JP2003209305A - 電界調整式双安定分子システム - Google Patents

電界調整式双安定分子システム

Info

Publication number
JP2003209305A
JP2003209305A JP2002328464A JP2002328464A JP2003209305A JP 2003209305 A JP2003209305 A JP 2003209305A JP 2002328464 A JP2002328464 A JP 2002328464A JP 2002328464 A JP2002328464 A JP 2002328464A JP 2003209305 A JP2003209305 A JP 2003209305A
Authority
JP
Japan
Prior art keywords
branch
molecule
molecular
unit
electric field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2002328464A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003209305A5 (enExample
Inventor
Xiao-An Zhang Shiin
シーン・ツァオ−アン・ツァン
Zhang-Lin Zhou
ツァン−リン・ツォウ
R Stanley Williams
アール・スタンレイ・ウィリアムス
Kent Vincent
ケント・ビンセント
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/013,643 external-priority patent/US6751365B2/en
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of JP2003209305A publication Critical patent/JP2003209305A/ja
Publication of JP2003209305A5 publication Critical patent/JP2003209305A5/ja
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
JP2002328464A 2001-11-13 2002-11-12 電界調整式双安定分子システム Ceased JP2003209305A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/013,643 US6751365B2 (en) 2000-12-14 2001-11-13 E-field-modulated bistable molecular mechanical device
US10/013643 2001-11-13

Publications (2)

Publication Number Publication Date
JP2003209305A true JP2003209305A (ja) 2003-07-25
JP2003209305A5 JP2003209305A5 (enExample) 2006-01-05

Family

ID=27658048

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002328464A Ceased JP2003209305A (ja) 2001-11-13 2002-11-12 電界調整式双安定分子システム

Country Status (1)

Country Link
JP (1) JP2003209305A (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006001394A1 (ja) * 2004-06-24 2006-01-05 Sony Corporation 機能性分子素子及び機能性分子装置
WO2006001321A1 (ja) * 2004-06-23 2006-01-05 Sony Corporation 機能性分子装置
US7408184B2 (en) 2002-12-25 2008-08-05 Sony Corporation Functional molecular element and functional molecular device
JP2009533547A (ja) * 2006-03-23 2009-09-17 ライプニッツ−インスティトゥート フィア ノイエ マテリアーリエン ゲマインニュッツィゲ ゲゼルシャフト ミット ベシュレンクタ ハフトゥンク 酸化物シースを有する金属ナノワイヤ、及びその製造方法
WO2010032608A1 (ja) * 2008-09-19 2010-03-25 ソニー株式会社 分子素子およびその製造方法ならびに集積回路装置およびその製造方法ならびに三次元集積回路装置およびその製造方法
KR101193581B1 (ko) 2004-06-24 2012-10-26 소니 도이칠란트 게엠베하 기능성 분자 소자 및 기능성 분자 장치
JP2015216706A (ja) * 2014-04-25 2015-12-03 国立研究開発法人物質・材料研究機構 熱雑音から電力を発生させる分子ローター

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6031756A (en) * 1997-02-06 2000-02-29 International Business Machines Corporation Molecule, layered medium and method for creating a pattern

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6031756A (en) * 1997-02-06 2000-02-29 International Business Machines Corporation Molecule, layered medium and method for creating a pattern

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7408184B2 (en) 2002-12-25 2008-08-05 Sony Corporation Functional molecular element and functional molecular device
WO2006001321A1 (ja) * 2004-06-23 2006-01-05 Sony Corporation 機能性分子装置
JP2006012947A (ja) * 2004-06-23 2006-01-12 Sony Corp 機能性分子装置
US7679080B2 (en) 2004-06-23 2010-03-16 Sony Corporation Functional molecular device
JP2006108627A (ja) * 2004-06-24 2006-04-20 Sony Corp 機能性分子素子及び機能性分子装置
WO2006001394A1 (ja) * 2004-06-24 2006-01-05 Sony Corporation 機能性分子素子及び機能性分子装置
KR101193581B1 (ko) 2004-06-24 2012-10-26 소니 도이칠란트 게엠베하 기능성 분자 소자 및 기능성 분자 장치
US8692231B2 (en) 2004-06-24 2014-04-08 Sony Corporation Functional molecular element and functional molecular device
JP2009533547A (ja) * 2006-03-23 2009-09-17 ライプニッツ−インスティトゥート フィア ノイエ マテリアーリエン ゲマインニュッツィゲ ゲゼルシャフト ミット ベシュレンクタ ハフトゥンク 酸化物シースを有する金属ナノワイヤ、及びその製造方法
WO2010032608A1 (ja) * 2008-09-19 2010-03-25 ソニー株式会社 分子素子およびその製造方法ならびに集積回路装置およびその製造方法ならびに三次元集積回路装置およびその製造方法
JP2010073916A (ja) * 2008-09-19 2010-04-02 Sony Corp 分子素子およびその製造方法ならびに集積回路装置およびその製造方法ならびに三次元集積回路装置およびその製造方法
CN102150274A (zh) * 2008-09-19 2011-08-10 索尼公司 分子元件及其制造方法、集成电路装置及其制造方法、三维集成电路装置及其制造方法
US8482000B2 (en) 2008-09-19 2013-07-09 Sony Corporation Molecular element, manufacturing method thereof, integrated circuit device, manufacturing method thereof, three-dimensional integrated circuit device, and manufacturing method thereof
JP2015216706A (ja) * 2014-04-25 2015-12-03 国立研究開発法人物質・材料研究機構 熱雑音から電力を発生させる分子ローター

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