JP2003179260A5 - - Google Patents
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- Publication number
- JP2003179260A5 JP2003179260A5 JP2002320954A JP2002320954A JP2003179260A5 JP 2003179260 A5 JP2003179260 A5 JP 2003179260A5 JP 2002320954 A JP2002320954 A JP 2002320954A JP 2002320954 A JP2002320954 A JP 2002320954A JP 2003179260 A5 JP2003179260 A5 JP 2003179260A5
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- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002320954A JP4085782B2 (ja) | 2002-11-05 | 2002-11-05 | 窒化物半導体素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002320954A JP4085782B2 (ja) | 2002-11-05 | 2002-11-05 | 窒化物半導体素子 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27394899A Division JP3460641B2 (ja) | 1999-09-28 | 1999-09-28 | 窒化物半導体素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003179260A JP2003179260A (ja) | 2003-06-27 |
| JP2003179260A5 true JP2003179260A5 (ja) | 2006-11-16 |
| JP4085782B2 JP4085782B2 (ja) | 2008-05-14 |
Family
ID=19197591
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002320954A Expired - Fee Related JP4085782B2 (ja) | 2002-11-05 | 2002-11-05 | 窒化物半導体素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4085782B2 (ja) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE112005000296B4 (de) | 2004-02-24 | 2015-10-15 | Toyoda Gosei Co., Ltd. | Galliumnitrid-Verbindungshalbleiter-Mehrschichtstruktur, Lampe damit und Herstellungsverfahren dafür |
| JP2006013463A (ja) * | 2004-05-21 | 2006-01-12 | Showa Denko Kk | Ｉｉｉ族窒化物半導体発光素子 |
| JP5201563B2 (ja) * | 2004-11-16 | 2013-06-05 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体発光素子 |
| KR100780212B1 (ko) | 2006-03-30 | 2007-11-27 | 삼성전기주식회사 | 질화물 반도체 소자 |
| KR101283233B1 (ko) | 2007-06-25 | 2013-07-11 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
| JP2010182993A (ja) * | 2009-02-09 | 2010-08-19 | Toyota Central R&D Labs Inc | 半導体装置とその製造方法 |
| JP2011159771A (ja) * | 2010-01-29 | 2011-08-18 | Nec Corp | 窒化物半導体発光素子、窒化物半導体発光素子の製造方法、および電子装置 |
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2002
- 2002-11-05 JP JP2002320954A patent/JP4085782B2/ja not_active Expired - Fee Related