JP2003209454A - Diplexer, and high-frequency switch and antenna duplexer using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a diplexer and a high-frequency switch using the same in which signals of a high frequency band can be passed without being attenuated over a wide frequency band. <P>SOLUTION: A low-pass filter LPF 82 comprising the diplexer is provided with the parallel resonance circuit of a first capacitor C1 and a first inductor L1 and the serial resonance circuit of a second capacitor C2 and a second inductor L2 to form two attenuation poles of the LPF 82. Thus, the passband of a high-pass filter HPF 83 can be widened. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a diplexer used for a mobile phone and the like, a high frequency switch and an antenna duplexer using the same, and more specifically, a plurality of communication systems having different frequency bands can be used. The present invention relates to a diplexer for use in a wireless communication device such as a mobile phone, a high frequency switch using the same, and an antenna duplexer.

[0002]

2. Description of the Related Art EGSM (Enhanced-Glo), which has been used mainly in Europe as a mobile phone system.
bal System for Mobile Com
DCS (Digital Cellular Sys) using the frequency of 1.8 GHz band, which has come to be used with the expansion of users.
tem) system, UMTS that realizes next-generation high-speed communication
(Universal Mobile Telecom
PCS (Personal Communication) using a frequency of 1.9 GHz band which is mainly used in the United States.
There are a plurality of methods such as the ns Services method.

FIG. 19 is a diagram showing frequency bands used in the EGSM system, the DCS system and the UMTS system. In FIG. 19, “T” described in () below the method name
“X” means a frequency band used for transmission, and “Rx” means a frequency band used for reception. As shown in FIG.
80-960MHz, DCS method 1710-188
0MHz, UMTS system 1920-2170MHz
To use. As can be seen from FIG. 19, the mobile phone system is roughly classified into a system using a low frequency band such as the EGSM system and a system using a high frequency band like the DCS or UMTS system.

In recent years, due to the expansion of users of mobile communication such as mobile phones and the globalization of the system thereof, it has been desired to develop a mobile phone capable of utilizing the above-mentioned plural systems. For example, the development of a mobile phone capable of using both the EGSM system using a low frequency band which has been conventionally used and the DCS or UMTS system using a high frequency band which has been recently used has been developed. Is desired. In the mobile phone as described above, it is necessary to separate and synthesize the low frequency band and the high frequency band in the internal circuit of the mobile phone. This is because a low frequency band signal and a high frequency band signal have different available power amplifiers.

Conventionally, a device called a diplexer has been used for separating and synthesizing a signal in a low frequency band and a signal in a high frequency band. FIG. 20 is a diagram showing an equivalent circuit of a conventional diplexer (for example, Patent Document 1).
reference). In FIG. 20, the conventional diplexer is the first
Low-pass filter (hereinafter, LPF (Low Pass F) connected between the terminal P51 and the second terminal P52 of the
ilter) 10, the first terminal P51 and the third
High-pass filter (hereinafter referred to as HPF (High Pass Filter)) 2 connected to the terminal P53 of
Including 0 and.

In the LPF 10, the first inductor L51 and the first capacitor C51 are connected in parallel between the first terminal P51 and the second terminal P52, and the first inductor L51 and the first capacitor C51 are connected between the second terminal P52 and the ground. The second capacitor C52 is connected in series. The LPF 10 passes signals in a low frequency band such as the EGSM system.

In the HPF 20, a third capacitor C53 and a fourth capacitor C54 are connected in series between the first terminal P51 and the third terminal P53, and the third capacitor C53 and the fourth capacitor C54 are connected. The second inductor L52 and the fifth capacitor C55 are connected in series between the connection point of and the ground. HPF20 is DC
A signal in a high frequency band such as S or UMTS is passed.

The first inductor L5 in the LPF 10
1 and the first capacitor C51 in parallel resonance circuit, HP
The constant is set so as to resonate with a signal in a high frequency band corresponding to the vicinity of the pass band of F20. When the parallel resonant circuit resonates, the impedance becomes very large. Therefore, the LPF 10 does not pass signals in the high frequency band. That is, the LPF 10 forms an attenuation pole in the high frequency band. Here, the attenuation pole refers to a position where a certain specific frequency is greatly attenuated in the attenuation band of the filter.

FIG. 21 is a diagram showing the pass characteristic of the LPF 10. In FIG. 21, the curve indicated by the dotted line indicates the pass characteristic of the LPF 10 shown on the scale on the right side of the vertical axis of the graph. As shown in FIG. 20, the LPF 10 is UM
Attenuation pole AP50 is formed in the frequency band of TS system, and EGS
The signal passes best in the M type frequency band.

The second inductor L5 in the HPF 20
The series resonance circuit of the second capacitor C55 and the second capacitor C55 is (L
A constant is defined so as to resonate with a signal in the EGSM frequency band (corresponding to the vicinity of the pass band of the PF 10). When the series resonance circuit resonates, the impedance becomes very small and approaches zero. From the first terminal P51 to the third terminal P
When looking at 53, the impedance is much higher than that of the LPF 10. Therefore, when a signal in the frequency band of the EGSM system is input to the first terminal P51, the HPF
20 does not pass signals in the EGSM frequency band.
That is, the HPF 20 forms an attenuation pole near the EGSM frequency band.

FIG. 22 is a diagram showing the pass characteristic of the HPF 20. The meaning of the curve represented by the dotted line in FIG. 22 is the same as in FIG. As shown in FIG. 22, the HPF 20
Forms the attenuation pole AP51 in the frequency band of the EGSM system and passes the signal most in the frequency band of the UMTS system.

In the conventional diplexer as described above, a signal in the EGSM frequency band input to the first terminal P51 can hardly pass through the HPF 20, but can pass through the LPF 10 almost completely. , Are transmitted to the LPF 10 side without being transmitted to the HPF 20 side, and can be taken out from the second terminal P52. Further, although the signal in the high frequency band input to the first terminal P51 can hardly pass through the LPF 10, it can almost completely pass through the HPF 20, so that it is not transmitted to the LPF 10 side, It is transmitted to the HPF 20 side and can be taken out from the third terminal P53.
As described above, it becomes possible to separate and combine the signal in the low frequency band and the signal in the high frequency band by using the conventional diplexer.

[0013]

[Patent Document 1] Japanese Patent Laid-Open No. 2000-349581 (paragraph 0003, FIG. 6)

[0014]

[Problems to be Solved by the Invention] As shown in FIG.
In the LPF 10, the signal in the UMTS frequency band is sufficiently attenuated and cannot pass through the LPF 10, but the signal in the DCS frequency band is leaked to the LPF 10 due to insufficient attenuation. . Therefore, as shown in FIG. 22, the signal in the frequency band of the DCS system is attenuated by the amount of H that is leaked to the LPF 10.
The problem of passing through the PF 20 arises. Therefore,
There is a problem in using it in a mobile phone that can use both the DCS method and the UMTS method.

As described above, in the conventional diplexer as described above, in the LPF 10 between the first terminal P51 and the second terminal P52, one parallel resonant circuit is used for the HPF2.
Since the attenuation pole AP50 is formed in the vicinity of the pass band of 0, it is difficult to secure the attenuation amount over a wide band. As a result, in the conventional diplexer, the pass characteristic of the high-pass filter HPF20 becomes a narrow band, and the signal in the high-frequency band used in a plurality of mobile phone systems is not attenuated over a wide band. It was difficult to pass.

Therefore, an object of the present invention is to provide a diplexer which allows a signal in a high frequency band to pass over a wide area without being attenuated.

Another object of the present invention is to provide a high frequency switch using a diplexer that allows a signal in a high frequency band to pass over a wide area without being attenuated.

Still another object of the present invention is to provide an antenna duplexer using a diplexer that allows a signal in a high frequency band to pass over a wide area without being attenuated.

[0019]

The first aspect of the present invention is a diplexer for transmitting and receiving radio waves in a plurality of different frequency bands for separation and synthesis, and a first terminal connected to the antenna side. A low-pass filter, which is arranged between a second terminal for transmitting and receiving a signal in the low-frequency band, passes only a signal in the low-frequency band, and a first terminal and a high-frequency band A high-pass filter that passes only a signal in a high-frequency band disposed between the third terminal for transmitting and receiving the signal of, and the low-pass filter includes at least two resonance circuits. Therefore, at least two attenuation poles are formed on the high frequency side of the pass band.

According to the first aspect of the present invention, since the two resonance circuits included in the low pass filter form two attenuation poles on the high band side of the pass band, the low pass filter has a high attenuation band. It is possible to sufficiently attenuate the signal in the frequency band over a wide area. Therefore, in the high pass filter, it is possible to provide a diplexer that can pass a signal in a high frequency band over a wide range without being attenuated.

According to a second aspect of the present invention, in the first aspect, the high pass filter includes one resonance circuit, and the high pass filter has one attenuation pole formed on the low pass side of the pass band. The band pass filter is characterized in that it only passes signals in the lowest frequency band.

According to the second aspect of the present invention, since one resonance circuit included in the high pass filter forms one attenuation pole on the low band side of the pass band, the attenuation of the signal in the low frequency band is achieved. Can be suppressed, and the low-pass filter can pass only the signal in the lowest frequency band. As a result, for example, it becomes possible to separate and synthesize a signal in the frequency band of the EGSM system and a signal in the frequency band of the high frequency band DCS, UMTS, PCS, or the like.

In a third aspect based on the first or second aspect, the low-pass filter is a first inductor arranged as two resonance circuits between the first terminal and the second terminal. And a first resonance capacitor, and a series resonance circuit composed of a second inductor and a second capacitor arranged between the second terminal and the ground.

According to the third invention, one attenuation pole is formed when the parallel resonance circuit of the low pass filter resonates, and one attenuation pole is formed when the series resonance circuit of the low pass filter resonates. Since it is formed, it becomes possible to secure a sufficient amount of attenuation over a wide area. Therefore,
It is possible to provide a diplexer that allows a signal in a high frequency band to pass over a wide area without being attenuated. Further, with the configuration of the third invention, it is possible to provide a diplexer having a wide band pass characteristic with a minimum circuit configuration.

In a fourth aspect based on the third aspect, the high-pass filter is a series circuit including a third capacitor and a fourth capacitor arranged between the first terminal and the third terminal. And as a resonance circuit, a third capacitor and a fourth
A series resonance circuit including a third inductor and a fifth capacitor arranged between the connection point with the capacitor and the ground.

According to the fourth aspect, one attenuation pole is formed when the series resonance circuit of the high pass filter resonates, so that attenuation of signals in the low frequency band can be suppressed. It will be possible.

In a fifth aspect based on the fourth aspect, the low pass filter and the high pass filter have a plurality of strip line electrodes for realizing the first to third inductors and the first to fifth capacitors. And a plurality of dielectric layers forming a plurality of via electrodes for connecting the plurality of strip line electrodes and the plurality of capacitor electrodes to each other. Is characterized by.

According to the fifth aspect, since the low-pass filter and the high-pass filter are formed inside one laminated body, it is possible to reduce the size and height of the diplexer. Becomes

In a sixth aspect based on the fifth aspect, at least one of the plurality of dielectric layers includes a ground electrode, and at least one stripline electrode for realizing the first inductor is provided. Is at least one stripline electrode that is arranged above the ground electrode in the stacking direction and that realizes the second inductor, and at least one stripline electrode that realizes the third inductor. Is also arranged in the upper layer or the same layer with respect to the stacking direction.

According to the sixth invention, the first inductor through which the signal directly passes is arranged in a layer above the ground electrode,
By arranging it on the same layer or above the other stripline electrodes, it is possible to reduce stray capacitance and the like generated between the first inductor and other electrode patterns such as the ground electrode and the capacitor electrode. It is possible to reduce the change in the characteristics. As a result, it is possible to provide a diplexer having a desired circuit.

In a seventh aspect based on the fifth or sixth aspect, at least one dielectric layer of the plurality of dielectric layers includes a ground electrode, and the first aspect of the parallel resonant circuit of the low pass filter is provided. At least one capacitor electrode that realizes a capacitor is arranged in a layer above the ground electrode in the stacking direction, and at least one strip that realizes the first inductor in the parallel resonance circuit of the low-pass filter. The line electrode is arranged in an upper layer with respect to the capacitor electrode in the stacking direction.

According to the seventh invention, the ground electrode and the first
By arranging the capacitor electrode that realizes the first capacitor between the stripline electrode that realizes the inductor and the stray capacitance that is generated between the first inductor and the ground electrode, It is possible to provide a diplexer having a desired circuit.

According to an eighth aspect of the present invention, in any one of the fifth to seventh aspects, at least one of the plurality of dielectric layers includes a ground electrode and is used in a series resonance circuit of a low pass filter. At least one or more capacitor electrodes that realize the second capacitor are arranged above the ground electrode in the stacking direction and at least one capacitor that realizes the second inductor in the series resonance circuit of the low-pass filter. The above stripline electrode is arranged in a layer above the capacitor electrode in the stacking direction.

According to the eighth invention, the ground electrode and the second electrode
By arranging the capacitor electrode that realizes the second capacitor between the stripline electrode that realizes the inductor and the stray capacitance that occurs between the second inductor and the ground electrode, It is possible to provide a diplexer having a desired circuit.

In a ninth invention according to any one of the fifth to eighth inventions, at least one dielectric layer among the plurality of dielectric layers includes a ground electrode, and a series resonance circuit of a high pass filter is provided. At least one or more capacitor electrodes that realize the fifth capacitor are arranged above the ground electrode in the stacking direction and at least one capacitor electrode that realizes the third inductor in the series resonance circuit of the high-pass filter. The above stripline electrode is arranged in a layer above the capacitor electrode in the stacking direction.

According to the ninth invention, the ground electrode and the third electrode are provided.
By arranging the capacitor electrode that realizes the fifth capacitor between the stripline electrode that realizes the inductor and the stray capacitance that is generated between the third inductor and the ground electrode, It is possible to provide a diplexer having a desired circuit.

A tenth aspect of the present invention is a high-frequency switch for switching between transmission and reception of radio waves of different frequency bands, and transmits radio waves of different frequency bands via a first terminal connected to the antenna side. A diplexer for transmitting / receiving and separating / combining, a low-frequency transmission / reception switching circuit connected to the second terminal for transmitting / receiving a low-frequency signal in the diplexer, and transmitting / receiving a high-frequency signal in the diplexer And a high-frequency transmission / reception switching circuit connected to the third terminal for transmitting the low-frequency signal only in the low-frequency band disposed between the first terminal and the second terminal. The low-pass filter includes a low-pass filter and a high-pass filter that passes only a signal in a high-frequency band that is arranged between the first terminal and the third terminal. Both have two resonant circuits, the low-pass filter, characterized by at least two form an attenuation pole at the high frequency side of the pass band by the action of the two resonant circuits.

According to the tenth aspect of the invention, since the two resonance circuits included in the low pass filter of the diplexer form two attenuation poles on the high pass side of the pass band, the low pass filter has a high pass band. It is possible to sufficiently attenuate the signal in the frequency band of over a wide range, and the high pass filter provides a high frequency switch that can pass the signal in the high frequency band over a wide range without being attenuated. It becomes possible.

An eleventh invention is the tenth invention, wherein
The high pass filter includes one resonance circuit, and the high pass filter forms one attenuation pole on the low band side of the pass band,
The low-pass filter is characterized in that it only passes signals in the lowest frequency band.

According to the eleventh aspect of the present invention, since one resonance circuit included in the high-pass filter forms one attenuation pole on the low-frequency side of the pass band, attenuation of signals in the low-frequency band is performed. Can be suppressed, and the low-pass filter can pass only the signal in the lowest frequency band. Thus, for example, it is possible to provide a high frequency switch capable of separating and synthesizing a signal in the frequency band of the EGSM system and a signal in the frequency band of the high frequency band DCS, UMTS, PCS system and the like.

In a twelfth aspect based on the tenth or eleventh aspect, the low pass filter is a first inductor arranged as two resonance circuits between the first terminal and the second terminal. And a first resonance capacitor, and a series resonance circuit composed of a second inductor and a second capacitor arranged between the second terminal and the ground.

According to the twelfth aspect, one attenuation pole is formed when the parallel resonance circuit of the low pass filter resonates, and one attenuation pole is formed when the series resonance circuit of the low pass filter resonates. Since it is formed, it becomes possible to secure a sufficient amount of attenuation over a wide area. Therefore,
It is possible to provide a high frequency switch capable of separating and synthesizing a signal in a high frequency band over a wide range without attenuating. Further, with the configuration of the twelfth invention, it is possible to provide a high frequency switch having a wide band pass characteristic with a minimum circuit configuration.

A thirteenth invention is the twelfth invention, wherein
The high pass filter includes a series circuit including a third capacitor and a fourth capacitor arranged between the first terminal and the third terminal, and a third circuit and a fourth capacitor as a resonance circuit. And a series resonant circuit including a third inductor and a fifth capacitor arranged between the connection point of the and and the ground.

According to the thirteenth aspect, one attenuation pole is formed when the series resonance circuit of the high pass filter resonates, so that attenuation of signals in the low frequency band can be suppressed. It is possible to provide a high-frequency switch that can be used.

A fourteenth invention is the thirteenth invention, wherein
Multiple stripline electrodes that realize inductors,
It is realized by a laminated body of a plurality of dielectric layers in which a plurality of capacitor electrodes for realizing a capacitor and a plurality of via hole conductors for connecting a plurality of strip line electrodes and a plurality of capacitor electrodes are formed.

According to the fourteenth aspect, since the inductor and the capacitor for forming the high frequency switch are formed inside one laminated body, the high frequency switch can be downsized and the height can be reduced. It becomes possible.

The fifteenth invention is the fourteenth invention, wherein
The laminated body includes a plurality of stripline electrodes that realize first to third inductors and a plurality of capacitor electrodes that realize first to fifth capacitors, for realizing a low-pass filter and a high-pass filter. , And a plurality of via-hole conductors connecting the plurality of strip line electrodes and the plurality of capacitor electrodes are formed.

According to the fifteenth aspect of the invention, since the low pass filter and the high pass filter of the diplexer are formed inside the laminated body constituting the high frequency switch, further miniaturization of the high frequency switch, It is possible to reduce the height.

The 16th invention is the same as the 15th invention,
At least one dielectric layer of the plurality of dielectric layers includes a ground electrode, and at least one stripline electrode that realizes the first inductor is arranged above the ground electrode in a stacking direction. And at least one stripline electrode that realizes the second inductor and at least one stripline electrode that realizes the third inductor are arranged in the upper layer or the same layer in the stacking direction. Is characterized by.

According to the sixteenth aspect of the invention, the first inductor through which the signal directly passes is arranged on the upper layer of the ground electrode, and further on the same layer or above the other strip line electrodes, whereby the first inductor is arranged. Since it is possible to reduce the stray capacitance generated between the inductor and other electrode patterns such as the ground electrode and the capacitor electrode, it is possible to reduce the change in the characteristics of the inductor. as a result,
A high frequency switch having a desired circuit can be provided.

In a seventeenth aspect based on the fifteenth aspect or the sixteenth aspect, at least one of the plurality of dielectric layers includes a ground electrode, and the first pass-through filter in the parallel resonance circuit of the low pass filter. At least one capacitor electrode that realizes a capacitor is arranged in a layer above the ground electrode in the stacking direction, and at least one strip that realizes the first inductor in the parallel resonance circuit of the low-pass filter. The line electrode is arranged in an upper layer with respect to the capacitor electrode in the stacking direction.

According to the seventeenth aspect of the invention, by disposing the capacitor electrode for realizing the first capacitor between the ground electrode and the stripline electrode for realizing the first inductor, the first inductor electrode and Since it is possible to reduce stray capacitance and the like generated between the ground electrode and the ground electrode, it is possible to provide a high frequency switch having a desired circuit.

In an eighteenth aspect of the present invention according to any one of the fifteenth to seventeenth aspects, at least one of the plurality of dielectric layers includes a ground electrode, and a series resonance circuit of a low pass filter is provided. At least one or more capacitor electrodes that realize the second capacitor are arranged above the ground electrode in the stacking direction and at least one capacitor that realizes the second inductor in the series resonance circuit of the low-pass filter. The above stripline electrode is arranged in a layer above the capacitor electrode in the stacking direction.

According to the eighteenth aspect of the present invention, the capacitor electrode for realizing the second capacitor is arranged between the ground electrode and the strip line electrode for realizing the second inductor, so that the second inductor electrode Since it is possible to reduce stray capacitance and the like generated between the ground electrode and the ground electrode, it is possible to provide a high frequency switch having a desired circuit.

In a nineteenth aspect of the present invention based on any one of the fifteenth to eighteenth aspects, at least one of the plurality of dielectric layers includes a ground electrode, and the high-pass filter has a series resonance circuit. At least one or more capacitor electrodes that realize the fifth capacitor are arranged above the ground electrode in the stacking direction and at least one capacitor electrode that realizes the third inductor in the series resonance circuit of the high-pass filter. The above stripline electrode is arranged in a layer above the capacitor electrode in the stacking direction.

According to the nineteenth aspect of the invention, by disposing the capacitor electrode for realizing the fifth capacitor between the ground electrode and the stripline electrode for realizing the third inductor, the third inductor electrode and Since it is possible to reduce stray capacitance and the like generated between the ground electrode and the ground electrode, it is possible to provide a high frequency switch having a desired circuit.

In a twentieth aspect of the present invention according to any one of the fourteenth to nineteenth aspects, at least one of the low frequency transmission / reception switching circuit and the high frequency transmission / reception switching circuit is a circuit for switching transmission / reception in accordance with a voltage applied to a diode. Yes, the diode is mounted on the top surface of the stack.

According to the twentieth aspect of the invention, it is possible to further reduce the size and height of the high frequency switch.

In a twenty-first aspect according to any one of the fourteenth to twentieth aspects, at least one of the low-frequency transmission / reception switching circuit and the high-frequency transmission / reception switching circuit is a GaAs switch, and the GaAs switch is the upper surface of the laminate. It is implemented in.

According to the twenty-first aspect, it is possible to further reduce the size and height of the high frequency switch.

A twenty-second aspect of the present invention is an antenna duplexer for simultaneously transmitting and receiving radio waves of different frequency bands, wherein a plurality of different frequency bands are connected via a first terminal connected to the antenna side. A diplexer for transmitting and receiving radio waves for separation and synthesis, and a first diplexer connected to a second terminal for transmitting and receiving low frequency signals in the diplexer.
Second duplexer and a second terminal connected to a third terminal for transmitting and receiving a high frequency signal in the diplexer.
A duplexer, wherein the diplexer includes a low-pass filter which is arranged between the first terminal and the second terminal and passes only a signal in a low-frequency band, and the first terminal and the third terminal.
And a high-pass filter that passes only a signal in a high-frequency band that is arranged between the low-pass filter and at least two resonant circuits, and the low-pass filter is a dual-pass filter. It is characterized in that at least two attenuation poles are formed on the high frequency side of the pass band by the action of one resonance circuit.

According to the twenty-second aspect, since the two resonance circuits included in the low pass filter of the diplexer form two attenuation poles on the high pass side of the pass band, the low pass filter has a high pass band. It is possible to sufficiently attenuate signals in the frequency band of the above over a wide area, and the high-pass filter provides an antenna duplexer that can pass signals in the high frequency band over a wide area without attenuation. It becomes possible to do.

The twenty-third aspect of the invention is the twenty-second aspect of the invention.
The high pass filter includes one resonance circuit, and the high pass filter forms one attenuation pole on the low band side of the pass band,
The low-pass filter is characterized in that it only passes signals in the lowest frequency band.

According to the twenty-third aspect, since one resonance circuit included in the high pass filter forms one attenuation pole on the low band side of the pass band, the attenuation of the signal in the low frequency band is suppressed. Can be suppressed, and the low-pass filter can pass only the signal in the lowest frequency band. As a result, for example, it is possible to provide an antenna duplexer capable of separating and synthesizing a signal in the frequency band of the IS-95 system and a signal in the frequency band of the high frequency PCS system.

In a twenty-fourth aspect based on the twenty-second or twenty-third aspect, the low-pass filter is a first inductor arranged as two resonance circuits between the first terminal and the second terminal. And a first resonance capacitor, and a series resonance circuit composed of a second inductor and a second capacitor arranged between the second terminal and the ground.

A twenty-fifth invention is the twenty-fourth invention, wherein
The high pass filter includes a series circuit including a third capacitor and a fourth capacitor arranged between the first terminal and the third terminal, and a third circuit and a fourth capacitor as a resonance circuit. And a series resonant circuit including a third inductor and a fifth capacitor arranged between the connection point of the and and the ground.

The twenty-sixth invention is the twenty-fifth invention, wherein
Multiple stripline electrodes that realize inductors,
It is realized by a laminated body of a plurality of dielectric layers in which a plurality of capacitor electrodes for realizing a capacitor and a plurality of via hole conductors for connecting a plurality of strip line electrodes and a plurality of capacitor electrodes are formed.

A twenty-seventh aspect of the present invention is a radio communication device for transmitting and receiving radio waves in a plurality of frequency bands, comprising a high frequency switch for switching transmission and reception of radio waves in a plurality of different frequency bands, the high frequency switch being on the antenna side. A diplexer for transmitting and receiving radio waves in different frequency bands via the first terminal connected to the second terminal, and a second diplexer for transmitting and receiving a low frequency signal in the diplexer.
And a high frequency transmission / reception switching circuit connected to a third terminal for transmitting / receiving a high frequency signal in the diplexer, wherein the diplexer has a first terminal. And a second terminal, which are arranged between the first terminal and the third terminal, and a low-pass filter which passes only signals in the low-frequency band, which are arranged between the first terminal and the third terminal. And a low pass filter having at least two resonance circuits, and the low pass filter attenuates to the high band side of the pass band by the action of the two resonance circuits. It is characterized in that at least two poles are formed.

According to the twenty-seventh aspect of the present invention, the radio frequency band of a plurality of high frequency bands is controlled by the high frequency switch using the diplexer having the characteristic that the signals in the high frequency band pass over a wide area without being attenuated. It is possible to provide a wireless communication device capable of transmitting and receiving.

A twenty-eighth invention is a wireless communication device for simultaneously transmitting and receiving radio waves in a plurality of frequency bands, comprising an antenna duplexer for simultaneously transmitting and receiving radio waves in a plurality of different frequency bands, and the antenna duplexer is , A diplexer for transmitting and receiving radio waves of different frequency bands through the first terminal connected to the antenna side for separation and synthesis, and a second diplexer for transmitting and receiving low frequency signals in the diplexer. A first duplexer connected to the terminal, and a second duplexer connected to the third terminal for transmitting and receiving a high frequency signal in the diplexer,
The diplexer is arranged between the first terminal and the third terminal, and a low-pass filter which is arranged between the first terminal and the second terminal and passes only a signal in a low-frequency band. And a high-pass filter that passes only a signal in a high-frequency band, the low-pass filter having at least two resonance circuits, and the low-pass filter passes by the action of the two resonance circuits. At least two attenuation poles are formed on the high band side of the band.

[0071]

(First Embodiment) FIG. 1 is a diagram showing an equivalent circuit of a diplexer according to a first embodiment of the present invention. In FIG. 1, the diplexer according to the first embodiment is a low-pass filter LPF (hereinafter, simply LPF) connected between a first terminal P1 and a second terminal P2.
82) and a high-pass filter HPF (hereinafter, simply H) connected between the first terminal P1 and the third terminal P3.
PF) 83).

In the LPF 82, the first inductor L1 and the first capacitor C1 are connected in parallel between the first terminal P1 and the second terminal P2, and the first inductor L1
The third inductor L3 is connected in series to the parallel circuit of the first capacitor C1 and the first inductor C1, and the parallel circuit of the first inductor L1 and the first capacitor C1 and the third inductor L3.
The second inductor L2 between the connection point with 3 and the ground.
And the second capacitor C2 are connected in series. LPF
Reference numeral 82 passes a signal in the low frequency band.

In the HPF 83, the third capacitor C3 and the fourth capacitor C4 are connected in series between the first terminal P1 and the third terminal P3, and the third capacitor C3
The fourth inductor L4 and the fifth capacitor C5 are connected in series between the connection point between the third capacitor C4 and the fourth capacitor C4 and the ground. The HPF 83 passes signals in the high frequency band.

FIG. 2 shows the LP in the diplexer of FIG.
It is a figure which shows the passage characteristic of F82. The function of the LPF 82 will be described below with reference to FIG. LPF8
The first inductor L1 and the first capacitor C in FIG.
The constant of the parallel resonance circuit with 1 is determined so as to resonate with the signal in the frequency band of the DCS system. When the parallel resonant circuit resonates, the impedance becomes very large. Therefore, the LPF 82 forms the attenuation pole AP1 near the DCS frequency band. As a result, the LPF 82
It has a transmission characteristic as shown in FIG. 2, and allows signals in the frequency band of the EGSM system to pass, but does not allow signals in the frequency band of the DCS system to pass.

Second inductor L2 in LPF 82
The constant of the series resonance circuit of the second capacitor C2 and the second capacitor C2 is determined so as to resonate with the signal in the UMTS frequency band. When the series circuit resonates, the impedance becomes very small and approaches zero. At this time, the impedance when the second terminal P2 is seen from the first terminal P1 becomes very large. Therefore, the LPF 82 does not pass signals in the UMTS frequency band. That is, the LPF 82 is U
The attenuation pole AP2 is formed near the frequency band of the MTS system.
As a result of the above, the LPF 82 has a transmission characteristic as shown in FIG. 2, and passes signals in the EGSM frequency band, but does not pass signals in the DCS and UMTS frequency bands. The impedance when the second terminal P2 is viewed from the first terminal P1 described above can be verified by applying resonance conditions and calculating.
The calculation method is publicly known, and therefore its explanation is omitted.

In FIG. 2, the pass characteristic of the frequency band of the EGSM system is shown in the conventional diplexer (see FIG. 21).
It is better than, and has a wider band (see the dotted line in FIG. 2). This is because the provision of two attenuation poles on the high band side improves the pass characteristic on the low band side.

FIG. 3 shows the HP in the diplexer of FIG.
It is a figure which shows the passage characteristic of F83. The function of the HPF 83 will be described below with reference to FIG. HPF8
The fourth inductor L4 and the fifth capacitor C in FIG.
The series resonance circuit of 5 and 5 has a constant set so as to resonate with a signal in the frequency band of the EGSM system. When the series resonance circuit resonates, the impedance approaches zero. When a signal in the EGSM frequency band is input to the first terminal P1, when the first terminal P1 to the third terminal P3 are viewed, H
The impedance of PF83 becomes very large. This fact can be verified by calculating the impedance between the first terminal P1 and the third terminal P3 and applying the resonance condition. The calculation method is publicly known, and therefore its explanation is omitted. That is, the HPF 83 forms the attenuation pole AP3 near the EGSM frequency band. As a result of the above, H
As shown in FIG. 3, the PF 83 uses DCS and UMTS.
A signal in the frequency band of the system is passed, but a signal in the frequency band of the EGSM system is not passed.

It should be noted here that the HP in the frequency band of the DCS and UMTS systems shown by the dotted line in FIG.
It is a transmission characteristic of F83. HPS 83 DCS and U
The transmission characteristics in the frequency band of the MTS method are the same as those of the conventional HP.
Compared with F (see the dotted line in FIG. 22), it extends over a wider band.
That is, as can be seen from the dotted line part in FIG.
In No. 3, good pass characteristics can be obtained even in the frequency band of the DCS system. This is because the LPF 82 forms two attenuation poles AP1 and AP2 in the vicinity of the pass band of the HPF 83, so that the signal in the vicinity of the pass band of the HPF 83 is the LPF 82.
This is because it is supplied to the HPF 83 side with almost no flow to the HPF 83 side. Therefore, the DC
Signals in the frequency bands of S and UMTS are conventional HPF
Since it will be supplied more than the HPF83
Will obtain good transmission characteristics in a wide band.

Next, the operation of the diplexer according to the first embodiment will be described. When a signal in the frequency band of the EGSM system enters from the first terminal P1, the series resonance circuit of the HPF 83 is in a resonance state, and therefore the first terminal P1 to the third terminal P1
The impedance when looking at the terminal P3 becomes extremely large. Therefore, the signal in the frequency band of the EGSM system that has entered the first terminal P1 is transmitted to the LPF 82 side, which has a much smaller impedance than the HPF 83, and can be taken out from the second terminal P2.

When a DCS frequency band signal is input from the first terminal P1, the first capacitor C1 of the LPF 82 is used.
Since the parallel resonance circuit constituted by the first inductor L1 and the first inductor L1 is in a resonance state, the impedance becomes very large, and as a result, the impedance when the second terminal P2 is seen from the first terminal P1 becomes very large. growing. Therefore, the signal in the frequency band of the DCS system, which is input from the first terminal P1, is not transmitted to the LPF 82 side, and the LPF 82 is not transmitted.
It is transmitted to the HPF 83 side, which has a much smaller impedance than that of, and can be taken out from the third terminal P3.

When a signal in the UMTS frequency band is input from the first terminal P1, the second capacitor C of the LPF 82 is used.
Since the series resonance circuit configured by the second inductor L2 and the second inductor L2 is in a resonance state, the impedance approaches zero, and the first capacitor C1 and the first inductor L1
The impedance of the parallel resonant circuit configured by is increased. As a result, the impedance when the second terminal P2 is seen from the first terminal P1 becomes very large. Therefore, the signal in the frequency band of the UMTS system that has entered from the first terminal P1 is not transmitted to the LPF 82 side, but the LPF 82
It is transmitted to the HPF 83 side, which has a much smaller impedance than that of, and can be taken out from the third terminal P3.

On the other hand, when a transmission signal of the EGSM system is input from the second terminal P2, the series resonance circuit of the HPF 83 is in a resonance state, and when the second terminal P2 to the third terminal P3 are seen, the impedance is very large. Therefore, the signal is
The signal is transmitted from the second terminal P2 to the first terminal P1.

When a DCS transmission signal is input from the third terminal P3, the parallel resonance circuit of the LPF 82 is in a resonance state, and the impedance when the second terminal P2 is viewed from the third terminal P3 becomes very large. Therefore, the signal is transmitted from the third terminal P3 to the first terminal P1. When a UMTS transmission signal is input from the third terminal P3, the LPF8
Since the serial resonance circuit of No. 2 is in a resonance state and the impedance when the second terminal P2 is seen from the third terminal P3 becomes very large, the signal goes from the third terminal P3 to the first terminal P1. introduce.

As described above, according to the diplexer of the first embodiment, the low pass filter LPF82 between the first terminal P1 and the second terminal P2 is the high pass filter H.
Near the pass band of PF83, two attenuation poles AP1 and AP
Since 2 is formed, it is possible to secure a sufficient amount of attenuation over a wide band. Therefore, the high-pass filter HPF83 between the first terminal P1 and the third terminal P3 can form a sufficiently wide band characteristic as compared with the conventional pass characteristic, so that the DCS and UMTS methods can be achieved. It is possible to provide a diplexer that can pass a signal in a high frequency band such as the above over a wide area without being attenuated.

Further, by configuring the low-pass filter LPF82 with two resonant circuits, that is, a parallel resonant circuit and a series resonant circuit, it becomes possible to provide a diplexer having a wide band pass characteristic with a minimum circuit configuration. .

In addition, the high pass filter HPF83 uses a single series resonance circuit to form the low pass filter LPF8.
The signal in the pass band on the second side is sufficiently attenuated. Therefore, it is possible to suppress the attenuation of signals in the low frequency band.

The third inductor L3 included in the low pass filter LPF82 according to the first embodiment is necessary for the configuration of the high frequency switch using the diplexer according to the first embodiment. The structure of the diplexer itself is not theoretically necessary.

In the low pass filter LPF82 according to the first embodiment, the parallel resonance circuit of the first inductor L1 and the first capacitor C1 forms the attenuation pole AP1 and the second inductor L2. Second capacitor C2
Although the configuration in which the attenuation pole AP2 is formed by the series resonance circuit of and is described as an example, separately, the attenuation pole AP2 is formed by the series resonance circuit of the second inductor L2 and the second capacitor C2.
The same effect can be obtained by forming 1 and forming the attenuation pole AP2 by the parallel resonance circuit of the first inductor L1 and the first capacitor C1.

The two resonance circuits in the low pass filter LPF82 according to the first embodiment may be two series resonance circuits or two parallel resonance circuits. In this case, the same effect can be obtained.

In the low-pass filter LPF82 of the diplexer according to the first embodiment, two attenuation poles are formed near the frequency band of the signal to be extracted by the high-pass filter HPF83. If the amount of signal attenuation is sufficient, it is not necessary to form an attenuation pole separately near the frequency band of the signal to be extracted. Figure 4
FIG. 4 is a diagram showing an example in which an attenuation pole of a low pass filter is provided in a portion other than a frequency band of a signal to be extracted. In FIG. 4, the attenuation pole of the low pass filter is provided near 3.0 GHz. At this time, the constants of the second inductor L2 and the second capacitor C2 of the series resonance circuit may be set so as to resonate near 3.0 GHz. As shown in FIG.
Attenuation pole AP4 of 3.0G near the DCS frequency band
By providing the attenuation pole AP5 near Hz, the UMT
It is possible to secure a sufficient amount of attenuation for signals in the frequency band of the S method, and further, in a wide area (about 1.7 GHz).
Up to about 3.3 GHz), it is possible to secure a sufficient amount of attenuation. Therefore, it becomes possible to provide a diplexer that allows a signal in a high frequency band to pass over a wider area without being attenuated.

Further, in the first embodiment, two resonance circuits are provided, but separately, three or more resonance circuits are provided in the low-pass filter, three or more attenuation poles are formed, and a wider range is obtained. You may make it ensure a sufficient amount of attenuation.

In the first embodiment, the EGS
Although the case where it is used in the combination of the three systems of M, DCS and UMTS has been described as an example, the combination of other systems, for example, EGSM, DCS and PCS (Personal Communications).
Similarly, in the combination of three systems (ns Services), DCS and PCS are also added to the LPF.
The diplexer may be used in a mobile phone in which three systems are combined by providing an attenuation pole in the frequency band of the system.

For example, EGSM, AMPS (A
advanced Mobile Phone Serv
The diplexer can be used in a mobile phone using four or more systems such as ice), DCS and PCS. In this case, the attenuation pole in the LPF may be formed so that the attenuation amount on the high band side can be secured over a wide range.

(Second Embodiment) A diplexer according to the second embodiment realizes an equivalent circuit of the diplexer according to the first embodiment with a laminated body in which a plurality of dielectric layers are stacked. FIG. 1 is also referred to in the second embodiment. FIG. 5 is an exploded perspective view showing a specific configuration of the diplexer according to the second embodiment. The diplexer according to the second embodiment is composed of dielectric layers N1 to N11. 6, FIG. 7, FIG. 8 and FIG. 9 are enlarged perspective views for explaining each dielectric layer of the diplexer shown in FIG. 5 in more detail. (A) to (l) described next to each dielectric layer in FIG. 5 correspond to (a) to (l) in FIGS. 6 to 9. The arrow shown in FIG. 5 means the stacking direction.

FIG. 6 is a diagram showing the dielectric layers N1 and N2 and the back surface Nb of the dielectric layer N1. FIG. 7 shows the dielectric layer N
It is a figure which shows 3-N5. FIG. 8 shows the dielectric layers N6 to N8.
FIG. FIG. 9 is a diagram showing the dielectric layers N9 to N11. With the dielectric layer N1 as the bottom layer, the dielectric layer N11
As the uppermost layer, the dielectric layers shown in FIGS. The number of laminated dielectric layers is appropriately selected according to the required characteristics of the diplexer.

First, a method of manufacturing a laminate for realizing the diplexer according to the second embodiment will be described. As the dielectric layer, a so-called glass ceramic substrate in which a low melting glass frit is mixed with a ceramic powder such as forsterite or a compound containing alumina as a main component is used. First, a green sheet formed by mixing the ceramic powder with an organic binder and an organic solvent to form a slurry, and punching a plurality of via holes for electrically connecting the multilayer wirings by mechanical punching or laser processing. .

Next, a conductive paste containing silver (or gold or copper) powder as a main component is printed on the green sheets to form wiring patterns, and the wiring patterns of the respective green sheets are interconnected. Similarly, a conductive paste is printed and filled in the via hole for forming a strip line and a capacitor electrode.

Next, the ten layers of green sheets obtained as described above are accurately aligned to obtain the dielectric layer N1.
The dielectric layers N11 are sequentially laminated, and heated and pressed under a certain condition to obtain an integrated laminated body. After this laminated body is dried, it is fired at 400 to 500 degrees in a firing furnace in an oxidizing atmosphere to burn out the organic binder in the green sheet. Next, when gold or silver powder was used as the main component of the conductor in normal air, and when copper powder was used in an inert gas or a reducing atmosphere, this laminate was formed. The final laminate is obtained by firing in the temperature range of about 850 to 950 degrees.

Next, the wiring pattern of each dielectric layer will be described with reference to FIGS. In FIG. 6, a plurality of electrodes T1 for surface-mounting the laminate on the main substrate are formed on the back surface Nb of the dielectric layer N1.
The electrode T1 is formed by printing and patterning the above-mentioned conductive paste. On the other hand, the ground electrode G1 is formed by printing on the upper surface of the dielectric layer N1. Further, the dielectric layer N1 is provided with via holes Va to Vk connected to the ground electrode G1 and via holes V1 to Vn not connected to the ground electrode. Hereinafter, in the dielectric layers N1 to N11, the same reference numerals are given to the via holes connected to each other. The capacitor electrode Cp1 is formed on the upper surface of the dielectric layer N2.
Are formed by printing, and the via holes V2 are punched.

In FIG. 7, on the upper surface of the dielectric layer N3,
A stripline electrode Lp1 is formed, and a via hole V3 is bored at one end of the stripline electrode Lp1. The via hole V3 is a capacitor electrode Cp.
It is perforated at a position where it connects with 1. In addition, the dielectric layer N
A stripline electrode Lp2 is formed on the upper surface of 3, and one end of the stripline electrode Lp2 is a via hole Vm.

A stripline electrode Lp3 is formed on the upper surface of the dielectric layer N4. A via hole V41 is formed at one end of the strip line electrode Lp3, and a via hole V42 is formed at the other end thereof. The via hole V41 is
It is connected to one end of the strip line electrode Lp1 opposite to the via hole V3. The via hole V42 is connected to one end of the strip line electrode Lp2 opposite to the via hole Vm. A ground electrode G2 is formed on the upper surface of the dielectric layer N5. The ground electrode G2 is connected to the via holes Va to e and Vk.

In FIG. 8, on the upper surface of the dielectric layer N6,
The capacitor electrode Cp2 is formed. Dielectric layer N7
A capacitor electrode Cp3 is formed on the upper surface of
A via hole V7 is drilled. The via hole V7 is
It is connected to the capacitor electrode Cp2 of the dielectric layer N6. Capacitor electrodes Cp4 and Cp5 are formed on the upper surface of the dielectric layer N8, and via holes V8 are bored. The via hole V8 is connected to the capacitor electrode Cp3 of the dielectric layer N7. Capacitor electrode Cp5
A via hole V42 is drilled at one end of the.

In FIG. 9, on the upper surface of the dielectric layer N9,
A capacitor electrode Cp6, a capacitor electrode Cp7, and an electrode T2 are formed. Further, the dielectric layer N9 has
A via hole V9 is drilled. The via hole V9 is
It is connected to the capacitor electrode Cp4 of the dielectric layer N8. A via hole Vl is bored at one end of the capacitor electrode Cp6. A via hole V8 is formed at one end of the capacitor electrode Cp7. The capacitor electrode Cp7 is connected to the capacitor electrode Cp3 of the dielectric layer N7 by the via hole V8. The via hole V is formed at one end of the electrode T2.
42 is perforated. The via hole V42 is connected to the capacitor electrode Cp5 of the dielectric layer N8. Also, the electrode T
A via hole Vn is drilled at one end of 2. The via hole Vn is connected to the electrode T1.

A spiral strip line electrode Lp4 and a strip line electrode Lp are formed on the upper surface of the dielectric layer N10.
And 5 are formed. A via hole V9 is formed at one end of the strip line electrode Lp4. The via hole V9 is connected to the capacitor electrode Cp4 of the dielectric layer N8. Further, at the other end of the strip line electrode Lp4,
A via hole V7 is drilled. The via hole V7 is
It is connected to the capacitor electrode Cp2 of the dielectric layer N6.

At one end of the strip line electrode Lp5,
A via hole V8 is drilled. The via hole V8 is
It is connected to the capacitor electrode Cp7 of the dielectric layer N9. Also, a via hole V42 is bored at the other end of the strip line electrode Lp5. The via hole V42 is connected to the electrode T2 of the dielectric layer N9.

With the above configuration, the inductor L1 of the LPF 82 is realized by the strip line electrode Lp5. The capacitor C1 has capacitor electrodes Cp5 and Cp7.
It is realized by. The inductor L2 is realized by the strip line electrodes Lp1 and Lp3. The capacitor C2 is realized by the capacitor electrode Cp1 and the ground electrode G1. The inductor L3 is a strip electrode L
It is realized by p2.

The capacitor C3 of the high pass filter HPF83 is realized by the capacitor electrodes Cp3 and Cp4. The capacitor C4 has capacitor electrodes Cp4 and Cp.
It is realized by 6 and. The inductor L4 is realized by the strip line electrode Lp4. Capacitor C5
Are realized by the capacitor electrode Cp2 and the ground electrode G2.

As described above, according to the diplexer according to the second embodiment, by realizing the diplexer as a laminated body by using the dielectric, it becomes possible to contribute to the miniaturization and the height reduction of the device. .

Next, the first wiring pattern described above is used.
The features of will be described. A dielectric layer N2 disposed above the dielectric layer N1 on which the ground electrode G1 is formed.
A capacitor electrode Cp1 is formed on the above, and stripline electrodes Lp1 and Lp3 are formed on the upper dielectric layers N3 and N4 to form a series resonance circuit of the LPF 82.

Usually, when a pattern such as a strip line electrode and a ground electrode overlap with each other, an unwanted stray capacitance is generated. Due to the generation of stray capacitance, the stacked circuit becomes a circuit different from the desired circuit diagram.
As a result, unnecessary resonance occurs, resulting in deterioration of characteristics. However, by disposing the capacitor electrode between the ground electrode and the stripline electrode as described above, it is possible to reduce the overlapping portion of the stripline electrode and the ground electrode, and thus the strip that constitutes the second inductor L2. Line electrodes Lp1 and Lp3
It is possible to reduce the stray capacitance generated between the ground electrode G1 and the ground electrode G1. Therefore, the circuit of the laminated body is as a desired circuit, and it becomes possible to ideally form a steep attenuation pole by the series resonance circuit of the second inductor L2 and the second capacitor C2, and the high frequency Pass filter HPF8
It is possible to broaden the pass band of No. 3 and to reduce the loss. The above is also applicable to the relationship between the first inductor L1, the first capacitor C1, and the ground electrode in the parallel resonant circuit of the LPF 82.

Further, the capacitor electrode Cp2 is formed on the dielectric layer N6 arranged above the dielectric layer N5 on which the ground electrode G2 is formed, and the strip line is formed on the dielectric layer N10 arranged further above. The electrode Lp4 is formed and constitutes a series resonance circuit of the HPF 83. By arranging in this way, it is possible to reduce the stray capacitance and the like that occur between the strip line electrode Lp4 forming the fourth inductor L4 and the ground electrode G2. Therefore, a steep attenuation pole can be formed by the series resonance circuit of the fourth inductor L4 and the fifth capacitor C5, so that the loss of the pass band of the low pass filter LPF82 can be reduced. .

That is, in the resonance circuit of the inductor and the capacitor forming the attenuation pole, the stripline electrode forming the inductor is arranged on the upper layer of the ground electrode and the capacitor electrode forming the capacitor, thereby making the attenuation pole steeper. Can be formed, and a low-pass filter and a high-pass filter with a wide band and low loss can be provided.

Next, the second wiring pattern described above is used.
The features of will be described. The stripline electrode Lp5 forming the inductor L1 in the LPF 82 is arranged in a layer above the ground electrode G1, and further, the stripline electrodes Lp1 and Lp3 forming the inductor L2 in the LPF 82 and the stripline electrode forming the inductor L4 in the HPF 83. It is arranged in the upper layer or the same layer with respect to Lp4 in the stacking direction. By arranging in this way, it becomes possible to reduce the stray capacitance generated between the strip line electrode forming the inductor L1 in the LPF 82 and the ground electrode or another electrode pattern. Therefore, the LP through which the signal passes directly
It is possible to reduce the characteristic change of the inductor L1 in F82, and it is possible to provide a diplexer having a desired circuit.

That is, the stripline electrode forming the inductor through which the signal directly passes in the LPF is arranged in a layer above the ground electrode, and the stripline electrode forming the other inductor in the LPF and the inductor in the HPF are formed. By providing in the upper layer or the same layer for the stripline electrode to
In the LPF, it is possible to reduce the stray capacitance generated between the strip line electrode forming the inductor through which the signal directly passes and the ground electrode or another electrode pattern. Therefore, it is possible to reduce the change in the characteristics of the inductor through which the signal directly passes, and it is possible to provide the diplexer as the desired circuit.

Further, since the input / output terminal and the ground electrode of the diplexer according to the second embodiment are all gathered on the back surface of the dielectric layer N1 through the via holes, they are not mounted on the main board of the electronic device. It is possible to keep the mounting area small.

Note that the wiring of the electrodes as shown in FIG. 5 is an example, and it is not necessary to use such wiring. For example, here, the inductor L1 of the LPF 82 is realized by one stripline electrode Lp5, but it may be realized by a plurality of stripline electrodes. The other inductors are also realized by at least one strip line electrode.
In any case, any wiring having the above-described characteristics will have the effects of the present invention.

(Third Embodiment) A high frequency switch according to a third embodiment is a high frequency switch using the diplexer according to the first embodiment, and is realized by a laminated body in which a plurality of dielectric layers are stacked. To do. FIG. 1 is also referred to in the third embodiment, and portions having the same function are designated by the same reference numeral to simplify the description.

FIG. 10 is a block diagram showing the functional configuration of the high frequency switch according to the third embodiment. Figure 10
In the high frequency switch 80, the first frequency band (E
GSM), a second frequency band (DCS) and a third frequency band (UMTS), and a triple-band high-frequency switch having a filter function of passing a transmission frequency band and a reception frequency band, respectively, comprising a switch circuit ( A transmission / reception switching circuit) 84, a switch circuit 85, a diplexer 81, band pass filters 86 and 89, low pass filters 87 and 88, and a duplexer 90.

A bandpass filter 86 is connected to the EGSM signal reception terminal Rx1. EGSM
The low-pass filter 8 is provided at the transmission terminal Tx1 for the system signal.
7 is connected. DCS signal transmission terminal Tx
A low-pass filter 88 is connected to 2. DC
A bandpass filter 89 is connected to the reception terminal Rx2 for the S-system signal. A duplexer 90 is connected to the transmission terminal Tx3 and the reception terminal Rx3 of the UMTS signal.

Bandpass filter 86 and switch circuit 84
Are connected by an internal terminal 93. The low pass filter 87 and the switch circuit 84 are connected by the internal terminal 94. The switch circuit 84 is connected to the LPF 82 of the diplexer 81 by the internal terminal 91.

Low pass filter 88 and switch circuit 85
Are connected by an internal terminal 95. The bandpass filter 89 and the switch circuit 85 are connected by the internal terminal 96. Also, the duplexer 90
The switch circuit 85 and the switch circuit 85 are connected by an internal terminal 97. The switch circuit 85 is connected to the HPF 83 of the diplexer 81 by the internal terminal 92.
An antenna ANT is connected to the diplexer 81.

The band pass filter 86 is an SA that passes only signals in the frequency band corresponding to the received signal of the EGSM system.
It is a bandpass filter using a W filter or the like. The low-pass filter 87 is a filter that passes a signal in a frequency band equal to or lower than the frequency band corresponding to the EGSM transmission signal, and is provided to reduce harmonic distortion due to amplification. The bandpass filter 89 is a bandpass filter that uses a SAW filter or the like that passes only signals in the frequency band corresponding to the DCS reception signal. The low-pass filter 88 is a filter that passes a signal in a frequency band equal to or lower than a frequency band corresponding to a DCS transmission signal, and is provided to reduce harmonic distortion due to amplification.

The duplexer 90 is composed of a dielectric or the like which separates the transmission frequency band from the reception frequency band,
For example, it includes a bandpass filter connected to the transmission terminal Tx3 and a bandpass filter connected to the reception terminal Rx3. In the UMTS system, since transmission and reception are performed at the same time, the duplexer 90 is used to protect the reception signal from the transmission signal.

The switch circuit 84 switches the transmission signal in the EGSM frequency band to the internal terminal 93 and the reception signal to the internal terminal 94. The switch circuit 84 switches the internal terminal according to the applied voltage (3V) to the control terminal Vc1. When the voltage is applied, the switch circuit 84 switches to the internal terminal 94 so that the signal can be transmitted.

The switch circuit 85 transmits the DCS frequency band transmission signal to the internal terminal 95 and the reception signal to the internal terminal 9
6, the signal in the UMTS frequency band is switched to the internal terminal 97. The switch circuit 85 has a control terminal V
Switching is performed according to the applied voltage (3 V) to c2 and Vc3. When the voltage is applied to the control terminal Vc2, the switch circuit 85 switches to the internal terminal 95 so as to transmit the DCS system signal, and when the voltage is applied to the control terminal Vc3, the switch circuit 85 receives the DCS system signal. To the internal terminal 96. Further, the switch circuit 85 switches to the internal terminal 97 so as to transmit / receive a UMTS system signal when a voltage is not applied to the control terminals Vc2 and Vc3.

Next, the operation of the high frequency switch 80 configured as described above will be described. The operation of the diplexer 81 has been described in detail in the first embodiment, and will be omitted. When transmitting the EGSM system signal, 3V is applied to the control terminal Vc1 of the switch circuit 84.
Is applied to control terminal Vc2 of switch circuit 85.
And 0 V is applied to Vc3. As a result, the internal terminal 91 and the internal terminal 94 are connected. The EGSM transmission signal is input from the transmission terminal Tx1, reduced in harmonic distortion by the low pass filter 87, transmitted to the LPF 82 of the diplexer 81 via the switch circuit 84, passes through the LPF 82, It is output from the antenna ANT.

When receiving signals of the EGSM system, the control terminals Vc1 to Vc of the switch circuits 84 and 85 are used.
0V is applied to c3, and the internal terminals 91 and 93 are connected. The EGSM received signal is supplied from the antenna ANT to the diplexer 81. The EGSM received signal supplied to the diplexer 81 is the HPF.
It passes through the LPF 82 without passing through 83, and is transmitted to the bandpass filter 86 via the switch circuit 84. The band pass filter 86 passes only the necessary band of the received signal and sends it to the receiving terminal Rx2. In this way, the reception signal of the EGSM system is taken out from the reception terminal Rx2.

When transmitting a DCS system signal, 3V is applied to the control terminal Vc2 of the switch circuit 85,
0V is applied to the control terminal Vc1 of the switch circuit 84 and the control terminal Vc3 of the switch circuit 85. As a result, the internal terminals 92 and 95 are connected. The DCS transmission signal is transmitted through the transmission terminal Tx.
2 is input to the HPF 83 of the diplexer 81 via the switch circuit 85, the harmonic distortion is reduced by the low-pass filter 88, the HPF 83 is passed, and the output is output from the antenna ANT.

When the DCS system signal is received, 3V is applied to the control terminal Vc3 of the switch circuit 85,
0V is applied to the control terminal Vc1 of the switch circuit 84 and the control terminal Vc2 of the switch circuit 85. As a result, the internal terminals 92 and 96 are connected. The DCS reception signal is supplied from the antenna to the diplexer 81. The DCS reception signal supplied to the diplexer 81 passes through the HPF 83 without passing through the LPF 82, and is transmitted to the bandpass filter 89 via the switch circuit 85. The bandpass filter 89 passes only the necessary band of the received signal and sends it to the receiving terminal Rx2. In this way, the DCS reception signal is extracted from the reception terminal Rx2.

When transmitting a UMTS signal, 0V is applied to the control terminals Vc1 to Vc3 of the switch circuit 84 and the switch circuit 85. As a result, the internal terminal 92 and the internal terminal 97 are connected. UMT
The S-system transmission signal is input from the transmission terminal Tx3, and is transmitted to the duplexer 90, the switch circuit 85, and the diplexer 81.
Is output from the antenna ANT via. When receiving a UMTS signal, the same connection state as above is set. The reception signal of the UMTS system is transmitted from the antenna ANT to the diplexer 81, the switch circuit 85, and the duplexer 90.
Is sent to the reception terminal Rx3 and taken out.

FIG. 11 is a diagram showing a part of the circuit of the high frequency switch 80 according to the third embodiment. FIG. 11 shows a circuit of the high frequency switch 80 when a diode is used. In FIG. 11, the band pass filter 86, the band pass filter 89 and the duplexer 90 are shown.
Although the circuit is omitted, each general circuit may be provided before the transmission terminals Rx1, Rx2 and Tx3 & Rx3. The circuit of the diplexer 81 is the same as that of the first embodiment.

The transmission terminal Tx1 is connected to the antenna side through the diode D2 which is in the forward direction when transmitting. The low pass filter 87 is inserted between the transmission terminal Tx1 and the anode of the diode D2. Further, the reception terminal Rx1 is connected to the antenna side and is grounded via the forward diode D4. The control terminal Vc1 is connected to a control unit (not shown) for the applied voltage.

The transmission terminal Tx2 is connected to the antenna side through the diode D3 which is in the forward direction when transmitting. The low pass filter 88 is inserted between the transmission terminal Tx2 and the anode of the diode D3. Further, the reception terminal Rx2 is connected to the antenna side through a diode D1 that is in the reverse direction (off state) when transmitting is performed using the transmission terminal Tx2.

The transmission terminal Tx3 and the reception terminal Rx3 are connected to the antenna side and grounded via the diode D5 in the forward direction. Also, control terminals Vc2, V
c3 is connected to a control unit (not shown) for the applied voltage.

The operation of part of the circuit of the high frequency switch shown in FIG. 11 will be described below. Since the circuits of the low pass filters 87 and 88 and the circuits of the switch circuits 84 and 85 are known circuits, their operation will be briefly described. The description of the operation of the circuit of the diplexer 81 is the same as that of the first embodiment, and will not be repeated.

The EGSM transmission signal input to the transmission terminal Tx1 is supplied to the low pass filter 87. The parallel resonance circuit of the low-pass filter resonates with the harmonics of the signal, and only the fundamental wave of the signal is switched by the switch circuit 84.
Communicate to. When transmitting a signal of the EGSM system, since the voltage of 3V is applied to the control terminal Vc1, the diode D2 is turned on. Therefore,
The transmission signal passes through the diode D2. EGSM
With respect to the transmission frequency band of the system, the impedance of the cathode side of the diode D2 becomes very large due to the action of the quarter-wave 50Ω line 841 of the frequency.
The signal is sent to the diplexer 81.
Then, the signal is output from the antenna ANT via the diplexer 81.

The reception signal of the EGSM system is obtained by the antenna AN.
The signal is transmitted from T to the switch circuit 84 via the diplexer 81. When a signal of the EGSM system is received, since a voltage of 0 V is applied to the control terminal Vc1, the diode D2 functions as a capacitor due to the capacitance between the terminals, and forms a parallel resonance circuit with the inductor L84. The parallel resonant circuit is set with a constant so as to resonate in the reception frequency band of the EGSM system. When the parallel resonant circuit resonates, the impedance becomes very large, so that the received signal is transmitted to the receiving terminal Rx1.

When transmitting a DCS system signal from the transmission terminal Tx2, a voltage of 3 V is applied to the control terminal Vc2. Since the circuit configuration around the diode D3 is similar to the circuit configuration around the diode D2, the transmission signal is sent to the diplexer 81 by the same operation as when transmitting the EGSM system signal from the transmission terminal Tx1.

When the DCS system signal is received, 3V is applied to the control terminal Vc3 and the control terminal Vc3 is applied.
0V is applied to c2. As a result, the diode D1 is turned on, and the impedance of the parallel resonant circuit formed by the inter-terminal capacitance of the diode D3 becomes extremely large. In addition, a quarter wavelength of the transmission frequency band of the DCS system 5
Due to the action of the 0Ω line 851, the impedance on the anode side of the diode D5 also becomes very large. As a result, the DCS reception signal is transmitted to the reception terminal Rx2.

When transmitting a UMTS signal from the transmitting terminal Tx3, 0 V is applied to the control terminals Vc2 and Vc3.
Is applied to the diodes D1 and D3.
Form a parallel resonant circuit by the capacitance between the terminals.
The impedance of these two parallel resonant circuits becomes very large, and the UMTS transmission signal is transmitted by the diplexer 8
1 will be output to the antenna ANT. The switch circuit 85 operates similarly for the reception signal of the UMTS system.

FIG. 12 is an exploded perspective view of a laminated body in which the circuit of the high frequency switch shown in FIG. 11 is realized by stacking a plurality of dielectric layers. In FIG. 12, among the components shown in FIG. 11, the transmission terminals Tx1, Tx2, Tx3 are included.
& Rx3 and the capacitors shown at the input / output ends of the receiving terminals Rx1 and Rx2 and the capacitors inserted between the control terminals Vc1 to Vc3 and the ground are not included in the wiring pattern of the dielectric layer and the parts on the upper surface of the laminated body. Not included.

As shown in FIG. 12, the laminated body of the high-frequency switch is composed of fifteen dielectric layers N101 to N115. 13, 14, 15, and 16
FIG. 13 is an enlarged perspective view of each dielectric layer of the high frequency switch shown in FIG. 12. (A) to (p) shown next to each dielectric layer in FIG. 12 correspond to (a) to (p) in FIGS. The arrow shown in FIG. 12 means the stacking direction.

FIG. 13 is a diagram showing the back surfaces N101b of the dielectric layers N101 to N103 and the dielectric layer N101. FIG. 14 is a diagram showing the dielectric layers N104 to N107. FIG. 15 is a diagram showing the dielectric layers N108 to N111. FIG. 16 is a diagram showing the dielectric layers N112 to N115. With the dielectric layer N101 as the bottom layer, the dielectric layer N
The dielectric layers shown in FIGS. 13 to 16 overlap with each other with 115 as the uppermost layer. In FIG. 16, 5 is formed on the upper surface of the uppermost dielectric layer N115 in the laminated body of the high frequency switches.
The individual diodes D1 to D5 and a plurality of chip components SD1 such as capacitors and resistors which are not patterned on the surface of other dielectric layers are electrically connected to the internal circuit of the laminate. Note that the number of laminated dielectric layers is appropriately selected depending on the required characteristics of the high frequency switch. The method of forming the dielectric layer and the laminated body is the same as that of the second embodiment, and therefore the description is omitted.

In FIG. 13, on the back surface N101b of the dielectric layer N101, a plurality of electrodes T102 for surface-mounting the high-frequency switch on the main board of the electronic device are formed. The electrodes T102 are formed by printing and patterning a conductive paste as shown in the second embodiment.

Hereinafter, the laminated structure of the wiring pattern of the high frequency switch having the multilayer structure as shown in FIGS. 13 to 16 will be described focusing on the diplexer 81. The dielectric layers N101 and N107 have a ground electrode G101,
G102 is formed by printing or the like (see FIGS. 13 and 14). Capacitor electrodes Cp11 to Cp17 are formed on the upper surfaces of the dielectric layers N102 and N108 to N111 by printing or the like (see FIGS. 13 and 15). Further, strip line electrodes Lp11 to Lp15 are formed on the dielectric layers N105, N106, N113 by printing or the like (see FIGS. 14 and 16).

Further, the dielectric layers N102 to N113 include
A plurality of via holes for electrically connecting the strip line electrodes Lp11 to Lp15 and the capacitor electrodes Cp11 to Cp17 so as to correspond to the circuit diagram shown in FIG. 11 are appropriately provided. For example, the strip line electrode Lp15 is connected to the capacitor electrode Cp17 by the via hole V11. Further, the strip line electrode Lp14 is connected to the capacitor electrode Cp12 through the via hole V12.

With the above configuration, the stripline electrodes Lp11 to Lp13 and Lp15 are inductors of the LPF 82 and the capacitor electrodes Cp11, Cp15, Cp1.
7 and the ground electrode G101 form a capacitor of the LPF 82, and as a result, the LPF 82 is formed.

Further, the strip line electrode Lp14 is set to H.
The inductor of PF83 is connected to the capacitor electrodes Cp12 to Cp.
The p14, Cp16 and the ground electrode G102 form a capacitor of the HPF83, and as a result, the HPF83 is formed.

The strip line electrode, the capacitor electrode and the ground electrode for forming the LPF 82 and the HPF 83 are arranged so as to have the same characteristics as those described in the second embodiment. As a result, the diplexer 81
Can obtain the same effect as that of the second embodiment.

Similarly, the low pass filters 87 and 88 are also formed by a combination of strip line electrodes, capacitor electrodes, and ground electrodes patterned on the dielectric layer forming the laminate.

Further, the inductors and capacitors of the switch circuits 84 and 85 are also formed by the combination of strip line electrodes, capacitor electrodes and ground electrodes patterned on the dielectric layer. In addition, the inductors and capacitors of the switch circuits 84 and 85 formed as described above, the diodes D1 to D5 and the plurality of chip components SD1 mounted on the upper surface of the stack are connected to the plurality of electrodes T101 (in FIG. 16, Switch circuits 84 and 85 are realized by electrically connecting via two electrodes (T101 are shown as a representative). Further, inside the laminated body, the diplexer 81 receives the switch circuit 8 through the internal terminals 91 and 92.
4, 85.

Further, the bandpass filter 8 shown in FIG.
6, 89 and the duplexer 90 are the reception terminals Rx1, Rx2 and the transmission / reception terminal Tx3 & of the switch circuit configured by the laminated body on the main board of the electronic device.
It will be electrically connected to Rx3.

As described above, according to the third embodiment, by realizing the high frequency switch as a laminated body by using the dielectric, it is possible to contribute to the miniaturization and the height reduction of the device. Further, by using the diplexer of the first embodiment, it is possible to provide a high frequency switch that allows a signal in a high frequency band to pass over a wide range without being attenuated.

Further, since the input / output terminals and the ground electrode of the high frequency switch are all gathered on the back surface of the laminated body through the via holes, it is possible to reduce the mounting area when mounting on the main board of the electronic device. become.

In the third embodiment described above, EGS is used.
The case where it is used in the combination of three systems of M, DCS, and UMTS has been described as an example, but the combination of other systems, for example, EGSM, DCS, P.
A combination of CS methods and the like can be used as well.

In the third embodiment, the triple band high frequency switch using the three communication systems has been described as an example. However, by changing the configuration of the switch circuit, the two communication systems (for example, EGSM and UM
Dual band high frequency switch using TS) or four or more systems (eg EGSM, AMP)
The same effect can be obtained in the case of a high frequency switch using S, DCS, PCS).

In the third embodiment, the bandpass filter and the duplexer are provided on the main board of the electronic device, and the receiving terminal Rx of the switch circuit formed in the laminated body is provided.
1, Rx2 and the transmission / reception terminals Tx3 & Rx3 are electrically connected, but a bandpass filter may be separately mounted on the upper surface of the laminated body. FIG. 17: is a figure which shows the time of mounting a bandpass filter on the upper surface of a laminated body. FIG. 17
As shown in, SA used as a bandpass filter
The W filters SF1 and SF2 are connected to the diodes D11 to D11.
D15 and chip parts SD11 such as capacitors and resistors
Even if it mounts on the upper surface of the laminated body 11 similarly to SD17, the same effect is obtained.

The same effect can be obtained by mounting the duplexer on the upper surface of the laminated body or by mounting both the bandpass filter and the duplexer on the laminated body.

In the third embodiment, the diode is used as the switch circuit, but separately,
The same effect can be obtained by using a GaAs (gallium arsenide) switch using gallium arsenide as a semiconductor only in one of the switch circuits or using a GaAs switch as both switch circuits.

(Fourth Embodiment) In the fourth embodiment,
An antenna duplexer using the diplexer according to the first embodiment will be described. FIG. 1 is also referred to in the fourth embodiment, and the portions having the same functions are designated by the same reference numerals and the description thereof will be omitted.

FIG. 18 is a block diagram showing the configuration of the antenna duplexer 100 according to the fourth embodiment. In FIG. 18, the antenna duplexer 100 is a diplexer 81.
And a first duplexer 101 and a second duplexer 102. The antenna duplexer 100 transmits / receives IS-95 and PCS signals via the antenna ANT.

In the IS-95 system, the transmission band is 82
4-849MHz, 869-894MH as receiving band
Use z. In the PCS method, the transmission band is 192
0 to 1980 MHz, reception band is 2110 to 217
Use 0 MHz. LPF in the diplexer 81
In 82, the reception band 2110-2 used by the PCS system
One attenuation pole is constructed at 170MHz, and transmission band 192
Inductors L1 and L2 and capacitors C1 and C2 so as to form another attenuation pole at 0 to 1980 MHz.
The value of is set. Which side of the series resonance circuit and the parallel resonance circuit the attenuation pole is formed in is arbitrary. On the other hand, in the HPF 83 of the diplexer 81, the band 824 to 894 MH used by the IS-95 system is used.
The values of the inductor L4 and the capacitor C5 are set so that z forms one attenuation pole.

The first duplexer 101 is IS-95.
It is composed of a dielectric or the like that separates the transmission frequency band and the reception frequency band in the system, and includes, for example, a bandpass filter connected to the transmission terminal Tx4 and a bandpass filter connected to the reception terminal Rx4. I
In the S-95 system, transmission and reception are performed simultaneously, so that the first duplexer 101 is used to protect the received signal from the transmitted signal.

The second duplexer 102 is composed of a dielectric or the like which separates the transmission frequency band and the reception frequency band in the PCS system from each other. For example, the transmission terminal T
bandpass filter connected to x5 and receiving terminal Rx
5 and a bandpass filter connected to 5. PCS
Also in the method, since the transmission and reception are performed at the same time, the second duplexer 102 is used to protect the reception signal from the transmission signal.

Next, the operation of the antenna duplexer 100 will be described with reference to FIG. Antenna duplexer 1
If an IS-95 received signal is input to 00, H
Since the impedance of the PF83 becomes high, the received signal is transmitted to the LPF82 side, and the first duplexer 1
01 is supplied. The first duplexer 101 does not transmit the reception signal to the transmission terminal Tx4, but receives the reception terminal Rx.
Output from x4. On the other hand, when transmitting a signal of the IS-95 system, the signal is transmitted via the transmission terminal Tx4 to the first
Is input to the duplexer 101. The first duplexer 101 inputs the input signal to the LPF 82 without transmitting it to the reception terminal Rx4. Since the HPF 83 has a high impedance with respect to the IS-95 type signal, the IS-95 type transmission signal is output from the antenna ANT.

When a reception signal of the PCS system is input to the antenna duplexer 100, the LPF 82 has a high impedance, so that the reception signal is transmitted to the HPF 83 side and input to the second duplexer 102. The second duplexer 102 outputs the reception signal from the reception terminal Rx5 without transmitting the reception signal to the transmission terminal Tx5. On the other hand, P
When transmitting a signal of the CS method, the signal is input to the second duplexer 102 via the transmission terminal Tx5. The second duplexer 102 inputs the input signal to the HPF 83 without transmitting it to the reception terminal Rx5. Since the LPF 82 has a high impedance with respect to the PCS transmission signal, the PCS transmission signal is
It will be output from the antenna ANT.

As described above, when the antenna duplexer according to the fourth embodiment is used, even in the communication system using the IS-95 system and the PCS system, the signal in the high frequency band is attenuated over a wide area. It is possible to pass without. In the PCS system, the transmission band and the reception band are considerably separated from each other. Therefore, it is extremely effective to use the diplexer having the two attenuation poles with the LPF as in the present invention.

By using the high frequency switch or the antenna duplexer described in the third and fourth embodiments, it is possible to provide a wireless communication device capable of transmitting and receiving a signal of a communication method using a plurality of frequency bands. It is possible to

[Brief description of drawings]

FIG. 1 is a diagram showing an equivalent circuit of a diplexer according to a first embodiment of the present invention.

FIG. 2 is a diagram showing a pass characteristic of an LPF 82 in the diplexer of FIG.

FIG. 3 is a diagram showing a pass characteristic of an HPF 83 in the diplexer of FIG.

FIG. 4 is a diagram showing an example in which an attenuation pole of a low pass filter is provided in a portion other than a frequency band of a signal to be extracted.

FIG. 5 is an exploded perspective view showing a specific configuration of the diplexer according to the second embodiment.

FIG. 6 is a diagram showing dielectric layers N1 and N2 and a back surface Nb of dielectric layer N1.

FIG. 7 is a diagram showing dielectric layers N3 to N5.

FIG. 8 is a diagram showing dielectric layers N6 to N8.

FIG. 9 is a diagram showing dielectric layers N9 to N11.

FIG. 10 is a block diagram showing a functional configuration of a high frequency switch according to a third embodiment.

FIG. 11 is a diagram showing a part of a circuit of a high frequency switch 80 according to a third embodiment.

12 is an exploded perspective view of a laminated body in which the circuit of the high-frequency switch shown in FIG. 11 is realized by stacking a plurality of dielectric layers.

FIG. 13 is a diagram showing back surfaces N101b of dielectric layers N101 to N103 and dielectric layer N101.

FIG. 14 is a diagram showing dielectric layers N104 to N107.

FIG. 15 is a diagram showing dielectric layers N108 to N111.

FIG. 16 is a diagram showing dielectric layers N112 to N115.

FIG. 17 is a view showing a case where the bandpass filter is mounted on the upper surface of the laminated body.

FIG. 18 is an antenna duplexer 100 according to a fourth embodiment.
3 is a block diagram showing the configuration of FIG.

FIG. 19 is a diagram showing frequency bands used in the EGSM system, the DCS system, and the UMTS system.

FIG. 20 is a diagram showing an equivalent circuit of a conventional diplexer.

FIG. 21 is a diagram showing a pass characteristic of the LPF 10.

FIG. 22 is a diagram showing a pass characteristic of the HPF 20.

[Explanation of symbols]

80 high frequency switch 81 diplexer 82,87,88 low pass filter 83 high pass filter 84,85 switch circuit 86,89 band pass filter 90 duplexer 100 antenna duplexer 101 first duplexer 102 second duplexer 91 to 97 inside Terminals C1 to C5 Capacitors L1 to L4, L84 Inductors P1 to P3 Terminals Vc1 to Vc3 Control terminals Tx1 to Tx5 Transmission terminals Rx1 to Rx5 Reception terminals D1 to D5, D11 to D15 Diodes 841, 851 Quarter wavelength 50Ω line N1 N11, N101 to N115 Dielectric layer Nb Back surface N101b of dielectric layer N1 Back surface G1, G2, G101, G102 of dielectric layer N101 Ground electrodes Cp1 to Cp7, Cp11 to Cp17 Capacitor electrodes Lp1 to Lp5, Lp1 ~Lp15 stripline T1, T2, T101, T102 electrodes Va~Vn, V2, V3, V41, V42, V7, V
8, V9, V11, V12 Via holes SD1, SD11 to SD17 Chip parts SF1, SF2 SAW filters AP1 to AP5 Attenuation poles

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Toshio Ishizaki             1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric             Sangyo Co., Ltd. F-term (reference) 5J024 AA01 BA11 CA02 CA03 CA09                       CA10 DA04 DA29 EA01 EA02                       KA03                 5K011 BA03 DA02 DA22 FA01 JA01                       KA08

Claims (28)

[Claims] 1. A diplexer for transmitting and receiving radio waves in different frequency bands, separating and combining the radio waves, and a second terminal for transmitting and receiving a signal in a low frequency band with a first terminal connected to the antenna side. A low-pass filter that passes only signals in the low-frequency band disposed between the first terminal and a third terminal for transmitting and receiving signals in the high-frequency band. And a high-pass filter that passes only a signal in a high-frequency band disposed between the low-pass filter and the low-pass filter. A diplexer characterized by forming at least two. 2. The high-pass filter includes one resonance circuit, the high-pass filter forms one attenuation pole on a low-pass side of a pass band, and the low-pass filter is the lowest. The diplexer according to claim 1, wherein only a signal in a frequency band in the range is passed. 3. The low-pass filter includes, as the two resonance circuits, a parallel configuration including a first inductor and a first capacitor arranged between the first terminal and the second terminal. The diplexer according to claim 1 or 2, including a resonance circuit and a series resonance circuit including a second inductor and a second capacitor arranged between the second terminal and the ground. 4. The high-pass filter, a series circuit composed of a third capacitor and a fourth capacitor arranged between the first terminal and the third terminal, as the resonance circuit, The third capacitor and the fourth
The diplexer according to claim 3, further comprising: a series resonance circuit including a third inductor and a fifth capacitor arranged between a connection point with the capacitor and the ground. 5. The low-pass filter and the high-pass filter include a plurality of stripline electrodes for realizing the first to third inductors and a plurality of stripline electrodes for realizing the first to fifth capacitors. And a plurality of dielectric layers forming a plurality of via-hole conductors for connecting the plurality of stripline electrodes and the plurality of capacitor electrodes to each other. The diplexer according to claim 4. 6. At least one dielectric layer of the plurality of dielectric layers includes a ground electrode, and at least one stripline electrode for realizing the first inductor is laminated more than the ground electrode. With respect to the stacking direction, the stacking direction being higher than that of the at least one stripline electrode that realizes the second inductor and the at least one stripline electrode that realizes the third inductor. The diplexer according to claim 5, wherein the diplexer is arranged in the upper layer or the same layer. 7. At least one dielectric layer of the plurality of dielectric layers includes a ground electrode, and a first dielectric layer of the parallel resonant circuit of the low pass filter.
At least one capacitor electrode that realizes the capacitor is disposed above the ground electrode in the stacking direction, and at least one that realizes the first inductor in the parallel resonant circuit of the low-pass filter. 7. The diplexer according to claim 5, wherein the stripline electrodes of one or more are arranged in a layer above the capacitor electrode in the stacking direction. 8. At least one dielectric layer of the plurality of dielectric layers includes a ground electrode, and a second electrode in the series resonant circuit of the low pass filter.
At least one capacitor electrode that realizes the capacitor is disposed above the ground electrode in the stacking direction, and at least one capacitor electrode that realizes the second inductor in the series resonance circuit of the low-pass filter. The diplexer according to any one of claims 5 to 7, characterized in that the stripline electrodes (1 or more) are arranged in a layer above the capacitor electrodes in the stacking direction. 9. The at least one dielectric layer of the plurality of dielectric layers includes a ground electrode, and a fifth electrode in the series resonance circuit of the high pass filter.
At least one capacitor electrode that realizes the capacitor is disposed above the ground electrode in the stacking direction, and at least one capacitor that realizes the third inductor in the series resonance circuit of the high-pass filter. The diplexer according to any one of claims 5 to 8, wherein the stripline electrodes of one or more are arranged in a layer above the capacitor electrode in the stacking direction. 10. A high-frequency switch for switching between transmission and reception of radio waves of different frequency bands, wherein radio waves of different frequency bands are transmitted and received via a first terminal connected to the antenna side and separated. A diplexer for synthesizing, a low frequency transmission / reception switching circuit connected to a second terminal for transmitting / receiving a low frequency signal in the diplexer, and for transmitting / receiving a high frequency signal in the diplexer A high frequency transmission / reception switching circuit connected to a third terminal, wherein the diplexer passes only a signal in a low frequency band arranged between the first terminal and the second terminal. A low-pass filter; and a high-pass filter that passes only a signal in a high-frequency band that is arranged between the first terminal and the third terminal, The low pass filter has at least two resonance circuits, the low pass filter is characterized in that at least two attenuation poles are formed on the high frequency side of the pass band by the action of the two resonance circuits. High frequency switch. 11. The high pass filter includes one resonance circuit, the high pass filter forms one attenuation pole on a low pass side of a pass band, and the low pass filter has the lowest The high frequency switch according to claim 10, wherein only a signal in a frequency band in the range is passed. 12. The low pass filter is a parallel circuit including a first inductor and a first capacitor arranged between the first terminal and the second terminal as the two resonance circuits. The high frequency switch according to claim 10 or 11, comprising a resonance circuit and a series resonance circuit including a second inductor and a second capacitor arranged between the second terminal and the ground. 13. The high-pass filter, a series circuit comprising a third capacitor and a fourth capacitor arranged between the first terminal and the third terminal, and as the resonance circuit, The third capacitor and the fourth
13. The high-frequency switch according to claim 12, further comprising: a series resonance circuit including a third inductor and a fifth capacitor, the series resonance circuit being disposed between a connection point with the capacitor and the ground. 14. A plurality of strip line electrodes for realizing an inductor, a plurality of capacitor electrodes for realizing a capacitor, and a plurality of via hole conductors for connecting the plurality of strip line electrodes and the plurality of capacitor electrodes. The high frequency switch according to claim 13, which is realized by a laminated body of a plurality of formed dielectric layers. 15. The plurality of stripline electrodes for realizing the first to third inductors for realizing the low-pass filter and the high-pass filter, and the first to fifth electrodes in the laminated body. 15. A plurality of capacitor electrodes for realizing the capacitor of claim 1, and a plurality of via-hole conductors connecting the plurality of strip line electrodes and the plurality of capacitor electrodes are formed.
High frequency switch described in. 16. At least one dielectric layer of the plurality of dielectric layers includes a ground electrode, and at least one stripline electrode that realizes the first inductor is laminated more than the ground electrode. With respect to the stacking direction, the stacking direction being higher than that of the at least one stripline electrode that realizes the second inductor and the at least one stripline electrode that realizes the third inductor. 16. The upper layer and the same layer are arranged in the same layer.
High frequency switch described in. 17. At least one dielectric layer of the plurality of dielectric layers includes a ground electrode, and a first dielectric layer in the parallel resonant circuit of the low pass filter.
At least one capacitor electrode that realizes the capacitor is disposed above the ground electrode in the stacking direction, and at least one that realizes the first inductor in the parallel resonant circuit of the low-pass filter. The high-frequency switch according to claim 15 or 16, characterized in that the stripline electrodes (1 or more) are arranged in a layer above the capacitor electrode in the stacking direction. 18. At least one dielectric layer of the plurality of dielectric layers includes a ground electrode, and a second electrode in the series resonance circuit of the low pass filter.
At least one capacitor electrode that realizes the capacitor is disposed above the ground electrode in the stacking direction, and at least one capacitor electrode that realizes the second inductor in the series resonance circuit of the low-pass filter. 18. The high-frequency switch according to claim 15, wherein the stripline electrodes of one or more are arranged in a layer above the capacitor electrode in the stacking direction. 19. At least one dielectric layer among the plurality of dielectric layers includes a ground electrode, and a fifth electrode in the series resonant circuit of the high pass filter.
At least one capacitor electrode that realizes the capacitor is disposed above the ground electrode in the stacking direction, and at least one capacitor that realizes the third inductor in the series resonance circuit of the high-pass filter. The high frequency switch according to any one of claims 15 to 18, characterized in that the stripline electrodes (1 or more) are arranged in a layer above the capacitor electrode in the stacking direction. 20. At least one of the low frequency transmission / reception switching circuit and the high frequency transmission / reception switching circuit is a circuit that switches transmission / reception in accordance with a voltage applied to a diode, and the diode is mounted on an upper surface of the laminate. The high frequency switch according to any one of claims 14 to 19, wherein: 21. At least one of the low frequency transmission / reception switching circuit and the high frequency transmission / reception switching circuit is GaAs.
The high frequency switch according to claim 14, wherein the GaAs switch is a switch, and the GaAs switch is mounted on an upper surface of the stacked body. 22. An antenna duplexer for simultaneously transmitting and receiving radio waves in different frequency bands, wherein radio waves in different frequency bands are transmitted and received via a first terminal connected to the antenna side. And a first duplexer connected to a second terminal for transmitting and receiving a low frequency signal in the diplexer, and for transmitting and receiving a high frequency signal in the diplexer A second duplexer connected to a third terminal of the diplexer, the diplexer passing only signals in a low frequency band arranged between the first terminal and the second terminal. A low-pass filter, and a high-pass filter that passes only a signal in a high-frequency band, which is arranged between the first terminal and the third terminal, the low-pass filter The filter has at least two resonance circuits, and the low pass filter forms at least two attenuation poles on the high band side of the pass band by the action of the two resonance circuits. vessel. 23. The high pass filter includes one resonance circuit, the high pass filter forms one attenuation pole on a low pass side of a pass band, and the low pass filter has the lowest 23. The antenna duplexer according to claim 22, wherein only a signal in a frequency band in the range is passed. 24. The low pass filter is a parallel circuit including a first inductor and a first capacitor arranged between the first terminal and the second terminal as the two resonance circuits. 24. The antenna duplexer according to claim 22 or 23, comprising a resonance circuit and a series resonance circuit formed of a second inductor and a second capacitor arranged between the second terminal and the ground. 25. The high-pass filter, a series circuit composed of a third capacitor and a fourth capacitor disposed between the first terminal and the third terminal, as the resonance circuit, The third capacitor and the fourth
25. The antenna duplexer according to claim 24, further comprising a series resonance circuit including a third inductor and a fifth capacitor arranged between the connection point with the capacitor and the ground. 26. A plurality of stripline electrodes for realizing an inductor, a plurality of capacitor electrodes for realizing a capacitor, and a plurality of via hole conductors for connecting the plurality of stripline electrodes and the plurality of capacitor electrodes. The antenna duplexer according to claim 25, which is realized by a laminated body of a plurality of formed dielectric layers. 27. A wireless communication device for transmitting and receiving radio waves in a plurality of frequency bands, comprising a high frequency switch for switching transmission and reception of radio waves in a plurality of different frequency bands, the high frequency switch being connected to an antenna side. And a diplexer for transmitting and receiving radio waves in different frequency bands through the first terminal to separate and combine, and a second terminal for transmitting and receiving a low frequency signal in the diplexer. A low-frequency transmission / reception switching circuit; and a high-frequency transmission / reception switching circuit connected to a third terminal for transmitting / receiving a high-frequency signal in the diplexer, wherein the diplexer includes the first terminal and the first terminal. Between the first terminal and the third terminal, which is arranged between the first terminal and the second terminal and which passes only a signal in a low frequency band. And a high-pass filter that passes only a signal in a high-frequency band that is arranged, the low-pass filter has at least two resonance circuits, and the low-pass filter has two resonance circuits. Wireless communication equipment, characterized in that at least two attenuation poles are formed on the high frequency side of the pass band by the action of. 28. A wireless communication device for simultaneously transmitting and receiving radio waves in a plurality of frequency bands, comprising an antenna duplexer for simultaneously transmitting and receiving radio waves in different frequency bands, wherein the antenna duplexer is on the antenna side. Via a first terminal connected to the diplexer for transmitting and receiving by separating and combining radio waves of different frequency bands, and a second terminal for transmitting and receiving a low frequency signal in the diplexer. A first duplexer connected, and a second duplexer connected to a third terminal for transmitting and receiving a high frequency signal in the diplexer, the diplexer, the diplexer, the first terminal and the A low-pass filter, which is arranged between the first terminal and the second terminal, and which passes only a signal in a low-frequency band, and is arranged between the first terminal and the third terminal. And a high-pass filter that passes only a signal in a high-frequency band, the low-pass filter has at least two resonance circuits, the low-pass filter, two of the resonance circuit A radio communication device characterized in that at least two attenuation poles are formed on the high frequency side of the pass band by the function.