JP2003168661A - Chemical mechanical polishing method - Google Patents
Chemical mechanical polishing methodInfo
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- JP2003168661A JP2003168661A JP2001367798A JP2001367798A JP2003168661A JP 2003168661 A JP2003168661 A JP 2003168661A JP 2001367798 A JP2001367798 A JP 2001367798A JP 2001367798 A JP2001367798 A JP 2001367798A JP 2003168661 A JP2003168661 A JP 2003168661A
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- Prior art keywords
- polishing
- film
- slurry
- chemical mechanical
- substrate
- Prior art date
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体装置の製造
工程に用いられる化学機械研磨（CMP; ChemicalMechani
cal Polishing）方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical mechanical polishing (CMP) used in a semiconductor device manufacturing process.
cal Polishing) method.
【０００２】[0002]
【従来の技術】例えば、半導体装置の動作速度の向上化
等を目的としてＡｌ配線層に比べてより低抵抗であるＣ
ｕ配線層を用いることが検討され、一部実用化されてい
る。このＣｕ配線層は、表面の段差を解消する目的でＣ
ＭＰ方法により形成されている。具体的には、半導体基
板上の絶縁膜に配線形状の溝を形成し、前記溝を含む前
記絶縁膜上にＣｕ膜を堆積し、前記Ｃｕ膜を研磨砥粒、
酸化剤および水を含む研磨スラリーとポリシング装置と
を用いてＣＭＰ処理し、前記溝内のみにＣｕ膜を残存さ
せて埋め込み配線層を形成する。2. Description of the Related Art For example, for the purpose of improving the operating speed of a semiconductor device, C having a lower resistance than an Al wiring layer is used.
The use of the u wiring layer has been studied and partially put into practical use. This Cu wiring layer is made of C for the purpose of eliminating steps on the surface.
It is formed by the MP method. Specifically, a wiring-shaped groove is formed in an insulating film on a semiconductor substrate, a Cu film is deposited on the insulating film including the groove, and the Cu film is polished with abrasive grains.
CMP treatment is performed using a polishing slurry containing an oxidant and water and a polishing device to leave a Cu film only in the groove to form a buried wiring layer.
【０００３】ところで、Ｃｕ配線層の形成において研磨
開始から研磨終了までの間に前記研磨砥粒、酸化剤およ
び水を含み、かつ組成の異なる複数の研磨スラリーに切
り替えて連続してＣＭＰ処理することが行われている。
具体的には、Ｃｕ膜を半導体基板の絶縁膜に形成した溝
に堆積するに先立って、埋込まれたＣｕ配線からのＣｕ
の拡散を防止する目的でＴａＮのような銅拡散防止膜を
堆積した場合、Ｃｕの研磨途中で銅拡散防止膜が表面に
露出するため、Ｃｕ膜の研磨スラリーと異なる組成の研
磨スラリーに切り替えることが行われている。By the way, in the formation of the Cu wiring layer, a plurality of polishing slurries containing the above-mentioned polishing abrasive grains, an oxidizer and water and having different compositions are continuously switched from the polishing start to the polishing end for continuous CMP treatment. Is being done.
Specifically, prior to depositing the Cu film in the groove formed in the insulating film of the semiconductor substrate, Cu from the embedded Cu wiring is
When a copper diffusion preventive film such as TaN is deposited for the purpose of preventing the diffusion of Cu, the copper diffusion preventive film is exposed on the surface during the polishing of Cu. Therefore, it is necessary to switch to a polishing slurry having a composition different from the polishing slurry of the Cu film. Is being done.
【０００４】しかしながら、前記連続的なＣＭＰにおい
て始めに使用する研磨スラリーと次に使用する研磨スラ
リーをそれぞれ単体で研磨を行っても支障がない場合で
も、連続して研磨すると後続の研磨スラリー中の研磨砥
粒が凝集して研磨面（例えばＣｕ膜表面）にスクラッチ
が生じる虞があった。However, even if there is no problem in polishing the polishing slurry used first and the polishing slurry used next in the continuous CMP individually, if the polishing is continuously performed, the polishing slurry in the subsequent polishing slurry is There is a possibility that the polishing abrasive particles may aggregate to cause scratches on the polishing surface (eg, Cu film surface).
【０００５】[0005]
【発明が解決しようとする課題】本発明は、連続的な研
磨途中で組成の異なる研磨スラリーに切り替えてもその
中の研磨砥粒の凝集を防止することが可能な化学機械研
磨方法を提供するものである。DISCLOSURE OF THE INVENTION The present invention provides a chemical mechanical polishing method capable of preventing the agglomeration of polishing abrasive grains therein even when the polishing slurry is changed to a polishing slurry having a different composition during continuous polishing. It is a thing.
【０００６】[0006]
【課題を解決するための手段】本発明に係る化学機械研
磨方法は、基板上の各種被膜を研磨開始から研磨終了ま
での間に研磨砥粒、酸化剤および水を含み、かつ組成の
異なる複数の研磨スラリーに切り替えて連続して化学機
械研磨する方法において、前記各研磨スラリーは、それ
らの中の研磨砥粒が示すゼータ電位の極性が同一である
ことを特徴とするものである。A chemical mechanical polishing method according to the present invention comprises a plurality of coatings containing polishing abrasive grains, an oxidizer and water and having different compositions from the start to the end of polishing. In the method of switching to the polishing slurry and continuously performing chemical mechanical polishing, each of the polishing slurries has the same polarity of zeta potential indicated by the polishing abrasive grains therein.
【０００７】[0007]
【発明の実施の形態】以下、本発明に係る化学機械研磨
方法を詳細に説明する。BEST MODE FOR CARRYING OUT THE INVENTION The chemical mechanical polishing method according to the present invention will be described in detail below.
【０００８】この化学機械研磨方法は、基板上の各種被
膜を研磨開始から研磨終了までの間に研磨砥粒、酸化剤
および水を含み、かつ組成の異なる複数の研磨スラリー
に切り替えて連続して化学機械研磨するに際し、前記各
研磨スラリーとしてそれらの中の研磨砥粒がスラリー中
で示すゼータ電位の極性を同一にしたものを用いる。In this chemical mechanical polishing method, various coatings on a substrate are continuously switched by switching to a plurality of polishing slurries containing polishing abrasive grains, an oxidizing agent and water and having different compositions from the start to the end of polishing. In the chemical mechanical polishing, as the above-mentioned respective polishing slurries, those in which the polishing abrasive grains in them have the same zeta potential polarity in the slurry are used.
【０００９】前記基板上の各種被膜としては、例えばＣ
ｕ膜、Ｃｕ合金膜、またはＴａＮ、ＴａＮｂ、Ｗ，Ｗ
Ｎ，ＴａＮ，ＴａＳｉＮ，Ｔａ，Ｃｏ，Ｚｒ，ＺｒＮお
よびＣｕＴａ合金から選ばれる１層または２層以上の銅
拡散防止膜等を挙げることができる。Examples of various coatings on the substrate include C
u film, Cu alloy film, or TaN, TaNb, W, W
Examples thereof include one or two or more layers of copper diffusion preventive film selected from N, TaN, TaSiN, Ta, Co, Zr, ZrN and CuTa alloys.
【００１０】前記研磨スラリー中の研磨砥粒としては、
例えばシリカ（コロイダルシリカを含む）、アルミナ
（コロイダルアルミナを含む）、酸化セリウム等を挙げ
ることができる。The abrasive grains in the polishing slurry are:
Examples thereof include silica (including colloidal silica), alumina (including colloidal alumina), cerium oxide and the like.
【００１１】前記各研磨スラリー中の前記酸化剤として
は、例えば過酸化水素（Ｈ2 Ｏ2 ）、次亜塩素酸ソーダ
（ＮａＣｌＯ）等を用いることができる。Hydrogen peroxide (H 2 O 2 ), sodium hypochlorite (NaClO) and the like can be used as the oxidizing agent in each polishing slurry.
【００１２】前記各研磨スラリー中には、さらに両性イ
オン性、陰イオン性、陽イオン性の界面活性剤が添加さ
れることを許容する。このような界面活性剤の使用にお
いては、同じイオン性を持つものが選ばれる。前記両性
イオン性界面活性剤としては、例えばイミダゾリベタイ
ン等を挙げることができる。前記陰イオン性界面活性剤
としては、例えばドデシル硫酸ナトリウム、ドデシル硫
酸アンモニウム等を挙げることができる。前記陽イオン
性界面活性剤としては、例えばステアリントリメチルア
ンモニウムクロライド等を挙げることができる。It is allowed that a zwitterionic, anionic or cationic surfactant is further added to each of the polishing slurries. In using such a surfactant, those having the same ionic property are selected. Examples of the zwitterionic surfactant include imidazolibetaine. Examples of the anionic surfactant include sodium dodecyl sulfate and ammonium dodecyl sulfate. Examples of the cationic surfactant include stearin trimethyl ammonium chloride.
【００１３】前記各研磨スラリー中には、さらにキレー
ト剤が添加されることを許容する。このキレート剤とし
ては、各種の有機酸を用いることができるが、特に各種
被膜としてＣｕ膜またはＣｕ合金膜を用いる場合には２
−キノリンカルボン酸（キナルジン酸）、２−ピリジン
カルボン酸、２，６−ピリジンカルボン酸、キノン等が
好ましい。A chelating agent may be added to each of the polishing slurries. As the chelating agent, various organic acids can be used, but especially when a Cu film or Cu alloy film is used as various coatings,
-Quinolinecarboxylic acid (quinaldic acid), 2-pyridinecarboxylic acid, 2,6-pyridinecarboxylic acid, quinone and the like are preferable.
【００１４】前記各研磨スラリー中には、さらに乳酸等
のｐＨ調整剤が添加されることを許容する。A pH adjusting agent such as lactic acid may be added to each of the polishing slurries.
【００１５】前述したＣＭＰにあたっては、例えば図１
に示すポリシング装置が用いられる。すなわち、ターン
テーブル１上には例えば布、独立気泡を有するポリウレ
タン発泡体から作られた研磨パッド２が被覆されてい
る。研磨スラリーを供給するための供給管３は、前記研
磨パッド２の上方に配置されている。上面に支持軸４を
有する基板ホルダ５は、研磨パッド２の上方に上下動自
在でかつ回転自在に配置されている。In the above-mentioned CMP, for example, FIG.
The polishing apparatus shown in is used. That is, the turntable 1 is covered with a polishing pad 2 made of, for example, cloth or polyurethane foam having closed cells. A supply pipe 3 for supplying the polishing slurry is arranged above the polishing pad 2. The substrate holder 5 having the support shaft 4 on the upper surface is arranged above the polishing pad 2 so as to be vertically movable and rotatable.
【００１６】このようなポリシング装置において、前記
ホルダ５により基板６をその研磨面（被膜）が前記研磨
パッド２に対向するように保持し、前記供給管３から前
述した組成の研摩スラリー７を供給しながら、前記支持
軸４により前記基板６を前記研磨パッド２に向けて所望
の加重を与え、さらに前記ホルダ５および前記ターンテ
ーブル１をそれぞれ同方向に回転させることにより前記
基板６上の被膜が研磨される。In such a polishing apparatus, the holder 5 holds the substrate 6 so that its polishing surface (coating) faces the polishing pad 2, and the polishing slurry 7 having the above-mentioned composition is supplied from the supply pipe 3. However, a desired weight is applied to the substrate 6 toward the polishing pad 2 by the support shaft 4, and the holder 5 and the turntable 1 are rotated in the same direction, respectively. To be polished.
【００１７】本発明に係る化学機械研磨方法は、次のよ
うな半導体装置の製造方法に適用することができる。The chemical mechanical polishing method according to the present invention can be applied to the following semiconductor device manufacturing method.
【００１８】まず、半導体基板上の絶縁膜に配線層の形
状に相当する溝およびビアフィルの形状に相当する開口
部から選ばれる少なくとも１つの埋込み用部材を形成す
る。この埋込み用部材の内面を含む前記絶縁膜上に銅拡
散防止膜を形成する。この銅拡散防止膜上に銅または銅
合金からなる配線材料膜を形成する。研磨砥粒と酸化剤
と水とを含有する第１研磨組成物を用いて前記配線材料
膜を研磨する。この研磨過程で前記銅拡散防止膜が露出
する直前もしくは直後に表面が前記第１研磨組成物によ
り濡れた状態で研磨砥粒と酸化剤と水とを含有する第２
研磨組成物に切り替えて前記銅拡散防止膜を研磨して前
記埋込み部材内に前記銅拡散防止膜で覆われた状態で埋
込まれた配線層（またはビアフィル）を形成する。この
ような配線層等の形成において、第２研磨スラリーとし
てその研磨砥粒が示すゼータ電位と前記第１研磨スラリ
ー中で研磨砥粒が示すゼータ電位とが同一極性で、かつ
前記第１研磨組成物中の酸化剤より多い量の酸化剤を含
む組成のものを用いる。First, at least one embedding member selected from a groove corresponding to the shape of a wiring layer and an opening corresponding to the shape of a via fill is formed in an insulating film on a semiconductor substrate. A copper diffusion preventing film is formed on the insulating film including the inner surface of the embedding member. A wiring material film made of copper or a copper alloy is formed on the copper diffusion prevention film. The wiring material film is polished using a first polishing composition containing abrasive grains, an oxidizing agent, and water. In this polishing process, immediately before or after the copper diffusion barrier film is exposed, a second surface containing abrasive grains, an oxidizing agent, and water in a state in which the surface is wet with the first polishing composition.
By switching to a polishing composition, the copper diffusion preventing film is polished to form a wiring layer (or a via fill) embedded in the embedded member while being covered with the copper diffusion preventing film. In the formation of such a wiring layer or the like, the zeta potential of the polishing abrasive grains as the second polishing slurry and the zeta potential of the polishing abrasive grains in the first polishing slurry have the same polarity, and the first polishing composition is the same. The composition having a larger amount of oxidizer than the oxidizer in the product is used.
【００１９】前記銅拡散防止膜としては、例えばＴａ
Ｎ、ＴａＮｂ、Ｗ，ＷＮ，ＴａＮ，ＴａＳｉＮ，Ｔａ，
Ｃｏ，Ｚｒ，ＺｒＮおよびＣｕＴａ合金から選ばれる１
層または２層以上のものを挙げることができる。The copper diffusion preventive film is, for example, Ta.
N, TaNb, W, WN, TaN, TaSiN, Ta,
1 selected from Co, Zr, ZrN and CuTa alloys
A layer or two or more layers can be mentioned.
【００２０】前記第１，第２の研磨スラリー中の研磨砥
粒、酸化剤は、前述したのと同様なものを用いることが
できる。As the abrasive grains and oxidizing agent in the first and second polishing slurries, the same ones as described above can be used.
【００２１】前記第１，第２の研磨スラリー中には、さ
らに前述した両性イオン性、陰イオン性、陽イオン性の
界面活性剤、キレート剤、ｐＨ調整剤が添加されること
を許容する。The above-mentioned zwitterionic, anionic, and cationic surfactants, chelating agents, and pH adjusters may be added to the first and second polishing slurries.
【００２２】前記第１研磨スラリーは、ＣｕまたはＣｕ
合金の配線材料膜に対した高い研磨性を示し、前記第２
研磨スラリーは配線材料膜と銅拡散防止膜の両者を略同
じ速度で研磨する性質を有する。The first polishing slurry is Cu or Cu.
It has a high polishing property with respect to an alloy wiring material film.
The polishing slurry has a property of polishing both the wiring material film and the copper diffusion preventing film at substantially the same rate.
【００２３】前記配線材料膜、配線材料膜と銅拡散防止
膜の研磨にあたっては、前述したポリシング装置が用い
られる。The polishing apparatus described above is used for polishing the wiring material film, the wiring material film and the copper diffusion preventing film.
【００２４】以上説明した本発明に係る化学機械研磨方
法は、基板上の各種被膜を研磨開始から研磨終了までの
間に研磨砥粒、酸化剤および水を含み、かつ組成の異な
る複数の研磨スラリーに切り替えて連続して化学機械研
磨するに際し、前記各研磨スラリーとしてそれらの中の
研磨砥粒がスラリー中で示すゼータ電位の極性を同一に
したものを用いる。The chemical mechanical polishing method according to the present invention described above includes a plurality of polishing slurries each containing polishing abrasive grains, an oxidizer and water and having different compositions from the start to the end of polishing of various coatings on a substrate. When the chemical mechanical polishing is continuously performed by switching to, the polishing slurry having the same zeta potential polarity in the slurry is used as the polishing slurry.
【００２５】このような方法によれば、研磨開始から研
磨終了までの間に複数の研磨スラリーに切り替えて連続
的に研磨するに際し、研磨砥粒がスラリー中で示すゼー
タ電位の極性を同一にした研磨スラリーを用いることに
よって、初期研磨後の第２研磨以降において研磨スラリ
ー中の研磨砥粒の凝集を防止できるため、基板上の各種
被膜にスクラッチが発生するのを防止できる。According to such a method, when the polishing slurry is switched to a plurality of polishing slurries and continuously polished between the start of polishing and the end of polishing, the polishing abrasive grains have the same zeta potential polarity in the slurry. By using the polishing slurry, it is possible to prevent agglomeration of the polishing abrasive grains in the polishing slurry after the second polishing after the initial polishing, and thus it is possible to prevent scratches from forming on various coatings on the substrate.
【００２６】[0026]
【実施例】以下、好ましい実施例を詳細に説明する。The preferred embodiment will be described in detail below.
【００２７】下記表１に示す組成、ｐＨおよびゼータ電
位（研磨砥粒がスラリー中で示すゼータ電位）を有する
４種の研磨スラリーＡ〜研磨スラリーＤを調製した。Four types of polishing slurries A to polishing slurries D having compositions, pHs and zeta potentials (zeta potentials exhibited by the polishing abrasive grains in the slurry) shown in Table 1 below were prepared.
【００２８】[0028]
【表１】 [Table 1]
【００２９】（実施例１）まず、表面に厚さ１０００ｎ
ｍのＣｕ膜を成膜した８インチシリコンウェハ（シリコ
ン基板）を用意した。(Example 1) First, a thickness of 1000 n was formed on the surface.
An 8-inch silicon wafer (silicon substrate) having a Cu film of m was prepared.
【００３０】次いで、前述した図１に示すポリシング装
置のホルダ５により前記基板６をそのＣｕ膜が研磨パッ
ド２に対向するように保持し、供給管３から前記表１の
研磨スラリーＡを２００ｃｃ／分を供給しながら、支持
軸４により前記基板６を前記研磨パッド２に向けて２０
０ｇ／ｃｍ2の荷重を与え、さらに前記ホルダ５および
前記ターンテーブル１をそれぞれ６０ｒｐｍ，６３ｒｐ
ｍの速度で同方向に回転させることにより前記基板６上
Ｃｕ膜を３０秒間研磨した（第１研磨）。つづいて、供
給管３から前記研磨スラリーＡの供給を停止し、供給管
３から前記表１に示す研磨スラリーＣを研磨スラリーＡ
が付着された研磨パッド２に供給しながら、同様な条件
で前記基板６のＣｕ膜を３０秒間研磨した（第２研
磨）。その後、純水ブラシで１分間洗浄した後に２００
０ｒｐｍの条件でスピン乾燥を行った。Then, the substrate 6 is held by the holder 5 of the polishing apparatus shown in FIG. 1 so that its Cu film faces the polishing pad 2, and 200 cc / g of the polishing slurry A shown in Table 1 is supplied from the supply pipe 3. The substrate 6 is directed toward the polishing pad 2 by the support shaft 4 while supplying the amount.
A load of 0 g / cm 2 is applied, and the holder 5 and the turntable 1 are further rotated at 60 rpm and 63 rp, respectively.
The Cu film on the substrate 6 was polished for 30 seconds by rotating in the same direction at a speed of m (first polishing). Subsequently, the supply of the polishing slurry A from the supply pipe 3 is stopped, and the polishing slurry C shown in Table 1 is supplied from the supply pipe 3 to the polishing slurry A.
The Cu film on the substrate 6 was polished for 30 seconds under the same conditions while being supplied to the polishing pad 2 to which was attached (second polishing). Then, after cleaning with a pure water brush for 1 minute, 200
Spin drying was performed under the condition of 0 rpm.
【００３１】（実施例２）第１研磨を前記表１に示す研
磨スラリーＢ、第２研磨を前記表１に示す研磨スラリー
Ｄを用いて行った以外、実施例１と同様な条件で基板表
面のＣｕ膜を連続して研磨し、洗浄、乾燥した。Example 2 A substrate surface was prepared under the same conditions as in Example 1 except that the first polishing was performed using the polishing slurry B shown in Table 1 above and the second polishing was performed using the polishing slurry D shown in Table 1 above. Cu film was continuously polished, washed and dried.
【００３２】（比較例１）第１研磨を前記表１に示す研
磨スラリーＡ、第２研磨を前記表１に示す研磨スラリー
Ｂを用いて行った以外、実施例１と同様な条件で基板表
面のＣｕ膜を連続して研磨し、洗浄、乾燥した。(Comparative Example 1) Substrate surface under the same conditions as in Example 1 except that the first polishing was performed using the polishing slurry A shown in Table 1 above and the second polishing was performed using the polishing slurry B shown in Table 1 above. Cu film was continuously polished, washed and dried.
【００３３】（比較例２）第１研磨を前記表１に示す研
磨スラリーＡ、第２研磨を前記表１に示す研磨スラリー
Ｄを用いて行った以外、実施例１と同様な条件で基板表
面のＣｕ膜を連続して研磨し、洗浄、乾燥した。(Comparative Example 2) Substrate surface under the same conditions as in Example 1 except that the first polishing was performed using the polishing slurry A shown in Table 1 above and the second polishing was performed using the polishing slurry D shown in Table 1 above. Cu film was continuously polished, washed and dried.
【００３４】実施例１，２および比較例１，２の連続研
磨後にＣｕ膜表面の１μｍ以上のスクラッチを検査装置
（KLA-Tencor社製商品名;SFS6420）と電子顕微鏡を用い
て調べた。その結果を下記表２に示す。After continuous polishing of Examples 1 and 2 and Comparative Examples 1 and 2, scratches of 1 μm or more on the Cu film surface were examined by using an inspection device (trade name: SFS6420 manufactured by KLA-Tencor) and an electron microscope. The results are shown in Table 2 below.
【００３５】[0035]
【表２】 [Table 2]
【００３６】前記表２から明らかなように第１，第２の
Ｃｕ研磨においてゼータ電位の極性が異なる研磨スラリ
ーを用いる比較例１，２では連続研磨後のＣｕ膜表面の
スクラッチ数が３５，１８と多くなることがわかる。こ
れに対し、第１，第２のＣｕ研磨においてゼータ電位の
極性が同じ研磨スラリーを用いる実施例１，２では連続
研磨後のＣｕ膜表面のスクラッチ数が１以下と優れた研
磨特性を示すことがわかる。As is clear from Table 2, in Comparative Examples 1 and 2 which use polishing slurries having different zeta potential polarities in the first and second Cu polishing, the number of scratches on the Cu film surface after continuous polishing is 35,18. It turns out that it will increase. On the other hand, in Examples 1 and 2 in which the polishing slurries having the same polarity of zeta potential were used in the first and second Cu polishing, the number of scratches on the Cu film surface after continuous polishing was 1 or less, which is excellent polishing property. I understand.
【００３７】（実施例３）まず、図２の（Ａ）に示すよ
うに表面に図示しないソース、ドレイン等の拡散層が形
成されたシリコン基板１１上にＣＶＤ法により層間絶縁
膜としての例えば厚さ１０００ｎｍのＳｉＯ2 膜１２を
堆積した後、前記ＳｉＯ2 膜１２にフォトエッチング技
術により配線層に相当する形状を有する深さ５００ｎｍ
の複数の溝１３を形成した。つづいて、図２の（Ｂ）に
示すように前記溝１３を含む前記ＳｉＯ2 膜１２上にス
パッタ蒸着により厚さ１５ｎｍのＴａＮからなる銅拡散
防止膜１４および厚さ６００ｎｍのＣｕ膜１５をこの順
序で形成した。(Embodiment 3) First, as shown in FIG. 2A, a silicon substrate 11 having a diffusion layer (not shown) such as a source and a drain formed on the surface thereof is formed by CVD, for example, as an interlayer insulating film. After depositing a SiO 2 film 12 having a thickness of 1000 nm, a depth of 500 nm having a shape corresponding to a wiring layer is formed on the SiO 2 film 12 by a photoetching technique.
A plurality of grooves 13 were formed. Subsequently, as shown in FIG. 2B, a 15 nm-thick copper diffusion preventing film 14 made of TaN and a 600 nm-thick Cu film 15 are formed on the SiO 2 film 12 including the groove 13 by sputter deposition. Formed in order.
【００３８】次いで、前述した図１に示すポリシング装
置の基板ホルダ５に図２の（Ｂ）に示す基板１１を逆さ
にして保持し、前記ホルダ５の支持軸４により前記基板
をターンテーブル１上のローデル社製商品名；ＩＣ１０
００からなる研磨パッド２に５００ｇ／ｃｍ2 の荷重を
与え、前記ターンテーブル１およびホルダ５をそれぞれ
１０３ｒｐｍ、１００ｒｐｍの速度で同方向に回転させ
ながら、第１研磨スラリーを供給管３から５０ｍｌ／分
の速度で前記研磨パッド２に供給して前記基板１１に形
成したＣｕ膜１５を前記ＳｉＯ2 膜１２上の前記銅拡散
防止膜１４の表面が露出するまで研磨した。ここで、前
記第１研磨スラリーとして２−キノリンカルボン酸（キ
ナルジン酸）０．５７重量％、過酸化水素３．７８重量
％、アルミナ１．０９重量％、乳酸０．６７重量％、ド
デシル硫酸アンモニウム１．００重量％および水の組成
（ｐＨ；３、ゼータ電位；−２０ｍＶ）を有するものを
用いた。Next, the substrate 11 shown in FIG. 2B is held upside down on the substrate holder 5 of the polishing apparatus shown in FIG. 1, and the substrate is mounted on the turntable 1 by the support shaft 4 of the holder 5. Product name of Rodel Co .; IC10
A load of 500 g / cm 2 is applied to the polishing pad 2 made of 00, while the turntable 1 and the holder 5 are rotated in the same direction at speeds of 103 rpm and 100 rpm, respectively, and the first polishing slurry is supplied from the supply pipe 3 at 50 ml / min. The Cu film 15 formed on the substrate 11 by being supplied to the polishing pad 2 at the rate of was polished until the surface of the copper diffusion preventing film 14 on the SiO 2 film 12 was exposed. Here, as the first polishing slurry, 2-quinolinecarboxylic acid (quinaldic acid) 0.57% by weight, hydrogen peroxide 3.78% by weight, alumina 1.09% by weight, lactic acid 0.67% by weight, ammonium dodecyl sulfate 1 Those having a composition of 0.000% by weight and water (pH; 3, zeta potential; -20 mV) were used.
【００３９】次いで、前記供給管３から前記第１研磨ス
ラリーの供給を停止し、供給管３から下記組成の第２研
磨スラリーを第１研磨スラリーが付着された研磨パッド
２に供給しながら、同様な条件で前記基板１１の銅拡散
防止膜およびＣｕ膜を連続的に研磨した。ここで前記第
２研磨スラリーとして２−キノリンカルボン酸０．５７
重量％、過酸化水素４．６７重量％、コロイダルシリカ
５．０重量％、乳酸０．６７重量％、ドデシル硫酸アン
モニウム１．００重量％および水の組成（ｐＨ；３、ゼ
ータ電位；−２５ｍＶ）を有するものを用いた。このよ
うな第２研磨スラリーによる研磨によって、図２の
（Ｃ）に示すように前記溝１３内に銅拡散防止膜１４が
残存すると共に、前記銅拡散防止膜１４で覆われた前記
溝１３内に前記ＳｉＯ2 膜１２表面とほぼ面一な埋め込
みＣｕ配線層１６が形成された。Then, the supply of the first polishing slurry from the supply pipe 3 is stopped, and the second polishing slurry having the following composition is supplied from the supply pipe 3 to the polishing pad 2 to which the first polishing slurry is adhered. The copper diffusion prevention film and the Cu film of the substrate 11 were continuously polished under various conditions. Here, 2-quinolinecarboxylic acid 0.57 is used as the second polishing slurry.
%, Hydrogen peroxide 4.67% by weight, colloidal silica 5.0% by weight, lactic acid 0.67% by weight, ammonium dodecylsulfate 1.00% by weight and water composition (pH; 3, zeta potential; -25 mV). The one which has was used. By the polishing with the second polishing slurry, the copper diffusion preventive film 14 remains in the groove 13 as shown in FIG. 2C, and the inside of the groove 13 covered with the copper diffusion preventive film 14 is removed. A buried Cu wiring layer 16 which is substantially flush with the surface of the SiO 2 film 12 is formed on the surface.
【００４０】また、前記Ｃｕ配線層１６表面を検査装置
（KLA-Tencor社製商品名;SFS6420）と電子顕微鏡を用い
て調べたところ、前記Ｃｕ配線層１６表面へのスクラッ
チの発生は殆ど認められなかった。When the surface of the Cu wiring layer 16 was examined with an inspection device (KLA-Tencor, trade name; SFS6420) and an electron microscope, almost no scratches were found on the surface of the Cu wiring layer 16. There wasn't.
【００４１】[0041]
【発明の効果】以上詳述したように本発明によれば、連
続的な研磨途中で組成の異なる研磨スラリーに切り替え
てもその中の研磨砥粒の凝集を防止して研磨表面へのス
クラッチの発生を防止することが可能な化学機械研磨方
法を提供することができる。As described above in detail, according to the present invention, even if the polishing slurry having a different composition is switched during the continuous polishing, the agglomeration of the polishing abrasive grains in the slurry is prevented and the scratch on the polishing surface is prevented. A chemical mechanical polishing method capable of preventing the occurrence can be provided.
【図１】本発明の研磨工程に使用されるポリシング装置
を示す概略図。FIG. 1 is a schematic view showing a polishing apparatus used in a polishing process of the present invention.
【図２】本発明の実施例３における半導体装置の製造工
程を示す断面図。FIG. 2 is a sectional view showing a manufacturing process of a semiconductor device according to a third embodiment of the invention.
１…ターンテーブル、 ２…研磨パッド、 ３…供給管、 ５…ホルダ、 １１，…シリコン基板、 １３…溝、 １４…銅拡散防止膜、 １５…Ｃｕ膜、 １６…Ｃｕ配線層。 1 ... turntable, 2 ... polishing pad, 3 ... Supply pipe, 5 ... Holder, 11, ... Silicon substrate, 13 ... groove, 14 ... Copper diffusion preventive film, 15 ... Cu film, 16 ... Cu wiring layer.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｃ０９Ｋ 3/14 Ｃ０９Ｋ 3/14 ５５０Ｚ (72)発明者 林 俊秀 神奈川県横浜市栄区笠間二丁目５番１号 芝浦メカトロニクス株式会社横浜事業所内 Ｆターム(参考） 3C047 FF08 GG15 3C058 AA07 CB03 CB07 DA02 DA13 DA17 ─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 7 Identification code FI theme code (reference) C09K 3/14 C09K 3/14 550Z (72) Inventor Toshihide Hayashi 2-5-1, Kasama, Sakae-ku, Yokohama-shi, Kanagawa No. Shibaura Mechatronics Co., Ltd. Yokohama Office F-term (reference) 3C047 FF08 GG15 3C058 AA07 CB03 CB07 DA02 DA13 DA17
Claims (4)
了までの間に研磨砥粒、酸化剤および水を含み、かつ組
成の異なる複数の研磨スラリーに切り替えて連続して化
学機械研磨する方法において、 前記各研磨スラリーは、それらの中の研磨砥粒が示すゼ
ータ電位の極性が同一であることを特徴とする化学機械
研磨方法。1. A method of continuously performing chemical mechanical polishing of various coatings on a substrate by switching to a plurality of polishing slurries containing polishing abrasive grains, an oxidizer and water and having different compositions from the start of polishing to the end of polishing. In the chemical mechanical polishing method, each of the polishing slurries has the same polarity of zeta potential indicated by the polishing abrasive grains therein.
ン性を持つ界面活性剤を含有することを特徴とする請求
項１記載の化学機械研磨方法。2. The chemical mechanical polishing method according to claim 1, wherein each of the polishing slurries further contains a surfactant having the same ionicity.
剤を含有することを特徴とする請求項１または２記載の
化学機械研磨方法。3. The chemical mechanical polishing method according to claim 1, wherein each of the polishing slurries further contains a chelating agent.
剤を含有することを特徴とする請求項１ないし３いずれ
か記載の化学機械研磨方法。4. The chemical mechanical polishing method according to claim 1, wherein each of the polishing slurries further contains a pH adjusting agent.
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| JP2001367798A JP4077192B2 (en) | 2001-11-30 | 2001-11-30 | Chemical mechanical polishing method and semiconductor device manufacturing method |
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