200304963 玖、發明說明： 發明所屬之技術領域 本發明係與液體處理之液體處理裝置及液體處理方法有 關者，尤纟與在實施光之照射時並進行液體處理的液體處 理裝置及液體處理方法有關。 先前技術 可在對基板實施光之照射之際，並同時進行液體處理。 、譬如，在陽極化成處理上，把形成❹晶②層之基板浸泡 於處理液體中，並在光之照射狀態下，進行通電，以此一 方式把多晶珍層進行多孔化。此時，光之照射可在多晶石夕 層内形成正孔，進而促進矽之溶出。 發明内容 在實施光之照射並同時進行液體處理的情況下，以能 欣體處理之均一性為佳。因此，在基板之各處所上 使各條件均H對基板之光的㈣量也必彡貞 性才行。 土於乂上理由’本發明的目的為提供一種液體處理 及液體處理方法，其係能使對基板之光的照射 置 性者。 T g〜 •為了達成上逑目的’與本發明有關之液體處理裝置係具 土板、隹持P ’其係用於維持基板者；處理液體槽， 與前述基板連接，且上邱s門、“丄+ /、係 、、、奇且上4主開放狀者；框體，其具有内辟 面、、而Θ内壁面係對該基板面之垂直方向呈傾斜狀者；: 理/夜體注人手段’其係用於把前述處理液體注人前述處 82965 200304963 液體槽内I ;處理液體排出手段，其係用於把前述處理液 體從前述處理液體槽内排出者；及蓋體，其具有光源，並 與前述框體呈可分離之連接者。 由於框體具有内壁面，而該内壁面係對該基板面之垂直方 向呈傾斜狀；因此可防止來自光源往基板方向之照射光受 該内壁面所遮蔽而在基板上形成陰影，且可防止受該内壁 面反射的照射光射入基板；以及防止照射光之均一性受到 破壞。 (1) 液^體處理裝置亦可進一步具備均一化手段，其係用於把 來自前述光源而照射於前述基板之光量進行均一化者。由 於具備把照射於基板之光量進行均一化的均一化手段，因 此可進一步提升基板處理之均一性。 在此，前述均一化手段係由電力供應手段所構成者；而該 電力供應手段供應給與前述基板之料近旁對應之光源的 電力，係比供應給與前述基板之中央近旁對應之光源的電 力為大。此外，均一化手段亦可與本身具不同輸出之光源 進行組合使用。 如把光源配置於基板之對向位置，則由於該配置關係，而 使入射光在基板之周緣比基板之中央容易變得較弱。其原 因在於，基板之中央係與光源整體之中央對應，且位於容 易接受來自光源之照射光的位置上之故。 調整光源之出射光的分佈，可降低因前述光源配置所導致 的入射光量之不均一性，進而提升入射光量的均一性。 (2) 處理液體注入手段亦可具有處理液體注入口，其係開口 82965 200304963 於前述框體之内壁面上者；而處理液體排出手段亦可具有 處理液體排出口，其係開口於前述框體之内壁面上者。 由於以開口於壁面上之處理液體注入口等來進行處理液 體之注入、㈣，因此來自光源之出射光不會受處理液體 >王入用配管所遮蔽，故有助於於提升入射光之均一性。 (3)前述處理液體注入手段亦可具有處理液體注入用溝槽 ;其係形成於前述框體之内壁冑±，且係由前述處理液體 注入口朝向前述處理液體槽之底部者。 利用處理液體注入用溝槽可謗導處理液體的流向，故可容 易使處理液體均一地注入處理液體槽内。 此外，如該處理液體注入用溝槽呈分支狀，則可利用該分 支來Μ處理液體，來使處理液較容易均-地注入。 ⑷前述處理液體排出手段亦可具有可移動之處理液體排 在排出處理液體時，把處理液體 /從辨出f足先端插入處理液 體中，如此可促進處理液體之 艾排出。又，在光之照射時， 如使處理液體排出管避開刭 | 頂不會錢光的位置，則不會影 響對基板之入射光的均一性。 (5) 液體處理裝置亦可進一牛 +、疮 步具備傾斜手段，其係用於使前 述處理液體槽傾斜者。 使處理液體槽傾斜可促進處理液體的排出。 (6) 前述液體處理裝置進—步1 、士、甘J 1 y A '、備弟1電極’其係用於與前 …，者，而可述蓋體可具有第2電極。 如此則可對基板進行電化學之液體處理。 B ·與本發明有關之液體步 、 万法的特徵係在於具備處理 82965 200304963 工序#係用於對基板實施均_化之光照射並同時進行液 體處理者；而該基板係設置於處理槽㈣。 由於基板被以均一化夕伞、在^ J 化 < 先進行照射，因此對基板之處理也 呈均一化。 (1)在此，處理工庠可且古· 、 斤了/、有·載置工序，其係用於把基板載 置於基板維持台上者；處理液體槽構成工序，其係用於把 框體連接於前述基板，來構成處理液體槽者；而前述基板 係在前述載置工序上被進行載置者；液體處理工序，其係 用於把處理液體供應到前述處理液體槽内，並把前述基板 進行液體處理者，而前述處理液體槽係以前述處理液體槽 構成工序所構成者；及處理液體排出工序，其係用於把前 述處理液體從前述處理液體槽内排出者，而前述處理液體 t内係在則述液體處理工序上被提供處理液體者。 土板係被載置於基板維持台的狀態下，被實施液體處理。 (2) 以上液體處理工序亦可具有處理液體供應工序，其係使 、處里液主入用溝槽來把前述處理液體供應到前述處理 液體槽内者；而該處理液體注入用溝槽係於前述處理液體 槽之内壁面上形成者。 使用處理液體用溝槽，則可對處理液體槽内供應均一之處 理液體。 (3) 、前述處理液體排出工序亦可具有一種工序，其係以可移 動之處理液體排出管來將前述處理液體排出者。 使用可移動之處理液體排出管’則可降低處理液體槽内之 處理液體之殘留量。 82965 200304963 (4)則述處理液體排出工序亦可具有一種工序，其係在使前 述處理液體槽由鉛直變為傾斜的狀態下，將前述處理液體 排出者。 如此可使處理液體從處理液槽迅速排出，且降低處理 之殘留量。 實施方式 (第1實施形態） 以下，參考圖式對與本發明之第丨實施型態有關之液體 理裝置10作詳細說明。 圖1係與本弩明之第1實施型態有關之液體處理裝置10的 結構之側面圖。 在台座2 0上設有液體處理槽底部（基板維持台）3 〇，而處理 液體槽底部30之上方則設有液體處理槽側部（框體）4〇。如後 所述，處理液體槽側部4〇和處理液體槽底部3〇構成處理液 體槽50。 彳 台座20包含下部台座21及上部台座22。該兩者係以支撐棒 25相互連接，而支撐棒25係連接於旋轉軸23及圓筒24上者 。兩者係以旋轉軸23為旋轉中心，進行相對旋轉。而如使 圓筒24動作，使支撐棒25伸縮，則可使相對於下部台座21 (液體處理裝置10的設置面）之上部台座22，乃至於處理液體 槽50之傾斜角θ產生變化。亦即，圓筒24可發揮使處理液體 槽5 0傾斜手段的功能。又’圓筒2 4可使用油壓圓筒。 處理液體槽側部40係以支柱26來支撐，其係由上部台座22 男穿處理液體槽底邵3 0而呈凸出狀。支柱2 6係因圓筒2 7而 在上部台座22之上面朝垂直方向伸縮；而圓筒27係設置於 82965 -10 - 200304963 上邵台座22之内者。由於支柱26之伸縮，因此處理液體槽 側部40可和處理液體槽底部3〇進行接觸或分離。由於處理 液體槽側邵40和處理液體槽底部3 〇的接觸，因而形成用於 儲存處理液體（藥液）L之處理液體槽（藥液槽部）5〇。又，圓 筒27可使用油壓圓筒。 液體處理裝置1 〇可對基板進行多個液體處理，譬如陽極化 成處理及陽極氧化處理。 在陽極化成處理用之處理液體L丨方面，還原劑譬如可用 氟化氫之水溶液（沸酸），而界面活化劑譬如可用乙醇和水之 混合溶液；在碭極氧化處理用之處理液體匕2方面，氧化劑 譬如可用硫酸水溶液。 在前述各處理液體L方面，特別是沸酸具有極大腐蝕性。 因此，處理液體槽底邵3〇、處理液體槽側部4〇、處理液體 槽盍邵（蓋體）6〇及後述之密封用環44之處理液體1或其霧氣 所接觸之表面，係採用不受處理液體[侵蝕之耐蝕性樹脂。 具把而吕，耐蝕性樹脂有氟聚合物樹脂（pFA)、聚四氟乙晞 (PTFE)等之氟:素樹脂。 圖2係處理液體槽底邵3〇之詳細結構的部份剖面圖。圖3 係把處理液體槽蓋部6〇設置於處理液體槽側部時的詳細 結構之部份剖面圖。圖4係由上方觀察處理液體槽侧部糾之 面圖。圖5係顯不處理液體槽側部4〇之一部份内面的正面 圖圖6係處理液體槽蓋部60内之後述鹵素燈62配置之上面 圖。圖7係相對於處理液體槽側部4()之自素㈣之配置關係 82965 -11- 200304963 又，在圖2、3中，4 了避免干擾，而未顯示支柱26及圓筒 27。基於同樣的理由’在其後的圖中，亦主％ 27省略。 (處理液體槽底部3〇之詳細結構） 如圖2所示，在處理液體槽底部3〇維持著被處理體玻璃基 M H處理液Μ底部3G具有用於維持基板之基板維 持邵功能。玻璃基板G被維持於處理液體槽底部3〇上，透過 處理液體槽側部40底面之開口部（後述之下方開口部43)，使 其上面與處理液體L接觸。 把形成有多 '结晶矽層之玻璃基板G當作被處理體使用時 ，依照實際需要，而在玻璃基板G和多結晶矽層之間夾著用 於通電之電性之導體層。x ’料體層I電性連接之電極 (基板側電極EG)則露出於被處理體的表面。 在被處理體方面，除了形成有多結晶矽層之玻璃基板G之 外，亦可使用形成有多結晶矽層之矽、GaAs等之半導體基 板。再者，未形成多結晶矽層之半導體基板（譬如單結晶矽 基板）也可作為:被處理體使用。 在處理液體槽底邵3 0上設有基板升降機構3丨；其係用於使 玻璃基板G上升，或放下上升後之玻璃基板之用者。該基板 升降機構3 1係包含：基板支撐部32，其係用於直接支撐玻 璃基板G者；及移動機構33，其係用於使基板支撐部32上下 移動者。 基板升降機構3 1譬如可設置於玻璃基板G的4個角及中央 ，共5個地方。在與玻璃基板G的角或邊以外的中央對應而 82965 -12- 200304963 配置的基板支撐部32方面，其形狀係與玻璃基板G之底面形 狀對應而呈略平板形；相對的，在與玻璃基板G的角或邊對 應而配置的基板支撐邵3 2方面，其形狀係與玻璃基板g之邊 或角的形狀對應。 在移動機構3 3方面，譬如可使用以壓縮空氣驅動的空氣圓 筒。移動機構3 3如使用以電驅動之電動馬達亦無不可。 在處理液體槽底部30設有吸附機構34,其係相當於用於固 疋玻璃基板G之固定手段者。吸附機構34係於處理液體槽底 邓30所形成的孔，利用該孔進行真空吸附，而把玻璃基板〇 吸附於處理液體槽底部3 〇並使之固定。 處理液體槽底邵30具備溫度調節手段，其係用於調節玻璃 基板G足溫度者（未在圖中顯示）。該溫度調節手段係由熱交 換咨或佩爾蒂埃（Peltier)元件等所構成者；而該熱交換器係 使用恆溫之液體者。 (處理液體槽側部40之詳細結構） 處理液體槽側部40具有4個斜面41(41A〜4m)，其係構成 處理液體槽50之内面之一部份者；及上方開口部42、下方 開口 „"3 ’其係分別開口於處理液體 面川系從處理液體槽側㈣之上方開口部42向^開= 2由4個万向呈傾斜狀。亦#，由於斜面μ而形成*角錐 ::更間，而其係相當於上方開口部42及 之 各自的上底、下底者。 了 面41所形成的空間係朝上方擴張，其原因在於:為 使先不雙到斜面41的遮蔽（防止陰影的產生），而該光係由 82965 -13- 200304963 後述鹵素燈62向玻璃基板g照射者；且防止被斜面41所反射 的光射入玻璃基板G(防止反射光之再入射）。如產生陰影或 反射光之再入射，則會成光分佈不均一的要因；而該光係 才曰入射到玻璃基板G的光。如前所述，由於防止陰影的產生 及反射光之再入射，因此可使入射到玻璃基板G的光變得均 —^ 〇 在處理液體槽側部40之底面設有密封用環44 ;其係相當於 用於防止處理液體L從處理液體槽側部4〇及玻璃基板G之間 洩漏之基板封膠手段。密封用環44為剖面呈圓形或橢圓形 之〇型環，其保沿著體處理槽側部4〇之底面的内周及玻璃基 板G之周邊設置，可保護玻璃基板G之周緣不受處理液體l 的影響。 該密封用環44係由耐藥性之橡膠所形成，且係被處理液體 槽底部30(玻璃基板G)所按壓。 在處理液體槽側部40之底面形成有導通用電極45 ;其係形 成於比密封用環44略靠外周之位置，200304963 (ii) Description of the invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to a liquid processing device and a liquid processing method for liquid processing, and particularly relates to a liquid processing device and a liquid processing method that perform liquid processing when the light is irradiated. . In the prior art, the substrate is irradiated with light and simultaneously processed with liquid. For example, in the anodization process, a polycrystalline layer is made porous by immersing the substrate forming the ❹ crystal ② layer in the processing liquid and applying electricity in the state of light irradiation. At this time, the irradiation of light can form a positive hole in the polycrystalline stone layer, thereby promoting the dissolution of silicon. SUMMARY OF THE INVENTION In the case where the liquid treatment is performed while the irradiation of light is performed, the uniformity of the treatment can be favored. Therefore, it is necessary to make all conditions H on the substrate to the amount of light on the substrate. Reasons on the earth ’The object of the present invention is to provide a liquid treatment method and a liquid treatment method, which are capable of making a substrate to be irradiated with light. T g ~ • In order to achieve the above-mentioned purpose, the liquid processing device related to the present invention is provided with a soil plate and a support P ', which is used to maintain a substrate; a processing liquid tank is connected to the aforementioned substrate, and the upper Qiu gate, "丄 + ,,,,,,, and odd 4 main open-shaped ones; a frame body having an inward surface, and the Θ inner wall surface is inclined to the substrate surface in a vertical direction; "Injecting means" is used to inject the aforementioned processing liquid into the aforementioned place 82965 200304963 I in the liquid tank; the processing liquid discharge means is used to eject the aforementioned processing liquid from the aforementioned processing liquid tank; and the cover, which Those who have a light source and are detachably connected to the aforementioned frame. Since the frame has an inner wall surface, and the inner wall surface is inclined to the substrate surface in a vertical direction, the light from the light source toward the substrate can be prevented from being received. The inner wall surface is shielded to form a shadow on the substrate, and it is possible to prevent the irradiation light reflected by the inner wall surface from entering the substrate; and to prevent the uniformity of the irradiation light from being damaged. (1) The liquid treatment device may further be provided with uniformity. Turn hands It is used to uniformize the amount of light irradiated onto the substrate from the light source. Since it has a means for equalizing the amount of light irradiated onto the substrate, the uniformity of substrate processing can be further improved. Here, The aforementioned equalizing means is constituted by a power supply means; and the power supplied to the light source corresponding to the vicinity of the substrate by the power supply means is greater than the power supplied to the light source corresponding to the center of the substrate. In addition, the homogenization method can also be used in combination with light sources with different outputs. If the light source is arranged at the opposite position of the substrate, due to this arrangement, the incident light on the periphery of the substrate is easier to become than the center of the substrate. Weak. The reason is that the center of the substrate corresponds to the entire center of the light source and is located at a position where it is easy to receive the irradiated light from the light source. Adjusting the distribution of the emitted light from the light source can reduce the effects caused by the aforementioned light source configuration The heterogeneity of the amount of incident light, which in turn improves the uniformity of the amount of incident light. (2) Processing liquid injection The section may also have a treatment liquid injection port, which is an opening 82965 200304963 on the inner wall surface of the aforementioned frame; and the treatment liquid discharge means may also have a treatment liquid discharge port, which is open on the inner wall surface of the aforementioned frame. Since the treatment liquid is injected and pierced by a treatment liquid injection port or the like that is opened on the wall surface, the light emitted from the light source is not blocked by the treatment liquid > wang piping, so it is helpful to improve the incident light Uniformity. (3) The processing liquid injection means may also have a processing liquid injection groove; it is formed on the inner wall of the frame, and is from the processing liquid injection port toward the bottom of the processing liquid tank. The use of the treatment liquid injection groove can guide the flow of the treatment liquid, so that the treatment liquid can be easily and uniformly injected into the treatment liquid tank. In addition, if the treatment liquid injection groove is branched, the branch can be used for Process liquid to make it easier to inject the process liquid evenly. ⑷ The aforementioned treatment liquid discharge means may also have a movable treatment liquid discharge. When the treatment liquid is discharged, insert the treatment liquid / from the f-tip end into the treatment liquid, so as to promote the discharge of the treatment liquid. In addition, if the processing liquid discharge pipe is kept away from the position where no light is emitted during the irradiation of light, the uniformity of the incident light to the substrate will not be affected. (5) The liquid processing device can also be further equipped with a tilting mechanism for the sores, which is used to tilt the aforementioned processing liquid tank. Inclining the treatment liquid tank can promote the discharge of the treatment liquid. (6) The aforementioned liquid processing device—step 1, Shi, Gan J 1 y A ′, Beidi 1 electrode ’are used for the front, and the cover body may have a second electrode. In this way, the substrate can be subjected to electrochemical liquid treatment. B · The liquid step and method related to the present invention are characterized by having a process 82965 200304963. The process # is used for uniformly irradiating light to a substrate and performing liquid processing at the same time; and the substrate is provided in a processing tank. . Since the substrate is irradiated with a uniform umbrella, the substrate is irradiated first, so the processing of the substrate is also uniform. (1) Here, the processing steps may be used to place the substrate on the substrate holding stage, and the processing step is used to place the substrate on the substrate holding stage. The frame is connected to the substrate to constitute a processing liquid tank; the substrate is mounted on the mounting step; the liquid processing step is used to supply a processing liquid into the processing liquid tank, and The substrate is subjected to liquid treatment, and the processing liquid tank is constituted by the processing liquid tank formation step; and the processing liquid discharge step is used to discharge the processing liquid from the processing liquid tank, and the The processing liquid t is provided with the processing liquid in the liquid processing step. The soil plate system is placed on a substrate holding table and is subjected to liquid treatment. (2) The above liquid processing step may also include a processing liquid supply step, which is a method for supplying the processing liquid to the processing liquid tank by using the main liquid inlet groove; and the processing liquid injection groove system It is formed on the inner wall surface of the processing liquid tank. By using the processing liquid groove, a uniform processing liquid can be supplied to the processing liquid tank. (3) The processing liquid discharge step may include a step for discharging the processing liquid by a movable processing liquid discharge pipe. The use of a movable processing liquid discharge pipe 'can reduce the residual amount of the processing liquid in the processing liquid tank. 82965 200304963 (4) The processing liquid discharge step may include a process for discharging the processing liquid in a state where the processing liquid tank is changed from vertical to inclined. This allows the processing liquid to be quickly discharged from the processing liquid tank and reduces the residual amount of processing. Embodiment (First Embodiment) Hereinafter, a liquid processing apparatus 10 related to a first embodiment of the present invention will be described in detail with reference to the drawings. Fig. 1 is a side view showing the structure of a liquid processing apparatus 10 related to the first embodiment of the present invention. A liquid processing tank bottom (substrate holding table) 30 is provided on the pedestal 20, and a liquid processing tank side (frame) 40 is provided above the processing liquid tank bottom 30. As will be described later, the processing liquid tank side portion 40 and the processing liquid tank bottom portion 30 constitute a processing liquid tank 50.彳 The pedestal 20 includes a lower pedestal 21 and an upper pedestal 22. The two are connected to each other by a support rod 25, and the support rod 25 is connected to the rotation shaft 23 and the cylinder 24. Both are relatively rotated with the rotation shaft 23 as a rotation center. On the other hand, if the cylinder 24 is operated and the support rod 25 is extended and contracted, the inclination angle θ of the upper stage 22 relative to the lower stage 21 (the installation surface of the liquid processing apparatus 10) and even the processing liquid tank 50 can be changed. That is, the cylinder 24 can function as a means for tilting the processing liquid tank 50. As the 'cylinder 24', a hydraulic cylinder can be used. The treatment liquid tank side portion 40 is supported by a pillar 26, which is projected by the upper pedestal 22 through the bottom of the treatment liquid tank 30. The pillars 2 6 are vertically extended on the upper pedestal 22 due to the cylinder 27, and the cylinder 27 is installed inside the upper pedestal 22 of 82965 -10-200304963. Due to the expansion and contraction of the stay 26, the processing liquid tank side portion 40 can be brought into contact with or separated from the bottom 30 of the processing liquid tank. The processing liquid tank side 40 and the bottom of the processing liquid tank 30 are in contact with each other, thereby forming a processing liquid tank (medicine liquid tank portion) 50 for storing the processing liquid (chemical liquid) L. The cylinder 27 may be a hydraulic cylinder. The liquid processing apparatus 10 can perform a plurality of liquid treatments on the substrate, such as anodization and anodization. In the treatment liquid L 丨 for anodization, the reducing agent can be an aqueous solution of hydrogen fluoride (boiling acid), and the interfacial activating agent can be a mixed solution of ethanol and water. As the oxidizing agent, for example, an aqueous sulfuric acid solution can be used. With respect to each of the aforementioned treatment liquids L, especially the boiling acid is extremely corrosive. Therefore, the bottom surface of the processing liquid tank 30, the processing liquid tank side portion 40, the processing liquid tank bottom (cover body) 60, and the sealing liquid 44 of the sealing ring 44 described later or the surface contacted by the mist are used. Corrosion-resistant resin not affected by liquid [erosion. The corrosion-resistant resins include fluoropolymer resins (pFA), polytetrafluoroethylene (PTFE), and other fluorine: prime resins. Fig. 2 is a partial sectional view of the detailed structure of the bottom 30 of the processing liquid tank. Fig. 3 is a partial cross-sectional view showing a detailed structure when the processing liquid tank cover portion 60 is provided on the side of the processing liquid tank. Fig. 4 is a plan view of the side of the treatment liquid tank as viewed from above. Fig. 5 is a front view showing a part of the inner surface of the side portion 40 of the untreated liquid tank. Fig. 6 is a top view of the arrangement of the halogen lamp 62 described later in the lid portion 60 of the processed liquid tank. Fig. 7 shows the arrangement relationship of the self-priming element with respect to the side 4 () of the processing liquid tank 82965 -11- 200304963. In Figs. 2 and 3, 4 is used to avoid interference, but the pillar 26 and the cylinder 27 are not shown. For the same reason, in the subsequent figures, the main component 27 is also omitted. (Detailed Structure of the Bottom 30 of the Processing Liquid Tank) As shown in FIG. 2, the bottom 30 of the processing liquid tank 30 maintains the glass substrate M H and the bottom 3G of the processing liquid M has a substrate holding function for maintaining the substrate. The glass substrate G is held on the bottom 30 of the processing liquid tank, and passes through an opening (the lower opening 43 described later) on the bottom surface of the processing liquid tank side portion 40, and the upper surface thereof contacts the processing liquid L. When the glass substrate G having the polycrystalline silicon layer formed thereon is used as the object to be processed, an electrically conductive layer for conducting electricity is interposed between the glass substrate G and the polycrystalline silicon layer according to actual needs. The electrode (substrate-side electrode EG) electrically connected to the x 'material layer I is exposed on the surface of the object to be processed. As for the object to be processed, in addition to the glass substrate G on which the polycrystalline silicon layer is formed, a semiconductor substrate such as silicon or GaAs on which the polycrystalline silicon layer is formed can also be used. In addition, a semiconductor substrate (such as a single-crystal silicon substrate) without a polycrystalline silicon layer can also be used as an object to be processed. A substrate lifting mechanism 3 丨 is provided on the bottom 30 of the processing liquid tank; it is used to raise the glass substrate G, or to lower the glass substrate after rising. The substrate lifting mechanism 31 includes a substrate supporting portion 32 for directly supporting the glass substrate G, and a moving mechanism 33 for moving the substrate supporting portion 32 up and down. The substrate elevating mechanism 31 can be installed at four corners and the center of the glass substrate G, for example, at a total of five places. In terms of the substrate support portion 32 corresponding to the center other than the corner or side of the glass substrate G, 82965 -12- 200304963 is arranged, the shape is slightly flat, corresponding to the shape of the bottom surface of the glass substrate G; The substrate support Shao 32 is arranged in correspondence with the corners or sides of the substrate G, and its shape corresponds to the shape of the sides or corners of the glass substrate g. As the moving mechanism 33, for example, an air cylinder driven by compressed air can be used. The moving mechanism 33 is also indispensable if an electric motor driven by electricity is used. An adsorption mechanism 34 is provided at the bottom 30 of the processing liquid tank, which is equivalent to a fixing means for fixing the glass substrate G. The adsorption mechanism 34 is a hole formed in the bottom of the processing liquid tank Deng 30, and vacuum suction is used to adsorb the glass substrate 0 to the bottom 30 of the processing liquid tank and fix it. The bottom 30 of the processing liquid tank is provided with a temperature adjustment means for adjusting the temperature of the glass substrate G (not shown in the figure). The temperature adjustment means is composed of a heat exchanger or a Peltier element, and the heat exchanger is a liquid with a constant temperature. (Detailed structure of the processing liquid tank side portion 40) The processing liquid tank side portion 40 has four inclined surfaces 41 (41A to 4m), which are a part of the inner surface of the processing liquid tank 50; and the upper opening portion 42 and the lower portion Opening „" 3 'It is opened on the processing liquid surface, respectively. The system is open from the opening 42 above the processing liquid tank side 向 = 2 is inclined by 4 gimbals. Also #, due to the inclined surface μ * Pyramid :: It is equivalent to the upper opening 42 and its respective upper and lower bottoms. The space formed by the surface 41 expands upwards because it does not double to the inclined surface 41 first. (To prevent the generation of shadows), and this light is irradiated to the glass substrate g by the halogen lamp 62 described later by 82965 -13- 200304963; and the light reflected by the inclined surface 41 is prevented from entering the glass substrate G (to prevent the reflected light from being reproduced) Incidence). If shadows or reflected light are re-incident, it will cause a non-uniform light distribution; and this light is the light incident on the glass substrate G. As mentioned earlier, because of the prevention of shadows and reflected light Re-incidence, so that the light incident on the glass substrate G can be changed Both are provided with a sealing ring 44 on the bottom surface of the processing liquid tank side portion 40; this is equivalent to a substrate sealing means for preventing the processing liquid L from leaking between the processing liquid tank side portion 40 and the glass substrate G The sealing ring 44 is an O-ring having a circular or oval cross section, and is arranged along the inner periphery of the bottom surface of the body processing tank side portion 40 and the periphery of the glass substrate G, and can protect the peripheral edge of the glass substrate G It is affected by the processing liquid 1. The sealing ring 44 is formed of a resistant rubber and is pressed by the processing liquid tank bottom 30 (glass substrate G). A guide is formed on the bottom surface of the processing liquid tank side portion 40. The universal electrode 45 is formed slightly outside the periphery of the sealing ring 44.
，且係用於與玻璃基板G, And is used with glass substrate G
於比導通用電極45略靠處理液槽5〇之内部的位置，因此導 通用電極45可受保護不受處理液體乙的影響。 ，因此導Since the guide electrode 45 is located slightly inside the processing liquid tank 50, the guide electrode 45 can be protected from the influence of the treatment liquid B. , Therefore leading
譬如金屬-所構成者。 82965 -14- 200304963 處理液體槽側部40設有處理液體注入口 46、處理液體排出 口 47及霧氣捕獲口 48(48A、48B)。 處理液體注入口 46係與貫通處理液體槽側部40之配管連 接，且係設置於靠上方開口部42的開口部；而上方開口部 42係位於處理液體槽側部40之斜面41A上者。 由於在處理液體槽側部40内並無配管呈凸出狀，故不會產 生光被遮蔽的現象；而該配管係用於處理液體之注入、排 出者；該光係從後述之鹵素燈62向玻璃基板G照射者。因此 ，照射玻璃基板G的光可獲得均一化。 處理液體注入口 46與多種槽連接；該多種槽係分別裝滿未 在圖中顯示之陽極化成處理用溶液L1、陽極氧化處理用溶 液L2、及處理液體槽50内洗淨用純水W(離子交換水）者。處 理液體注入口 46利用閥來切換該三種槽，可對處理液體槽 5 0内供應該三種液體。 處理液體注入口 46與斜面41A上之處理液體注入用溝槽 49連接。處理液體注入用溝槽49包含溝槽46A，其係與處理 液體注入口 46直接連接，且往下方延伸者；溝槽46B，其係 與溝槽46八垂直交叉者；及多條溝槽46(：(46(^1〜46€8)，其係 與溝槽46B垂直交叉，且往下方延伸者。溝槽46C1〜46C8的 寬度係隨著離處理液體注入口 46的由近到遠而跟著變寬。 從處理液體注入口 46被注入處理液體槽50的液體係經由 處理液體注入用溝槽49。溝槽46C1〜46C8的寬度係隨著遠離 處理液體注入口 46而跟著變寬，其目的在於，使溝槽 46C1〜46C8獲得均一的液體供應。如溝槽46C之寬度都一樣 82965 -15- 200304963 ’則靠近處理液體注入口 46者較容易獲得液體供應；因此 ，以溝槽46C之寬度（流動的容易度）來補償因離處理液體注 入口 46之遠近而造成的液體供應難易度，如此確保了供應 量均一性。 處理液體排出口 47係與貫通處理液體槽側部4〇之配管連 接，且係設置於靠下方開口部43，及與斜面41D之交界近旁 的開口部；而下方開口部43係位於處理液體槽側部4〇之斜 面41B上者。從處理液體排出口 47到配管係連接有用於抽吸 處理液體槽50内之液體的幫浦；利用幫浦的動作可排出處 理液體槽50内的液體。 由於處理液體排出口 47係設置於靠斜面41B之下方開口 部43，因此在進行排出處理液體槽5〇内之液體時，處理液 體之殘留量很少。此外，當使處理液體槽5〇傾斜時，液體 集中於處理液體排出口 47附近，使液體迅速排出。又，改 變使處理液體槽50之傾斜方向，使斜面41B與斜面41D之交 界附近變低，可更進一步加速液體的排出。 霧氣捕獲口 48(48A、48B)係設置於處理液體槽側部4〇之 斜面46A、46B之上面附近的橫長型開口部；其係用於捕獲 處理液體L之霧氣（mist)，防止處理液體[之霧氣飛散到處理 液體槽50之外者。與霧氣捕獲口 48連接之配管設有霧氣捕 獲用濾網；其係用於捕獲（氣液分離）處理液體L之霧氣（液體 成份），而可只把氣體成份排出者。 (處理液體槽蓋部60之詳細結構） 處理液體槽蓋部60設有陰極61、鹵素燈62及抽吸管63。 82965 -16- 200304963 相當於光源的鹵素燈62(62A〜62H)係朝1軸方向較長。而 且，軸係相互呈平行狀配置。各鹵素燈62係分別與相當於 輸出控制手段之齒素燈用電源（未在圖中顯示）連接；其在對 光之輸出控制上係使··於玻璃基板（3之周緣近旁（正確而言 ，為露出之玻璃基板G的周緣近旁）之鹵素燈62八、62H比位 於玻璃基板G之中央近旁之鹵素燈62D、62E具有更多光的輸 出。 其目的在於使玻璃基板G得到光的均一化照射。玻璃基板 G之中央係位於容易接受任何鹵素燈62照射的位置；而玻璃 基板G之周緣近旁則處於難以接受全部自素燈62強烈照射 勺置s如，在下方開口邵43及斜面46A之交界近旁之處 :由：離齒素燈62G、62H較遠，因此來自南素_、62Η 之光變弱。如前所述，利用_素燈62之光量分佈來針對照 :光量的不均-進行補償，冑高照射光量的均一性；而該 ”射光里的不均一係因玻璃基板G與鹵素燈Μ之配置的對 應關係所造成者。 又如不利用鹵素燈用電源來控制，亦可採取讓鹵素燈62 自身有所差異(·譬如，使用定格輸出不同之自素燈)，來提高 照射光量的均一性。 白如，鹵素燈62整體具有5〇〇〜1〇〇〇w程度的輸出，以 450〜500 nm程度之波長範圍的光對玻璃基板〇之上面進行 照射；而玻璃基板G係被維持於處理液體槽底部3〇上者。此 光的，、、、射可促進多孔_的形成，而多孔碎係在對玻璃基板G 4夕結日曰⑦層實施陽極化成處理時所形成者。 82965 -17- 200304963 陰極61係位於鹵素燈62和處理液體槽底部3〇之間；其具有 透光性，不會遮蔽來自鹵素燈62的光。 而此處所謂透光性，並不限定陰極6丨必須由具透光性之材 料所構成；而是在陰極61上設置開口部，或以線狀材料來 構成陰極61之意。在該情況下，陰極61之材料可使用無透 光性之白金。 導通用電極45和陰極61係與未在圖中顯示之電源連接。在 處理液體槽5 0中加滿處理液體l，透過導通用電極4 5，對玻 璃基板G之多結晶矽層通電，則開始進行陽極化成處理或陽 極氧化處理。- 相當於可移動式處理液體排出管的抽吸管63係由管所構 成；而該管係對液體處理槽底部30(即相當於處理液體槽5〇 之底面）為可升降，且在與液體處理槽底部3〇之上面（正確而 a，為玻璃基板G之被處理面）平行的面内為可移動者。又 ’抽吸官63係與未在圖中顯示之處理液體抽吸裝置 (aspirator)連接。處理液體抽吸裝置係利用抽吸管63來抽吸 處理液體L,因此，可使在處理液體排出口 47無法完全排出 的處理液體L從處理液體槽50排出。 (液體處理工序之詳細内容） 圖8為使用液體處理裝置10對形成於玻璃基板〇上之多結 晶矽層連續實施陽極化成處理、陽極氧化處理時之順序的 机秸圖。又，圖9到圖19係在圖8所示之各工序上液體處理 裝置ίο之狀態的部份剖面圖。以下，參考圖9〜18針對該順 序作說明。再者，如前所述，支柱26及圓筒27並未在圖中 82965 -18- 200304963 顯示。 (1) 液體處理裝置10處於待機狀態；該狀態係用於把玻璃 基板G載置於處理液體槽底邵3〇之用（步驟及圖9)。 在該狀怨下’處理液體槽侧部4〇被支柱26所提高，而與處 理液體槽底邵30分離。此外，基板支撐部32被移動機構33 所提咼’而處於將被載置於玻璃基板G之狀態。 (2) 玻璃基板G被載置於處理液體槽底部3〇上（步騾1〇2及 圖 10)。 具體而吕，玻璃基板G被載置於基板支撐部32上。該載置Such as metal-constituted. 82965 -14- 200304963 The treatment liquid tank side portion 40 is provided with a treatment liquid injection port 46, a treatment liquid discharge port 47, and a mist capture port 48 (48A, 48B). The processing liquid injection port 46 is connected to a pipe penetrating the processing liquid tank side portion 40 and is provided at the opening portion of the upper opening portion 42; and the upper opening portion 42 is located on the inclined surface 41A of the processing liquid tank side portion 40. Since no piping is convex in the side 40 of the processing liquid tank, the light is not blocked. The piping is used for processing liquid injection and discharge. The light is from a halogen lamp 62 described later. A person irradiating the glass substrate G. Therefore, the light irradiated to the glass substrate G can be made uniform. The treatment liquid injection port 46 is connected to various tanks; the various tanks are respectively filled with an anodizing solution L1, not shown in the figure, and an anodizing solution L2, and pure water W for cleaning in the treatment liquid tank 50 ( Ion exchange water). The processing liquid injection port 46 uses a valve to switch the three tanks, and the three liquids can be supplied to the processing liquid tank 50. The processing liquid injection port 46 is connected to a processing liquid injection groove 49 on the inclined surface 41A. The processing liquid injection groove 49 includes a groove 46A, which is directly connected to the processing liquid injection port 46 and extends downward; the groove 46B, which is perpendicular to the groove 46, and a plurality of grooves 46 (: (46 (^ 1 ~ 46 € 8), which is perpendicular to the groove 46B, and extends downward. The width of the grooves 46C1 to 46C8 varies from near to far from the processing liquid injection port 46. The liquid system injected into the processing liquid tank 50 from the processing liquid injection port 46 passes through the processing liquid injection groove 49. The width of the grooves 46C1 to 46C8 becomes wider as it moves away from the processing liquid injection port 46. The purpose is to make the grooves 46C1 to 46C8 obtain a uniform liquid supply. For example, if the width of the grooves 46C is the same 82986 -15- 200304963 ', it is easier to obtain a liquid supply for those who are close to the liquid injection port 46; The width (easiness of flow) compensates for the difficulty of liquid supply due to the distance from the processing liquid injection port 46, thus ensuring uniformity of the supply amount. The processing liquid discharge port 47 is connected to the side of the processing liquid tank 40. Piping connection The lower opening 43 is located on the inclined surface 41B on the side 40 of the processing liquid tank. The lower opening 43 is located near the boundary with the inclined surface 41D. From the processing liquid discharge port 47 to the piping system A pump for sucking the liquid in the processing liquid tank 50 is connected, and the liquid in the processing liquid tank 50 can be discharged by the action of the pump. Since the processing liquid discharge port 47 is provided at the opening 43 below the inclined surface 41B, When the liquid in the processing liquid tank 50 is discharged, the remaining amount of the processing liquid is small. In addition, when the processing liquid tank 50 is tilted, the liquid is concentrated near the processing liquid discharge port 47 and the liquid is quickly discharged. Changing the inclination direction of the treatment liquid tank 50 makes the vicinity of the boundary between the inclined surface 41B and the inclined surface 41D lower, which can further accelerate the discharge of the liquid. The mist capture port 48 (48A, 48B) is provided at the side of the treatment liquid tank 40. The horizontally long openings near the upper surfaces of the inclined surfaces 46A and 46B are used to capture the mist of the processing liquid L and prevent the processing liquid [the mist from being scattered outside the processing liquid tank 50. The piping connected to the mist capture port 48 is provided with a mist capture filter; it is used to capture (gas-liquid separation) the mist (liquid component) of the processing liquid L, and can only discharge the gas component. (Processing liquid tank cover Detailed structure of the part 60) The processing liquid tank cover part 60 is provided with a cathode 61, a halogen lamp 62, and a suction pipe 63. 82965 -16- 200304963 The halogen lamp 62 (62A ~ 62H) equivalent to the light source is longer in the direction of one axis The shafts are arranged in parallel to each other. Each halogen lamp 62 is connected to a power source (not shown) for the gear lamp that is equivalent to the output control means; it is used to control the output of light ... Halogen lamps 62 and 62H on the glass substrate (near the periphery of 3 (to be precise, the periphery of the exposed glass substrate G)) have more light output than the halogen lamps 62D and 62E located near the center of the glass substrate G. . The purpose is to make the glass substrate G uniformly irradiated with light. The center of the glass substrate G is located where it is easy to receive any halogen lamp 62. The periphery of the glass substrate G is located near the periphery of the glass substrate G, which is difficult to receive all the strong light from the prime lamp 62. For example, at the junction of Shao 43 and 46A on the lower side Near: From: The gears 62G, 62H are far away, so the light from Nansu_, 62Η becomes weaker. As described above, the light quantity distribution of the _ prime lamp 62 is used to compensate for the unevenness of the light quantity, so as to increase the uniformity of the light quantity; and the unevenness in the "light" is due to the glass substrate G and the halogen lamp M Caused by the corresponding relationship of the configuration. If the halogen lamp is not controlled by the power supply, it is also possible to make the halogen lamp 62 itself different (for example, using a self-priming lamp with a different stop output) to increase the amount of irradiation light. For example, white light, the halogen lamp 62 as a whole has an output of about 5000 ~ 1000w, and irradiates the upper surface of the glass substrate 0 with light in a wavelength range of about 450 ~ 500 nm; and the glass substrate G is It is maintained above the bottom of the processing liquid tank 30. This light, radiation, radiation can promote the formation of porous pores, and the porous shards are formed when anodizing treatment is performed on the glass substrate G on the end of the day. 82965 -17- 200304963 The cathode 61 is located between the halogen lamp 62 and the bottom 30 of the processing liquid tank; it is light-transmissive and does not block the light from the halogen lamp 62. The so-called light-transmitting property here is not limited. The cathode 6 丨 must be made of transparent It is intended that the cathode 61 is provided with an opening or made of a linear material to form the cathode 61. In this case, the material of the cathode 61 can be platinum without light transmission. The conductive electrode 45 and the cathode The 61 series is connected to a power source not shown in the figure. Fill the processing liquid tank 50 with the processing liquid 1 and pass through the common electrode 45 to energize the polycrystalline silicon layer of the glass substrate G, and then start anodizing treatment or Anodizing treatment.- The suction pipe 63, which is equivalent to the movable processing liquid discharge pipe, is composed of a pipe; and the pipe system is capable of lifting and lowering the bottom 30 of the liquid processing tank (that is, the bottom surface of the processing liquid tank 50). And is movable in a plane parallel to the bottom of the liquid processing tank 30 (right and a, the processed surface of the glass substrate G). Also, the 'suction officer 63 is a process not shown in the figure. The liquid suction device (aspirator) is connected. The processing liquid suction device uses the suction pipe 63 to suck the processing liquid L, so that the processing liquid L that cannot be completely discharged at the processing liquid discharge port 47 can be discharged from the processing liquid tank 50 . (Liquid Department (Details of the process) FIG. 8 is a sequence diagram of a sequence in which an anodizing process and an anodizing process are performed continuously on a polycrystalline silicon layer formed on a glass substrate 0 using a liquid processing device 10. FIG. 9 to FIG. 19 A partial cross-sectional view of the state of the liquid processing device ο in each step shown in FIG. 8. Hereinafter, this order will be described with reference to FIGS. 9 to 18. In addition, as described above, the pillar 26 and the cylinder 27 are not It is shown in the figure 82965 -18- 200304963. (1) The liquid processing device 10 is in a standby state; this state is used for placing the glass substrate G on the bottom of the processing liquid tank 30 (steps and FIG. 9). In this state, the side portion 40 of the processing liquid tank is raised by the pillar 26 and separated from the bottom 30 of the processing liquid tank. In addition, the substrate supporting portion 32 is lifted by the moving mechanism 33, and is placed on the glass substrate G. (2) The glass substrate G is placed on the bottom 30 of the processing liquid tank (steps 102 and 10). Specifically, the glass substrate G is placed on the substrate support portion 32. The placement
係以未在圖中顯示之基板搬送機構來進行；其把玻璃基板G 之被處理面（多結晶矽之形成面）載置於上面。 (3)把玻璃基板g維持、固定於處理液體槽底部3〇上（步驟 103及圖 11)。 把玻璃基板G固定於處理液體槽底部3〇的動作係以下列 兩個順序來進行： a_利用移動機構33使基板支撐部32下降，讓玻璃基板σ <下面與處理液體槽底部3〇之上面直接接觸。 b·利用吸附機構34對玻璃基板G進行真空吸附，使玻璃 基板G固定於處理液體槽底部3〇上。 /4)利用支柱26使處理液體槽側部4〇下降，使之與處理液 槽底部30連接，如此則可用玻璃基板〇來壓緊密封用環44 其化成的結果為··形成封膠，且使導通用電極45和基板 側電極⑽接觸；而該封膠係用於防止密封用環料和玻璃基 G之間的處理液體洩漏者（步驟1〇4及圖12)。 82965 -19- 200304963 (5) 處理液體槽蓋部60下降，陽極化成用之溶液（處理液 體L1)經由處理液體注入口 46、處理液體排出口 47注入處理 液體槽50内，開始進行陽極化成處理（步騾ι〇5及圖ι3)。 由於密封用環44之封膠功能，因此當導入處理液體L1時 ’在處理液體槽側部40和處理液體槽底部30(玻璃基板G)之 間不會有處理液體L1漏出。處理液體l 1之液面被控制在對 處理液體槽50之所定位置上。在該液面之位置控制方法上 ’可採取利用光學方式之液面感測的液面測定，或使用定 ϊ幫浦之導入液量控制。 該處理液體L1之注入，係從處理液體注入口 46經由處理 液體注入用溝槽49來進行。因處理液體注入用溝槽49呈分 支狀’因此處理液體L1可均一地注入處理液體槽5〇内。再 者’使處理液體注入用溝槽49C之寬度離處理液體注入口 46 越遠則變得越寬，故可使處理液體L丨更均一地注入。 在處理液體L1之注入結束後，在導通用電極45和陰極6 i 之間施加電壓’來進行陽極化成處理。在該電壓中如包含 脈衝成份或AC成份亦無不可。就時間平均值而言，所施加 的電壓可使導通用電極45成為正值，而陰極61成為負值即 可。 進行該行陽極化成處理的結果，使多結晶矽層的一部份溶 出衣處理液體L1，而形成多個微細的孔穴，即所謂多孔石夕 。隨同陽極化成處理，利用^素燈62對玻璃基板G上之多結 晶矽層進行光的照射。該光的照射係使多結晶矽層内形成 正孔，因此可促進矽之溶出並輔助多孔矽的形成。再者， 82965 -20- 200304963 如多結晶矽層為P型的情形’則多結晶矽層内原本就存在著 正孔，因此不一定要實施光的照射。 如前所述，對玻璃基板G實施光的照射可利用以下a.〜c· 的手法而達到均一化。 a.處理液體槽50内之斜面41往上方呈傾斜狀擴大。 使因處理液體槽50内面（斜面41)所造成的陰影或反射光 入射到玻璃基板G上。 b·使位於玻璃基板G之周緣之齒素燈62之輸出比位於玻 璃基板G之中央附近之鹵素燈62具有更大輸出。 由於鹵素燈62之配置關係，因此玻璃基板G之周緣之光的 照射量容易變得較弱。針對靠近該周緣之鹵素燈62增加光 夏’就可消除因鹵素燈62之配置關係所導致的照射量的不 均'一 〇 c·利用處理液體注入口 46、處理液體排出口 47來進行處 理液體之注入、排出。 亦即’用於處理液體之注入、排出的配管並不配置於鹵素 燈62和玻璃基板G之間，因此不會遮蔽來自鹵素燈62的照射 光。 (6)在陽極化成處理結束後，處理液體L1從處理液體槽50 内被排出（步驟106)。 處理液體L1之排出係以以下順序a·〜c ·來實施。 a·在處理液體槽5〇處於直立的狀態下，使處理液體L1從 處理液體排出口 47排出（圖14)。 b·當處理液體L1排出到一定程度時，則利用圓筒24使處 82965 -21- 200304963 理液體槽50傾斜，使處理液體L1集中到處理液體排出口〇 在汶狀心下把處理液體L丨排出（圖1 5 )。如此則可降低殘留 於玻璃基板G上之處理液體L1之量。 c·依照需要，可使抽吸管63移動、下降到處理液體槽5〇 之角^ (處理液L 1集中之處），來抽吸處理液體L 1。其結果 為了進步降低殘留於玻璃基板G上之處理液體L1之量 (圖 16)。 可利用液面感測器來檢出下降後之液面的位置及處理液 體L1之殘存量，使前述&•〜c·的切換自動進行。亦即，當處 理液體L1之殘存量來到各自所定之基準值以下時，則自動 進行由a·到b·，由b.到c·的切換。 (7)進行玻璃基板G之洗淨及親水化處理（步驟1〇7) 在進行玻璃基板G之洗淨之前，先利用圓筒24使處理液體 槽50恢復為直立狀態。接著，從處理液體注入口 46向處理 液f豆槽50内注入用於稀釋處理液體L丨的純水w(圖17)。處理 液體注入口 46之處理液體L1與純水…注入的切換動作，可利 用閥來進行之~ 以純水w進行稀釋、增量後的處理液體L1係經由步驟si〇6 所述之三個順序而被排出。亦即，a•使處理液體槽5〇處於 直立的狀態下，從處理液體排出口 47排出；b·使處理液體槽 50處於傾斜的狀態下，從處理液體排出口 47排出；c•利用抽 吸管63進行排出。用於顯示前述順序a•〜c•的圖係與步驟 S 106所述之圖14〜16並無實質上的差異，因此省略之。 以純水W注入來稀釋處理液體L丨及把稀釋後之處理液體 82965 -22- 200304963 L1排出的動作，可依照需要而多次重複實施。反覆實施稀 釋、排出的結果，可使殘留於玻璃基板G上之處理液體L1 稀薄到不會影響下一行程之進行的程度。如前所述，可透 過對處理液體1^進行稀釋及排出，來洗淨玻璃基板G。 依照步驟S106、步騾S107之各順序a·〜c.，降低了處理液 月a L1之玟存！及稀釋後之處理液體L1之殘存量，因此可減 少重複貫施的次數，並促進洗淨工序的進行。 在玻璃基板G之洗淨結束後，對玻璃基板G之被進行陽極 化成後之夕結晶矽層滴下界面活化劑。其所產生的結果為 •夕結晶矽層 < 表面被界面活化劑所濕潤，而產親水性。 其目的在於，防止陽極化成所產生之多 確保隨後之陽極氧化處理的均…再者，；=活： 劑的滴下動作可利用抽吸管63來進行。 (8)接著，實施陽極氧化處理（步驟1〇8及圖18) 在進行陽極氧化處理之前’把陽極氧化處理用溶液(處理 液體L2)從處理液體注入口 46導入處理液體槽5〇内，直到其 到達所定之液^為止。 該處理液體L2的注入動作，係從處理液體注入口4㈣由 處理液體注人用溝槽49來進行；且與步驟⑻大約相同:係 利用處理液體注入用溝槽49之分支及處理液體注入用溝样 49C之寬度分佈，來使處理液體。的注入得到均一化。61 接著，在導通用電極45和陰極61之間施加電壓，實施 氧化處理。再者’該電壓係如步驟sl〇5所述，就時： 值而言，所施加的電壓可讓導通用電極45成為陽極 = 82965 -23- 200304963 陰極61成為陰極即可，並不需要使用完全具有Dc成份者。 實施此陽極氧化處理的結果，可使多孔矽之表面形成氧化 層；而該多孔矽係由陽極化成處理所形成者。 (9) 在陽極氧化處理結束後，處理液體L 2從處理液體槽5 〇 内被排出（步驟109)。 處理液體L2係經由步·驟S106所述之三個順序而被排出。 亦即，a·使處理液體槽5〇處於直立的狀態下，從處理液體排 出口 47排出；b·使處理液體槽5〇處於傾斜的狀態下，從處理 液^排出口 47排出；c.利用抽吸管63進行排出。用於顯示前 述順序a·〜c.的-圖係與步騾sl〇6所述之圖14〜16並無實質上 的差異，因此省略之。 (10) 進行玻璃基板G之洗淨及親水化處理（步驟11 〇) 在進行玻璃基板G之洗淨之前，先利用圓筒24使處理液體 槽50恢復為直立狀態。接著，從處理液體注入口牝向處理 液體槽50内注入用於稀釋處理液體L2的純水W(圖丨7)。 以純水w進行稀釋、增量後的處理液體L2係經由步驟“ο? (二個順序而被排出。亦即，a·使處理液體槽50處於直立 的狀心下彳文處理液體排出口 47排出；b·使處理液體槽5〇 處於傾斜的狀態下，從處理液體排出口 47排出；c_利用抽 及茗63進行排出。其詳細内容與步驟s 1 所述者並無實質 上的差異，因此省略之。 a 、 以純水W>王入來稀釋處理液體L1及把稀釋後之處理液體 L1排出的動作’可依照需要而多次重複實施。反覆實施稀 釋排出的結果，可使殘留於玻璃基板G上之處理液體L1 82965 -24- 200304963 稀薄到不會影響下一行程之進行的程度。如前所述，可透 過對處理液體L1進行稀釋及排出，來洗淨破璃基板G。 依照步驟S109、步驟S110之各順序a·〜c·，降低了處理液 ML1之殘存量及稀釋後之處理液體L1之殘存量，因此可減 少重複實施的次數，並促進洗淨工序的進行。 此洗淨工序與步驟s 107相異之處在於：處理液體L1變為 處理液體L2，及不實施親水化處理。 (11) 使處理液體槽側邵40上升，解除密封用環44之對玻 璃基板G的封膠，及解除導通用電極45與基板側電極eg之間 的電性連接（步驟S111及圖11)。 (12) 使已被洗淨之玻璃基板g之表面進行乾燥（步驟 S111) 〇 此一乾燥作業，譬如可利用風刀法、旋乾法等來吹散殘留 於玻璃基板G表面之洗淨液。 接著’停止以吸附機構34向液體處理槽底部30之對玻璃基 板G的吸附動作。然後，利用移動機構33使基板支撐部32上 升’並以未在屬中顯示之基板搬送機構，從基板支撐部32 上把玻璃基板G取下。 (其他之實施型態） 本發明之實施型態並不限於前述實施型態，而可以進行擴 大、變更，擴大、變更後之實施型態亦包含於本發明之技 術範圍。 (1)譬如，在上述實施型態中，鹵素燈62係朝！軸方向呈 長尺狀，且係使用圓筒狀（類似線光源）者；但如與呈球狀之 82965 -25- 200304963 光源（類似點光源）組合使用亦無不可。又，其數量亦可按需 要來決定。 (2)又，在上述實施型態中，僅在處理液體排出時，才使 處理液體槽50傾斜；但如讓處理液體槽50 一開始處理便經 常維持傾斜狀態，亦無不可。此時之處理液體槽5〇的傾斜 ’只要在基板處於被固定的情況下，就可以進行（嬖如圖8 之步驟S103〜SI 11之間）。 此外，傾斜角亦可接近垂直；其一例如圖19所示。圖19 所π <處理液體槽蓋部60A中設有封膠構件65 ;其可防止處 理液體等從與處理液體槽侧部4〇 A之間洩漏。其結果為，不 需要設置霧氣捕獲口 48。 產業上利用的可能性 利用與本發明有關之液體處理裝置及液體處理方法，可在 光 < 照射狀態下，可進行效率良好的基板處理。 圖式簡單說明 圖1係與本發明 < 第丨實施型態有關之液體處理裝置的部 份剖面圖。 ； 圖2係顯示圖1液體處理槽底部詳細結構的部份剖面圖。 圖3係顯示圖1液體處理槽蓋部設置於液體處理槽側部時 的詳細結構之部份剖面圖。 圖4係由上万觀察圖丨所示液體處理槽側部之上面圖。 圖5係顯示圖1所示液體處理槽側部之一部份内面的正面 圖。 圖6係顯示液體處理槽蓋部内之函素燈配置之上面圖。 82965 -26- 200304963 圖7係顯示相對於液體處理側部之_素燈之配置關係之上 面圖。 圖8係使用與第丨實施型態有關之液體處理裝置，連續實施 陽極化成處理、陽極氧化處理時之順序之一例的流程圖。 圖9係待機狀態之與第1實施型態有關之液體處理裝置的 部份剖面圖。 圖10係在玻璃基板G載置於液體處理槽底部上的狀態下 ，與第1實施型態有關之液體處理裝置的部份剖面圖。 圖11係把玻璃基板G固定於液體處理槽底部上的狀態下 ，與第1實施型態有關之液體處理裝置的部份剖面圖。 圖12係把玻璃基板G進行封膠及實施電性導通的狀能下 ，與第1實施型態有關之液體處理裝置的部份剖面圖。 圖13係進行陽極化成處理的狀態下，與第1實施型態有關 之液體處理裝置的部份剖面圖。 圖14係以直立狀悲進行陽極化成處理液體之排出時與第 1實施型態有關之液體處理裝置的部份剖面圖。 圖1 5係以傾斜狀態進行陽極化成處理液體之排出時，與第 1實施型態有關之液體處理裝置的部份剖面圖。 圖16係以抽吸管進行陽極化成處理液體之排出時，與第i 貫施型態有關之液體處理裝置的邵份剖面圖。 圖17係在進行玻璃基板之洗淨狀態下，與第丨實施刑能有 關之液體處理裝置的部份剖面圖。 圖18係在進行陽極氧化處理之狀態下，與第丨實施刑能有 關之液體處理裝置的部份剖面圖。 82965 -27- 200304963 圖1 9係液體處理裝置之變形例的部份剖面圖。 圖式代表符號說明 10 液體處理裝置 20 台座 21 下部台座 22 上部台座 24, 27 圓筒 25 支撐捧 26 支柱 30 ^ 處理液體槽底部 31 基板升降機構 32 基板支撐部 33 移動機構 34 吸附機構 40 處理液體槽侧部 42 上方開口部 43 下方開口邵 44 密封用環 45 導通用電極 46 處理液體注入口 47 處理液體排出口 48 霧氣捕獲口 49 處理液體注入用溝槽 50 處理液體槽 82965 -28- 200304963 60 處理液體槽蓋部 61 陰極 62, 62A〜62H 鹵素燈 63 抽吸管 65 封膠構件 41 斜面 46 溝槽 23 旋轉軸 41A 〜41D 斜面 48A, 48B - 霧氣捕獲口 LI 處理液體 L2 處理液體 G 玻璃基板 82965 -29-This is performed by a substrate transfer mechanism not shown in the figure; it places the surface to be processed (the surface on which polycrystalline silicon is formed) of the glass substrate G on. (3) The glass substrate g is maintained and fixed on the bottom 30 of the processing liquid tank (step 103 and FIG. 11). The operation of fixing the glass substrate G to the bottom 30 of the processing liquid tank is performed in the following two orders: a_ The substrate supporting portion 32 is lowered by the moving mechanism 33, and the glass substrate σ < the bottom and the bottom of the processing liquid tank 3 are moved. Touch it directly. b. The glass substrate G is vacuum-sucked by the suction mechanism 34 to fix the glass substrate G to the bottom 30 of the processing liquid tank. / 4) Use the support 26 to lower the processing liquid tank side portion 40 and connect it to the processing liquid tank bottom portion 30. In this way, the glass substrate 0 can be used to press the sealing ring 44. The result of the formation is to form a sealant, The conductive electrode 45 is brought into contact with the substrate-side electrode ⑽; and the sealant is used to prevent the leakage of the processing liquid between the sealing ring and the glass substrate G (step 104 and FIG. 12). 82965 -19- 200304963 (5) The treatment liquid tank cover portion 60 is lowered, and the anodizing solution (treatment liquid L1) is injected into the treatment liquid tank 50 through the treatment liquid injection port 46 and the treatment liquid discharge port 47, and anodization treatment is started. (Steps 5ι 05 and ι 3). Because of the sealing function of the sealing ring 44, when the processing liquid L1 is introduced, there is no leakage of the processing liquid L1 between the processing liquid tank side portion 40 and the processing liquid tank bottom portion 30 (glass substrate G). The liquid level of the processing liquid 11 is controlled to a predetermined position with respect to the processing liquid tank 50. In the method of controlling the position of the liquid level, the liquid level measurement using optical liquid level sensing can be adopted, or the introduction liquid volume control using a fixed pump can be used. The injection of the processing liquid L1 is performed from the processing liquid injection port 46 through the processing liquid injection groove 49. Since the processing liquid injection groove 49 is branched, the processing liquid L1 can be uniformly injected into the processing liquid tank 50. Furthermore, the width of the processing liquid injection groove 49C becomes wider as the distance from the processing liquid injection port 46 becomes larger, so that the processing liquid L can be injected more uniformly. After the injection of the processing liquid L1 is completed, a voltage 'is applied between the conducting electrode 45 and the cathode 6 i to perform anodization. It is not necessary to include a pulse component or an AC component in this voltage. In terms of the time average, the applied voltage may make the conductive electrode 45 a positive value and the cathode 61 a negative value. As a result of performing the anodizing process in this line, a part of the polycrystalline silicon layer was dissolved in the coating treatment liquid L1, and a plurality of fine pores, so-called porous stone eves, were formed. Along with the anodization process, light is irradiated to a plurality of crystalline silicon layers on the glass substrate G by using a lamp 62. The irradiation of the light causes positive holes to be formed in the polycrystalline silicon layer, thereby promoting the dissolution of silicon and assisting the formation of porous silicon. Moreover, 82965 -20- 200304963 If the polycrystalline silicon layer is a P-type ', there are already positive holes in the polycrystalline silicon layer, so it is not necessary to irradiate light. As described above, the glass substrate G can be uniformly irradiated with light by the following methods a. To c. a. The inclined surface 41 in the treatment liquid tank 50 is enlarged obliquely upward. A shadow or reflected light caused by the inner surface (slope 41) of the processing liquid tank 50 is made incident on the glass substrate G. b. The output of the toothed lamp 62 located on the periphery of the glass substrate G is made larger than that of the halogen lamp 62 located near the center of the glass substrate G. Due to the arrangement of the halogen lamps 62, the amount of light irradiated from the periphery of the glass substrate G tends to be weak. Increasing the light summer for the halogen lamp 62 near the periphery can eliminate the unevenness of the irradiation amount caused by the arrangement relationship of the halogen lamp 62. The processing is performed by using the processing liquid injection port 46 and the processing liquid discharge port 47. Injection and discharge of liquid. That is, the piping for injecting and discharging the processing liquid is not disposed between the halogen lamp 62 and the glass substrate G, and therefore, the light from the halogen lamp 62 is not shielded. (6) After the anodization process is completed, the processing liquid L1 is discharged from the processing liquid tank 50 (step 106). The discharge of the processing liquid L1 is performed in the following procedures a · ~ c ·. a. With the processing liquid tank 50 upright, the processing liquid L1 is discharged from the processing liquid discharge port 47 (Fig. 14). b. When the processing liquid L1 is discharged to a certain degree, use the cylinder 24 to tilt the 82965-21-200304963 physical liquid tank 50 to concentrate the processing liquid L1 to the processing liquid discharge port. 0 Place the processing liquid L under a Wen-shaped heart丨 Eject (Figure 1 5). This can reduce the amount of the processing liquid L1 remaining on the glass substrate G. c. According to need, the suction pipe 63 can be moved and lowered to an angle 50 of the processing liquid tank ^ (where the processing liquid L 1 is concentrated) to suck the processing liquid L 1. As a result, the amount of the processing liquid L1 remaining on the glass substrate G is reduced in order to progress (Fig. 16). A liquid level sensor can be used to detect the position of the lowered liquid surface and the remaining amount of the processing liquid L1, so that the aforementioned switching of & • ~ c · can be performed automatically. That is, when the residual amount of the processing liquid L1 falls below the respective predetermined reference value, the switching from a · to b · and b. To c · is automatically performed. (7) The glass substrate G is cleaned and hydrophilized (step 107). Before the glass substrate G is cleaned, the processing liquid tank 50 is returned to the upright state by the cylinder 24. Next, pure water w for diluting the processing liquid L1 is injected into the processing liquid f bean tank 50 from the processing liquid injection port 46 (Fig. 17). The switching operation of the processing liquid L1 and the pure water ... injection of the processing liquid injection port 46 can be performed by using a valve ~ The processing liquid L1 diluted and increased with pure water w is processed through three of the steps si〇6 Sequentially discharged. That is, a • the processing liquid tank 50 is in an upright state and discharged from the processing liquid discharge port 47; b • the processing liquid tank 50 is in an inclined state and is discharged from the processing liquid discharge port 47; c The straw 63 is discharged. The diagrams used to display the aforementioned sequence a • ~ c • are not substantially different from those of FIGS. 14-16 described in step S106, and are therefore omitted. The action of injecting pure water W to dilute the treatment liquid L 丨 and discharge the diluted treatment liquid 82965 -22- 200304963 L1 can be repeated as many times as necessary. As a result of repeated thinning and discharge, the processing liquid L1 remaining on the glass substrate G can be thinned to such an extent that it will not affect the progress of the next stroke. As described above, the glass substrate G can be cleaned by diluting and discharging the processing liquid 1 ^. According to the steps a · ~ c. In steps S106 and S107, the storage of the processing liquid month a L1 is reduced! And the residual amount of the diluted treatment liquid L1, the number of repeated application can be reduced, and the washing process can be promoted. After the cleaning of the glass substrate G is completed, the surface active agent is dropped on the crystalline silicon layer immediately after the glass substrate G is anodized. The results are: • The crystalline silicon layer < The surface is wetted by the interfacial activator, and is hydrophilic. The purpose is to prevent the anodization from generating as much as possible to ensure the subsequent anodizing treatment ... moreover, the = activity: the dripping action of the agent can be performed using the suction pipe 63. (8) Next, anodizing treatment is performed (step 108 and FIG. 18). Before the anodizing treatment is performed, the anodizing solution (treatment liquid L2) is introduced into the treatment liquid tank 50 from the treatment liquid injection port 46, Until it reaches the predetermined liquid ^. The processing liquid L2 injection operation is performed from the processing liquid injection port 4 液体 by the processing liquid injection groove 49; and is about the same as step :: it uses the branch of the processing liquid injection groove 49 and the processing liquid injection The width distribution of the groove-like 49C is used to process the liquid. The injection is homogenized. 61 Next, a voltage is applied between the conductive electrode 45 and the cathode 61, and an oxidation treatment is performed. Furthermore, the voltage is as described in step s105. In terms of time, the applied voltage can make the common electrode 45 become the anode = 82965 -23- 200304963. The cathode 61 can be the cathode, and it does not need to be used. Those with full Dc content. As a result of performing the anodizing treatment, an oxide layer can be formed on the surface of the porous silicon; and the porous silicon is formed by anodizing treatment. (9) After the anodizing process is completed, the processing liquid L 2 is discharged from the processing liquid tank 50 (step 109). The processing liquid L2 is discharged through three sequences described in step S106. That is, a. The processing liquid tank 50 is in an upright state and discharged from the processing liquid discharge port 47; b. The processing liquid tank 50 is in an inclined state and is discharged from the processing liquid ^ discharge port 47; The suction is performed by the suction pipe 63. The graphs used to display the aforementioned sequences a · ~ c. Are not substantially different from those of Figs. 14-16 described in step s106, so they are omitted. (10) The glass substrate G is cleaned and hydrophilized (step 11). Before the glass substrate G is cleaned, the processing liquid tank 50 is restored to an upright state by the cylinder 24. Next, pure water W for diluting the processing liquid L2 is injected into the processing liquid tank 50 from the processing liquid injection port ((Fig. 7). The treatment liquid L2 diluted and increased with pure water w is discharged through steps "ο? (Two sequences. That is, a. The treatment liquid tank 50 is placed in an upright position under the center of the center, and the liquid treatment liquid discharge port is discharged. 47 discharge; b. Discharge the treatment liquid tank 50 from the treatment liquid discharge port 47 with the tilted state; c_ discharge by suction and 茗 63. The details are not substantially the same as those described in step s 1 The differences are omitted. A. The action of diluting the processing liquid L1 with pure water W> and draining the diluted processing liquid L1 can be repeated as many times as necessary. Repeated implementation of the result of dilution and drainage can make the The processing liquid L1 remaining on the glass substrate G 82965 -24- 200304963 is thin enough so as not to affect the progress of the next stroke. As described above, the broken glass substrate can be cleaned by diluting and discharging the processing liquid L1. G. According to the steps a · ~ c · in steps S109 and S110, the residual amount of the processing liquid ML1 and the residual amount of the diluted processing liquid L1 are reduced, so the number of repeated implementations can be reduced, and the cleaning process can be promoted. get on This cleaning step is different from step s 107 in that the processing liquid L1 is changed to the processing liquid L2, and the hydrophilization treatment is not performed. (11) The processing liquid tank side 40 is raised, and the sealing ring 44 is released from the glass. Sealing of the substrate G, and releasing the electrical connection between the common electrode 45 and the substrate-side electrode eg (step S111 and FIG. 11). (12) Drying the surface of the cleaned glass substrate g (step S111) ) 〇 This drying operation, for example, can use the wind knife method, spin-drying method to blow off the cleaning liquid remaining on the surface of the glass substrate G. Then 'stop the glass substrate G with the adsorption mechanism 34 to the bottom 30 of the liquid processing tank Then, the substrate support portion 32 is raised by the moving mechanism 33, and the glass substrate G is removed from the substrate support portion 32 with a substrate transfer mechanism not shown in the belonging. (Other implementation types) The implementation form of the invention is not limited to the aforementioned implementation form, but can be expanded, changed, and the expanded and changed implementation form is also included in the technical scope of the present invention. (1) For example, in the above implementation form, halogen 62 Lights The axis direction is long and cylindrical (similar to a linear light source); however, it is also possible to use it in combination with a spherical 82986 -25- 200304963 light source (similar to a point light source). Also, the number can be (2) In the above embodiment, the processing liquid tank 50 is tilted only when the processing liquid is discharged; however, if the processing liquid tank 50 is initially treated, the tilting state is often maintained, and there is no No. The tilting of the processing liquid tank 50 at this time can be performed as long as the substrate is fixed (e.g., between steps S103 and SI 11 in FIG. 8). In addition, the tilting angle can also be close to vertical; An example is shown in FIG. 19. In Fig. 19, a sealing member 65 is provided in the processing liquid tank cover portion 60A, which prevents the processing liquid and the like from leaking from the processing liquid tank side portion 40A. As a result, it is not necessary to provide the mist capture port 48. Industrial Applicability With the liquid processing apparatus and the liquid processing method related to the present invention, it is possible to perform efficient substrate processing under a light < irradiation state. Brief Description of the Drawings Fig. 1 is a partial cross-sectional view of a liquid processing apparatus related to the < first embodiment of the present invention. Figure 2 is a partial cross-sectional view showing the detailed structure of the bottom of the liquid processing tank of Figure 1. Fig. 3 is a partial cross-sectional view showing a detailed structure when the lid portion of the liquid processing tank of Fig. 1 is provided on a side portion of the liquid processing tank. FIG. 4 is a top view of the side of the liquid processing tank shown in FIG. Fig. 5 is a front view showing an inner surface of a part of a side portion of the liquid processing tank shown in Fig. 1. Fig. 6 is a top view showing the arrangement of a letter lamp in the cover portion of the liquid processing tank. 82965 -26- 200304963 Fig. 7 is a top view showing the arrangement relationship of the _ prime lamp relative to the liquid processing side. Fig. 8 is a flowchart showing an example of a sequence in which anodizing treatment and anodizing treatment are continuously performed using a liquid processing apparatus related to the first embodiment. Fig. 9 is a partial sectional view of the liquid processing apparatus according to the first embodiment in a standby state. FIG. 10 is a partial cross-sectional view of the liquid processing apparatus related to the first embodiment in a state where the glass substrate G is placed on the bottom of the liquid processing tank. Fig. 11 is a partial cross-sectional view of the liquid processing apparatus related to the first embodiment in a state where the glass substrate G is fixed on the bottom of the liquid processing tank. FIG. 12 is a partial cross-sectional view of the liquid processing apparatus related to the first embodiment in a state where the glass substrate G is sealed and electrically conductive. Fig. 13 is a partial cross-sectional view of a liquid processing apparatus related to the first embodiment in a state where anodization is performed. Fig. 14 is a partial cross-sectional view of the liquid processing apparatus related to the first embodiment when the anodizing treatment liquid is discharged in an upright state. Fig. 15 is a partial cross-sectional view of a liquid processing apparatus related to the first embodiment when the anodization treatment liquid is discharged in an inclined state. Fig. 16 is a sectional view of a liquid processing apparatus related to an i-th through-applied mode when the anodizing treatment liquid is discharged using a suction pipe. Fig. 17 is a partial cross-sectional view of a liquid processing apparatus related to the execution of criminal energy in a state where a glass substrate is being cleaned. Fig. 18 is a partial cross-sectional view of a liquid processing apparatus related to the execution of criminal energy in the state of anodizing. 82965 -27- 200304963 Fig. 19 Partial cross-sectional view of a modification of the 9-series liquid processing apparatus. Description of symbolic symbols 10 Liquid processing device 20 Base 21 Lower base 22 Upper base 24, 27 Cylinder 25 Supporting bracket 26 Pillar 30 ^ Processing liquid tank bottom 31 Substrate lifting mechanism 32 Substrate supporting portion 33 Moving mechanism 34 Adsorption mechanism 40 Processing liquid Tank side 42 Upper opening 43 Lower opening Shao 44 Sealing ring 45 General-purpose electrode 46 Process liquid injection port 47 Process liquid discharge port 48 Mist capture port 49 Process liquid injection groove 50 Process liquid tank 82965 -28- 200304963 60 Processing liquid tank cover 61 Cathode 62, 62A ~ 62H Halogen lamp 63 Suction tube 65 Sealing member 41 Inclined surface 46 Groove 23 Rotary shaft 41A to 41D Inclined surface 48A, 48B-Mist capture port LI Process liquid L2 Process liquid G Glass substrate 82965 -29-