JP2003178920A - Method of manufacturing thin film magnetic element - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing thin film magnetic element by which a multilayered film formed by laminating soft magnetic films formed by the sputtering method upon another can be patterned with accuracy even when the thickness of the multilayered film increases, and can prevent the occurrence of eddy current losses or leakage magnetic fluxes caused by lowered patterning accuracy. <P>SOLUTION: The method of manufacturing the thin film magnetic element having the multilayered film formed by laminating soft magnetic films formed by the sputtering method upon another includes a step of forming a resist pattern 12 on a substrate 10, a step of giving roundness 12i to the corners of the pattern 12 by post-baking the pattern 12, and a step of forming plated layers 13 for lift-off on the corners of the pattern 12 having the roundness 12i. The method also includes at least a step of removing the pattern 12, a step of forming the multilayered film by successively laminating the soft magnetic films on the portion of the substrate 10 from which the pattern 12 is removed by the sputtering method, and a step of removing the plated layers 13. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a thin film magnetic element used for a power source thin film inductor, a transformer and the like, and more particularly to a thin film magnetic film using a multilayer film formed by laminating soft magnetic films formed by a sputtering method. The present invention relates to a method of manufacturing an element.

[0002]

2. Description of the Related Art Information and communication electronic devices represented by mobile phones have rapidly become widespread due to their small size and light weight, and their portability and long operating time. As the size and weight of information and communication electronic devices have become smaller and the performance has increased, the demand for power sources that are power supply sources has increased, and there has been a demand for smaller size and higher performance of thin film inductors, which are energy storage elements of switching power sources. ing.

In order to reduce the size and improve the performance of the thin film inductor, the thin film inductor has a high magnetic permeability and a high specific resistance.
e-MO soft magnetic film (M is a rare earth element or T
i, Zr, Hf, V, Nb, Ta, or W) is used. FIG. 8 is a cross-sectional view showing an example of a conventional thin film inductor using the above-mentioned soft magnetic film having high magnetic permeability and high specific resistance. FIG. 9 is a plan view showing a first multilayer film of this thin film inductor.
FIG. 10 is a plan view showing a coil layer of this thin film inductor. In this thin film inductor, a first multilayer film 31 is formed on a substrate 30, a spiral coil layer 40 is formed on the first multilayer film 31 via a first insulating layer 35, and a coil layer is further formed. The second multilayer film 51 is formed on the second multilayer film 51 via the second insulating layer 36, and the third insulating layer 37 is further formed on the second multilayer film 51.

The first and second multilayer films 31 and 51 are formed by alternately stacking a plurality of Fe-M-O based soft magnetic films and high resistance non-magnetic insulating films. The first multilayer film 31 is divided into four as shown in FIG. 9, and a slit 31a is formed between adjacent multilayer films. The second multilayer film 51 is also divided into slits in the same manner as the first multilayer film 31. The slits are formed in the first and second multilayer films 31 and 51 to reduce the eddy current loss in the soft magnetic film. Also, the first
The multilayer film 31 is formed to be larger than the coil layer 40 in order to reduce the leakage magnetic flux from the coil layer 40 and to prevent the generation of an eddy current due to the magnetic flux passing through the coil layer 40, that is, The inner part 31d of the first multilayer film 31 is formed to a position inside the winding start part 40d inside the coil layer 40, and the outer part (peripheral part) 31e of the first multilayer film 31 is wound outside the coil layer 40. It is formed to an outer position from the end portion (outer portion of the coil layer) 40e.

Further, the second multilayer film 51 is also the first multilayer film 3
For the same reason as in No. 1, the coil layer is formed larger than the coil layer 40. A portion of the first multilayer film 31 and the second multilayer film 51 that is larger than the coil layer 40 is called an overhang portion. The central portion 40h of the coil layer 40 is electrically connected to the first external electrode (not shown) via the electrode 61, and the electrode extraction portion 40i at the outer portion of the coil layer 40 is provided via the electrode (not shown). And is electrically connected to a second external electrode (not shown). First, second and third insulating layers 35, 36, 3
7 is made of a material such as a thermosetting resist.

Since the value of the inductance (L) of the thin film inductor depends on the number of interlinkage magnetic fluxes and the conductor length of the coil layer, in the case of a thin film inductor having a magnetic layer, an increase in interlinkage magnetic flux results in an air-core coil. Even if the conductor length of the coil layer is shorter than that of the (coil without magnetic layer), the same inductance can be obtained. Therefore, the thin film inductance can be miniaturized. Further, by using the magnetic layer having a high specific resistance (ρ), it is possible to prevent the eddy current loss which is a cause of the decrease in the magnetic permeability in the high frequency region. Therefore, it is possible to improve the performance of the thin film inductor.

The conventional method of manufacturing a thin film inductor having the above-described structure has been carried out, for example, in the following steps. First, as shown in FIG. 11, a plurality of Fe—MO based soft magnetic films and SiO ₂ insulating films are alternately laminated on a substrate 30 by a sputtering method to form a multilayer film 31c, and then, on the multilayer film 31c. A resist pattern 38 is formed on the substrate, and the portion not covered with the resist pattern 38 is etched. As the etching solution used here, the Fe-MO soft magnetic film is difficult to dissolve in acids other than HF, and SiO ₂
Since it is not soluble unless it is an HF-based acid, a mixed solution of HF and H ₂ O ₂ is used.

Then, the resist pattern is removed to form a first multilayer film 31 having slits 31a. Then, the first insulating layer 3 that covers the substrate 30 and the first multilayer film 31.
5 is formed by means such as spin coating. Then,
After forming a base layer made of a titanium film (not shown) and the same metal film (not shown) as the coil layer on the first insulating layer 35 by a sputtering method, a resist pattern for forming a coil layer is formed on the base layer. Then, the coil layer 40 is formed by a pattern plating method in which a plating is grown in a coil shape by applying a current to the underlayer. Then, the resist pattern for forming the coil layer is peeled off, and the excess underlying layer exposed between the coil layers 40 is removed by etching. Then, the coil layer 40 and the first insulating layer 3
The second insulating layer 36 that covers 5 is formed in the same manner as the method for forming the first insulating film 35. Then, the second multilayer film 51 is formed on the second insulating film 36 in the same manner as the method for forming the first multilayer film 31. Finally, the third insulating layer 37 covering the second insulating layer 36 and the second multilayer film 51 is formed into the first insulating film 35.
It may be formed in the same manner as.

[0009]

By the way, in a thin film inductor using a magnetic layer, if the thickness of the magnetic layer is increased, the DC superposition characteristic can be improved. Therefore, a multilayer film in which a soft magnetic film and an insulating film are alternately laminated is provided. The total thickness of the soft magnetic film inside is increased. However, when the thickness of the multilayer film is about 4.5 μm or more, when the multilayer film 31c is wet-etched in the step of forming the first multilayer film 31,
As shown in FIG. 12, the upper portion 31f of the multilayer film 31c (when the multilayer film 31c is etched, the resist pattern 38
(The part close to) becomes too big,
The shape and dimensions of the first multilayer film 31 having the design values shown by the dotted line A in FIGS. 8 and 12 cannot be obtained. Such over-etching also occurs when forming the second multilayer film 51. When the above-described overetching occurs in the multilayer film, the obtained first and second multilayer films 3
The widths of the overhang portions O of Nos. 1 and 51 become narrow, and the magnetic fluxes that should be interlinked at the overhang portions O as shown in FIG. However, as shown in FIG. 14, an eddy current is actually generated, an eddy current is generated through the coil layer 40, or a magnetic flux leaks to the outside, resulting in a decrease in inductance. Note that the overetching here is sometimes called side etching. In FIG. 13 and FIG. 14, reference symbol M indicates an interlinkage magnetic flux, M1 indicates a magnetic flux passing through the coil layer, and M2 indicates a leakage magnetic flux.

Further, side etching occurs in a lower portion 31g of the multilayer film 31c (a portion far from the resist pattern 38 when the multilayer film 31 is etched), and thus the first design value shown by a dotted line A in FIG. The shape and size of the multilayer film cannot be obtained. Such side etching also occurs in the case of forming the second multilayer film 51. If the side etching as described above occurs in the first and second multilayer films 31 and 51, the leakage flux increases and the characteristics of the thin film inductor deteriorate. Further, when the multilayer film 31c is wet-etched, the resist pattern 38 and the underlying layer of the multilayer film 31c may be damaged by HF in the etching solution. In that case, the patterning accuracy of the multilayer film 31c is lowered and The dimensional accuracy of the obtained first multilayer film 31 is deteriorated, and the characteristics of the thin film inductor are deteriorated. Such a problem similarly occurs when the second multilayer film 51 is formed.

The above-mentioned over-etching and side-etching of the multilayer film 31c is caused by the etching solution H.
Since a mixed solution of F and H ₂ O ₂ is used, Fe-M
This is because the -O-based soft magnetic film is etched faster than the insulating film. Further, when the above-described over-etching or side-etching occurs, the width of the slit 31a between the first multilayer films 31 and the slit width 5 between the second multilayer films 51.
When the width of 1a is larger than the design value, the leakage magnetic flux becomes large and the characteristics of the thin film inductor deteriorate. The leak magnetic flux is generated here because the soft magnetic film is not formed in the slit, and the leak magnetic flux increases as the slit width increases. In addition, the slits 31a, 51a
As described above, since it is for reducing the eddy current loss in the soft magnetic film, it suffices that the soft magnetic film is cut. Therefore, the slit width is preferably narrow. The first and second multilayer films 31 and 51 may be composed of a laminated film of Fe-MO soft magnetic films, and in that case also, side etching is performed when patterning the laminated film. And the problem of resist pattern deterioration occurs. Further, since the above Fe-MO soft magnetic film cannot be formed by frame plating and can be formed only by a sputtering method or a vapor deposition method, patterning is performed by wet etching. The above problems occur.

The present invention has been made in view of the above circumstances, and in a method of manufacturing a thin film magnetic element using a multilayer film in which soft magnetic films formed by a sputtering method are laminated, the thickness of the multilayer film is increased. However, it is an object of the present invention to provide a method of manufacturing a thin film magnetic element having excellent characteristics, which enables accurate patterning during patterning, can improve eddy current loss and leakage flux generation due to a decrease in patterning accuracy.

[0013]

In order to achieve the above object, the present invention has the following constitutions. The method for producing a thin film magnetic element of the present invention is a method for producing a thin film magnetic element in which a multilayer film is formed on at least one of a coil layer and a coil layer, and a soft magnetic film formed by a sputtering method via an insulating layer. Then, the manufacturing process of the multilayer film includes a step of forming a resist pattern on a substrate, a step of post-baking the resist pattern to form roundness at corners of the resist pattern, a gap between the resist patterns, and A step of forming a lift-off plating layer on the rounded corners of the resist pattern on both sides of the gap, a step of removing the resist pattern, and a soft magnetic film on the substrate where the resist pattern is removed by sputtering. At least, and a step of removing the lift-off plating layer.

In the method of manufacturing such a thin film magnetic element,
After post-baking the resist pattern formed on the substrate to form roundness at the corners of the resist pattern, lift-off plating is applied to the gaps between the resist patterns and the rounded corners of the resist pattern on both sides of the gap. When the layer is formed, a portion of the lift-off plating layer, which is on the corner portion having the curved surface of each resist pattern, becomes a concave portion having a curved surface corresponding to the contour of the curved surface of the resist pattern.

After that, when the resist pattern is peeled off and removed, a lift-off plating layer having concave portions having curved surfaces on both sides of the lower portion is obtained, and the portion of the substrate from which the resist pattern has been removed is sputtered to form a soft magnetic layer. When a film is formed and laminated to form a multilayer film, the sputtered particles also enter the underside of the recess having the curved surface of the lift-off plating layer, and the end face of the multilayer film is formed into a shape that generally conforms to the shape of this recess. Therefore, the patterning can be performed accurately, and since wet etching is not performed, the occurrence of over-etching and side-etching in the multilayer film can be improved, and the thickness of the multilayer film can be formed substantially uniform. After this, the lift-off plating layer is removed. However, since there is a slight gap between the multilayer film formed in the above step and the recess of the lift-off plating layer, the lift-off plating layer is not damaged. Can be removed, and the slits can be accurately formed between the multilayer films.

According to the method of manufacturing such a thin film magnetic element,
Since the multilayer film in which the soft magnetic film formed by the sputtering method is laminated is not obtained by patterning by wet etching, it is obtained by patterning by the lift-off plating layer formed on the substrate,
It is possible to improve the occurrence of side etching and over etching during patterning, to accurately pattern the multilayer film, and to improve the dimensional accuracy of the width of the slit formed between the multilayer films and the width of the overhang portion of the multilayer film. Can improve
It is possible to prevent the generation of eddy currents and leakage magnetic flux due to side etching and over etching, and to prevent the inductance from decreasing and the loss from increasing. Further, the patterning of the multilayer film is
Since the patterning by wet etching is not used, the resist pattern and the underlying layer of the multilayer film are not damaged by the etching solution, and the dimensional accuracy of the multilayer film and the quality of the thin film magnetic element can be prevented. Therefore, according to the method for manufacturing a thin-film magnetic element of the present invention, even if the thickness of the multilayer film in which the soft magnetic films formed by the above-mentioned sputtering method are stacked is increased, the multilayer film can be accurately patterned and low loss occurs. It is possible to manufacture a thin film magnetic element which has a high inductance and has excellent characteristics.

As the resist used for the resist pattern, a novolac resin type resist or the like is preferably used. The method of manufacturing a thin-film magnetic element of the present invention is the method of manufacturing a thin-film magnetic element described above, wherein the post-baking in the step of forming roundness (curved surface) at the corner of the resist pattern is 150 ° C. (423K). ) Or less, and preferably 300 seconds or less, more preferably 120 ° C. (3
93K), about 30 seconds.

When the post-baking is performed here, it is preferable that the resist pattern is not excessively hardened and that the corners of the resist pattern are not too rounded. The temperature during post-baking is related to the hardening of the resist pattern. When the resist used for the resist pattern is a novolac resin-based resist, the temperature during post baking is 1
If the temperature exceeds 50 ° C, almost all the resist will be cured. The curing of the resist pattern here means not only a resist pattern using a thermosetting resist containing a curing agent, but also a resist pattern changing in a resist pattern using a normal resist containing no curing agent. It is difficult to peel the resist pattern from the substrate.

Further, the roundness applied to the corners of the resist pattern is related to the temperature and time during the post-baking. The higher the temperature, the higher the fluidity of the resist (the lower the viscosity). Therefore, the time for post-baking depends on the temperature, but as the time increases, the solvent in the resist evaporates and the viscosity of the resist gradually increases. Therefore, even if the post-baking is performed for an extremely long time, the change in the resist shape is reduced. Therefore, when the post-baking time is 300 seconds or more, the resist pattern shape hardly changes, which is economically disadvantageous. From these, the post bake in the step of forming the roundness at the corners of the resist pattern is performed at 150 ° C. (4
23K) or less and 300 seconds or less are preferable.

The method of manufacturing a thin film magnetic element of the present invention is the method of manufacturing a thin film magnetic element described above, wherein the resist pattern is formed on the substrate in the step of forming the resist pattern on the substrate. The adhesion improving layer is formed on the laminated film of the adhesion improving layer and the same material film as the lift-off plating layer, and the resist pattern is removed between the step of removing the resist pattern and the step of forming the multilayer film. And a step of removing a laminated film of the lift-off plating layer and the same material film as the lift-off plating layer, and in the step of removing the lift-off plating layer, the lift-off plating layer, an adhesion improving layer thereunder, and the lift-off plating layer It is characterized in that the laminated film with the same material film as is removed.

The adhesion improving layer has good adhesion to the substrate and the same material film as the lift-off plating layer. As the adhesion improving layer, for example, when the same material film as the lift-off plating layer is a Cu film (in this case, the lift-off plating layer is a Cu plating film).
A titanium film, a tungsten film, a chromium film, a platinum film or the like is appropriately selected and used. Here, the adhesion improving layer is formed between the substrate and the resist pattern because the adhesion improving layer has good adhesiveness with the same material film as the substrate and the relift-off plating layer. This is because it is difficult for the laminated film including the plating layer and the same material film to peel off from the base.

Further, the same material film as that of the lift-off plating layer is formed because the same material as the material of the lift-off plating layer is formed as the base of the lift-off plating layer, thereby improving the adhesion improving layer. This is because the lift-off plating layer can be easily formed on the laminated film having the same material film as the lift-off plating layer, and the adhesion between the laminated film and the lift-off plating layer can be improved.

The method of manufacturing a thin film magnetic element according to the present invention is the method of manufacturing a thin film magnetic element described above, wherein the adhesion improving layer and the lift-off plating layer in the portion where the resist pattern is removed are formed. In the step of removing the laminated film of the same material film and the step of removing the laminated film of the lift-off plating layer, the adhesion improving layer below the lift-off plating layer, and the lift-off plating layer and the same material film, as an etching solution, It is characterized by using an aqueous solution containing ferric chloride or nitric acid.

When the lift-off plating layer is a Cu plating layer, by using an aqueous solution containing ferric chloride or an aqueous solution containing nitric acid as an etching solution, the adhesion improving layer in the portion where the resist pattern is removed is used. In the step of removing the laminated film of the lift-off plating layer and the same material film as the lift-off plating layer, the same material film as the lift-off plating layer can be removed, and the lift-off plating layer and the adhesion improving layer below the lift-off plating layer In the step of removing the laminated film including the lift-off plating layer and the same material film, both the lift-off plating layer and the lift-off plating layer can be removed. Incidentally, in the step of removing the laminated film of the adhesion improving layer in the portion where the resist pattern is removed and the same material film as the lift-off plating layer, the adhesion improving layer is removed by dry etching or the like, and In the step of removing the laminated film of the lift-off plating layer, the adhesion improving layer below the lift-off plating layer, and the film of the same material as the lift-off plating layer, the adhesion improving layer can be removed by, for example, dry etching.

Further, the method of manufacturing a thin film magnetic element of the present invention is the method of manufacturing a thin film magnetic element described above, wherein in the step of forming the multilayer film, a soft magnetic film formed by a sputtering method, It is characterized in that insulating films are alternately laminated to form a multilayer film.

The method of manufacturing a thin film magnetic element of the present invention is the method of manufacturing a thin film magnetic element described above, wherein the soft magnetic film formed in the step of forming the multilayer film is F
e as a main component, rare earth element or Ti, Zr, Hf,
It is characterized by being composed of a soft magnetic alloy consisting of O and one or more elements M selected from any of V, Nb, Ta and W. A soft magnetic film having such a composition has a high magnetic permeability and a high specific resistance. Therefore, when a thin film magnetic element is manufactured using a multilayer film in which soft magnetic films having such a composition are laminated, the magnetic permeability in a high frequency region is high. It is possible to prevent the eddy current loss that is one of the causes of the decrease in the magnetic field, and to provide a high-performance thin film magnetic element.

The method of manufacturing a thin film magnetic element of the present invention is the method of manufacturing a thin film magnetic element described above, wherein the soft magnetic film formed in the step of forming the multilayer film is C
o as a main component, one or more elements T selected from any of Fe, Ni, Pd, Mn, and Al as a main component, and further a rare earth element or Ti, Zr, H
It is characterized in that it is made of a soft magnetic alloy consisting of O and one or more elements M selected from f, Nb, Ta, Mo, W and Y. A soft magnetic film having such a composition has a high magnetic permeability and a high specific resistance. Therefore, when a thin film magnetic element is manufactured using a multilayer film in which soft magnetic films having such a composition are laminated, the magnetic permeability in a high frequency region is high. It is possible to prevent the eddy current loss that is one of the causes of the decrease in the magnetic field, and to provide a high-performance thin film magnetic element.

The method of manufacturing a thin film magnetic element according to the present invention is the method of manufacturing a thin film magnetic element described above, wherein the thickness of the multilayer film formed in the forming step is 4.
The feature is that the thickness is 5 μm or more. By setting the thickness of the multilayer film to 4.5 μm or more, the total thickness of the soft magnetic films in the multilayer film is increased, whereby a thin film magnetic element with improved DC superposition characteristics can be obtained. Wet etching is not performed at the time of patterning even if the thickness is 4.5 μm or more, it is possible to improve the occurrence of over-etching and side-etching, and the generation of eddy current and leakage flux due to over-etching and side-etching. And the effect of the present invention that the inductance can be prevented from decreasing and the loss from increasing can be prevented.

[0029]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of a method of manufacturing a thin film magnetic element according to the present invention will be described below with reference to the drawings.
In the following embodiments, the case where the present invention is applied to a method for manufacturing a thin film inductor will be described. FIG. 1 is a plan view of a thin film inductor obtained by the method of manufacturing a thin film inductor according to the present embodiment when viewed from above. Also, in FIG.
3 is a cross-sectional view taken along the line AA ′ of the thin film inductor of FIG.
2 is a cross-sectional view of the thin film inductor of FIG. 1 taken along the line BB ′. FIG. 4 is a plan view showing the first multilayer film of this thin film inductor. FIG. 5 is a plan view showing a coil layer of this thin film inductor. This thin film inductor is a substrate (base)
The first multilayer film 11 is formed on the first multilayer film 1
1, the spiral coil layer 20 is formed via the first insulating layer 15, and the second multilayer film 21 is further formed on the coil layer 20 via the second insulating layer 16. Further, a third insulating layer 17 is formed on the second multilayer film 21 and configured.

The substrate 10 is a substrate made of a ceramic material or a non-conductive substrate such as a resin substrate. When the substrate 10 is made of a ceramic material, various materials such as alumina, zirconia, silicon carbide, silicon nitride, aluminum nitride, steatite, mullite, cordierite, forsterite, and spinel can be appropriately selected and used. .

The first and second multilayer films 11 and 21 are a soft magnetic film having a high magnetic permeability and a high specific resistance, and a high resistance nonmagnetic Al film.
_A plurality of insulating films such as ₂ O ₃ and SiO ₂ are alternately laminated. Since the multilayer film is composed of the soft magnetic film and the insulating film as described above, since the soft magnetic film having a high specific resistance with a small eddy current is used, the intermediate layer of the multilayer film has a high resistance and a non-resistance. This is because it is necessary to use a material having magnetic properties. The first multilayer film 11 is divided into a plurality of parts (four trapezoids in plan view are formed in FIG. 4), and a slit 11a is formed between adjacent multilayer films. The second multilayer film 21 is also divided into a plurality of slits like the first multilayer film 11 to form slits.
The slits are formed in the first and second multilayer films 11 and 21 in order to reduce the eddy current loss in the soft magnetic film.

The first multi-layer film 11 reduces the leakage magnetic flux from the coil layer 20 and prevents the generation of eddy current due to the magnetic flux passing through the coil layer 20.
It is formed to be larger than 0, that is, the inner part 11d of the first multilayer film 11 is formed to a position inside the winding start part 20d inside the coil layer 20, and the outer part (periphery) of the first multilayer film 11 The portion) 11e is formed up to a position outside the winding end portion (outer portion of the coil layer) 20e outside the coil layer 20.

The coil side corner of the inner portion 11d of the first multilayer film 11 has a slight roundness (curved surface) 11i, and the coil side corner of the outer portion 11e also has a slight roundness (curve). (Curved surface) 11i, and therefore the thickness of the first multilayer film 11 is substantially uniform, and the shape and dimensions are approximately the designed values. Overetching and side etching have not occurred, and the width of the overhang portion (a portion larger than the coil layer) O has been improved, and the magnetic flux from the coil layer 20 can be linked. Further, the width of the slit 11a is formed to be substantially uniform.

The second multilayer film 21 is also formed larger than the coil layer 20 for the same reason as the first multilayer film 11. The corner portion on the upper side of the inner portion 21d of the inner portion 21d of the second multilayer film 21 has a slight roundness (curved surface) 21i, and the corner portion on the upper side of the outer portion 21e also has a slight roundness. (Curved surface) 21i, and therefore this second
The thickness of the multi-layer film 21 is substantially uniform, and the shape and dimensions are substantially the same as designed values.
No over-etching or side-etching occurs, and the width of the overhang portion O (the portion larger than the coil layer) is improved, and the magnetic flux from the coil layer 20 can be linked. In addition, the width of the slit between the second multilayer films 21 is formed to be substantially uniform.

The soft magnetic film used for each multilayer film is the following soft magnetic film.
The alloy of the functional alloy (1) or (2) is preferably used. Soft
The magnetic alloy (1) contains Fe as a main component and contains rare earth elements or
Is Ti, Zr, Hf, V, Nb, Ta or W
One or more elements M selected from O and O
It consists of This soft magnetic alloy (1) has a composition formula
Is Fe_aM_bO _cAnd 50 ≦ a ≦ 70, 5 ≦ b ≦ 3
0, 10 ≦ c ≦ 30, a + b + c = 100
It is preferable that the above is satisfied.

Fe is contained as a main component in the soft magnetic alloy (1), and this Fe is an element responsible for magnetism.
In order to obtain a high saturation magnetic flux density, more Fe is more preferable, but if it is 70 atomic% or more, the specific resistance becomes small. The element M is a rare earth element (that is, 3A in the periodic table).
(Sc, Y or lanthanoids belonging to the family), one or more elements, or Ti, Zr, Hf, V,
Periodic table 4A group, 5A including Nb, Ta, W
It is composed of one or two or more elements of Group 6A. The element M has soft magnetic characteristics (high saturation magnetic flux density,
It is necessary to obtain low coercive force and high specific resistance. These combine with oxygen to form an oxide.
The specific resistance can be increased by adjusting the content of this oxide. By increasing the specific resistance, it becomes difficult for eddy currents to occur in the multilayer film, and a decrease in high frequency magnetic permeability is suppressed. Preferably, a Fe microcrystalline phase having a bcc structure and an amorphous phase containing a large amount of M and O are mixed, and the ratio of the microcrystalline phase is 50% or less.

The soft magnetic alloy (2) contains Co as a main component, one or more elements T selected from any of Fe, Ni, Pd, Mn, and Al as a main component, and further contains a rare earth element. Element or Ti, Zr, Hf, Nb,
One or more elements M and at least one selected from Ta, Mo, W, and Y, and at least one of oxides of element M, and a ferromagnetic amorphous phase containing Fe and element T Is the main subject. This soft magnetic alloy (2)
Has a composition formula of (Co _1-c T _c ) xMyQzXwYs,
0.05 ≦ c ≦ 0.5, y, z, w, and a are at% and 3
≦ y ≦ 30, 7 ≦ z ≦ 40, 0 ≦ w ≦ 20, 0 ≦ s ≦ 2
It is preferable that the relationship of 0 is satisfied.

Co, Fe, N in the soft magnetic alloy (2)
One or more elements T selected from i, Pd, Mn, and Al are contained as main components.
And Fe and Ni are elements that play a role in magnetism. Particularly, in order to obtain a high saturation magnetic flux density, it is preferable that the contents of Co and Fe are large, but if the contents of Co and Fe are too small, the saturation magnetic flux density becomes small. The element M is Ti, Zr,
It is composed of Hf, Nb, Mo, W and one or more elements selected from rare earth elements (that is, Sc, Y or lanthanoids belonging to Group 3A of the periodic table). The above M is necessary for obtaining soft magnetic characteristics. These combine with oxygen to form an oxide. The specific resistance can be increased by adjusting the content of this oxide.

Next, the element T (Fe, Ni, Pd, Mn,
One or more elements selected from Al)
It is an element that stabilizes the face-centered cubic structure (fcc structure) of Co or increases uniaxial anisotropy.
In addition, Y (Au, Ag) and platinum group elements (Ru, R
One or more elements of h, Pd, Os, Ir, Pt) improve the corrosion resistance, but if the content exceeds 20 atomic% (at%), the soft magnetic properties deteriorate. The Q is composed of one or more elements selected from O, N, C and B, and the X is composed of one or two elements of Si or Cr. In order to obtain better soft magnetic characteristics and high saturation magnetic flux density, at%
It is preferable that the ranges of 5 ≦ y ≦ 20 and 10 ≦ z ≦ 30 are satisfied. Further, preferably, a microcrystal mainly composed of Co having an fcc structure, a microcrystalline phase composed of a microcrystal mainly composed of Fe having a bcc structure, and an amorphous material containing a large amount of M and O are mixed. The ratio of the microcrystalline phase is 50% or less.

The thickness of each of the first and second multilayer films 11 and 21 is preferably 4.5 μm or more, more preferably 12 because the effect of the manufacturing method of the present embodiment can be remarkably obtained.
It is preferably at least μm, more preferably 15
It is at least μm. By setting the thickness of each of the first and second multilayer films to be 4.5 μm or more, the total thickness of the soft magnetic films in the multilayer film is increased, thereby obtaining a thin film inductor with improved DC superposition characteristics. Moreover, even if the thickness of the multilayer film is as thick as 4.5 μm or more, wet etching is not performed at the time of patterning as will be described later, so that the occurrence of overetching or side etching can be improved. The effect of the present invention that the generation of the eddy current and the leakage magnetic flux due to the above can be prevented, and the reduction of the inductance and the increase of the loss can be prevented is remarkably obtained. The coil layer 20 is made of a highly conductive metal material such as copper, silver, gold, aluminum or an alloy thereof.

This coil layer 2 as shown in FIGS.
In the central portion 20h of 0, the second and third insulating layers 16 and 17 are provided.
In the contact hole and the third insulating layer 16 formed in
Is electrically connected to a first external electrode 25 formed by a sputtering method or the like via an electrode 23 formed on the upper surface of the substrate by a plating method or the like. Further, as shown in FIGS. 1 to 3, the electrode lead-out portion 20i on the outer side of the coil layer 20 is
A second external electrode 26 formed by a sputtering method or the like through a contact hole formed in the third insulating layers 16 and 17 and an electrode 24 formed by a plating method or the like on the upper surface of the third insulating layer 16. Electrically connected to. First,
The second and third insulating layers 15, 16 and 17 are made of materials such as thermosetting resist and photosensitive polyimide.

Next, a first embodiment of the method of manufacturing the thin film inductor shown in FIGS. 1 to 5 will be described. In the manufacturing method described below, a case will be described in which a large number of thin film magnetic elements are formed on a substrate and cut out for each final thin film magnetic element. First, as shown in FIG. 6A, a Ti film (adhesion improving layer) 1 is formed on a substrate (base) 10 by a sputtering method.
0a, a Cu film 10b made of the same material as a lift-off Cu plating layer 13 described later are formed in this order, and a Ti film 10a and a Cu film 1 are formed.
0b and the laminated film 10c are formed. The Ti film 10a is formed here because the Ti film 10a has good adhesion to the substrate 10 and the Cu film, and the laminated film 10c is the substrate 1
This is because it is difficult to peel from 0. In addition, the Cu film 10
b is formed by forming the same material as the material of the lift-off Cu plating layer 13 as a base layer of the lift-off Cu plating layer 13 to form the laminated film 10c.
This is because the lift-off Cu plating layer 13 can be easily formed on the upper surface, and the adhesion between the laminated film 10c and the lift-off Cu plating layer 13 can be improved.

Then, a positive resist pattern 12 is formed on the underlayer 10c shown in FIG. 6B. If the thickness of the resist pattern 12 formed here is too thin, Cu plating will overflow from the pattern when the lift-off Cu plating layer 13 is formed between the resist patterns 12 in a later step. As the positive resist used here, there is used a resist that can be formed thicker than the thickness of the first multilayer film 11 and can be rounded at the corners of the resist pattern 12 when the post-baking described later reduces the viscosity. For example, a novolac resin-based resist or the like is used, and more specifically, SIPR-9351-10.0 (trade name) manufactured by Shin-Etsu Chemical Co., Ltd.,
Examples thereof include THB-611P manufactured by JSR. The resist pattern 12 formed here has a pattern corresponding to the slits 11 a formed between the first multilayer films 11. Then, as shown in FIG. 6C, the resist pattern 12 is post-baked to form roundness (curved surface) 12i at the corner.

The post bake here is 150 ° C. (423
K) or less, and preferably 300 seconds or less, more preferably 120 ° C. (393 K) and about 30 seconds. When the resist pattern 12 is a novolac resin-based resist, when the post-baking temperature exceeds 150 ° C., almost all the resist is cured, and it becomes difficult to peel the resist pattern from the substrate 10 in a later step. I will end up. Also, the time during post-baking depends on the temperature,
Since the solvent in the resist evaporates as the time becomes longer, the viscosity of the resist gradually increases, so that the resist pattern shape hardly changes when the post-baking time is 300 seconds or more, which is economically disadvantageous.

Next, as shown in FIG. 6D, the lift-off Cu plating layer 13 is formed on the gaps 12a between the resist patterns 12 and the corners having the curved surfaces 12i of the resist patterns 12 on both sides of the gaps 12a. At this time, the portion of the lift-off Cu plating layer 13 on the corner having the curved surface 12i of each resist pattern 12 becomes the concave portion 13a having the curved surface. The lift-off Cu plating layer 13 formed here preferably satisfies the condition represented by the following expression (1). th <th1 <th2 (1) (where, th is the thickness of the first multilayer film, th2 is the height of the lift-off plating layer, and th1 is the height of the end of the lift-off plating layer.)

If the lift-off Cu plating layer 13 satisfies the condition represented by the above equation (1), the plating layer 1 thicker than the first multilayer film 11 to be formed in a later step.
3 can be formed. Note that th1 <th <th
Even in the case of 2, it may be possible to form the plating layer 13 thicker than the first multilayer film 11 to be formed in a later step. This is because a magnetic film and an insulating film are laminated on the plating layer 13 when the first multilayer film 11 is formed in a later step, so that the height th1 of the end portion of the lift-off Cu plating layer 13 and This is because the height th2 of the lift-off Cu plating layer 13 seems to be added.

[0047] After this, lift off as shown in A of FIG.
Strip the resist pattern 12 on both sides of the Cu plating layer 13
Peel off and remove with a solvent or solvent such as acetone.
It In this way, the concave portion 1 having curved surfaces on both sides of the lower portion
A lift-off Cu plating layer 13 having 3a is obtained.
It Then, as shown in B of FIG.
The Cu film 10b on the substrate 10 on both sides of the clear layer 13 is wetted.
Of the Ti film 10a, and then the Ti film 10a is removed.
Etching or dry etching
It In this way, the lift-off Cu plating layer 13
Both surfaces of the substrate 10 are exposed. Here, the Cu film 10b
Diluted nitric acid or ferric chloride aqueous solution is used as the etching solution.
Can be Further, as an etching solution for the Ti film 10a
Is a HF solution. In addition, here
Ti film 10a on the substrate 10 on both sides of the Cu plating layer 13
It was removed, but it is not necessary to remove it.
The i film 10a is adhered to when forming the first multilayer film in a later step.
Used as an underlayer.

Then, as shown in FIG. 7C, the above-mentioned portion of the substrate 10 from which the resist pattern 12 and the laminated film 10c are removed, that is, the substrate 10 on both sides of the lift-off Cu plating layer 13 is sputtered. A plurality of soft magnetic films and insulating films are alternately laminated, preferably with a thickness of 4.5 μm
Above, more preferably 12 μm or more of the first multilayer film 11
To form. Here, when forming the soft magnetic film or the insulating film by sputtering, the sputtered particles also enter into the lower side of the concave portion 13a having the curved surface of the lift-off Cu plating layer 13, so that the end surface of the first multilayer film 11 is generally Since the recess 13a is formed in a shape that conforms to the shape of the recess 13a, patterning can be performed accurately, and since wet etching is not performed, occurrence of over-etching or side-etching in the first multilayer film 11 can be improved. The thickness of the multilayer film 11 can be formed to be substantially uniform. There is a slight gap between the first multilayer film 11 formed here and the recess 13a of the lift-off Cu plating layer 13.

Here, when forming the soft magnetic film or the insulating film by sputtering, the maximum value θSmax of the incident angle of sputtered particles is obtained.
Satisfying the condition represented by the following equation (2) means that the recess 13a of the lift-off Cu plating layer 13 is
And the first multilayer film 11 are preferable in that they can be formed so that a gap is slightly opened. θ <θSmax (2) (where θ is the lift-off plating layer formation angle, θSma
x is the maximum value of the incident angle of sputtered particles when performing sputtering. ) In this step, the lift-off Cu plating layer 1 is used.
A multilayer film 11c in which a plurality of the above magnetic films and insulating films are alternately laminated is also formed on 3. The sputtering method used in this step is an ion beam sputtering method,
The long throw sputtering method, the collimation sputtering method, or a sputtering method combining them is preferably used. The insulating film forming the first multilayer film 11 can also be formed by a vapor deposition method.

Then, as shown in FIG. 7D, the Cu plating layer 13 for lift-off and the Cu film 10b on the lower side thereof are removed by wet etching, and then the Ti film 10a is removed by dry etching. Here, the Cu plating layer 13
As an etching solution used for removing the Cu film 10b,
For example, dilute nitric acid or ferric chloride aqueous solution is used. Here, when the lift-off Cu plating layer 13 is removed, if there is a slight gap between the first multilayer film 11 and the lift-off Cu plating layer 13 as described above, the first multilayer film 11 is removed. The lift-off Cu plating layer 13 can be removed without damaging the. When the lift-off Cu plating layer 13 is removed as described above, the slits 11a having a substantially uniform width as shown in FIG. 4 are formed between the first multilayer films 11.

Next, the substrate 10 exposed between the first multilayer film 11 and the first insulating layer 15 covering the first multilayer film 11 are formed by means of spin coating or the like. Then, an underlayer made of a Ti film (not shown) as an adhesion improving layer and the same metal film (not shown) as the coil layer is formed on the first insulating layer 11 by a sputtering method, and then on the underlayer. A coil layer 20 is formed by a pattern plating method in which a resist pattern for forming a coil layer is formed, and then a current is passed through the underlayer to grow plating in a coil shape. Then, the resist pattern for forming the coil layer is peeled off,
Further, the excess underlayer exposed between the coil layers 20 is removed by etching.

Next, the coil layer 20 and the first insulating layer 15
A second insulating layer 16 covering the above is formed in the same manner as the method for forming the first insulating film 15. Then, the second multilayer film 21 is formed on the second insulating film 16. The method of forming the second multilayer film 21 is the same as the method of forming the first multilayer film 11 described above except that the base is the second insulating film 16. Finally,
The second insulating layer 16 exposed between the second multilayer films 21 and the second
The third insulating layer 17 covering the multilayer film 21 of the first insulating film 1
It is formed in the same manner as 5. When forming the second insulating layer 16 and the third insulating layer 17 in the above process, the holes for forming the electrodes 23 and 24 as shown in FIGS. 1 to 3 are formed by patterning. And in these holes and the third
The electrodes 23, 24 are formed on the surface of the insulating layer 17 by plating or the like.
To form.

Then, as described above, the multilayer films 11, 21,
The substrate 10 on which the insulating layers 15, 16, 17 and the coil layer 20 are formed is cut into individual thin film inductors, and then the first and second external electrodes 25 as shown in FIGS. 26 is formed by a sputtering method or the like, the first external electrode 25 and the electrode 23 are connected, and the second external electrode 26 and the electrode 24 are connected. In this way, the thin film inductor shown in FIGS. 1 to 5 is obtained.

According to the method of manufacturing the thin film inductor of the present embodiment, the first and second multilayer films 11 and 21 in which the soft magnetic films formed by the sputtering method are laminated are obtained by patterning by wet etching. But not substrate 1
Since it is obtained by patterning with the lift-off Cu plating layer 13 formed on 0, side-etching or over-etching does not occur during patterning, and the multilayer film can be accurately patterned. The dimensional accuracy of the width of the slit formed between them and the width of the overhang portion O of the above-mentioned multilayer film can be improved, the generation of eddy currents and leakage magnetic flux due to side etching and overetching can be prevented, and the inductance is reduced and the loss is reduced. The increase can be prevented.

Further, since patterning by wet etching is not used for patterning the first and second multilayer films 11 and 12, the resist pattern and the underlying layer of the multilayer film are not damaged by the etching solution, and the above-mentioned multilayer films are formed. It is possible to prevent a decrease in dimensional accuracy and a decrease in quality of the thin film inductor. Therefore, according to the method of manufacturing the thin film inductor of the present embodiment, even if the thickness of the first and second multilayer films 11 and 12 in which the soft magnetic films formed by the sputtering method are stacked is increased, It is possible to manufacture a thin film magnetic element having excellent characteristics, which can be patterned with high precision, can have low loss and can have high inductance.

In the above embodiment, the first multilayer film 11 and the second multilayer film 2 formed above and below the coil layer.
1 has been described by applying the present invention to the case where the above-mentioned high magnetic permeability and high specific resistance soft magnetic film and the above high resistance and non-magnetic insulating film are alternately laminated. When a multilayer film is formed by interposing an insulating film between the laminated films formed by laminating a plurality of soft magnetic films formed by, or when a multilayer film is formed by laminating a plurality of soft magnetic films formed by a sputtering method. Can also be applied.

Further, in the above embodiment, the case where the multilayer film having soft magnetism formed by the sputtering method is provided above and below the coil layer 20 has been described.
It is also applicable to the case where a multilayer film having soft magnetism formed by the sputtering method is provided on one of the upper side and the lower side of 0.
Further, in the above embodiment, the case where the electrodes are taken out from the upper side of the thin film inductor (the electrodes 23 and 24 are formed on the upper surface side of the thin film inductor) as shown in FIGS. 1 to 3 has been described. The electrodes may be taken out from the lower side of the inductor. Further, in the above embodiment, the case where the present invention is applied to the method for manufacturing a thin film inductor has been described, but the present invention can also be applied to a method for manufacturing a transformer in which a plurality of spiral planar coils are provided in parallel.

(Experimental example) A Ti film (adhesion improving layer) having a thickness of 500 Å (0.05 μm) and a C film having a thickness of 1500 Å (0.15 μm) were formed on a substrate made of alumina by a sputtering method.
The u film was formed in this order to form a laminated film as a base layer.
Then, a novolac resin-based positive resist (trade name: SIPR-9351-10.
A resist pattern consisting of 0) is formed. This resist pattern has a pattern corresponding to a slit (target slit width 10 μm) formed between multilayer films described later. Next, apply 120 ° C to the resist pattern,
Post bake for about 30 seconds to round the corners (curved surface)
Was formed. Then, a lift-off Cu plating layer was formed on the gaps between the resist patterns and the corners of the resist patterns on both sides of the gaps having the curved surfaces. After this,
The resist pattern on both sides of the lift-off Cu plating layer was removed using a stripping solution. In this way, a lift-off Cu plating layer having concave portions having curved surfaces on both sides of the lower portion was obtained.

Next, the Cu film on the substrate on both sides of the lift-off Cu plating layer was removed using dilute nitric acid. Then, the Fe-M-O-based soft magnetic film and A are sputtered on the substrate where the resist pattern and the Cu film are removed.
A multilayer film having a thickness of 18 μm by alternately laminating a plurality of l ₂ O ₃ insulating films (12 μm of soft magnetic film of 1 μm, insulating film of 0.5 μm 1
2 layers) were formed. Then, the lift-off Cu plating layer and the Cu film below the Cu plating layer are removed by wet etching using an aqueous solution of ferric chloride or diluted nitric acid, and then the Ti film is removed by dry etching to form a slit in the multilayer film. A formed sample (multilayer film manufactured in the example) was obtained. The multilayer film 11 of the sample manufactured here has four triangular films as shown in FIG. 15 arranged side by side with the slits 11a.

For comparison, a Fe—MO type soft magnetic film and Al ₂ O ₃ insulating film are alternately laminated on a substrate made of alumina by a sputtering method to form a multilayer film (1 μm) having a thickness of 18 μm.
m soft magnetic film 12 layers, 0.5 μm insulating film 12 layers), and then a novolac resin-based positive resist (trade name SIPR-9351-1 manufactured by Shin-Etsu Chemical Co., Ltd.) is formed on the multilayer film.
0.0) a positive resist pattern was formed, and the portion not covered with the resist pattern was etched using a mixed solution of HF and H ₂ O ₂ . This resist pattern has a pattern corresponding to a slit (target slit width 10 μm) formed in a multilayer film described later. Then, the resist pattern was removed to obtain a sample in which slits were formed in the multilayer film (the multilayer film manufactured in the comparative example). The multilayer film of the sample prepared here is four triangular films arranged in plan view with slits in between.

The structures of the multilayer films produced in the produced examples and comparative examples were examined by an optical microscope. FIG. 16 is an optical micrograph showing the structure of the inner part (the central part surrounded by the dotted line F in FIG. 15) of the multilayer film manufactured by the example, and FIG. 17 is the inner part (the center part of the multilayer film manufactured by the comparative example). It is an optical micrograph showing the structure of the tissue of the central portion). The magnification of the photographs in FIGS. 16 and 17 is 200 times. From the results shown in FIGS. 16 and 17, the comparative example in which the slits are formed by patterning the multilayer film by wet etching has a large overetch, and
It can be seen that side etching has occurred. On the other hand, the one manufactured by the example in which the multilayer film is formed by patterning with the lift-off plating layer has improved overetching and side etching, and the patterning accuracy of the multilayer film is improved as compared with the comparative example. You can see that

[0062]

As described above, in the present invention, since the multilayer film in which the soft magnetic films formed by the sputtering method are laminated is formed by patterning with the lift-off plating layer, the thickness of the multilayer film becomes thick. Even when patterning, side etching and overetching can be improved, the multilayer film can be patterned accurately, and the dimensional accuracy of the width of the slit formed between the multilayer films and the width of the overhang portion of the multilayer film is improved. Therefore, it is possible to provide a method of manufacturing a thin film magnetic element, which can prevent generation of eddy currents and leakage magnetic flux due to deterioration of patterning accuracy, and can prevent decrease of inductance and increase of loss.

[Brief description of drawings]

FIG. 1 is a plan view of a thin film inductor obtained in an embodiment of a method of manufacturing a thin film inductor according to the present invention, as viewed from above.

FIG. 2 is a cross-sectional view of the thin film inductor of FIG. 1 taken along the line A-A ′.

3 is a cross-sectional view of the thin film inductor of FIG. 1 taken along the line B-B ′.

FIG. 4 is a plan view showing a first multilayer film of the thin film inductor of FIG.

5 is a plan view showing a coil layer of the thin film inductor of FIG. 1. FIG.

FIG. 6 is a diagram showing a manufacturing process of a first multilayer film in the embodiment of the method of manufacturing a thin film inductor of the present invention.

FIG. 7 is a diagram showing a manufacturing process of a first multilayer film in the embodiment of the method of manufacturing a thin film inductor of the present invention.

FIG. 8 is a sectional view showing an example of a conventional thin film inductor using a soft magnetic film having a high magnetic permeability and a high specific resistance.

9 is a plan view showing a first multilayer film formed on a substrate of the thin film inductor shown in FIG.

FIG. 10 is a plan view showing a coil layer of the thin film inductor shown in FIG.

FIG. 11 is an explanatory view of a process of forming a multilayer film including a soft magnetic film and an insulating film in a conventional method of manufacturing a thin film inductor.

FIG. 12 is a diagram showing a state after etching a multilayer film including a soft magnetic film and an insulating film in a conventional method for manufacturing a thin film inductor.

FIG. 13 First and second shapes and dimensions according to design values
FIG. 6 is a diagram showing a magnetic flux path of the thin film inductor when the multilayer film of FIG.

FIG. 14 is a diagram showing a path of a magnetic flux of the thin film inductor when the first and second multilayer films having overetching and side etching are formed.

FIG. 15 is a schematic diagram showing a planar shape of a multilayer film manufactured in Examples in Experimental Examples.

FIG. 16 is an optical micrograph showing the structure of the structure of the central part of the multilayer film produced according to the example.

FIG. 17 is an optical micrograph showing the structure of the structure of the central portion of the multilayer film produced according to the comparative example.

[Explanation of symbols]

10 ... Substrate (base), 10a ... Ti film (adhesion improving layer), 10b ... Cu film, 10c ... Laminated film (underlayer),
11 ... First multilayer film, 11a ... Slit, 11c ...
Multilayer film, 11d ... inner part, 11e ... outer part (peripheral part), 12 ... resist pattern, 12a ... gap, 1
2i ... Curved surface (roundness), 13 ... Cu plating layer for lift-off (plating layer for lift-off), 13a ... Recess, 15 ...
First insulating layer, 16 ... Second insulating layer (base), 17 ...
Third insulating layer, 20 ... Coil layer, 20d ... Winding start portion, 20e ... Outside portion (winding outer end portion), 20h ... Center portion, 20i ... Electrode extraction portion, 21 ... Second multilayer film, 2
3, 24 ... Electrode, 25 ... First external electrode, 26 ... Second external electrode, O ... Overhang portion.

Claims (8)

[Claims] 1. A method of manufacturing a thin-film magnetic element, comprising a multilayer film formed by laminating a soft magnetic film formed by a sputtering method on at least one of a coil layer and an insulating layer, the method comprising: The manufacturing process includes a step of forming a resist pattern on a substrate, a step of post-baking the resist pattern to form roundness at the corners of the resist pattern, a gap between the resist patterns, and resist on both sides of the gap. A step of forming a lift-off plating layer at the corners having a rounded pattern, a step of removing the resist pattern, and a step of forming a soft magnetic film on the substrate where the resist pattern has been removed by a sputtering method Of a thin film magnetic element, the method including at least a step of forming a multilayer film by means of etching, and a step of removing the lift-off plating layer. Law. 2. Post-baking in the step of forming roundness at the corners of the resist pattern is performed at 150 ° C. or lower for 3 times.
The method for manufacturing a thin film magnetic element according to claim 1, wherein the method is performed for 00 seconds or less. 3. In the step of forming a resist pattern on the substrate, the resist pattern is formed on a laminated film of an adhesion improving layer formed on the substrate and the same material film as the lift-off plating layer, and the resist pattern is formed. Between the step of removing and the step of forming a multilayer film, a step of removing a laminated film of the adhesion improving layer in the portion where the resist pattern is removed and the lift-off plating layer and the same material film,
The step of removing the lift-off plating layer removes a laminated film of a lift-off plating layer, an adhesion improving layer below the lift-off plating layer, and the same material film as the lift-off plating layer. A method for manufacturing the thin-film magnetic element described. 4. A step of removing a laminated film of the adhesion improving layer and a film of the same material as the lift-off plating layer in a portion where the resist pattern is removed, and adhesion of the lift-off plating layer and a lower side thereof. The thin film magnetic element according to claim 3, wherein an aqueous solution containing ferric chloride or nitric acid is used as an etching solution in the step of removing the laminated film of the improvement layer and the film of the same material as the lift-off plating layer. Production method. 5. The multilayer film is formed by alternately laminating a soft magnetic film formed by a sputtering method and an insulating film in the step of forming the multilayer film. 2. A method of manufacturing a thin film magnetic element according to item 1. 6. The soft magnetic film formed in the step of forming the multilayer film contains Fe as a main component and is selected from rare earth elements or Ti, Zr, Hf, V, Nb, Ta and W. 6. The method of manufacturing a thin film magnetic element according to claim 1, wherein the thin film magnetic element is made of a soft magnetic alloy containing one or more elements M and O. 7. The soft magnetic film formed in the step of forming the multilayer film contains Co as a main component and Fe, Ni, P.
One or more elements T selected from any of d, Mn, and Al as a main component, and further selected from rare earth elements or Ti, Zr, Hf, Nb, Ta, Mo, W, and Y 6. The method for manufacturing a thin film magnetic element according to claim 1, wherein the thin film magnetic element is made of a soft magnetic alloy containing one or two or more kinds of elements M and O. 8. The method for manufacturing a thin film magnetic element according to claim 1, wherein the thickness of the multilayer film formed in the forming step is 4.5 μm or more.