JP2003158124A5 - - Google Patents

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Publication number
JP2003158124A5
JP2003158124A5 JP2001353902A JP2001353902A JP2003158124A5 JP 2003158124 A5 JP2003158124 A5 JP 2003158124A5 JP 2001353902 A JP2001353902 A JP 2001353902A JP 2001353902 A JP2001353902 A JP 2001353902A JP 2003158124 A5 JP2003158124 A5 JP 2003158124A5
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JP
Japan
Prior art keywords
compound semiconductors
film
mind
semiconductor device
kept
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001353902A
Other languages
English (en)
Japanese (ja)
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JP2003158124A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2001353902A priority Critical patent/JP2003158124A/ja
Priority claimed from JP2001353902A external-priority patent/JP2003158124A/ja
Publication of JP2003158124A publication Critical patent/JP2003158124A/ja
Publication of JP2003158124A5 publication Critical patent/JP2003158124A5/ja
Pending legal-status Critical Current

Links

JP2001353902A 2001-11-20 2001-11-20 化合物半導体上への炭素系薄膜の形成方法 Pending JP2003158124A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001353902A JP2003158124A (ja) 2001-11-20 2001-11-20 化合物半導体上への炭素系薄膜の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001353902A JP2003158124A (ja) 2001-11-20 2001-11-20 化合物半導体上への炭素系薄膜の形成方法

Publications (2)

Publication Number Publication Date
JP2003158124A JP2003158124A (ja) 2003-05-30
JP2003158124A5 true JP2003158124A5 (https=) 2004-11-18

Family

ID=19165833

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001353902A Pending JP2003158124A (ja) 2001-11-20 2001-11-20 化合物半導体上への炭素系薄膜の形成方法

Country Status (1)

Country Link
JP (1) JP2003158124A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007266083A (ja) * 2006-03-27 2007-10-11 Renesas Technology Corp 半導体装置およびその製造方法
JP5673107B2 (ja) * 2011-01-05 2015-02-18 富士電機株式会社 炭化珪素半導体デバイスの作製方法

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