JP2000054083A - Soft magnetic multilayered film, and flat magnetic element, filter, and thin film magnetic head using the soft magnetic multilayered film, and manufacture of the soft magnetic multilayer film - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a soft magnetic multilayered film and its manufacturing method, capable of forming insulating modified layers on respective surfaces of soft magnetic films only by a target necessary for the formation of the soft magnetic films and capable of forming the soft magnetic films into a multilayered film, and also to provide a flat magnetic element a filter and a thin film magnetic head using the soft magnetic multilayered film. SOLUTION: Although a soft magnetic multilayered film 5 is constituted of a multilayered film structure of plural soft magnetic films 7, modified layers 8 of oxide film or nitride film, having capacitance with respect to high frequency, are formed on respective surfaces of the soft magnetic films 7. The modified layers 8 can be formed by oxidizing or nitriding respective surfaces of the soft magnetic films 7, and accordingly, the soft magnetic multilayered film 5 can be formed only by a target necessary to form the soft magnetic films 7.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a soft magnetic film used for, for example, a magnetic core of a planar magnetic element (transformer, inductor), and more particularly to a soft magnetic film formed of only a target for forming a soft magnetic film. A soft magnetic multilayer film capable of forming a multilayer structure of a film and an insulating film (altered layer), and a planar magnetic element, a filter, and a thin film magnetic head using the soft magnetic multilayer film;
And a method for manufacturing the soft magnetic multilayer film.

[0002]

2. Description of the Related Art Soft magnetic films used as magnetic layers for planar magnetic elements (transformers, inductors), filters, thin-film magnetic heads, and the like need to have excellent high-frequency characteristics. Soft magnetic film,
Fe- described in JP-A-6-316748.
An Hf-O film can be used.

FIG. 9 is a sectional view of a conventional inductor. In FIG. 9, a planar coil 3 is formed on a magnetic layer 1, and the planar coil 3 is covered with an insulating layer 2. Further, a magnetic layer 4 is formed on the insulating layer 2, and an end of the magnetic layer 4 is magnetically connected to the magnetic layer 1. The magnetic layers 1 and 4 are formed of the Fe—Hf—O film or the like having excellent high frequency characteristics. Although the magnetic layers 1 and 4 are formed by a sputtering method or the like, the magnetic layer 4 formed on the insulating layer 2 covering the planar coil 3 is formed on the insulating layer 2 so as to prevent magnetic saturation. It is necessary to increase the film thickness.

However, when the thickness of the magnetic layer 4 is increased, there is a problem that core loss (iron loss) in a high frequency band increases. The core loss is inversely proportional to the specific resistance, and the Fe—Hf—O film described above has a high specific resistance.
If it is used as 4, the core loss can be reduced. But,
At the same time, the core loss is proportional to the square of the film thickness. Therefore, as the film thickness increases, the core loss sharply increases in a high frequency band. Therefore, in order to reduce the occurrence of the core loss and prevent magnetic saturation, it is necessary to use a multilayer film in which a soft magnetic film formed with a small thickness and an insulating film are alternately stacked. . For the insulating film, general Al ₂ O ₃ or SiO ₂ is used as an insulating material.

[0005]

However, in order to alternately stack a soft magnetic film and an insulating film in a film forming apparatus, the soft magnetic film (for example, an Fe-Hf-O film) and the insulating film may be stacked. Since the composition is different from that of (for example, Al ₂ O ₃ ), two kinds of targets are prepared: a target required for forming a soft magnetic film, and a target required for forming an insulating film. The soft magnetic film and the insulating film must be alternately stacked while replacing each target, which complicates the manufacturing process. Further, after patterning, when patterning a magnetic layer composed of a soft magnetic film and an insulating film, the etching rate is different between the soft magnetic film and the insulating film. There were problems such as bad.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned conventional problems. In particular, only a target necessary for forming a soft magnetic film is used, and an insulating altered layer is formed on the surface of the soft magnetic film. Provided are a soft magnetic multilayer film which can be formed to realize a multilayered soft magnetic film and a method for manufacturing the same, and a planar magnetic element, a filter, and a thin film magnetic head using the soft magnetic multilayer film are provided. It is intended to be.

[0007]

In the soft magnetic multilayer film according to the present invention, an altered layer of an oxide film or a nitride film having electric capacity is formed on the surface of the soft magnetic film, and the altered layer is formed. It is characterized in that a number of soft magnetic films are stacked.

In the present invention, the composition of the soft magnetic film contains O and has a film structure in which a microcrystalline phase and an amorphous phase are mixed, and an oxide film is formed on the surface of the soft magnetic film. An altered layer is formed, or the composition of the soft magnetic film contains N, and has a film structure in which a microcrystalline phase and an amorphous phase are mixed. In addition, an altered layer of a nitride film may be formed.

The soft magnetic film constituting each layer of the soft magnetic multilayer film according to the present invention comprises, for example, a microcrystalline phase mainly composed of Fe and / or Co, Ti, Zr, Hf, V, Nb, and Tb.
a, Mo, W, Al, Si, Cr, P, C, B, Ga,
It has a film structure in which one or more elements M selected from Ge and rare earth elements and an amorphous phase containing a large amount of elements O and / or N are mixed.

The crystal structure of the microcrystalline phase is bcc
It is preferable that the crystal structure is composed of one or more of a hybrid structure, a hcp structure, and an fcc structure. More preferably, the crystal structure of the microcrystalline phase is mainly composed of a bcc structure. In the present invention, the average crystal grain size of the microcrystalline phase is preferably 30 nm or less.

In the present invention, the soft magnetic film is formed, for example, with the following composition. _{(Fe 1-a Co a)} x M y L z O w , however, M is, Zr, Hf, V, Nb , Ta, Mo,
One or more elements selected from W, Al, Si, Cr, P, C, B, Ga, Ge and rare earth elements;
L is Pt, Ru, Rh, Pd, Ir, Os, Sn, T
one or more elements selected from i, Au, Ag, and Cu, and a indicating a composition ratio is 0 ≦ a ≦ 0.5,
x, y, z, w are at%, 5 ≦ y ≦ 30, 0 ≦ z ≦ 2
0, 5 ≦ w ≦ 40, 10 ≦ y + z ≦ 40, and the remainder is x. More preferably, a indicating the composition ratio of the soft magnetic film is 0 ≦ a ≦ 0.3, x, y, z, and w are at%,
7 ≦ y ≦ 15, 0 ≦ z ≦ 5, 20 ≦ w ≦ 35, and the remainder is x.

The element M is preferably an element containing one or both of Zr and Hf. Further, in the present invention, the composition a of the soft magnetic film is 0 and the composition Z is 0 at%, that is, the soft magnetic film is made of Fe
It is preferably formed of a -MO film.

Alternatively, the soft magnetic film according to the present invention is formed with the following composition. _{(Co 1-a T a)} x M y L z O w , however, T is an element including Fe, one or both either of Ni, M is, Ti, Zr, Hf, Nb ,
Ta, Cr, Mo, Si, P, C, W, B, Al, G
a, Ge and one or more elements selected from rare earth elements, and L is Au, Ag, Cu, Ru, Rh,
One or more elements selected from Os, Ir, Pt, and Pd, and a indicating a composition ratio is 0 ≦ a ≦ 0.
7, x, y, z, w are at%, 3 ≦ y ≦ 30, 0 ≦ z
≦ 20, 7 ≦ w ≦ 40, and 20 ≦ y + z + w ≦ 60, and the remainder is x.

In the present invention, a representing the composition ratio of the soft magnetic film is 0 ≦ a ≦ 0.3, and x, y, z, and w are at%.
Where 7 ≦ y ≦ 15, 0 ≦ z ≦ 19, 20 ≦ w ≦ 35,
More preferably, the relationship of 0 ≦ y + z + w ≦ 50 is satisfied, and the balance is more preferably x.

In the present invention, the element T is preferably Fe. In this case, the concentration ratio between Co and Fe is
It is preferable that 0.3 ≦ {Co / (Co + Fe)} ≦ 0.8. Further, in the present invention, N may be used instead of O, or N together with O, as one element constituting the soft magnetic film described above. The specific resistance of the soft magnetic film according to the present invention described above is 300 to 3000 μΩ.
・ Cm.

Further, the present invention is characterized in that the magnetic core of a planar magnetic element and a filter is formed by the above-mentioned soft magnetic multilayer film.

The present invention further provides at least a lower core layer, an upper core layer facing the lower core layer via a magnetic gap at a portion facing the recording medium, and a coil layer for applying a recording magnetic field to both core layers. A thin-film magnetic head having
At least one of the lower core layer and the upper core layer,
It is characterized by being formed by the soft magnetic multilayer film described above.

In the method of manufacturing a soft magnetic multilayer film according to the present invention, a soft magnetic film having a composition of O and / or N is formed in a film forming apparatus, and then oxygen or nitrogen is introduced into the apparatus. A step of oxidizing or nitriding the surface of the soft magnetic film to form an altered layer of an oxide film or a nitride film having electric capacity on the surface, and repeating the above steps,
And laminating a soft magnetic film having an altered layer on the surface to form a multilayer film. Further, in the present invention, after the soft magnetic film is formed, the soft magnetic film is exposed to the air to oxidize the surface of the soft magnetic film to form an altered layer of an oxide film having electric capacity on the surface. You may.

In the present invention, the composition of the soft magnetic film may be O
It is preferable that the surface of the soft magnetic film is oxidized to form an altered layer of the oxide film on the surface. Further, in the present invention, when the composition of the soft magnetic film includes N, it is preferable that the surface of the soft magnetic film is nitrided to form an altered layer of a nitride film on the surface.

In the present invention, the soft magnetic film is formed with the following composition. _{(Fe 1-a Co a)} x M y L z K w however, M is, Zr, Hf, V, Nb , Ta, Mo,
One or more elements selected from W, Al, Si, Cr, P, C, B, Ga, Ge and rare earth elements;
L is Pt, Ru, Rh, Pd, Ir, Os, Sn, T
K is one or more elements selected from i, Au, Ag, and Cu, and K is an element containing one or both of O and N, and a indicating a composition ratio is represented by 0 ≦ a ≦ 0. .
5, x, y, z, w are at%, 5 ≦ y ≦ 30, 0 ≦ z
≦ 20, 5 ≦ w ≦ 40, 10 ≦ y + z ≦ 40, and the remainder is x. In the present invention, a indicating the composition ratio of the soft magnetic film is 0 ≦ a ≦ 0.3, and x, y, z, and w are at%.
And 7 ≦ y ≦ 15, 0 ≦ z ≦ 5, 20 ≦ w ≦ 35,
More preferably, the balance is x.

Further, in the present invention, the element M is represented by Zr,
It is preferable to form one or both of Hf. In the present invention, the composition a of the soft magnetic film is set to 0.
Preferably, the composition Z is formed at 0 at%, that is, the composition of the soft magnetic film is formed of Fe-MO.

Alternatively, in the present invention, the soft magnetic film is formed with the following composition. _{(Co 1-a T a)} x M y L z K w However, T is an element including Fe, one or both either of Ni, M is, Ti, Zr, Hf, Nb ,
Ta, Cr, Mo, Si, P, C, W, B, Al, G
a, Ge and one or more elements selected from rare earth elements, and L is Au, Ag, Cu, Ru, Rh,
K is one or more elements selected from Os, Ir, Pt, and Pd, and K is an element containing one or both of O and N, and a indicating a composition ratio is defined as 0 ≦ a ≦
0.7, x, y, z, w are at%, and 3 ≦ y ≦ 30, 0
≦ z ≦ 20, 7 ≦ w ≦ 40, 20 ≦ y + z + w ≦ 60, and the remainder is x.

In the present invention, a indicating the composition ratio of the soft magnetic film is 0 ≦ a ≦ 0.3, and x, y, z and w are at%.
Where 7 ≦ y ≦ 15, 0 ≦ z ≦ 19, 20 ≦ w ≦ 35,
It is more preferable that 0 ≦ y + z + w ≦ 50, and the balance be x. In the present invention, the element T is preferably formed of Fe. In this case, the concentration ratio of Co to Fe is
Preferably, it is formed so that 0.3 ≦ {Co / (Co + Fe)} ≦ 0.8.

Conventionally, planar magnetic elements (inductors,
Transformer), a filter, and a magnetic layer used for a thin-film magnetic head, etc., by forming a multilayer film structure in which soft magnetic films having a small thickness and insulating films are alternately laminated.
It is known that it is possible to prevent magnetic saturation and reduce core loss (iron loss) in a high frequency band.

Conventionally, Al ₂ O ₃ or SiO ₂ has been used as an insulating film.
Had by using a _2, the composition of the soft magnetic film, wherein for the composition of the insulating film are different, during the deposition, and the target for forming the soft magnetic film, the target for forming the insulating film However, there are problems such as the necessity of the two types and the poor workability due to the difference in etching rate between the soft magnetic film and the insulating film.

Therefore, according to the present invention, a soft magnetic multilayer film in which soft magnetic films and insulating films are alternately laminated can be formed only with a target necessary for forming a soft magnetic film. Can be formed with the same composition. FIG. 1 is a sectional view showing the structure of a multilayered soft magnetic multilayer film 5 according to the present invention. As shown in FIG. 1, a plurality of soft magnetic films 7 are stacked on a substrate 10. In the present invention, the composition of the soft magnetic film 7 contains O (oxygen) and / or N (nitrogen).
A microcrystalline phase of an element bearing magnetism such as e or Co and an amorphous phase surrounding the microcrystalline phase are mixed.

As shown in FIG. 1, an altered layer 8 is formed on the surface of each soft magnetic film 7. The altered layer 8 is an oxide film or a nitride film having an electric capacity with respect to a high frequency. In the high frequency region, the altered layer 8 is a non-altered layer 9 having soft magnetic characteristics (from the soft magnetic film 7 to the altered layer). 8) is magnetically shielded so that the same function as a conventional insulating film can be exhibited.

The constituent elements of the altered layer 8 are the same as those of the non-altered layer 9, and the composition of the soft magnetic multilayer film 5 shown in FIG. 1 is almost a single layer. As described above, in the present invention, the composition of the soft magnetic film 7 laminated on the substrate 10 contains O (oxygen) and / or N (nitrogen). The amount of O (oxygen) or N (nitrogen) is different between the surface of the soft magnetic film 7 and a portion other than the surface of the soft magnetic film 7, and the surface of the soft magnetic film 7 has
A large amount of (oxygen) and / or N (nitrogen) is contained, and the altered layer 8 of a strong oxide film or nitride film is formed.

FIG. 2 shows a Fe-Hf- layer having a thickness of 3.0 μm.
The figure shows the result of performing Auger analysis after forming an O film and forming an altered layer 8 of an oxide film on the surface. The Fe—Hf—O film used in this analysis is Fe ₅₅ Hf ₁₁ O ₃₄ . The horizontal axis in FIG. 2 is the sputtering depth (μm) from the surface, and the vertical axis is the content (at%) of each atom constituting the Fe—Hf—O film.

According to the analysis result shown in FIG.
At a depth of about 01 μm, the content of oxygen atoms is much higher than that of Fe atoms or Hf atoms. Also,
About 0.01 μm from the surface, Fe atoms and Hf atoms are also contained although their contents are small. Thus, the surface has a large content of oxygen atoms, but the composition is still Fe-Hf-O. That is,
The vicinity of the surface is a natural oxide film containing a large amount of oxygen in the Fe-Hf-O, and this portion is the altered layer 8.
Further, at a position deeper than about 0.01 μm from the surface, F
The content of the e atom is large, and shows soft magnetic characteristics.

As described above, although the composition is the same between the surface of the Fe—Hf—O film and the other portions, the content of oxygen atoms is greatly different. The deteriorated layer 8 having typical insulating properties is laminated on the non-changed layer 9 having soft magnetic properties other than the surface.

The present inventors have demonstrated that the altered layer 8 functions as a magnetic insulating layer against a high-frequency magnetic field as follows. First, as shown in FIG.
An Hf-O film was formed on a substrate, and the surface of the Fe-Hf-O film was exposed to the air and spontaneously oxidized to form an altered layer. The Auger analysis shown in FIG. 2 is an analysis of the soft magnetic film shown in FIG. 3, that is, the thickness of the altered layer on the surface of the Fe—Hf—O film used in the experiment shown in FIG. 0
It is about 1 μm.

In FIG. 3, two electrode portions were brought into close contact with the surface of the altered layer of the Fe-Hf-O film, and an alternating voltage was supplied between the electrode portions to measure the impedance. FIG. 4 shows the experimental results. As shown in FIG. 4, when the frequency of the alternating current is in a high frequency band of about 100 MHz, the impedance is significantly reduced. This means that the altered layer functions electrically as a capacitance component in a high frequency band.

It is a necessary condition for the layer between the magnetic films to function as an electric capacitance component with respect to a high-frequency current, in order to function as a magnetic insulating layer with respect to a high-frequency AC magnetic field. In the present invention, when an altered layer such as an oxide layer or a nitride layer is formed on the surface of a soft magnetic film such as an Fe—Hf—O film, the altered layer may function as an electrical capacitance component at least in a high frequency band. For example, attention is paid to a phenomenon that a multilayer film having soft magnetism can function as a magnetic shield against a high-frequency high-frequency magnetic field.

In the present invention, an altered layer 8 of an oxide film or a nitride film functioning as an electric capacitance component for a high-frequency current is formed on the surface of the soft magnetic film 7 shown in FIG. 8 can function as a magnetic insulating layer against a high-frequency magnetic field. Therefore, in the soft magnetic multilayer film shown in FIG. 1, the magnetic thickness of each of the non-altered layers 9, 9,... Can be reduced, which is effective in reducing core loss. In addition, since the multilayer film is used, the overall saturation magnetic flux can be increased, and a soft magnetic material that hardly causes magnetic saturation can be obtained.

The method for forming an oxide film on the surface of the Fe—Hf—O film is as follows. After the Fe—Hf—O film is formed, the film is exposed to the air or oxygen is added to the film forming apparatus. It can be easily formed by encapsulation. Since the Fe—Hf—O film contains Hf atoms that are easily bonded to oxygen atoms, oxygen atoms contained in the atmosphere are attracted to the Hf atoms, and the Fe—Hf—O It is considered that an oxygen-rich oxide film is formed on the film surface.

According to the present invention, Ti, Zr, which contains O (oxygen) and / or N (nitrogen) in the composition, such as an Fe—Hf—O film, and is easily bonded to the oxygen atom or the nitrogen atom. , Hf, V, Nb, Ta, Mo, W, A
The surface of a soft magnetic film containing one or more elements M selected from the group consisting of l, Si, Cr, P, C, B, Ga, Ge and a rare earth element is positively formed on an oxide film or a nitride film. After forming the altered layer, a soft magnetic film having the same composition as that of the soft magnetic film is formed again on the altered layer, and further, an altered layer of an oxide film or a nitride film is formed on the surface of the soft magnetic film. Form. As shown in FIG. 1, the soft magnetic multilayer film thus laminated is composed of an unaltered layer 9 having soft magnetic properties and an altered layer 8 of an oxide film or a nitride film having an electric capacity with respect to alternating current. The non-altered layers 9 facing each other via the altered layer 8 are magnetically isolated from each other. If the soft magnetic film 7 is formed to be thin, the The thickness of the non-altered layer 9 having magnetic properties is reduced,
The core loss can be reduced. When the soft magnetic multilayer film 5 has a multilayer structure, the entire thickness of the soft magnetic multilayer film 5 can be increased, and magnetic saturation can be prevented.

In particular, in the present invention, since the soft magnetic multilayer film 5 having a multilayer structure can be formed only with the target necessary for forming the soft magnetic film 7, the manufacturing process can be simplified, and
Since the composition of the non-altered layer 9 and the altered layer 8 of the formed soft magnetic film 7 are the same, the etching rate is almost the same and the workability is good.

Next, the features of the soft magnetic film of the present invention will be described. The soft magnetic film according to the present invention comprises Fe and / or
Or a microcrystalline phase mainly composed of Co, Ti, Zr, H
f, V, Nb, Ta, Mo, W, Al, Si, Cr,
It has a film structure in which one or more elements M selected from P, C, B, Ga, Ge and rare earth elements and an amorphous phase containing a large amount of elements O and / or N are mixed.

The specific composition formula of soft magnetic film in the present invention is represented by _{(Fe 1-a Co a)} x M y L z O w. However,
L is Pt, Ru, Rh, Pd, Ir, Os, Sn, T
It is one or more elements selected from i, Au, Ag, and Cu, and the composition ratios x, y, z, and w are at%.
Note that N (nitrogen) may be contained in the composition instead of or together with O.

In the soft magnetic film, Fe is a main component and is an element exhibiting ferromagnetism. Therefore, Fe is an element that plays a role in magnetism. In particular, in order to obtain a high saturation magnetic flux density, the content of Fe is preferably as large as possible. Co is an element that bears magnetism similarly to Fe, and can be added by substituting a part of Fe. In order to obtain good soft magnetic properties, the addition ratio with Fe is preferably 0.5 or less,
More preferably, it is 0.3 or less.

The element M is an element necessary for achieving both soft magnetic characteristics and high resistance. These elements are easily bonded to oxygen, form oxides, are mainly distributed in the amorphous phase, This is to improve the specific resistance of the film. In order to obtain this effect, it is preferable that the content is at least 5 at% or more. However, if the addition amount is too large, the soft magnetic properties of the magnetic film are deteriorated, and the saturation magnetic flux due to the decrease in the Fe concentration is reduced. For lowering the density, the content is preferably 30 at% or less. More preferably, it is 7 at% or more and 15 at% or less.

The element L adjusts the corrosion resistance, frequency characteristics and magnetostriction of the magnetic film. These elements L are 10a
If added in excess of t%, the soft magnetic properties are degraded and the saturation magnetic flux density is undesirably reduced. More preferably, 5a
It is good to be t% or less. When combined with the element M, the total amount of the element M and the element L is preferably 5 at% or more and 40 at% or less.

The element O exists in the amorphous state and combines with the element M to form an oxide of M. It is preferable that the element O is contained in an amount of 10 at% to 40 at%. In order to obtain good soft magnetic characteristics, high saturation magnetic flux density, and good frequency characteristics, the addition amount of element O is 20 at% or more and 35 at.
% Is preferable.

In the present invention, in order to maintain a high saturation magnetic flux density while securing good soft magnetic characteristics, the composition ratio a
Is 0 ≦ a ≦ 0.5, x, y, z and w are at% and 5 ≦
y ≦ 30, 0 ≦ z ≦ 20, 5 ≦ w ≦ 40, 10 ≦ y + z
≦ 40, and the balance is preferably X. Furthermore, in order to reliably obtain good soft magnetic characteristics and high saturation magnetic flux density, a is 0 ≦ a ≦ 0.3, and x, y, z, and w are a
At t%, 7 ≦ y ≦ 15, 0 ≦ z ≦ 5, 20 ≦ w ≦ 35, and the balance is more preferably x.

The element M is preferably an element containing one or both of Zr and Hf. Further, in the present invention, the composition a of the soft magnetic film is set to 0, and the composition z is set to 0.
It is preferable to set at%. That is, the composition of the soft magnetic film is preferably formed of Fe-MO. This Fe-MO film has a very high saturation magnetic flux density.

Alternatively, in the present invention, the soft magnetic film may be formed with the following composition. _{(Co 1-a T a)} x M y L z O w , however, T is an element including Fe, one or both either of Ni, M is, Ti, Zr, Hf, Nb ,
Ta, Cr, Mo, Si, P, C, W, B, Al, G
a, Ge and one or more elements selected from rare earth elements, and L is Au, Ag, Cu, Ru, Rh,
One or two or more elements selected from Os, Ir, Pt, and Pd, and a indicating a composition ratio is defined as 0 ≦ a ≦ 0.
7, x, y, z, w are at%, 3 ≦ y ≦ 30, 0 ≦ z
≦ 20, 7 ≦ w ≦ 40, 20 ≦ y + z + w ≦ 60,
The balance is x.

In the present invention, in order to maintain a high saturation magnetic flux density while securing good soft magnetic characteristics, a indicating the composition ratio of the soft magnetic film is set to 0 ≦ a ≦ 0.3, x, y, z and w are at%, 7 ≦ y ≦ 15, 0 ≦ z ≦ 19, 20 ≦ w ≦ 3
It is more preferable that 5, 30 ≦ y + z + w ≦ 50, and the balance be x.

Next, as shown in FIG. 8, the soft magnetic film according to the present invention has an amorphous phase mainly composed of an oxide (or nitride) of the element M and Fe and / or Co. And a microcrystalline phase mainly composed of
Since the amorphous phase is mainly formed of the oxide of the element M, the amorphous phase exhibits a high specific resistance ρ, and also exhibits a high specific resistance for the entire film. In particular, when Co is added together with or instead of Fe, the microcrystalline phase also contains oxygen,
The microcrystalline phase also shows a high specific resistance ρ, and the specific resistance ρ of the entire film
Is higher than that of the Fe-MO film.

When Co is contained in the soft magnetic film, the uniaxial anisotropy of the soft magnetic film is several times larger than the uniaxial anisotropy of the Fe—MO film. Has very good frequency characteristics of magnetic permeability. However, when Co is added to the soft magnetic film, Fe-MO is added.
The saturation magnetic flux density is lower than that of the film.

Further, in the present invention, Fe and / or C
The crystal structure of the microcrystalline phase mainly composed of o includes a bcc structure (body-centered cubic structure), an fcc structure (face-centered cubic structure), and h
Any of a cp structure (dense hexagonal structure) may be used, but more preferably, most of the crystal structure is formed by a bcc structure. The average crystal grain size of the microcrystalline phase is preferably 30 nm or less.

[0052]

5 and 6 show the structure of an inductor according to the present invention. FIG. 5 is a plan view and FIG.
FIG. 6 is a sectional view taken along line 6-6 of FIG. As shown in FIG. 6, an extraction electrode 31 is formed on a substrate 30. The extraction electrode 31 has a role as a terminal. An insulating film 32, a magnetic film 33, and an insulating film 34 are sequentially stacked on the substrate 30 and the extraction electrode 31, and a spiral coil-shaped planar coil 35 is formed on the insulating film 34.
The central portion of the planar coil 35 is connected to the extraction electrode 31 via a through hole formed in the insulating film 32, the magnetic film 33 formed of the soft magnetic multilayer film of the present invention, and the insulating film 34. Further, an insulating film 36 covering the planar coil 35 is formed, and a magnetic layer 37 made of the soft magnetic multilayer film of the present invention is formed on the insulating film 36. An extraction electrode 38 extends from the end of the planar coil 35 onto the substrate 30. The extraction electrode 38 also has a function as a terminal similarly to the extraction electrode 31.

The planar coil 35 is made of a highly conductive metal material such as copper, silver, gold, aluminum or an alloy thereof, and is electrically connected in series or in parallel depending on inductance, DC weight characteristics, size, and the like. It can be further arranged vertically or horizontally with an insulating film interposed therebetween. Also, a plurality of planar coils 35 are provided in parallel,
The transformer can be configured by facing the electrodes 5 with the insulating film 36 interposed therebetween. Further, the planar coil 35 can be formed into various shapes by forming a conductive layer on a substrate and then performing photoetching. As a method for forming the conductive layer, an appropriate method such as breath press bonding, plating, metal spraying, vacuum evaporation, sputtering, ion plating, and screen printing firing may be used.

The insulating films 32, 34 and 36 are preferably made of a polymer film such as polyimide, or an inorganic film such as SiO ₂ , glass or hard carbon film. The insulating films 32, 34, and 36 are formed by a method such as baking after paste printing or spin coating, a hot-dip plating method, thermal spraying, vapor phase plating, vacuum deposition, sputtering, or ion plating.

FIG. 7 is a longitudinal sectional view of a thin-film magnetic head according to an embodiment of the present invention. The thin-film magnetic head shown in FIG. 7 is formed on a trailing side end surface of a slider constituting a floating type head, and is a so-called MR / magnetic head in which a writing inductive head is stacked on a read head (reproduction head). This is an inductive composite type thin film magnetic head. The thin-film magnetic head shown in FIG. 7 is an inductive head.

Reference numeral 40 shown in FIG. 7 is a lower core layer 40 formed of the soft magnetic multilayer film of the present invention. A gap layer 41 made of a non-magnetic insulating material such as Al ₂ O ₃ is formed on the lower core layer 40, and a resist material or another organic material is formed on the gap layer 41. The formed insulating layer 42 is formed.

On the insulating layer 42, a coil layer 43 is spirally formed of a conductive material having a low electric resistance such as Cu. The coil layer 43 is formed so as to go around a base end 45b of an upper core layer 45 described later, but only a part of the coil layer 43 appears in FIG. An insulating layer 44 such as an organic resin material is formed on the coil layer 43.

On the insulating layer 44, an upper core layer 45 made of the soft magnetic multilayer film of the present invention is formed.
The front end portion 45a of the upper core layer 45 is joined to the lower core layer 40 via the gap layer 41 at a portion facing the recording medium to form a magnetic gap having a gap length Gl. The base end 45b of the upper core layer 45 is magnetically joined to the lower core layer 40 through holes formed in the gap layer 41 and the insulating layer 42.

In the inductive head for writing, when a recording current is applied to the coil layer 43, the lower core layer 40
In addition, a recording magnetic field is induced in the upper core layer 45, and a magnetic signal is recorded on a recording medium such as a hard disk by a leakage magnetic field from a magnetic gap portion between the lower core layer 40 and the tip 45a of the upper core layer 45.

In the present invention, the magnetic films 33 and 37 of the inductor shown in FIGS. 5 and 6 and the lower core layer 40 and the upper core layer 45 of the thin film magnetic head shown in FIG.
The soft magnetic film 7 is formed by a soft magnetic multilayer film 5 in which a plurality of soft magnetic films 7 are stacked. As shown in FIG. 1, the soft magnetic film 7
An altered layer 8 of an oxide film or a nitride film is formed on the surface, and a portion other than the altered layer 8 is an unaltered layer 9 having soft magnetic characteristics. The altered layer 8 has a capacitance in a high-frequency band and functions as a magnetic shield film.

In the present invention, the soft magnetic film 7 is formed as shown in FIG.
As shown in the figure, a microcrystalline phase mainly composed of Fe and / or Co, Ti, Zr, Hf, V, Nb, Ta, Mo,
One or more elements M selected from W, Al, Si, Cr, P, C, B, Ga, Ge and rare earth elements, and an amorphous phase containing a large amount of elements O and / or N are mixed. It has a film structure. The altered layer 8 of an oxide film or a nitride film formed on the surface of the soft magnetic film 7 also contains Fe and / or Co and the element M, though in trace amounts, Is the same as the unaltered layer 9 having soft magnetic characteristics, and the composition of the soft magnetic multilayer film 5 is close to a single layer.

However, in the present invention, the content of oxygen atoms or nitrogen atoms contained in the altered layer 8 and the non-altered layer 9 constituting the soft magnetic film 7 is significantly different, and the oxide film or the nitride film is positively formed. The deteriorated layer 8 contains a large amount of oxygen atoms or nitrogen atoms, and has insulating properties. Further, as described above, the altered layer 8 has an electric capacity in a high frequency band, and has a function of magnetically shielding between the unaltered layers 9 having soft magnetic characteristics.

As described above, by forming the soft magnetic multilayer film 5 with the multilayer structure of the soft magnetic film 7, it is possible to prevent the magnetic saturation by increasing the film thickness. Since the deteriorated layer 8 formed on the surface of the magnetic layer 7 is magnetically shielded between the non-degenerated layers 9 having soft magnetic properties, it is possible to reduce the core loss at high frequencies. Therefore, the above-described inductor and thin-film magnetic head using the soft magnetic film can have excellent high-frequency characteristics.

In order to form the soft magnetic multilayer film 5 shown in FIG. 1, a sputtering method, a vapor deposition method, or the like may be used. As the sputtering apparatus, an existing apparatus such as RF bipolar sputtering, DC sputtering, magnetron sputtering, tripolar sputtering, ion beam sputtering, and facing target sputtering may be used.

A target for forming the soft magnetic film 7 is prepared in the sputtering apparatus, and the target is formed by sputtering discharge.
The soft magnetic film 7 is formed on the substrate shown in FIG. As a method of adding O ₂ (oxygen) or N ₂ (nitrogen) to the soft magnetic film 7 during this film formation, O ₂ gas or N ₂ gas is mixed with an inert gas such as Ar. (A
(r + O ₂ ) mixed gas or reactive sputtering that performs sputtering in an (Ar + N ₂ ) atmosphere, or a composite target using an oxide or nitride chip of element M in an Ar atmosphere, or an Ar + O ₂ , Ar + N ₂ atmosphere The method of sputtering in the inside is effective.

First, a first soft magnetic film 7 is formed on the substrate 10 shown in FIG.
₂ (oxygen) or N ₂ (nitrogen) is sealed, and an altered layer 8 of an oxide film or a nitride film is formed on the surface of the soft magnetic film 7. The altered layer 8 has an electric capacity with respect to a high frequency. Then, the deteriorated layer 8 is again formed by sputter discharge.
A second soft magnetic film 7 is formed thereon. After the film formation, the sputter discharge is stopped, oxygen or nitrogen is sealed, and the surface of the soft magnetic film 7 is deteriorated by an oxide film or a nitride film. The layer 8 is formed. By repeating this process, a soft magnetic multilayer film 5 having a multilayer structure in which the non-altered layer 9 having soft magnetic properties except for the altered layer 8 and the insulating altered layer 8 are alternately laminated is formed. can do.

As a method of forming the altered layer 8 of the oxide film on the surface of the soft magnetic film 7, as described above, a method of forming the soft magnetic film 7 and then encapsulating oxygen in the apparatus is as follows. The deteriorated layer 8 of an oxide film can be formed on the surface of the soft magnetic film 7 by exposing the formed soft magnetic film 7 to the atmosphere. When the composition of the soft magnetic film 7 contains O (oxygen), it is preferable to form an altered layer 8 of an oxide film on the surface of the soft magnetic film 7. Alternatively, when N (nitrogen) is contained in the composition of the soft magnetic film 7, after the soft magnetic film 7 is formed, nitrogen is encapsulated to form a deteriorated layer of a nitride film on the surface of the soft magnetic film 7. 8 is preferably formed.

Next, the composition of the soft magnetic film 7 used in the present invention will be described. The soft magnetic film 7 is made of (Fe _1-a Co _a )
It is formed by the composition consisting of _x M _y L _z O _w. However,
M is Zr, Hf, V, Nb, Ta, Mo, W, Al,
One or more elements selected from Si, Cr, P, C, B, Ga, Ge and rare earth elements, and L is P
t, Ru, Rh, Pd, Ir, Os, Sn, Ti, A
u, Ag, or one or more elements selected from Cu, and a indicating a composition ratio is 0 ≦ a ≦ 0.5, x, y,
z and w are at%, 5 ≦ y ≦ 30, 0 ≦ z ≦ 20, 5 ≦
w ≦ 40, 10 ≦ y + z ≦ 40, and the remainder is x.

More preferably, a indicating the composition ratio of the soft magnetic film is 0 ≦ a ≦ 0.3, and x, y, z and w are at%.
Where 7 ≦ y ≦ 15, 0 ≦ z ≦ 5, 20 ≦ w ≦ 35, and the remainder is x. In the present invention, the element M is
It is preferable that the element contains one or both of Zr and Hf.

[0070] Alternatively, in the present invention, the soft magnetic film 7 is formed by a composition of _{(Co 1-a T a)} x M y L z O w. Here, T is an element containing one or both of Fe and Ni, and M is Ti, Zr, Hf, Nb, T
a, Cr, Mo, Si, P, C, W, B, Al, Ga,
One or more elements selected from Ge and rare earth elements, and L is Au, Ag, Cu, Ru, Rh, O
one or more elements selected from s, Ir, Pt, and Pd, and a indicating a composition ratio is 0 ≦ a ≦ 0.7,
x, y, z, w are at%, 3 ≦ y ≦ 30, 0 ≦ z ≦ 2
0, 7 ≦ w ≦ 40, 20 ≦ y + z + w ≦ 60, and the remainder is x. More preferably, a indicating the composition ratio of the soft magnetic film is 0 ≦ a ≦ 0.3, x, y, z, and w are at%, and 7 ≦ y ≦ 15, 0 ≦ z ≦ 19, and 20 ≦ w ≦ 3
5, 30 ≦ y + z + w ≦ 50, with the balance being x.

In the present invention, the element T is preferably Fe. In this case, the concentration ratio between Co and Fe is
It is preferable that 0.3 ≦ {Co / (Co + Fe)} ≦ 0.8. If the element T is Fe and the ratio of Co to Fe is 0.3 ≦ {Co / (Co + Fe)} ≦ 0.8, more excellent soft magnetic characteristics and frequency characteristics can be obtained. More preferably, the ratio of Co to Fe is 7: 3. Further, N may be used instead of O, or N together with O, as one element constituting the soft magnetic film in the present invention. According to the soft magnetic film 7 of the present invention, a specific resistance of about 300 to 3000 μΩ · cm can be obtained.

As described above, in the present invention, as shown in FIG. 1, the soft magnetic multilayer film 5 has a multilayer structure in which a plurality of soft magnetic films 7 are stacked. On the surface of 7, an altered layer 8 of an oxide film or a nitride film having an electric capacity with respect to a high frequency is formed, and between the unaltered layers 9 having soft magnetic properties is magnetically shielded by the altered layer 8. I have. As described above, by forming the soft magnetic multilayer film 5 with the multilayer structure of the soft magnetic film 7, magnetic saturation can be prevented by increasing the film thickness, and the surface of each soft magnetic film 7 can be prevented. Since the non-altered layer 9 having soft magnetic properties is magnetically shielded by the altered layer 8 formed in the above, it is possible to reduce core loss at high frequencies.

In particular, in the present invention, by using only the target used for forming the soft magnetic film 7, a multilayer film structure in which the unaltered layers 9 and the altered layers 8 shown in FIG. It can be formed and the manufacturing process can be simplified. In addition, the non-altered layer 9 and the altered layer 8 of the soft magnetic film 7
Are the same in composition, the etching rates are almost the same, and the workability can be improved.

In the present invention, the inductor (FIGS. 5 and 6) and the thin-film magnetic head (FIG. 7) have been described as specific examples using the soft magnetic multilayer film 5 shown in FIG. The present invention can also be applied to a soft magnetic multilayer film of a thin film transformer provided with side and secondary side coils. The thin film and the lance using the soft magnetic multilayer film can have excellent high-frequency characteristics as in the case of the inductor and the thin-film magnetic head described above. Further, in recent years, mobile communication devices have been developed, and there is a demand for miniaturization and high frequency of the devices. Under these circumstances, for example, by applying the soft magnetic multilayer film 5 to an air-core inductor that occupies a large area among the components of an LC filter for a mobile phone, a filter having excellent high-frequency characteristics can be provided.

[0075]

According to the present invention described in detail above, for example,
It has O (oxygen) and / or N (nitrogen) in its composition, and its film structure is a microcrystalline phase mainly composed of Fe and / or Co, and a large amount of element M (Hf etc.) and O and / or N. After forming a soft magnetic film having a structure in which an amorphous phase included in the soft magnetic film is mixed, the surface of the soft magnetic film is oxidized or nitrided to form an altered layer, and the soft magnetic film having the altered layer formed on the surface Are laminated to form a multilayer film. In the present invention, the altered layer has an electric capacitance component in a high frequency band,
If the soft magnetic film is formed to be thin to form a multilayer film in order to exhibit a magnetic shielding function, core loss can be reduced and magnetic saturation can be prevented.

In particular, in the present invention, a multilayer film structure of a soft magnetic film having an altered layer on the surface can be formed only with a target necessary for forming the soft magnetic film, and the manufacturing process can be simplified. Since the constituent elements of the altered layer are the same as those of the soft magnetic film, they are excellent in workability.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a structure of a soft magnetic multilayer film according to the present invention;

FIG. 2 is a graph showing the relationship between the depth from the surface of the Fe—Hf—O film and the content of each atom in the Fe—Hf—O film having a thickness of 3.0 μm.

FIG. 3 is an experimental diagram for measuring the relationship between frequency and impedance in an Fe—Hf—O film;

FIG. 4 is a graph showing a relationship between frequency and impedance in the Fe—Hf—O film;

FIG. 5 is an enlarged plan view of a planar magnetic element (inductor) showing the structure of the embodiment of the present invention;

FIG. 6 is a sectional view taken along line 6-6 shown in FIG. 5;

FIG. 7 is a longitudinal sectional view of a thin-film magnetic head showing a structure according to an embodiment of the present invention;

FIG. 8 is a schematic view showing a film structure of a soft magnetic film according to the present invention;

FIG. 9 is a sectional view of a conventional inductor,

[Explanation of symbols]

 Reference Signs List 5 soft magnetic multilayer film 7 soft magnetic film 8 deteriorated layer 9 non-change layer 30 substrate 31, 38 extraction electrode 32, 34, 36 insulating film 33, 37 magnetic film 35 plane coil 40 lower core layer 41 gap layer 42, 44 insulating layer 43 coil layer 45 upper core layer

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01F 17/04 H01F 17/04 F (72) Inventor Toshiro Sato 1006-1 Inaba, Nagano City, Nagano Prefecture (72) Inventor Kiyoto Yamazawa 90, Joto, Matsushiro-cho, Nagano City, Nagano Prefecture (72) Inventor Yoshito Sasaki 1-7 Yukitani Otsuka-cho, Ota-ku, Tokyo Inside Alps Electric Co., Ltd. 1-7 Yutani Otsukacho Alps Electric Co., Ltd. F-term (reference) 5D033 BA08 CA01 DA02 DA31 5D093 BC05 HA05 HA06 JA01 JA06 5E049 AA01 AA04 AA09 AC01 AC05 BA12 DB04 DB14 5E070 AA01 AA11 AB02 BA11 BB02 CB04 CB12

Claims (32)

[Claims] An altered layer of an oxide film or a nitride film having electric capacity is formed on a surface of a soft magnetic film, and a plurality of soft magnetic films on which the altered layer is formed are laminated. Soft magnetic multilayer film. 2. The composition of the soft magnetic film contains O and has a structure in which a microcrystalline phase and an amorphous phase are mixed, and an altered layer of an oxide film is formed on the surface of the soft magnetic film. The soft magnetic multilayer film according to claim 1, wherein: 3. The composition of the soft magnetic film contains N and has a structure in which a microcrystalline phase and an amorphous phase are mixed, and an altered layer of a nitride film is formed on the surface of the soft magnetic film. The soft magnetic multilayer film according to claim 1, wherein: 4. The soft magnetic film is made of Fe and / or Co.
Microcrystalline phase mainly composed of Ti, Zr, Hf, V, N
b, Ta, Mo, W, Al, Si, Cr, P, C, B,
It has a structure in which one or more kinds of elements M selected from Ga, Ge and rare earth elements and an amorphous phase containing a large amount of elements O and / or N are mixed, and the surface of the soft magnetic film is oxidized. 2. The soft magnetic multilayer film according to claim 1, wherein an altered layer of a film or a nitride film is formed. 5. The soft magnetic multilayer film according to claim 4, wherein the crystal structure of the microcrystalline phase comprises one or more of a bcc structure, an hcp structure, and an fcc structure. 6. The crystal structure of the microcrystalline phase is mainly bcc
The soft magnetic multilayer film according to claim 5, comprising a structure. 7. The microcrystalline phase has an average crystal grain size of 30 n.
7. The soft magnetic multilayer film according to claim 4, wherein m is equal to or less than m. 8. The soft magnetic multilayer film according to claim 4, wherein said soft magnetic film is formed with the following composition. _{(Fe 1-a Co a)} x M y L z O w , however, M is, Zr, Hf, V, Nb , Ta, Mo,
One or more elements selected from W, Al, Si, Cr, P, C, B, Ga, Ge and rare earth elements;
L is Pt, Ru, Rh, Pd, Ir, Os, Sn, T
one or more elements selected from i, Au, Ag, and Cu, and a indicating a composition ratio is 0 ≦ a ≦ 0.5,
x, y, z, w are at%, 5 ≦ y ≦ 30, 0 ≦ z ≦ 2
0, 5 ≦ w ≦ 40, 10 ≦ y + z ≦ 40, and the remainder is x. 9. The composition ratio a of the soft magnetic film is 0 ≦ 0.
a ≦ 0.3, x, y, z, w are at%, and 7 ≦ y ≦ 1
9. The soft magnetic multilayer film according to claim 8, wherein 5, 0≤z≤5, 20≤w≤35, and the balance is x. 10. The soft magnetic multilayer film according to claim 8, wherein the element M is an element containing one or both of Zr and Hf. 11. The soft magnetic multilayer film according to claim 8, wherein the composition a of the soft magnetic film is 0 and the composition Z is 0 at%. 12. The soft magnetic multilayer film according to claim 4, wherein said soft magnetic film is formed with the following composition. _{(Co 1-a T a)} x M y L z O w , however, T is an element including Fe, one or both either of Ni, M is, Ti, Zr, Hf, Nb ,
Ta, Cr, Mo, Si, P, C, W, B, Al, G
a, Ge and one or more elements selected from rare earth elements, and L is Au, Ag, Cu, Ru, Rh,
One or more elements selected from Os, Ir, Pt, and Pd, and a indicating a composition ratio is 0 ≦ a ≦ 0.
7, x, y, z, w are at%, 3 ≦ y ≦ 30, 0 ≦ z
≦ 20, 7 ≦ w ≦ 40, and 20 ≦ y + z + w ≦ 60, and the remainder is x. 13. The value a representing the composition ratio of the soft magnetic film is 0.
≦ a ≦ 0.3, x, y, z, w are at%, and 7 ≦ y ≦ 1
5, 0 ≦ z ≦ 19, 20 ≦ w ≦ 35, 30 ≦ y + z + w
The soft magnetic multilayer film according to claim 12, wherein a relationship of ≤50 is satisfied, and the balance is x. 14. The soft magnetic multilayer film according to claim 12, wherein said element T is Fe. 15. The concentration ratio between Co and Fe is 0.3 ≦ ｛C.
The soft magnetic multilayer film according to claim 14, wherein o / (Co + Fe)｝ ≦ 0.8. 16. The soft magnetic multilayer film according to claim 8, wherein N is used instead of O or N is used together with O as one element constituting the soft magnetic film. 17. The soft magnetic film has a specific resistance of 300 to 3
The soft magnetic multilayer film according to any one of claims 4 to 16, wherein the thickness is 000 µΩ · cm. 18. A planar magnetic element, wherein a magnetic core is formed by the soft magnetic multilayer film according to claim 1. Description: 19. A filter, wherein a magnetic core is formed by the soft magnetic multilayer film according to claim 1. Description: 20. A thin-film magnetic layer comprising at least a lower core layer, an upper core layer facing the lower core layer via a magnetic gap at a portion facing the recording medium, and a coil layer for applying a recording magnetic field to both core layers. A thin-film magnetic head, wherein at least one of the lower core layer and the upper core layer is formed of the soft magnetic multilayer film according to any one of claims 1 to 16. 21. After forming a soft magnetic film having a composition of O and / or N in a film forming apparatus, oxygen or nitrogen is introduced into the apparatus to oxidize or soften the surface of the soft magnetic film. Nitriding to form an altered layer of an oxide film or a nitride film having an electric capacity on the surface, and repeating the above steps to stack a soft magnetic film having an altered layer on the surface to form a multilayer film And a method for producing a soft magnetic multilayer film. 22. After the soft magnetic film is formed, the soft magnetic film is exposed to the air to oxidize the surface of the soft magnetic film to form an altered layer of an oxide film having electric capacity on the surface. A method for manufacturing a soft magnetic multilayer film according to claim 21. 23. The soft magnetic multilayer according to claim 21, wherein when the composition of the soft magnetic film has O, the surface of the soft magnetic film is oxidized to form an altered layer of the oxide film on the surface. Manufacturing method of membrane. 24. The production of a soft magnetic multilayer film according to claim 21, wherein when the composition of the soft magnetic film has N, the surface of the soft magnetic film is nitrided to form an altered layer of a nitride film on the surface. Method. 25. The method for manufacturing a soft magnetic multilayer film according to claim 21, wherein the soft magnetic film is formed with the following composition. _{(Fe 1-a Co a)} x M y L z K w however, M is, Zr, Hf, V, Nb , Ta, Mo,
One or more elements selected from W, Al, Si, Cr, P, C, B, Ga, Ge and rare earth elements;
L is Pt, Ru, Rh, Pd, Ir, Os, Sn, T
K is one or more elements selected from i, Au, Ag, and Cu, and K is an element containing one or both of O and N, and a indicating a composition ratio is represented by 0 ≦ a ≦ 0. .
5, x, y, z, w are at%, 5 ≦ y ≦ 30, 0 ≦ z
≦ 20, 5 ≦ w ≦ 40, 10 ≦ y + z ≦ 40, and the remainder is x. 26. The value a representing the composition ratio of the soft magnetic film is set to 0.
≦ a ≦ 0.3, x, y, z, w are at%, and 7 ≦ y ≦ 1
26. The method according to claim 25, wherein 5, 0≤z≤5, 20≤w≤35, and the balance is x. 27. The method for manufacturing a soft magnetic multilayer film according to claim 25, wherein the element M is formed including one or both of Zr and Hf. 28. The composition Z of the soft magnetic film is 0 and the composition Z is
28. The method for producing a soft magnetic multilayer film according to claim 25, wherein the soft magnetic multilayer film is formed at 0 at%. 29. The method according to claim 21, wherein the soft magnetic film is formed with the following composition. _{(Co 1-a T a)} x M y L z K w However, T is an element including Fe, one or both either of Ni, M is, Ti, Zr, Hf, Nb ,
Ta, Cr, Mo, Si, P, C, W, B, Al, G
a, Ge and one or more elements selected from rare earth elements, and L is Au, Ag, Cu, Ru, Rh,
K is one or more elements selected from Os, Ir, Pt, and Pd, and K is an element containing one or both of O and N, and a indicating a composition ratio is defined as 0 ≦ a ≦
0.7, x, y, z, w are at%, and 3 ≦ y ≦ 30, 0
≦ z ≦ 20, 7 ≦ w ≦ 40, 20 ≦ y + z + w ≦ 60, and the remainder is x. 30. The value a representing the composition ratio of the soft magnetic film is set to 0.
≦ a ≦ 0.3, x, y, z, w are at%, and 7 ≦ y ≦ 1
5, 0 ≦ z ≦ 19, 20 ≦ w ≦ 35, 30 ≦ y + z + w
30. The method for producing a soft magnetic multilayer film according to claim 29, wherein ≤50 and the balance is x. 31. The element T is formed of Fe.
30. The method for producing a soft magnetic multilayer film according to 9 or 30. 32. The concentration ratio of Co and Fe is set to 0.3 ≦ ｛C
32. The method for producing a soft magnetic multilayer film according to claim 31, wherein o / (Co + Fe)｝ ≤0.8.