JP2003152001A - Semiconductor device, csp and method for manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of stably mounting a semiconductor element on a board. SOLUTION: A semiconductor element 1 is flip-chip mounted on a board 2, and a sealing resin 6 is filled between the board 2 and the semiconductor element 1. A shoulder 10 is formed in a fillet region 9 of the sealing resin 6.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufactured by using a flip chip mounting technique, a CSP, and a manufacturing method thereof.

[0002]

2. Description of the Related Art With the recent development of electronic information devices,
The degree of integration of semiconductor elements is increasing, the size of semiconductor devices is decreasing, and the pitch of connecting terminals is decreasing. In order to support such high-density mounting, there is an increasing need for flip-chip mounting technology.

FIG. 8 shows an example of a semiconductor device manufactured by using a conventional flip chip mounting technique. Figure 8 (a)
[FIG. 6] is a plan view of a conventional semiconductor device. FIG. 8B shows
FIG. 9 is a cross-sectional view of ZZ ′ in the semiconductor device of FIG. 8A, showing a mounting mode of the semiconductor element 1. As shown in FIG. 8B, the electrode 7 on the semiconductor element 1 is connected to the electrode 8 on the substrate 2. Reference numeral 3 denotes a protruding electrode, which is formed on the electrode 7 of the semiconductor element 1 and is electrically connected to the electrode 8 on the substrate 2 via the conductive adhesive 4. The space between the semiconductor element 1 and the substrate 2 is sealed and filled with a temporary fixing resin 5 and a sealing resin 6.

The manufacturing process of a semiconductor device according to the prior art will be described below with reference to FIG. First, as shown in FIG. 9A, the semiconductor element 1 in which the conductive adhesive 4 is applied to the tip of the protruding electrode 3 and the substrate 2 in which the temporary fixing resin 5 is applied are face-to-face. Face each other. next,
As shown in FIG. 9B, the semiconductor element 1 is mounted on the substrate 2, and the temporary fixing resin 5 is heated and cured, and at the same time, the conductive adhesive 4 is heated and dried. Further, as shown in FIG. 9C, a liquid sealing resin 6 is injected between the semiconductor element 1 and the substrate 2 by a side flow method or the like using a resin coating device 17. Then, as shown in FIG. 9D, the sealing resin 6 is heated and cured to obtain a semiconductor device.

[0005]

However, in this technique, as shown in FIG. 10, when the fillet width 9a is shortened, the thickness of the upper portion of the fillet 9 becomes thin, and cracks 18 occur in the thinned portion. However, as a result, the quality of the manufactured semiconductor device is impaired due to damage to the junction.

The present invention has been made in order to solve the above-mentioned problems, and corresponds to the recent high-density mounting of semiconductor elements, and the reliability that the semiconductor elements 1 can be stably mounted on the substrate 2. It is an object of the present invention to provide a highly reliable semiconductor device manufacturing method and a high quality semiconductor device in which the fillet portion has high physical strength.

[0007]

In order to achieve the above object, in a semiconductor device of the present invention, a semiconductor element is flip-chip mounted on a substrate, and a sealing resin is filled between the substrate and the semiconductor element. A shoulder portion is formed at the fillet portion of the sealing resin.

In order to achieve the above object, in the CSP of the present invention, a plurality of semiconductor elements are flip-chip mounted on a substrate, a sealing resin is filled between the substrate and the semiconductor elements, and sealing is performed. A shoulder portion is formed at the resin fillet portion.

As a result, the obtained semiconductor device has excellent temperature cycle characteristics and moisture resistance characteristics.

In order to achieve the above object, the method for manufacturing a semiconductor device of the present invention includes a step of flip-chip mounting a semiconductor element on a substrate. Then, a step of mounting the semiconductor element on the substrate, a step of filling a sealing resin between the substrate and the semiconductor element, and a step of curing the sealing resin to form a shoulder portion at a fillet portion of the sealing resin. Including and

In order to achieve the above object, the method of manufacturing a CSP of the present invention includes a step of flip-chip mounting a plurality of semiconductor elements on a substrate. Then, a step of mounting the semiconductor element on the substrate, a step of filling a sealing resin between the substrate and the plurality of semiconductor elements, and a sealing resin for forming a shoulder portion at a fillet portion of the sealing resin. And a curing step.

As a result, the physical strength of the upper portion of the fillet 9 is increased, and even if the pitch of the connection terminals is narrowed, the semiconductor device can be manufactured with high reliability, which contributes to high-density mounting of semiconductor elements. .

[0013]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.

(First Embodiment) FIG. 1 shows a semiconductor device manufactured according to the present embodiment. Figure 1 (a)
FIG. 6 is a plan view of the semiconductor device according to the present embodiment. FIG. 1B shows XX in the semiconductor device of FIG.
It is a cross-sectional view of ', showing a mounting mode of the semiconductor element 1. As shown in FIG. 1B, the mounting form of the semiconductor device according to the present embodiment is the same as that of the above-described conventional technique. As the substrate 2, a ceramic substrate, a glass epoxy substrate, a polyimide substrate, a liquid crystal polymer substrate, an arib substrate or the like is used. The bump electrode 3 is a two-step bump electrode and is made of gold (Au).
Is used for the material. The conductive adhesive 4 is a mixture of a conductive filler in a thermoplastic resin. A shoulder portion 10 is formed on the fillet 9 made of the sealing resin 6. The shoulder portion 10 refers to a protruding portion formed on the fillet 9 by the sealing resin 6.

Next, the manufacturing process of the semiconductor device according to the present embodiment will be described with reference to FIGS. The semiconductor element 1 is mounted on the substrate 2, and the temporary fixing resin 5 and the conductive adhesive 4 are mounted.
The process is the same as the conventional technique until it is cured by heating. Here, as a device used for heating, a reflow furnace, a static reflow furnace, an oven furnace, or the like can be used. In this way, by reinforcing the semiconductor element 1 and the substrate 2 with the temporary fixing resin 5, the protruding electrodes 3 can be formed even in the subsequent steps.
The electrode 8 and the electrode 8 can be stably connected.

Further, a sealing resin 6 is filled between the semiconductor element 1 and the substrate 2. Here, as shown in FIG. 2A, the liquid sealing resin 6 is applied to the peripheral edge of the semiconductor element 1 and then returned to atmospheric pressure to inject the sealing resin 6 (see FIG. 2A). (Not shown) or a liquid sealing resin 6 is applied to the peripheral edge of the semiconductor element 1 under atmospheric pressure as shown in FIG. 2 (a), and then reduced in pressure as shown in FIG. 2 (b). Device 1
The environment in which the semiconductor device is placed inside the device using
The pressure is reduced, and then the pressure is returned to atmospheric pressure, so that the sealing resin 6 is injected between the semiconductor element 1 and the substrate 2. When the sealing resin 6 is injected, if the temperature of the sealing resin 6 is lowered, the injection performance is improved and the required time is shortened. In addition, here, the sealing resin 6 is formed by the reduced pressure injection method.
However, the side flow method may also be used.

From the above, as shown in FIG.
Although the encapsulating resin 6 is uncured, a semiconductor device in almost the final form can be obtained. Next, this semiconductor device is placed in a pressure curing device 13 shown in FIG. 2D, and this is covered with a heat resistant film 14 such as a polyphenylene sulfide film or a polyimide film. Next, a gas such as air or nitrogen is fed into the pressure curing device 13 from the supply valve 15 to increase the pressure applied to the semiconductor device. The heater 16 pressurizes the semiconductor device from above and the sealing resin 6 is applied by the heater 16. Heat cure. As a result, for example, as shown in FIG. 2E, a semiconductor device in which the shoulder portion 10 is formed on the fillet 9 is obtained.

Further, here, by pressing the semiconductor device from above, the encapsulating resin 6 can be heated and cured while keeping the connection portion of the conductive adhesive 4 in a stable state. Furthermore, if a fast-curing resin is used as the sealing resin 6, it can be cured in a short time of, for example, a temperature of 150 to 160 ° C. for about 5 minutes, which contributes to an increase in production efficiency.

In this embodiment, the shape of the fillet 9 is adjusted by appropriately adjusting the pressure applied to the semiconductor device, the thickness of the film 14, or the amount of the sealing resin 6.
Can be changed. The method for forming the fillet 9 will be described in detail below with reference to FIGS. 3 and 4.

First, in order to form the fillet 9 having a small fillet width 9a, the pressure applied to the semiconductor device through the film 14 is increased as shown in FIG. As shown, the film 14 is made thin so that it loses rigidity and is attached to the semiconductor element 1 side. On the other hand, in order to form the fillet 9 having a large fillet width 9a, the pressure applied to the semiconductor device is reduced as shown in FIG. 3B, or the film 14 is formed as shown in FIG. 3D. Is thickened to generate rigidity so as to be separated from the semiconductor element 1 side.

Here, as shown in FIG. 4A, the film 14 is brought into contact only with the upper portion of the fillet 9, and the sealing resin 6 does not exist in the region formed between the semiconductor device and the film 14. When the voids are formed, the sealing resin 6 moves along the film 14 and the shoulder portion 10
Is formed, and the angle is also 180 degrees or less, and the upper portion of the fillet 9 is thickened. Further, as shown in FIG. 4B, when the film 14 is brought into contact with only the lower portion of the fillet 9, the shoulder portion 10 can be formed by the same action. As shown in FIG. 4C, the fillet 9 may be formed with two or more shoulder portions 10.

According to the present embodiment, since the fillet 9 has the shoulder portion 10, the thickness of the upper portion of the fillet 9 is increased, the physical strength of that portion is increased, and the occurrence of cracks is eliminated. Therefore, even if the pitch of the connection terminals is narrowed, it is possible to manufacture a semiconductor device with high reliability, which contributes to high-density mounting of semiconductor elements.
Further, the manufactured semiconductor device also has high physical strength at the fillet 9 portion, and has excellent temperature cycle characteristics and moisture resistance characteristics.

(Second Embodiment) In the present embodiment,
CSP attracting attention as a small package of the present invention
An example applied to (Chip Scale Package) is shown. FIG. 5A is a plan view of the CSP according to this embodiment, and a plurality of semiconductor elements 1 are formed on the surface thereof. FIG. 5B is a cross-sectional view taken along the line YY ′ in the semiconductor device of FIG. As shown in FIG. 5B, the mounting form of each semiconductor element 1 is the same as that of the first embodiment described above, and therefore the description of the common parts will be omitted. Reference numeral 11 denotes a land, which functions as a terminal for electrical connection after cutting into individual elements. The land 11 is the electrode 8 and the substrate 2.
It is electrically connected by the wiring inside. Land 11
Instead of, for example, solder or a conductive adhesive can be used.

In the present embodiment, except that a plurality of semiconductor elements are mounted on the same substrate and the substrates are collectively processed, and the individual semiconductor devices are cut at the end of the process,
A semiconductor device is manufactured similarly to the first embodiment.

In this embodiment, as shown in FIGS. 2A to 2C, a substrate on which a plurality of CSPs in which a sealing resin 6 is filled between the semiconductor element 1 and the substrate 2 are mounted is mounted. 2 is installed in a pressure curing device 13 shown in FIG. 6, and this is covered with a heat resistant film 14 such as a polyphenylene sulfide film or a polyimide film. Next, a gas is sent from the supply valve 15 into the pressure curing device 13 to increase the pressure applied to the CSP, and the sealing resin 6 is heated and cured by the heater 16 while uniformly pressing the CSP from above. In the process of heat curing, the fillet 9 is formed similarly to the first embodiment. After that, it is cut into individual semiconductor devices with a normal dicing saw.

According to the present embodiment, the same effect as that of the first embodiment can be obtained, and since a plurality of semiconductor devices can be collectively processed by the CSP, the production quantity can be increased and the manufacturing cost can be reduced. Become.

Although the temporary fixing resin 5 is used in the above-described first and second embodiments, the semiconductor element 1 is used as the substrate 2.
A resin other than the temporary fixing resin 5 may be used as long as it is firmly adhered to. Although the conductive adhesive 4 is used for the electrical connection between the semiconductor element 1 and the substrate 2, solder bonding or metal bonding may be used.

In the first and second embodiments described above, the thickness of the film 14 is preferably in the range of 25 to 100 μm. If it is less than 25 μm, the strength of the film may be insufficient, and defects such as film breakage may occur. If the thickness exceeds 100 μm, the rigidity of the film 14 becomes excessive, and the action of the semiconductor device or the CSP due to the pressurization from above cannot be obtained, and the formation of the fillet 9 may be incomplete. The pressure applied to the semiconductor device or CSP is preferably in the range of 5 to 200 kPa. If it is less than 5 kPa, the action due to the pressure may not be obtained, and if it exceeds 200 kPa, the semiconductor element 1 may be damaged. Further, the amount of the sealing resin 6 is 15 to 20 mg when the semiconductor element 1 is 1 cm square and the gap between the semiconductor element 1 and the substrate 2 is 60 to 70 μm. Further, it is preferable that the surface portion of the film 14 that comes into contact with the semiconductor device or the CSP is coated with a release agent and subjected to a release treatment. As a result, after the sealing resin 6 is cured, the film 14 can be easily removed to improve the production efficiency and prevent the shape of the upper portion of the fillet 9 from becoming excessively large.

Further, in the above-described first and second embodiments, the gas is fed into the pressure curing device 13 so that the pressure in the upper region of the film 14 exceeds the atmospheric pressure, and the semiconductor device or the CSP is operated. Although the pressure is applied to the inside of the substrate, the inside of the region covered with the film 14 may be exhausted from the back surface side of the substrate by using a suitable vacuum device. As a result, the time required to reach the predetermined pressurization state is shortened, and the work can be performed in a stable state of the substrate 2, further improving the productivity.

It should be noted that no gas is sent in, the pressure in the upper region of the film 14 is kept at atmospheric pressure, and the inside of the region covered with the film 14 is further subjected to a substrate using a suitable vacuum device. Exhaust from the back side of the film 14
The pressure may be lower than that in the upper region. As a result, pressure is applied from above the semiconductor device or CSP, the same effects as those of the first and second embodiments described above are obtained, and the work can be performed in a stable state of the substrate 2. And productivity is further enhanced.

(Third Embodiment) FIGS. 7A and 7B.
7A and 7B show steps of thinning the semiconductor device according to the first embodiment, and FIGS. 7C and 7D show steps of thinning the CSP according to the second embodiment. As described above, in the present embodiment, a thin semiconductor device or CSP is manufactured by polishing from the semiconductor element 1 side by, for example, a grinder.

Here, since the physical strength of the fillet 9 portion is increased, the semiconductor element 1 is less likely to be damaged during polishing, and a thin semiconductor device or CSP can be stably manufactured.

[0033]

As described above, according to the present invention,
The physical strength of the upper portion of the fillet 9 is increased, and even if the pitch of the connection terminals is narrowed, the semiconductor device can be manufactured with high reliability, which contributes to high-density mounting of semiconductor elements.

Further, according to the present invention, a semiconductor device having excellent temperature cycle characteristics and moisture resistance characteristics can be manufactured.

[Brief description of drawings]

FIG. 1 is a configuration diagram of a semiconductor device according to a first embodiment of the present invention ((a): plan view, (b): sectional view)

FIG. 2 is a sectional view showing a manufacturing process of the semiconductor device according to the first embodiment of the present invention.

FIG. 3 is a schematic diagram showing a process of forming a fillet portion of the semiconductor device according to the first embodiment of the present invention.

FIG. 4 is a schematic view showing a process of forming a shoulder portion of a fillet portion according to the first embodiment of the present invention.

FIG. 5 is a configuration diagram of a CSP according to a second embodiment of the present invention ((a): a plan view, (b): a sectional view of an individual semiconductor device).

FIG. 6 is a sectional view of a pressure curing device according to a second embodiment of the present invention.

FIG. 7 is a cross-sectional view showing a manufacturing process of a thin semiconductor device and a CSP.

FIG. 8 is a configuration diagram of a semiconductor device according to a conventional technique.
((A): plan view, (b): sectional view)

FIG. 9 is a sectional view showing a manufacturing process of a semiconductor device according to a conventional technique.

FIG. 10 is a cross-sectional view showing an example of the configuration of a semiconductor device according to a conventional technique.

[Explanation of symbols]

1 Semiconductor element 2 substrates 3 protruding electrodes 4 Conductive adhesive 5 Temporary fixing resin 6 Sealing resin 7, 8 electrodes 9 fillets 9a fillet width 10 Shoulder part 11 lands 12 Pressure reducing device 13 Pressure curing device 14 films 15 Supply valve 16 heater 17 Resin coating device 18 cracks

Continued front page    (72) Inventor Minehiro Itagaki             1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric             Sangyo Co., Ltd. (72) Inventor Osamu Shibata             5-5-15 Nishinakajima, Yodogawa-ku, Osaka-shi, Osaka               Panasonic Engineering Co., Ltd.             Within (72) Inventor Ryuichi Saito             Pana, 3-6-21, Minami-Shinagawa, Shinagawa-ku, Tokyo             Sonic Engineering Co., Ltd. (72) Inventor Akifumi Mitsuda             Pana, 3-6-21, Minami-Shinagawa, Shinagawa-ku, Tokyo             Sonic Engineering Co., Ltd. F-term (reference) 4M109 AA01 BA04 CA04 DA05 EA01                 5F061 AA01 BA04 CA04 DB01

Claims (18)

[Claims] 1. A semiconductor element is flip-chip mounted on a substrate, a sealing resin is filled between the substrate and the semiconductor element, and a shoulder portion is formed at a fillet portion of the sealing resin. A semiconductor device characterized by the above. 2. A method of manufacturing a semiconductor device, comprising a step of flip-chip mounting a semiconductor element on a substrate, the method comprising the step of mounting the semiconductor element on the substrate, and between the substrate and the semiconductor element. A step of filling a sealing resin,
And a step of curing the encapsulating resin to form a shoulder portion on the fillet portion of the encapsulating resin. 3. The semiconductor device is covered with a film so as to form a void in which the sealing resin does not exist in a region formed between the semiconductor device and the semiconductor device in the uncured state. The method of manufacturing a semiconductor device according to claim 2, wherein a shoulder portion is formed at a fillet portion of the sealing resin. 4. The method of manufacturing a semiconductor device according to claim 3, wherein a shoulder portion is formed at a fillet portion of the sealing resin by applying pressure to the semiconductor device from above the film. 5. The step of curing the sealing resin to form a shoulder portion in the fillet portion of the sealing resin is performed in a device capable of applying a pressure to the inside, and a gas is fed into the device. Then, the semiconductor device has 5 to 200 kPa.
The method of manufacturing a semiconductor device according to claim 4, wherein the pressure is applied. 6. The method of manufacturing a semiconductor device according to claim 5, wherein a pressure is applied to the semiconductor device and the inside of a region covered with a film of the semiconductor device is depressurized. 7. The thickness of the film is 25 to 100 μm.
7. The method for manufacturing a semiconductor device according to claim 2, wherein: 8. The method of manufacturing a semiconductor device according to claim 2, wherein at least a surface of the film, which is in contact with the semiconductor device, has a release treatment. 9. The method for manufacturing a semiconductor device according to claim 2, wherein the semiconductor device is thinned by curing the sealing resin and then polishing from the semiconductor element side. 10. A plurality of semiconductor elements are flip-chip mounted on a substrate, a sealing resin is filled between the substrate and the semiconductor element, and a shoulder portion is formed at a fillet portion of the sealing resin. C characterized by being
SP. 11. A method of manufacturing a CSP, comprising a step of flip-chip mounting a semiconductor element on a substrate, the step of mounting the semiconductor element on the substrate, and sealing between the substrate and the semiconductor element. A method of manufacturing a CSP, comprising: a step of filling a sealing resin; and a step of curing the sealing resin to form a shoulder portion at a fillet portion of the sealing resin. 12. The CSP is covered with a film so that a void in which the sealing resin does not exist is formed in a region formed between the CSP and the CSP in a uncured state. The CSP according to claim 11, wherein a shoulder portion is formed at a fillet portion of the sealing resin.
Manufacturing method. 13. The method of manufacturing a CSP according to claim 12, wherein a shoulder portion is formed at a fillet portion of the sealing resin by applying pressure to the CSP from above the film. 14. The step of curing the sealing resin so as to form a shoulder portion at the fillet portion of the sealing resin is performed in a device capable of applying a pressure to the inside, and a gas is sent into the device. The C of claim 13, wherein a pressure of 5 to 200 kPa is applied to the CSP.
SP manufacturing method. 15. The method of manufacturing a CSP according to claim 14, wherein a pressure is applied to the CSP and the inside of a region covered with the CSP is depressurized. 16. The film has a thickness of 25 to 100 μm.
It is m, The manufacturing method of CSP in any one of Claims 12-15 characterized by the above-mentioned. 17. At least the CSP of the film
The surface of the region that comes into contact with the mold is subjected to a mold release treatment, the CS according to any one of claims 12 to 16.
Manufacturing method of P. 18. The method of manufacturing a CSP according to claim 11, wherein the CSP is thinned by curing the sealing resin and then polishing from the semiconductor element side.