G held by the processing liquid bath bottom 30.
Irradiation with light in the wavelength range of about 00 nm. This irradiation of light promotes the formation of porous silicon when anodizing the polycrystalline silicon layer on the glass substrate G.

The cathode electrode 61 is a halogen lamp 62.
And a halogen lamp 62 between the processing liquid tank bottom 30 and
It has a light-transmitting property so as not to block the light from. The light-transmitting property here does not necessarily mean that the cathode electrode 61 itself is made of a light-transmitting material, but an opening is provided in the cathode electrode 61, or the cathode electrode 61 is made of a linear cathode material. It also means to do. At this time, platinum that does not transmit light can be used as the material of the cathode electrode 61.

The conduction electrode 45 and the cathode electrode 61 are connected to a power source (not shown). The anodizing treatment or anodizing treatment is performed by filling the treating liquid tank 50 with the treating liquid L and applying electricity to the polycrystalline silicon layer on the glass substrate G through the conducting electrode 45. The movable suction pipe 63 as a processing liquid discharge pipe is parallel to the upper and lower surfaces of the processing liquid tank 50, which is the bottom surface of the processing liquid tank 50, and the upper surface of the processing liquid tank bottom portion 30 (correctly, the surface to be processed of the glass substrate G). It is composed of a pipe that can be moved within a plane and is connected to an aspirator (treatment liquid suction device) not shown. The aspirator sucks the processing liquid L through the suction pipe 63 to discharge the processing liquid L, which cannot be completely discharged through the processing liquid discharge port 47, from the processing liquid tank 50.

(Details of Liquid Treatment Step) FIG. 8 shows a case where an anodizing treatment and anodizing treatment are continuously performed on the polycrystalline silicon layer formed on the glass substrate G using the liquid treatment apparatus 10. It is a flow figure showing a procedure. Also, from FIG.
9 is a partial cross-sectional view showing the state of the liquid processing apparatus 10 in each step shown in FIG. Hereinafter, this procedure will be described in detail with reference to FIGS. It should be noted that, as already described, the columns 26 and the cylinders 27 are omitted. (1) The liquid processing apparatus 10 is in a standby state for placing the glass substrate G on the processing liquid bath bottom 30 (step 10).
1 and FIG. 9). In this standby state, the processing liquid tank side portion 4
0 is raised by the column 26 and is separated from the processing liquid tank bottom 30. In addition, the substrate support unit 32 has a moving mechanism 33.
The glass substrate G is lifted up and waits for the glass substrate G to be placed.

(2) Glass substrate G on the bottom 30 of the processing liquid tank
Are placed (step 102 and FIG. 10). Specifically, the glass substrate G is placed on the substrate support 32.
This placement is performed by a substrate transfer mechanism (not shown),
The glass substrate G is placed so that the surface to be processed (polycrystalline silicon formation surface) is the top surface.

(3) The glass substrate G is held and fixed on the bottom portion 30 of the processing liquid tank (step 103 and FIG. 11). The fixation of the glass substrate G to the bottom portion 30 of the processing liquid tank is described in
It depends on the process. The substrate support portion 32 is lowered by the moving mechanism 33 so that the lower surface of the glass substrate G directly contacts the upper surface of the processing liquid bath bottom portion 30. The glass substrate G is vacuum-sucked by the suction mechanism 34 to fix the glass substrate G on the processing liquid bath bottom 30.

(4) The processing liquid tank side portion 40 is lowered by the support column 26 and connected to the processing liquid tank bottom portion 30 so that the sealing ring 44 is crushed by the glass substrate G. As a result, a seal is formed between the sealing ring 44 and the glass substrate G to prevent the processing liquid from leaking, and the conduction electrode 45 contacts the substrate-side electrode Eg (step 104 and FIG. 12).

(5) The processing solution tank lid 60 is lowered, and the anodizing solution (processing solution L1) is injected into the processing solution tank 50 through the processing solution injection port 46 and the processing solution discharge port 47. A chemical conversion process is performed (step 105 and FIG. 13). Due to the sealing function of the sealing ring 44, the processing liquid L1 does not leak between the processing liquid tank side portion 40 and the processing liquid tank bottom portion 30 (glass substrate G) when the processing liquid L1 is introduced.
The processing liquid L1 is controlled so that its liquid surface is located at a predetermined position with respect to the processing liquid tank 50. The position control of the liquid surface can be performed by, for example, measuring the liquid surface by an optical liquid surface sensor or controlling the amount of introduced liquid using a metering pump. The injection of the processing liquid L1 is performed from the processing liquid injection port 46 via the processing liquid injection groove 49. Since the treatment liquid injection groove 49 is branched, the treatment liquid L1 is uniformly injected into the treatment liquid tank 50. Further, the processing liquid injection groove 49c
The processing liquid L1 is injected more uniformly by increasing the width of the processing liquid L as the distance from the processing liquid injection port 46 increases.

After the injection of the treatment liquid L1 is completed, a voltage is applied between the conducting electrode 45 and the cathode electrode 61 to perform anodization treatment. This voltage may include a pulse component or an AC component. It suffices that a voltage is applied so that the conduction electrode 45 is positive and the cathode electrode 61 is negative as a time average.

As a result of this anodization treatment, a part of the polycrystalline silicon starts to dissolve in the treatment liquid L1 and becomes so-called porous silicon in which many fine cavities are formed. Along with this anodizing treatment, the polycrystalline silicon layer on the glass substrate G is irradiated with light from the halogen lamp 62. This light irradiation promotes the elution of silicon and assists the formation of porous silicon by forming holes in the polycrystalline silicon layer. When the polycrystalline silicon layer is p-type, since holes originally exist in the polycrystalline silicon layer, light irradiation is not always necessary.

As described above, the irradiation of light on the glass substrate G is made uniform by the following methods. The slope 41 in the processing liquid tank 50 is inclined so as to spread upward. It is possible to prevent the shadow and reflected light from the inner surface (slope 41) of the processing liquid tank 50 from entering the glass substrate G. The output of the halogen lamp 62 located on the periphery of the glass substrate G is larger than the output of the halogen lamp 62 located near the center of the glass substrate G. The peripheral portion of the glass substrate G tends to have a small light irradiation amount due to the arrangement of the halogen lamp 62. Halogen lamp 62 near this edge
By increasing the amount of light, it is possible to eliminate the unevenness of the irradiation amount due to the arrangement of the halogen lamp 62. The processing liquid is injected and discharged through the processing liquid inlet 46 and the processing liquid outlet 47. That is, the pipe for injecting and discharging the processing liquid is not arranged between the halogen lamp 62 and the glass substrate G, and the irradiation light from the halogen lamp 62 is not blocked.

(6) Treatment liquid L when the anodizing treatment is completed
1 is discharged from the processing liquid tank 50 (step 10).
6). The discharge of the processing liquid L1 is performed by the following procedures. The treatment liquid L1 is discharged from the treatment liquid discharge port 47 with the treatment liquid tank 50 standing upright (FIG. 14). When the processing liquid L1 is discharged to some extent, the cylinder 24
The processing liquid L1 is discharged while the processing liquid tank 50 is tilted to concentrate the processing liquid L1 at the processing liquid discharge port 47 (see FIG. 1).
5). As a result, the processing liquid L remaining on the glass substrate G
1 is reduced, the suction pipe 63 moves to a corner of the treatment liquid tank 50 (where the treatment liquid L1 is concentrated) and descends, so that the treatment liquid L1.
Aspirate. As a result, the amount of the processing liquid L1 remaining on the glass substrate G can be further reduced (FIG. 16). The switching among these can be automatically performed by using a liquid level sensor or the like to detect the position of the lowered liquid level and the remaining amount of the processing liquid L1. That is, the remaining amount of the processing liquid L1 is
When the respective values become equal to or less than the predetermined reference value, switching from to to is performed.

(7) The glass substrate G is washed and hydrophilized (step 107). Prior to cleaning the glass substrate G, the processing liquid tank 50 is returned to the upright state by the cylinder 24. Then, pure water W for diluting the processing liquid L1 is injected into the processing liquid tank 50 from the processing liquid injection port 46 (FIG. 17). The valve switches the injection of the processing liquid L1 and the pure water W through the processing liquid injection port 46. The processing liquid L1 diluted and increased with the pure water W is
It is discharged through the three-stage procedure as described in step S106. That is, the discharge is performed from the treatment liquid discharge port 47 when the treatment liquid tank 50 is upright, and the discharge is performed by the discharge suction pipe 63 from the treatment liquid discharge port 47 when the treatment liquid tank 50 is tilted. The figure showing these procedures is Step S.
Since it is not substantially different from FIGS. 14 to 16 described in 106, description thereof will be omitted. Treatment liquid L1 by injecting this pure water W
And the discharge of the diluted treatment liquid L1 are repeated several times as necessary. As a result of repeating this dilution and discharge, the treatment liquid L1 remaining on the glass substrate G is diluted to such an extent that it does not hinder the next step. In this way, the glass substrate G is cleaned by diluting and discharging the processing liquid L1. Steps S106 and S107
Since the residual amount of the treatment liquid L1 and the residual amount of the diluted treatment liquid L1 are reduced by each of the procedures 1 to 3, the number of times of this repetition is reduced and the cleaning process is promoted.

After the cleaning of the glass substrate G is completed, a surfactant is dropped on the anodized polycrystalline silicon layer of the glass substrate G. As a result, the surface of the polycrystalline silicon layer is wetted with the surfactant and becomes hydrophilic. This prevents the porous silicon produced as a result of anodization from drying,
This is to ensure the uniformity of the subsequent anodizing treatment. The dropping of the surfactant can be performed by the suction pipe 63.

(8) After that, an anodic oxidation treatment is performed (step 108 and FIG. 18). Prior to the anodizing treatment, the anodizing treatment solution (the treating liquid L2) is introduced into the treating liquid tank 50 from the treating liquid injection port 46 so as to have a predetermined liquid level. The injection of the processing liquid L2 is performed from the processing liquid injection port 46 via the processing liquid injection groove 49, and step S1 is performed.
As in the case of 05, the treatment liquid L2 is evenly injected due to the branching of the treatment liquid injection groove 49 and the distribution of the width of the treatment liquid injection groove 49c. After that, a voltage is applied between the conduction electrode 45 and the cathode electrode 61, and an anodization process is performed. It should be noted that this voltage may be time-averaged as already described in step S105 so that the conduction electrode 45 serves as an anode and the cathode electrode 61 serves as a cathode, and it is not always necessary to obtain a complete D.
It is not necessary to use only the C component. As a result of this anodizing treatment, an oxide layer is formed on the surface of the porous silicon formed by the anodizing treatment.

(9) Treatment liquid L when the anodizing treatment is completed
2 is discharged from the processing liquid tank 50 (step 10).
9). The processing liquid L2 is discharged through the three-step procedure as described in step S106. That is, the processing liquid tank 50
Is the discharge from the treatment liquid discharge port 47 in the upright state, and the discharge by the discharge suction pipe 63 from the treatment liquid discharge port 47 when the treatment liquid tank 50 is tilted. These steps ~
14 is not substantially different from FIGS. 14 to 16 described in step S106, and a description thereof will be omitted.

(10) The glass substrate G is washed and hydrophilized (step 110). Prior to cleaning the glass substrate G, the processing liquid tank 50 is returned to the upright state by the cylinder 24. Then, pure water W for diluting the processing liquid L2 is injected into the processing liquid tank 50 from the processing liquid inlet 46 (FIG. 17). The treatment liquid L2 diluted and increased with the pure water W is discharged through the same three stages as in step S107. That is, the discharge is performed from the treatment liquid discharge port 47 when the treatment liquid tank 50 is upright, and the discharge is performed by the discharge suction pipe 63 from the treatment liquid discharge port 47 when the treatment liquid tank 50 is tilted. Since these details are not essentially different from step S107, they are omitted.

The dilution of the treatment liquid L1 by the injection of the pure water W and the discharge of the diluted treatment liquid L1 are repeated several times as necessary. As a result of repeating this dilution and discharge,
The treatment liquid L1 remaining on the glass substrate G is diluted to such an extent that it does not hinder the next step. In this way, the glass substrate G is cleaned by diluting and discharging the processing liquid L1. Since the residual amount of the treatment liquid L1 and the residual amount of the diluted treatment liquid L1 are reduced by the procedures 1 to 3 in step S109 and step S110, respectively, the number of repetitions is reduced and the cleaning process is promoted. It In this cleaning process, the treatment liquid L1 is the treatment liquid L.
The difference from step S107 is that the number is changed to 2 and that the hydrophilic treatment is not performed.

(11) By raising the processing liquid bath side portion 40, the sealing ring 44 seals the glass substrate G and the electrical connection between the conduction electrode 45 and the substrate side electrode Eg is released (step S111). And FIG. 11). (12) The surface of the washed glass substrate G is dried (step S111). This drying can be done with an air knife,
This can be performed by blowing away the cleaning liquid remaining on the glass substrate G by spin drying or the like. After that, the adsorption of the glass substrate G to the processing liquid bath bottom 30 by the adsorption mechanism 34 is stopped. Further, the substrate supporting unit 32 is raised by the moving mechanism 33, and the glass substrate G is removed from the substrate supporting unit 32 by the substrate carrying mechanism (not shown).

(Other Embodiments) The embodiments of the present invention are not limited to the above-mentioned embodiments, but can be expanded, modified, expanded,
Modified embodiments are also included in the technical scope of the present invention. (1) For example, in the above embodiment, the halogen lamp 62 has a shape elongated in one axis direction, for example, a cylindrical shape (close to a line light source), but a spherical shape (close to a point light source).
A combination of light sources may be used. Also, the number can be determined appropriately. (2) In the above embodiment, the processing liquid tank 50 is tilted only when the processing liquid is discharged, but it may be tilted at all times after the processing liquid tank 50 starts processing. At this time, the processing liquid tank 50 can be tilted as long as the substrate is fixed (for example, step S1 in FIG. 8).
Between 03 and S111). The inclination angle can be close to vertical. An example of this is shown in FIG. A sealing member 65 is installed on the processing liquid tank lid portion 60a shown in FIG. 19 to prevent leakage of the processing liquid and the like from between the processing liquid tank side portion 40a. As a result, it is not necessary to install the mist capture port 48.

[0048]

As described above, according to the present invention, since the side portion of the processing liquid tank has the inner wall surface inclined with respect to the vertical direction, the light emitted from the light source to the substrate is blocked by the inner wall surface. Alternatively, it is possible to prevent the light reflected by the inner wall surface from entering the substrate and maintain the uniformity of the light entering the substrate.

[Brief description of drawings]

FIG. 1 is a partial cross-sectional view showing a liquid processing apparatus according to a first embodiment.

FIG. 2 is a partial cross-sectional view showing details of the configuration of the bottom portion of the processing liquid tank shown in FIG.

FIG. 3 is a partial cross-sectional view showing details of the configuration in which the treatment liquid tank lid portion shown in FIG. 1 is installed on the side portion of the treatment liquid tank.

FIG. 4 is a top view showing a state where the side portion of the processing liquid tank shown in FIG. 1 is viewed from above.

5 is a front view showing a part of the inner surface of the side portion of the processing liquid tank shown in FIG.

FIG. 6 is a top view showing the arrangement of halogen lamps in the processing liquid tank lid.

FIG. 7 is a top view showing an arrangement relationship of a halogen lamp with respect to a side portion of a processing liquid tank.

FIG. 8 is a flow chart showing an example of a procedure for continuously performing anodizing treatment and anodizing treatment using the liquid treatment apparatus according to the first embodiment.

FIG. 9 is a partial cross-sectional view showing the liquid processing apparatus according to the first embodiment in a standby state.

FIG. 10 is a partial cross-sectional view showing the liquid processing apparatus according to the first embodiment in which a glass substrate G is placed on the bottom of the processing liquid tank.

FIG. 11 is a partial cross-sectional view showing the liquid processing apparatus according to the first embodiment with a glass substrate G fixed on the bottom of the processing liquid tank.

FIG. 12 is a partial cross-sectional view showing the liquid processing apparatus according to the first embodiment in a state where the glass substrate G is sealed and electrically connected.

FIG. 13 is a partial cross-sectional view showing the liquid processing apparatus according to the first embodiment in a state where anodizing treatment is being performed.

FIG. 14 is a partial cross-sectional view showing the liquid processing apparatus according to the first embodiment in which the anodizing treatment liquid is discharged in an upright state.

FIG. 15 is a partial cross-sectional view showing the liquid treatment apparatus according to the first embodiment, in which the anodizing treatment liquid is discharged in an inclined state.

FIG. 16 is a partial cross-sectional view showing the liquid processing apparatus according to the first embodiment, in which the anodizing treatment liquid is discharged using a suction tube.

FIG. 17: First state of cleaning glass substrate
FIG. 3 is a partial cross-sectional view showing the liquid processing apparatus according to the embodiment.

FIG. 18 is a partial cross-sectional view showing the liquid processing apparatus according to the first embodiment in a state where an anodizing process is being performed.

FIG. 19 is a partial cross-sectional view showing a modified example of the liquid processing apparatus.

[Explanation of symbols]

10 ... Liquid treatment device 20 ... Pedestal 21 ... Lower pedestal 22 ... Upper pedestal 23 ... rotary shaft 24 ... Cylinder 25 ... Support rod 26 ... Prop 27 ... Cylinder 30 ... Processing liquid bottom 31 ... Substrate lifting mechanism 32 ... Substrate support 33 ... Moving mechanism 34 ... Adsorption mechanism 40, 40a ... Side of processing liquid tank 41 (41a to 41d) ... Slope 42 ... Upper opening 43 ... Lower opening 44 ... Sealing ring 45 ... Electrode for conduction 46 ... Treatment liquid inlet 47 ... Treatment liquid outlet 48 ... Mist capture port 49 ... Groove for injecting treatment liquid 50 ... Treatment liquid tank 60, 60a ... Treatment liquid tank lid 61 ... Cathode electrode 62 (62a to 62h) ... Halogen lamp 63 ... Suction tube 65 ... Sealing member

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Mitsuru Ushijima             TBS release, 5-3-6 Akasaka, Minato-ku, Tokyo             Sending Center Tokyo Electron Limited

Claims (16)

[Claims] 1. A frame body having a substrate holding table for holding a substrate, a processing liquid tank connected to the substrate and having an open upper portion, and having an inner wall surface inclined with respect to a vertical direction of the substrate surface. A processing liquid injecting means for injecting the processing liquid into the processing liquid tank, a processing liquid discharging means for discharging the processing liquid from the processing liquid tank, and a light source, which is detachable from the frame body. A liquid processing apparatus comprising: a lid to be connected. 2. The liquid processing apparatus according to claim 1, further comprising a uniformizing unit that uniformizes the amount of light emitted from the light source to the substrate. 3. The uniformizing means includes power supply means for increasing the power supplied to the light source corresponding to the vicinity of the peripheral edge of the substrate to be larger than the power supplied to the light source corresponding to the vicinity of the center of the substrate. The liquid processing apparatus according to claim 2. 4. The liquid processing apparatus according to claim 1, wherein the processing liquid injecting means has a processing liquid injecting port opening on an inner wall surface of the frame. 5. The processing liquid injection means has a processing liquid injection groove formed on the inner wall surface of the frame so as to extend from the processing liquid injection port toward the bottom surface of the processing liquid tank. The liquid processing apparatus according to claim 4. 6. The liquid processing apparatus according to claim 5, wherein the processing liquid injection groove has a branch. 7. The liquid processing apparatus according to claim 1, wherein the processing liquid discharge means has a processing liquid discharge port opening on an inner wall surface of the frame. 8. The liquid processing apparatus according to claim 1, wherein the processing liquid discharge means has a movable processing liquid discharge pipe. 9. The liquid processing apparatus according to claim 1, further comprising an inclining means for inclining the processing liquid tank. 10. The liquid processing apparatus further comprises a first electrode for electrically connecting to the substrate, and the lid body has a second electrode. The liquid processing apparatus described. 11. A liquid processing method comprising a processing step of performing liquid processing while irradiating uniformized light on a substrate installed in a processing tank. 12. The processing step, wherein the processing step comprises a mounting step of mounting the substrate on a substrate holding table, and a processing liquid which constitutes a processing liquid tank by connecting a frame to the substrate mounted in the mounting step. A bath forming step, a liquid processing step of supplying a processing liquid into the processing liquid tank formed in the processing liquid tank forming step to perform liquid processing on the substrate, and the processing liquid supplied in the liquid processing step 12. The liquid processing method according to claim 11, further comprising a processing liquid discharging step of discharging the processing liquid from the inside of the processing liquid tank. 13. The liquid treatment step includes a step of supplying the treatment liquid into the treatment liquid tank by using a treatment liquid injection groove formed on an inner wall surface of the frame body. The liquid processing method according to claim 12. 14. The liquid processing method according to claim 12, wherein the processing liquid discharging step includes a step of discharging the processing liquid using a movable processing liquid discharging pipe. 15. The liquid processing method according to claim 12, wherein the processing liquid discharging step includes a step of discharging the processing liquid in a state where the processing liquid tank is tilted from a vertical direction. 16. The liquid processing method according to claim 12, wherein the liquid processing step includes a step of applying a voltage to the substrate.