JP2003178874A - Manufacturing method of display element - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve patterning accuracy while maintaining characteristics such as low cost, high throughput, and high freedom of choice of optical materials. <P>SOLUTION: A step is formed in correspondence with a given position where a luminous material or a hole injection layer is arranged, and then, a liquid material to become a luminous material or a material for a hole injection layer is applied by an ink jet method. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a display element in which an optical material such as a fluorescent material (light emitting material) or a light modulating material is selectively arranged at a predetermined position above a substrate.

BACKGROUND ART LCD (Liquid Crystal Display) and EL
Matrix-type display elements such as (Electroluminescense) display elements are widely used in various types as light-weight, thin, high-quality and high-definition display elements. The matrix type display element is composed of a matrix of bus wirings, an optical material (a light emitting material or a light modulating material), and other structure as required.

Here, in the case of a monochromatic matrix type display element, the wirings and electrodes need to be arranged in a matrix on the display substrate, but the optical material can be evenly applied to the entire surface of the display substrate. Is.

On the other hand, in the case of realizing a so-called color matrix type display element with an EL display element of the type that emits light by itself, for example, for each pixel, three pixels corresponding to the three primary colors of light, RGB, are provided. It is necessary to arrange electrodes and apply an optical material corresponding to any of RGB to each pixel electrode. That is, it is necessary to selectively dispose the optical material at a predetermined position.

Therefore, development of a method for patterning an optical material is desired, and effective patterning methods include etching and coating.

The steps in the case of etching are as follows.

First, a layer of optical material is formed on a display substrate. Next, a resist film is formed on the layer of the optical material,
The resist film is exposed through a mask and then patterned. Then, etching is performed to pattern the layer of the optical material according to the pattern of the resist.

However, in this case, the number of steps is large, and the cost of each material and device is high, resulting in high cost. Moreover, since the number of steps is large and each step is complicated, the throughput is poor. Further, depending on the chemical properties of the optical material, the resistance to a resist or etching solution is low, and these steps may not be possible.

On the other hand, the steps in the case of coating are as follows.

First, an optical material is dissolved in a solvent to form a liquid, and the liquid optical material is placed at a predetermined position on a display substrate.
It is selectively applied by an inkjet method or the like. Then, if necessary, the optical material is solidified by heating or light irradiation. In this case, the number of steps is small, and the cost of each material and device is low, so the cost is low. Also,
Throughput is good because the number of steps is small and each step is simple. Furthermore, these steps are possible if liquefaction is possible regardless of the chemical properties of the optical material.

[0010]

The patterning method by coating as described above seems to be easily feasible. However, when applying an optical material by an inkjet method, the optical material must be diluted several tens of times or more with a solvent, so its fluidity is high, and after application, it is applied at a coating position until solidification is completed. Proved difficult to hold.

That is, the patterning accuracy is poor due to the fluidity of the liquid optical material. For example, an optical material applied to a pixel flows out to an adjacent pixel, which deteriorates the optical characteristics of the pixel. Further, since the coating area varies from pixel to pixel, the coating thickness also varies, and the optical characteristics of the optical material also vary.

[0012] The problem is that when applied, it is liquid.
Although it is remarkable in a light emitting material for an EL display element which is solidified later, it is a problem similarly occurring when a liquid crystal which is in a liquid state after and after being applied is selectively applied onto a display substrate. .

The present invention has been made by paying attention to the unsolved problems of the conventional techniques, and maintains the features such as low cost, high throughput, and high degree of freedom of optical materials. At the same time, it is an object of the present invention to provide a method for manufacturing a display element in which a liquid optical material can be reliably arranged at a predetermined position.

[0014]

A method of manufacturing a display element according to the present invention is a method of manufacturing a display element in which a light emitting material or a hole injection layer is arranged corresponding to a predetermined position, The method is characterized by including a step of forming a step at a boundary with the periphery of a predetermined position.

In the method of manufacturing a display element described above, it is preferable that the step be formed so that the predetermined position is lower than the periphery of the predetermined position.

In the above method of manufacturing a display element, the light emitting material or the hole injection layer may be arranged corresponding to the predetermined position by applying a liquid material. An inkjet method can be used for applying the liquid material.

The above method for manufacturing a display element may further include a step of forming a data line, a step of forming a signal line, and a step of forming a switching element corresponding to the predetermined position. It is preferable that the display element manufacturing method includes a step of improving the lyophilicity of the liquid material at the predetermined position with respect to the surroundings of the predetermined position.

In the above method for manufacturing a display element, before applying the liquid material, it is possible to improve the lyophilicity of the liquid material at the predetermined position with respect to the surroundings of the predetermined position by using plasma irradiation. It is possible.

The plasma irradiation can be performed by using one gas selected from O ₂ , CF ₄ , and Ar as a plasma raw material.

Further, the plasma irradiation is carried out by O ₂ , C
Alternatively, a mixed gas of at least two gases selected from F ₄ and Ar may be used.

The matrix type display device of the present invention has a structure in which an optical material is selectively arranged at a predetermined position on a display substrate, and the optical material is liquid at least when applied to the predetermined position. A matrix type display device having a step for selectively applying the optical material at a boundary portion between the predetermined position and its periphery.

Since the matrix type display device of the present invention has the above-mentioned steps, even if the optical material is liquid when applied, it can be selectively placed at a predetermined position. . That is, the matrix type display element of the present invention is a high performance matrix type display element in which an optical material is accurately arranged at a predetermined position.

The method of manufacturing a matrix type display device of the present invention has a structure in which an optical material is selectively arranged at a predetermined position on a display substrate, and the optical material is applied at least at the predetermined position. A method of manufacturing a liquid crystal matrix display element, the method comprising: forming a step for applying the liquid optical material at a boundary portion between the predetermined position above the display substrate and its periphery; Applying the liquid optical material to the predetermined position using a step,
Is equipped with.

According to the above-described method for manufacturing a matrix type display element, since the step is formed before the liquid optical material is applied, it is possible to prevent the liquid optical material applied at a predetermined position from spreading to the surroundings. Can be suppressed by. As a result, it is possible to improve the patterning accuracy while maintaining the features such as low cost, high throughput, and high flexibility of the optical material.

In the above method of manufacturing a matrix type display element, the step is provided, and the predetermined position is formed in a concave shape lower than its surroundings, and the liquid optical material of the display substrate is applied. The liquid optical material may be applied to the predetermined position with the surface facing upward.

By doing so, when the surface of the display substrate on which the optical material is applied faces upward, the concave portion formed by the step also faces upward. When the liquid optical material is applied to the inside of the recess, gravity causes the optical material to accumulate in the recess, and the applied liquid optical material does not have gravity or surface tension unless it is extremely large. Since it can be accumulated in the concave portion due to, for example, there is no problem even if the optical material is solidified by drying in this state, and highly precise patterning can be performed.

On the contrary, it is also possible to provide the step so as to form a convex shape in which the predetermined position is higher than its surroundings. The liquid optical material may be applied to the predetermined position with the surface of the display substrate on which the liquid optical material is applied facing downward.

By doing so, when the surface of the display substrate on which the optical material is applied faces downward, the convex portion formed by the step also faces downward. Then, when the liquid optical material is applied to the convex portion, the optical material comes to gather on the convex portion due to the surface tension, and the applied liquid optical material is affected by the surface tension unless the amount is extremely large. Since it can be accumulated on the convex portion, there is no problem even if the optical material is solidified by drying in this state, and highly precise patterning can be performed.

A second method for manufacturing a matrix type display element of the present invention has a structure in which an optical material is selectively arranged at a predetermined position on a display substrate, and the optical material is applied to at least the predetermined position. In this case, the method is a method of manufacturing a liquid crystal matrix display element, which comprises the steps of forming a plurality of first bus lines on the display substrate and displaying a step for applying the liquid optical material. Forming a boundary between the predetermined position on the substrate and its surroundings; applying the liquid optical material to the predetermined position using the step; and a plurality of intersecting the first bus wirings. And forming the second bus wiring so as to cover the optical material.

By doing so, a step is formed before the liquid optical material is applied, so that the step can prevent the liquid optical material applied at a predetermined position from spreading to the surroundings. . As a result, it is possible to improve the patterning accuracy while maintaining the features such as low cost, high throughput, and high degree of freedom of the optical material.

A third method for manufacturing a matrix type display device of the present invention has a structure in which an optical material is selectively arranged at a predetermined position on a display substrate, and the optical material is applied at least to the predetermined position. In this case, the method is a method for manufacturing a liquid crystal type matrix display element, wherein a step of forming a plurality of first bus wirings above the display substrate, and a step for applying the liquid optical material, Forming a boundary portion between the predetermined position on the display substrate and its periphery; applying the liquid optical material to the predetermined position using the step; and a peeling layer on the peeling substrate. A step of forming a plurality of second bus wirings via the above, and a structure peeled from the peeling layer on the peeling substrate on the display substrate coated with the optical material, the first bus wirings And the second bus wiring intersect Comprises transferring the steps of, a so.

By doing so, since the step is formed before the liquid optical material is applied, it is possible to prevent the liquid optical material applied at a predetermined position from spreading around. . As a result, it is possible to improve the patterning accuracy while maintaining the features such as low cost, high throughput, and high degree of freedom of the optical material. Further, after the optical material is arranged, the step of forming the second bus wiring layer on the upper surface of the optical material and etching the layer is not performed, and therefore the underlying material such as the optical material is damaged by the subsequent step. Can be reduced.

A fourth method for manufacturing a matrix type display device of the present invention has a structure in which an optical material is selectively arranged at a predetermined position on a display substrate, and the optical material is applied at least to the predetermined position. In this case, it is a method of manufacturing a liquid crystal matrix display element, in which a wiring including a plurality of scanning lines and signal lines, a pixel electrode corresponding to the predetermined position, and a state of the wiring are provided on the display substrate. A step of forming a switching element for controlling the state of the pixel electrode, and a step for applying the liquid optical material at a boundary portion between the predetermined position on the display substrate and its periphery. And a step of applying the liquid optical material to the predetermined position using the step.

By doing so, a step is formed before the liquid optical material is applied, so that the step can prevent the liquid optical material applied at a predetermined position from spreading to the surroundings. . As a result, it is possible to improve the patterning accuracy while maintaining the features such as low cost, high throughput, and high degree of freedom of the optical material.

A fifth method for manufacturing a matrix type display device of the present invention has a structure in which an optical material is selectively arranged at a predetermined position on a display substrate, and the optical material is applied at least to the predetermined position. In this case, it is a method of manufacturing a liquid crystal matrix display element, and a step of forming a step for applying the liquid optical material at a boundary portion between the predetermined position on the display substrate and the periphery thereof. A step of applying the liquid optical material to the predetermined position by using the step, a wiring including a plurality of scanning lines and signal lines on a peeling substrate via a peeling layer, and a wiring on the predetermined position. Forming a corresponding pixel electrode and a switching element for controlling the state of the pixel electrode according to the state of the wiring;
Transferring the structure peeled from the peeling layer on the peeling substrate onto the display substrate coated with the optical material.

By doing so, since the step is formed before the liquid optical material is applied, it is possible to prevent the liquid optical material applied at a predetermined position from spreading around. . As a result, it is possible to improve the patterning accuracy while maintaining the features such as low cost, high throughput, and high degree of freedom of the optical material. Further, after the optical material is arranged, a step of forming a wiring layer or a pixel electrode layer on the upper surface and etching these is not performed. Damage, scan lines,
It is possible to reduce damage to the signal line, the pixel electrode, the switching element, etc. due to the application of the optical material or the like.

In the above-mentioned method for manufacturing a matrix type display element, the step is a concave step which is formed by using the first bus wiring and is lower at the predetermined position than at the periphery thereof. In the step of applying the liquid optical material, the liquid optical material may be applied to the predetermined position with the surface of the display substrate on which the liquid optical material is applied facing upward.

In the above-mentioned method for manufacturing a matrix type display element, since the step is formed before applying the liquid optical material, the step prevents the liquid optical material applied at a predetermined position from spreading to the surroundings. can do. As a result, it is possible to improve the patterning accuracy while maintaining the features such as low cost, high throughput, and high degree of freedom of the optical material. Further, if the step is formed by using the first bus wiring, some or all of the steps of forming the first bus wiring also serve as the step of forming the step, so that an increase in the number of steps is suppressed. it can.

If a step is formed using wiring such as a scanning line, a signal line, or a common power supply line, part or all of the step of forming the wiring also serves as the step of forming the step. Therefore, the increase in the number of steps can be suppressed.

In the above-mentioned method for manufacturing a matrix type display element, the predetermined position is a convex step which is higher than its surroundings, and in the step of applying the liquid optical material, the display substrate is coated with the liquid optical material. The liquid optical material may be applied to the predetermined position with the surface on which the liquid optical material is applied facing downward. In this case, the pixel electrode can be used to form the step.

In this way, as a result of forming the step using the pixel electrode, part or all of the step of forming the pixel electrode also serves as the step of forming the step, so that an increase in the number of steps is suppressed. it can.

The method for manufacturing a matrix type display device described above includes a step of forming an interlayer insulating film, the step is formed by using the interlayer insulating film, and the predetermined position is lower than the surrounding area. In the step of applying the liquid optical material, the liquid optical material is applied to the predetermined position with the surface of the display substrate on which the liquid optical material is applied facing upward. It may be applied.

By doing so, as a result of forming the step using the interlayer insulating film, part or all of the step of forming the interlayer insulating film also serves as the step of forming the step. Can be suppressed.

The above method for manufacturing a matrix type display device further comprises a step of forming a light shielding layer, the step is formed by using the light shielding layer, and the predetermined position is lower than the surrounding area. In the step of applying the liquid optical material, the liquid optical material is applied to the predetermined position with the surface of the display substrate on which the liquid optical material is applied facing upward. You may do it.

By doing so, as a result of forming the step using the light shielding layer, part or all of the step of forming the light shielding layer also serves as the step of forming the step, so that the number of steps is increased. Can be suppressed.

In the above-mentioned method for manufacturing a matrix type display element, the step of forming the step may be performed by applying a liquid material and then selectively removing the step. As the liquid material, for example,
Resists can be applied, and if resists are applied,
A resist film may be spin-coated on the surface of the display substrate to form a resist film having an appropriate thickness, and the resist film may be exposed and etched to form a recess corresponding to a predetermined position, thereby forming a step. it can.

By doing so, the step of forming the step can be simplified, and at the same time, the step having a large height difference can be easily formed while reducing the damage to the underlying material.

In the above-mentioned method for manufacturing a matrix type display element, in the step of forming the step, the step is formed on the peeling substrate via the peeling layer, and the step is formed by peeling from the peeling layer on the peeling substrate. May be transferred onto the display substrate.

By doing so, since the step formed separately on the separation substrate is transferred, the step of forming the step can be simplified, and at the same time, the damage to the underlying material can be reduced. At the same time, it is possible to easily form a step having a large height difference.

In the above-mentioned method for manufacturing a matrix type display device, the height dr of the step may satisfy the following expression (1).

Da <dr (1) where da is the coating thickness per time of the liquid optical material.

In this way, it is possible to prevent the optical material from flowing out over the concave step and around the predetermined position without depending on the surface tension of the liquid optical material.

In the above method of manufacturing a matrix type display device, the following expression (2) may be satisfied.

Vd / (db.r)> Et (2) where Vd is a drive voltage applied to the optical material, and d
b is the sum of coating thicknesses of the liquid optical material, r is the concentration of the liquid optical material, and Et is the minimum electric field strength (threshold electric field strength) at which a change in the optical characteristics of the optical material appears.

As a result, the relationship between the coating thickness and the driving voltage is clarified, and the occurrence of the electro-optical effect of the optical material is compensated.

In the above-mentioned method of manufacturing a matrix type display element, the height dr of the step may satisfy the following expression (3).

[0057] df = dr (3) However, df is the thickness of the optical material at the time of completion.

By doing so, it is possible to secure the flatness between the step and the optical material at the time of completion, and it becomes possible to make the change of the optical characteristics of the optical material uniform and prevent the short circuit.

In the above-described method for manufacturing a matrix type display element, the thickness df at the time of completion may satisfy the following expression (4).

Vd / df> Et (4) where Vd is the drive voltage applied to the optical material, and E
t is the minimum electric field strength (threshold electric field strength) at which a change in optical characteristics of the optical material appears.

By doing so, the relationship between the coating thickness and the driving voltage is clarified, and the occurrence of the electro-optical effect of the optical material is compensated.

In a sixth method for manufacturing a matrix type display element of the present invention, a step of making the lyophilic property of the predetermined position on the display substrate relatively stronger than the lyophilic property of the surroundings, and the predetermined position. And a step of applying the liquid optical material.

By doing so, the lyophilicity of the predetermined position is strengthened before the liquid optical material is applied. Is easy to collect in a predetermined position,
If the difference in lyophilicity between the predetermined position and its surroundings is made sufficiently large, the liquid optical material applied at the predetermined position will not spread to the surroundings.

As a result, while maintaining characteristics such as low cost, high throughput, and high degree of freedom of optical materials,
It is possible to improve the accuracy of patterning.

The step of making the lyophilicity at a predetermined position on the display substrate relatively stronger than the lyophilicity of the surroundings is as follows.
It is conceivable to increase the lyophilicity of the predetermined position, increase the liquid repellency around the predetermined position, or both.

A seventh method of manufacturing a matrix type display device of the present invention has a structure in which an optical material is selectively arranged at a predetermined position on a display substrate, and the optical material is applied at least to the predetermined position. In this case, the method is a method for manufacturing a liquid-state matrix display element, which comprises a step of forming a plurality of first bus wirings on the display substrate, and a step of lyophilicity of the predetermined position on the display substrate. A step of relatively strengthening the lyophilicity of the surroundings; a step of applying the liquid optical material to the predetermined position; and a plurality of second bus wirings intersecting with the first bus wirings. And a step of forming so as to cover the material.

The eighth method of manufacturing a matrix type display device of the present invention has a structure in which an optical material is selectively arranged at a predetermined position on a display substrate, and the optical material is applied at least to the predetermined position. In this case, the method is a method for manufacturing a liquid-state matrix display element, which comprises a step of forming a plurality of first bus wirings on the display substrate, and a step of lyophilicity of the predetermined position on the display substrate. A step of relatively strengthening the lyophilicity of the surroundings, a step of applying the liquid optical material to the predetermined position, and a plurality of second bus wirings formed on the peeling substrate via a peeling layer. And a structure peeled from the peeling layer on the peeling substrate on a display substrate coated with the optical material so that the first bus wiring and the second bus wiring intersect with each other. And a step of transferring to.

By doing so, for example, after the optical material is disposed, the step of forming the second bus wiring layer on the upper surface of the optical material and etching the layer is not performed. It is possible to reduce the damage to the underlayer material in the subsequent step.

The ninth method for manufacturing a matrix type display device of the present invention has a structure in which an optical material is selectively arranged at a predetermined position on a display substrate, and the optical material is applied at least to the predetermined position. In this case, it is a method of manufacturing a liquid crystal matrix display element, in which a wiring including a plurality of scanning lines and signal lines, a pixel electrode corresponding to the predetermined position, and a state of the wiring are provided on the display substrate. A step of forming a switching element for controlling the state of the pixel electrode accordingly, and a step of making the lyophilicity of the predetermined position on the display substrate relatively stronger than the lyophilicity of its surroundings. And applying the liquid optical material to the predetermined position.

The tenth method of manufacturing a matrix type display device of the present invention has a structure in which an optical material is selectively arranged at a predetermined position on a display substrate, and the optical material is applied to at least the predetermined position. In this case, the method is a method for manufacturing a liquid crystal matrix display element, wherein a step of making the lyophilic property of the predetermined position on the display substrate relatively stronger than the lyophilic property of the surroundings thereof, The step of applying the liquid optical material, the wiring including a plurality of scanning lines and signal lines on the peeling substrate via the peeling layer, the pixel electrode corresponding to the predetermined position, and the wiring state. A step of forming a switching element for controlling the state of the pixel electrode, and transferring the structure peeled from the peeling layer on the peeling substrate onto the display substrate coated with the optical material. And the process of That.

By doing so, for example, after the optical material is arranged, a step of forming a wiring layer or a pixel electrode layer on the upper surface of the optical material and etching these layers is not performed. It is possible to reduce damage to a base material such as a material due to a subsequent process and damage to a scanning line, a signal line, a pixel electrode, a switching element, or the like due to application of an optical material or the like.

In the above-described method for manufacturing a matrix type display element, a distribution having a strong liquid repellency is formed along the first bus wiring on the display substrate so that the parent of the predetermined position on the display substrate is formed. The liquid property may be made relatively stronger than the lyophilic property around it.

By doing so, as a result of forming a strongly lyophilic distribution along the first bus wiring, part or all of the step of forming the first bus wiring is carried out at the parent of the predetermined position. Since it also serves as a step of making the lyophilicity relatively stronger than the surrounding lyophilicity, it is possible to suppress an increase in the number of steps.

Further, in the above-mentioned method for manufacturing a matrix type display device, by forming a distribution having a strong liquid repellency along the wiring on the display substrate, the lyophilic property of the predetermined position on the display substrate is formed. Can be made relatively stronger than the lyophilicity of its surroundings.

By doing so, part or all of the step of forming the wiring also serves as a step of making the lyophilicity at the predetermined position relatively stronger than the lyophilicity of the surroundings. It is possible to suppress an increase in the number of steps.

In the above-mentioned method for manufacturing a matrix type display device, the lyophilic property of the pixel electrode surface on the display substrate is strengthened so that the lyophilic property of the predetermined position on the display substrate is improved. You may make it relatively strong rather than liquid.

By doing so, the lyophilicity of the surface of the pixel electrode is strengthened, and as a result, part or all of the process of forming the pixel electrode is made more lyophilic at the predetermined position than the lyophilicity around it. Since it also serves as a step of relatively strengthening, an increase in the number of steps can be suppressed.

In the above-described method for manufacturing a matrix type display element, the step of forming an interlayer insulating film is provided, and by forming a distribution having a strong liquid repellency along the interlayer insulating film on the display substrate, the display The lyophilicity of the predetermined position on the substrate may be made relatively stronger than the lyophilicity of the surroundings.

By doing so, a strong lyophilic distribution is formed along the interlayer insulating film, and as a result, a part or all of the step of forming the interlayer insulating film changes the lyophilic property at the predetermined position. Since it also serves as a step of making it relatively stronger than the surrounding lyophilicity, an increase in the number of steps can be suppressed.

The method of manufacturing a matrix-type display device described above includes a step of forming an interlayer insulating film so that the surface of the pixel electrode is exposed, and the liquid optical material is used when the interlayer insulating film is formed. Is formed on the boundary between the exposed portion of the surface of the pixel electrode and the periphery thereof, and the liquid repellency of the surface of the interlayer insulating film is strengthened. The lyophilicity at a given position may be made relatively stronger than the lyophilicity around it.

By doing so, a concave step is formed by the interlayer insulating film before the liquid optical material is applied, and the liquid repellency of the surface of the interlayer insulating film becomes strong, so that a predetermined level is obtained. The lyophilicity of the position is relatively stronger than the lyophilicity of its surroundings. Therefore, it is possible to more reliably prevent the liquid optical material applied at the predetermined position from spreading to the surroundings. As a result, low cost,
It is possible to further improve the patterning accuracy while maintaining the characteristics such as high throughput and high degree of freedom of the optical material.

In the above-mentioned method for manufacturing a matrix type display device, a step of forming a light shielding layer is provided, and a distribution having strong liquid repellency is formed along the light shielding layer on the display substrate, so that the display substrate is formed. The lyophilicity at the predetermined position may be made relatively stronger than the lyophilicity around it.

By doing so, a strong lyophilic distribution is formed along the light-shielding layer, and as a result, part or all of the step of forming the light-shielding layer is made to have the lyophilicity at the predetermined position around it. Since it also serves as a step of making it relatively stronger than lyophilic, an increase in the number of steps can be suppressed.

In the above-mentioned method for manufacturing a matrix type display element, ultraviolet rays are irradiated or O ₂ , CF ₃ , Ar
The difference in lyophilicity between the predetermined position and its surroundings may be increased by irradiating plasma such as.

By doing so, for example, the liquid repellency of the surface of the interlayer insulating film or the like can be easily increased.

The method for manufacturing a matrix type display element may include a step of making the lyophilicity of the predetermined position on the display substrate relatively stronger than the lyophilicity of the surroundings.

The method for manufacturing a matrix type display device described above further comprises a step of forming a step for applying the liquid optical material at a boundary between the predetermined position on the display substrate and its periphery. May be.

By doing so, a predetermined step is formed before the liquid optical material is applied, and the lyophilicity at a predetermined position becomes relatively stronger than the lyophilicity around it. . It is possible to more reliably prevent the liquid optical material applied at a predetermined position from spreading around.
As a result, it is possible to further improve the patterning accuracy while maintaining the features such as low cost, high throughput, and high flexibility of the optical material.

The eleventh method of manufacturing a matrix type display element of the present invention has a structure in which an optical material is selectively arranged at a predetermined position on a display substrate, and the optical material is applied at least to the predetermined position. In this case, the method is a method for manufacturing a liquid crystal matrix display element, which comprises forming a potential distribution on the display substrate so that the predetermined position and its surroundings have different potentials, and utilizing the potential distribution. And selectively applying the liquid optical material to the predetermined position.

By doing so, the potential distribution is formed before the liquid optical material is applied, so that the potential distribution prevents the liquid optical material applied at a predetermined position from spreading around. You can As a result, it is possible to improve the patterning accuracy while maintaining the features such as low cost, high throughput, and high degree of freedom of the optical material.

The twelfth matrix-type display device manufacturing method of the present invention has a structure in which an optical material is selectively disposed at a predetermined position on a display substrate, and the optical material is applied to at least the predetermined position. In this case, in the method of manufacturing a liquid crystal matrix display element, on the display substrate, a step of forming a potential distribution so that the predetermined position and its periphery have different potentials, and the liquid optical material, And a step of applying to the predetermined position after charging to a potential at which repulsive force is generated between the predetermined position and the surroundings.

By doing so, a repulsive force is generated between the applied liquid optical material and the periphery of the predetermined position, so that the liquid optical material applied at the predetermined position is prevented from spreading around. be able to. As a result, it is possible to improve the patterning accuracy while maintaining the features such as low cost, high throughput, and high degree of freedom of the optical material.

A thirteenth method of manufacturing a matrix type display device of the present invention has a structure in which an optical material is selectively arranged at a predetermined position on a display substrate, and the optical material is applied at least to the predetermined position. In this case, the method is a method for manufacturing a liquid crystal matrix type display element, which comprises a step of forming a plurality of first bus wirings on the display substrate, and
A step of forming a potential distribution so that the predetermined position and its surroundings have different potentials, and the liquid optical material is charged to a potential at which a repulsive force is generated between the liquid optical material and the surroundings of the predetermined position. And a step of forming a plurality of second bus wirings intersecting with the first bus wiring so as to cover the optical material.

The fourteenth method of manufacturing a matrix type display device of the present invention has a structure in which an optical material is selectively arranged at a predetermined position on a display substrate, and the optical material is applied at least to the predetermined position. In this case, in a method of manufacturing a liquid crystal matrix display element, a step of forming a plurality of first bus wirings on the display substrate, and a step of forming a plurality of first bus wirings on the display substrate,
A step of forming a potential distribution so that the predetermined position and its surroundings have different potentials, and the liquid optical material is charged to a potential at which a repulsive force is generated between the liquid optical material and the surroundings of the predetermined position. A step of applying at a predetermined position, a step of forming a plurality of second bus wirings on the peeling substrate through a peeling layer, a display substrate coated with the optical material, And a step of transferring the structure peeled from the peeling layer so that the first bus wiring and the second bus wiring intersect with each other.

By doing so, after the optical material is arranged, the step of forming the second bus wiring layer on the upper surface of the optical material and etching the same is not performed. It is possible to reduce damage to the material due to subsequent steps.

The fifteenth method of manufacturing a matrix type display device of the present invention has a structure in which an optical material is selectively arranged at a predetermined position on a display substrate, and the optical material is applied at least to the predetermined position. In this case, it is a method of manufacturing a liquid crystal matrix display element, in which a wiring including a plurality of scanning lines and signal lines, a pixel electrode corresponding to the predetermined position, and a state of the wiring are provided on the display substrate. A step of forming a switching element for controlling the state of the pixel electrode in response, and a step of forming a potential distribution on the display substrate so that the predetermined position and its periphery have different potentials,
Charging the liquid optical material to a potential at which repulsive force is generated between the liquid optical material and the periphery of the predetermined position, and then applying the liquid optical material to the predetermined position.

The sixteenth method of manufacturing a matrix type display device of the present invention has a structure in which an optical material is selectively arranged at a predetermined position on a display substrate, and the optical material is applied at least to the predetermined position. In this case, it is a method of manufacturing a liquid crystal type matrix display element, in which a potential distribution is formed on the display substrate so that the predetermined position and its surroundings have different potentials, and the liquid optical material. Is charged to a potential at which a repulsive force is generated between the periphery of the predetermined position and then applied to the predetermined position, and on the peeling substrate,
A wiring including a plurality of scanning lines and signal lines, a pixel electrode corresponding to the predetermined position, and a switching element for controlling the state of the pixel electrode according to the state of the wiring are provided via a peeling layer. And a step of transferring the structure peeled from the peeling layer on the peeling substrate to the display substrate coated with the optical material.

By doing so, after the optical material is arranged, there is no step of forming a wiring layer or a pixel electrode layer on the upper surface of the optical material and etching these layers. It is possible to reduce the damage to the underlying material in the subsequent step and the damage to the scanning line, the signal line, the pixel electrode, the switching element, and the like due to the application of the optical material.

In the above-described method for manufacturing a matrix type display element, the potential distribution may be formed so that at least the periphery of the predetermined position on the display substrate is charged.

By doing so, the repulsive force can be reliably generated by charging the shaped optical material.

In the above-mentioned method for manufacturing the matrix type display element, the potential distribution may be formed by applying a voltage to the first bus wiring.

Further, in the above-mentioned method for manufacturing a matrix type display element, the potential distribution may be formed by applying a voltage to the wiring.

In the method of manufacturing a matrix type display element, the potential distribution may be formed by applying a voltage to the pixel electrode.

In the above method of manufacturing a matrix type display device, the potential distribution is such that a voltage is sequentially applied to the scanning lines, a potential is simultaneously applied to the signal lines, and a voltage is applied to the pixel electrodes via the switching elements. It may be formed by applying.

The method for manufacturing a matrix type display element may include a step of forming a light shielding layer, and the potential distribution may be formed by applying a voltage to the light shielding layer.

In this way, since the potential distribution is formed by utilizing the structure of the matrix type display element, it is possible to suppress an increase in the number of steps.

In the above method of manufacturing a matrix type display element, the potential distribution may be formed so that the predetermined position and the surroundings thereof have opposite polarities.

By doing so, an attractive force is generated between the liquid optical material and the predetermined position, and a repulsive force is generated between the liquid optical material and the periphery of the predetermined position. Accumulation is likely to occur at a predetermined position, and patterning accuracy is further improved.

As the optical material in the above-mentioned method for manufacturing a matrix type display element, for example, an inorganic or organic light emitting material can be applied. EL (Electroluminescense) is suitable as the light emitting material. In order to obtain a liquid optical material, it may be dissolved in an appropriate solvent to form a solution.

A liquid crystal material, for example, can be used as the optical material in the method of manufacturing the matrix type display element.

In the above-mentioned method for manufacturing a matrix type display element, the switching element is amorphous silicon, 6
It may be made of polycrystalline silicon formed by a high temperature process of 00 ° C. or higher or polycrystalline silicon formed by a low temperature process of 600 ° C. or lower.

By doing so, it is possible to improve the accuracy of patterning the optical material. In particular, when polycrystalline silicon formed by a low temperature process is used, cost reduction due to the use of a glass substrate and high performance due to high mobility can both be achieved.

[0113]

BEST MODE FOR CARRYING OUT THE INVENTION Preferred embodiments of the present invention will be described below with reference to the drawings.

(1) First Embodiment FIGS. 1 to 5 are views showing a first embodiment of the present invention, which is a matrix type display according to the present invention. The element and the manufacturing method thereof are applied to an active matrix type display device using an EL display element. More specifically, an example in which a light emitting material as an optical material is applied using a scanning line, a signal line, and a common power supply line as wiring is shown.

FIG. 1 is a circuit diagram showing a part of the display device 1 according to the present embodiment. This display device 1 has a plurality of scanning lines 131 and these scanning lines on a transparent display substrate. A plurality of signal lines 1 extending in a direction intersecting with 131
32 and a plurality of common power supply lines 133 extending in parallel to these signal lines 132 are respectively wired, and at each intersection of the scanning line 131 and the signal line 132,
A pixel area element 1A is provided.

For the signal line 132, the data side drive circuit 3 including a shift register, a level shifter, a video line, and an analog switch is provided. Further, for the scanning line 131, the scanning side drive circuit 4 including a shift register and a level shifter is provided. Furthermore, in each of the pixel regions 1A, a switching thin film transistor 142 to which a scanning signal is supplied to the gate electrode via the scanning line 131, and an image signal supplied from the signal line line 132 via the switching thin film transistor 142 are provided. The holding capacity cap to be held and the holding capacity cap
A current thin film transistor 143 to which an image signal held by the gate electrode is supplied to a gate electrode; The light emitting element 140 sandwiched between the pixel electrode 141 and the reflective electrode 154 is provided.

With such a configuration, when the scanning line 131 is driven and the switching thin film transistor 142 is turned on, the potential of the signal line 132 at that time is held in the holding capacitor cap, and the current is changed according to the state of the holding capacitor cap. The on / off state of the thin film transistor 143 is determined. Then, a current flows from the common power supply line 133 to the pixel electrode 141 via the channel of the current thin film transistor 143, and further a current flows to the reflective electrode 154 via the light emitting element 140. To emit light.

Here, the planar structure of each pixel region 1A has a rectangular planar shape as shown in FIG. 2 which is an enlarged plan view with the reflective electrode and the light emitting element removed.
The four sides of 41 are arranged to be surrounded by the signal line 132, the common power supply line 133, the scanning line 131, and the scanning lines for other pixel electrodes (not shown).

FIGS. 3 to 5 are sectional views sequentially showing the manufacturing process of the pixel region 1A, and correspond to the section taken along the line AA of FIG. Hereinafter, the pixel region 1 will be described with reference to FIGS.
The manufacturing process of A will be described.

First, as shown in FIG. 3 (a), a transparent display substrate 121 is formed by a plasma CVD method using TEOS (tetraethoxysilane) or oxygen gas as a raw material gas, if necessary. Forming a base protective film (not shown) made of a silicon oxide film having a thickness of about 2000 to 5000 angstroms. Next, the temperature of the display substrate 121 is set to about 350 ° C., and the semiconductor film 2 made of an amorphous silicon film having a thickness of about 300 to 700 Å is formed on the surface of the base protective film by the plasma CVD method.
00 is formed. Next, the semiconductor film 200 made of an amorphous silicon film is subjected to a crystallization process such as laser annealing or solid phase growth method to crystallize the semiconductor film 200 into a polysilicon film. In the laser annealing method, for example, a line beam having an excimer laser beam length of 400 mm is used, and the output intensity thereof is, for example, 200 mJ /
cm ² . As for the line beam, the line beam is scanned so that a portion corresponding to 90% of the peak value of the laser intensity in the short direction overlaps each region.

Next, as shown in FIG. 3B, the semiconductor film 200 is patterned to form an island-shaped semiconductor film 210, and TEOS (tetraethoxysilane), oxygen gas or the like is used as a source gas for the surface thereof. As a gate insulating film 220 made of a silicon oxide film or a nitride film having a thickness of about 600 to 1500 angstroms by plasma CVD.
To form. The semiconductor film 210 serves as a channel region and a source / drain region of the current thin film transistor 143, but semiconductor films serving as a channel region and a source / drain region of the switching thin film transistor 142 are also formed at different cross-sectional positions. . That is, in the manufacturing process shown in FIGS. 3 to 5, two types of transistors 142 and 143 are manufactured at the same time, but since they are manufactured by the same procedure, in the following description, regarding the transistors, the current thin film transistor 143 will be described.
Only the switching thin film transistor 1 will be described.
The description of 42 is omitted.

Next, as shown in FIG. 3C, a conductive film made of a metal film of aluminum, tantalum, molybdenum, titanium, tungsten or the like is formed by a sputtering method and then patterned to form a gate electrode 143A. .

In this state, high-concentration phosphorus ions are implanted, and the silicon thin film 210 is self-aligned with the gate electrode 143A in the source / drain regions 143a and 143a.
3b is formed. The portion into which the impurities are not introduced becomes the channel region 143c.

Next, as shown in FIG. 3D, after forming an interlayer insulating film 230, contact holes 232,
234 are formed and the contact holes 232, 23 are formed.
Relay electrodes 236 and 238 are embedded in the wiring 4.

Next, as shown in FIG. 3E, a signal line 132, a common power supply line 133 and a scanning line (not shown in FIG. 3) are formed on the interlayer insulating film 230. At this time, the wirings of the signal line 132, the common power supply line 133, and the scanning line are formed sufficiently thick without being caught by the thickness required as wiring.

Specifically, each wiring is formed to have a thickness of about 1 to 2 μm. Here, the relay electrode 238 and each wiring may be formed in the same process. At this time, the relay electrode 23
6 will be formed by the ITO film mentioned later.

Then, an interlayer insulating film 240 is formed so as to cover the upper surface of each wiring, a contact hole 242 is formed at a position corresponding to the relay electrode 236, and the ITO film is also embedded in the contact hole 242. And patterning the ITO film to form the signal line 132,
A pixel electrode 141 electrically connected to the source / drain region 143a is formed at a predetermined position surrounded by the common power supply line 133 and the scanning line.

Here, in FIG. 3E, the signal line 132
The portion sandwiched between the common feed line 133 and the common feed line 133 corresponds to a predetermined position where the optical material is selectively arranged. The signal line 132 is provided between the predetermined position and its surroundings.
The step 111 is formed by the common feed line 133. Specifically, a concave step 111 is formed in which the predetermined position is lower than the surroundings.

Next, as shown in FIG. 4A, a hole injection layer corresponding to a lower layer portion of the light emitting element 140 is formed by an inkjet head method with the upper surface of the display substrate 121 facing upward. A liquid-state (solution-type solution in a solvent) optical material (precursor) 114A is discharged, and this is selectively applied within a region (predetermined position) surrounded by the step 111. The specific details of the inkjet method are
Since it is not the gist of the present invention, it is omitted (for such a system, see, for example, JP-A-56-13184 and JP-A-2-167751).

As the material for forming the hole injection layer, polyphenylene vinylene whose polymer precursor is polytetrahydrothiophenylphenylene, 1,1-bis- (4-N, N-ditolylaminophenyl) cyclohexane, Examples include tris (8-hydroxyquinolinol) aluminum and the like.

At this time, the liquid precursor 114A tends to spread in the horizontal direction because of its high fluidity, but since the step 111 is formed so as to surround the applied position, the liquid precursor 114A is formed. Unless the coating amount of 114A applied once is extremely large, the liquid precursor 114A is prevented from spreading over the step 111 to the outside of the predetermined position.

Next, as shown in FIG. 4 (b), the solvent of the liquid precursor 114A is evaporated by heating or light irradiation, and a solid thin hole injection layer 1 is formed on the pixel electrode 141.
40a is formed. Here, although depending on the concentration of the liquid precursor 114A, only the thin hole injection layer 140a is formed. Therefore, when a thicker hole injection layer 140a is required, the steps of FIGS. 4A and 4B are repeatedly performed a necessary number of times to obtain a sufficient thickness as shown in FIG. 4C. The hole injection layer 140A is formed.

Next, as shown in FIG. 5A, a liquid for forming an organic semiconductor film corresponding to the upper layer portion of the light emitting element 140 is formed by an inkjet head method with the upper surface of the display substrate 121 facing upward. The optical material (organic fluorescent material) 114B (in the form of a solution dissolved in a solvent) is ejected, and this is selectively applied in the region (predetermined position) surrounded by the step 111.

Examples of the organic fluorescent material include cyanopolyphenylenevinylene, polyphenylenevinylene, polyalkylphenylene, 2,3,6,7-tetrahydro-11-oxo-1H, 5H, 11H (1) benzopyrano [6.
7,8-ij] -quinolizine-10-carboxylic acid, 1,
1-bis- (4-N, N-ditolylaminophenyl) cyclohexane, 2-13 ', 4'-dihydroxyphenyl) -3,5,7-trihydroxy-1-benzopyrylium perchlorate, tris (8 -Hydroxyquinolinol) aluminum, 2,3,6,7-tetrahydro-
9-methyl-11-oxo-1H, 5H, 11H (1)
Benzopyrano [6,7,8-ij] -quinolidine, aromatic diamine derivative (TDP), oxydiazole dimer (OXD), oxydiazole derivative (PB
D), distilarylene derivative (DSA), quinolinol metal complex, beryllium-benzoquinolinol complex (Bebq), triphenylamine derivative (MTDAT)
A), distyryl derivatives, pyrazoline dimers, rubrene, quinacridones, triazole derivatives, polyphenylene, polyalkylfluorenes, polyalkylthiophenes, azomethine zinc complexes, porphyrin zinc complexes, benzoxazole zinc complexes, phenanthroline europium complexes and the like.

At this time, the liquid organic fluorescent material 114B
Since it has high fluidity, it also tries to spread in the horizontal direction, but since the step 111 is formed so as to surround the applied position, the application amount of the liquid organic fluorescent material 114B per application is Unless the amount is extremely large, the liquid organic fluorescent material 114B is prevented from crossing the step 111 and spreading outside the predetermined position.

Next, as shown in FIG. 5 (b), the solvent of the liquid organic fluorescent material 114B is evaporated by heating or light irradiation to form a solid thin organic semiconductor film 140b on the hole injection layer 140A. Form. Here, depending on the concentration of the liquid organic fluorescent material 114B, only the thin organic semiconductor film 140b is formed. Therefore, when a thicker organic semiconductor film 140b is required, the steps of FIGS. 5 (a) and 5 (b) are repeatedly performed as many times as necessary, and FIG.
As shown in, an organic semiconductor film 140B having a sufficient thickness is formed. Hole injection layer 140A and organic semiconductor film 140B
The light emitting element 140 is configured by. Finally, the fifth
As shown in FIG. 3D, the reflective electrode 154 is formed on the entire surface of the display substrate 121 or in a stripe shape.

As described above, in the present embodiment, the signal line 132, the common wiring 133, and the like are formed so as to surround the treatment position where the light emitting element 140 is arranged from four sides, and these wirings are normally formed. Since the step 111 is formed to be thicker than that, and the liquid precursor 114A and the liquid organic fluorescent material 114B are selectively applied, there is an advantage that the patterning accuracy of the light emitting element 140 is high. .

When the step 111 is formed, the reflective electrode 154 is formed on a surface having relatively large unevenness. However, if the reflective electrode 154 is made thick to some extent, problems such as disconnection may occur. The probability of occurrence is extremely small.

Moreover, since the step 111 is formed by using the wirings such as the signal line 132 and the common wiring 133, the number of new steps is not particularly increased, so that the manufacturing process may be considerably complicated. Absent.

In order to more reliably prevent the liquid precursor 114A and the liquid organic fluorescent material 114B from flowing out from the inside of the step 111, the liquid precursor 114A and the liquid organic fluorescent material 114B. Coating thickness da
And the height dr of the step 111, it is desirable that the relationship da <dr (1) is established.

However, when the liquid organic fluorescent material 114B is applied, since the hole injection layer 140A is already formed, the height dr of the step 111 is from the initial height to the hole injection layer 140A. It is necessary to deduct the amount of.

Further, while satisfying the above expression (1),
Further, the driving voltage V applied to the organic semiconductor film 140B
d, the sum of the coating thicknesses of the liquid organic fluorescent material 114B d
Between b and the concentration r of the liquid organic fluorescent material 114B and the minimum electric field intensity (threshold electric field intensity) Et at which the organic semiconductor film 140B shows a change in optical characteristics, Vd / (db.r)> Et ... When the relationship (2) is established, the relationship between the coating thickness and the driving voltage is clarified, and the electro-optical effect of the organic semiconductor film 140B is compensated.

On the other hand, in order to secure the flatness between the step 111 and the light emitting element 140, to make the change of the optical characteristics of the organic semiconductor film 140B uniform and to prevent the short circuit, at the time of completion of the light emitting element 140, Thickness df and height of step 111 dr
The relation df = dr (3) should be established between and.

Furthermore, if the above expression (3) is satisfied and the following expression (4) is also satisfied, the relationship between the thickness of the light emitting device 140 at the time of completion and the driving voltage is clarified, and the electrical conductivity of the organic fluorescent material is improved. It is compensated for the optical effect to appear.

Vd / df> Et (4) However, df in this case is not the entire light emitting element 140, but the thickness of the organic semiconductor film 140B at the time of completion.

The optical material forming the upper layer portion of the light emitting element 140 is not limited to the organic fluorescent material 114B, but may be an inorganic fluorescent material.

Further, it is desirable that each of the transistors 142 and 143 as a switching element is formed of polycrystalline silicon formed by a low temperature process of 600 ° C. or lower, which results in cost reduction and high cost due to use of a glass substrate. Higher performance due to mobility can be achieved at the same time. The switching element may be formed of amorphous silicon or polycrystalline silicon formed by a high temperature process of 600 ° C. or higher.

Then, the switching thin film transistor 1
42 and the current thin film transistor 143 may be provided with a transistor, or may be driven by one transistor.

Further, the step 111 may be formed by the first bus wiring of the passive matrix type display element, the scanning line 131 of the active matrix type display element, and the light shielding layer.

Although the luminous efficiency (hole injection rate) of the light emitting element 140 is slightly lowered, the hole injection layer 14
0A may be omitted. Further, instead of the hole injection layer 140A, an electron injection layer is used as the organic semiconductor film 140B and the reflective electrode 15.
4 may be formed between them, or both the hole injection layer and the electron injection layer may be formed.

Further, in the above embodiment, the case where the entire light emitting elements 140 are selectively arranged has been described, especially in consideration of color display. For example, in the case of the display device 1 for single color display, FIG. As shown in, the organic semiconductor film 140B may be uniformly formed on the entire surface of the display substrate 121. However, even in this case, since the hole injection layer 140A must be selectively arranged at each predetermined position in order to prevent crosstalk, coating using the step 111 is extremely effective.

(2) Second Embodiment FIG. 7 shows the second embodiment of the present invention.
In this embodiment, the matrix type display device and the manufacturing method thereof according to the present invention are applied to a passive matrix type display device using an EL display device.

FIG. 7A is a plan view showing the positional relationship between the plurality of first bus wirings 300 and the plurality of second bus wirings 310 arranged in the direction orthogonal to the first bus wirings 300. FIG. 7 (b) is a sectional view taken along line BB of FIG. 7 (a). The same components as those in the first embodiment are designated by the same reference numerals, and the duplicate description thereof will be omitted. Further, since the fine manufacturing process and the like are the same as those in the first embodiment, their illustration and description will be omitted.

That is, in the present embodiment, the insulating film 320 of, eg, SiO _{2 is provided} so as to surround the predetermined position where the light emitting element 140 is arranged. A step 111 is formed between itself and the surroundings.

Even with such a structure, when the liquid precursor 114A and the liquid organic fluorescent material 114B are selectively applied, they flow out to the surroundings, as in the first embodiment. Can be prevented and high-precision patterning can be performed.

(3) Third Embodiment FIG. 8 is a diagram showing a third embodiment of the present invention.
Also in this embodiment, as in the case of the first embodiment, the matrix type display device according to the present invention and the method for manufacturing the same are
This is applied to an active matrix type display device using an EL display element. More specifically, the pixel electrode 1
By forming the step 111 using 41, it is possible to perform highly accurate patterning. The same components as those in the above embodiment are designated by the same reference numerals. Further, FIG. 8 is a cross-sectional view showing the middle of the manufacturing process, and the front and rear thereof are substantially the same as those of the first embodiment, and therefore the illustration and description thereof will be omitted.

That is, in this embodiment, the pixel electrode 141
Is formed thicker than usual, whereby a step 111 is formed between it and its surroundings. That is, in this embodiment, a convex step is formed in which the pixel electrode 141 to which the optical material is applied later is higher than its surroundings.

Then, as in the first embodiment,
By an inkjet head method, a liquid (solution-like) optical material (precursor) 114A for forming a hole injection layer corresponding to a lower portion of the light emitting element 140 is discharged and applied onto the upper surface of the pixel electrode 141. .

However, unlike the case of the first embodiment, the display substrate 121 is turned upside down, that is, the upper surface of the pixel electrode 141 to which the liquid precursor 114A is applied is directed downward. The liquid precursor 114A is applied.

Then, the liquid precursor 114A accumulates on the upper surface of the pixel electrode 141 due to gravity and surface tension, and does not spread around it. Therefore, by heating or irradiating light to solidify the same, a thin hole injection layer similar to that shown in FIG. 4B can be formed, and by repeating this, the hole injection layer is formed. An organic semiconductor film is also formed by the same method.

As described above, in this embodiment, it is possible to improve the patterning accuracy of the light emitting element by applying the liquid optical material by utilizing the convex step 111.

The amount of the liquid optical material accumulated on the upper surface of the pixel electrode 141 may be adjusted by utilizing the inertial force such as the centrifugal force.

(4) Fourth Embodiment FIG. 9 is a diagram showing a fourth embodiment of the present invention.
Also in this embodiment, as in the case of the first embodiment, the matrix type display device according to the present invention and the method for manufacturing the same are
This is applied to an active matrix type display device using an EL display element. The same components as those in the above embodiment are designated by the same reference numerals. FIG. 9 is a cross-sectional view showing the middle of the manufacturing process.
Since it is substantially the same as the embodiment described above, its illustration and description are omitted.

That is, in the present embodiment, first, the reflective electrode 154 is formed on the display substrate 121, and then the insulating film is formed on the reflective electrode 154 so as to surround a predetermined position where the light emitting element 140 will be disposed later. 320 is formed, thereby forming a concave step 111 whose predetermined position is lower than its surroundings.

Then, as in the first embodiment,
A light emitting element 140 is formed by selectively applying a liquid optical material in an area surrounded by the step 111 by an inkjet method.

On the other hand, the peeling layer 15 is formed on the peeling substrate 122.
2 via the scanning line 131, the signal line 132, the pixel electrode 1
41, the switching thin film transistor 142, the current thin film transistor 143, and the insulating film 240 are formed.

Finally, the structure peeled from the peeling layer 122 on the peeling substrate 122 is transferred onto the display substrate 121.

As described above, also in this embodiment, since the liquid optical material is applied by utilizing the step 111, highly accurate patterning can be performed.

Further, in the present embodiment, the light emitting element 14
Damage to the underlying material such as 0 due to the subsequent process, or the scanning line 131, the signal line 132, the pixel electrode 14
1, it is possible to reduce damage to the switching thin film transistor 142, the current thin film transistor 143, or the insulating film 240 due to application of an optical material or the like.

In this embodiment, an active matrix type display element has been described, but a passive matrix type display element may be used.

(5) Fifth Embodiment FIG. 10 is a diagram showing a sixth embodiment of the present invention, and this embodiment is similar to the first embodiment described above. The matrix type display element and the manufacturing method thereof according to the present invention are applied to an active matrix type display device using an EL display element. The same components as those in the above embodiment are designated by the same reference numerals. Also, the first
FIG. 0 is a cross-sectional view showing the middle of the manufacturing process, and the front and rear thereof are substantially the same as those of the first embodiment, and therefore the illustration and description thereof will be omitted.

That is, in the present embodiment, the interlayer insulating film 24
0 is used to form the concave step 111, so that the same effect as that of the first embodiment can be obtained.

Further, the step 1 is formed by utilizing the interlayer insulating film 240.
Since 11 is formed, there is no particular increase in new steps, so that the manufacturing process is not significantly complicated.

(6) Sixth Embodiment FIG. 11 is a diagram showing a sixth embodiment of the present invention, and this embodiment is similar to the first embodiment described above. The matrix type display element and the manufacturing method thereof according to the present invention are applied to an active matrix type display device using an EL display element. The same components as those in the above embodiment are designated by the same reference numerals. Also, the first
FIG. 1 is a cross-sectional view showing the middle of the manufacturing process, and the front and rear thereof are substantially the same as those in the first embodiment, and therefore the illustration and description thereof will be omitted.

That is, in the present embodiment, the patterning accuracy is not improved by utilizing the steps, but the hydrophilicity at a predetermined position to which the liquid optical material is applied is set to be relatively higher than that of the surrounding area. By making it strong, the applied liquid optical material is prevented from spreading to the surroundings.

Specifically, as shown in FIG. 11, after forming the interlayer insulating film 240, the amorphous silicon layer 155 is formed on the upper surface thereof. Amorphous silicon layer 155
Has a relatively higher water repellency than the ITO forming the pixel electrode 141, and therefore the distribution of the water repellency / hydrophilicity in which the hydrophilicity of the surface of the pixel electrode 141 is relatively stronger than the hydrophilicity of the surrounding area is present. It is formed.

Then, as in the first embodiment,
A light emitting element 140 is formed by selectively applying a liquid optical material toward the upper surface of the pixel electrode 141 by an inkjet method, and finally a reflective electrode is formed.

As described above, even in this embodiment, since the liquid optical material is applied after the desired water-repellent / lyophilic distribution is formed, the patterning accuracy is improved. be able to.

It goes without saying that the present embodiment can also be applied to a passive matrix type display element.

Also, a peeling layer 152 is formed on the peeling substrate 121.
The structure may be transferred to the display substrate 121 via the process.

Furthermore, in the present embodiment, the desired water-repellent / hydrophilic distribution is formed by the amorphous silicon layer 155. However, the water-repellent / hydrophilic distribution is determined by the metal or the anodic oxide film. An insulating film such as polyimide or silicon oxide,
It may be formed of another material. Note that the passive matrix display element may be formed using the first bus wiring, and the active matrix display element may be formed using the scan line 131, the signal line 132, the pixel electrode 141, the insulating film 240, or the light shielding layer. Further, although the present embodiment has been described on the assumption that the liquid optical material is an aqueous solution,
A liquid optical material using a solution of another liquid may be used, and in that case, the liquid repellency and lyophilicity of the solution may be obtained.

(7) Seventh Embodiment The seventh embodiment of the present invention has the same sectional structure as that of FIG. 10 used in the fifth embodiment, and therefore will be described with reference to FIG. To do.

That is, in this embodiment, the interlayer insulating film 24
0 is formed of SiO ₂ , its surface is irradiated with ultraviolet rays, and thereafter, the surface of the pixel electrode 141 is exposed, and a liquid optical material is selectively applied.

With such a manufacturing process, the step 111
Not only is formed, but also a strong liquid-repellent distribution is formed along the surface of the interlayer insulating film 240, so that the applied liquid optical material has a difference in level between the step 111 and the liquid-repellent property of the interlayer insulating film 240. Both actions make it easy to accumulate at a predetermined position. That is, since the effects of both the fifth embodiment and the sixth embodiment are exhibited, it is possible to further improve the patterning accuracy of the light emitting element 140.

The timing of irradiating the ultraviolet rays may be before or after exposing the surface of the pixel electrode 141,
It may be appropriately selected depending on the material forming the interlayer insulating film 240, the material forming the pixel electrode 141, and the like. By the way, when ultraviolet rays are irradiated before the surface of the pixel electrode 141 is exposed, the inner wall surface of the step 111 does not have strong liquid repellency. Therefore, it is necessary to store the liquid optical material in the area surrounded by the step 111. It is advantageous. On the contrary, when the ultraviolet rays are irradiated after the surface of the pixel electrode 141 is exposed, it is necessary to vertically irradiate the ultraviolet rays so that the liquid repellency of the inner wall surface of the step 111 is not increased. Since ultraviolet rays are irradiated after the etching step for exposing the surface of the electrode 141, there is an advantage that there is no concern that the liquid repellency is weakened by the etching step.

Further, as the material for forming the interlayer insulating film 240, for example, photoresist or polyimide may be used, which has an advantage that the film can be formed by spin coating.

Depending on the material forming the inter-layer insulation film 240, it is not irradiated with ultraviolet rays, but for example O
_The liquid repellency may be enhanced by irradiating plasma such as ₂ , CF ₃ , or Ar.

(8) Eighth Embodiment FIG. 12 is a diagram showing an eighth embodiment of the present invention, and this embodiment is the same as the first embodiment. The matrix type display element and the manufacturing method thereof according to the present invention are applied to an active matrix type display device using an EL display element. The same components as those in the above embodiment are designated by the same reference numerals. Also, the first
FIG. 2 is a cross-sectional view showing the middle of the manufacturing process, and the front and rear thereof are substantially the same as those of the first embodiment, and therefore the illustration and description thereof will be omitted.

That is, in the present embodiment, the level difference and the liquid repellency
Instead of improving the patterning accuracy by utilizing the lyophilic distribution, the patterning accuracy is improved by utilizing the attractive force and repulsive force by the electric potential.

That is, as shown in FIG. 12, the signal line 1
By driving the transistor 32 and the common power supply line 133 and appropriately turning on / off a transistor (not shown), a potential distribution is formed in which the pixel electrode 141 has a negative potential and the interlayer insulating film 240 has a positive potential. Then, a positively charged liquid optical material 114 is selectively applied to a predetermined position by an inkjet method.

As described above, according to this embodiment, a desired potential distribution is formed on the display substrate 121, and the attractive force and repulsive force between the potential distribution and the positively charged liquid optical material 114 are applied. Since the liquid optical material is selectively applied by utilizing it, the accuracy of patterning can be improved.

In particular, since the liquid optical material 114 is charged in this embodiment, the effect of improving the patterning accuracy is further enhanced by utilizing not only the spontaneous polarization but also the charged electric charge.

In this embodiment, the case where the present invention is applied to the active matrix type display element is shown, but it is also applicable to the passive matrix type display element.

A peeling layer 152 is formed on the peeling substrate 121.
The structure may be transferred to the display substrate 121 via the process.

Further, in the present embodiment, the desired potential distribution is that the potential is sequentially applied to the scanning line 131 and at the same time the signal line 1 is applied.
32 and the common line 133 are applied with a potential, and the pixel electrode 14
1 is formed by applying a potential to the No. 1 via the switching thin film transistor 142 and the current thin film transistor 143.

The potential distribution is set to the scanning line 131, the signal line 132,
By forming the common line 133 and the pixel electrode 141, an increase in the number of steps can be suppressed. In the case of a passive matrix display element, the potential distribution can be formed by the first bus wiring and the light shielding layer.

Further, in the present embodiment, the pixel electrode 14
1 and the surrounding interlayer insulating film 240 are applied with a potential, but the present invention is not limited to this, and for example, as shown in FIG. A positive potential may be applied only to the insulating film 240, and the liquid optical material 114 may be positively charged and then applied. By doing so, the liquid optical material 114 can be surely maintained in a positively charged state even after being applied, so that the liquid optical material 114 is surrounded by the repulsive force between the liquid optical material 114 and the surrounding interlayer insulating film 240. It becomes possible to more reliably prevent the liquid from flowing out.

Unlike the ones described in the above embodiments, the step 111 may be formed by applying a liquid material, or the step 111 may be formed.
May be formed by forming a material on the peeling substrate via a peeling layer and transferring the structure peeled from the peeling layer on the peeling substrate onto the display substrate.

Further, in each of the above-mentioned embodiments, it has been described that an organic or inorganic EL can be applied as the optical material, but the present invention is not limited to this, and the optical material may be liquid crystal. INDUSTRIAL APPLICABILITY As described above, according to the present invention, a liquid optical material is applied using a step, a desired liquid-repellent / lyophilic distribution, a desired potential distribution, or the like. Therefore, there is an effect that the patterning accuracy of the optical material can be improved.

[Brief description of drawings]

FIG. 1 is a circuit diagram showing a part of a display device according to a first embodiment of the present invention.

FIG. 2 is an enlarged plan view showing a planar structure of a pixel region.

FIG. 3 is a cross-sectional view showing a flow of manufacturing process in the first embodiment.

FIG. 4 is a cross-sectional view showing a flow of manufacturing process in the first embodiment.

FIG. 5 is a cross-sectional view showing the flow of manufacturing steps in the first embodiment.

FIG. 6 is a cross-sectional view showing a modified example of the first embodiment.

FIG. 7 is a plan view and a cross-sectional view showing a second embodiment.

FIG. 8 is a cross-sectional view showing a part of the manufacturing process of the third embodiment.

FIG. 9 is a cross-sectional view showing a part of the manufacturing process of the fourth embodiment.

FIG. 10 is a cross-sectional view showing a part of the manufacturing process of the fifth embodiment.

FIG. 11 is a cross-sectional view showing a part of the manufacturing process of the sixth embodiment.

FIG. 12 is a cross-sectional view showing a part of the manufacturing process of the eighth embodiment.

FIG. 13 is a cross-sectional view showing a modified example of the eighth embodiment.

Claims (9)

[Claims] 1. A method of manufacturing a display device in which a light emitting material or a hole injection layer is arranged at a predetermined position, which includes a step of forming a step at a boundary between the predetermined position and the periphery of the predetermined position. A method for manufacturing a display element, comprising: 2. The method of manufacturing a display element according to claim 1, wherein the step is formed so that the predetermined position is lower than the periphery of the predetermined position. 3. The method for manufacturing a display element according to claim 1, wherein the light emitting material or the hole injection layer is arranged corresponding to the predetermined position by applying a liquid material. A method for manufacturing a display device having a feature. 4. The method of manufacturing a display element according to claim 3, wherein the liquid material is applied by an inkjet method. 5. The method of manufacturing a display element according to claim 1, further comprising a step of forming a data line, a step of forming a signal line, and a switching element corresponding to the predetermined position. And a step of forming the display element. 6. The method for manufacturing a display element according to claim 1, further comprising a step of improving lyophilicity with respect to the liquid material at the predetermined position as compared with the vicinity of the predetermined position. And a method for manufacturing a display element. 7. The method of manufacturing a display element according to claim 6, wherein before applying the liquid material, lyophilicity with respect to the liquid material at the predetermined position is provided around the predetermined position by using plasma irradiation. A method of manufacturing a display element, which is characterized by improving the characteristics. 8. The method of manufacturing a display element according to claim 7, wherein the plasma irradiation is performed by using one gas selected from O ₂ , CF ₄ , and Ar as a plasma raw material. Display element manufacturing method. 9. The method for manufacturing a display element according to claim 8, wherein the plasma irradiation is performed using a mixed gas of at least two gases selected from O ₂ , CF ₄ , and Ar. A method for manufacturing a display device having a feature.