JP2003179331A - Component joining method and device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a component joining method capable of joining after making an electrode corrosion accelerating material sufficiently flow out to the outer side together with a resin and a component joined body formed by the method. <P>SOLUTION: The component joining method is provided with an initial pressurizing process of making the electrode corrosion accelerating material 10 flow out from a clearance of a component 1 and a substrate 5 outwards together with an insulating joining resin 3 immediately after the component 1 and the substrate 5 start to get closer and a thermo-compression bonding process of bringing the component and the substrate further closer with a pressure equal to or more than the pressure in the initial pressurizing process thereafter, heating and setting the insulating joining resin at a temperature higher than the one in the initial pressurizing process and joining the component 1 and the substrate 5. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a component and a substrate by bringing the component and the substrate close to each other through an insulating bonding resin to bring the plurality of electrodes of the component and the plurality of electrodes of the substrate into contact with each other. The present invention relates to a component joining method for joining and a component joined body formed by the method.

[0002]

2. Description of the Related Art Hitherto, various types of structures have been known as this type of component joining method.

For example, the component and the substrate are brought close to each other via an insulating bonding resin, and the plurality of electrodes of the component and the plurality of electrodes of the substrate are brought into contact with each other to bond the component and the substrate. ing. When the parts and the substrate are pressed into contact with each other via an insulating bonding resin, a large pressure necessary for bonding is applied at one time to extrude the insulating bonding resin from between the parts and the substrate, and a plurality of electrodes of the component The electrodes and the plurality of electrodes of the substrate are brought into contact with each other directly or indirectly through the conductive particles in the insulating bonding resin to ensure reliable contact between the electrodes. An example of the insulating bonding resin containing the conductive particles is an anisotropic conductive resin sheet (so-called ACF) in which the conductive particles are substantially uniformly dispersed in the insulating resin.

Recently, such a joining method has been used in, for example, a mobile phone. However, when the mobile phone is frequently used in a region near the coast, short-circuit defects due to bump corrosion at electrode portions frequently occur. Tend to do.

When the cause of this is analyzed, as shown in FIG. 7, a void 20 having a substantially circular cross section is generated between the Au electrodes 2 and 2 on the IC chip side, and Na is present in the void 20.
Cl crystal 26 is present and the nitrogen compound CN
It has been found that there are electrode corrosion promoters such as the base material.

By the way, in the ACF 3, there are conductive particles 24, water molecules 23, cations 21 and anions 22, which flow together with the resin of ACF 3 at the time of pressure bonding. In this anion 22, the anion CN ⁻ of the CN group is AC.
It may be included depending on the material of F, and due to this CN group, liquefaction of water molecules 23 in the void 20 portion
A water retention structure is formed. That is, ACF at the time of pressure bonding
Due to the resin flow of No. 3, the CN-based substance moves and is clogged between the Au electrodes 2 and 2, in other words, between the bumps. This CN group substance is a compound having a high water absorption rate with a particle size of about 10 and several μm, and forms a state in which ions can easily move.

[0007]

However, in the above method, when a component having a small gap between electrodes (for example, a pitch between electrodes is 10 μm) is joined to a substrate, the pressure required for the joining is suddenly applied. The gap between the electrode on the board and the electrode on the board shrinks all at once, causing the electrode corrosion promoting substance to get caught between the electrode on the component and the electrode on the board before flowing out together with the resin to the outside, causing the electrode to corrode. It was.

[0008] Therefore, an object of the present invention is to solve the above problems and to form a component joining method by which an electrode corrosion accelerating substance can be joined together after it sufficiently flows out together with a resin to the outside and a method therefor. It is to provide a joined part.

[0009]

In order to achieve the above object, the present invention is configured as follows.

According to the first aspect of the present invention, after the component and the substrate are arranged with the insulating bonding resin interposed therebetween, the component and the substrate are brought close to each other through the bonding resin, and a plurality of the components In the component joining method of bringing the electrode and the plurality of electrodes of the substrate into contact with each other to join the component and the substrate, the component and the substrate are brought relatively close to each other, and the electrodes included in the joining resin are corroded. A step of causing the electrode corrosion accelerating substance to flow together with the bonding resin in a direction away from the joint between the component and the substrate through a gap between the component and the substrate, and further relatively bringing the component and the substrate close to each other. Then, the plurality of electrodes of the component and the plurality of electrodes of the substrate are brought into contact with each other to bond the component and the substrate, and the bonding resin is heated and cured, so that the plurality of electrodes of the component. And above Provides a component bonding method characterized by in a state of being contact with the plurality of electrodes of the plate was set to and a step of bonding the above components and the substrate.

According to the second aspect of the present invention, after the component and the board are arranged with the insulating bonding resin interposed therebetween, the component and the substrate are brought close to each other with the insulating bonding resin interposed therebetween to make the component In a component joining method of joining a plurality of electrodes and a plurality of electrodes of the substrate respectively to join the component and the substrate, immediately after the components and the substrate are relatively approached to each other, the insulating joining resin is used. Flow through the insulating bonding resin, and an electrode corrosion accelerating substance contained in the insulating bonding resin and sandwiched between the adjacent electrodes after the bonding and capable of corroding the electrode is discharged from the gap between the component and the substrate to the insulating bonding resin. Together with the initial pressurizing step that flows outwards, and after the initial pressurizing step, the component and the substrate are further moved relative to each other at a pressure equal to or higher than the pressure in the initial pressurizing step, and a plurality of the component parts are Electrodes and the above Each of the plurality of electrodes are contacted with each other, and the insulating bonding resin is heated and cured at a temperature higher than that in the initial pressurizing step, so that the plurality of electrodes of the component and the plurality of electrodes of the substrate. And a thermocompression bonding step of bonding the component and the substrate in a state where they are in contact with each other.

According to the third aspect of the present invention, further, there is provided a first component outside region thermosetting step of heating and curing the insulating bonding resin flowing outward from between the component and the substrate. Alternatively, the method for joining components according to the second aspect is provided.

According to a fourth aspect of the present invention, the insulating joining resin is an anisotropic conductive sheet or an anisotropic conductive paste according to any one of the first to third aspects. provide.

According to a fifth aspect of the present invention, in the thermocompression bonding step, heating is performed so that the temperature rising rate per unit time is higher than in the initial pressurizing step, so that the heating is performed. The method for joining components according to 1. is provided.

According to a sixth aspect of the present invention, the pressure applied in the thermocompression bonding step is higher than the pressure applied in the initial pressure applying step. A method for joining parts is provided.

According to the seventh aspect of the present invention, at least the gap between the component and the substrate with the insulating bonding resin interposed in the initial pressurizing step is at least the component. Is a total dimension of the thickness of the electrode and the thickness of the electrode of the substrate, greater than the total dimension of the thickness of the electrode of the component and the thickness of the electrode of the substrate at the end of the thermocompression bonding step And a method for joining parts according to any one of the first to sixth aspects, wherein the particle size is larger than the particle diameter of the electrode corrosion promoting substance.

According to an eighth aspect of the present invention, the electrode corrosion promoting substance is a CN-based substance, and at least one of the electrode of the component and the electrode of the substrate is gold. The component joining method according to any one of aspects 1 to 7 is provided.

According to a ninth aspect of the present invention, there is provided a component joined body formed by joining the component and the substrate by the component joining method according to any one of the first to eighth aspects.

[0019]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below in detail with reference to the drawings.

The component joining method according to the first embodiment of the present invention and the component joined body formed by the method are shown in FIG.
As shown in FIG. 3, after the components such as the IC chip 1 and the substrate such as the flexible substrate 5 are arranged via the insulating bonding resin 3, the IC chip 1 and the substrate 5 are brought close to each other and the IC chip is One IC electrode 1 (for example, a bump electrode formed of a gold bump) 2 and a plurality of gold or other metal electrodes 4 on the substrate are brought into contact with each other to bond the IC chip 1 and the substrate 5 to each other. In the component joining method described above, an initial pressing step and a thermocompression bonding step are provided.

The insulating bonding resin 3 is, for example, an anisotropic conductive resin sheet (so-called ACF) or an anisotropic conductive paste in which conductive particles are substantially uniformly dispersed in the insulating resin.

In the initial pressurizing step, as shown in FIGS. 1 and 2, the IC is bonded with the insulating bonding resin 3 interposed.
The chip 1 and the substrate 5 are started to relatively approach each other. For example, after the substrate 5 is sucked and held by a substrate holding device such as the stage 16 (see FIG. 5), the insulating bonding resin 3 is placed on the substrate 5 while the IC chip 1 is sucked and held by the lower end of the crimping tool. To approach the substrate 5. Immediately after this approach starts, the insulating bonding resin 3 is sandwiched between the IC chip 1 and the substrate 5, and the insulating bonding resin 3 flows. At this time, the electrode corrosion-promoting substance 10 contained in the insulating bonding resin 3 and sandwiched between the adjacent bump electrodes 2 on the IC chip 1 side after the bonding and capable of corroding the electrode 2 is the IC chip. The gap 30 between the substrate 1 and the substrate 5 flows outward together with the insulating bonding resin 3.

Therefore, in the initial pressurizing step, impurities, especially the electrode corrosion accelerating substance 10, are removed from the adjacent electrodes 2 and 2.
Alternatively, it is a step of causing the insulating bonding resin 3 to flow out from the gap 30 between the IC chip 1 and the substrate 5 to the outside so as not to be caught or clogged between the 4 and 4. Therefore, at least the gap 30 between the opposing surfaces of the IC chip 1 and the substrate 5 in the state where the insulating bonding resin 3 is interposed in the initial pressing step is at least the IC chip 1 at least. The total size of the thickness t1 of the electrode 2 and the thickness t3 of the electrode 4 of the substrate 5 is equal to or larger than the total size, and the thickness of the electrode 2 of the IC chip 1 and the thickness of the substrate 5 at the end of the thermocompression bonding process. Thickness of the electrode 4 and the electrodes 2 and 4
The thickness t2 of the insulating bonding resin 3 sandwiched therebetween is larger than the total dimension t4 and is larger than the particle size R1 of the electrode corrosion promoting substance 10 so that the electrode corrosion promoting substance 10 is included in the IC chip 1 The insulating bonding resin 3 and the insulating bonding resin 3 can smoothly flow out from the gap between the opposing surfaces of the substrate 5 and the substrate 5. Therefore, the height of the gap is controlled to be equal to or more than a predetermined height (specifically, the total size of the thickness t1 of the bump electrode 2 of the IC chip 1 and the thickness t3 of the electrode 4 of the substrate 5) and the initial pressure is applied. The pressure in the process is set to a predetermined pressure (specifically,
It is necessary to control the pressure to be equal to or lower than the pressure at which the predetermined height can be maintained.

As an example of the conditions of the initial pressing step,
When the composition decomposition temperature T1 and the maximum temperature T2 are set, heating is started at a temperature lower than 170 ° C., which is the composition decomposition temperature T1,
The temperature is gradually raised so that the initial pressurizing step can be completed at around 170 ° C. By heating in this manner, the fluidity of each composition particle contained in the insulating bonding resin 3 is increased, and the electrode corrosion promoting substance 10 is made to flow easily.

In the thermocompression bonding step, after the initial pressing step,
The IC chip 1 and the substrate 5 are moved relative to each other at a pressure equal to or higher than the pressure in the initial pressurizing step, and the I
A plurality of electrodes 2 of the C chip 1 and a plurality of electrodes 4 of the substrate 5
Are contacted with each other via the conductive particles in the insulating bonding resin 3, and the insulating bonding resin 3 is heated and cured at a temperature higher than that in the initial pressurizing step, and the IC The IC chip 1 and the substrate 5 are bonded and fixed in a state where the electrodes 2 of the chip 1 and the electrodes 4 of the substrate 5 are in contact with each other via conductive particles. When the respective electrodes 2 of the IC chip 1 and the respective electrodes 4 of the substrate 5 are brought into contact with each other, the respective electrodes 2 of the IC chip 1 and the respective electrodes 4 of the substrate 5 are respectively insulated and bonded. The electrodes 2 and 4 are surely brought into contact with each other by indirectly contacting them via the conductive particles in the resin 3.

As an example of the conditions of the thermocompression bonding process, the heating temperature higher than 170 ° C. reached in the initial pressing process is 2
The insulating bonding resin 3 is completely cured by heating at a high temperature of 20 ° C.

The electrode corrosion promoting substance 10 is, for example, C
It is an N-based substance and easily absorbs water in the composition in the insulating bonding resin 3, and at least one of the electrode 2 of the IC chip 1 and the electrode 3 of the flexible substrate 5 If the electrodes of are made of gold,
It is a substance that corrodes the gold electrode.

Here, in the commercially available ACF, generally,
A bisphenol A glycidyl ether type epoxy resin is used as an epoxy resin forming a continuous layer,
Conductive particles having an average particle size of about 3 to 5 μm (which generally has a very narrow particle size distribution and can be regarded as individual conductive particles having substantially the same particle size as the average particle size). , 2-
Mean imidazole average particle size is about 3-10 μm
As a raw material component, a granular material such as a curing agent for Acrylonitrile Co., Ltd., an additive having an average particle size of about 3 to 10 μm and another additive having an average particle size of about 3 to 10 μm made of an acrylic modified epoxy resin Has been done. Therefore, the gap G1 between the adjacent bump electrodes should be about 10 μm.
In that case, the conductive particles having a relatively small particle size can pass through the space between the adjacent bump electrodes, but the particles having a particle size equal to or larger than the gap G1 among the curing agent and the additive have voids 20. It can become a neck and get stuck there. In this state, if the epoxy resin is exposed to a hot atmosphere to be thermally cured to form a cured epoxy resin, the components derived from the curing agent and the additive are voids 2 of the insulating bonding resin 3.
At 0, there is more than at other regions. As a result,
The composition of the obtained insulating bonding resin 3 becomes inhomogeneous in the direction along the substrate surface.

In the commercially available ACF, the bisphenol A glycidyl ether type epoxy resin used as the epoxy resin as the main ingredient and the acrylic modified epoxy resin used as one of the additives are both about 0.
It has an equivalent saturated water supply rate of 05 to 0.08%. On the other hand, the saturated water absorptions of 2-methylimidazole and acrylonitrile copolymer used as a curing agent and another additive are about 0.4% and about 0.3%, respectively. It is higher than the saturated water absorption of resin (including acrylic modified). The water absorption of 2-methylimidazole is due to the fact that there is only one methyl group, which is a hydrophobic group, per molecule, and the water absorption of the acrylonitrile copolymer is hydrophilic. It is considered that this is because many cyano groups (-CN), which are groups, exist in one molecule. The saturated water supply rate means a value measured according to ASTM D-570, and is roughly a raw material having a size of 10 mm × 50 mm × 1 mm which is substantially in equilibrium under normal temperature and pressure conditions. It is determined by determining the percentage increase in weight of the component test piece when immersed in water at a temperature of 23 ° C. for 24 hours.

Further, neither the bisphenol A glycidyl ether type epoxy resin nor the acrylic modified epoxy resin decomposes in the temperature range of 300 ° C. or lower, whereas 2-methylimidazole has a decomposition temperature of about 198 ° C. The acrylonitrile copolymer has a decomposition temperature of about 185 ° C. The thermocompression bonding is generally about 180 in consideration of the curing temperature of the epoxy resin and the heat resistant temperature of the IC chip.
It is carried out at ˜230 ° C., and at this thermocompression bonding temperature, the bisphenol A glycidyl ether type epoxy resin and the acrylic modified epoxy resin do not decompose. On the other hand, the 2-methylimidazole and acrylonitrile copolymer are sometimes decomposed during thermocompression bonding to generate an ionic substance in the insulating bonding resin 3. Since the ionic substance that is a decomposition product has polarity, it is considered to have high hydrophilicity and therefore high water absorption.

Therefore, when the 2-methylimidazole and / or acrylonitrile copolymer is present in the insulating bonding resin 3 as it is without being decomposed, due to the original high water absorption of these raw material components, Void 20 mentioned above
Is considered to be a corrosive environment in which moisture can be easily trapped as compared with other regions of the insulating bonding resin 3. Further, when these decompose to generate an ionic substance, the void 20 described above is caused by the high water absorption of the ionic substance.
It is considered that the corrosive environment is more likely to trap moisture than other regions of the insulating bonding resin 3.

In summary, the formation of a corrosive environment in the insulating bonding resin 3 is considered to go through the following two stages. (1) Particles of raw material components are clogged in the space between the electrode pair;
And (2) due to the original height of water absorption of the material of the raw material component constituting the particles clogged in the space and / or the high water absorption of its decomposition product, a corrosive environment is created at that location. Form.

The corrosive environment formed through the above two steps traps more moisture in the voltage application test under the high temperature and high humidity condition and causes corrosion of the bump electrode 2, while trapping in the corrosive environment. The water content is
It is considered that because of its relatively high dielectric constant, it functions as a current path between the bump electrodes 2 and may cause a short circuit failure. That is, it is considered that the short circuit between the adjacent electrode pairs, which occurs in the voltage application test under the high temperature and high humidity condition, is caused by the above-mentioned corrosive environment being formed in the vicinity of the space between the electrode pairs.

Therefore, the electrode corrosion-promoting substance 10 is a substance capable of trapping moisture as described above, and the substance itself or another substance utilizes the moisture trapped in the corrosive environment to form an electrode. Means a substance that attacks and causes corrosion. As an example, the CN
The base substance is a substance capable of trapping moisture as described above, and the substance itself is a substance which attacks the electrode by utilizing the moisture trapped in the corrosive environment and causes corrosion. is there.

As an example, the thickness of the IC chip is 0.4 μm.
m, the thickness of the gold bump electrode of the IC chip is 15 μm, A
The thickness of CF is 40 μm, and C on the flexible circuit board 5 side
When the thickness of the u-Ni (or Cu-Au) electrode is 12 μm, the gap between the opposing surfaces of the IC chip and the substrate in the initialization pressure step is 15 μm + 12 μm = 27 μm. In this case, in the initial pressurizing step, when the component-side electrode and the substrate-side electrode are brought into direct contact with each other without interposing conductive particles, which will be described later, while maintaining the gap of 27 μm or more, When the component-side electrode and the substrate-side electrode are indirectly contacted with each other with the insulating bonding resin 3 interposed therebetween as in the embodiment described above, the final gap dimension 2 at the end of the thermocompression bonding step 2
The size is larger than 9 to 30 μm. At this time, the particle diameter R1 of the electrode corrosion accelerating substance 10 is 10 and several μm (for example, 15 μm), and the electrode corrosion accelerating substance 10 can sufficiently flow out of the gap 30 to the outside of the gap.

The pressure control in the steps from the initial pressure step to the thermocompression step is any one of temperature control, pressure control, and height control, or a combination of temperature control and pressure control, Alternatively, it can be performed by a combination of temperature control and height control.

First, the temperature control can be performed as follows.

When each composition decomposition temperature T1 and maximum temperature T2 are set, T1 + 50 ° C.> T2. In other words, the temperature obtained by adding 50 ° C. to the heating temperature T1 in the initial pressing step is set to be higher than the heating temperature T2 in the thermocompression bonding step.

As shown in FIG. 4, in the temperature profile of two or more stages, the heating temperature T3 in the initial pressurizing step is made substantially equal to each composition decomposition temperature T1. The temperature reached in the thermocompression bonding process is T2. At this time, the rate of temperature rise per unit time, that is, the rate of temperature rise, is V1 up to the composition decomposition temperature T1.
(° C / sec) and V2 (° C / s
ec), V2> V1. That is, the temperature rising rate V2 in the thermocompression bonding step is equal to the temperature rising rate V in the initial pressurizing step.
It should be greater than 1. Temperature control is performed during pressure bonding so as to maintain the above relationship.

Next, the pressurization control can be performed as follows.

Crimping tool 15 up to the composition decomposition temperature T1
Let W1 be the descending speed of, and W2 be the descending speed of the crimping tool 15 up to the reached temperature T2, then W2> W1.
That is, the lowering speed W of the crimping tool 15 in the thermocompression bonding process
2 is set to be higher than the descending speed W1 of the crimping tool 15 in the initial pressing step.

Crimping tool 15 up to the composition decomposition temperature T1
When the load acting on the IC chip side is P1 and the load acting on the IC chip side by the pressure bonding tool 15 up to the reached temperature T2 is P2, P2> P1. That is, the load P2 by the crimping tool 15 in the thermocompression bonding process
Is larger than the load P1 applied by the crimping tool 15 in the initial pressing step.

The crimping tool 15 is lowered and the load is controlled during crimping so that the descending speed and the load relationship are maintained.

Next, the height control can be performed as follows.

Let R1 be the particle diameter of each component of the insulating bonding resin 3, especially the particle diameter of the electrode corrosion promoting substance, the height of the bump electrode 2 of the IC chip 1 be t1, and the height of the electrode 4 on the substrate side. When t3 is set, (t1 + t3)> R1. In order to maintain the above relationship, the crimping tool 15 is lowered and the load is controlled during crimping.

According to the above embodiment, the IC chip 1 is
Of the electrodes 2 and the electrodes 4 of the substrate 5 with the insulating bonding resin 3 interposed therebetween to bring the IC chip 1 and the substrate 5 relatively close to each other. An electrode corrosion promoting substance 10 capable of corroding the contained electrode 2 or 4 is passed through a gap between the IC chip 1 and the substrate 5 to join the IC chip 1 and the substrate 5 (for example, between the electrodes 2 and 4). The joint resin 3 is made to flow smoothly together with the joint resin 3 in a direction away from the joint portion). As a result, the electrode corrosion accelerating substance 10 is reduced in the joint portion between the IC chip 1 and the substrate 5, and the corrosion due to the electrode corrosion accelerating substance 10 can be made less likely to occur.

In the initial pressing step, the above IC
By slowly pressing the electrodes 2 of the chip 1 and the electrodes 4 of the substrate 5 with the insulating bonding resin 3 interposed therebetween, between the opposing surfaces of the IC chip 1 and the substrate 5. The electrode corrosion accelerating substance 10 contained in the insulating bonding resin 3 is ensured to flow easily from the gap 30 to facilitate the smooth flow of the electrode corrosion accelerating substance 10, and the IC chip 1 and the substrate 5 are It is possible to maintain a substantially uniformly dispersed state even in the gap 30 between the two facing surfaces. As a result, the electrode corrosion accelerating substance 10 is small in the gap 30 between the opposing surfaces of the IC chip 1 and the substrate 5, and the electrode corrosion accelerating substance 10 is not locally deviated and concentrated, and is substantially uniform. Can be in a dispersed state. Therefore, as in the conventional case, the electrode corrosion accelerating substance 10 causes the adjacent bump electrodes 2 and 2 of the IC chip 1 to be separated.
The phenomenon that electrode corrosion is likely to occur due to the presence of localized unevenness between the electrodes can be prevented by the component joined body formed by the component joining method according to the present embodiment.

The present invention is not limited to the above embodiment, but can be implemented in various other modes.

For example, as shown in FIG. 5 and FIG. 6, the component outside region thermosetting for heating and curing the insulating bonding resin 3 flowing outward from between the IC chip 1 and the flexible substrate 5 is performed. You may make it provide a process.
That is, at the time of pressure bonding, the IC chip 1 of the insulating bonding resin 3
Is heated by hot air or the like to accelerate the curing of the insulating bonding resin 3 protruding from the IC chip 1 (for example, four sides in the case of the rectangular IC chip 1). Prevent ingress of water. Alternatively, after the pressure bonding, the portion 3A of the insulating bonding resin 3 that protrudes all around the IC chip 1 is heated by hot air or the like to accelerate the curing of the insulating bonding resin 3A that protrudes from the IC chip 1. As a result, the electrode corrosion promoting substance 10 is prevented from freely moving in the uncured insulating bonding resin 3, and
Water can be prevented from entering the gap 30 from the outside.

Further, the electrode 2 of the IC chip 1 is not limited to gold, but other metals such as tin can be applied to the present invention to obtain the above-described effects.

As the insulating bonding resin 3, A
Not limited to CF, the electrodes 2 and the substrate 5 of the IC chip 1 are made of an insulating resin containing no conductive particles.
The electrodes 4 may be directly contacted with each other.

By properly combining the arbitrary embodiments of the aforementioned various embodiments, the effects possessed by them can be produced.

[0053]

According to the present invention, the components and the substrate are relatively brought close to each other by interposing the insulating bonding resin between the electrodes of the component and the electrodes of the substrate. The electrode corrosion-promoting substance contained in the bonding resin and capable of corroding the electrode is smoothly flowed together with the bonding resin in a direction away from the bonding portion between the component and the substrate through the gap between the component and the substrate. I am trying. As a result, the electrode corrosion accelerating substance is reduced in the joint portion between the component and the substrate, and the corrosion due to the electrode corrosion accelerating substance can be suppressed.

Further, according to the present invention, in the initial pressurizing step, the electrodes of the component and the electrodes of the substrate are slowly pressed through the insulating bonding resin. , Through the gap between the opposing surfaces of the component and the substrate, to ensure a state in which the electrode corrosion promoting substance contained in the insulating bonding resin easily flows, to facilitate smooth outflow of the electrode corrosion promoting substance, It is possible to maintain a substantially uniformly dispersed state even in the gap between the facing surfaces of the component and the substrate. As a result, in the gap between the facing surfaces of the component and the substrate, there is little electrode corrosion promoting substance, and the electrode corrosion promoting substance is not locally concentrated in a localized manner and is almost uniformly dispersed. can do. Therefore, the phenomenon in which the electrode corrosion accelerating substance easily occurs due to the presence of the electrode corrosion accelerating substance which is sandwiched between the adjacent bump electrodes of the component and locally unevenly formed by the component bonding method according to the present invention is formed. This can be prevented by the joined parts assembly.

[Brief description of drawings]

FIG. 1 is an IC chip, a flexible substrate, and an ACF before joining in a component joining method according to an embodiment of the present invention.
It is a process drawing showing the state of.

FIG. 2 is a process diagram showing a state of an IC chip, a flexible substrate, and an ACF during joining in the component joining method.

FIG. 3 is a process diagram showing a state of an IC chip, a flexible substrate, and an ACF after joining in the component joining method.

FIG. 4 is a graph showing pressure control in the component joining method.

FIG. 5 is a schematic side view showing a state of an IC chip and a flexible substrate via an ACF after joining in the component joining method.

FIG. 6 is a schematic plan view showing a state of an IC chip and a flexible substrate via an ACF after joining in the component joining method.

FIG. 7 is an explanatory diagram for explaining a conventional bonding failure state.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... IC chip, 2 ... IC chip side electrode, 3 ... Insulating bonding resin, 3A ... Part which protrudes entirely, 4 ... Board side electrode, 5 ... Flexible board, 6 ... Resist, 10 ... Electrode corrosion promoting substance , 15 ... Crimping tool, 16 ... Stage.

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Kazuo Kubota             1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric             Sangyo Co., Ltd. (72) Inventor Naoshi Akiguchi             1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric             Sangyo Co., Ltd. F-term (reference) 5E319 AA01 AC01 BB16 CC61 CD26                       GG20

Claims (9)

[Claims] 1. A component (1) and a substrate (5) are arranged via an insulating bonding resin (3), and then the component and the substrate are brought close to each other via the bonding resin to make the component In a component bonding method of bonding a plurality of electrodes (2) and a plurality of electrodes (4) of the substrate to bond the component and the substrate, the component and the substrate are relatively brought close to each other, and A step of flowing an electrode corrosion-promoting substance contained therein, which can corrode the electrode, together with the bonding resin in a direction away from a joint between the component and the substrate through a gap (10) between the component and the substrate; The component and the substrate are brought relatively close to each other, the plurality of electrodes of the component are brought into contact with the plurality of electrodes of the substrate to bond the component and the substrate, and the bonding resin is heated and cured. Let's do the above Component bonding method characterized by while in contact electrode and a plurality of electrodes of the substrate was set to and a step of bonding the above components and the substrate. 2. The component (1) and the substrate (5) are arranged via an insulating bonding resin (3), and then the component (1) and the substrate (5) are bonded via the insulating bonding resin. And a plurality of electrodes (2) of the component and a plurality of electrodes (4) of the substrate are brought into contact with each other to join the component (1) and the substrate (5). Immediately after the relative approach of the component and the substrate is started, the insulating bonding resin may flow and be sandwiched between the adjacent electrodes after being bonded and included in the insulating bonding resin to corrode the electrode. An initial pressurizing step in which the electrode corrosion promoting substance (10) flows outward from the gap (30) between the component (1) and the substrate (5) together with the insulating bonding resin, and after the initial pressurizing step, The component and the substrate at a pressure higher than the pressure in the initial pressurizing step. Are further moved to bring the plurality of electrodes (2) of the component into contact with the plurality of electrodes (4) of the substrate, respectively, and to perform the insulating bonding at a temperature higher than that in the initial pressing step. The resin (1) and the substrate (5) are heated and cured to bring the plurality of electrodes (2) of the component into contact with the plurality of electrodes (4) of the substrate, respectively. And a thermocompression bonding step for bonding the components. 3. The component outside region thermosetting step of heating and curing the insulating bonding resin (3A) flowing outward from between the component and the substrate.
Alternatively, the component joining method according to item 2. 4. The anisotropic bonding resin (3) is an anisotropic conductive sheet or an anisotropic conductive paste in which conductive particles are contained in the insulating resin. The method of joining the described parts. 5. The component joining method according to claim 1, wherein in the thermocompression bonding step, heating is performed so that a temperature rising rate per unit time is higher than that in the initial pressing step. 6. The component joining method according to claim 1, wherein a pressure applied in the thermocompression bonding step is higher than a pressure applied in the initial pressure applying step. 7. The gap (30) between the component and the substrate with the insulating bonding resin interposed in the initial pressing step is at least the thickness of the electrode of the component. And the total thickness of the electrodes of the substrate, which is greater than the total dimensions of the thickness of the electrodes of the component and the thickness of the electrodes of the substrate at the end of the thermocompression bonding step, and the electrodes The component joining method according to any one of claims 1 to 6, which has a particle size larger than that of the corrosion promoting substance. 8. The electrode corrosion accelerating substance is a CN-based substance, and at least one of the electrode of the component and the electrode of the substrate is gold. The method of joining parts according to. 9. A component joined body formed by joining the component and the substrate by the component joining method according to claim 1. Description: