JP2003149433A - Color filter substrate, liquid crystal device using the same, method for manufacturing color filter substrate and method for manufacturing liquid crystal device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a color filter substrate which significantly suppresses generation of air bubbles, a liquid crystal device, a method for manufacturing a color filter and a method for manufacturing a liquid crystal device. SOLUTION: The color filter substrate 12 of the liquid crystal device 1 comprises a first substrate 112, a color filter 122 disposed on the first substrate, a flattening film 124 disposed on the color filter 122, and a silicon oxide film 127 disposed on the flattening film 124 and having the thickness of >=2 nm and <=10 nm or >=80 nm and <=150 nm.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a color filter substrate, a liquid crystal device having the same, a color filter substrate manufacturing method, and a liquid crystal device manufacturing method.

[0002]

2. Description of the Related Art Liquid crystal devices are widely used as display devices for various electronic devices. This liquid crystal device generally has a structure in which a pair of substrates such as glass substrates are bonded together via a sealant, and liquid crystal is sealed between both substrates. One of the substrates is a color filter substrate in which R (red), G (green) and B (blue) color filters are arranged on the substrate. In the color filter substrate, a flattening film made of an organic resin, a silicon oxide film, and electrodes are sequentially arranged on the color filter. The silicon oxide film is formed on the flattening film in order to improve the adhesion of the electrode, and its thickness is usually 20 to 2
It is 5 nm.

[0003]

However, the above liquid crystal device has a problem that when a shock is applied to the liquid crystal device, bubbles are generated in the liquid crystal layer and the display quality is deteriorated.

The present invention has been made in view of the circumstances described above, and provides a color filter substrate, a liquid crystal device, a method for manufacturing a color filter substrate, and a method for manufacturing a liquid crystal device, which can significantly suppress the generation of bubbles. Is intended.

[0005]

The present inventor has found that, in the process of manufacturing a color filter substrate, when a silicon oxide film is formed on a flattening film by sputtering, a flattening film made of an organic substance is formed by radicals in a sputtering atmosphere. The organization of the film or the color filter is destroyed, gas such as carbon monoxide and methane is generated, and it is found that the formation of a silicon oxide film containing this gas causes the generation of bubbles,
The present invention has been made.

That is, in order to solve the above-mentioned problems, the color filter substrate of the present invention includes a first substrate, a color filter arranged on the first substrate, and a planarizing film arranged on the color filter. And a silicon oxide film having a thickness of 2 nm or more and 10 nm or less arranged on the planarization film.

According to such a configuration of the present invention, by setting the film thickness of the silicon oxide film to 10 nm or less, the film forming time for forming the silicon oxide film by, for example, sputtering is shortened as compared with the conventional case. Therefore, the absolute amount of gas contained in the silicon oxide film can be reduced as compared with the conventional case. That is, even if the flattening film or the structure of the color filter is destroyed by the radicals in the sputtering atmosphere to generate a gas such as carbon monoxide or methane, the absolute time when the substrate is exposed to the radicals is greater than that in the conventional case. Since it is short, the absolute amount of gas generated can be reduced as compared with the conventional case. Therefore, by using the color filter substrate of the present invention in a liquid crystal device, it is possible to significantly reduce the occurrence rate of bubbles as compared with the conventional liquid crystal device, and to provide a liquid crystal device with high reliability and stable quality characteristics. Obtainable. On the other hand, the thickness of the silicon oxide film is set to 2 nm or more because, in the formation of the silicon oxide film, a silicon oxide film of about 2 nm is formed even if the processing operation is performed for a minimum time. This is because it is preferable to form the above silicon oxide film. Also, if a film of at least about 2 nm is not formed, it becomes impossible to secure close contact with, for example, an ITO film formed thereon. still,
The silicon oxide film can be formed not only by sputtering but also by using CVD (chemical vapor deposition method), and gas is generated in the film formation by using CVD as in the case of sputtering. It is effective to define the thickness of the silicon film.

Another color filter substrate of the present invention is the first
A substrate, a color filter arranged on the first substrate, a flattening film arranged on the color filter, and a thickness of 80 nm or more and 150 nm arranged on the flattening film.
It is characterized by comprising the following silicon oxide film.

According to such a constitution of the present invention, by making the film thickness to be 80 nm or more, which is larger than the conventional film thickness, when the liquid crystal device is assembled, the sputtering when the silicon oxide film is formed by sputtering, for example. The silicon oxide film functions to prevent a gas such as carbon monoxide or methane generated by destroying the texture of the flattening film or the color filter by radicals in the atmosphere from being released into the liquid crystal. Therefore, by using the color filter substrate of the present invention in a liquid crystal device, it is possible to significantly reduce the occurrence rate of bubbles as compared with the conventional liquid crystal device, and to provide a liquid crystal device with high reliability and stable quality characteristics. Obtainable. On the other hand, when the film thickness of the silicon oxide film is larger than 150 nm, the quality of the silicon oxide film becomes unstable, peeling or destruction of the silicon oxide film occurs, and the quality of the thin film formed thereon is adversely affected. . Note that the silicon oxide film can be formed by using CVD (chemical vapor deposition method) in addition to sputtering, and gas is generated similarly to sputtering in film formation using CVD. It is effective to specify the thickness of the silicon oxide film.

Further, the present invention is characterized by further comprising a first electrode disposed on the silicon oxide film. in this way,
It is also possible to arrange the electrodes on the silicon oxide film.

Further, the silicon oxide film is formed by sputtering. When a silicon oxide film is formed by sputtering, the structure of the flattening film or the color filter is destroyed by radicals in the sputtering atmosphere to generate a gas such as carbon monoxide or methane, and this gas is contained in the silicon oxide film. To be formed. The gas contained in the silicon oxide film causes generation of bubbles in the liquid crystal device. However, in the present invention, the amount of gas generated is controlled by controlling the film thickness of the silicon oxide film. Absolutely less, or the silicon oxide film can block the gas from being released into the liquid crystal.

Further, the silicon oxide film is characterized by being made of SiO or SiO ₂ . As described above, SiO, SiO _2, or the like can be used as the silicon oxide film.

The flattening film is made of an organic material. As the flattening film, an organic material such as acrylic resin or epoxy resin can be used. In general, compared to inorganic substances, organic substances are easy to form with a large film thickness, and therefore, it is effective to use them as a flattening film.

The color filter is characterized by containing an organic substance. As the color filter, an organic material such as an acrylic resin or an epoxy resin colored with a dye, or a pigment dispersed in an organic material can be used.

A liquid crystal device of the present invention is a liquid crystal device sandwiched between the color filter substrate described above, a second substrate facing the color filter substrate, and the color filter substrate and the second substrate. And a layer. With such a configuration, it is possible to significantly reduce the occurrence rate of bubbles as compared with the conventional liquid crystal device, and it is possible to obtain a liquid crystal device having stable and reliable quality characteristics.

In the method for manufacturing a color filter substrate of the present invention, a step of forming a color filter on the first substrate, a step of forming a flattening film on the color filter, and a thickness of 2 nm on the flattening film. And a step of forming a silicon oxide film having a thickness of 10 nm or less.

According to such a structure of the present invention, by forming the silicon oxide film so as to have a film thickness of 10 nm or less, the film forming time for forming the silicon oxide film by, for example, sputtering is conventionally used. Can be shortened compared to
The absolute amount of gas contained in the silicon oxide film can be reduced more than ever before. That is, even if the flattening film or the structure of the color filter is destroyed by the radicals in the sputtering atmosphere to generate a gas such as carbon monoxide or methane, the absolute time when the substrate is exposed to the radicals is greater than that in the conventional case. Since it is short, the absolute amount of gas generated can be reduced as compared with the conventional case. Therefore, by using the color filter substrate manufactured by the manufacturing method of the present invention in a liquid crystal device, the generation rate of bubbles can be significantly reduced as compared with the conventional liquid crystal device, and the reliability is stable. A liquid crystal device having quality characteristics can be obtained. On the other hand, the thickness of the silicon oxide film is set to 2 nm or more because, in the formation of the silicon oxide film, the silicon oxide film of about 2 nm is formed even if the processing operation is performed for a minimum time.
This is because it is preferable to form a silicon oxide film having a thickness of nm or more. Also, if a film of at least about 2 nm is not formed, it becomes impossible to secure close contact with, for example, an ITO film formed thereon. Note that the silicon oxide film can be formed by using CVD (chemical vapor deposition method) in addition to sputtering, and gas is generated similarly to sputtering in film formation using CVD. It is effective to specify the thickness of the silicon oxide film.

Another method of manufacturing a color filter substrate according to the present invention comprises a step of forming a color filter on the first substrate,
The method further comprises the steps of forming a flattening film on the color filter and forming a silicon oxide film having a thickness of 80 nm to 150 nm on the flattening film.

According to such a structure of the present invention, the silicon oxide film is formed to have a thickness of 80 nm or more, which is larger than the conventional film thickness, so that the silicon oxide film can be formed when the liquid crystal device is assembled. For example, a gas such as carbon monoxide or methane generated by destroying the texture of the flattening film or the structure of the color filter by radicals in the sputtering atmosphere when forming a film by sputtering is released into the liquid crystal. Works to prevent. Therefore, by using the color filter substrate manufactured by the manufacturing method of the present invention in the liquid crystal device, the generation rate of bubbles can be significantly reduced as compared with the conventional liquid crystal device, and the reliability is high and stable. A liquid crystal device having quality characteristics can be obtained. On the other hand, when the film thickness of the silicon oxide film is larger than 150 nm, the quality of the silicon oxide film becomes unstable, peeling or destruction of the silicon oxide film occurs, and the quality of the thin film formed thereon is adversely affected. . Note that the silicon oxide film can be formed by using CVD (chemical vapor deposition method) in addition to sputtering, and gas is generated similarly to sputtering in film formation using CVD. It is effective to specify the thickness of the silicon oxide film.

The method further comprises the step of forming a first electrode on the silicon oxide film. Thus, the electrode can be formed on the silicon oxide film.

Further, the silicon oxide film is formed by sputtering. When a silicon oxide film is formed by sputtering, the structure of the flattening film or the color filter is destroyed by radicals in the sputtering atmosphere to generate a gas such as carbon monoxide or methane, and this gas is contained in the silicon oxide film. To be formed. The gas contained in the silicon oxide film causes generation of bubbles in the liquid crystal device. However, in the present invention, the amount of gas generated is controlled by controlling the film thickness of the silicon oxide film. Absolutely less, or the silicon oxide film can block the gas from being released into the liquid crystal.

The silicon oxide film is made of SiO or SiO ₂ . As described above, SiO, SiO _2, or the like can be used as the silicon oxide film.

The flattening film is made of an organic material. As the flattening film, an organic material such as acrylic resin or epoxy resin can be used. In general, compared to inorganic substances, organic substances are easy to form with a large film thickness, and therefore, it is effective to use them as a flattening film.

Further, the color filter has an organic substance. As a color filter, organic substances such as acrylic resin and epoxy resin are colored with dyes,
Alternatively, an organic substance in which a pigment is dispersed can be used.

A method of manufacturing a liquid crystal device according to the present invention is a method of manufacturing a liquid crystal device in which a liquid crystal layer is sandwiched between a color filter substrate and a second substrate, wherein the color filter substrate is
It is characterized by being manufactured by the manufacturing method described above. With such a configuration, it is possible to significantly reduce the occurrence rate of bubbles as compared with the conventional liquid crystal device, and it is possible to obtain a liquid crystal device having stable and reliable quality characteristics.

[0026]

BEST MODE FOR CARRYING OUT THE INVENTION An embodiment in which the present invention is applied to a passive matrix type reflective liquid crystal device will be described below with reference to FIGS. In each of the drawings described below, the scales are different for each layer and each member in order to make each layer and each member recognizable in the drawings. FIG. 1 is a sectional view showing a configuration of a liquid crystal device according to an embodiment, and FIG. 2 is an enlarged perspective view showing a main part of the liquid crystal device. A sectional view taken along the line AA 'in FIG. 2 corresponds to FIG. FIG. 3 is a manufacturing process diagram of the color filter substrate. FIG. 4 is a diagram for explaining the relationship between the film thickness of the silicon oxide film and the generation of bubbles.

First, the structure of the liquid crystal device will be described.
As shown in FIGS. 1 and 2, in a liquid crystal device 1, a second substrate 11 and a color filter substrate 12 which face each other are bonded together via a sealing material 13, and an STN (Super Twisted Nematic) is provided between both substrates. The liquid crystal 14 is enclosed. The first substrate 112 that constitutes the second substrate 11 and the color filter substrate 12 is a light-transmissive plate-shaped member such as glass, quartz, or plastic. In addition, in practice, a polarizing plate, a retardation plate or the like for changing the incident light is attached to the outer surface (the side opposite to the liquid crystal 14) of the second substrate 11 and the color filter substrate 12, Since it has no direct relation to the content of the present invention, its illustration and description are omitted. Inside the second substrate 11 (liquid crystal 1
4 side) has a plurality of second stripes arranged in a stripe pattern.
The electrode 111 is arranged. Each second electrode 111 is formed of a transparent conductive material such as ITO (Indium Tin Oxide). Further, the surface of the first second substrate 11 on which the second electrode 111 is formed is covered with the alignment film 114. The alignment film 114 is an organic thin film of polyimide or the like, and has been subjected to a rubbing treatment for defining the alignment direction of the liquid crystal 14 when no voltage is applied.

On the other hand, the color filter substrate 12 has a first substrate 112, and on the surface of the first substrate 112 on the liquid crystal 14 side, a reflection layer 121, a light shielding layer 123, and a color filter 12 are provided.
2 (122R, 122G and 122B), planarizing film 1
24, a SiO ₂ film 127 as a silicon oxide film, a first electrode 125, and an alignment film 126 similar to the alignment film 114.
Are formed. The first electrode 125 is a striped electrode formed on the surface of the flattening film 124 by a transparent conductive material such as ITO, and extends in the direction intersecting with the second electrode 111. Under such a configuration, a voltage is applied between the second electrode 111 on the second substrate 11 and the first electrode 125 facing the second electrode 111, so that the alignment state of the liquid crystal 14 sandwiched by both electrodes changes. To do. That is, as shown in FIG. 2, regions where the second electrodes 111 and the first electrodes 125 face each other are arranged in a matrix, and each of these regions functions as a sub-pixel. That is, the sub-pixel can be regarded as the minimum unit of the region in which the alignment direction of the liquid crystal 14 changes according to the application of voltage.

The reflective layer 121 is formed of a light-reflective metal such as aluminum or silver. Light incident on the liquid crystal device 1 from the viewing side is reflected on the surface of the reflective layer 121 and emitted to the viewing side, thereby realizing a reflective display. The inner surface of the color filter substrate 12 is roughened to form a scattering structure (unevenness) on the surface of the reflective layer 121, but is not shown.

The light-shielding layer 123 is formed between the sub-pixels arranged in a matrix (that is, the second electrode 111 and the first electrode).
It is formed in a grid shape so as to cover a region other than the region facing the electrode 125), and has a role of shielding the gap between the sub-pixels and improving the contrast of the display image. The light shielding layer 123 in the present embodiment is assumed to be formed of a resin material containing a black colorant such as carbon black or a pigment. The light shielding layer 123 has a thickness of 1 μm, for example.

Color filter 122 (122R, 122R)
G and 122B) are layers formed of a resin material such as an acrylic resin or an epoxy resin as an organic material on the reflective layer 121, and R (red) by a dye or a pigment,
It is colored in either G (green) or B (blue). For example, when coloring with a pigment, the pigment is dispersed in the resin before use. In this embodiment,
Color filters 12 of the same color corresponding to each column of sub-pixels
An example is shown in which a so-called stripe arrangement in which two rows are arranged is adopted. Then, one pixel (dot), which is the minimum unit of the display image, is configured by the three sub-pixels corresponding to each color of R, G and B. The color filter 122 has a thickness of 2 μm, for example.

The flattening film 124 is a layer formed of an organic material such as acrylic resin or epoxy resin. The flattening film 124 includes the color filter 122 and the light shielding layer 12.
3 plays a role of flattening the unevenness formed on the color filter substrate 12. In particular, in a passive matrix type liquid crystal device using STN liquid crystal, cell gap (thickness of liquid crystal layer) unevenness has a strong influence on display characteristics, and thus flatness is important.

The SiO ₂ film 127 has a thickness of 10 nm or less or 80 n or less by sputtering as described later.
The film is formed to have a thickness of m or more. As the silicon oxide film, a SiO film may be used instead of the SiO2 film.
The SiO ₂ film 127 is formed to improve the adhesion of the first electrode 125, and the SiO ₂ film 127 is formed.
The adhesion of the first electrode 125 is improved by forming the first electrode 125 as compared with the case where the first electrode 125 is directly formed on the flattening film 124. Further, in this embodiment, SiO
₂ By defining the thickness of the film 127 as described above,
When assembled as a liquid crystal device, the generation rate of bubbles can be significantly reduced as compared with a conventional liquid crystal device, and a liquid crystal device with high reliability and stable quality characteristics can be obtained.

The relationship between the film thickness of the SiO ₂ film and the bubble generation rate will be described with reference to FIG. The following method was used to evaluate the generation of bubbles. First, after leaving a liquid crystal panel in which a liquid crystal layer is sandwiched between a second substrate and a color filter substrate in a high temperature environment of about 100 degrees, a small copper ball is dropped onto the liquid crystal panel to form a liquid crystal panel. Apply shock, or drop the liquid crystal panel itself to give shock. Then, the liquid crystal panel was inspected for the occurrence of bubbles. It should be noted that it is also possible to evaluate by leaving the liquid crystal panel in a high temperature environment after the impact.

As shown in FIG. 3, the bubble generation rate is
_{2 When} the thickness of the film is 5 nm, it is 0.20%, when it is 10 nm, it is 1.30%, when it is 15 nm, it is 5.30%, 20n.
28.00% at m, 32.00 at 25 nm
%, 40.00% at 50 nm, 1.20% at 80 nm, and 0.30% at 100 nm.
That is, while the bubble generation rate is around 30% when the conventional SiO ₂ film has a film thickness of 20 to 25 nm, in the present embodiment, the SiO ₂ film has a film thickness of 10 nm or less or 8 or less.
By setting the thickness to 0 nm or more, the bubble generation rate can be significantly reduced to about 1%. This has a film thickness of 10n
By setting m or less, the film formation time for forming the SiO ₂ film by sputtering can be shortened as compared with the related art, and the absolute amount of gas contained in the SiO ₂ film can be reduced as compared with the related art. It is thought that it is possible to do. That is, even if radicals in the sputtering atmosphere destroy the structure of the flattening film or the color filter to generate a gas such as carbon monoxide or methane, the absolute time for exposing the substrate to the sputtering atmosphere is Since it is short, the absolute amount of gas generated can be reduced as compared with the conventional case, and as a result, the generation of bubbles can be reduced. Further, by increasing the film thickness to 80 nm or more, which is larger than the conventional film thickness, gas such as carbon monoxide or methane generated by destroying the structure of the flattening film or the color filter by the radicals in the sputtering atmosphere is generated in the liquid crystal. Is released to S
It is considered that the iO ₂ film has a function of preventing, and as a result, generation of bubbles can be reduced. When the liquid crystal device is assembled, considering the utilization efficiency of light used for display, in order to shorten the optical path, it is preferable that the film thickness of the SiO ₂ film is not too thick, preferably 100 nm or less. . In addition, the evaluation results of the SiO film were almost the same as those of the SiO ₂ film. Furthermore, the thickness of the SiO ₂ film is set to 2 nm.
It is preferably 10 nm or less or 80 nm or more and 150 nm or less. Here, the thickness of the silicon oxide film is set to 2
When the silicon oxide film is formed, a silicon oxide film having a thickness of about 2 nm is formed even if the processing operation is performed for a minimum time. Therefore, a silicon oxide film having a thickness of 2 nm or more may be formed in actual use. This is because it is preferable. Also, if a film of at least about 2 nm is not formed, it becomes impossible to secure close contact with, for example, an ITO film formed thereon. On the other hand, when the thickness of the silicon oxide film is larger than 150 nm, the quality of the silicon oxide film becomes unstable and peeling / destruction of the silicon oxide film occurs, and the quality of the thin film formed thereon is adversely affected. .

Next, a method of manufacturing the above-mentioned liquid crystal device will be described with reference to FIGS. Incidentally, FIG.
FIG. 6A is a diagram showing a manufacturing process of a color filter substrate that constitutes a liquid crystal device.

First, as shown in FIG. 3A, a reflective layer 121 made of aluminum is formed on one surface of a first substrate 112 such as a glass substrate. The reflective layer 121 can be formed by using, for example, a sputtering method, an electron beam vapor deposition method, an ion plating method, or the like.

Next, a resin material colored black with carbon black is applied to the reflective layer 1 by spin coating or the like.
A black resin layer having a thickness of 1 μm is formed by coating on the surface of 21. In this embodiment, a photo-curable acrylic resin is used as the resin material. Then, the black resin layer is covered with a mask. In this mask, an opening is formed corresponding to a region of the black resin layer that should be the light shielding layer 123. Further, the black resin layer is irradiated with ultraviolet rays through a mask. As a result, the portion of the black resin layer corresponding to the opening of the mask is selectively irradiated with ultraviolet rays and cured. After that, the black resin layer is developed,
By removing the part that is not exposed to ultraviolet light,
As shown in FIG. 3B, the lattice-shaped light shielding layer 123 corresponding to the gap portion of each sub-pixel is formed.

Then, as shown in FIG. 3 (c), one of red, green and blue (see FIG.
A resin material colored red in (c) is applied to the surface of the color filter substrate 12 covered with the reflective layer 121 and the light shielding layer 123 by spin coating or the like to form a colored resin layer 32 having a thickness of 2 μm. To do. In this embodiment, an acrylic resin having photocurability is used as the resin material. Further, as shown in FIG. 3C, the colored resin layer 32 is covered with a mask 31 having an opening 31a in a region where the color filter 122 corresponding to the color of the colored resin layer 32 is to be formed, and The colored resin layer 32 is irradiated with ultraviolet rays through the mask 31. As a result, the portion of the colored resin layer 32 that is not covered by the mask 31 is selectively irradiated with ultraviolet rays and cured. Thereafter, by developing the colored resin layer 32, as shown in FIG.
The red color filter 122R is formed. continue,
The processes shown in FIGS. 3C and 3D are similarly performed for other colors (green and blue). As a result, FIG.
As shown in (e), R, G, B is formed on the surface of the reflective layer 121.
The color filters 122R, 122G and 122B corresponding to the respective colors are formed.

Next, as shown in FIG. 3 (f), an acrylic resin or an epoxy resin, here an acrylic resin is spin-coated or the like so as to cover the color filter 122 and the light shielding layer 123 formed as described above. Coating is performed to form a flattening film 124 having a thickness of 1 μm.

Then, a SiO ₂ film 127 is formed by sputtering in an Ar atmosphere of about 10 ⁻¹ Pa. As the film forming conditions, the Ar pressure value, the discharge voltage value, the film forming time, etc. may be appropriately adjusted. For example, when the film forming conditions other than the film forming time are the same, it takes about 0.5 hours to form a SiO ₂ film having a film thickness of 20 nm in the related art, whereas it takes 10 nm in the present embodiment. Hereinafter, it takes about 0.1 hours to form a SiO ₂ film having a thickness of 10 nm, for example.
It takes about 1 hour to form a SiO ₂ film having a thickness of 0 nm or more, for example, 80 nm. In this embodiment,
As described above, since the film is formed so that the film thickness of the SiO ₂ film is 10 nm or less, the film formation time can be shortened as compared with the conventional case, and the absolute amount of gas contained in the SiO ₂ film can be made smaller than the conventional case. Can also be reduced, and as a result, the generation of bubbles can be reduced. Further, the film thickness of the SiO ₂ film is 80
When the film is formed to have a thickness of not less than 10 nm, which is larger than the conventional film thickness, carbon monoxide or methane generated when the flattening film or the structure of the color filter is destroyed by the radicals in the sputtering atmosphere in the liquid crystal device. The SiO ₂ film functions to prevent the gas such as the above from being released into the liquid crystal, and as a result, the generation of bubbles can be reduced.

Next, an ITO film is formed by, eg, sputtering so as to cover the surface of the SiO ₂ film 127. Then, on the ITO film, a mask made of resin having an opening in a region except a portion corresponding to the first electrode 125 is formed, and the ITO film is etched through the mask to remove the mask. Then, the first electrode 125 is formed as shown in FIG. The SiO ₂ film 127 is set to 10 nm.
In the case of the following thickness, if the conventional etching conditions for the ITO film when the film thickness of the SiO ₂ film is 20 nm are applied as they are, over-etching occurs, so that the etching time is shortened, etc. Need to be changed appropriately.

Next, a polyimide film is formed and a rubbing process is performed to form an alignment film 126, and a color filter substrate is manufactured. On the other hand, the second electrode 111 and the alignment film 116 are formed on the surface of the second substrate 11. Since each of these parts can be formed by using various known methods, the description thereof will be omitted. Then, on the color filter substrate 12 obtained by the above process, the color filter substrate 12
While printing the frame-shaped sealing material 13 that surrounds the edge of
The color filter substrate 12 and the second substrate 11 on which the second electrode 111 and the like are formed are bonded via the sealing material 13. After that, the liquid crystal 14 is sealed between both substrates to manufacture a liquid crystal panel. After that, a polarizing plate and a retardation plate are attached to the outer surfaces of both substrates of the liquid crystal panel, whereby the liquid crystal device 1 shown in FIGS. 1 and 2 is completed.

Although the reflection type liquid crystal device has been described in the above embodiments, the present invention can be applied to a transmission type liquid crystal device and a semi-transmission reflection type liquid crystal device. Further, in the above-described embodiment, the passive matrix type liquid crystal device has been described as an example, but it can be applied to an active matrix type liquid crystal device using a switching element such as a TFT element or a TFD element.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing a configuration of a liquid crystal device according to an embodiment of the present invention.

FIG. 2 is a perspective view showing a main configuration of the liquid crystal device shown in FIG.

3 is a cross-sectional view showing a manufacturing process of a color filter substrate of the liquid crystal device shown in FIG.

FIG. 4 is a diagram for explaining a relationship between a silicon oxide film and a bubble generation rate.

[Explanation of symbols]

1 ... Liquid crystal device 11 ... Second substrate 12 ... Color filter substrate 14 ... Liquid crystal layer 112 ... First substrate 122, 122R, 122G, 122B ... Color filter 123 ... Shading layer 124 ... Flattening film 125 ... … Second electrode 127 …… SiO ₂ film

Claims (16)

[Claims] 1. A first substrate, a color filter arranged on the first substrate, a flattening film arranged on the color filter, and a thickness of 2 nm or more and 10 nm arranged on the flattening film. A color filter substrate comprising the following silicon oxide film. 2. A first substrate, a color filter arranged on the first substrate, a flattening film arranged on the color filter, and a thickness of 80 nm or more and 150 n arranged on the flattening film.
A color filter substrate comprising a silicon oxide film of m or less. 3. The color filter substrate according to claim 1, further comprising a first electrode disposed on the silicon oxide film. 4. The color filter substrate according to claim 1, wherein the silicon oxide film is formed by sputtering. 5. The silicon oxide film is SiO or Si.
The color filter substrate according to claim 1, wherein the color filter substrate is O ₂ . 6. The color filter substrate according to claim 1, wherein the flattening film is an organic material. 7. The color filter substrate according to claim 1, wherein the color filter has an organic material. 8. The color filter substrate according to claim 1, a second substrate facing the color filter substrate, and a sandwiching member between the color filter substrate and the substrate. A liquid crystal device comprising: 9. A step of forming a color filter on the first substrate, a step of forming a flattening film on the color filter, and a silicon oxide film having a thickness of 2 nm to 10 nm on the flattening film. A method of manufacturing a color filter substrate, comprising: 10. A step of forming a color filter on the first substrate, a step of forming a flattening film on the color filter, and a silicon oxide film having a thickness of 80 nm to 150 nm on the flattening film. A method of manufacturing a color filter substrate, comprising: 11. The method for manufacturing a color filter substrate according to claim 9, further comprising the step of forming a first electrode on the silicon oxide film. 12. The method for manufacturing a color filter substrate according to claim 9, wherein the silicon oxide film is formed by sputtering. 13. The silicon oxide film is formed of SiO or S.
claim from claim 9, characterized in that the iO ₂ 12
The method for manufacturing a color filter substrate according to any one of claims. 14. The method of manufacturing a color filter substrate according to claim 9, wherein the flattening film is made of an organic material. 15. The method of manufacturing a color filter substrate according to claim 9, wherein the color filter contains an organic material. 16. A method of manufacturing a liquid crystal device in which a liquid crystal layer is sandwiched between a color filter substrate and a second substrate, wherein the color filter substrate is any one of claims 9 to 15. A method for manufacturing a liquid crystal device, which is manufactured by the manufacturing method according to claim 1.