KR100524285B1 - Matrix type light emitting device - Google Patents

Abstract

In the matrix display device and its manufacturing method, the object is to improve the precision of patterning while maintaining the characteristics such as low cost, high throughput, and high degree of freedom of optical materials.

In order to achieve this object, the first bus wiring or the active matrix display device is used if the passive matrix display device uses a step difference, a desired liquid repellency, a lyophilic distribution, a desired potential distribution, or the like on the display substrate. It is formed using a scanning line, a signal line, a common supply wire, a pixel electrode, an interlayer insulating film, a light shielding layer, and the like, and selectively uses a liquid optical material at a predetermined position.

Description

Matrix type light emitting device

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a matrix type light emitting device, and in particular, an optical material such as a fluorescent material (light emitting material) or a light modulation material is selectively disposed at a predetermined position on a display substrate. I) In the EL device, the manufacturing method of the EL device, the matrix type EL device, and the manufacturing method of the matrix type EL device, the optical material can be disposed accurately at a predetermined position.

Matrix display elements such as LCD (Liquid Crystal Display) and EL (Electroluminescense) display elements are used in many types as display elements that realize lightweight, thin, high image quality and high definition. The matrix display element is composed of a matrix bus wiring, an optical material (light emitting material or light modulating material), and other structures as necessary.

Here, in the case of a monochromatic matrix display element, the wirings and the electrodes need to be arranged in a matrix form on the display substrate, but the optical material can be applied to the entire surface of the display substrate in the same manner.

On the other hand, in the case of implementing a so-called color matrix display element with an EL display element having a form of self-emission, for example, three pixel electrodes are arranged for each pixel corresponding to three primary colors of light such as RGB, and each pixel For each electrode, an optical material corresponding to any one of RGB must be applied. For example, it is necessary to selectively arrange the optical material at a predetermined position.

Therefore, although development of the method of patterning an optical material is required, etching and application | coating are mentioned as a candidate of an effective patterning method.

The process in the case of etching is as follows.

First, an optical material layer is formed on the entire surface of the display substrate. Next, a resist film is formed on the layer of the optical material, and the resist film is exposed through a mask and then patterned. Then, etching is performed to pattern the optical material layer in accordance with the pattern of the resist.

In this case, however, the number of processes is high, and each material and apparatus are expensive, so the cost is high. In addition, the throughput is large because the number of steps is large and each step is complicated. In addition, depending on the chemical properties of the optical material, resistance to resists and etching liquids is low, and these processes may not be possible.

In addition, the process at the time of application | coating is as follows.

First, the optical material is dissolved in a solvent to form a liquid, and the liquid optical material is selectively applied to a predetermined position on the display substrate by an inkjet method or the like. And if necessary, the optical material is solidified by heating or light irradiation. In this case, since there are few processes and each material and apparatus are inexpensive, cost becomes inexpensive. In addition, the number of steps is small, and the throughput is good because each step is simplified. In addition, regardless of the chemical properties of the optical material, as long as liquefaction is possible, these processes are possible.

The method of patterning by application | coating as mentioned above can be considered as easily implementable at first glance. However, the inventors have conducted experiments and the like. When the optical material is applied by the inkjet method, the optical material must be diluted several tens or more times with a solvent. Therefore, the fluidity is high, and the solidification thereof after application is performed. It turned out that it is difficult to hold | maintain in application | coating position until completion.

That is, due to the fluidity of the liquid optical material, the accuracy of patterning is deteriorated. For example, an optical material applied to a certain pixel flows out to an adjacent pixel, thereby deteriorating an optical characteristic of the pixel. In addition, nonuniformity occurs in the coating area for each pixel, resulting in nonuniformity in the coating thickness, and nonuniformity in the optical properties of the optical material.

This problem is remarkable in light emitting materials for EL display elements that are liquid at the time of application and subsequently solidified, but are similarly a problem that occur when a liquid crystal is applied selectively on the display substrate when and after application.

SUMMARY OF THE INVENTION The present invention has been made in view of the unsolved problems of the prior art, and it is possible to reliably arrange liquid optical materials at a predetermined position while maintaining the characteristics such as low cost, high throughput, and high degree of freedom of optical materials. An object of the present invention is to provide an EL device, a method of manufacturing the EL device, a matrix EL device, and a method of manufacturing the matrix EL device.

In order to achieve the above object, the invention according to the first aspect of the present invention has a configuration in which an optical material is selectively disposed at a predetermined position on a display substrate, wherein the optical material is in a liquid matrix form when applied at least in the predetermined position. In the display element, it has a step for selectively applying the optical material at the boundary between the predetermined position and the periphery thereof.

According to the invention according to the first aspect, since the above-described steps are provided, it is possible to selectively arrange the optical material at a predetermined position even when the optical material is liquid at the time of coating. For example, the matrix display element according to the first aspect of the present invention is a high performance matrix display element in which optical materials are precisely disposed at predetermined positions.

In order to achieve the above object, the invention according to the second aspect of the present invention has a configuration in which an optical material is selectively disposed at a predetermined position on a display substrate, wherein the optical material is in a liquid matrix form when applied at least in the predetermined position. A method of manufacturing a display element, comprising: forming a step for applying the liquid optical material at a boundary between the predetermined position and the periphery of the display substrate; The process of apply | coating an optical material was provided.

According to the invention according to the second aspect, since the step is formed before the liquid optical material is applied, the step of preventing expansion of the liquid optical material applied at a predetermined position around the display can be prevented by the step. As a result, it becomes possible to improve the precision of patterning, while maintaining the characteristics, such as low cost, high throughput, and the high degree of freedom of an optical material.

In the manufacturing method of the matrix type display element which is the invention which concerns on the 3rd aspect of this invention, the said step is a recessed step | step with which the said predetermined position side is lower than the circumference, The said display The liquid optical material was applied to the predetermined position with the surface on which the liquid optical material of the substrate is applied upward.

According to the invention according to the third aspect, when the surface on which the optical material of the display substrate is applied is faced upward, the recess formed by the step is also upward. When the liquid optical material is applied inside the concave portion, the optical material is accumulated in the concave portion by gravity, so that the applied liquid optical material is formed in the concave portion by gravity or surface tension or the like unless it is extremely large. Since it can be solid, even if it dries, for example, and solidifies an optical material, it does not have a problem and patterning with high precision can be performed.

On the other hand, in the manufacturing method of the matrix type display element which is the invention which concerns on the 4th aspect of this invention which is the invention which concerns on the said 2nd aspect, The said step is a convex shape in which the said predetermined position becomes higher than the circumference | surroundings. ), And the liquid optical material is applied to the predetermined position with the surface on which the liquid optical material of the display substrate is applied face down.

According to the invention according to the fourth aspect, when the surface on which the optical material of the display substrate is applied is faced downward, the convex portion formed by the step is also downward. When the liquid optical material is applied to the convex portion, the optical material is collected on the convex portion by the surface tension, and the applied liquid optical material is formed on the convex portion by the surface tension unless it is extremely large. Since it can accumulate, even if it drys in this state and solidifies an optical material, for example, it can be performed and patterning with high precision can be performed.

In order to achieve the above object, the invention according to the fifth aspect of the present invention has a configuration in which an optical material is selectively disposed at a predetermined position on a display substrate, wherein the optical material is in a liquid matrix form when applied to at least the predetermined position. A method of manufacturing a display element, comprising: forming a plurality of first bus wirings on the display substrate, and forming a step for applying the liquid optical material at the predetermined position on the display substrate and the boundary portion around the display substrate And a step of applying the liquid optical material at the predetermined position by using the step, and forming a plurality of second bus wires crossing the first bus wire so as to cover the optical material. It was.

According to the invention according to the fifth aspect, in the so-called passive matrix display device manufacturing method, the same effects as those of the invention according to the second aspect can be obtained.

In order to achieve the above object, the invention according to the sixth aspect of the present invention has a configuration in which an optical material is selectively disposed at a predetermined position on a display substrate, wherein the optical material is in a liquid matrix form when applied to at least the predetermined position. A method of manufacturing a display element, comprising: forming a plurality of first bus wirings on the display substrate, and applying a step for applying the liquid optical material to a boundary between the predetermined position and the periphery of the display substrate. A process of forming, a process of applying said liquid optical material at said predetermined position using said step, a process of forming a plurality of second bus wiring on a substrate for peeling through a peeling layer, and said optical material Even if the first bus wiring and the second bus wiring cross a structure separated from the peeling layer on the peeling substrate on the coated display substrate. It was provided with the step of transferring.

According to the sixth aspect of the invention, in the method of manufacturing a so-called passive matrix display element, the same effects as those of the invention according to the second aspect can be exhibited, and after the optical material is disposed, Since the process of forming the 2 bus wiring layer and etching this is not performed, it becomes possible to reduce the damage by the subsequent process to base materials, such as an optical material.

In order to achieve the above object, the invention according to the seventh aspect of the present invention has a configuration in which an optical material is selectively disposed at a predetermined position on a display substrate, and the optical material is in a liquid matrix form when applied at least in the predetermined position. A method for manufacturing a display element, comprising: a wiring including a plurality of scanning lines and signal lines on the display substrate, a pixel electrode corresponding to the predetermined position, and a switching for controlling the state of the pixel electrode in accordance with a state of the wiring Forming a device, forming a step for applying the liquid optical material at a boundary between the predetermined position on the display substrate and a peripheral portion thereof, and using the step for the liquid optical The process of apply | coating a material was provided.

According to the invention according to the seventh aspect, in the method for manufacturing an active matrix display element, the same effects as those of the invention according to the second aspect can be obtained.

In order to achieve the above object, the invention according to the eighth aspect of the present invention has a configuration in which an optical material is selectively disposed at a predetermined position on a display substrate, wherein the optical material is a liquid matrix type at least when applied to the predetermined position. A method of manufacturing a display element, comprising: forming a step for applying the liquid optical material at a boundary between the predetermined position and the periphery of the display substrate; A process of applying an optical material, a wiring including a plurality of scanning lines and signal lines on the substrate for peeling through a peeling layer, a pixel electrode corresponding to the predetermined position, and a state of the pixel electrode according to the state of the wiring A step of forming a switching element for controlling and the peeling on the peeling substrate on the display substrate coated with the optical material The process of transferring the structure peeled from the layer was provided.

According to the invention according to the eighth aspect, in the method of manufacturing the active matrix display element, the same effect as that of the invention according to the second aspect can be exhibited, and after the optical material is disposed, the wiring layer is placed on the upper surface. The damage of the subsequent process to the base material such as the optical material or the application of the optical material to the scanning line, the signal line, the pixel electrode, the switching element, or the like is not performed so that the process of forming the pixel electrode layer and etching them is not performed. It is possible to reduce damage caused by the back.

According to a ninth aspect of the present invention, in the method for manufacturing a matrix display device according to the fifth or sixth aspect, the step is formed by using the first bus wiring, and the predetermined position side This liquid is a concave step that is lower than its periphery, and in the step of applying the liquid optical material, the liquid optical material is placed at the predetermined position with the surface on which the liquid optical material of the display substrate is to be applied upward facing upward. It is to apply.

According to the invention according to the ninth aspect, in the method of manufacturing a so-called passive matrix display element, the same effects as those of the invention according to the third aspect can be obtained, and a step is formed by using the first bus wiring. As a result, part or all of the steps for forming the first bus wirings also serve as steps for forming steps, so that an increase in the steps can be suppressed.

In the manufacturing method of the matrix type display element which is the invention which concerns on the 10th aspect of this invention, the said step is formed using the said wiring, The said predetermined position is lower than the circumference | surroundings. In the step of applying the liquid optical material in the concave step, the liquid optical material is applied to the predetermined position with the surface on which the liquid optical material of the display substrate is applied upward.

According to the invention according to the tenth aspect, in the method of manufacturing the active matrix display element, the same effects as those of the invention according to the third aspect can be exhibited, and as a result of forming a step using wiring, wiring Since part or all of the step of forming the step also serves as a step of forming a step, an increase in the step can be suppressed.

According to an eleventh aspect of the present invention, in the method for manufacturing a matrix display device according to the seventh aspect, the step is formed by using the pixel electrode, and the predetermined position is higher than its surroundings. In the step of applying the liquid optical material, the liquid optical material is applied to the predetermined position with the surface on which the liquid optical material of the display substrate is applied downward.

According to the eleventh aspect of the present invention, in the method of manufacturing an active matrix display element, the same effects as those of the fourth aspect of the present invention can be achieved, and a step is formed using a pixel electrode. Since part or all of the process of forming an electrode also serves as a step of forming a step, an increase in the process can be suppressed.

In accordance with a twelfth aspect of the present invention, there is provided a method of manufacturing a matrix display device according to the fifth to eighth aspects, the method including forming an interlayer insulating film, wherein the step is performed using the interlayer insulating film. And a predetermined step is formed in a concave step that is lower than its periphery, and in the step of applying the liquid optical material, the surface where the liquid optical material of the display substrate is applied is upward, the predetermined position. The liquid optical material is coated on the substrate.

According to the invention according to the twelfth aspect, in the so-called manufacturing method of the passive matrix display element and the so-called active matrix display element manufacturing method, the same effects as those of the invention according to claim 3 can be obtained, and the interlayer As a result of forming the step using the insulating film, part or all of the step of forming the interlayer insulating film also serves as the step of forming the step, so that the increase in the step can be suppressed.

According to a thirteenth aspect of the present invention, there is provided a method of manufacturing a matrix display device according to the fifth to eighth aspects, the method comprising: forming a light shielding layer, wherein the step is performed using the light shielding layer. And a predetermined step is formed in a concave step whose lower side is lower than its periphery, and in the step of applying the liquid optical material, the surface on which the liquid optical material of the display substrate is coated is turned upward. The liquid optical material is applied at the position.

According to the invention according to the thirteenth aspect, in the manufacturing method of the passive matrix display element and the so-called active matrix display element manufacturing method, the same effects as those of the invention according to the third aspect can be exhibited, and the light shielding layer As a result of forming the step using the step, since part or all of the step of forming the light shielding layer also serves as the step of forming the step, an increase in the step can be suppressed.

According to a fourteenth aspect of the present invention, in the method for manufacturing a matrix display device according to the second, third, and fifth to eighth aspects, the step of forming the step includes forming a liquid material. Steps are formed by selectively removing this after coating. As a liquid material, a resist or the like can be applied. When a resist is applied, a resist film having a suitable thickness is formed by spin coating the resist over the entire display substrate, and the resist film is exposed and etched to form a recess corresponding to a predetermined position. As a result, a step can be formed.

According to the invention according to the fourteenth aspect, in addition to the effects of the invention according to the second, third, and fifth to eighth aspects, the step of forming a step can be simplified, and the basis It is possible to easily form a step with a large height difference while reducing damage to the material.

According to a fifteenth aspect of the present invention, in the method of manufacturing a matrix display device according to the second, third, fifth, and seventh aspect, the step of forming the step is performed on a peeling substrate. A step is formed through the release layer on the substrate, and the structure separated from the release layer on the release substrate is transferred onto the display substrate.

According to the invention according to the fifteenth aspect, in addition to the effects of the invention according to the second, third, fifth, and seventh aspects, the step formed separately on the release substrate is transferred. In addition to simplifying the step forming step, it is possible to easily form a step with a large height difference while reducing damage to the base material.

According to a sixteenth aspect of the present invention, in the method of manufacturing a matrix display device according to the second, third, fifth to eighth, and tenth aspects, the height of the step is d _r ) Was to satisfy the following equation (1).

d _a <d _r

However, d _a is the coating thickness per stroke of the liquid optical material.

According to the invention according to the sixteenth aspect described above, it is possible to suppress the outflow of the optical material around the predetermined position by exceeding the concave step, even without resorting to the surface tension of the liquid optical material.

According to a seventeenth aspect of the present invention, in the method of manufacturing a matrix display device according to the sixteenth aspect, the following expression (2) is satisfied.

V _d / (d _b .r)> E _t

Where V _d is the driving voltage applied to the optical material, d _b is the sum of the respective coating thicknesses of the liquid optical material, r is the concentration of the liquid optical material, and E _t is the change in the optical properties of the optical material. The minimum field strength that appears (critical field strength).

According to the invention according to the seventeenth aspect, in addition to the effect of the invention according to the sixteenth aspect, the relationship between the coating thickness and the driving voltage is made clear, and the expression of the optical effect of the optical material is compensated.

According to an eighteenth aspect of the present invention, in the method of manufacturing a matrix display device according to the second, third, fifth to eighth, and tenth aspects, the height of the step d _r ) Was to satisfy the following equation (3).

d _f = d _r

However, d _f is the thickness at the completion of the optical material.

According to the invention according to the eighteenth aspect, the leveling and flatness of the optical material at the time of completion are ensured, and the uniformity of the optical property change of the optical material and the prevention of short circuit can be prevented.

In the invention according to the nineteenth aspect of the present invention, in the method of manufacturing a matrix display device according to the eighteenth aspect, the thickness d _f at the completion of the invention satisfies the following expression (4).

V _d / d _f > E _t

However, V _d is a driving voltage applied to the optical material, and E _t is the minimum field strength (critical field strength) at which the optical characteristic change of the optical material is exhibited.

According to the invention according to the nineteenth aspect, in addition to the operational effects of the invention according to the eighteenth aspect, the relationship between the coating thickness and the driving voltage is clarified to compensate for the expression of the optical effect of the optical material.

In order to achieve the above object, the invention according to the twentieth aspect of the present invention has a configuration in which an optical material is selectively disposed at a predetermined position on a display substrate, and the optical material is in a liquid matrix form when applied at least in the predetermined position. In the manufacturing method of a display element, it provided with the process of making the lyophilic property of the said predetermined position on the said display substrate relatively stronger than the lipophilic of the surrounding, and the process of apply | coating the said liquid optical material in the said predetermined position.

According to the invention according to the twentieth aspect, since the lyophilic property of the predetermined position is strengthened before the liquid optical material is applied, the liquid optical material applied to the predetermined position is more easily accumulated at the predetermined position than its surroundings. When the difference between the predetermined position and the lyophilic properties around it is sufficiently large, the liquid optical material applied at the predetermined position does not diffuse around the position. As a result, it becomes possible to improve the precision of patterning, while maintaining the characteristics, such as low cost, high throughput, and the high degree of freedom of an optical material.

Moreover, in the process of making the lyophilic of a predetermined position on a display substrate relatively stronger than the lipophilic of the surrounding, it is conceivable to make the lyophilic of a predetermined position strong, the liquid repellency around the predetermined position, or both.

In order to achieve the above object, the invention according to the twenty-first aspect of the present invention has a configuration in which an optical material is selectively disposed at a predetermined position on a display substrate, and the optical material is in a liquid matrix form when applied to at least the predetermined position. A method of manufacturing a display element, comprising the steps of: forming a plurality of first bus wirings on the display substrate; and making the lyophilic property of the predetermined position on the display substrate relatively stronger than the lipophilic properties thereof. And a step of coating the liquid optical material at a predetermined position, and forming a plurality of second bus wirings crossing the first bus wiring so as to cover the optical material.

According to the invention according to the twenty-first aspect, in the method for manufacturing a passive matrix display element, the same effects as those of the invention according to the twentieth aspect can be obtained.

In order to achieve the above object, the invention according to a twenty-second aspect of the present invention has a configuration in which an optical material is selectively disposed at a predetermined position on a display substrate, wherein the optical material is in a liquid matrix form when applied at least in the predetermined position. A method of manufacturing a display element, comprising the steps of: forming a plurality of first bus wirings on the display substrate; and making the lyophilic property of the predetermined position on the display substrate relatively stronger than the lipophilic properties thereof. Coating the liquid optical material at a predetermined position; forming a plurality of second bus wirings on the substrate for peeling through a peeling layer; and forming a substrate on the peeling substrate on the display substrate coated with the optical material. The process of transferring the structure peeled from the said peeling layer so that the said 1st bus wiring and the said 2nd bus wiring may cross | intersect was provided.

According to the invention according to the twenty-second aspect, in the method for manufacturing a passive matrix display element, the same effects as those of the invention according to the twentieth aspect can be exhibited, and after the optical material is disposed, the second surface is placed on the second surface. Since the process of forming a bus wiring layer and etching this is not performed, it becomes possible to reduce the damage by the subsequent process to base materials, such as an optical material.

In order to achieve the above object, the invention according to a twenty-third aspect of the present invention has a configuration in which an optical material is selectively disposed at a predetermined position on a display substrate, and the optical material is in a liquid matrix form when applied at least in the predetermined position. A method for manufacturing a display element, comprising: a wiring including a plurality of scanning lines and signal lines on the display substrate, a pixel electrode corresponding to the predetermined position, and a switching for controlling the state of the pixel electrode in accordance with a state of the wiring A step of forming an element, a step of making the lyophilic property of the predetermined position on the display substrate relatively stronger than the surrounding lipophilic property, and a step of applying the liquid optical material to the predetermined position were provided.

According to the invention of the twenty-third aspect, in the manufacturing method of the so-called active matrix display element, the same effects as those of the invention of the twentieth aspect can be obtained.

In order to achieve the above object, the invention according to a twenty-fourth aspect of the present invention has a configuration in which an optical material is selectively disposed at a predetermined position on a display substrate, wherein the optical material is in a liquid matrix form when applied to at least the predetermined position. A method of manufacturing a display element, comprising: a step of making the lyophilic property of the predetermined position on the display substrate relatively stronger than the lipophilic of the surroundings, a step of applying the liquid optical material to the predetermined position, and a substrate for peeling Forming a wiring including a plurality of scanning lines and signal lines, a pixel electrode corresponding to the predetermined position, and a switching element for controlling the state of the pixel electrode in accordance with the state of the wiring through a release layer on the substrate; And transferring the peeled structure from the peeling layer on the peeling substrate onto the display substrate coated with the optical material. Equipped.

According to the invention according to the twenty-fourth aspect, in the method for manufacturing an active matrix display element, the same effects as those of the invention according to the twentieth aspect can be exhibited, and after the optical material is disposed, the wiring layer is placed on the upper surface. The damage caused by the subsequent process to the base material such as the optical material or the application of the optical material to the scanning line, the signal line, the pixel electrode, the switching element, or the like, is not performed so that the process of forming the pixel electrode layer and etching them is performed. It is possible to reduce damage caused by the back.

According to a twenty-fifth aspect of the present invention, in the method for manufacturing a matrix type display element according to the twenty-first or twenty-second aspect, a liquid-repellent distribution is formed according to the first bus wiring on the display substrate. By doing so, the lyophilic property of the predetermined position on the display substrate is made relatively stronger than the lyophilic properties around it.

According to the invention according to the twenty-fifth aspect, in the method for manufacturing a passive matrix display element, the same effect as that of the invention according to the twentieth aspect can be exhibited, and a distribution having a strong lyophilic property according to the first bus wiring can be obtained. As a result, since a part or all part of the process of forming a 1st bus wiring also serves as a process which makes the lyophilic property of the said predetermined position relatively stronger than the lipophilic surrounding it, the increase of a process can be suppressed.

According to an invention according to a twenty-sixth aspect of the present invention, in the method for manufacturing a matrix display element which is the invention according to the twenty-third aspect, the liquid-repellent property is formed on the display substrate by forming a strong liquid repellency according to the wiring on the display substrate. The lyophilic property of the said predetermined position becomes relatively stronger than the lyophilic of the surrounding.

According to the invention according to the twenty-sixth aspect, in the method for manufacturing an active matrix display element, the same effects as those of the invention according to the twentieth aspect can be exhibited, and a distribution having strong lyophilic properties is formed along the wiring. As a result, part or all of the steps for forming the wirings also serve as a step of making the lyophilic property at the predetermined position relatively stronger than the lipophilic surrounding thereof, so that the increase of the step can be suppressed.

According to a twenty-seventh aspect of the present invention, in the method for manufacturing a matrix type display element according to the twenty-third aspect, the lyophilic properties of the surface of the pixel electrode on the display substrate are strengthened so that the predetermined position on the display substrate is increased. The lyophilic property is relatively stronger than the lipophilic properties around it.

According to the invention of the twenty-seventh aspect, in the method of manufacturing an active matrix display element, the same effect as that of the invention according to the twentieth aspect can be exhibited, and the lyophilic property of the pixel electrode surface is strengthened. Since part or all of the step of forming the dope also serves as a step of making the lyophilic property of the predetermined position relatively stronger than that of the surrounding lipophilic, the increase of the step can be suppressed.

According to a twenty eighth aspect of the present invention, there is provided a method for manufacturing a matrix type display element according to the twenty-first to twenty-fourth aspects, the method comprising: forming an interlayer insulating film, in accordance with the interlayer insulating film on the display substrate. By forming a strong liquid repellency, the lyophilic property of the predetermined position on the display substrate is made relatively stronger than that of the surrounding lyophilic.

According to the invention according to the twenty-eighth aspect, in the so-called manufacturing method of the passive matrix display element and the so-called manufacturing method of the active matrix display element, the same effects as those of the invention according to claim 20 can be obtained, and the interlayer As a result of the formation of a strong lyophilic distribution in accordance with the insulating film, part or all of the steps of forming the interlayer insulating film serve as a step of making the lyophilic property of the predetermined position relatively stronger than the surrounding lyophilic properties, thereby increasing the process. Can be suppressed.

According to a twenty-ninth aspect of the present invention, there is provided a method of manufacturing a matrix type display element according to the twenty-third aspect, the method comprising: forming an interlayer insulating film so that the surface of the pixel electrode is exposed; In this case, a step for applying the liquid optical material is formed at a portion at which the surface of the pixel electrode is exposed and at a boundary portion thereof, and the liquid repellency of the surface of the interlayer insulating film is strengthened, thereby making it possible to set the predetermined height on the display substrate. The lyophilic properties of the position are relatively stronger than the lipophilic properties around it.

According to the invention according to the twenty-ninth aspect, before the liquid optical material is applied, the interlayer insulating film forms a concave step similar to the invention according to the third embodiment, and the liquid repellency of the surface of the interlayer insulating film is formed. By becoming strong, the lyophilic property of a predetermined position becomes relatively stronger than the lipophilic of the surrounding. For this reason, since both the effect | action of the invention which concerns on the said 3rd aspect, and the effect | action of the invention which concerns on the said 20th aspect are exhibited, it can more reliably prevent the liquid optical material apply | coated to a predetermined position to expand around. You can do it. As a result, it is possible to further improve the accuracy of patterning while maintaining the characteristics of low cost, high throughput, and high degree of freedom of optical materials.

According to a thirty-ninth aspect of the present invention, there is provided a method for manufacturing a matrix type display element according to the twenty-first to twenty-fourth aspects, the method comprising: forming a light shielding layer; By forming a strong liquid repellency, the lyophilic property of the predetermined position on the display substrate is relatively stronger than the lyophilic properties around it.

According to the thirtieth aspect of the present invention, in the method of manufacturing the passive matrix display element and the so-called method of manufacturing the active matrix display element, the same effects as those of the invention according to the twentieth aspect can be exhibited. As a result of forming a strong lyophilic distribution, part or all of the steps of forming the light shielding layer serve as a step of making the lyophilic property of the predetermined position relatively stronger than the lyophilic surrounding thereof, thereby suppressing the increase of the process. can do.

The invention according to claim 31 of the present invention, in the manufacturing method of the inventions matrix display device according to the twentieth aspect to the 24th aspect, the 26th aspect, the 27th aspect, the 29th form, or irradiating ultraviolet O ₂ , CF _3, there by irradiating the plasma, such as Ar, is greatly to the difference in the lyophilic property of the predetermined positions and the periphery.

According to the invention according to the thirty first aspect, for example, the liquid repellency of the interlayer insulating film surface and the like can be easily strengthened.

In the manufacturing method of the matrix type display element which is the invention which concerns on the said 2nd-8th, 10th, and 11th aspects which concerns on the 32nd aspect of this invention, the lipophilic property of the said predetermined position on the said display board is circumferentially In addition, the invention of the thirty-third aspect of the present invention provides a matrix type display device according to the twentieth to twenty-fourth, twenty-sixth, and twenty-seventh aspects. In the method, a step of forming a step for applying the liquid optical material at a boundary between the predetermined position and the periphery of the display substrate is provided.

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According to the thirty-second or thirty-third aspect of the present invention, as in the thirty-ninth aspect, before the liquid optical material is applied, a predetermined step is formed and the lyophilic property of the predetermined position is It becomes relatively stronger than the surrounding lyophilic. To this end, since both the action of the invention according to the third aspect and the action of the invention according to the twentieth aspect are exhibited, it is possible to more reliably prevent the liquid optical material applied at a predetermined position from spreading around. There is a number. As a result, it is possible to further improve the accuracy of patterning while maintaining the characteristics of low cost, high throughput, and high degree of freedom of optical materials.

In order to achieve the above object, the invention according to the thirty-fourth aspect has a configuration in which an optical material is selectively disposed at a predetermined position on a display substrate, wherein the optical material is in a liquid state when the optical material is applied at least in the predetermined position. A method of manufacturing a semiconductor device, the method comprising: forming a potential distribution on the display substrate such that the potential is different from the predetermined position, and selectively applying the liquid optical material to the predetermined position by using the potential distribution. Process.

According to the invention according to the thirty-fourth aspect, in order to form a dislocation distribution before applying the liquid optical material, expansion of the liquid optical material applied at a predetermined position can be prevented by the dislocation distribution. As a result, it becomes possible to improve the precision of patterning, maintaining the characteristics, such as low cost, high throughput, and the high degree of freedom of an optical material.

In order to achieve the above object, the invention according to the thirty-fifth aspect has a configuration in which an optical material is selectively disposed at a predetermined position on a display substrate, wherein the optical material is in a liquid state when the optical material is applied at least in the predetermined position. A method of manufacturing a semiconductor device, the method comprising: forming a potential distribution on the display substrate such that the predetermined position and its periphery are at different potentials; and charging the liquid optical material to a potential at which repulsive force is generated between the periphery of the predetermined position. After this, the process of apply | coating to the said predetermined position was provided.

According to the invention of the thirty-fifth aspect, since repulsive force is generated between the applied liquid optical material and the periphery of the predetermined position, it is possible to prevent diffusion of the liquid optical material applied to the predetermined position to the surroundings. As a result, it becomes possible to improve the precision of patterning, maintaining the characteristics, such as low cost, high throughput, and the high degree of freedom of an optical material.

In order to achieve the above object, the invention according to the thirty sixth aspect has a configuration in which an optical material is selectively disposed at a predetermined position on a display substrate, wherein the optical material is a liquid crystal matrix-type display element when applied to at least the predetermined position A method of manufacturing a semiconductor device, the method comprising: forming a plurality of first bus wirings on the display substrate; forming a potential distribution on the display substrate such that the predetermined position and the periphery thereof are at different potentials; Charging the optical material to a potential at which repulsive force is generated between the periphery of the predetermined position, and then applying the optical material to the predetermined position and a plurality of second bus wirings crossing the first bus wiring to cover the optical material. It was equipped with the process of forming.

According to the thirty sixth aspect of the present invention, in the method for manufacturing a passive matrix display element, the same effects as those of the thirty fifth aspect can be obtained.

In order to achieve the above object, the invention according to the thirty-seventh aspect has a configuration in which an optical material is selectively disposed at a predetermined position on a display substrate, wherein the optical material is a liquid crystal when applied to at least the predetermined position. A manufacturing method comprising the steps of: forming a plurality of first bus wirings on the display substrate; forming a potential distribution on the display substrate such that the predetermined position and its surroundings are at different potentials; and the liquid optical Charging a material to a potential at which repulsive force is generated between the periphery of the predetermined position, and then applying it to the predetermined position; forming a plurality of second bus wirings on the substrate for peeling through a release layer; and The first bus wiring and the second bus were separated from the peeling layer on the peeling substrate on the display substrate coated with the optical material. The process of transferring so that wiring may cross | intersect was provided.

According to the thirty-seventh aspect of the present invention, in the method for manufacturing a passive matrix display element, the same effects as those of the invention of the thirty-fifth aspect can be exhibited, and after the optical material is disposed, the second surface is provided on the second surface. Since the process of forming a bus wiring layer and etching this is not performed, it becomes possible to reduce the damage by the subsequent process to base materials, such as an optical material. In order to achieve the above object, the invention according to the thirty-eighth aspect has a configuration in which an optical material is selectively disposed at a predetermined position on a display substrate, wherein the optical material is a liquid crystal when applied to at least the predetermined position. In the manufacturing method, a wiring including a plurality of scanning lines and signal lines, a pixel electrode corresponding to the predetermined position, and a switching element for controlling the state of the pixel electrode in accordance with the state of the wiring are formed on the display substrate. A step of forming a potential distribution on the display substrate so that the predetermined position and its surroundings are at different potentials, and charging the liquid optical material to a potential at which repulsive force is generated between the surroundings of the predetermined position. And applying to the predetermined position.

According to the thirty-eighth aspect of the present invention, in the method for producing an active matrix display element, the same operational effects as those of the thirty-fifth aspect can be obtained.

In order to achieve the above object, the invention according to the thirty-ninth aspect of the present invention has a configuration in which an optical material is selectively disposed at a predetermined position on a display substrate, wherein the optical material is a liquid matrix when at least applied to the predetermined position. A method of manufacturing a display element, comprising: forming a potential distribution on the display substrate such that the predetermined position and its surroundings are at different potentials, and a potential at which repulsive force is generated between the liquid optical material around the predetermined position; In accordance with the step of applying a charge to the predetermined position, a wiring including a plurality of scanning lines and signal lines on the substrate for peeling through a peeling layer, a pixel electrode corresponding to the predetermined position, and the state of the wiring. Forming a switching element for controlling the state of the pixel electrode, and on the display substrate coated with the optical material It was provided with the step of transferring the structure peeled off from the peeling layer on the peeling substrate for a group.

According to the invention according to the thirty-ninth aspect, in the method for manufacturing an active matrix display element, the same effects as those of the invention according to the thirty-fifth aspect can be exhibited, and after the optical material is disposed, the wiring is formed on the upper surface thereof. Since the process of forming a layer or a layer for pixel electrodes and etching them is not performed, damage caused by a subsequent process to a base material such as an optical material, or an optical material such as a scan line, a signal line, a pixel electrode or a switching element, etc. It becomes possible to reduce the damage by application | coating etc.

According to a forty-fourth aspect of the present invention, in the method for manufacturing a matrix type display element according to the thirty-fifth to thirty-ninth aspect, the potential distribution is formed so that at least the periphery of the predetermined position on the display substrate is charged. .

According to the invention according to the forty aspect, repulsive force can be surely generated by charging the liquid optical material.

According to a forty-first aspect of the present invention, in the method for manufacturing a matrix display device according to the thirty-sixth or thirty-seventth aspect, the potential distribution is formed by applying a voltage to the first bus wiring.

In the method according to the forty-second aspect, in the method for manufacturing a matrix display element according to the forty-eighth aspect, the potential distribution is formed by applying a voltage to the wiring.

In the manufacturing method of the matrix display device according to the forty-third aspect of the present invention, the potential distribution is formed by applying a voltage to the pixel electrode.

In a method of manufacturing a matrix display device according to a forty-fourth aspect of the present invention, in the method for manufacturing a matrix type display element, the potential distribution is applied to the scan line sequentially and at the same time by applying a potential to the signal line. It was formed by applying a voltage to the pixel electrode through the switching element.

According to a forty-fifth aspect of the present invention, there is provided a method for manufacturing a matrix display device according to the thirty-fifth to thirty-ninth aspect, wherein the light shielding layer is formed, and the potential distribution is the light shielding layer. It was made to form by applying a voltage to the.

According to the inventions according to the forty-first aspect to the forty-fifth aspect, since the potential distribution is formed using the configuration included in the matrix display element, an increase in the process can be suppressed.

According to a forty-sixth aspect of the present invention, there is provided a matrix type display device according to the thirty-fourth to thirty-ninth aspect, and the forty-fourth to forty-fourth aspect, wherein the potential distribution is in the predetermined position and in the periphery thereof. Formed to be reverse polarity.

According to the invention according to the forty sixth aspect, since an attractive force is generated between the liquid optical material and the predetermined position, and a repulsion occurs between the liquid optical material and the periphery of the predetermined position, the optical material easily accumulates at the predetermined position. The precision of patterning is further improved.

Further, the second to eighth, tenth, eleventh, twentieth to twenty-fourth, twenty-sixth, twenty-seventh, twenty-ninth, thirty-fourth to thirty-ninth, and forty-second aspects As said optical material in the manufacturing method of the matrix type display element which is invention which concerns on form-forty-fourth aspect, inorganic or organic fluorescent material (light emitting material) can be applied like the invention concerning 47th aspect, for example. . As fluorescent material (light emitting material), EL (Electroluminescense) is most suitable. What is necessary is just to melt | dissolve in a suitable solvent, and to set it as a liquid optical material.

Moreover, the said 2nd form, 3rd form, 5th-8th form, 10th form, 20th form-24th form, 26th form, 27th form, 29th form, 34th form-39th form In the optical material in the method for producing a matrix type display element according to the forty-second aspect to forty-fourth aspect, for example, a liquid crystal can be applied as in the invention according to the forty-eighth aspect.

According to a forty-ninth aspect of the present invention, the seventh, eighth, tenth, eleventh, twenty-third, twenty-fourth, twenty-sixth, twenty-seventh, thirty-eighth, thirty-ninth, In the method for manufacturing a matrix display device according to the forty-fourth aspect to the forty-fourth aspect, the switching element is formed of amorphous silicon, polycrystalline silicon formed by a high temperature process of 600 ° C. or higher, or polycrystalline silicon formed by a low temperature process of 600 ° C. or lower. To do so.

The invention according to the forty-ninth aspect also makes it possible to improve the accuracy of patterning of optical materials. In particular, when polycrystalline silicon formed in a low temperature process is used, it is possible to achieve both low cost due to the use of a glass substrate and high performance due to high mobility.

Best Mode for Carrying Out the Invention Preferred embodiments of the present invention will now be described with reference to the drawings.

(1) First embodiment

1 to 5 show a first embodiment of the present invention, which applies the matrix type display element and the manufacturing method thereof according to the present invention to an active matrix display device using an EL display element. More specifically, an example of applying a light emitting material as an optical material by using a scanning line, a signal line, and a common supply wire as wiring is illustrated.

FIG. 1 is a circuit diagram showing a part of the display device 1 according to the present embodiment, in which the display device 1 intersects a plurality of scan lines 131 and these scan lines 131 on a transparent display substrate. A plurality of signal lines 132 extending in the direction and a plurality of common supply wires 133 extending in parallel to the signal lines 132 are respectively wired, and at the same time, the scanning lines 131 and the signal lines 132 At each intersection, the pixel region 1A is formed.

For the signal line 132, a data side driving circuit 3 including a shift register, a level shifter, a video line, and an analog switch is formed.

In addition, the scanning side driving circuit 4 including the shift register and the level shifter is formed for the scanning line 131. In each of the pixel regions 1A, a switching thin film transistor 142 in which a scanning signal is supplied to the gate electrode through the scanning line 131, and an image signal supplied from the signal line 132 through the switching thin film transistor 142. Is a holding capacitor cap for holding a capacitor, a current thin film transistor 143 to which an image signal held by the holding capacitor cap is supplied to a gate electrode, and a common supply wire 133 through the current thin film transistor 143. ), A pixel electrode 141 into which a driving current flows from the common supply wire 133, and a light emitting element 140 sandwiched between the pixel electrode 141 and the reflective electrode 154 are formed. .

With such a configuration, when the scanning line 131 is driven and the switching thin film transistor 142 is turned on, the potential of the signal line 132 at that time is held in the holding capacitor cap, and the state of the holding capacitor cap is maintained. Therefore, the on / off state of the current thin film transistor 143 is determined. Since the current flows from the common supply wire 133 to the pixel electrode 141 through the channel of the current thin film transistor 143 and the current flows to the reflective electrode 154 through the light emitting element 140, the light is emitted. The element 140 emits light in accordance with the amount of current flowing therethrough.

Here, the planar structure of each pixel region 1A is an enlarged plan view in which the reflective electrode or the light emitting element is removed, and as shown in FIG. 2, the signal lines 132 are formed on all sides of the rectangular pixel electrode 141. And a common supply wire 133, a scanning line 131, and another pixel electrode scanning line (not shown).

3 to 5 are cross-sectional views sequentially illustrating the manufacturing process of the pixel region 1A, and correspond to the cross section taken along the line A-A of FIG. 3 to 5, the manufacturing process of the pixel region 1A will be described.

First, as shown in FIG. 3A, the transparent display substrate 121 has a thickness of about 2000 to 5000 by plasma CVD method using TEOS (tetraethoxysilane), oxygen gas, or the like as a source gas, as necessary. An underlayer protective film (not shown) made of an silicon oxide film of omstrom is formed. Subsequently, the temperature of the display substrate 121 is set to about 350 ^° C., and the semiconductor film 200 made of an amorphous silicon film having a thickness of about 300 to 700 Ohmstrom is formed on the surface of the underlying protective film by plasma CVD. do. Next, a crystallization process such as laser annealing or solid phase growth is performed on the semiconductor film 200 made of an amorphous silicon film, and the semiconductor film 200 is crystallized on the polysilicon film. In the laser annealing method, for example, an aximmer laser uses a line beam having a beam length of 400 mm, and its output intensity is 200 mJ / cm ² , for example. As for the line beam, the line beam is scanned so that a portion corresponding to 90% of the peak value of the laser intensity in the shorter direction overlaps each region.

Subsequently, as shown in FIG. 3B, the semiconductor film 200 is patterned to form an island-like semiconductor film 210, and TEOS (tetraethoxysilane), oxygen gas, or the like is used for the surface thereof. As a gas, a gate insulating film 220 made of a silicon oxide film or a nitride film having a thickness of about 600 to 1500 ohms is formed by plasma CVD. The semiconductor film 210 serves as a channel region and a source / drain region of the current thin film transistor 143, but also forms a semiconductor film serving as a channel region and a source / drain region of the switching thin film transistor 142 at another cross-sectional position. It is. As a result, in the manufacturing process shown in Figs. 3 to 5, the two kinds of transistors 142 and 143 are made at the same time, but are made in the same order. Only the description will be given, and the description of the switching thin film transistor is omitted.

Subsequently, as shown in FIG. 3C, a conductive film made of a metal film such as aluminum, tantalum, molybdenum, titanium, tungsten, or the like is formed by a sputtering method, and then patterned to form a gate electrode 143A.

In this state, a high concentration of phosphorus ions is introduced to form source and drain regions 143a and 143b in the silicon thin film 210 in a self-aligned manner with respect to the gate electrode 143A. The portion where no impurities are introduced becomes the channel region 143c.

Subsequently, as shown in FIG. 3D, after the interlayer insulating film 230 is formed, the contact holes 232 and 234 are formed, and the relay electrodes 236 and 238 are buried in the contact holes 232 and 234. .

Subsequently, as shown in FIG. 3E, a signal line 132, a common supply wire 133, and a scan line (not shown in FIG. 3) are formed on the interlayer insulating film 230. At this time, the wirings of the signal line 132, the common supply wire 133, and the scanning line are formed sufficiently thick regardless of the thickness required as the wiring. Specifically, each wiring is formed to a thickness of about 1 to 2 μm. Here, the relay electrode 238 and each of the wirings may be formed in the same process. At this time, the relay electrode 236 is formed by an ITO film described later. Then, the interlayer insulating film 240 is formed to cover the upper surface of each wiring, the contact hole 242 is formed at a position corresponding to the relay electrode 236, and is also embedded in the contact hole 242. An ITO film is formed, and the ITO film is patterned to form a pixel electrode 141 electrically connected to the source / drain region 143a at a predetermined position surrounded by the signal line 132, the common supply wire 133, and the scan line. .

In FIG. 3E, portions inserted into the signal line 132 and the common supply wire 133 correspond to predetermined positions where optical materials are selectively disposed. A step 111 is formed between the predetermined position and the circumference thereof by the signal line 132 or the common supply wire 133. Specifically, a concave step 111 is formed in which the predetermined position is lower than its periphery.

Subsequently, as shown in FIG. 4A, the liquid crystal for forming the hole injection layer in contact with the lower layer portion of the light emitting element 140 by the inkjet head method, with the upper surface of the display substrate 121 facing upward. The optical material (precursor) 114A of the melted solution liquid) is discharged, and this is selectively applied in an area (predetermined position) surrounded by the step 111. In addition, since the specific content of an inkjet system is not the summary of this invention, it abbreviate | omits (for example, refer to Unexamined-Japanese-Patent No. 56-13184 or Unexamined-Japanese-Patent No. 2-167751 regarding such a system).

Examples of the material for forming the hole injection layer include polyphenylenevinylene, 1,1-bis- (4-N, N-ditriaminoaminophenyl) cyclohexane, and tris (8) in which the polymer precursor is polytetrahydrothiophenylphenylene. -Hydroxyquinolinol) aluminum, and the like. At this time, since the liquid precursor 114A has high fluidity, the liquid precursor 114A tries to widen in the horizontal direction. However, since the step 111 is formed so as to surround the coated position, the amount of coating of the liquid precursor 114A per one time is increased. If the amount is not extremely large, the liquid precursor 114A is prevented from spreading beyond the step 111 to the outside of the predetermined position.

Subsequently, as shown in FIG. 4B, the solvent of the liquid precursor 114A is evaporated by heating or light irradiation to form a solid thin hole injection layer 140a on the pixel electrode 141. The concentration is based on the concentration of the precursor 114A in the liquid phase, but is not formed outside the thin hole injection layer 140a. Thus, when a thicker hole injection layer 140 a is required, the processes of FIGS. 4A and 4B are repeatedly performed as many times as necessary, and as shown in FIG. 4C, the hole injection layer 140A having a sufficient thickness is formed. Form.

Subsequently, as shown in FIG. 5A, the liquid crystal (melted in a solvent) for forming an organic semiconductor film that is in contact with the upper layer portion of the light emitting element 140 by the inkjet head method, with the upper surface of the display substrate 121 facing upward. The optical material (organic fluorescent material) ll4B in a true solution state is discharged, and this is selectively applied in an area (predetermined position) surrounded by the step 111.

As organic fluorescent materials, cyanopolyphenylenevinylene, polyphenylenevinylene, polyalkylphenylene, 2, 3, 6, 7-tetrahydro-11-oxo-1H, 5H, 11H (1) benzopyrano [6, 7, 8-ij] -quinolidine-10-carboxylic acid, 1, 1-bis- (4-N, N-dithrylaminophenyl) cyclohexane, 2-13 ', 4'-dihydroxy Phenyl) -3,5,7-trihydroxy-1-benzopyryllium perchlorate, tris (8-hydroquinolinol) aluminum, 2,3,6,7-tetrahydro-9-methyl-11-oxo- 1H, 5H, 11H (1) benzopyrano [6, 7, 8-ij] -quinolidine, aromatic diamine derivatives (TDP), oxydiazole dimers (OXD), oxydiazole derivatives (PBD), dityl Arylene derivatives (DSA), quinolinol-based metal complexes, beryllium-benzoquinolinol complexes (Bebq), triphenylamine derivatives (MTDATA), distyryl derivatives, pyrazoline dimers, rubles, quinacridones, triazole derivatives, Polyphenylene, polyalkylfluorene, polyalkylthiophene, azomethine zinc complex, poly Porphyrin may be mentioned zinc complexes, benzoxazole zinc complex, phenanthroline complex flow path volume and the like.

At this time, since the liquid organic fluorescent material 114B has high fluidity, it also tries to spread widely in the horizontal direction, but because the step 111 is formed to surround the applied position, the liquid organic fluorescent material 114B If the application amount per step is not excessively large, the liquid organic fluorescent material 114B is prevented from spreading widely outside the step 111 beyond the step 111.

Subsequently, as shown in FIG. 5B, the solvent of the liquid organic fluorescent material 114B is evaporated by heating or light irradiation to form a thin solid organic semiconductor film 140b on the hole injection layer 140A. . The concentration of the organic fluorescent material 114B in the liquid phase is here, but is not formed except the thin organic semiconductor film 140b. Thus, in the case where a thicker organic semiconductor film 140B is required, the steps of FIGS. 5A and 5B are repeatedly performed as necessary, and as shown in FIG. 5C, the organic semiconductor film 140B having a sufficient thickness is formed. Form. The light emitting element 140 is formed of the hole injection layer 140A and the organic semiconductor film 140B. Finally, as shown in FIG. 5D, the reflective electrode 154 is formed on the entire surface of the display substrate 121 or in a stripe shape.

As described above, in this embodiment, wirings such as signal lines 132, common wirings 133, and the like are formed so as to surround the treatment positions where the light emitting elements 140 are arranged in all directions, and the wirings are formed thicker than usual so that the step Since the 111 is formed and the liquid precursor 114A and the liquid organic fluorescent material 114B are selectively applied, there is an advantage that the patterning accuracy of the light emitting element 140 is high.

When the step 111 is formed, the reflective electrode 154 is formed on a relatively large uneven surface, but if the thickness of the reflective electrode 154 is thickened to some extent, there is a great possibility that a defect such as disconnection may occur. Becomes smaller.

In addition, since the step 111 is formed by using wiring such as the signal line 132 and the common wiring 133, the new process is not increased in particular, so that there is no significant complexity in the manufacturing process.

In addition, in order to reliably prevent the liquid precursor 114A or the liquid organic fluorescent material 114B from flowing from the inside of the step 111 to the outside, the liquid precursor 114A or the liquid organic fluorescent material 114B. It is preferable that a relationship such as ( _a ) (d) ( _a ) d _a <d _r is established between the coating thickness d _a and the height d _r of the step 111.

However, since the hole injection layer 140A is already formed when the liquid organic fluorescent material 114B is applied, the height d _r of the step 111 is determined at the initial height of the hole injection layer 140A. It is necessary to think in minutes.

In addition, while satisfying Equation 1 above, the driving voltage V _d applied to the organic semiconductor film 140B, the sum db of each coating thickness of the liquid organic fluorescent material 114B, and the liquid Between the concentration r of the organic fluorescent material 114B and the minimum electric field strength (critical electric field strength) E _t at which the optical characteristic change appears in the organic semiconductor film 140B (Equation 2) V _d When the relationship such as (d _b .r)> E _t is established, the relationship between the coating thickness and the driving voltage is made clear, and the expression of the optical effect of the organic semiconductor film 140b is compensated.

On the other hand, in order to ensure the flatness of the step 111 and the light emitting element 140, and to enable the sameness of the optical characteristic change of the organic semiconductor film 140B and the prevention of a short circuit, the completion of the light emitting element 140 is completed. It is sufficient to establish a relationship such as d _f = d _r (Equation 3) between the thickness d _f and the height d _r of the step 111.

In addition, when the following Equation 3 is satisfied and the following Equation 4 is satisfied, the relationship between the thickness at the completion of the light emitting device 140 and the driving voltage is made clear, and the optical effect of the organic fluorescent material is expressed. Is compensated.

(Equation 4) V _d / d _f > E _t

Note that d _f in this case is not the entire light emitting element 140, but the thickness at the completion of the organic semiconductor film 140B.

The optical material forming the upper layer portion of the light emitting element 140 is not limited to the organic fluorescent material 114B, but may be an inorganic fluorescent material.

In addition, the transistors 142 and 143 as switching elements are preferably formed of polycrystalline silicon formed by a low temperature process of 600 ° C. or lower, thereby reducing the cost and high mobility by using a glass substrate. The high performance by this is compatible. In addition, the switching element may be formed of amorphous silicon or polycrystalline silicon formed by a high temperature process of 600 ^° C. or higher.

The switching thin film transistor 142 and the current thin film transistor 143 may be provided with other transistors or may be driven with one transistor.

The step 111 may be formed by the first bus wiring of the passive matrix display element, the scanning line 131 of the active matrix display element, and the light shielding layer.

In addition, although the luminous efficiency (hole injection rate) slightly decreases as the light emitting element 140, the hole injection layer 140A may be omitted. In addition, the electron injection layer may be formed between the organic semiconductor film 140B and the reflective electrode 154 instead of the hole injection layer 140A, or both the hole injection layer and the electron injection layer may be formed.

In addition, in the above embodiment, the case where the entire light emitting elements 140 are selectively disposed with the color display in mind is described. However, in the case of the display device 1 of the monochrome display, for example, as shown in FIG. As described above, the organic semiconductor film 140B may be formed on the entire surface of the display substrate 121 in the same manner. However, even in this case, since the hole injection layer 140A must be selectively disposed at each predetermined position in order to prevent cross talk, application using the step 111 is extremely effective.

(2) Second Embodiment

Fig. 7 is a diagram showing a second embodiment of the present invention, which applies the matrix type display element and the manufacturing method thereof according to the present invention to a display device of a passive matrix using an EL display element. 7A is a plan view showing an arrangement relationship between a plurality of first bus lines 300 and a plurality of second bus lines 310 arranged in a direction orthogonal thereto, and FIG. 7B is a BB of FIG. 7A. Line cross section. In addition, the same code | symbol is attached | subjected to the structure similar to the said 1st Example, and the overlapping description is abbreviate | omitted. In addition, since a detailed manufacturing process etc. are the same as that of the said 1st Example, the illustration and description are abbreviate | omitted.

That is, in this embodiment, insulating films 320 such as SiO ₂ are arranged so as to surround a predetermined position where the light emitting element 140 is arranged, whereby a step is provided between the predetermined position and its periphery. 111 is formed.

Also in such a configuration, when selectively applying the liquid precursor 114A or the liquid organic fluorescent material 114B as in the first embodiment, it is possible to prevent them from leaking out to the surroundings, and highly accurate patterning is performed. There are advantages such as being able to.

(3) Third embodiment

Fig. 8 is a view showing a third embodiment of the present invention, and this embodiment, like the first embodiment, also has an active matrix type using the EL display element as the matrix display element and the manufacturing method thereof according to the present invention. It is applied to the display device. More specifically, by forming the step 111 by using the pixel electrode 141, high precision patterning can be performed. In addition, the same code | symbol is attached | subjected to the structure similar to the said Example. 8 is sectional drawing which shows the middle of a manufacturing process, Since the front and back are substantially the same as the said 1st Example, the illustration and description are abbreviate | omitted.

That is, in the present embodiment, the pixel electrode 141 is formed thicker than usual, whereby the step 111 is formed between the surroundings. In other words, in this embodiment, a convex step is formed in which the pixel electrode 141 to which the optical material is applied later is higher than its periphery.

Then, as in the first embodiment, an optical material (precursor) 114A in a liquid phase (solution dissolved in a solvent) for forming a hole injection layer in contact with the lower layer portion of the light emitting element 140 by the inkjet head method. Is discharged and coated on the upper surface of the pixel electrode 141.

However, unlike the case of the first embodiment, the liquid crystal precursor is formed in such a manner that the display substrate 121 is turned upside down, that is, the surface of the pixel electrode l41 to which the liquid precursor 114A is applied is faced downward. 114A) is applied.

Then, the liquid precursor 114A is collected on the upper surface of the pixel electrode 141 by gravity and surface tension, and does not spread widely around it. Therefore, when it solidifies by heating, light irradiation, etc., the thin hole injection layer similar to FIG. 4B can be formed, and when this is repeated, a hole injection layer is formed. In the same manner, an organic semiconductor film is also formed.

As described above, in the present embodiment, the patterning accuracy of the light emitting device can be improved by applying the liquid optical material using the convex step 111.

The amount of liquid optical material collected on the upper surface of the pixel electrode 141 may be adjusted using inertial forces such as centrifugal force.

(4) Fourth Embodiment

Fig. 9 is a diagram showing a fourth embodiment of the present invention, and this embodiment is also the active matrix display using the EL display element in the matrix type display element and the manufacturing method thereof according to the present invention, as in the first embodiment. Applied to the device. In addition, the same code | symbol is attached | subjected to the structure similar to the said Example. In addition, FIG. 9 is sectional drawing which shows the middle of a manufacturing process, Since the front and back are substantially the same as the said 1st Example, the illustration and description are abbreviate | omitted.

That is, in this embodiment, first, the reflective electrode 154 is formed on the display substrate 121, and then on the reflective electrode 154, the insulating film surrounds a predetermined position where the light emitting element 140 is disposed later. 320 is formed, thereby forming a concave step 111 whose predetermined position is lower than its periphery.

As in the first embodiment, the light emitting element 140 is formed by selectively applying a liquid optical material in an area surrounded by the step 111 by an inkjet method.

Meanwhile, the scan line 131, the signal line 132, the pixel electrode 141, the switching thin film transistor 142, the current thin film transistor 143, and the insulating film are formed on the peeling substrate 122 through the peeling layer 152. 240).

Finally, the structure peeled from the peeling layer 152 on the peeling substrate 122 is transferred onto the display substrate 121.

As described above, also in the present embodiment, since the liquid optical material is coated using the step 111, high-precision patterning can be performed.

In addition, in the present embodiment, damage caused by subsequent processes in the base material such as the light emitting element 140, or the scanning line 131, the signal line 132, the pixel electrode 141, the switching thin film transistor 142, the current Damage to the thin film transistor 143 or the insulating film 240 due to application of an optical material or the like can be reduced.

Although the present embodiment has been described as an active matrix display element, a passive matrix display element may be used.

(5) Fifth Embodiment

Fig. 10 is a diagram showing a fifth embodiment of the present invention, and this embodiment, like the first embodiment, also has an active matrix type using the EL display element and the matrix display element and the manufacturing method thereof according to the present invention. It is applied to the display device. In addition, the same code | symbol is attached | subjected to the structure similar to the said Example. 10 is a cross-sectional view showing the middle of the manufacturing process, and since the front and rear thereof are substantially the same as those of the first embodiment, illustration and description are omitted. That is, in this embodiment, the concave step 111 is formed by using the interlayer insulating film 240, whereby the effect similar to that of the first embodiment is obtained. In addition, since the step 111 is formed using the interlayer insulating film 240, in particular, a new process does not increase, resulting in no significant complexity of the manufacturing process.

(6) Sixth Embodiment

Fig. 11 is a diagram showing a sixth embodiment of the present invention, and this embodiment is also the same as the first embodiment, and the active matrix display using the EL display element as the matrix type display element and the manufacturing method thereof according to the present invention. Applied to the device. In addition, the same code | symbol is attached | subjected to the structure similar to the said Example. 11 is sectional drawing which shows the middle of a manufacturing process, Since the front and back are substantially the same as the said 1st Example, the illustration and description are abbreviate | omitted.

That is, in the present embodiment, rather than improving the patterning accuracy by using a step, the hydrophilicity of the predetermined position to which the liquid optical material is applied is made relatively stronger than the hydrophilicity around the liquid, so that the applied liquid optical material is spread around. It did not spread.

Specifically, as shown in FIG. 11, after the interlayer insulating film 240 is formed, an amorphous silicon layer 155 is formed on the upper surface thereof. Since the amorphous silicon layer 155 has a stronger water repellency than the ITO forming the pixel electrode 141, a distribution of water repellency and hydrophilicity in which the hydrophilicity of the surface of the pixel electrode 141 is relatively stronger than that of the surroundings is formed. do.

As in the first embodiment, the light emitting device 140 is formed by selectively applying a liquid optical material toward the upper surface of the pixel electrode 141 by an inkjet method, and finally, a reflective electrode is formed. .

Thus, also in this embodiment, since the optical material of a liquid is apply | coated after forming a desired water repellency and lyophilic distribution, the precision of patterning can be improved.

Moreover, of course, this embodiment can also be applied to a passive matrix display element.

Moreover, the process of transferring the structure formed on the peeling substrate 121 through the peeling layer 152 to the display substrate 121 may be included.

In this embodiment, the desired water repellency and hydrophilic distribution are formed by the amorphous silicon layer 155. However, the water repellency and hydrophilicity distribution is made of metal, an insulating film such as anodized film, polyimide or silicon oxide, or other materials. It may be formed by.

In the case of the passive matrix display element, the first bus wiring and the active matrix display element may be formed by the scan line 131, the signal line 132, the pixel electrode 141, the insulating film 240, or the light shielding layer.

In addition, in the present embodiment, the liquid optical material is explained on the premise that it is an aqueous solution, but a liquid optical material using a solution of another liquid may be used, and in this case, liquid repellency and lyophilic properties may be obtained for the solution. .

(7) Seventh Embodiment

In the seventh embodiment of the present invention, since the cross-sectional structure is the same as that in Fig. 10 used in the fifth embodiment, it will be described using this.

That is, in the present embodiment, the interlayer insulating film 240 is made of SiO ₂ , the surface of the pixel electrode 141 is irradiated with ultraviolet rays, and then the liquid optical material is selectively coated. It is.

In this manufacturing process, not only the step 111 is formed, but also a strong liquid repellency distribution is formed along the surface of the interlayer insulating film 240, so that the applied liquid optical material has a step 111 and the interlayer insulating film 240. By the action of both the liquid-repellent of the is easily gathered in a predetermined position. As a result, since the action of both the fifth embodiment and the sixth embodiment is exerted, the patterning accuracy of the light emitting element 140 can be further improved.

The timing of irradiating ultraviolet rays may be either before or after the surface of the pixel electrode 141 is exposed, and may be appropriately selected according to the material for forming the interlayer insulating film 240, the material for forming the pixel electrode 141, and the like. Incidentally, when ultraviolet rays are irradiated before exposing the surface of the pixel electrode 141, the inner wall surface of the step 111 must have strong liquid repellency, so that liquid optical materials are collected in the area surrounded by the step 111. This is advantageous. On the contrary, in the case of irradiating ultraviolet rays after exposing the surface of the pixel electrode 141, it is necessary to irradiate ultraviolet rays vertically so that the liquid repellency of the inner wall surface of the step 111 must be strong. Since ultraviolet rays are irradiated after the etching process at the time of exposing the surface of), there is an advantage that the liquid repellency is not weakened by the etching process.

As the material for forming the interlayer insulating film 240, for example, a photoresist may be used, or polyimide may be used, and these films have an advantage that a film can be formed by spin coating.

The material forming the interlayer insulating film 240 may not be irradiated with ultraviolet light, but may be made to have strong liquid repellency by irradiating plasma such as O ₂ , CF ₃ , or Ar.

(8) Eighth Embodiment

Fig. 12 is a diagram showing an eighth embodiment of the present invention, and this embodiment is also like the first embodiment, and an active matrix display device using the EL display element as the matrix display element and the manufacturing method thereof according to the present invention. Applied to. In addition, the same code | symbol is attached | subjected to the structure similar to the said Example. 12 is sectional drawing which shows the middle of a manufacturing process, Since back and front are substantially the same as the said 1st Example, illustration and description are abbreviate | omitted. That is, in the present embodiment, the patterning accuracy is improved by using the attraction force and the repulsive force due to dislocations, without improving the patterning accuracy by using the step, distribution of liquid repellency, and lyophilic.

In other words, as shown in FIG. 12, the pixel electrode 141 becomes a negative potential by driving the signal line 132 or the common supply wire 133 and by appropriately turning on and off a transistor (not shown). The potential distribution at which the insulating film 240 becomes the plasma potential is formed. Then, by the inkjet method, the positively charged liquid optical material ll4 is selectively applied to a predetermined position.

As described above, in the present embodiment, the desired potential distribution is formed on the display substrate 121, and the liquid phase optical is applied using the attractive force and the repulsive force between the potential distribution and the positively charged liquid optical material 114. Since the material is selectively applied, the accuracy of patterning can be improved.

In particular, in the present embodiment, since the liquid optical material 114 is charged, by using not only spontaneous polarization but also charge charge, the effect of improving the accuracy of patterning is further enhanced.

Although the present embodiment shows a case where the present invention is applied to an active matrix display element, it is also applicable to a passive matrix display element.

Moreover, the process of transferring the structure formed on the peeling substrate 121 through the peeling layer 152 to the display substrate 121 may be included.

In the present embodiment, the desired potential distribution is sequentially applied to the scan line 131, and at the same time to the signal line 132 and the common line 133, and the switching thin film transistor 142 to the pixel electrode 141. And applying a potential through the current thin film transistor 143. By forming the potential distribution as the scan line 131, the signal line 132, the common line 133, and the pixel electrode 141, an increase in the process can be suppressed. In the passive matrix display element, the potential distribution can be formed by the first bus wiring and the light shielding layer.

In this embodiment, a potential is applied to both the pixel electrode 141 and the interlayer insulating film 240 around it, but the present invention is not limited thereto. For example, as illustrated in FIG. 13, the pixel electrode 141 is provided. Note that a positive potential may be applied only to the interlayer insulating film 240 without applying a potential, and then applied after the liquid optical material 114 is positively charged. In this manner, since the liquid optical material 114 can be surely positively charged even after being applied, the liquid optical material 114 is attracted to the surroundings due to the repulsive force between the surrounding interlayer insulating films 240. It is possible to more reliably prevent leakage.

In addition, unlike the steps described in the above embodiments, for example, the step 111 may be formed by applying a liquid material, or the step 111 is formed on the peeling substrate through a release layer to form a display substrate. You may form by transferring the structure peeled from the peeling layer on the peeling substrate on.

In each of the above embodiments, organic or inorganic EL is applicable as the optical material, but the present invention is not limited thereto, and the optical material may be liquid crystal.

As described above, according to the present invention, since the liquid optical material is applied by using a step, a desired liquid repellency and a lyophilic distribution, a desired dislocation distribution, or the like, the patterning accuracy of the optical material can be improved. It is effective.

1 is a circuit diagram showing a part of a display device in a first embodiment of the present invention.

2 is an enlarged plan view showing a planar structure of a pixel region;

3 to 5 are sectional views showing the flow of the manufacturing process in the first embodiment.

6 is a sectional view showing a modification of the first embodiment.

7 is a plan view and a sectional view of the second embodiment;

8 is a cross-sectional view showing a part of the manufacturing process of the third embodiment;

9 is a sectional view showing a part of the manufacturing process of the fourth embodiment;

10 is a sectional view showing a part of the manufacturing process of the fifth embodiment;

11 is a sectional view showing a part of the manufacturing process of the sixth embodiment;

12 is a sectional view showing a part of the manufacturing process of the eighth embodiment;

Fig. 13 is a sectional view showing a modification of the eighth embodiment.

* Description of the symbols for the main parts of the drawings *

1: display device 131: scanning line

132: signal line 133: common supply line

Claims (2)

A wiring including a plurality of signal lines and a scanning line, a pixel electrode arranged to correspond to an intersection of the plurality of signal lines and a scanning line, an opposing electrode facing the pixel electrode, and optical interposed between the pixel electrode and the opposing electrode A matrix type light emitting device comprising a light emitting element comprising a material, The pixel electrode is surrounded by the wiring and an insulating film stacked on the wiring, The formation region of the pixel electrode is lower than the height consisting of the wiring and the insulating film, And the optical material is selectively disposed in a region surrounded by the wiring and an insulating film laminated on the wiring. The method of claim 1, And said wiring comprises a common supply wire.