JPH0547555A - Amorphous soft magnetic thin film and manufacture thereof - Google Patents

Amorphous soft magnetic thin film and manufacture thereof

Info

Publication number
JPH0547555A
JPH0547555A JP3206807A JP20680791A JPH0547555A JP H0547555 A JPH0547555 A JP H0547555A JP 3206807 A JP3206807 A JP 3206807A JP 20680791 A JP20680791 A JP 20680791A JP H0547555 A JPH0547555 A JP H0547555A
Authority
JP
Japan
Prior art keywords
magnetic
thin film
amorphous
film
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3206807A
Other languages
Japanese (ja)
Other versions
JP2898129B2 (en
Inventor
Hidekuni Sugawara
英州 菅原
Fumio Matsumoto
文夫 松本
Hiroyasu Fujimori
啓安 藤森
Takeshi Masumoto
健 増本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AMORPHOUS DENSHI DEVICE KENKYU
AMORPHOUS DENSHI DEVICE KENKYUSHO KK
Original Assignee
AMORPHOUS DENSHI DEVICE KENKYU
AMORPHOUS DENSHI DEVICE KENKYUSHO KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AMORPHOUS DENSHI DEVICE KENKYU, AMORPHOUS DENSHI DEVICE KENKYUSHO KK filed Critical AMORPHOUS DENSHI DEVICE KENKYU
Priority to JP3206807A priority Critical patent/JP2898129B2/en
Publication of JPH0547555A publication Critical patent/JPH0547555A/en
Application granted granted Critical
Publication of JP2898129B2 publication Critical patent/JP2898129B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00Thin magnetic films, e.g. of one-domain structure
    • H01F10/32Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/3204Exchange coupling of amorphous multilayers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • Manufacturing Cores, Coils, And Magnets (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Soft Magnetic Materials (AREA)
  • Thin Magnetic Films (AREA)

Abstract

PURPOSE:To provide a method of manufacturing an amorphous soft magnetic multilayered thin film very excellent in high frequency characteristics of permeability or inductance and bias-resistant magnetic characteristics. CONSTITUTION:Amorphous magnetic layers and insulating layers are alternately laminated to form a multilayered film, where the magnetic layers are made to shift from each other by a certain angle in an easy magnetization direction.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は高周波帯域で使用される
インダクタ、トランスなどの磁心材料に用いられる非晶
質軟磁性多層薄膜及びその製造方法に関するものであ
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an amorphous soft magnetic multilayer thin film used for magnetic core materials such as inductors and transformers used in a high frequency band, and a method for manufacturing the same.

【0002】[0002]

【従来の技術】近年、電子機器の小型化、高性能化の観
点から高周波帯域使用のインダクタ、トランスの要請が
高まり、これに伴って磁心材料としても高周波域で優れ
た軟磁気特性を持つ材料が望まれている。この様な磁心
用軟磁性材料としてはフェライト、非晶質合金などが用
いられてきた。
2. Description of the Related Art In recent years, there has been an increasing demand for inductors and transformers for use in a high frequency band from the viewpoint of miniaturization and high performance of electronic devices, and accordingly, a material having excellent soft magnetic characteristics in a high frequency region as a magnetic core material. Is desired. Ferrite, amorphous alloys, etc. have been used as such soft magnetic materials for magnetic cores.

【0003】[0003]

【発明が解決しようとする課題】高周波帯域で用いる場
合、必然的に材料の薄膜化が考えられる。フェライトは
比抵抗ρが極めて高いが飽和磁束密度Bsが低く、さら
に薄膜では軟磁性に必要なスピネル構造が成膜されてい
ない。一方、非晶質合金は比抵抗ρがフェライトに比し
劣るものの結晶質合金に比べ一桁大きく、飽和磁束密度
Bsがフェライトよりかなり大きいので、薄膜化には適
している。
When used in a high frequency band, it is inevitable to make the material thinner. Ferrite has a very high specific resistance ρ but a low saturation magnetic flux density Bs, and the thin film does not have a spinel structure necessary for soft magnetism. On the other hand, although the amorphous alloy has a specific resistance ρ that is inferior to that of ferrite, it is an order of magnitude larger than that of a crystalline alloy, and the saturation magnetic flux density Bs is considerably larger than that of ferrite, so that it is suitable for thinning.

【0004】この非晶質合金を用い高周波帯域で使用す
る磁心薄膜を成膜する場合、通常は一軸磁界中成膜を行
い、更にセラミックスのような非磁性絶縁層を磁性層と
交互に積層した一軸磁気異方性をもつ多層膜とする。か
かる多層膜を磁化困難軸方向に磁界を加えて用いるのが
高周波帯域適用の場合の一般の方法である。これによっ
て通常は共鳴周波数まで特性が保たれるが必ずしも満足
するものではなかった。
When a magnetic core thin film for use in a high frequency band is formed using this amorphous alloy, the film is usually formed in a uniaxial magnetic field, and a nonmagnetic insulating layer such as ceramics is alternately laminated with a magnetic layer. A multilayer film having uniaxial magnetic anisotropy is used. It is a general method to apply a magnetic field to such a multilayer film in the direction of the hard axis to apply a high frequency band. This usually maintains the characteristics up to the resonance frequency, but is not always satisfactory.

【0005】本発明は上記の事情に鑑みてなされたもの
で、透磁率或いはインダクタンスの高周波特性並びに耐
バイアス磁界特性の極めて優れた非晶質軟磁性多層薄膜
及びその製造方法を提供することを目的とする。
The present invention has been made in view of the above circumstances, and an object of the present invention is to provide an amorphous soft magnetic multilayer thin film excellent in high frequency characteristics of magnetic permeability or inductance and excellent resistance to bias magnetic field and a method for manufacturing the same. And

【0006】[0006]

【課題を解決するための手段】本発明は上記課題を解決
するために、非晶質磁性層と絶縁層を交互に積層させた
多層膜を作製する際に、各磁性層の容易磁化方向が磁性
層の成膜ごとに膜面内で角度をずらして付与されること
を特徴とするものである。
In order to solve the above-mentioned problems, the present invention provides a method of controlling the easy magnetization direction of each magnetic layer when producing a multilayer film in which amorphous magnetic layers and insulating layers are alternately laminated. It is characterized in that the magnetic layer is applied with a different angle every time the magnetic layer is formed.

【0007】[0007]

【作用】本発明は上記手段により、自然共鳴周波数の極
めて高い、例えば100MHzを越える高周波帯域使用
の磁心として優れた非晶質軟磁性多層薄膜である。
By the above means, the present invention is an amorphous soft magnetic multilayer thin film which is excellent as a magnetic core for use in a high frequency band having a very high natural resonance frequency, for example, exceeding 100 MHz.

【0008】即ち、本発明は非晶質磁性層と絶縁層を交
互に積層させた多層膜を作製する際に、各磁性層の容易
磁化方向を磁性層の成膜ごとに膜面内で角度をずらして
付与し成膜する事によって、透磁率μ或いはインダクタ
ンスLの高周波特性並びに耐バイアス磁界特性の極めて
優れた非晶質軟磁性多層薄膜を得ることができる。
That is, according to the present invention, when a multilayer film in which an amorphous magnetic layer and an insulating layer are alternately laminated is manufactured, the easy magnetization direction of each magnetic layer is set to an angle within the film plane for each film formation of the magnetic layer. By offsetting and applying the film, it is possible to obtain an amorphous soft magnetic multilayer thin film having extremely excellent high frequency characteristics of magnetic permeability μ or inductance L and excellent bias magnetic field resistance characteristics.

【0009】[0009]

【実施例】以下図面を参照して本発明の実施例を詳細に
説明する。
Embodiments of the present invention will now be described in detail with reference to the drawings.

【0010】本発明の多層薄膜はスパッタ法等によって
非晶質合金磁性層と酸化物或いは窒化物等の絶縁層を交
互に積層して作製されるが、非晶質合金の組成等の限定
は特にはなく、高周波領域で優れた軟磁気特性を有し高
飽和磁束密度、ゼロに近い磁歪、更に高電気比抵抗を持
つ材料が適している。絶縁層の厚みに関しては通常用い
られる範囲内であれば特に限定するものではない。磁性
層はその成膜時に一軸磁気異方性を付与するため、必ず
一軸磁界中にて成膜する。本発明の特徴はこの磁性層の
積層条件にある。即ち、それぞれの磁性層の容易磁化方
向が絶縁層を挾んだすぐ上或いは下の磁性層とは膜面内
で任意角度ずれていることが必須条件である。この様な
本発明の方法によって得た多層薄膜磁心はGHzに近い
領域までその透磁率μ或いはインダクタンスLの恒等性
が極めて優れる。以下に本発明の具体的実施例を示す。 具体的実施例−1 高周波スパッタ装置を用い次の条件で多層薄膜を成膜作
製した。 ターゲット :磁性体:Co86Nb9 Zr5 (原子%) 絶縁体:SiO2 スパッタ条件:雰囲気ガス:Ar 基板面磁界:80Oe 膜厚 :CoNbZr:0.25μm/層 SiO2 :0.17μm/層 積層周期 :4(各4層とした) 積層条件 :第1磁性層の容易磁化方向を0°とす
る。 第2磁性層の容易磁化方向:第1層に対し+45° 第3磁性層の容易磁化方向:第1層に対し+90° 第4磁性層の容易磁化方向:第1層に対し−45° 尚、容易磁化方向の付与は磁性層成膜時にその都度基板
面磁界方向を適宜ずらして行った。
The multilayer thin film of the present invention is produced by alternately laminating an amorphous alloy magnetic layer and an insulating layer such as an oxide or a nitride by a sputtering method or the like, but the composition of the amorphous alloy is not limited. In particular, a material having excellent soft magnetic characteristics in a high frequency region, high saturation magnetic flux density, magnetostriction close to zero, and high electric resistivity is suitable. The thickness of the insulating layer is not particularly limited as long as it is within the range usually used. Since the magnetic layer imparts uniaxial magnetic anisotropy during its film formation, it is always formed in a uniaxial magnetic field. The feature of the present invention lies in the lamination conditions of this magnetic layer. That is, it is an essential condition that the easy magnetization direction of each magnetic layer deviates from the magnetic layer immediately above or below the insulating layer by an arbitrary angle in the film plane. The multilayer thin-film magnetic core obtained by the method of the present invention as described above is extremely excellent in the identity of the magnetic permeability μ or the inductance L even in the region close to GHz. Specific examples of the present invention will be shown below. Specific Example-1 A multilayer thin film was formed under the following conditions using a high frequency sputtering device. Target: Magnetic material: Co 86 Nb 9 Zr 5 (atomic%) Insulator: SiO 2 Sputtering condition: Atmosphere gas: Ar Substrate magnetic field: 80 Oe Film thickness: CoNbZr: 0.25 μm / layer SiO 2 : 0.17 μm / layer Stacking period : 4 (4 layers each) Lamination condition: The easy magnetization direction of the first magnetic layer is 0 °. Easy magnetization direction of the second magnetic layer: + 45 ° to the first layer Easy magnetization direction of the third magnetic layer: + 90 ° to the first layer Easy magnetization direction of the fourth magnetic layer: −45 ° to the first layer The easy magnetization direction was given by appropriately shifting the magnetic field direction on the substrate surface each time the magnetic layer was formed.

【0011】比較のために、積層条件以外は本発明と全
く同一条件で一軸磁気異方性多層膜を作製した。透磁率
μ及びインダクタンスL測定は幅10mm×長さ10m
m寸法の試料で行った。励磁磁界は比較試料の容易磁化
方向に直角に印加した。その結果を図1に示す。
For comparison, a uniaxial magnetic anisotropic multilayer film was manufactured under exactly the same conditions as the present invention except for the stacking conditions. Magnetic permeability μ and inductance L are measured by width 10 mm × length 10 m
The measurement was performed on a sample of m size. The exciting magnetic field was applied perpendicular to the easy magnetization direction of the comparative sample. The result is shown in FIG.

【0012】即ち、比較試料は低周波域では透磁率μ、
インダクタンスLともに高い値を示すが、明らかにその
周波数安定性が本発明試料に比べ劣り、ほぼ20MHz
以上で直線性から離脱が始まり急激低下が生じている。
これに対し、本発明試料は透磁率μにしてほぼ2000
程度を保ちその恒等性が500〜600MHzまで維持
されており、周波数に対する安定性が極めて高い試料で
あることが判る。具体的実施例−2
That is, the comparative sample has a magnetic permeability μ in the low frequency region,
The inductance L shows a high value, but its frequency stability is obviously inferior to that of the sample of the present invention, and is about 20 MHz.
As described above, the separation started from the linearity and the sharp decrease occurred.
On the other hand, the sample of the present invention has a magnetic permeability μ of about 2000.
The homogeneity is maintained up to 500 to 600 MHz, which indicates that the sample has extremely high frequency stability. Specific Example-2

【0013】具体的実施例−1と同一条件で作製した本
発明試料の薄膜並びに比較試料の一軸異方性試料薄膜に
ついて、図3に示すような被測定薄膜Sに、高周波磁界
(f=10MHz)に直角方向に直流磁界(Hdc)を
10Oeまで加え、バイアス磁界に対する影響を見た。
Regarding the thin film of the sample of the present invention and the uniaxially anisotropic sample thin film of the comparative sample, which were produced under the same conditions as in the specific example-1, a thin film to be measured S as shown in FIG. ), A DC magnetic field (Hdc) was applied up to 10 Oe in the direction perpendicular to the above, and the effect on the bias magnetic field was observed.

【0014】その結果を図2に示す。図2(a)は比較
試料の場合で、A1は磁化容易軸(Easy axi
s)方向に磁界を加えた場合、A2は磁化困難軸(Ha
rdaxis)方向に磁界を加えた場合、A3は空白
(blank)の場合である。図2(b)は本発明試料
の場合で、B1は容易磁化方向(Easy direc
tion)に磁界を加えた場合、B2は困難磁化方向
(Hard direction)に磁界を加えた場
合、B3は空白(blank)の場合である。即ち、図
2のとおり、本発明試料は数Oeの外部磁界(バイアス
磁界Hdc)に対し安定していることが明白である。
The results are shown in FIG. 2A shows the case of the comparative sample, where A1 is the easy axis (Easy axi).
When a magnetic field is applied in the s) direction, A2 is the hard axis (Ha
When a magnetic field is applied in the rdaxis direction, A3 is a blank case. FIG. 2B shows the case of the sample of the present invention, where B1 is the easy magnetization direction (Easy direc).
when a magnetic field is applied to the hard magnetic direction (Hard direction), and when a magnetic field is applied to the hard direction (B2), B3 is a blank case. That is, as shown in FIG. 2, it is apparent that the sample of the present invention is stable against an external magnetic field (bias magnetic field Hdc) of several Oe.

【0015】[0015]

【発明の効果】以上述べたように本発明によれば、非晶
質磁性層と絶縁層を交互に積層させた多層膜を作製する
際に、各磁性層の容易磁化方向を磁性層の成膜ごとに膜
面内で角度をずらして付与することにより透磁率或いは
インダクタンスの高周波特性並びに耐バイアス磁界特性
の極めて優れた非晶質軟磁性多層薄膜が得られることが
判り、この工業的意義、産業界に及ぼす効果は大きい。
As described above, according to the present invention, when a multilayer film in which an amorphous magnetic layer and an insulating layer are alternately laminated is prepared, the easy magnetization direction of each magnetic layer is set to the magnetic layer formation. It was found that an amorphous soft magnetic multi-layered thin film with extremely excellent high-frequency characteristics of magnetic permeability or inductance and anti-bias magnetic field characteristics can be obtained by shifting the angle within the film plane for each film. The effect on the industrial world is great.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明試料に関わる非晶質軟磁性多層薄膜と、
比較試料として通常の一軸磁気異方性非晶質多層磁性薄
膜の透磁率並びにインダクタンスの周波数依存の一例を
示す特性図である。
FIG. 1 is an amorphous soft magnetic multilayer thin film according to a sample of the present invention,
FIG. 3 is a characteristic diagram showing an example of frequency dependence of magnetic permeability and inductance of a normal uniaxial magnetic anisotropic amorphous multilayer magnetic thin film as a comparative sample.

【図2】本発明試料に関わる非晶質軟磁性多層薄膜と比
較して通常の一軸磁気異方性非晶質多層磁性薄膜のバイ
アス磁界特性の一例を示す特性図である。
FIG. 2 is a characteristic diagram showing an example of a bias magnetic field characteristic of a normal uniaxial magnetic anisotropic amorphous multilayer magnetic thin film as compared with the amorphous soft magnetic multilayer thin film related to the sample of the present invention.

【図3】本発明に係る被測定薄膜と磁界との関係の一例
を示す説明図である。
FIG. 3 is an explanatory diagram showing an example of the relationship between the thin film to be measured and the magnetic field according to the present invention.

【符号の説明】[Explanation of symbols]

S…被測定薄膜。 S ... Thin film to be measured.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 H01F 17/04 K 7129−5E 27/24 41/02 B 8019−5E 41/18 7371−5E (72)発明者 松本 文夫 宮城県仙台市青葉区芋沢字権現森山112番 地の1 株式会社アモルフアス・電子デバ イス研究所内 (72)発明者 藤森 啓安 宮城県仙台市青葉区吉成2−20−3 (72)発明者 増本 健 宮城県仙台市青葉区上杉3−8−22─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Internal reference number FI Technical display location H01F 17/04 K 7129-5E 27/24 41/02 B 8019-5E 41/18 7371-5E ( 72) Inventor Fumio Matsumoto 1 112 112 Gongen Moriyama, Aoba-ku, Aoba-ku, Sendai-shi, Miyagi Amorphous Electronic Devices Laboratory Co., Ltd. 72) Inventor Ken Masumoto 3-8-22 Uesugi, Aoba-ku, Sendai City, Miyagi Prefecture

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 非晶質磁性層と絶縁層を交互に積層させ
た非晶質軟磁性多層薄膜において、各磁性層の容易磁化
方向が磁性層の成膜ごとに膜面内で任意角度ずれている
ことを特徴とする非晶質軟磁性多層薄膜。
1. In an amorphous soft magnetic multilayer thin film in which an amorphous magnetic layer and an insulating layer are alternately laminated, the easy magnetization direction of each magnetic layer is deviated by an arbitrary angle in the film plane every time the magnetic layer is formed. An amorphous soft magnetic multi-layered thin film.
【請求項2】 非晶質磁性層と絶縁層を交互に積層させ
た多層膜を作製する非晶質軟磁性多層薄膜の製造方法に
おいて、各磁性層の容易磁化方向が磁性層の成膜ごとに
膜面内で角度をずらして付与することを特徴とする非晶
質軟磁性多層薄膜の製造方法。
2. A method of manufacturing an amorphous soft magnetic multilayer thin film, which comprises manufacturing a multilayer film in which an amorphous magnetic layer and an insulating layer are alternately laminated, wherein an easy magnetization direction of each magnetic layer is set every time the magnetic layer is formed. A method for producing an amorphous soft magnetic multilayer thin film, characterized in that the film is applied with a different angle in the film plane.
JP3206807A 1991-08-19 1991-08-19 Amorphous soft magnetic multilayer thin film and manufacturing method thereof Expired - Lifetime JP2898129B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3206807A JP2898129B2 (en) 1991-08-19 1991-08-19 Amorphous soft magnetic multilayer thin film and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3206807A JP2898129B2 (en) 1991-08-19 1991-08-19 Amorphous soft magnetic multilayer thin film and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JPH0547555A true JPH0547555A (en) 1993-02-26
JP2898129B2 JP2898129B2 (en) 1999-05-31

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Country Status (1)

Country Link
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002158112A (en) * 2000-09-12 2002-05-31 Memscap Fine element of type such as minute inductor and minute transformer
WO2005031762A2 (en) * 2003-09-30 2005-04-07 Tdk Corporation Magnetic thin film for high frequency and its production method, and magnetic element
KR101232222B1 (en) * 2011-10-26 2013-02-12 한국기계연구원 A composite film for absorption emi and the method for preparation of the same

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62128109A (en) * 1985-11-29 1987-06-10 Akai Electric Co Ltd Manufacture of high-permeability laminating film

Patent Citations (1)

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JPS62128109A (en) * 1985-11-29 1987-06-10 Akai Electric Co Ltd Manufacture of high-permeability laminating film

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JP2002158112A (en) * 2000-09-12 2002-05-31 Memscap Fine element of type such as minute inductor and minute transformer
WO2005031762A2 (en) * 2003-09-30 2005-04-07 Tdk Corporation Magnetic thin film for high frequency and its production method, and magnetic element
WO2005031762A3 (en) * 2003-09-30 2005-06-30 Tdk Corp Magnetic thin film for high frequency and its production method, and magnetic element
KR101232222B1 (en) * 2011-10-26 2013-02-12 한국기계연구원 A composite film for absorption emi and the method for preparation of the same

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