JP2003151994A - Method for manufacturing thin-film transistor, method for manufacturing active matrix substrate, and method for manufacturing liquid crystal display panel - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce connection resistance between a source/drain region and an electrode by forming a high concentration contact region in the source/drain region by the minimum number of masks for realizing a manufacturing method capable of restoring the deterioration of the crystalline of the source/drain region, after impurity introduction also by low-temperature heat treatment. SOLUTION: After forming contact holes 111a and 111b on an interlayer dielectric 111 formed on the surface side of a source area 162 and a drain area 163, a barrier layer 240 is formed on the surface side of the interlayer dielectric. After that, heavily-doped impurity is introduced from the contact holes 111a and 111b via the barrier layer 240 positioned at their bottoms to form high concentration contact regions 162a and 163a. After this, in a state to keep the contact holes 111a and 111b at the bottom, a source electrode and a drain electrode are formed.

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a method of manufacturing a thin film transistor, a method of manufacturing an active matrix substrate, and a method of manufacturing a liquid crystal display panel.

[0002]

2. Description of the Related Art In the case of forming a thin film transistor (hereinafter referred to as a TFT) suitable for pixel switching on an active matrix substrate of a liquid crystal display panel, conventionally, as shown in FIG. Quartz substrate 601
A silicon oxide film 606 is formed on the surface of the. Next, after forming a non-doped polycrystalline silicon film on the surface side of the silicon oxide film 606, it is patterned to form a polycrystalline silicon film 604. Next, a silicon oxide film 608 (gate insulating film) is formed on the surface side of the polycrystalline silicon film 604, and then a gate electrode 609 is formed on the surface side of the silicon oxide film 608.

Next, as shown in FIG. 13B, low concentration phosphorus ions are ion-implanted using the gate electrode 609 as a mask to form low concentration source / drain regions 604a in the polycrystalline silicon film 604. Here, the portion where the impurities are not implanted becomes the channel formation region 607.

Next, as shown in FIG. 13C, the periphery of the gate electrode 609 is covered with a mask 645, and in this state,
Ion implantation of high concentration phosphorus ions. As a result, of the low concentration source / drain regions 604a, the mask 64
The portions not covered with 5 become the high-concentration contact regions 642a and 643a, while the portions covered with the mask 645 show the low-concentration source / drain regions 642b, 642b.
It becomes 643b.

Next, as shown in FIG. 13D, after forming an interlayer insulating film 611 on the surface side of the gate electrode 609,
Contact holes 611a and 611b are formed, and the high concentration contact region 6 is formed through these contact holes.
When the source electrode 613 and the drain electrode 612 are conductively connected to 42a and 643a, respectively, the LDD structure T
The FT is manufactured.

[0006]

However, in the conventional method of manufacturing a TFT, in the step shown in FIG. 13C, the periphery of the gate electrode 609 is formed for the purpose of forming only the high-concentration contact regions 642a and 643a. Since it is necessary to form the mask 645 that covers the mask, there is a problem that the number of masks increases.

Therefore, as described below, a method of forming a high-concentration contact region by utilizing a contact hole formed in an interlayer insulating film has been devised. In this method, first, as shown in FIG.
After forming a silicon oxide film 606 on the surface of No. 1, a polycrystalline silicon film 604 is formed. Further, a silicon oxide film 608 (gate insulating film) is formed on the surface side of the polycrystalline silicon film 604. Next, a gate electrode 609 is formed on the surface side of the silicon oxide film 608.

Next, as shown in FIG. 14B, low concentration phosphorus ions are ion-implanted using the gate electrode 609 as a mask to form low concentration source / drain regions 604a. The portion where the impurities are not implanted becomes the channel formation region 607.

Next, as shown in FIG. 14C, after forming an interlayer insulating film 611 on the surface side of the gate electrode 609,
Contact holes 611a and 611b are formed therein. In this state, the contact holes 611a and 611b
High concentration phosphorus ions are implanted into the low concentration source / drain region 604a via the
2a and 633a are formed. The low concentration source / drain region 632 is a portion where high concentration phosphorus ions are not implanted.
b, 633b.

Forming the LDD-structured TFT in this manner has the advantage that a mask whose purpose is only to form the high-concentration contact regions 632a and 633a can be omitted. However, in this method, since the impurity ions are directly implanted into the polycrystalline silicon film 604 when the high concentration impurity ions are implanted through the contact holes 611a and 611b, it is necessary to reduce the implantation energy during the ion implantation. is there. Here, if the implantation energy at the time of ion implantation is made small, the beam current at the time of ion implantation becomes small, it takes a long time to implant impurity ions at a high concentration, and there is a problem that productivity is reduced. In addition, the peak of the impurity concentration after the ion implantation is inside the low-concentration source / drain region 604a, and the crystallinity is greatly deteriorated in such a portion. Therefore, unless heat treatment is performed at a high temperature, the crystallinity cannot be recovered, which is not suitable for a low temperature process.

In view of the above problems, the object of the present invention is to
The high-concentration contact regions are formed in the source / drain regions without using a mask for the purpose of forming the high-concentration contact regions, and in the impurity introduction step,
It is to realize a method of manufacturing a TFT having high productivity and a method of manufacturing an active matrix substrate for a liquid crystal display panel.

Another object of the present invention is to provide a method of manufacturing a TFT capable of recovering the deterioration of crystallinity in the source / drain regions after introducing impurities even by low temperature heat treatment, and an active matrix substrate for a liquid crystal display panel. It is to realize the manufacturing method. Furthermore, the subject of the present invention is
A barrier layer used when forming a high-concentration contact region is used to realize a TFT in which the connection resistance between a source / drain region and a source / drain electrode is reduced, and a manufacturing method thereof.

[0013]

In order to solve the above problems, the present invention provides a channel forming region in which a channel can be formed between a source region and a drain region and a gate insulating film in the channel forming region. And a gate electrode facing each other, and a method of manufacturing a thin film transistor in which a drain electrode is conductively connected to at least the drain region,
The method includes a step of forming a barrier layer on the drain region and a high-concentration impurity introducing step of introducing a high-concentration impurity into the drain region through the barrier layer. The peak of the impurity distribution is located on the side of the barrier layer.

Further, the barrier layer is characterized by comprising any one of a titanium nitride layer, an indium tin oxide layer, an aluminum layer, an aluminum alloy layer, a molybdenum layer, a tungsten layer, and a chromium layer.

Furthermore, the barrier layer on the drain region is removed after the step of introducing the high-concentration impurity, and then the drain electrode is formed.

Further, the drain electrode is arranged on the drain region via the barrier layer.

Further, the method for manufacturing an active matrix substrate of the present invention is characterized in that the drain electrode of the thin film transistor manufactured by any one of the above methods for manufacturing a thin film transistor is formed as a pixel electrode.

The method for manufacturing a liquid crystal display panel of the present invention is characterized in that the drain electrode of the thin film transistor manufactured by any one of the above methods for manufacturing a thin film transistor is formed as a pixel electrode.

Further, according to the present invention, a channel forming region capable of forming a channel between the source region and the drain region and a gate electrode facing the channel region with a gate insulating film interposed therebetween are provided. The drain region has a high-concentration contact region in which the source electrode and the drain electrode are conductively connected through a contact hole of an interlayer insulating film formed on the surface side of these regions.
In the manufacturing method of T, a barrier layer forming step of forming a contact hole in the interlayer insulating film formed on the surface side of the source region and the drain region and then forming a barrier layer on the surface side of the interlayer insulating film; It is characterized by performing a high-concentration impurity introduction step of forming a high-concentration contact region by introducing a high-concentration impurity into the source region and the drain region through the barrier layer located at the bottom.

That is, in the high-concentration impurity introduction step for forming the high-concentration contact region, an impurity is implanted from the contact hole of the interlayer insulating film, and a barrier layer is formed at least on the bottom surface of the contact hole before implanting the impurity. It has a feature in it.

In the present invention, the structure having the high-concentration contact regions in the source region and the drain region means not only the structure in which a part of the source region and the drain region is the high-concentration contact region but also the source region and the drain region. It also means a structure in which the whole is formed as a high concentration region, and the source region and the drain region themselves are high concentration contact regions.

The TFT according to the present invention can be constructed as a top gate type TFT in which the gate electrode faces the channel formation region via the gate insulating film on the upper side thereof. On the contrary, the TFT according to the present invention can also be configured as a bottom gate type TFT in which the gate electrode faces the channel formation region on the lower layer side via the gate insulating film.

In the present invention, a titanium nitride layer (hereinafter referred to as TiN
It is called x layer. ), Indium tin oxide layer (hereinafter referred to as ITO
It is called a layer. ), Aluminum layer, aluminum alloy layer,
The molybdenum layer, the tungsten layer, or the chromium layer can be used as a barrier layer as a single layer or in a multilayer structure.

In the present invention, the barrier layer may be removed after the high-concentration impurity introduction step, and then the source electrode and the drain electrode may be formed.

On the other hand, from the viewpoint of reducing the connection resistance between the source or drain electrode and the high-concentration contact region, after the high-concentration impurity introduction step is performed, the barrier layer is formed into a contact hole. The source electrode or the drain electrode can be conductively connected to the high-concentration contact layer through the barrier layer left at the bottom and left at the bottom. A TFT manufactured by such a method has a channel forming region capable of forming a channel between a source region and a drain region, and a gate electrode facing the channel region with a gate insulating film interposed therebetween. The drain region is provided with a high-concentration contact region in which the source electrode and the drain electrode are conductively connected through the contact hole of the interlayer insulating film formed on the surface side of these regions, and the barrier layer is formed at the bottom of the contact hole. Have. Therefore, the source electrode and the drain electrode have a structure in which they are conductively connected to the source region and the drain region through the barrier layer.

From the viewpoint of reducing the connection resistance between the drain electrode (ITO layer) and the high-concentration contact region (silicon film), after the high-concentration impurity introduction step is performed, at least the barrier layer is drained. It is also possible to leave it at the bottom of the contact hole on the region side, and conductively connect the drain electrode made of the ITO layer to the high-concentration contact layer in the drain region through the barrier layer remaining at this bottom. The TFT manufactured by such a method has a structure in which the drain electrode made of the indium tin oxide layer is conductively connected to the high-concentration contact layer in the drain region via the barrier layer.

According to the method of manufacturing a TFT of the present invention, a pixel TFT is formed on an active matrix substrate of a liquid crystal display panel.
Suitable for forming.

[0028]

In the present invention, in the high-concentration impurity introduction step for forming the high-concentration contact region, the impurity is implanted from the contact hole of the interlayer insulating film, and the barrier layer is formed at least on the bottom surface of the contact hole before implanting the impurity. Is formed. Therefore, it is possible to introduce a high concentration impurity into only a predetermined region of the source region and the drain region without forming a mask. Further, since the impurities are implanted through the barrier layer, the implantation energy can be set to be large, so that the introduction rate of the impurities can be increased. Furthermore, since the impurities are implanted into the source / drain region through the barrier layer, the peak of the impurity distribution does not occur inside the source / drain region but on the side of the barrier layer with respect to the boundary between the source / drain region and the barrier layer. The implantation energy can be set so that it is located at. Therefore, the crystallinity deteriorates at the peak portion of the impurity distribution, but the crystallinity does not significantly deteriorate in the source / drain regions.
The crystallinity of the source / drain regions can be recovered. Therefore, according to the present invention, a high performance TFT can be manufactured by a low temperature process.

After the high-concentration impurity introduction step, the barrier layer is left at the bottom of the contact hole, and the source electrode or the drain electrode is conductively connected to the high-concentration contact layer through the barrier layer remaining at the bottom. Then, when a high-concentration impurity is implanted into the source / drain regions through the barrier layer, mutual migration of atoms occurs between the silicon film and the barrier layer through the boundary portion. Therefore, the connection resistance is reduced due to the mixing of atoms generated between the barrier layer and the source / drain regions. On the other hand, the connection resistance between the barrier layer made of these metal materials and the material forming the source electrode or the drain electrode is small. Therefore,
By connecting the source electrode or the drain electrode to the high-concentration contact region (silicon film) via the barrier layer, the connection resistance at this connection portion can be reduced.

After the high-concentration impurity introduction step, the barrier layer is left at least at the bottom of the contact hole on the drain region side, and the drain electrode made of the ITO layer is drained through the barrier layer remaining at this bottom. When conductively connected to the high-concentration contact layer in the region, the drain electrode (ITO layer) and the high-concentration contact region (silicon film) are conductively connected via the barrier layer. Therefore, the drain electrode (ITO layer) and the high-concentration contact region (silicon film)
Since and are not directly conductively connected, the connection resistance between them can be greatly reduced.

[0031]

Embodiments of the present invention will be described with reference to the accompanying drawings.

Example 1 Any TFT (thin film transistor) described below is manufactured as a pixel TFT on an active matrix substrate of a liquid crystal display panel. Therefore, the configuration of an active matrix substrate using the top gate type thin film transistor described in the first, second and third embodiments will be described with reference to FIG.

FIG. 1 is an enlarged view of one of the pixel regions defined by signal lines and scanning lines in an active matrix substrate for a liquid crystal display panel. In the figure, in an active matrix substrate 1 for a liquid crystal display panel, a pixel area 4 is divided by a signal line 2 and a scanning line 3, and in this pixel area 4, a source electrode extended from the signal line 2 is formed. The scan line 3 and the source region where S is conductively connected
A pixel thin film transistor (TFT) including a gate electrode G extending from Here, a part of the ITO electrode 6 covering the pixel region 4 is the drain electrode D of the TFT. Each cross section of the TFT used in the description of Examples 1 and 2 below corresponds to the XX 'cross section in FIG.

FIG. 2 is a vertical sectional view showing the structure of the TFT according to the first embodiment, and this TFT corresponds to the pixel thin film transistor shown in FIG.

In FIG. 2, on the surface side of the glass substrate 101 which is a transparent insulating substrate, tantalum, aluminum,
Alternatively, the gate electrode 109 made of chromium, the gate insulating film 108, and the source region 132 and the drain region 1 formed in self-alignment with the gate electrode 109.
33, these source region 132 and drain region 13
3 and a channel formation region 107 for forming a channel between them. The TFT 100 is of a top gate type in which the gate electrode 109 faces the channel formation region 107 on the upper layer side thereof via the gate insulating film 108. The TFT 100 is an N-channel type in which N-type impurities are introduced into the source region 132 and the drain region 133.

The TFT 100 has an LDD structure, and the source region 132 and the drain region 133 have:
Contact holes 111a and 111 of the interlayer insulating film 111
High-concentration contact regions 132a, 1 are formed in regions corresponding to b.
33a, and a low-concentration source region 132b and a low-concentration drain region 133b at a position facing the end of the gate electrode 109. Low concentration source region 132b
The peak concentration of phosphorus ions in the low-concentration drain region 133b is about 1 × 10 ¹⁸ cm ⁻³ to about 1 × 10 ¹⁹ cm ^−3.
Up to the high concentration contact regions 132a, 1
The phosphorus ion concentration in 33a is about 1 × 10 ²⁰ cm ^-3.
Is.

The drain electrode 112 (pixel electrode) made of the ITO layer and the source electrode 113 made of the aluminum alloy layer are conductively connected to the high-concentration contact regions 132a, 133a through the contact holes 111a, 111b.

Since the TFT 100 having such a structure is formed by the manufacturing method described below, the productivity is high and the deterioration of the crystallinity caused when the impurities are introduced into the source region 132 and the drain region 133 is not generated. It has been fully restored by low temperature heat treatment.

Before describing the method of manufacturing the TFT 100 of this example, the structure of the ion implantation apparatus used in the impurity introducing step will be described.

FIG. 3 is a schematic configuration diagram of an ion implantation apparatus used in the method of manufacturing the TFT of this example. Ion implanter 5
At 0, an extraction electrode 53 for extracting impurity ions 52 from the plasma source 51 and an acceleration electrode 54 for accelerating the impurity ions 52 to have a predetermined energy are provided. Extraction electrode 53 and acceleration electrode 54
A predetermined voltage is applied to each of the source and the impurity ions 52 extracted from the plasma source 51.
Can be implanted into the polycrystalline silicon film formed on the surface side of the glass substrate 55. Ion implanter 50
Does not include a mass separation part for performing mass separation on ions generated from the dopant gas, and it is possible to implant all ions generated from the dopant gas into the polycrystalline silicon film without mass separation. It has become.

4A to 4F are process cross-sectional views showing a method of manufacturing the TFT of this example.

First, as shown in FIG. 4A, a silicon oxide film 106 having a film thickness of about 2000 angstrom is formed on the surface of the glass substrate 101. Glass substrate 101
This is to prevent the influence of metal ions contained in. Next, after forming a non-doped polycrystalline silicon film having a film thickness of about 500 angstroms on the surface side of the silicon oxide film 106, it is patterned to form a polycrystalline silicon film 104. Such polycrystalline silicon film 10
4 is, for example, a solid phase growth method or a low temperature low pressure CVD method (LP
It is formed by a low temperature film forming method such as a CVD method. Also,
The polycrystalline silicon film 104 may be formed by polycrystallizing an amorphous silicon film by a laser annealing method.

Next, a silicon oxide film 108 (gate insulating film) having a film thickness of about 1200 angstrom is formed on the surface side of the polycrystalline silicon film 104. Next, a metal layer having a small electric resistance, such as aluminum, chromium, or tantalum, is formed on the surface side of the silicon oxide film 108 by a sputtering method or the like, and then patterned to form a gate having a film thickness of about 6000 angstroms. The electrode 109 is formed.

Next, as shown in FIG. 4 (b), by using the ion implantation apparatus 50 shown in FIG. 3, comprises a PH ₃ 5%,
All the ions generated from the mixed gas, the balance of which is hydrogen gas, are ion-implanted into the polycrystalline silicon film 104 with energy of about 80 keV using the gate electrode 109 as a mask without mass separation. Note that helium gas may be used instead of hydrogen gas. Here, the amount of impurities introduced is 1 × 10 in terms of the phosphorus ion dose.
The range is from ¹³ / cm ² to 1 × 10 ¹⁴ / cm ² .
As a result, the polycrystalline silicon film 104 has a low concentration source / drain region 104a having a phosphorus ion concentration peak in the range of 1 × 10 ¹⁸ cm ⁻³ to 1 × 10 ¹⁹ cm ^−3.
Is formed. Then, the ion implanter 5 shown in FIG.
0 is used to implant all the ions generated from the doping gas made of pure hydrogen gas, and the defects contained in the low concentration source / drain region 104a are removed by hydrogen. This is because the implantation of hydrogen ions terminates the asymmetric bonds in the silicon film so that the low concentration region can be activated by the low temperature heat treatment. In this case,
Hydrogen ion concentration peak is from 6 × 10 ¹⁸ cm ^-3 to 1 ×
The range is up to 10 ²⁰ cm ^-3 . The portion where the impurities are not implanted becomes the channel formation region 107.

Next, as shown in FIG. 4C, after forming an interlayer insulating film 111 on the surface side of the gate electrode 109,
Contact holes 111a and 111b are formed therein.

Further, in this example, as shown in FIG. 4D, a thin barrier layer 140 (for example, having a film thickness of about TiNx) is formed on the surface side of the interlayer insulating film 111 (the entire surface of the glass substrate 101). 1000 Å barrier layer) is formed. As a result, the barrier layer 140 becomes the interlayer insulating film 11
1 as well as the contact holes 111a, 1
It is also formed on the bottom of 11b (barrier layer forming step).

Next, as shown in FIG. 4E, high-concentration impurities are introduced with the barrier layer 140 being formed inside the contact holes 111a and 111b. At this time, impurities are implanted into the entire surface of the glass substrate 101 without using a mask (high-concentration impurity introduction step).

The ion implantation apparatus 50 shown in FIG. 3 is also used in this high-concentration impurity introduction step. That is, P
Approximately 80% of all ions generated from a mixed gas containing 5% of H ₃ and the balance being hydrogen gas without mass separation.
Ion implantation is performed with an energy of keV. Conditions such as the ion acceleration voltage at this time are set so that the peak portion of the impurity concentration is located on the barrier layer 140 side with respect to the boundary portion between the source region 132 and the drain region 133 and the barrier layer 140. The amount of impurities introduced is about 1 × 10 ¹⁵ / cm ² in terms of phosphorus ion dose.

As a result, the contact holes 111a, 1
From 11b, a high-concentration impurity is selectively implanted through the barrier layer 140 located at the bottom thereof. Therefore, in the source region 132 and the drain region 133, the regions corresponding to the contact holes 111a and 111b are
High concentration contact regions 132a and 133a are formed. The other portions become the low concentration source region 132b and the low concentration drain region 133b.

Next, the implanted impurities are subjected to a low temperature heat treatment at about 300 ° C. for 1 hour in a nitrogen atmosphere.

Then, as shown in FIG. 4F, after the barrier layer 140 is completely removed, the ITO layer (pixel electrode) is formed.
And a source electrode 113 made of an aluminum alloy layer are sequentially formed.

As described above, in the method of manufacturing the TFT 100 of this example, the interlayer insulating film 1 is formed in the high-concentration impurity introduction step.
Since the impurities are selectively implanted through the contact holes 111a and 111b formed in 11, the impurities can be introduced only into a predetermined region without forming a mask for that purpose.

Further, in the high concentration impurity introducing step,
Impurities are not directly implanted into the low concentration source / drain regions 104a, but are implanted through the barrier layer 140. Here, since the ion acceleration voltage and the like are set so that the peak of the impurity distribution is located inside the barrier layer 140, the crystallinity is lowered at the peak portion of the impurity concentration, but such a portion is a barrier. It exists inside the layer 140. Therefore, the crystallinity of the source region 132 and the drain region 133 is not significantly deteriorated. Therefore, even if heat treatment is not performed at a high temperature, a relatively low temperature (for example, about 300
By performing the heat treatment at (.degree. C.), the crystallinity of the source region 132 and the drain region 133 can be recovered, so that the entire manufacturing process can be performed in a low temperature process.

Furthermore, the low concentration source / drain region 1
Impurities are implanted into 04a through the barrier layer 140, so that the implantation energy can be set large. Therefore, since the beam current value can be set to a large value, the introduction speed of impurities can be increased. Therefore, according to the manufacturing method of this example, high-concentration impurities can be introduced in a short time, which is also advantageous in high productivity.

Moreover, since the barrier layer 140 need only be formed on the entire surface of the interlayer insulating film 111 and it is not necessary to pattern it, there is no disadvantage that the number of masks increases.

[Second Embodiment] FIG. 5 shows a TF according to a second embodiment.
It is a longitudinal cross-sectional view showing the structure of T. The TFT of this example
Since the TFT has basically the same configuration as the TFT of the first embodiment, the corresponding portions are denoted by the same reference numerals. Here, Example 1 is a coplanar type, and Example 2 is
Although staggered, any structure may be used as well within the scope of the present invention.

In FIG. 5, on the surface side of the glass substrate 101 which is a transparent insulating substrate, tantalum, aluminum,
Alternatively, for forming a channel between the gate electrode 109 made of chromium, the source region 162 and the drain region 163 formed in self-alignment with the gate electrode 109, and the source region 162 and the drain region 163. And a channel formation region 107. Here, the TFT 200 is of a top gate type in which the gate electrode 109 faces the channel formation region 107 with the gate insulating film 108 on the upper side thereof. Further, the TFT 200 is an N-channel type in which an N-type impurity is introduced into the source region 162 and the drain region 163.

Source region 162 and drain region 16
3 is the contact hole 111 of the interlayer insulating film 111.
a high-concentration contact region 1 in the region corresponding to a and 111b
62a, 163a, and the phosphorus ion concentration in these high-concentration contact regions 162a, 163a is about 1
It is × 10 ²⁰ cm ^-3 .

The drain electrode 112 (pixel electrode) made of the ITO layer and the source electrode 113 made of the aluminum alloy layer are conductively connected to the high concentration contact regions 162a, 163a through the contact holes 111a, 111b. At the bottoms of the holes 111a and 111b, thin barrier layers 240a and 2a made of a TiNx layer are formed.
40b (eg, a barrier layer having a thickness of about 1000 Å). Therefore, the source electrode 113 and the drain electrode 112 are conductively connected to the high-concentration contact regions 162a and 163a via the barrier layers 240a and 240b.

A low-concentration source region 162b having a film thickness of about 500 Å and a low-concentration drain region 163b having a film thickness of about 500 Å are provided at a position facing the end of the gate electrode 109, and TF is provided.
T200 has an LDD structure. The peak concentration of phosphorus ions in the low concentration source region 162b and the low concentration drain region 163b is about 1 × 10 ¹⁸ cm ⁻³ to about 1 × 1.
It is in the range of up to 0 ¹⁹ cm ^-3 . Here, a lower layer side source region 162c and a lower layer side drain region 163c having a film thickness of about 1000 Å are formed on the lower layer side of the low concentration source region 162b and the low concentration drain region 163b.

The top gate type TF having the above structure
Since T200 is manufactured by the following manufacturing method, it has high productivity as in the first embodiment, and the crystallinity deterioration that occurs when impurities are introduced into the source region 162 and the drain region 163 is low temperature heat treatment. It has been fully repaired. In addition, the source electrode 113 and the drain electrode 112, and the high-concentration contact regions 162a and 163a.
The connection resistance between and is small.

6A to 6D are process sectional views showing a method of manufacturing the TFT 200.

First, as shown in FIG. 6A, a silicon oxide film 106 having a thickness of about 2000 angstrom is formed on the surface of the glass substrate 101.

Next, after forming a non-doped polycrystalline silicon film having a film thickness of about 1000 angstrom, the undoped polycrystalline silicon film is patterned to form a lower polycrystalline silicon film 105.

Next, after forming a non-doped polycrystalline silicon film having a film thickness of about 500 angstrom, it is patterned to form an upper polycrystalline silicon film 104. The polycrystalline silicon films 104 and 105 are formed, for example, by a solid phase growth method or a low temperature low pressure CVD method (LPCVD).
Method) etc. In addition, the polycrystalline silicon film 1
04 and 105 may be formed by polycrystallizing an amorphous silicon film by a laser annealing method.

Next, a silicon oxide film 108 (gate insulating film) having a film thickness of about 1200 Å is formed on the surface side of the polycrystalline silicon film 104. Next, a metal layer having a small electric resistance, such as aluminum, chromium, or tantalum, is formed on the surface side of the silicon oxide film 108 by a sputtering method or the like, and then patterned to form a gate having a film thickness of about 6000 angstroms. The electrode 109 is formed.

Next, as shown in FIG. 6 (b), by using the ion implantation apparatus 50 shown in FIG. 3, comprises a PH ₃ 5%,
All the ions generated from the mixed gas, the balance of which is hydrogen gas, are ion-implanted into the polycrystalline silicon films 104 and 105 with energy of about 80 keV using the gate electrode 109 as a mask without mass separation. Note that helium gas may be used instead of hydrogen gas. here,
The amount of impurities introduced is 1 converted to the phosphorus ion dose.
It is in the range of × 10 ¹³ / cm ² to 1 × 10 ¹⁴ / cm ² . As a result, the polycrystalline silicon films 104 and 105 have phosphorus ion concentration peaks of 1 × 10 ¹⁸ cm ⁻³ to 1
Low-concentration source / drain regions 104a and 105a are formed in the range of up to × 10 ¹⁹ cm ^-3 . Then, using the ion implantation apparatus 50 shown in FIG. 2, all the ions generated from the doping gas composed of pure hydrogen gas are implanted, and the low concentration source / drain regions 104a, 10a
The defects contained in 5a are removed by hydrogen. In this case, the concentration peak of hydrogen ions is in the range of 6 × 10 ¹⁸ cm ⁻³ to 1 × 10 ²⁰ cm ⁻³ . The portion where the impurities are not implanted becomes the channel formation region 107.

Next, as shown in FIG. 6C, after forming an interlayer insulating film 111 on the surface side of the gate electrode 109,
Contact holes 111a and 111b are formed therein.

Further, in this example, a thin barrier layer 240 (for example, a barrier layer having a film thickness of about 1000 Å) made of a TiNx layer is formed on the surface side of the interlayer insulating film 111 (the entire surface of the glass substrate 101). Here, the barrier layer 240 is formed not only on the surface side of the interlayer insulating film 111 but also on the bottoms of the contact holes 111a and 111b (barrier layer forming step).

Next, as shown in FIG. 6D, a high-concentration impurity is introduced with the barrier layer 240 formed in the bottoms of the contact holes 111a and 111b. At this time, impurities are implanted into the entire surface of the glass substrate 101 without using a mask (high-concentration impurity introduction step).

The ion implantation apparatus 50 shown in FIG. 3 is also used in this high-concentration impurity introduction step. That is, P
Approximately 80% of all ions generated from a mixed gas containing 5% of H ₃ and the balance being hydrogen gas without mass separation.
Ion implantation is performed with an energy of keV. The conditions such as the acceleration voltage of the ions at this time are set so that the peak of the impurity distribution is located on the barrier layer 240 side. The amount of impurities introduced is approximately 1 × 10 6 in terms of phosphorus ion dose.
^{It is 15} / cm ² .

As a result, of the low concentration source / drain regions 104a and 105a, the contact hole 111 is formed.
High-concentration impurities are selectively introduced into the regions corresponding to a and 111b without using a mask to form high-concentration contact regions 162a and 163a. The other portions become the low concentration source region 162b and the low concentration drain region 163b.

Next, the implanted impurities are subjected to a low temperature heat treatment at about 300 ° C. for 1 hour in a nitrogen atmosphere.

Next, as shown in FIG. 6E, the barrier layer 2
40 is patterned to contact holes 11a, 1
Barrier layers 240a, 24 around the bottom of 11b and around it.
Leave 0b.

Thereafter, as shown in FIG. 5, a drain electrode 112 made of an ITO layer (pixel electrode) and a source electrode 113 made of an aluminum alloy layer are sequentially formed. As a result, the drain electrode 112 becomes the barrier layer 240b.
Conductively connected to the high concentration contact region 163a via
The source electrode 113 is conductively connected to the high concentration contact region 162a via the barrier layer 240a.

As described above, in the method of manufacturing the TFT 200 of this example, the interlayer insulating film 1 is formed in the high-concentration impurity introduction step.
Since the impurities are implanted through the contact holes 111a and 111b formed in No. 11, even if a mask is not formed,
Impurities can be introduced only in a predetermined range.

In the high-concentration impurity introduction step, the impurity is not directly implanted into the low-concentration source / drain regions 104a and 105a, but is implanted through the barrier layer 140. Here, the acceleration voltage of the ions and the like are set so that the peak of the impurity distribution is located inside the barrier layer 140. Therefore, the crystallinity is deteriorated at the peak portion of the impurity distribution, but at such a portion, the barrier layer 240 (the barrier layer 240
a, 240b). Therefore, the crystallinity of the source region 162 and the drain region 163 is not significantly deteriorated. Therefore, without heat treatment at high temperature,
By performing heat treatment at a relatively low temperature (eg, about 300 ° C.), the source region 162 and the drain region 16 are
Since the crystallinity of No. 3 can be recovered, the whole manufacturing process can be performed in a low temperature process.
Has the same effect as.

In addition to this, in this example, in the high concentration impurity introduction step, the low concentration source / drain regions 104 are formed.
a and 105a are implanted with impurity ions through the barrier layer 240, and then the barrier layer 240 (the barrier layers 240a and 240a
b) is used by leaving it at the bottoms of the contact holes 111a and 111b. That is, when introducing high-concentration impurities,
Mutual migration of atoms occurs between the source / drain regions 104a and 105a (silicon film) and the barrier layer 240, and mixing of atoms occurs, so that the high-concentration contact regions 162a and 163a (silicon film) and the barrier layer are formed. The connection resistance with 240 is small. Here, the connection resistance between the TiNx layer forming the barrier layer 240 and the aluminum alloy layer forming the source electrode 113 is originally small. Therefore, the connection resistance on the source region 162 side is reduced. Such an effect can be obtained even when an aluminum layer, an aluminum alloy layer, a molybdenum layer, a tungsten layer, or a chromium layer is used as the barrier layer 240.

In addition, the drain electrode 11 made of the ITO layer
2 has a problem that the connection resistance between the high concentration contact region 163a (silicon film) is larger than that of the conventional one.
In this example, the drain electrode 112 (ITO layer) is formed via the barrier layer 240b left at the bottom of the contact hole 111b.
And the high-concentration contact region 163a (silicon film) are conductively connected to each other, so that even on the drain region 163 side,
Small connection resistance.

[Third Embodiment] FIG. 7 shows a TF according to a third embodiment.
It is a longitudinal cross-sectional view showing the structure of T. The TFT of this example
Differs from the TFTs of Examples 1 and 2 in that it has an offset gate structure.

In FIG. 7, on the surface side of a glass substrate 301 which is a transparent insulating substrate, tantalum, aluminum,
Alternatively, a gate electrode 309 made of chromium, a source region 362 and a drain region 363 located in a region laterally displaced from an end portion of the gate electrode 309, and a channel between the source region 362 and the drain region 363. And a channel formation region 307 for forming Here, the TFT 300 has a channel formation region 307.
On the other hand, it is of a top gate type in which the gate electrode 309 faces the gate insulating film 308 on the upper layer side. Further, the TFT 300 is an N-channel type in which an N-type impurity is introduced into the source region 362 and the drain region 363.

Source region 362 and drain region 36
3 is a contact hole 311a of the interlayer insulating film 311,
311b is formed only in the corresponding region, and the source region 3
62 and the drain region 363 itself are high-concentration contact regions to which the source electrode 313 made of an aluminum alloy layer and the drain electrode 312 made of an ITO layer are conductively connected. Here, the contact hole 311
At the bottom of a, 311b is a thin barrier layer 340a, 340b (eg, a barrier layer having a thickness of about 1000 Å) made of a TiNx layer. Therefore, the source electrode 313 and the drain electrode 312 are the barrier layer 340a,
It is conductively connected to the source region 362 and the drain region 363 via 340b.

The top-gate type TF configured as described above
Since T300 is manufactured by the following manufacturing method, it has high productivity as in the first embodiment, and the crystallinity deterioration that occurs when impurities are introduced into the source region 362 and the drain region 363 is low temperature heat treatment. It has been fully repaired. In addition, the source electrode 313 and the drain electrode 312, and the source region 362 and the drain region 36.
The connection resistance with 3 is small.

FIGS. 8A to 8C are process sectional views showing a method of manufacturing the TFT 300.

First, as shown in FIG. 8A, a silicon oxide film 306 having a film thickness of about 2000 angstrom is formed on the surface of the glass substrate 301.

Next, after forming a non-doped polycrystalline silicon film having a film thickness of about 500 angstrom, it is patterned to form a polycrystalline silicon film 304.
Such a polycrystalline silicon film is formed by, for example, a solid phase growth method or a low temperature low pressure CVD method (LPCVD method). Further, the polycrystalline silicon film 304 may be formed by polycrystallizing an amorphous silicon film by a laser annealing method.

Next, a silicon oxide film 308 (gate insulating film) having a film thickness of about 1200 Å is formed on the surface side of the polycrystalline silicon film 304. Next, a metal layer having a small electric resistance, such as aluminum, chromium, or tantalum, is formed on the surface side of the silicon oxide film 308 by a sputtering method or the like, and then patterned to form a gate having a film thickness of about 6000 angstroms. The electrode 309 is formed.

Next, as shown in FIG. 8B, after forming an interlayer insulating film 311 on the surface side of the gate electrode 309,
Contact holes 311a and 311b are formed therein.

Further, in this example, a thin barrier layer 340 (for example, a barrier layer having a film thickness of about 1000 Å) made of a TiNx layer is formed on the surface side of the interlayer insulating film 311 (the entire surface of the glass substrate 301). Here, the barrier layer 340 is formed not only on the surface side of the interlayer insulating film 311, but also on the bottoms of the contact holes 311a and 311b (barrier layer forming step).

Next, as shown in FIG. 8C, a high concentration impurity is introduced with the barrier layer 340 formed in the bottoms of the contact holes 311a and 311b. At this time, impurities are implanted into the entire surface of the glass substrate 301 without using a mask (high-concentration impurity introduction step).

The ion implantation apparatus 50 shown in FIG. 3 is also used in this high-concentration impurity introduction step. That is, P
Approximately 80% of all ions generated from a mixed gas containing 5% of H ₃ and the balance being hydrogen gas without mass separation.
Ion implantation is performed with an energy of keV. Note that helium gas may be used instead of hydrogen gas. Conditions such as the ion acceleration voltage at this time are set so that the peak portion of the impurity concentration is located on the barrier layer 340 side. The amount of impurities introduced is about 1 × 10 ¹⁵ / cm ² in terms of phosphorus ion dose.

As a result, high concentration impurities are selectively introduced into the regions of the polycrystalline silicon film 304 corresponding to the contact holes 311a and 311b without using a mask, and the source region 162 and the drain region are formed. 1
63 (high concentration contact region) is formed.

Next, the implanted impurities are subjected to a low temperature heat treatment at about 300 ° C. for 1 hour in a nitrogen atmosphere.

Next, as shown in FIG. 8D, the barrier layer 3
40 for contact holes 311a,
Barrier layers 340a, 3a around the bottom of 311b and around it.
Leave 40b.

Thereafter, as shown in FIG. 7, a drain electrode 312 made of an ITO layer (pixel electrode) and a source electrode 313 made of an aluminum alloy layer are sequentially formed. As a result, the drain electrode 312 becomes the barrier layer 340b.
The source electrode 313 is conductively connected to the drain region 363 via the barrier layer 340a.

As described above, in the method of manufacturing the TFT 300 of this example, the interlayer insulating film 3 is formed in the high-concentration impurity introduction step.
Since impurities are implanted from the contact holes 311a and 311b formed in No. 11, even if a mask is not formed,
Impurities can be introduced only in a predetermined range.

In the high-concentration impurity introduction step, the impurity is not directly implanted into the polycrystalline silicon film 304, but is implanted through the barrier layer 340. Here, the ion accelerating voltage and the like are set so that the peak of the impurity distribution is located inside the barrier layer 340. Therefore, although the crystallinity is lowered at the peak portion of the impurity concentration, such a portion exists inside the barrier layer 340 (the barrier layers 340a and 340b). Therefore, the source region 362 and the drain region 3
In 63, the crystallinity does not significantly deteriorate. Therefore, even if heat treatment is not performed at a high temperature, a relatively low temperature (for example, about 3
By performing heat treatment at 00 ° C., the source region 36
Since the crystallinity of the drain region 363 and the drain region 363 can be recovered, the same effects as those of the first embodiment can be obtained, such that the entire manufacturing process can be performed by a low temperature process.

In addition to this, in this example, the barrier layer 34 is formed on the polycrystalline silicon film 304 in the high-concentration impurity introduction step.
After implanting the impurity ions through 0, the barrier layer 340
The (barrier layers 340a and 340b) are formed in the contact holes 31.
It is used by leaving it on the bottom of 1a and 311b. That is, when the high-concentration impurities are introduced, mutual movement of atoms occurs between the polycrystalline silicon film 304 and the barrier layer 340 through the boundary portion, and mixing of the atoms occurs.
62, the connection resistance between the drain region 363 (silicon film) and the barrier layer 340 is small. Here, the TiNx layer forming the barrier layer 340 and the aluminum alloy layer forming the source electrode 313 have small connection resistance. Therefore, the connection resistance on the source region 362 side is reduced. Such an effect can be obtained even when an aluminum layer, an aluminum alloy layer, a molybdenum layer, a tungsten layer, or a chromium layer is used as the barrier layer 340.

In addition, the drain electrode 31 made of the ITO layer
2 has a problem that the connection resistance between the drain region 363 and the drain region 363 (silicon film) is larger than the conventional one, but in this example,
Barrier layer 340a remaining at the bottom of the contact hole 311b
Since the drain electrode 312 (ITO layer) and the drain region 363 (silicon film) are conductively connected via the, the connection resistance is small even on the drain region 363 side.

[Embodiment 4] FIG. 9 is an enlarged view of one of pixel regions defined by signal lines and scanning lines in an active matrix substrate for a liquid crystal display panel using a bottom gate type thin film transistor of this embodiment. Is shown. In addition,
Since this active matrix substrate is functionally similar to the active matrix substrate shown in FIG. 1, parts having common functions are denoted by the same reference numerals. In this figure, a pixel area 4 is formed by a signal line 2 and a scanning line 3 on an active matrix substrate 1 for a liquid crystal display panel.
In the pixel region 4, a source region to which the source electrode S extending from the signal line 2 is conductively connected is formed in the pixel region 4.
A pixel thin film transistor (TFT) including a gate electrode G extending from the scanning line 3 is formed. Here, a part of the ITO electrode 6 covering the pixel region 4 is TF.
It is the drain electrode D of T. The TFT of this example
9 corresponds to the YY 'section in FIG.

FIG. 10 is a vertical sectional view showing the structure of the TFT according to the fourth embodiment.

In FIG. 10, in the TFT 400 of this example, the gate electrode 402 is formed on the front surface side of the glass substrate 401, and the gate insulating film 403 is formed on the front surface side of the gate electrode 402. On the surface side of the gate insulating film 403, a silicon film 406 that forms a channel formation region 404 is formed in a region facing the gate electrode 402. Here, the silicon film 406 has a source region 411 and a drain region 412 on both sides of the channel formation region 404. An interlayer insulating film 405 is formed on the surface side of the silicon film 406, and contact holes 405a and 405b are formed therein.
Further, between the contact holes 405a and 405b,
A channel protective film 405c is formed. High-concentration contact regions 411a and 412a are formed in the source region 411 and the drain region 412 corresponding to the bottoms of the contact holes 405a and 405b.

Source electrode 422 and drain electrode 42
1 is conductively connected to the high concentration contact regions 411a and 411b of the source region 411 and the drain region 412 through the contact holes 405a and 405b.

In this example, the contact holes 405a, 4
Of the 05b, the bottom of the contact hole 405b,
There is a thin barrier layer 440b made of a chromium layer (eg, a barrier layer having a thickness of about 1000 Å). Therefore, the drain electrode 421 is conductively connected to the high concentration contact region 412a via the barrier layer 440b. Since the barrier layer 440b is formed not only on the bottom of the contact hole 411b but also on the entire lower layer of the drain electrode 421, it can be used for a reflective liquid crystal display device. Here, the material and film thickness of the barrier layer 440b are
The structure like this example in which the barrier layer 440b is formed over the entire lower layer of the drain electrode 421 can be applied to the transmissive liquid crystal display device if the light transmittance is not sacrificed. Bottom gate type TFT configured in this way
Since 400 is manufactured by the following manufacturing method, the productivity is high and the connection resistance between the drain electrode 421 and the high-concentration contact region 412a is small.

A method of manufacturing the TFT of this example will be described with reference to FIGS.

First, as shown in FIG. 11A, a gate electrode 402 is formed on the surface of a glass substrate 401. The gate electrode 402 has a film thickness of 3000 by a sputtering method or the like.
It is formed by forming a tantalum layer having a thickness of about angstrom and then patterning it.

Next, a gate insulating film 403 is formed on the surface side of the glass substrate 401 on which the gate electrode 402 is formed.
The gate insulating film 403 is formed by forming a silicon nitride film (SiNx) having a film thickness of about 3000 angstrom by the plasma CVD method or the like and patterning it.

Next, the amorphous silicon film 40 is formed on the surface side of the gate insulating film 403 by the plasma CVD method or the like.
6 is formed. The silicon film 406 is formed by forming the gate insulating film 403, forming an amorphous silicon film 406 on the entire surface of the substrate, and then patterning the amorphous silicon film 406.

Next, as shown in FIG. 11B, an interlayer insulating film 405 is formed on the surface side of the silicon film 406. The interlayer insulating film 405 is formed by forming a silicon nitride film (SiNx) on the entire surface of the substrate and then patterning it. In this patterning process,
Contact holes 405a and 405b are also formed. As a result, between the contact holes 405a and 405b,
The channel protective film 405c is formed.

Next, as shown in FIG. 11C, a thin barrier layer 440 made of a chromium film (for example, a barrier layer having a film thickness of about 1000 Å) is formed on the entire surface of the substrate. As a result, the barrier layer 440 is formed on the surfaces of the interlayer insulating film 406 and the channel protective film 405c, and also at the bottoms of the contact holes 405a and 405b.
The barrier layer 440 is formed (barrier layer forming step).

In this example, impurities are introduced in this state. That is, as shown in FIG. 11D, when phosphorus ions are implanted into the entire surface of the substrate, the silicon film 40
Of 6, the impurities are selectively introduced only into the portions corresponding to the contact holes 405a and 405b. At this time, so-called high temperature ion implantation is performed with the substrate temperature raised to about 200 ° C. or higher. As a result, high-concentration contact regions 411a and 411b having a predetermined depth are formed on the surface of the silicon film 406 (high-concentration impurity introduction step).

Next, the implanted impurities are subjected to a low temperature heat treatment at about 300 ° C. for 1 hour in a nitrogen atmosphere.

Then, as shown in FIG. 11 (e),
After forming the ITO layer 421a on the entire surface of the substrate, as shown in FIG.
As shown in 0, it is patterned by a predetermined mask to form a drain electrode 421. Subsequently, the barrier layer 440 is also patterned in the same pattern to leave the barrier layer 440b under the drain electrode 421. As a result, I
The drain electrode 421 made of the TO layer becomes a pixel electrode having a barrier layer 440b made of a chromium film as a lower layer. Also,
Although not shown, a Ti layer is formed on the entire surface of the substrate and then patterned to form a source electrode 422.

As described above, the TFT 400 of this example
Also in the manufacturing method of the high concentration contact region 411
In the high-concentration impurity introduction step for forming a and 412a, the impurities are implanted through the contact holes 405a and 405b formed in the interlayer insulating film 411, so that the impurities are introduced only into a predetermined region without forming a mask. be able to.

In the high-concentration impurity introduction step, the impurities are not directly implanted into the silicon film, but are implanted through the barrier layer 440. Therefore, the implantation energy can be set to be large, and the introduction speed can be increased. Therefore, according to the manufacturing method of the present example, the required time can be shortened even when introducing a high concentration of impurities.

Further, at the time of introducing the impurities, the acceleration voltage and the like are set so that the peak portion of the impurity concentration is located inside the barrier layer 440. Therefore, in the peak portion of the impurity concentration, even if the crystallinity is largely deteriorated, such a portion is not present in the source region 411 and the drain region 412. Therefore, even if the heat treatment is performed at a low temperature, the crystallinity of the source region 411 and the drain region 412 can be restored, so that the entire manufacturing process can be performed at a low temperature process.

Moreover, the barrier layer 440 may be formed only on the entire surface of the interlayer insulating film 405, and when it remains as the barrier layer 440b after introducing a high concentration of impurities, it has the same pattern as the drain electrode 421. Since tanning is performed, there is no disadvantage that the number of masks increases.

In addition to this, in this example, since the barrier layer 440 after the high-concentration impurities are introduced is used as the lower layer of the drain electrode 421, the barrier layer 440 and the drain electrode 421 (ITO) and the high-concentration pattern are used. Contact region 412a
The connection resistance with the (silicon film) can be reduced. [Other Examples] In Examples 1 to 4,
Four types of barrier layers after introduction of high-concentration impurities have been described using two types of TFTs (top gate type and bottom gate type) having typical structures.
For example, in a top gate type TFT, various combinations are possible, such that a barrier layer may be left entirely under the drain electrode. That is, Examples 1 to 4
As shown in Table 1, the structure that leaves the barrier layer and the structure that removes the barrier layer after the introduction of impurities are
The TFT having the DD structure can be applied to both the top gate type and the bottom gate type.

[0119]

[Table 1]

Similarly, as shown in Table 2, the structure of leaving the barrier layer and the structure of removing the barrier layer after the introduction of impurities are the same as those described in Embodiments 1 to 4 in the TFT having the offset gate structure. It can be applied to any of a top gate type and a bottom gate type.

[0121]

[Table 2]

Further, as shown in Table 3, the structure in which the barrier layer is left and the structure in which the barrier layer is removed after the introduction of the impurity as described in Embodiments 1 to 4 are as follows. The present invention can also be applied to a TFT having a normal structure that does not have an offset region or a low concentration region in the portion where the ends of the gate electrode face each other. In this case, the bottom gate type has a large effect, but the top gate type has a limited effect. The reason is the top gate type T
In the case of forming a source / drain region having a self-aligned structure in FT, high-concentration impurities have been introduced while using the gate electrode as a mask in the process before forming the interlayer insulating film and its contact hole. Therefore, it is limited to the case where the barrier layer is formed for the purpose of reducing the connection resistance between the source / drain electrodes and the high concentration source / drain regions.

[0123]

[Table 3]

Note that any combination shown in Tables 1 to 3 can be formed as an N-channel TFT or a P-channel TFT.

The active matrix substrate may be configured not only for the transmissive liquid crystal display device but also for the reflective liquid crystal display device.

Further, in each embodiment, Ti is used as the barrier layer.
Although an Nx layer or a chromium layer is used, other barrier layers, for example, an ITO layer, an aluminum layer, an aluminum alloy layer, a molybdenum layer, or a tungsten layer are used as a single layer or in a state where they are laminated. be able to. Among these barrier layer materials, the ITO layer is suitable for a transmissive liquid crystal display device. Further, in the transmissive liquid crystal display device, as shown in FIG. 12 in which one pixel region of the active matrix substrate is enlarged, a barrier layer 540 formed of a molybdenum layer or a chromium layer is provided around the pixel region.
Is left as the underlying layer of the pixel electrode 6, the barrier layer 5
40 functions as a light shielding layer. Therefore, the barrier layer 540 can be used to reduce the connection resistance between the source / drain electrodes and the source / drain regions and form a black matrix, which is optimal for a transmissive liquid crystal display device. Further, when the barrier layer composed of a molybdenum layer or a chrome layer is left in the entire pixel region, the barrier layer itself functions as a reflective layer, which is also suitable for a reflective liquid crystal display device.

As described above, in the TFT manufacturing method of this example, in the impurity introduction step for forming the high-concentration contact region, the impurity is implanted through the contact hole formed in the interlayer insulating film, and before the impurity is implanted. In addition, a barrier layer is formed on at least the bottom surface of the contact hole. Therefore, according to the present invention, a high-concentration contact region can be formed in a predetermined region without forming a mask.

Further, since the impurities are implanted into the source / drain regions via the barrier layer, the implantation energy can be set large. Therefore, the beam current can be set to a large value to increase the impurity introduction speed, and the required time can be shortened even when a high concentration impurity is introduced. Furthermore, the implantation energy can be set so that the peak of the impurity distribution is located on the barrier layer side. Therefore,
Even if the crystallinity is significantly deteriorated at the peak of the impurity distribution, such a part does not exist on the source / drain region side. Therefore, even if the heat treatment for activating the introduced impurities is performed at a low temperature, In the region, the crystallinity is sufficiently restored. Therefore, the entire manufacturing process can be performed in a low temperature process.

When impurities are implanted into the source / drain regions through the barrier layer, the connection resistance is reduced due to the mixing of atoms generated between the barrier layer and the source / drain regions. Therefore, the connection resistance between the source / drain electrode and the source / drain region can be reduced by leaving the barrier layer at the bottom of the contact hole after introducing the high concentration impurity.

In particular, when the barrier layer after introducing a high concentration of impurities is left below the ITO layer as the drain electrode, the ITO and the silicon film are conductively connected through the barrier layer, so that they are electrically connected. It is possible to significantly reduce the connection resistance in.

[Brief description of drawings]

FIG. 1 is an explanatory diagram showing an enlarged pixel region on an active matrix substrate in a liquid crystal display device using a TFT according to Examples 1, 2, and 3 of the present invention.

FIG. 2 is a cross-sectional view schematically showing the structure of the TFT according to the first embodiment of the invention.

FIG. 3 is a schematic configuration diagram of an ion implantation apparatus used for introducing impurities in the method of manufacturing the TFT shown in FIG.

4A to 4C are process cross-sectional views showing a method of manufacturing the TFT shown in FIG.

FIG. 5 is a sectional view schematically showing a structure of a TFT according to a second embodiment of the invention.

6A to 6D are process cross-sectional views showing a method of manufacturing the TFT shown in FIG.

FIG. 7 is a sectional view schematically showing a structure of a TFT according to a third embodiment of the invention.

8A to 8D are process cross-sectional views showing a method of manufacturing the TFT shown in FIG.

FIG. 9 is an explanatory diagram showing an enlarged pixel region on an active matrix substrate in a liquid crystal display panel using a TFT according to a fourth embodiment of the present invention.

FIG. 10 is a cross-sectional view schematically showing the structure of a TFT according to Example 4 of the present invention.

FIG. 11 is a process cross-sectional view showing the method of manufacturing the TFT shown in FIG.

FIG. 12 is an explanatory diagram of a black matrix in which a barrier layer is used as a light shielding layer in another example of the present invention.

FIG. 13 is a process cross-sectional view showing a conventional method for manufacturing a TFT.

FIG. 14 is a process cross-sectional view showing another conventional method for manufacturing a TFT.

[Explanation of symbols]

1 ... Active matrix substrate for liquid crystal display panel 2 ... Signal line 3 ... Scan line 4 ... Pixel region 6 ... ITO electrode (pixel electrode) 100, 200, 300, 400 ... TFT 101, 301, 401 ... Glass substrate 107, 304, 404 ... Channel formation region 108, 303, 403 ... Gate insulating film 109, 309, 402 ... Gate electrode 111, 311, 405 ... -Interlayer insulating films 111a, 111b, 311a, 311b, 405a,
405b ... Contact holes 112, 312, 421 ... Drain electrodes 113, 313, 422 ... Source electrodes 132, 162, 362, 411 ... Source regions 133, 163, 363, 412 ... Drain regions 132a, 133a, 162a, 163a, 411a,
412a ... High-concentration contact regions 140, 240, 340, 440 ... Barrier layers 240a, 240b, 340a, 340b, 441b.
..Barrier layer after patterning

Continued front page    F-term (reference) 4M104 AA09 BB02 BB13 BB16 BB17                       BB30 BB36 CC01 CC05 DD82                       GG08 HH15                 5F110 AA03 AA16 AA17 BB01 CC02                       CC08 DD02 DD13 EE03 EE04                       EE44 FF02 FF03 FF30 GG02                       GG13 GG15 GG25 GG42 GG45                       GG47 HJ01 HJ04 HJ06 HJ12                       HJ13 HJ23 HL01 HL03 HL04                       HL06 HL07 HL11 HL12 HL27                       HM15 NN02 NN24 NN72 PP03                       QQ11 QQ26

Claims (6)

[Claims] 1. A channel formation region capable of forming a channel between a source region and a drain region, and a gate electrode facing the channel formation region with a gate insulating film interposed therebetween, and at least the drain region. A method of manufacturing a thin film transistor in which a drain electrode is conductively connected, a step of forming a barrier layer on the drain region, and a high concentration impurity introduction step of introducing a high concentration impurity into the drain region through the barrier layer. And a peak of distribution of impurities introduced in the high-concentration impurity introduction step is located on the side of the barrier layer. 2. The barrier layer according to claim 1, wherein the barrier layer is a titanium nitride layer, an indium tin oxide layer,
A method of manufacturing a thin film transistor, comprising any one of an aluminum layer, an aluminum alloy layer, a molybdenum layer, a tungsten layer, and a chromium layer. 3. The thin film transistor according to claim 1, wherein the barrier layer on the drain region is removed after the high-concentration impurity introduction step, and then the drain electrode is formed. Method. 4. The method of manufacturing a thin film transistor according to claim 1, wherein the drain electrode is arranged on the drain region with the barrier layer interposed therebetween. 5. A method of manufacturing an active matrix substrate, wherein a drain electrode of a thin film transistor manufactured by using the method of manufacturing a thin film transistor according to claim 1 is formed as a pixel electrode. 6. A method of manufacturing a liquid crystal display panel, wherein a drain electrode of a thin film transistor manufactured by using the method of manufacturing a thin film transistor according to claim 1 is formed as a pixel electrode.