JP2003152160A - 電子パワーデバイス及びその製作方法 - Google Patents

電子パワーデバイス及びその製作方法

Info

Publication number
JP2003152160A
JP2003152160A JP2002316673A JP2002316673A JP2003152160A JP 2003152160 A JP2003152160 A JP 2003152160A JP 2002316673 A JP2002316673 A JP 2002316673A JP 2002316673 A JP2002316673 A JP 2002316673A JP 2003152160 A JP2003152160 A JP 2003152160A
Authority
JP
Japan
Prior art keywords
metal layer
layer
electronic power
power device
gate finger
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002316673A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003152160A5 (show.php
Inventor
Ferruccio Frisina
フリシナ フェルッチオ
Antonio Pinto
ピント アントニオ
Angelo Magli
マリア アンジェロ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Publication of JP2003152160A publication Critical patent/JP2003152160A/ja
Publication of JP2003152160A5 publication Critical patent/JP2003152160A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H10W72/20—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H10D64/2527—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices for vertical devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H10W20/40—
    • H10W70/481—
    • H10W72/60—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H10W72/07636—
    • H10W72/251—
    • H10W72/622—
    • H10W72/652—
    • H10W72/871—
    • H10W72/926—
    • H10W74/00—
    • H10W90/756—

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)
  • Junction Field-Effect Transistors (AREA)
JP2002316673A 2001-10-30 2002-10-30 電子パワーデバイス及びその製作方法 Pending JP2003152160A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IT2001A002284 2001-10-30
IT2001MI002284A ITMI20012284A1 (it) 2001-10-30 2001-10-30 Metodo per il perfezionamento della connessione elettrica tra un dispositivo elettronico di potenza ed il suo package

Publications (2)

Publication Number Publication Date
JP2003152160A true JP2003152160A (ja) 2003-05-23
JP2003152160A5 JP2003152160A5 (show.php) 2005-11-04

Family

ID=11448561

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002316673A Pending JP2003152160A (ja) 2001-10-30 2002-10-30 電子パワーデバイス及びその製作方法

Country Status (4)

Country Link
US (1) US7126173B2 (show.php)
EP (1) EP1310993A3 (show.php)
JP (1) JP2003152160A (show.php)
IT (1) ITMI20012284A1 (show.php)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006025959B4 (de) * 2006-06-02 2010-03-04 Infineon Technologies Ag Leistungshalbleiteranordnung mit vorderseitig aufgelötetem Clip und Verfahren zur Herstellung einer solchen
US9589937B2 (en) * 2014-08-08 2017-03-07 Wuhan Xinxin Semiconductor Manufacturing Co., Ltd Semiconductor cooling method and method of heat dissipation

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4067041A (en) * 1975-09-29 1978-01-03 Hutson Jearld L Semiconductor device package and method of making same
US4561468A (en) * 1982-04-19 1985-12-31 Valcor Engineering Corporation Valve for use in jet engine systems and the like
DE3224642A1 (de) * 1982-07-01 1984-01-05 Siemens AG, 1000 Berlin und 8000 München Igfet mit injektorzone
US4561168A (en) * 1982-11-22 1985-12-31 Siliconix Incorporated Method of making shadow isolated metal DMOS FET device
DE3788470T2 (de) * 1986-08-08 1994-06-09 Philips Nv Verfahren zur Herstellung eines Feldeffekttransistors mit isoliertem Gate.
US4959705A (en) * 1988-10-17 1990-09-25 Ford Microelectronics, Inc. Three metal personalization of application specific monolithic microwave integrated circuit
US5404040A (en) * 1990-12-21 1995-04-04 Siliconix Incorporated Structure and fabrication of power MOSFETs, including termination structures
EP0693773B1 (en) * 1994-07-14 2005-02-09 STMicroelectronics S.r.l. VDMOS power device and manufacturing process thereof
US5767546A (en) 1994-12-30 1998-06-16 Siliconix Incorporated Laternal power mosfet having metal strap layer to reduce distributed resistance
US5597765A (en) * 1995-01-10 1997-01-28 Siliconix Incorporated Method for making termination structure for power MOSFET
US5681761A (en) * 1995-12-28 1997-10-28 Philips Electronics North America Corporation Microwave power SOI-MOSFET with high conductivity metal gate
US6342715B1 (en) * 1997-06-27 2002-01-29 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
WO1999004433A2 (en) * 1997-07-19 1999-01-28 Koninklijke Philips Electronics N.V. Mcm semiconductor device assemblies and circuits
US6040626A (en) * 1998-09-25 2000-03-21 International Rectifier Corp. Semiconductor package
US6940142B2 (en) * 2001-07-02 2005-09-06 Xerox Corporation Low data line capacitance image sensor array using air-gap metal crossover
JP2004055812A (ja) * 2002-07-19 2004-02-19 Renesas Technology Corp 半導体装置
JP2006049341A (ja) * 2004-07-30 2006-02-16 Renesas Technology Corp 半導体装置およびその製造方法
US7274092B2 (en) * 2005-09-13 2007-09-25 Infineon Technologies, Ag Semiconductor component and method of assembling the same

Also Published As

Publication number Publication date
EP1310993A2 (en) 2003-05-14
EP1310993A3 (en) 2003-07-16
US20030100154A1 (en) 2003-05-29
ITMI20012284A1 (it) 2003-04-30
US7126173B2 (en) 2006-10-24

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