JP2003202675A - Method for manufacturing liquid crystal panel - Google Patents

Method for manufacturing liquid crystal panel

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Publication number
JP2003202675A
JP2003202675A JP2002293705A JP2002293705A JP2003202675A JP 2003202675 A JP2003202675 A JP 2003202675A JP 2002293705 A JP2002293705 A JP 2002293705A JP 2002293705 A JP2002293705 A JP 2002293705A JP 2003202675 A JP2003202675 A JP 2003202675A
Authority
JP
Japan
Prior art keywords
mim
liquid crystal
pattern
crystal panel
mim element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002293705A
Other languages
Japanese (ja)
Other versions
JP3552711B2 (en
Inventor
Seiki Koide
清貴 小出
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
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Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2002293705A priority Critical patent/JP3552711B2/en
Publication of JP2003202675A publication Critical patent/JP2003202675A/en
Application granted granted Critical
Publication of JP3552711B2 publication Critical patent/JP3552711B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To prevent deterioration of display quality such as 'block pattern separation' by forming uniform MIM (metal-insulator-metal) elements on a substrate by using a sequential exposing method. <P>SOLUTION: In forming the MIM elements on an MIM liquid crystal panel with photolithography, patterns on a specified layer are sequentially exposed by repeatedly using an identical photomask. As difference in pattern dimension between masks caused by variation in photomask manufacturing is eliminated, the pattern dimensions of the MIM elements are made constant. Consequently as capacitance of the MIM elements is made constant, effective voltage written in the elements becomes uniform and as result uneven contrast in a screen of the liquid crystal panel is dissolved. <P>COPYRIGHT: (C)2003,JPO

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、MIM液晶パネル
に用いるMIM素子の製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an MIM element used for a MIM liquid crystal panel.

【0002】[0002]

【従来の技術】従来よりMIM素子製造方法としては”
David R. Baraff et al.,SI
D’80 Digest, p200〜201, 19
80”に示されているようにフォトリソグラフィーを用
いてパターン形成を行っていた。露光方式としては、露
光装置の発達過程と同期するかたちでコンタクト方式、
プロキシミティー方式が主に使用されていた。近年、露
光機メーカーから液晶パネル製造用途としてミラープロ
ジェクション方式やステッパー方式の装置が供給される
ようになり、これらの装置によりTFT、MIMなどを
使用したアクティブマトリックス液晶パネルが製造でき
るようになった。しかしながら高精細、大画面化といっ
た市場からの要求に応えるためには、コンタクト、プロ
キシミティー、ミラープロジェクションといった露光方
式ではMIM液晶パネルの高精細化、大画面化が装置性
能上、制限されるという欠点があった。具体的には、コ
ンタクト方式、プロキシミティー方式は大型化には対応
できるものの、高精細という観点では解像度が不十分な
ため微細なパターン形成ができず、加えてフォトマスク
とワーク基板が接触または近接するためにゴミによるパ
ターン不良が発生するなど歩留りが悪いという欠点があ
った。一方ミラープロジェクション方式はミラーなどの
装置を構成する光学系部品の精度的な問題から大型化に
限界がある。ステッパーによる逐次露光方式はレンズの
解像度が高く高精細化が可能な上、露光ステップ数を増
やし大画面化に対応できることから、レンズなどの光学
系部品で高精細、大画面化が制限されるといった問題は
ない。
2. Description of the Related Art Conventionally, as a method for manufacturing an MIM element, "
David R.D. Baraff et al. , SI
D'80 Digest, p200-201, 19
As shown in 80 ", photolithography was used to form a pattern. The exposure method was a contact method in synchronization with the development process of the exposure apparatus.
The proximity method was mainly used. In recent years, mirror projection type and stepper type devices have come to be supplied from exposure machine manufacturers as liquid crystal panel manufacturing applications, and active matrix liquid crystal panels using TFTs, MIMs and the like can be manufactured by these devices. However, in order to meet the market demand for high definition and large screen, exposure methods such as contact, proximity, and mirror projection limit the high definition and large screen of MIM liquid crystal panels in terms of device performance. was there. Specifically, although the contact method and the proximity method can cope with an increase in size, a fine pattern cannot be formed because the resolution is insufficient from the viewpoint of high definition. In addition, the photomask and the work substrate are in contact with or close to each other. Therefore, there is a defect that the yield is poor such as pattern failure due to dust. On the other hand, the mirror projection method has a limitation in increasing the size due to a problem of accuracy of optical system components constituting a device such as a mirror. The sequential exposure method using a stepper has a high resolution of the lens and can achieve high definition, and since it can respond to a large screen by increasing the number of exposure steps, it is said that the optical components such as the lens limit the high definition and large screen. No problem.

【0003】しかし逐次露光方式で大画面をダイのつな
ぎによって露光をした場合、各ダイ毎に液晶パネル完成
後にコントラストがばらつくという欠点が発生した。い
わゆる「ブロック分かれ」となって液晶パネルの表示品
位を悪くする。この点が逐次露光方式を用いる場合の最
大の問題点であった。
However, when a large screen is exposed by connecting the dies by the sequential exposure method, there is a drawback that the contrast varies for each die after the liquid crystal panel is completed. So-called "block division" occurs and the display quality of the liquid crystal panel deteriorates. This is the biggest problem when using the sequential exposure method.

【0004】[0004]

【発明が解決しようとする課題】本発明は逐次露光方式
を用いて基板上に均一なMIM素子を形成することによ
って「ブロック分かれ」といった表示品位の悪化を防止
する点にある。
An object of the present invention is to prevent the deterioration of display quality such as "block division" by forming uniform MIM elements on a substrate by using a sequential exposure method.

【0005】[0005]

【課題を解決するための手段】本発明のMIM素子の製
造方法は、前記課題を解決するため以下の様な特徴を有
する。
The method for manufacturing an MIM element of the present invention has the following features in order to solve the above problems.

【0006】(1)フォトリソグラフィーを用いたMI
Mの製造方法において、少なくとも画面部分のMIM素
子パターンを逐次露光方式により形成することを特徴と
する。
(1) MI using photolithography
In the manufacturing method of M, at least the MIM element pattern of the screen portion is formed by a sequential exposure method.

【0007】(2)第1項記載の逐次露光方式によりM
IM素子パターンを形成する製造方法において、少なく
とも画面部分のMIM素子パターンを各層毎に同一のフ
ォトマスクにより形成することを特徴とする。
(2) M is obtained by the sequential exposure method described in item 1.
In the manufacturing method of forming the IM element pattern, at least the MIM element pattern of the screen portion is formed by the same photomask for each layer.

【0008】(3)第1項記載の逐次露光方式における
各ダイのつなぎ位置をMIM素子パターンを構成する各
層毎にずらすことを特徴とする。
(3) In the successive exposure method described in the first item, the connecting position of each die is shifted for each layer forming the MIM element pattern.

【0009】(4)第1項記載の逐次露光方式における
各ダイのつなぎめがMIM素子を形成するパターンより
ずらした位置に有するを特徴とする第1項記載のMIM
素子の製造方法。
(4) The MIM according to the first aspect is characterized in that the connection between the dies in the sequential exposure method according to the first aspect is at a position displaced from the pattern forming the MIM element.
Device manufacturing method.

【0010】(5)本発明の液晶パネルの製造方法は、
第1の層及び第2の層が設けられた基板を有する液晶パ
ネルの製造方法において、前記第1の層上に設けられた
第1のレジストを逐次露光方式によって複数の領域に分
けて露光する工程と、前記第2の層上に設けられた第2
のレジストを逐次露光方式によって複数の領域に分けて
露光する工程と、を具備し、前記基板の面上において、
前記第1のレジストの前記各領域がつながる位置と、前
記第2のレジストの前記各領域がつながる位置とが、互
いに平面的に異なる位置に配置されることを特徴とす
る。
(5) The liquid crystal panel manufacturing method of the present invention is
In a method of manufacturing a liquid crystal panel having a substrate on which a first layer and a second layer are provided, a first resist provided on the first layer is divided into a plurality of regions and exposed by a sequential exposure method. And a second layer provided on the second layer.
Exposing the resist into a plurality of areas by a sequential exposure method, and, on the surface of the substrate,
A position where the respective regions of the first resist are connected and a position where the respective regions of the second resist are connected are arranged at mutually different positions in plan view.

【0011】[0011]

【作用】MIM液晶パネルでは図5に示すように液晶層
とMIM素子が直列に配置され、この系に印加される駆
動電圧は液晶層とMIM素子の容量比で次式のように分
割される。
In the MIM liquid crystal panel, the liquid crystal layer and the MIM element are arranged in series as shown in FIG. 5, and the driving voltage applied to this system is divided by the capacitance ratio of the liquid crystal layer and the MIM element as shown in the following equation. .

【0012】[0012]

【数1】 [Equation 1]

【0013】MIM素子のパターン寸法の変化によりM
IM素子容量が変化するため、MIM素子へ印加される
電圧が変化することになる。
When the pattern size of the MIM element changes, M
Since the IM element capacitance changes, the voltage applied to the MIM element changes.

【0014】従ってMIM素子のON抵抗がのばらつき
となって液晶層に書き込まれる実効電圧をばらつかせる
ため、液晶の動作状態が変化し液晶パネルの画面内にコ
ントラストのむらを生じる。従って逐次露光方式におい
ては各ダイ毎のMIM素子寸法の変化を如何に抑えるか
が重要となる。画面部分を同一のフォトマスクで露光す
ることによりフォトマスクの製造ばらつきによるマスク
間のパターン寸法差をなくし、さらに各ダイのつなぎ目
位置を各層毎にずらすことによって、MIM素子を形成
する各電極の寸法が変化する位置がずれるため「ブロッ
ク分かれ」を抑えることができる。
Therefore, since the ON resistance of the MIM element is varied and the effective voltage written in the liquid crystal layer is varied, the operating state of the liquid crystal is changed and uneven contrast occurs in the screen of the liquid crystal panel. Therefore, in the sequential exposure method, how to suppress the change in the MIM element size for each die is important. By exposing the screen part with the same photomask, the pattern size difference between the masks due to the manufacturing variation of the photomask is eliminated, and the joint position of each die is shifted for each layer, so that the size of each electrode forming the MIM element Since the position where the change occurs shifts, "block division" can be suppressed.

【0015】[0015]

【実施例】以下に、本発明に基づく実施例を順を追って
説明していく。
EXAMPLES Examples according to the present invention will be described below in order.

【0016】ガラスなどの絶縁基板基板上に、MIM素
子のベース電極パターンと信号ラインとなる、例えばタ
ンタルなどをスパッタ法により成膜する。次に該タンタ
ル膜上にフォトレジストを塗布し、図1に示すように画
面部分を第一層目のパターンの同一フォトマスクの繰り
返しによって逐次露光する。画面部分以外は複数のマス
クに割付て露光しても問題ない。
On an insulating substrate such as glass, a film of tantalum or the like, which will be the base electrode pattern of the MIM element and a signal line, is formed by sputtering. Next, a photoresist is applied on the tantalum film, and the screen portion is sequentially exposed by repeating the same photomask having the pattern of the first layer as shown in FIG. Except for the screen part, there is no problem if it is exposed by allocating to multiple masks.

【0017】ここでフォトマスクは、例えばポジプロセ
ス法や多重露光法によってパターン寸法の変動が画面内
で極力少ないものを用いる。通常逐次露光方式に対応し
たフォトマスクは図4のように各パターン群周辺を遮光
帯と呼ばれる1.5〜5mm幅のCrパターンで囲まれ
ており、繰り返しパターンである画面内と遮光帯近傍で
はパターン寸法が変動している。これを解決するために
はポジプロセス法や多重露光法が有効である。
Here, as the photomask, a mask whose pattern dimension variation is as small as possible within the screen by, for example, a positive process method or a multiple exposure method is used. The photomask corresponding to the normal sequential exposure method is surrounded by a Cr pattern having a width of 1.5 to 5 mm called a shading band around each pattern group as shown in FIG. 4, and in a repeated pattern in the screen and in the vicinity of the shading band. The pattern dimensions are changing. To solve this problem, the positive process method and the multiple exposure method are effective.

【0018】次に、現像、エッチング及びレジスト剥離
を行い、ベース電極パターンと信号ラインを得る。次に
MIM素子の絶縁層としてを陽極酸化法によってベース
電極パターンと、信号ライン上にタンタル酸化膜を形成
する。しかる後に例えば、クロム、チタン、タンタルを
スパッタ法により成膜しMIM素子の結合電極と信号ラ
インの画面部分を第二層目の同一フォトマスクで逐次露
光する。この時、図2のように各ダイが接続される位置
が第一層のベース電極パターンと第二層の結合電極パタ
ーンで、ずれるように露光を行うとMIM素子面積の変
動はベース電極と結合電極を同位置でつなぐ場合にくら
べ少なくなる。
Next, development, etching and resist stripping are performed to obtain a base electrode pattern and a signal line. Next, a tantalum oxide film is formed on the base electrode pattern and the signal line as an insulating layer of the MIM element by the anodic oxidation method. Then, for example, chromium, titanium, and tantalum are deposited by a sputtering method, and the coupling electrode of the MIM element and the screen portion of the signal line are sequentially exposed by the same photomask of the second layer. At this time, as shown in FIG. 2, when the dies are connected so that the positions where the respective dies are connected are deviated from the base electrode pattern of the first layer and the coupling electrode pattern of the second layer, the variation of the MIM element area is coupled with the base electrode. This is less than when the electrodes are connected at the same position.

【0019】一方、ダイをつなぐ位置であるが、図3の
ようにMIM素子を形成するパターンと位置的に離すこ
とによってつなぎ精度の影響を少なくすることができ
る。しかる後に現像、エッチング及びレジスト剥離をお
こない、MIM素子を完成する。最後に例えばITOを
スパッタ法により成膜し、画素電極を形成する。
On the other hand, although it is the position where the dies are connected, the influence of the connection accuracy can be reduced by separating the position from the pattern for forming the MIM element as shown in FIG. Then, development, etching and resist peeling are performed to complete the MIM element. Finally, for example, ITO is formed into a film by a sputtering method to form a pixel electrode.

【0020】以上MIM素子の形成方法を述べたが、T
FTでもパターン寸法のばらつきはゲート浮遊容量のば
らつきとなるので、特に中間調を多用するパネルではM
IM同様に「ブロック分かれ」を生じる。従って本発明
はパターン寸法のばらつきを抑える効果が高くその意味
でTFTに対しても有効である。
The method of forming the MIM element has been described above.
Even in FT, variations in pattern dimensions cause variations in gate stray capacitance.
Similar to IM, "block division" occurs. Therefore, the present invention has a high effect of suppressing variations in pattern dimensions, and is also effective for TFTs in that sense.

【0021】[0021]

【発明の効果】以上説明したように本考案は逐次露光方
式の持つ高精度且つ大型化が容易という利点をMIM素
子の形成に生かす一方、表示部分の各ダイ毎のパターン
寸法の変化を低減し均一な表示を得るという効果を有す
る。本考案によってMIM液晶パネルに対する高精細
化、大型化という市場の要求に応えることが可能となっ
た。
As described above, the present invention makes use of the advantages of the sequential exposure method, such as high accuracy and easy size increase, in forming MIM elements, while reducing the change in pattern size for each die in the display area. This has the effect of obtaining a uniform display. The present invention makes it possible to meet the market demand for higher definition and larger size of MIM liquid crystal panels.

【0022】[0022]

【図面の簡単な説明】[Brief description of drawings]

【図1】 本発明実施例の一つである画面部分のMIM
素子を同一マスクの繰り返しで逐次露光した状態を示す
図である。
FIG. 1 is an MIM of a screen portion according to one embodiment of the present invention.
It is a figure which shows the state which carried out sequential exposure of the element by repeating the same mask.

【図2】 本発明実施例の一つである画面部分のダイの
つなぎ位置がMIM第1層と第2層でずらした状態を示
す図である。
FIG. 2 is a diagram showing a state in which a die connecting position of a screen portion, which is one of embodiments of the present invention, is deviated between the MIM first layer and the second layer.

【図3】 本発明実施例の一つであるダイのつなぎ位置
をMIM素子を形成するパターンと位置的にずらした状
態を示す図である。
FIG. 3 is a diagram showing a state in which a die connecting position, which is one of the embodiments of the present invention, is positionally displaced from a pattern for forming an MIM element.

【図4】 逐次露光方式に用いるフォトマスクに用いら
れるパターン群を囲む遮光帯を示す図である。
FIG. 4 is a diagram showing a light-shielding band surrounding a pattern group used for a photomask used in a sequential exposure method.

【図5】 MIM液晶パネルにおけるMIM素子と液晶
層との電気的な接続状態を示す図である。
FIG. 5 is a diagram showing an electrically connected state between a MIM element and a liquid crystal layer in an MIM liquid crystal panel.

【手続補正書】[Procedure amendment]

【提出日】平成14年10月31日(2002.10.
31)
[Submission date] October 31, 2002 (2002.10.
31)

【手続補正1】[Procedure Amendment 1]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】発明の名称[Name of item to be amended] Title of invention

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【発明の名称】 液晶パネルの製造方法Title of the invention: Method for manufacturing liquid crystal panel

【手続補正2】[Procedure Amendment 2]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】特許請求の範囲[Name of item to be amended] Claims

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【特許請求の範囲】[Claims]

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 MIM素子の製造方法において、少なく
とも画面部分のMIM素子パターンを逐次露光方式によ
り形成することを特徴とするMIM素子の製造方法。
1. A method of manufacturing an MIM element, which comprises forming at least a MIM element pattern on a screen portion by a sequential exposure method.
【請求項2】 逐次露光方式によりMIM素子パターン
を形成する製造方法において、少なくとも画面部分のM
IM素子パターンを各層毎に同一のフォトマスクにより
形成することを特徴とする請求項1記載のMIM素子の
製造方法。
2. A manufacturing method for forming an MIM element pattern by a sequential exposure method, wherein M of at least a screen portion is formed.
The method of manufacturing an MIM element according to claim 1, wherein the IM element pattern is formed for each layer by the same photomask.
【請求項3】 逐次露光方式における各ダイのつなぎ位
置をMIM素子パターンを構成する各層毎にずらすこと
を特徴とする請求項1記載のMIM素子の製造方法。
3. The method for manufacturing an MIM element according to claim 1, wherein the connecting position of each die in the sequential exposure method is shifted for each layer constituting the MIM element pattern.
【請求項4】 逐次露光方式における各ダイのつなぎめ
がMIM素子を形成するパターンよりずらした位置に有
するを特徴とする請求項1記載のMIM素子の製造方
法。
4. The method of manufacturing an MIM element according to claim 1, wherein the connection between the dies in the sequential exposure method is at a position displaced from the pattern forming the MIM element.
【請求項5】第1の層及び第2の層が設けられた基板を
有する液晶パネルの製造方法において、 前記第1の層上に設けられた第1のレジストを逐次露光
方式によって複数の領域に分けて露光する工程と、 前記第2の層上に設けられた第2のレジストを逐次露光
方式によって複数の領域に分けて露光する工程と、を具
備し、 前記基板の面上において、前記第1のレジストの前記各
領域がつながる位置と、前記第2のレジストの前記各領
域がつながる位置とが、互いに平面的に異なる位置に配
置されることを特徴とする液晶パネルの製造方法。
5. A method of manufacturing a liquid crystal panel having a substrate provided with a first layer and a second layer, wherein a first resist provided on the first layer is formed into a plurality of regions by a sequential exposure method. And exposing the second resist provided on the second layer into a plurality of regions by a sequential exposure method, and exposing the substrate on the surface of the substrate. A method of manufacturing a liquid crystal panel, wherein a position where the respective regions of the first resist are connected to each other and a position where the respective regions of the second resist are connected to each other are two-dimensionally different from each other.
JP2002293705A 2002-10-07 2002-10-07 Liquid crystal panel manufacturing method and exposure method Expired - Fee Related JP3552711B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002293705A JP3552711B2 (en) 2002-10-07 2002-10-07 Liquid crystal panel manufacturing method and exposure method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002293705A JP3552711B2 (en) 2002-10-07 2002-10-07 Liquid crystal panel manufacturing method and exposure method

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