JP4067028B2 - Manufacturing method of optical device - Google Patents

Description

The present invention relates to a display element in which an optical material such as a fluorescent material (light emitting material) or a light modulation material is selectively disposed at a predetermined position above a substrate.

Matrix-type display elements such as LCD (Liquid Crystal Display) and EL (Electroluminescense) display elements are used in various types and in large numbers as display elements that realize light weight, thinness, high image quality, and high definition. The matrix type display element includes a matrix-like bus wiring, an optical material (light emitting material or light modulation material), and another structure as necessary.

Here, in the case of a single-color matrix display element, wirings and electrodes need to be arranged in a matrix on the display substrate, but the optical material can be uniformly applied to the entire surface of the display substrate.

On the other hand, for example, when a so-called color matrix type display element is to be realized by an EL display element that emits light by itself, three pixel electrodes are arranged for each pixel corresponding to the three primary colors of RGB light. RG for each pixel electrode
An optical material corresponding to B must be applied. That is, it is necessary to selectively arrange the optical material at a predetermined position.

Therefore, development of a method for patterning an optical material is desired, but examples of effective patterning methods include etching and coating.

  The process in the case of etching is as follows.

First, a layer of an optical material is formed on a display substrate. Next, a resist film is formed on the optical material layer, and the resist film is exposed through a mask and then patterned. Etching is then performed to pattern the optical material layer in accordance with the resist pattern.

However, in this case, since the number of processes is large and each material and apparatus are expensive, the cost becomes high. Further, since the number of processes is large and each process is complicated, the throughput is also poor. Furthermore, depending on the chemical properties of the optical material, the resistance to resists and etchants is low, and these processes may not be possible.

  On the other hand, the process in the case of application is as follows.

First, an optical material is dissolved in a solvent to form a liquid, and this liquid optical material is selectively applied to a predetermined position on the display substrate by an inkjet method or the like. Then, if necessary, the optical material is solidified by heating, light irradiation, or the like. In this case, the number of processes is small, and the cost is reduced because each material and device are inexpensive. Further, since the number of processes is small and each process is simple, the throughput is good. further,
These steps are possible if liquefaction can be achieved regardless of the chemical properties of the optical material.

The patterning method by coating as described above seems to be easily implemented at first glance. However, when applying an optical material by an ink jet method, the optical material must be diluted several tens of times with a solvent, so its fluidity is high, and after application, the application position is completely solidified. It has proved difficult to hold on.

That is, the patterning accuracy is poor due to the fluidity of the liquid optical material. For example, when the optical material applied to a certain pixel flows out to an adjacent pixel, the optical characteristics of the pixel are deteriorated. In addition, since the application area varies for each pixel, the application thickness varies, and the optical characteristics of the optical material also vary.

Such a problem is noticeable in a light emitting material for an EL display element which is liquid when applied and is solidified later, but liquid crystal which is liquid when applied and thereafter is selectively formed on a display substrate. This is also a problem that occurs in the same manner when applied to the coating.

The present invention has been made paying attention to such an unsolved problem of the conventional technique, and maintains the characteristics such as low cost, high throughput, and high degree of freedom of optical materials while maintaining the liquid state. It is an object of the present invention to provide a method of manufacturing a display element that can reliably arrange the optical material at a predetermined position.

An optical device manufacturing method of the present invention is an optical device manufacturing method having a configuration in which an optical material is selectively disposed at a predetermined position on a substrate. It comprises a step of applying a charged liquid optical material.
The method for manufacturing an optical device according to the present invention further comprises a step of forming an interlayer insulating film so as to surround a predetermined position on the substrate in the method for manufacturing an optical device , wherein the potential distribution is determined by the interlayer insulation. A repulsive force is set between the film and the liquid optical material.
The method for manufacturing an optical device according to the present invention further includes the step of providing a first electrode at a predetermined position on the substrate in the method for manufacturing an optical device , wherein the potential distribution includes the first electrode and the first electrode. It is characterized in that it is set so that an attractive force acts between the liquid optical material.
The optical device manufacturing method of the present invention is the optical device manufacturing method described above, further comprising a plurality of scanning lines, a plurality of signal lines, and a plurality of common power supply lines, wherein the plurality of signal lines and the plurality of signal lines are provided. A potential distribution is formed by applying a predetermined potential to the common power supply line and sequentially scanning each of the plurality of scanning lines.
According to the optical device manufacturing method of the present invention, in the optical device manufacturing method, a plurality of pixels are provided at intersections of the plurality of scanning lines and the signal lines, and each of the plurality of pixels includes: holds the pixel electrode as the first electrode, and a switching thin film transistor in which the scanning signal from one of the plurality of scanning lines is supplied to the gate electrode, an image signal supplied from the signal line through the switching TFTs A storage capacitor; and a current thin film transistor to which an image signal stored by the storage capacitor is supplied to a gate electrode.
According to another aspect of the invention, there is provided a method of manufacturing an optical device according to the above-described method of manufacturing an optical device, the step of forming a plurality of first bus wires as the first electrode, and a direction orthogonal to the plurality of first bus wires. Forming a plurality of second bus wirings arranged on the first and second bus lines, wherein the potential distribution is formed by the plurality of first bus wirings.

In the method for manufacturing the display element, it is preferable that the step is formed so that the predetermined position is lower than the periphery of the predetermined position.

In the method for manufacturing the display element, the light emitting material or the hole injection layer may be arranged corresponding to the predetermined position by applying a liquid material. An ink jet method can be used for applying the liquid material.

In the manufacturing method of the display element, a step of further forming a data line, a step of forming a signal line,
Forming a switching element corresponding to the predetermined position.
Preferably, the method for manufacturing a display element includes a step of improving lyophilicity with respect to the liquid material at the predetermined position as compared with the periphery of the predetermined position.

In the display element manufacturing method described above, it is possible to improve the lyophilicity of the liquid material at the predetermined position with respect to the liquid at the predetermined position using plasma irradiation before applying the liquid material. .

The plasma irradiation can be performed using one gas selected from O ₂ , CF ₄ , and Ar as a plasma raw material.

Further, the plasma irradiation may be performed using a mixed gas composed of at least two gases selected from O ₂ , CF ₄ , and Ar.

The matrix type display element of the present invention has a configuration in which an optical material is selectively disposed at a predetermined position on a display substrate, and the optical material is in a liquid state when applied at least at the predetermined position. An element having a step for selectively applying the optical material at a boundary portion between the predetermined position and its periphery.

Since the matrix type display element of the present invention has the steps as described above, even when the optical material is in a liquid state when applied, it can be selectively disposed at a predetermined position. That is, the matrix type display element of the present invention is a high performance matrix type display element in which an optical material is accurately arranged at a predetermined position.

The manufacturing method of the matrix type display device of the present invention has a configuration in which an optical material is selectively disposed at a predetermined position on a display substrate, and the optical material is in a liquid state at least when applied to the predetermined position. A method of manufacturing a matrix type display device, wherein a step for applying the liquid optical material is formed at a boundary portion between the predetermined position above the display substrate and its periphery, and the step is used. And applying the liquid optical material to the predetermined position.

According to the manufacturing method of the matrix type display element described above, since the step is formed before the liquid optical material is applied, the step prevents the liquid optical material applied at a predetermined position from spreading around. be able to. As a result, for example, low cost,
Patterning accuracy can be improved while maintaining characteristics such as high throughput and a high degree of freedom of optical materials.

In the manufacturing method of the matrix type display element, the step is provided, the concave shape is formed such that the predetermined position is lower than the periphery thereof, and the surface of the display substrate on which the liquid optical material is applied You may make it apply | coat the said liquid optical material to the said predetermined position toward the top.

In this way, when the surface of the display substrate to which the optical material is applied is directed upward, the concave portion formed by the step is also directed upward. When a liquid optical material is applied to the inside of the concave portion, the optical material accumulates in the concave portion due to gravity, and the applied liquid optical material is free from gravity and surface tension unless the amount is extremely large. Therefore, there is no problem even if the optical material is solidified by drying in this state, for example, and high-precision patterning can be performed.

On the contrary, it is also possible to provide a convex shape in which the step is provided and the predetermined position is higher than the surrounding area. The liquid optical material may be applied to the predetermined position with the surface of the display substrate on which the liquid optical material is applied facing down.

By doing so, when the surface of the display substrate to which the optical material is applied is directed downward, the convex portion formed by the step also faces downward. And when a liquid optical material is applied to the convex part, the optical material comes to gather on the convex part by surface tension,
Since the applied liquid optical material can be accumulated on the convex portion by surface tension unless it is extremely large amount, there is no problem even if the optical material is solidified by drying in this state, for example. Accurate patterning can be performed.

The second matrix type display element manufacturing method of the present invention has a configuration in which an optical material is selectively disposed at a predetermined position on a display substrate, and the optical material is applied at least at the predetermined position. A liquid crystal matrix display device manufacturing method comprising: a step of forming a plurality of first bus wirings on the display substrate; and a step for applying the liquid optical material on the display substrate. Forming at a boundary portion between the predetermined position and the periphery thereof, applying the liquid optical material to the predetermined position using the step, and a plurality of second portions intersecting the first bus wiring. Forming the bus wiring so as to cover the optical material.

In this way, since the step is formed before the liquid optical material is applied, it is possible to prevent the liquid optical material applied at a predetermined position from spreading to the periphery. As a result, it is possible to improve patterning accuracy while maintaining characteristics such as low cost, high throughput, and high degree of freedom of optical materials.

A third matrix type display element manufacturing method of the present invention has a configuration in which an optical material is selectively disposed at a predetermined position on a display substrate, and the optical material is applied at least at the predetermined position. A liquid crystal matrix display device manufacturing method comprising: a step of forming a plurality of first bus wirings above the display substrate; and a step for applying the liquid optical material. A step of forming the boundary between the predetermined position on the periphery and the periphery thereof, a step of applying the liquid optical material to the predetermined position using the step, and a release layer on the release substrate A step of forming a plurality of second bus wirings, and a structure peeled from the peeling layer on the peeling substrate on the display substrate coated with the optical material, the first bus wiring and the first Transfer so that 2 bus wirings intersect And it includes that and step.

In this way, since the step is formed before the liquid optical material is applied, it is possible to prevent the liquid optical material applied at a predetermined position from spreading to the periphery. As a result, it is possible to improve patterning accuracy while maintaining characteristics such as low cost, high throughput, and high degree of freedom of optical materials. In addition, after the optical material is disposed, the second bus wiring layer is formed on the upper surface, and the etching process is not performed. Can be reduced.

The fourth matrix type display element manufacturing method of the present invention has a configuration in which an optical material is selectively disposed at a predetermined position on a display substrate, and the optical material is applied at least at the predetermined position. A liquid crystal matrix display device manufacturing method, comprising: a wiring including a plurality of scanning lines and signal lines on the display substrate; a pixel electrode corresponding to the predetermined position; and the wiring according to a state of the wiring. A step of forming a switching element for controlling the state of the pixel electrode, and a step for applying the liquid optical material is formed at a boundary portion between the predetermined position on the display substrate and the periphery thereof. And a step of applying the liquid optical material to the predetermined position using the step.

In this way, since the step is formed before the liquid optical material is applied, it is possible to prevent the liquid optical material applied at a predetermined position from spreading to the periphery. As a result, it is possible to improve patterning accuracy while maintaining characteristics such as low cost, high throughput, and high degree of freedom of optical materials.

The fifth matrix type display element manufacturing method of the present invention has a configuration in which an optical material is selectively disposed at a predetermined position on a display substrate, and the optical material is applied at least at the predetermined position. A liquid crystal matrix display device manufacturing method, wherein a step for applying the liquid optical material is formed at a boundary portion between the predetermined position on the display substrate and its periphery, and the step A step of applying the liquid optical material to the predetermined position using the substrate, a wiring including a plurality of scanning lines and signal lines on the peeling substrate via a peeling layer, and a pixel corresponding to the predetermined position A step of forming an electrode and a switching element for controlling the state of the pixel electrode according to the state of the wiring; and the peeling on the peeling substrate on the display substrate coated with the optical material. Peeled from the layer It includes a step of transferring the granulation, the.

In this way, since the step is formed before the liquid optical material is applied, it is possible to prevent the liquid optical material applied at a predetermined position from spreading to the periphery. As a result, it is possible to improve patterning accuracy while maintaining characteristics such as low cost, high throughput, and high degree of freedom of optical materials. Further, after the optical material is disposed, the wiring layer and the pixel electrode layer are not formed on the upper surface of the optical material, and the etching process is not performed. It is possible to reduce damage and damage caused by application of an optical material to a scanning line, a signal line, a pixel electrode, a switching element, or the like.

In the manufacturing method of the matrix type display element, the step is a concave step formed using the first bus wiring, and the predetermined position is lower than the periphery thereof, and the liquid level In the step of applying the optical material, the liquid optical material may be applied to the predetermined position with the surface of the display substrate on which the liquid optical material is applied facing upward.

In the manufacturing method of the matrix type display element, since the step is formed before the liquid optical material is applied, the step prevents the liquid optical material applied at a predetermined position from spreading around. it can. As a result, it is possible to improve patterning accuracy while maintaining characteristics such as low cost, high throughput, and high degree of freedom of optical materials. Furthermore, if the step is formed using the first bus wiring, part or all of the process of forming the first bus wiring also serves as the process of forming the step, thereby suppressing an increase in the number of processes. it can.

In addition, if a step is formed using a wiring such as a scanning line, a signal line, or a common power supply line, part or all of the step of forming the wiring also serves as the step of forming the step. An increase in the number of processes can be suppressed.

In the manufacturing method of the matrix type display element, the predetermined position is a convex step which is higher than the periphery thereof, and in the step of applying the liquid optical material, the liquid of the display substrate The liquid optical material may be applied to the predetermined position with the surface to which the optical material is applied facing down. In this case, the pixel electrode can be used to form the step.

In this way, as a result of forming the step using the pixel electrode, part or all of the step of forming the pixel electrode also serves as the step of forming the step, so that an increase in the number of steps can be suppressed.

The method for manufacturing a matrix display device includes a step of forming an interlayer insulating film, wherein the step is formed using the interlayer insulating film, and the predetermined position is lower than the surroundings. In the step of applying the liquid optical material, which is a concave step, the surface of the display substrate to which the liquid optical material is applied faces upward,
The liquid optical material may be applied to the predetermined position.

In this way, as a result of forming the step using the interlayer insulating film, part or all of the step of forming the interlayer insulating film also serves as the step of forming the step. Can be suppressed.

In the manufacturing method of the matrix type display element, further comprising a step of forming a light shielding layer, wherein the step is formed using the light shielding layer, and the concave position in which the predetermined position is lower than its surroundings. In the step of applying the liquid optical material, the liquid optical material is applied to the predetermined position with the surface of the display substrate to which the liquid optical material is applied facing upward. May be.

By doing so, as a result of forming the step using the light shielding layer, part or all of the step of forming the light shielding layer also serves as the step of forming the step.
An increase in the number of processes can be suppressed.

In the manufacturing method of the matrix display element, the step of forming the step may be formed by selectively removing the step after applying a liquid material. As the liquid material, for example, a resist or the like can be applied. When a resist is applied, a resist film having an appropriate thickness is formed by spin-coating the resist on the display substrate surface, and the resist film is exposed and exposed. Etching forms a recess corresponding to a predetermined position, thereby forming a step.

By doing so, it is possible to simplify the step of forming the step, and at the same time, it is possible to easily form a step having a large difference in height while reducing damage to the base material.

In the manufacturing method of the matrix type display element, the step of forming the step includes forming a step on the peeling substrate via a peeling layer, and forming a structure separated from the peeling layer on the peeling substrate as a display substrate You may make it transfer on the top.

By doing so, the step formed separately on the release substrate is transferred, so that the step for forming the step can be simplified, and at the same time, the damage to the base material is reduced and the height is reduced. A step with a large difference can be easily formed.

In the manufacturing method of the matrix type display element, the height dr of the step may satisfy the following formula (1).

da <dr (1)
Here, da is the coating thickness per time of the liquid optical material.

In this way, it is possible to suppress the optical material from flowing out of the predetermined position beyond the concave step without depending on the surface tension of the liquid optical material.

In the above method for manufacturing a matrix display element, the following expression (2) may be satisfied.

Vd / (db · r)> Et (2)
Where Vd is the driving voltage applied to the optical material, db is the sum of the coating thicknesses of the liquid optical material, r is the concentration of the liquid optical material, Et is a change in the optical characteristics of the optical material. The minimum electric field strength (threshold electric field strength).

Thereby, the relationship between the coating thickness and the driving voltage is clarified, and it is compensated that the electro-optic effect of the optical material is exhibited.

In the method for manufacturing a matrix display element, the height dr of the step may satisfy the following expression (3).

df = dr (3)
Where df is the thickness of the optical material when completed.

By doing so, the flatness between the step and the optical material at the time of completion is secured,
Uniformity of the optical property change of the optical material and prevention of short circuit are possible.

In the manufacturing method of the matrix display element, the thickness df at the time of completion is:
You may make it satisfy | fill the following (4) Formula.

Vd / df> Et (4)
Here, Vd is a driving voltage applied to the optical material, and Et is the minimum electric field strength (threshold electric field strength) at which the optical characteristic change of the optical material appears.

By doing so, the relationship between the coating thickness and the driving voltage is clarified, and it is compensated that the electro-optic effect of the optical material is exhibited.

According to a sixth method of manufacturing a matrix display element of the present invention, the step of making the lyophilic property of the predetermined position on the display substrate relatively stronger than the surrounding lyophilic property, and the liquid at the predetermined position. And a step of applying the optical material.

By doing so, since the lyophilic property at a predetermined position is strengthened before the liquid optical material is applied, the liquid optical material applied at the predetermined position has a predetermined position rather than its surroundings. If the difference in lyophilicity between the predetermined position and the surrounding area is sufficiently large, the liquid optical material applied to the predetermined position does not spread around the surrounding area.

As a result, it is possible to improve patterning accuracy while maintaining characteristics such as low cost, high throughput, and high degree of freedom of optical materials.

As a step of making the lyophilic property at a predetermined position on the display substrate relatively stronger than the lyophilic property of the surrounding area, the lyophilic property at the predetermined position is strengthened or the lyophobic property at the predetermined position is increased. It may be possible to strengthen or do both.

A seventh matrix type display element manufacturing method of the present invention has a configuration in which an optical material is selectively disposed at a predetermined position on a display substrate, and the optical material is applied at least at the predetermined position. A liquid crystal matrix display device manufacturing method comprising: forming a plurality of first bus wirings on the display substrate; and lyophilicity at the predetermined position on the display substrate. Covering the optical material with a step of making the liquid material relatively stronger than a liquid, a step of applying the liquid optical material at the predetermined position, and a plurality of second bus wirings intersecting the first bus wiring And a step of forming the same.

The eighth matrix-type display element manufacturing method of the present invention has a configuration in which an optical material is selectively disposed at a predetermined position on a display substrate, and the optical material is applied at least at the predetermined position. A liquid crystal matrix display device manufacturing method comprising: forming a plurality of first bus wirings on the display substrate; and lyophilicity at the predetermined position on the display substrate. A step of relatively strengthening the liquid, a step of applying the liquid optical material at the predetermined position, and a step of forming a plurality of second bus wirings on the release substrate via a release layer. The structure peeled from the peeling layer on the peeling substrate is transferred onto the display substrate coated with the optical material so that the first bus wiring and the second bus wiring cross each other. And a process.

By doing so, for example, after the optical material is arranged, the second bus wiring layer is formed on the upper surface and the step of etching it is not performed. It is possible to reduce damage caused by subsequent processes.

The ninth matrix type display element manufacturing method of the present invention has a configuration in which an optical material is selectively disposed at a predetermined position on a display substrate, and the optical material is applied at least at the predetermined position. A liquid crystal matrix display device manufacturing method, comprising: a wiring including a plurality of scanning lines and signal lines on the display substrate; a pixel electrode corresponding to the predetermined position; and the wiring according to a state of the wiring. A switching element for controlling a state of the pixel electrode, a step of making the lyophilic property of the predetermined position on the display substrate relatively stronger than a surrounding lyophilic property, and the predetermined device Applying the liquid optical material at a position.

The tenth matrix type display element manufacturing method of the present invention has a configuration in which an optical material is selectively disposed at a predetermined position on a display substrate, and the optical material is applied at least at the predetermined position. A liquid crystal matrix display device manufacturing method comprising:
A step of making the lyophilic property of the predetermined position on the display substrate relatively stronger than a surrounding lyophilic property, a step of applying the liquid optical material to the predetermined position, and a peeling substrate, A wiring including a plurality of scanning lines and signal lines, a pixel electrode corresponding to the predetermined position, and a switching element for controlling the state of the pixel electrode according to the state of the wiring through a peeling layer. A step of forming, a step of transferring a structure peeled from the release layer on the release substrate onto a display substrate coated with the optical material,
It has.

In this way, for example, after the optical material is disposed, the wiring layer and the pixel electrode layer are not formed on the upper surface and the process of etching them is not performed. Damage to the underlying material due to subsequent processes, scanning lines,
It is possible to reduce damage caused by application of an optical material to a signal line, a pixel electrode, a switching element, or the like.

In the manufacturing method of the matrix display element, the first on the display substrate.
By forming a distribution with strong liquid repellency along the bus wiring, the lyophilic property at the predetermined position on the display substrate may be made relatively stronger than the surrounding lyophilic property.

In this way, as a result of forming a strong lyophilic distribution along the first bus wiring, a part or all of the process of forming the first bus wiring has the lyophilic property at the predetermined position. Because it also serves as a process that makes it relatively stronger than the surrounding lyophilicity,
An increase in the number of processes can be suppressed.

Further, in the above-described method for manufacturing a matrix type display element, by forming a strong liquid repellency distribution along the wiring on the display substrate, the lyophilicity at the predetermined position on the display substrate It is also possible to make it relatively stronger than the lyophilic property.

In this way, part or all of the step of forming the wiring also serves as a step of making the lyophilicity of the predetermined position relatively stronger than the surrounding lyophilic property. Increase can be suppressed.

In the above method for manufacturing a matrix display element, the lyophilicity of the predetermined position on the display substrate is made more lyophilic than the surrounding lyophilicity by strengthening the lyophilicity of the surface of the pixel electrode on the display substrate. May be made relatively strong.

In this way, as a result of strengthening the lyophilicity of the pixel electrode surface, a part or all of the steps of forming the pixel electrode may make the lyophilicity at the predetermined position relative to the surrounding lyophilicity. Therefore, the increase in the number of steps can be suppressed.

In the manufacturing method of the matrix type display element, the method includes a step of forming an interlayer insulating film, and forming a strongly liquid-repellent distribution along the interlayer insulating film on the display substrate, thereby You may make it make the lyophilicity of the said predetermined position relatively stronger than the lyophilicity of the circumference | surroundings.

In this way, as a result of forming a strong lyophilic distribution along the interlayer insulating film, a part or all of the step of forming the interlayer insulating film may be performed by setting the lyophilicity at the predetermined position to the surrounding lyophilicity. Since it also serves as a step of making it stronger than the liquidity, an increase in the number of steps can be suppressed.

The method for manufacturing a matrix display device includes a step of forming an interlayer insulating film so that the surface of the pixel electrode is exposed, and the liquid optical material is applied when forming the interlayer insulating film. For the predetermined position on the display substrate by forming a step for the surface of the pixel electrode at a boundary portion between the exposed portion and the periphery thereof to enhance the liquid repellency of the surface of the interlayer insulating film. The lyophilic property may be relatively stronger than the surrounding lyophilic property.

In this way, before the liquid optical material is applied, a concave step is formed by the interlayer insulating film, and the liquid repellency of the surface of the interlayer insulating film is enhanced, so that the parent at a predetermined position can be obtained. The liquidity is relatively stronger than the surrounding lyophilicity. For this reason, the liquid optical material applied at a predetermined position spreads around.
It can be blocked more reliably. As a result, it is possible to further improve the patterning accuracy while maintaining characteristics such as low cost, high throughput, and high degree of freedom of optical materials.

In the manufacturing method of the matrix type display element, the method includes a step of forming a light shielding layer, and forming a predetermined distribution on the display substrate by forming a strong liquid repellency distribution along the light shielding layer on the display substrate. You may make it make the position lyophilic relatively stronger than the surrounding lyophilicity.

In this way, as a result of forming a strong lyophilic distribution along the light-shielding layer, part or all of the process of forming the light-shielding layer may cause the lyophilicity at the predetermined position to be lyophilic in the surrounding area. Therefore, the increase in the number of steps can be suppressed.

In the above method for manufacturing a matrix display device, the difference in lyophilicity between the predetermined position and its surroundings is increased by irradiating with ultraviolet rays or irradiating plasma of O ₂ , CF ₃ , Ar, or the like. May be.

In this way, for example, the liquid repellency of the surface of the interlayer insulating film can be easily increased.

The method for manufacturing a matrix type display element may include a step of making the lyophilic property at the predetermined position on the display substrate relatively stronger than the lyophilic property of the surrounding area.

The method for manufacturing a matrix display element may further include a step of forming a step for applying the liquid optical material at a boundary portion between the predetermined position on the display substrate and the periphery thereof. .

By doing so, a predetermined step is formed before the liquid optical material is applied, and the lyophilic property at a predetermined position is relatively stronger than the surrounding lyophilic property. It can prevent more reliably that the liquid optical material apply | coated to the predetermined position spreads around. As a result, it is possible to further improve the patterning accuracy while maintaining characteristics such as low cost, high throughput, and high degree of freedom of optical materials.

The eleventh matrix-type display element manufacturing method of the present invention has a configuration in which an optical material is selectively disposed at a predetermined position on a display substrate, and the optical material is applied at least at the predetermined position. A liquid crystal matrix display device manufacturing method comprising:
A step of forming a potential distribution on the display substrate so that the predetermined position and the surrounding thereof have different potentials, and selectively applying the liquid optical material to the predetermined position using the potential distribution. And a process.

In this way, since the potential distribution is formed before the liquid optical material is applied, the potential distribution can prevent the liquid optical material applied at a predetermined position from spreading to the surroundings. As a result, it is possible to improve patterning accuracy while maintaining characteristics such as low cost, high throughput, and high degree of freedom of optical materials.

A twelfth matrix type display element manufacturing method of the present invention has a configuration in which an optical material is selectively disposed at a predetermined position on a display substrate, and the optical material is applied at least at the predetermined position. In the method for manufacturing a liquid crystal matrix display element,
A step of forming a potential distribution on the display substrate so that the predetermined position and the periphery thereof have different potentials, and the liquid optical material at a potential at which repulsive force is generated between the predetermined position and the periphery of the predetermined position. And a step of applying to the predetermined position after charging.

By doing so, since repulsive force is generated between the applied liquid optical material and the periphery of the predetermined position, it is possible to prevent the liquid optical material applied to the predetermined position from spreading to the periphery. . As a result, it is possible to improve patterning accuracy while maintaining characteristics such as low cost, high throughput, and high degree of freedom of optical materials.

A thirteenth matrix type display element manufacturing method of the present invention has a configuration in which an optical material is selectively disposed at a predetermined position on a display substrate, and the optical material is applied at least at the predetermined position. A liquid crystal matrix display device manufacturing method comprising:
Forming a plurality of first bus wirings on the display substrate, forming a potential distribution on the display substrate so that the predetermined position and its surroundings have different potentials, and the liquid state A step of charging the optical material to a potential at which repulsive force is generated around the predetermined position and then applying the optical material to the predetermined position, and a plurality of second bus wirings intersecting the first bus wiring. And a step of covering the optical material.

A fourteenth matrix type display element manufacturing method of the present invention has a configuration in which an optical material is selectively disposed at a predetermined position on a display substrate, and the optical material is applied at least at the predetermined position. In the method for manufacturing a liquid crystal matrix display element,
Forming a plurality of first bus wirings on the display substrate, forming a potential distribution on the display substrate so that the predetermined position and its surroundings have different potentials, and the liquid state A step of charging the optical material to a potential at which repulsive force is generated around the predetermined position and then applying the optical material to the predetermined position, and a plurality of second buses on the peeling substrate via a peeling layer. Forming a wiring; and a structure in which the first bus wiring and the second bus wiring are separated from the peeling layer on the peeling substrate on the display substrate coated with the optical material. And a step of transferring so as to intersect.

In this way, after the optical material is disposed, the second bus wiring layer is formed on the upper surface and the step of etching the layer is not performed. It is possible to reduce damage caused by subsequent processes.

The fifteenth matrix type display element manufacturing method of the present invention has a configuration in which an optical material is selectively disposed at a predetermined position on a display substrate, and the optical material is applied at least at the predetermined position. A liquid crystal matrix display device manufacturing method comprising:
A wiring including a plurality of scanning lines and signal lines on the display substrate, a pixel electrode corresponding to the predetermined position, and a switching element for controlling the state of the pixel electrode in accordance with the state of the wiring. A step of forming a potential distribution on the display substrate so that the potential at the predetermined position and the periphery thereof are different, and a repulsive force between the liquid optical material and the periphery of the predetermined position. And charging to the predetermined position after being charged to a potential at which is generated.

A sixteenth matrix type display element manufacturing method of the present invention has a configuration in which an optical material is selectively disposed at a predetermined position on a display substrate, and the optical material is applied at least at the predetermined position. A liquid crystal matrix display device manufacturing method comprising:
A step of forming a potential distribution on the display substrate so that the predetermined position and the periphery thereof have different potentials, and the liquid optical material at a potential at which repulsive force is generated between the predetermined position and the periphery of the predetermined position. A process of applying to the predetermined position after charging, a wiring including a plurality of scanning lines and signal lines on a peeling substrate via a peeling layer, a pixel electrode corresponding to the predetermined position, and the wiring A step of forming a switching element for controlling the state of the pixel electrode according to the state of the substrate, and peeling from the release layer on the release substrate on the display substrate coated with the optical material. Transferring the structure;
It has.

In this way, after the optical material is disposed, a wiring layer and a pixel electrode layer are formed on the upper surface of the optical material, and the etching process is not performed. Damage due to subsequent processes, scanning lines, signal lines,
Damage caused by application of optical material to the pixel electrode or switching element, etc.
It becomes possible to reduce.

In the method for manufacturing a matrix display device, the potential distribution may be formed so that at least the periphery of the predetermined position on the display substrate is charged.

By doing so, the repulsive force can be reliably generated by charging the optical material in a shape.

In the method for manufacturing a matrix display element, the potential distribution may be formed by applying a voltage to the first bus wiring.

In the method for manufacturing a matrix display element, the potential distribution may be formed by applying a voltage to the wiring.

In the method for manufacturing a matrix display element, the potential distribution is
You may make it form by applying a voltage to the said pixel electrode.

In the method of manufacturing a matrix display element, the potential distribution is applied by sequentially applying a voltage to the scanning lines, simultaneously applying a potential to the signal lines, and applying a voltage to the pixel electrodes via the switching elements. You may make it form by.

The method for manufacturing a matrix display element may include a step of forming a light shielding layer, and the potential distribution may be formed by applying a voltage to the light shielding layer.

In this way, the potential distribution is formed using the configuration of the matrix display element, so that an increase in the number of steps can be suppressed.

In the above-described method for manufacturing a matrix display element, the potential distribution may be formed so that the predetermined position and its surroundings have opposite polarities.

By doing so, an attractive force is generated between the liquid optical material and the predetermined position, and a repulsive force is generated between the liquid optical material and the periphery of the predetermined position. It is easy to accumulate, and the patterning accuracy is further improved.

For example, an inorganic or organic light-emitting material can be applied as the optical material in the method for manufacturing a matrix display element. As a luminescent material,
EL (Electroluminescense) is preferred. To make it a liquid optical material,
A solution may be obtained by dissolving in an appropriate solvent.

In addition, as the optical material in the method for manufacturing a matrix display element, for example, a liquid crystal material can be used.

In the method for manufacturing a matrix display element, the switching element is
You may make it form with an amorphous silicon, the polycrystalline silicon formed by the high temperature process of 600 degreeC or more, or the polycrystalline silicon formed by the low temperature process of 600 degrees C or less.

By doing so, it becomes possible to improve the patterning accuracy of the optical material. In particular, when polycrystalline silicon formed by a low temperature process is used, both cost reduction by using a glass substrate and high performance by high mobility can be achieved.

  Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.

(1) First Embodiment FIGS. 1 to 5 are views showing a first embodiment of the present invention. This embodiment includes a matrix type display element according to the present invention and its matrix display device. The manufacturing method is applied to an active matrix display device using an EL display element. More specifically, an example is shown in which a light emitting material as an optical material is applied using a scanning line, a signal line, and a common power supply line as wiring.

FIG. 1 is a circuit diagram showing a part of the display device 1 according to the present embodiment. The display device 1 includes a plurality of scanning lines 131 and these scanning lines 1 on a transparent display substrate.
A plurality of signal lines 132 extending in a direction intersecting with the signal lines 31 and the signal lines 132
A plurality of common power supply lines 133 extending in parallel with each other, and a pixel region element 1A is provided at each intersection of the scanning lines 131 and the signal lines 132.

For the signal line 132, a data side driving circuit 3 including a shift register, a level shifter, a video line, and an analog switch is provided. Scan line 1
31 is a scanning side drive circuit 4 having a shift register and a level shifter.
Is provided. Further, in each pixel region 1A, a switching thin film transistor 142 to which a scanning signal is supplied to the gate electrode via the scanning line 131 and an image signal supplied from the signal line line 132 via the switching thin film transistor 142 are supplied. A holding capacitor cap to hold, a current thin film transistor 143 to which an image signal held by the holding capacitor cap is supplied to the gate electrode, and a common supply line when electrically connected to the common power supply line 133 through the current thin film transistor 143 A pixel electrode 141 into which a drive current flows from the electric wire 133 and a light emitting element 140 sandwiched between the pixel electrode 141 and the reflective electrode 154 are provided.

With this configuration, when the scanning line 131 is driven and the switching thin film transistor 142 is turned on, the potential of the signal line 132 at that time is held in the holding capacitor cap, and the current thin film transistor 143 has a current corresponding to the state of the holding capacitor cap. The on / off state is determined. Then, current flows from the common power supply line 133 to the pixel electrode 141 through the channel of the current thin film transistor 143, and further, the light emitting element 1
Since a current flows through the reflective electrode 154 through 40, the light emitting element 140 emits light according to the amount of current flowing through the reflective electrode 154.

Here, the planar structure of each pixel region 1A is a pixel electrode 141 having a rectangular planar shape as shown in FIG. 2 which is an enlarged plan view with the reflective electrode and the light emitting element removed.
These four sides are surrounded by a signal line 132, a common power supply line 133, a scanning line 131, and other pixel electrode scanning lines (not shown).

3 to 5 are cross-sectional views sequentially showing the manufacturing process of the pixel region 1A.
It corresponds to a cross section along line AA in the figure. Hereinafter, the manufacturing process of the pixel region 1A will be described with reference to FIGS.

First, as shown in FIG. 3 (a), a transparent display substrate 121 has a thickness of about 2000 by plasma CVD using TEOS (tetraethoxysilane), oxygen gas, or the like as a source gas, if necessary. A base protective film (not shown) made of a silicon oxide film of ˜5000 Å is formed. Next, the temperature of the display substrate 121 is set to about 350 ° C., and the semiconductor film 200 made of an amorphous silicon film having a thickness of about 300 to 700 Å is formed on the surface of the base protective film by plasma CVD. Next, a semiconductor film 200 made of an amorphous silicon film
Then, a crystallization process such as laser annealing or solid phase growth is performed to crystallize the semiconductor film 200 into a polysilicon film. In the laser annealing method, for example, a line beam having a beam length of 400 mm is used with an excimer laser, and the output intensity thereof is, for example, 200 mJ / cm ² . The line beam is scanned so that a portion corresponding to 90% of the peak value of the laser intensity in the short dimension direction overlaps each region.

Next, as shown in FIG. 3B, the semiconductor film 200 is patterned to form an island-shaped semiconductor film 210, and TEOS (tetraethoxysilane) is formed on the surface.
About 600 to 15 in thickness by plasma CVD using oxygen or oxygen gas as raw material gas
Gate insulating film 22 made of 00 angstrom silicon oxide film or nitride film
0 is formed. The semiconductor film 210 serves as a channel region and a source / drain region of the current thin film transistor 143. However, semiconductor films serving as a channel region and a source / drain region of the switching thin film transistor 142 are also formed at different cross-sectional positions. . That is, in the manufacturing process shown in FIGS. 3 to 5, two types of transistors 142 and 143 are formed at the same time. However, since they are manufactured in the same procedure, only the current thin film transistor 143 will be described in the following description. Explain, switching thin film transistor 142
Description of is omitted.

Next, as shown in FIG. 3 (c), aluminum, tantalum, molybdenum,
A conductive film made of a metal film such as titanium or tungsten is formed by sputtering and then patterned to form a gate electrode 143A.

In this state, high-concentration phosphorus ions are implanted into the silicon thin film 210 in a self-aligned manner with respect to the gate electrode 143A.
Form. Note that a portion where impurities are not introduced becomes a channel region 143c.

Next, as shown in FIG. 3D, after the interlayer insulating film 230 is formed, contact holes 232 and 234 are formed, and the relay electrodes 236 and 238 are embedded in the contact holes 232 and 234.

Next, as shown in FIG. 3 (e), the signal line 132,
A common power supply line 133 and a scanning line (not shown in FIG. 3) are formed. At this time,
Each wiring of the signal line 132, the common power supply line 133, and the scanning line is formed to be sufficiently thick without being caught by a necessary thickness as the wiring.

Specifically, each wiring is formed to a thickness of about 1 to 2 μm. Here, the relay electrode 23
8 and each wiring may be formed in the same process. At this time, the relay electrode 236 is formed of an ITO film described later.

Then, an interlayer insulating film 240 is formed so as to cover the upper surface of each wiring, and the relay electrode 2
A contact hole 242 is formed at a position corresponding to 36, an ITO film is formed so as to be embedded in the contact hole 242, and the ITO film is patterned to form a signal line 132, a common power supply line 133, and a scanning line. A pixel electrode 141 electrically connected to the source / drain region 143a is formed at a predetermined position surrounded.

Here, in FIG. 3 (e), a portion sandwiched between the signal line 132 and the common power supply line 133 corresponds to a predetermined position where the optical material is selectively disposed. And
A step 111 is formed by the signal line 132 and the common power supply line 133 between the predetermined position and the periphery thereof. Specifically, a concave step 111 is formed in which the predetermined position is lower than the surrounding area.

Next, as shown in FIG. 4 (a), a liquid (solvent) for forming a hole injection layer corresponding to the lower layer portion of the light emitting element 140 by the inkjet head method with the upper surface of the display substrate 121 facing upward. Optical material (precursor) dissolved in
114A is discharged, and this is selectively applied in a region (predetermined position) surrounded by the step 111. The specific contents of the ink jet system are not the gist of the present invention, and are therefore omitted (see, for example, Japanese Patent Application Laid-Open Nos. 56-13184 and 2-167751).

As a material for forming the hole injection layer, polyphenylene vinylene whose polymer precursor is polytetrahydrothiophenylphenylene, 1,1-bis- (4
-N, N-ditolylaminophenyl) cyclohexane, tris (8-hydroxyquinolinol) aluminum and the like.

At this time, the liquid precursor 114A tends to spread in the horizontal direction because of its high fluidity, but the step 111 is formed so as to surround the applied position.
Unless the coating amount of the liquid precursor 114A per one time is made extremely large, the liquid precursor 114A is prevented from spreading beyond the predetermined position beyond the step 111.

Next, as shown in FIG. 4 (b), the liquid precursor 1 is heated or irradiated with light.
The solvent of 14A is evaporated to form a solid thin hole injection layer 140 on the pixel electrode 141.
a is formed. Here, although depending on the concentration of the liquid precursor 114A, only the thin hole injection layer 140a is formed. Therefore, when a thicker hole injection layer 140a is required, the steps of FIGS. 4A and 4B are repeatedly performed as many times as necessary.
As shown in FIG. 3C, a sufficiently thick hole injection layer 140A is formed.

Next, as shown in FIG. 5 (a), the liquid (for the solvent) for forming the organic semiconductor film corresponding to the upper layer portion of the light emitting element 140 by the inkjet head method with the upper surface of the display substrate 121 facing upward. Dissolved solution-like optical material (organic fluorescent material) 114B is discharged, and this is selectively applied in the region (predetermined position) surrounded by the step 111.

Organic fluorescent materials include cyanopolyphenylene vinylene, polyphenylene vinylene, polyalkylphenylene, 2,3,6,7-tetrahydro-11-oxo-1H, 5H, 11H (1) benzopyrano [6,7,8-ij]- Quinolysin
10-carboxylic acid, 1,1-bis- (4-N, N-ditolylaminophenyl) cyclohexane, 2-13 ′, 4′-dihydroxyphenyl) -3,5,7-trihydroxy-1-benzopyrylium Perchlorate, tris (8-hydroxyquinolinol) aluminum, 2,3,6,7-tetrahydro-9-methyl-11
-Oxo-1H, 5H, 11H (1) benzopyrano [6,7,8-ij] -quinolidine, aromatic diamine derivative (TDP), oxydiazole dimer (OXD), oxydiazole derivative (PBD), distil Arylene derivatives (
DSA), quinolinol-based metal complexes, beryllium-benzoquinolinol complexes (B
ebq), triphenylamine derivative (MTDATA), distyryl derivative, pyrazoline dimer, rubrene, quinacridone, triazole derivative, polyphenylene, polyalkylfluorene, polyalkylthiophene, azomethine zinc complex, polyphyrin zinc complex, benzoxazole zinc complex, phenanthroline europium A complex etc. are mentioned.

At this time, since the liquid organic fluorescent material 114B has high fluidity, the liquid organic fluorescent material 114B also tends to spread in the horizontal direction. However, since the step 111 is formed so as to surround the applied position, the liquid organic fluorescent material 114B Unless the application amount of 114B per application is extremely large, the liquid organic fluorescent material 114B is prevented from spreading beyond the predetermined position 111 beyond the predetermined position.

Next, as shown in FIG. 5B, the solvent of the liquid organic fluorescent material 114B is evaporated by heating or light irradiation to form a solid thin organic semiconductor film 140b on the hole injection layer 140A. Here, although depending on the concentration of the liquid organic fluorescent material 114B, only the thin organic semiconductor film 140b is formed. Therefore, when a thicker organic semiconductor film 140b is required, the steps of FIGS. 5 (a) and 5 (b) are repeated as many times as necessary to obtain a sufficient thickness as shown in FIG. 5 (c). Organic semiconductor film 14
0B is formed. The light-emitting element 140 is configured by the hole injection layer 140A and the organic semiconductor film 140B. Finally, as shown in FIG.
The reflective electrode 154 is formed on the entire surface of the substrate or in a stripe shape.

As described above, in the present embodiment, the signal lines 132, the common wiring 133, and the like are formed so as to surround the treatment position where the light emitting element 140 is arranged from all sides, and the wirings are thicker than usual. Since the step 111 is formed and the liquid precursor 114A and the liquid organic fluorescent material 114B are selectively applied, there is an advantage that the patterning accuracy of the light emitting element 140 is high.

When the step 111 is formed, the reflective electrode 154 is formed on a relatively large surface, but if the thickness of the reflective electrode 154 is increased to some extent, problems such as disconnection may occur. The sex becomes extremely small.

In addition, since the step 111 is formed using the signal line 132, the common wiring 133, and the like, the number of new processes is not particularly increased, so that the manufacturing process is not significantly complicated.

In order to more reliably prevent the liquid precursor 114A and the liquid organic fluorescent material 114B from flowing out from the inside of the step 111 to the outside, the liquid precursor 11 is used.
Between the coating thickness da of 4A or the liquid organic fluorescent material 114B and the height dr of the step 111,
da <dr (1)
It is desirable to establish such a relationship.

However, when the liquid organic fluorescent material 114B is applied, the hole injection layer 14 has already been applied.
Since 0A is formed, it is necessary to consider the height dr of the step 111 by subtracting the portion of the hole injection layer 140A from the initial height.

In addition to satisfying the above equation (1), the drive voltage Vd applied to the organic semiconductor film 140B, the sum db of the coating thicknesses of the liquid organic fluorescent material 114B, and the liquid organic fluorescent material 114B Between the concentration r and the minimum electric field strength (threshold electric field strength) Et at which the optical characteristic change appears in the organic semiconductor film 140B,
Vd / (db · r)> Et (2)
If this relationship is established, the relationship between the coating thickness and the drive voltage is clarified, and it is compensated that the electro-optical effect of the organic semiconductor film 140B is developed.

On the other hand, the flatness between the step 111 and the light emitting element 140 can be secured, and the organic semiconductor film 14
In order to enable uniformity of 0B optical characteristic change and prevention of short circuit, the light emitting element 1
Between the completed thickness df of 40 and the height dr of the step 111,
df = dr (3)
This relationship should be established.

Furthermore, if the above equation (3) is satisfied and the following equation (4) is satisfied, the relationship between the thickness of the light emitting element 140 when completed and the driving voltage is clarified, and the electro-optic effect of the organic fluorescent material is improved. Expression is compensated.

Vd / df> Et (4)
However, df in this case is not the entire light emitting element 140 but the organic semiconductor film 14.
It is the thickness at the time of completion of 0B.

Note that the optical material forming the upper layer of the light emitting element 140 is an organic fluorescent material 114B.
The inorganic fluorescent material may be used.

Each transistor 142, 143 as a switching element is
It is desirable to form with polycrystalline silicon formed by the following low-temperature process, thereby achieving both cost reduction by using a glass substrate and performance enhancement by high mobility. The switching element may be formed of amorphous silicon or polycrystalline silicon formed by a high temperature process at 600 ° C. or higher.

In addition to the switching thin film transistor 142 and the current thin film transistor 143, a transistor may be provided, or the transistor may be driven by one transistor.

The step 111 may be formed by the first bus wiring of the passive matrix display element, the scanning line 131 of the active matrix display element, and the light shielding layer.

Note that the light-emitting element 140 may have the hole-injecting layer 140A omitted although the light-emitting efficiency (hole injection rate) is slightly reduced. Further, instead of the hole injection layer 140A, an electron injection layer may be formed between the organic semiconductor film 140B and the reflective electrode 154, or both the hole injection layer and the electron injection layer may be formed. Good.

Further, in the above-described embodiment, each light emitting element 14 is particularly considered with color display in mind.
Although the case where the entire 0 is selectively arranged has been described, for example, in the case of the display device 1 for monochromatic display, as shown in FIG.
You may form uniformly on the whole surface. However, even in this case, since the hole injection layer 140A must be selectively disposed at each predetermined position in order to prevent crosstalk, application using the step 111 is extremely effective.

(2) Second Embodiment FIG. 7 is a diagram showing a second embodiment of the present invention. In this embodiment, a matrix type display element and a method for manufacturing the same according to the present invention are described. The present invention is applied to a passive matrix display device using a display element.

FIG. 7A is a plan view showing an arrangement relationship between the plurality of first bus wirings 300 and the plurality of second bus wirings 310 arranged in a direction orthogonal thereto.
FIG. 7 (b) is a sectional view taken along line BB of FIG. 7 (a). In addition, the same code | symbol is attached | subjected to the structure similar to the said 1st Embodiment, and the overlapping description is abbreviate | omitted. Further, since the detailed manufacturing process and the like are the same as those in the first embodiment, illustration and description thereof are omitted.

That is, in the present embodiment, an insulating film 320 such as SiO ₂ is disposed so as to surround a predetermined position where the light emitting element 140 is disposed.
A step 111 is formed between the predetermined position and its periphery.

Even in such a configuration, the liquid precursor 1 is the same as in the first embodiment.
When 14A or the liquid organic fluorescent material 114B is selectively applied, there is an advantage that they can be prevented from flowing out and high-precision patterning can be performed.

(3) Third Embodiment FIG. 8 is a diagram showing a third embodiment of the present invention, and this embodiment also relates to the present invention in the same manner as the first embodiment. The matrix display element and the manufacturing method thereof are applied to an active matrix display device using an EL display element. More specifically, the step 111 is formed using the pixel electrode 141 so that high-precision patterning can be performed. In addition, the same code | symbol is attached | subjected to the structure similar to the said embodiment. FIG. 8 is a cross-sectional view showing the middle of the manufacturing process, and the front and rear thereof are substantially the same as those of the first embodiment, and therefore illustration and description thereof are omitted.

That is, in the present embodiment, the pixel electrode 141 is formed thicker than usual, thereby forming the step 111 between the periphery thereof. In other words, in the present embodiment, a convex step is formed in which the pixel electrode 141 to which an optical material is applied later is higher than the surrounding area.

As in the first embodiment, the inkjet head method is used.
A liquid (solution dissolved in a solvent) optical material (precursor) 114A for forming a hole injection layer corresponding to the lower layer portion of the light emitting element 140 is discharged and applied to the upper surface of the pixel electrode 141.

However, unlike the case of the first embodiment, the liquid precursor is displayed with the display substrate 121 turned upside down, that is, with the upper surface of the pixel electrode 141 to which the liquid precursor 114A is applied facing downward. The body 114A is applied.

Then, the liquid precursor 114 </ b> A is separated from the pixel electrode 14 by gravity and surface tension.
1 It collects on the upper surface and does not spread around it. Therefore, if solidification is performed by heating or light irradiation, a thin hole injection layer similar to that shown in FIG. 4B can be formed. If this process is repeated, a hole injection layer is formed. An organic semiconductor film is also formed by a similar method.

As described above, in this embodiment mode, it is possible to improve the patterning accuracy of the light emitting element by applying the liquid optical material using the convex step 111.

Note that the amount of liquid optical material accumulated on the upper surface of the pixel electrode 141 may be adjusted by using an inertial force such as a centrifugal force.

(4) Fourth Embodiment FIG. 9 is a diagram showing a fourth embodiment of the present invention, and this embodiment also relates to the present invention in the same manner as the first embodiment. The matrix display element and the manufacturing method thereof are applied to an active matrix display device using an EL display element. In addition, the same code | symbol is attached | subjected to the structure similar to the said embodiment. FIG. 9 is a cross-sectional view showing the middle of the manufacturing process. Since the front and rear thereof are substantially the same as those of the first embodiment, the illustration and description thereof are omitted.

That is, in this embodiment mode, first, the reflective electrode 154 is formed over the display substrate 121, and then the insulating film 320 is formed over the reflective electrode 154 so as to surround a predetermined position where the light emitting element 140 is disposed later. As a result, a concave step 111 is formed whose predetermined position is lower than its surroundings.

Then, similarly to the first embodiment, a light-emitting element 140 is formed by selectively applying a liquid optical material in an area surrounded by the step 111 by an inkjet method.

On the other hand, the scanning line 131, the signal line 132, the pixel electrode 141, the switching thin film transistor 142, the current thin film transistor 143, and the insulating film 240 are formed over the separation substrate 122 with the separation layer 152 interposed therebetween.

Finally, the structure peeled off from the peeling layer 122 on the peeling substrate 122 is transferred onto the display substrate 121.

Thus, even in this embodiment, since the liquid optical material is applied using the step 111, high-precision patterning can be performed.

Further, in this embodiment mode, damage to a base material such as the light-emitting element 140 due to subsequent processes, or to the scanning line 131, the signal line 132, the pixel electrode 141, the switching thin film transistor 142, the current thin film transistor 143, or the insulating film 240. It is possible to reduce damage caused by application of an optical material.

In this embodiment mode, the active matrix display element is described. However, a passive matrix display element may be used.

(5) Fifth Embodiment FIG. 10 is a diagram showing a sixth embodiment of the present invention.
As in the first embodiment, the matrix display element and the manufacturing method thereof according to the present invention are applied to an active matrix display device using an EL display element. In addition, the same code | symbol is attached | subjected to the structure similar to the said embodiment.
Further, FIG. 10 is a cross-sectional view showing the middle of the manufacturing process, and before and after that, since it is substantially the same as the first embodiment, its illustration and description are omitted.

That is, in the present embodiment, the concave step 111 is formed using the interlayer insulating film 240, thereby obtaining the same operation and effect as the first embodiment.

Further, since the step 111 is formed using the interlayer insulating film 240, the number of new processes is not particularly increased, so that the manufacturing process is not greatly complicated.

(6) Sixth Embodiment FIG. 11 is a diagram showing a sixth embodiment of the present invention.
As in the first embodiment, the matrix display element and the manufacturing method thereof according to the present invention are applied to an active matrix display device using an EL display element. In addition, the same code | symbol is attached | subjected to the structure similar to the said embodiment.
Further, FIG. 11 is a cross-sectional view showing the middle of the manufacturing process, and the front and rear thereof are substantially the same as those in the first embodiment, and the illustration and description thereof are omitted.

In other words, in this embodiment, the patterning accuracy is not improved by using a step, but the hydrophilicity at a predetermined position where the liquid optical material is applied is made relatively stronger than the surrounding hydrophilicity. Thus, the applied liquid optical material is prevented from spreading around.

Specifically, as shown in FIG. 11, after the interlayer insulating film 240 is formed, an amorphous silicon layer 155 is formed on the upper surface thereof. Since the amorphous silicon layer 155 has relatively higher water repellency than ITO forming the pixel electrode 141, the hydrophilicity of the surface of the pixel electrode 141 is relatively stronger than the surrounding hydrophilicity. A hydrophilic distribution is formed.

As in the first embodiment, a light-emitting element 140 is formed by selectively applying a liquid optical material to the upper surface of the pixel electrode 141 by an ink jet method, and finally a reflective electrode is formed. Form.

As described above, even in the present embodiment, since the liquid optical material is applied after the desired water repellency / lyophilic distribution is formed, the patterning accuracy can be improved. .

Needless to say, this embodiment can also be applied to a passive matrix display element.

Further, a step of transferring the structure formed over the peeling substrate 121 with the peeling layer 152 to the display substrate 121 may be included.

Further, in the present embodiment, the desired water repellency / hydrophilic distribution is formed by the amorphous silicon layer 155, but the water repellency / hydrophilic distribution may be formed of metal, an anodized film, polyimide, or the like. It may be formed of an insulating film such as silicon oxide or other materials. In the case of a passive matrix display element, the first bus wiring, and in the case of an active matrix display element, a scanning line 131, a signal line 132, and a pixel electrode 1
41, or an insulating film 240 or a light shielding layer. In the present embodiment, the description has been made on the assumption that the liquid optical material is an aqueous solution. However, a liquid optical material using another liquid solution may be used. Thus, liquid repellency and lyophilicity may be obtained.

(7) Seventh Embodiment In the seventh embodiment of the present invention, the cross-sectional structure is the same as that of FIG. 10 used in the fifth embodiment, so that this will be described.

That is, in the present embodiment, the interlayer insulating film 240 is formed of SiO ₂ and
The surface is irradiated with ultraviolet rays, and then the surface of the pixel electrode 141 is exposed, and a liquid optical material is selectively applied.

In such a manufacturing process, not only the step 111 is formed, but also a strong liquid repellency distribution is formed along the surface of the interlayer insulating film 240, so that the applied liquid optical material has the step 111. And the liquid repellency of the interlayer insulating film 240 tend to accumulate at a predetermined position. That is, since the effects of both the fifth embodiment and the sixth embodiment are exhibited, the patterning accuracy of the light emitting element 140 can be further improved.

Note that the timing of irradiating the ultraviolet rays may be either before or after exposing the surface of the pixel electrode 141, and may be appropriately selected according to the material for forming the interlayer insulating film 240, the material for forming the pixel electrode 141, and the like. Incidentally, when ultraviolet rays are irradiated before the surface of the pixel electrode 141 is exposed, the inner wall surface of the step 111 is not strong in liquid repellency, so that a liquid optical material is accumulated in the region surrounded by the step 111. It is advantageous. On the contrary, in the case of irradiating ultraviolet rays after exposing the surface of the pixel electrode 141, it is necessary to irradiate the ultraviolet rays vertically so that the liquid repellency of the inner wall surface of the step 111 does not become strong. Since the ultraviolet ray is irradiated after the etching process when the surface of the electrode 141 is exposed, there is an advantage that there is no concern that the liquid repellency is weakened by the etching process.

In addition, as a material for forming the interlayer insulating film 240, for example, a photoresist or polyimide can be used, which has an advantage that a film can be formed by spin coating.

Depending on the material forming the interlayer insulating film 240, the liquid repellency may be increased by irradiating plasma such as O ₂ , CF ₃ , Ar, etc. instead of irradiating ultraviolet rays.

(8) Eighth Embodiment FIG. 12 is a diagram showing an eighth embodiment of the present invention.
As in the first embodiment, the matrix display element and the manufacturing method thereof according to the present invention are applied to an active matrix display device using an EL display element. In addition, the same code | symbol is attached | subjected to the structure similar to the said embodiment.
Further, FIG. 12 is a cross-sectional view showing the middle of the manufacturing process, and the front and rear thereof are substantially the same as those in the first embodiment, and the illustration and description thereof are omitted.

That is, in this embodiment, the patterning accuracy is improved by using the attractive force or repulsive force due to the potential, rather than using the step, the liquid repellency / lyophilic distribution, or the like. .

That is, as shown in FIG. 12, the signal line 132 and the common power supply line 133 are driven, and a transistor (not shown) is appropriately turned on / off, whereby the pixel electrode 141 becomes a negative potential and the interlayer insulating film 240 becomes a positive potential. A potential distribution is formed. Then, a positively charged liquid optical material 114 is selectively applied to a predetermined position by an inkjet method.

As described above, according to the present embodiment, a desired potential distribution is formed on the display substrate 121, and the attractive force and repulsive force between the potential distribution and the positively charged liquid optical material 114 are used. Since the liquid optical material is selectively applied, patterning accuracy can be improved.

In particular, in the present embodiment, since the liquid optical material 114 is charged, the effect of improving the patterning accuracy is further enhanced by utilizing not only the spontaneous polarization but also the charged charge.

Although this embodiment mode shows a case where the present invention is applied to an active matrix display element, the present invention can also be applied to a passive matrix display element.

Note that a step of transferring the structure formed over the separation substrate 121 with the separation layer 152 to the display substrate 121 may be included.

In this embodiment mode, the desired potential distribution is such that a potential is sequentially applied to the scanning line 131, a potential is simultaneously applied to the signal line 132 and the common line 133, and the switching thin film transistor 142 and the current thin film transistor 143 are applied to the pixel electrode 141. It is formed by applying an electric potential through it.

The potential distribution is determined by scanning lines 131, signal lines 132, common lines 133, and pixel electrodes 141.
By forming with, the increase of the process can be suppressed. Note that in the case of a passive matrix display element, the potential distribution can be formed by the first bus wiring and the light shielding layer.

Further, in this embodiment, the pixel electrode 141 and the surrounding interlayer insulating film 240 are provided.
However, the present invention is not limited to this, for example, the thirteenth.
As shown in the drawing, the pixel electrode 141 may not be applied with a potential, but a positive potential may be applied only to the interlayer insulating film 240, and the liquid optical material 114 may be charged positively before application. In this way, the liquid optical material 114 can be reliably maintained in a positively charged state even after being applied, so that the surrounding interlayer insulating film 24 can be maintained.
The repulsive force between zero and the liquid optical material 114 can be more reliably prevented from flowing out to the surroundings.

In addition, unlike what was demonstrated in each said embodiment, the level | step difference 111, for example,
It may be formed by applying a liquid material, or the step 111 is formed on the peeling substrate through the peeling layer and peeled off from the peeling layer on the peeling substrate. Alternatively, the structure may be formed by transferring the structure.

In each of the above embodiments, an organic or inorganic EL is applicable as an optical material. However, the present invention is not limited to this, and the optical material may be a liquid crystal.
Industrial Applicability As described above, according to the present invention, a liquid optical material is applied using a step, a desired liquid repellency / lyophilic distribution, a desired potential distribution, or the like. As a result, the patterning accuracy of the optical material can be improved.

These are circuit diagrams which show a part of display apparatus in the 1st Embodiment of this invention. It is an enlarged plan view showing a planar structure of a pixel region. It is sectional drawing which shows the flow of the manufacturing process in 1st Embodiment. It is sectional drawing which shows the flow of the manufacturing process in 1st Embodiment. It is sectional drawing which shows the flow of the manufacturing process in 1st Embodiment. It is sectional drawing which shows the modification of 1st Embodiment. It is the top view and sectional drawing which show 2nd Embodiment. It is sectional drawing which shows a part of manufacturing process of 3rd Embodiment. It is sectional drawing which shows a part of manufacturing process of 4th Embodiment. It is sectional drawing which shows a part of manufacturing process of 5th Embodiment. It is sectional drawing which shows a part of manufacturing process of 6th Embodiment. It is sectional drawing which shows a part of manufacturing process of 8th Embodiment. It is sectional drawing which shows the modification of 8th Embodiment.

Claims (6)

In a manufacturing method of an optical device having a configuration in which an optical material is selectively arranged at a predetermined position on a substrate,
A method of manufacturing an optical device, comprising: applying a charged liquid optical material to a substrate on which a potential distribution is formed using an inkjet method. Further comprising a step of forming an interlayer insulating film so as to surround a predetermined position on the substrate;
The potential distribution is method of manufacturing an optical device according to claim 1, characterized in that it is set so that a repulsive force acts between the optical material of the interlayer insulating film and the liquid. Further comprising providing a first electrode at a predetermined position on the substrate;
3. The method of manufacturing an optical device according to claim 1, wherein the potential distribution is set so that an attractive force acts between the first electrode and the liquid optical material. A plurality of scanning lines, a plurality of signal lines, and a plurality of common power supply lines;
4. The potential distribution is formed by applying a predetermined potential to the plurality of signal lines and the plurality of common power supply lines, and sequentially scanning each of the plurality of scanning lines. The manufacturing method of the optical apparatus of any one. A plurality of pixels are provided at intersections of the plurality of scanning lines and the signal lines,
Each of the plurality of pixels, supplies the pixel electrode as the first electrode, and a switching thin film transistor in which the scanning signal from one of the plurality of scanning lines is supplied to the gate electrode, the signal line through the switching TFTs 5. The method of manufacturing an optical device according to claim 4 , further comprising: a storage capacitor that holds an image signal to be processed; and a current thin film transistor that supplies the image signal held by the storage capacitor to a gate electrode. Forming a plurality of first bus lines as the first electrodes ;
Forming a plurality of second bus wirings arranged in a direction orthogonal to the plurality of first bus wirings;
4. The method of manufacturing an optical device according to claim 3, wherein the potential distribution is formed by the plurality of first bus wirings.

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