JP2003142366A - Projection aligner and method for monitoring gas state used for the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a safe and accurate projection aligner apparatus, which can realize high resolution by preventing an illuminating efficiency and an alignment accuracy from being reduced due to fogging of an essential optical element in the apparatus, immediately discover a cause in the case of a gas state fault, and shorten a down time of the apparatus, and to provide a method for monitoring gaseous state. SOLUTION: The method for monitoring the gas state comprises the steps of fully filling inert gas in a beam shaping optical system 2 and a projection lens 10 via a supply line, providing the optical system 2 and the lens 10 as well as a concentration detectors 13 to 15 for detecting the physical amounts of the gas existing in the peripheral space of the wafer 11, temperature detectors 24 to 26, pressure detectors 27 to 29 and a sensor controller 102, and processing the apparatus, when the detector detects the fault by a main control system 104, a stage drive control system 101, a laser control system 103 and a valve/ flow rate control system 107.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a projection exposure apparatus for projecting an original pattern such as a mask or reticle onto a substrate such as a glass substrate or a semiconductor wafer, and more particularly to an IC or LS.
It is suitable for manufacturing semiconductor chips such as I, liquid crystal panels, CCDs, thin film magnetic heads, micromachines, and the like.

[0002]

2. Description of the Related Art The progress of semiconductor technology has been increasing more and more in recent years, and the progress of fine processing technology has been remarkable accordingly. In particular, the optical processing technology, which is the center of the technology, has advanced to the processing in the sub-micron region with 1 mega dynamic RAM (MDRAM) as a boundary. In optical processing, what has been used so far as a means for improving the resolution is a technique of fixing the exposure wavelength and increasing the NA of the optical system. However, recently, the exposure wavelength is changed from g-line to i-line, and the exposure wavelength is changed to 248 nm and 193 nm by using an excimer laser.
With the use of projection exposure equipment shortened, the wavelength of the light source is expected to become shorter.

In a conventional projection exposure apparatus, a reticle alignment mark and a wafer alignment mark are photoelectrically detected to adjust the wafer position for alignment, and then the pattern on the reticle is excimered. The wafer is exposed by the illumination light from the laser.

As a method of alignment, a method of performing alignment using light having a wavelength different from that of the excimer laser,
Alternatively, a method is known in which an excimer laser is also used as a light source for alignment and alignment is performed in synchronization with a pulse wave from the excimer laser.

In the method of performing alignment using light having a wavelength different from that of the excimer laser, since the exposure wavelength and the alignment wavelength are different, the distortion map is different for two wavelengths even if the chromatic aberration of the projection lens is corrected. However, there is a problem that an alignment offset based on the lens distortion is required, and the alignment accuracy is lowered.

FIG. 9 is a schematic view showing a main portion of a projection exposure apparatus using a conventional excimer laser as a light source. Figure 9
This projection exposure apparatus solves the above problem by performing projection exposure and alignment using excimer laser light. In the figure, reference numeral 901 denotes a light source, which is an excimer laser in this embodiment. 902
Is a diverging lens, 903, 905 and 908 are lenses, 90
4, 909 and 911 are mirrors. A fly-eye lens 910 forms a large number of secondary light sources. Reference numeral 912 is a condenser lens, and 913 is a reticle, and a pattern to be projected and printed is formed on one surface thereof. 91
Reference numeral 3a is a mark for alignment provided on the reticle 913. Reference numeral 914 is a projection lens. A stage 915 moves the wafer 919. 916 is stage 9
The reference mark for alignment provided on the reference numeral 15
A driving device 7 drives the stage 915. 918
Is an interferometer that detects the amount of movement of the stage 915.
Reference numeral 19a is an alignment mark on the wafer 919.

Divergent lens 902, lenses 903, 90
5, 908, mirrors 904, 909, 911, fly-eye lens 910, condenser lens 912, etc., each constitute an element of the illumination optical system, and the light source 901, the illumination optical system, reticle 913, the projection lens 914, etc., respectively. It constitutes one element of the projection optical system.

Reference numeral 921 is a condenser lens, and 922a to 922f.
Is a lens, 933 and 934 are mirrors, 925 is a half mirror, 926 is an objective lens, 927 is a mirror, and 928 is a lens. Reference numeral 929 denotes a camera that captures an alignment image, and 930 denotes a processing device that calculates the amount of misalignment of the alignment mark.

Lenses 922a to 922f and mirror 93
3, 934, half mirror 925, objective lens 926,
The mirror 927, the lens 928, the camera 929, etc. each constitute one element of the alignment optical system.

Reference numeral 906 denotes a mirror, which is driven by a driving device 907 and switches the light from the laser to the alignment optical system side when it moves into the illumination optical path. The mirror 906 indicated by the arrow and the dotted line in FIG. 9 indicates that the mirror 906 moves between the position indicated by the solid line and the position indicated by the dotted line in order to extract the alignment light. 920 is a light source 9
01, the respective drive devices 907 and 917, the interferometer 918, the processing device 930, and the like.

Next, regarding the operation of this conventional example, the operation related to the projection optical system will be described first. The pulsed light from the excimer laser 901 whose lighting is controlled by the control device 920 is spread to an appropriate size by the diverging lens 902, and passes through the lens 903, the mirror 904, the lenses 905 and 908, and the mirror 909 to the fly-eye lens 910. Be guided. Uniform illumination light generated by a large number of secondary light sources formed by the fly-eye lens 910 illuminates the pattern on the reticle 913 via the mirror 911 and the condenser lens 912.

The pattern on reticle 913 is projected onto wafer 919 by projection lens 914. The control device 920 monitors the position of the stage 915 with the interferometer 918, sends a control signal to the driving device 917,
Drive 15

The stage 915 is driven so as to repeat step-and-repeat. Excimer laser 9
01 is controlled to emit light in synchronization with the driving of the stage 915. By the above operation, the pattern of the reticle 913 is sequentially printed on the wafer 919.

Prior to the baking, alignment for positioning the wafer 919 at the correct position is performed, which will be described. The alignment optical system is a reticle 913.
The alignment is performed by using the alignment mark 913a, the alignment mark 919a on the wafer 919, and the alignment reference mark 916 of the stage 915.

The light for alignment is reflected by the mirror 906.
Take out by. The control device 920 drives the driving device 907 to move the mirror 906 into the optical path of the illumination optical system, and causes the optical path of the light from the light source 901 to fly.
Switch from the 0 side to the alignment optical system side.

As a result, the light is reflected by the mirror 906, and passes through the lenses 922a to 922d, the mirror 933, the lens 922e, the mirror 934, the lens 922f, the half mirror 925, the objective lens 926, and the mirror 927, and the alignment mark 913a. Illuminate. The light that illuminates the alignment mark 913a is further reflected by the projection lens 9
14, the alignment mark 91 on the wafer 919
9a, reference mark 916 for alignment of stage 915
Illuminate.

The return light from each mark returns through the projection lens 914, the mirror 927, and the objective lens 926 to the half mirror 925, where it is reflected and imaged on the image pickup surface of the camera 929 by the lens 928.

The image signal from the camera 929 is arithmetically processed by the processing device 930 to calculate the positional deviation amount of each mark. The result is sent to the control device 920, and the control device 920 feeds back the positional deviation amount to the driving device 917 to correct the positional deviation amount of the wafer 919. The above is the description of the alignment operation.

In this projection exposure apparatus, after aligning the reticle 913 and the wafer 919, the mirror 906 is retracted from the optical path of the light (the position of the dotted line) to the position of the solid line, and the reticle 913 is illuminated by the illumination light. , The pattern on it is reduced by the projection lens 914 and the wafer 919 is reduced.
Project onto and expose.

When the light source and the illumination optical system portion of the conventional projection exposure apparatus shown in FIG. 9 are used in a state where they are open to the outside air in a clean room, the illumination light incident surface of the optical system component has a white surface. It is known that powder adheres. This powder has been found to be ammonium sulfate. Due to the above-mentioned phenomenon, in the conventional projection exposure apparatus, there occurs a problem that the optical components become fogged, the reflectance or the transmittance thereof is lowered, and the illumination efficiency is lowered.

A technique for solving this problem is disclosed in JP-A-4-128.
No. 702 is disclosed. In this publication, the fact that the decomposition of ammonium sulfate starts at about 120 ° C. is used, and the above-mentioned powder adhesion is prevented by keeping the optical components at 120 ° C. or higher.

Another technique for preventing fogging is disclosed in JP-A-6-2022.
No. 43 publication. In this publication, attention is paid to the fact that sulfur dioxide has four absorption bands depending on the first excited state to the fourth excited state, and the reflectance of the reflection condensing member for light in the absorption band is made small. By reducing the reflectance of the reflection / focusing unit, the irradiation amount of light that activates sulfur dioxide is reduced, and thus the production amount of ammonium sulfate is reduced.

It is also known to replace the atmosphere of the portion where it is desired to prevent the reduction of lighting efficiency with clean nitrogen to prevent fogging. In the conventional excimer laser of the projection exposure apparatus of FIG. 9, it is desirable that its light emitting portion (laser body) is installed outside the clean room in order to reduce the running cost. However, in this case, all of the excimer laser light guide section from the excimer laser emission section to the illumination optical system is sealed in the container, and the inside is replaced with nitrogen,
Since the volume of the container becomes large and a very large amount of nitrogen is required, the running cost becomes a problem. Further, if the volume of the portion replaced with nitrogen is large, the cost of the projection exposure apparatus itself will increase.

In particular, the light guide portion from the light emitting portion of the excimer laser of the conventional projection exposure apparatus to the illumination optical system has a structure in which its optical axis can be adjusted when the excimer laser is installed, and the light guide portion is sealed or sealed as described above. Since it has to be a substantially sealed structure, it becomes a complicated structure, which is a problem in terms of space and cost.

Further, in order to prevent a decrease in illumination efficiency, it is necessary to replace nitrogen with nitrogen before operating the exposure apparatus. However, as the area replaced with nitrogen increases, the startup time of the exposure apparatus (up to replacement) There is a problem that the waiting time becomes long.

Further, in order to prevent the deterioration of the illumination efficiency and improve the operation rate and reliability of the exposure apparatus, it is necessary to completely maintain the state of substitution with nitrogen. For that purpose, it is necessary to monitor the replacement state, which causes a problem that the size of the exposure apparatus becomes larger and the cost also increases.

In the conventional projection exposure apparatus shown in FIG. 9, a mirror 933 is further provided for guiding light to the alignment optical system.
I am using 934. Therefore, in order to prevent fogging of the optical element of the alignment optical system including this portion,
The optical path portion including the condenser lens 921 to the mirrors 933 and 934 needs to be hermetically or substantially hermetically sealed with a container and replaced with nitrogen, which results in a large volume of the container.

Further, at that time, since the volume of the hermetically sealed portion is large, the area of the hermetically sealed portion also becomes large, and the possibility of leakage of nitrogen increases, which also increases the consumption of nitrogen.

Further, in the conventional example, it is necessary to replace the space, that is, the space between the condenser lens 921 and the mirror 934, with a container so as to have a closed or nearly closed structure and an expandable structure, and to replace with nitrogen. However, in the case of guiding light to the alignment optical system, if all or a part of the alignment optical system has a moving mechanism, the mechanism becomes more complicated. That is, in the conventional example, it is necessary to make the structure capable of expanding and contracting by the moving mechanism between the entrance portion for guiding light and the portion hermetically or substantially hermetically sealed by the container, which causes a problem in terms of space and cost. .

A technique for solving the above problem is disclosed in Japanese Patent Laid-Open No.
-135128 publication. In this publication,
At least a part of the light source and the illumination optical system of the exposure apparatus is hermetically or nearly hermetically sealed with a container, the interior of the container is filled with an inert gas having a pressure higher than the pressure outside the container, and the inside and / or the container is detected by a detector. The pressure of the supply line of the inert gas into the inside is detected. As a result, the publication proposes that the nitrogen gas consumption flow rate can be reduced, the running cost can be greatly reduced, and the alignment accuracy can be improved.

Further, in JP-A-6-216000, for the purpose of shortening the replacement time with an inert gas to improve the throughput of the apparatus and minimizing the consumption of the inert gas after the replacement, The technical disclosure of a method of controlling the amount of inert gas to be supplied when the oxygen concentration falls below a specified value by monitoring the oxygen concentration in the device is disclosed.

Further, regarding the temperature inside the apparatus, it is known that when the gas inside the apparatus has temperature unevenness, the focus during exposure and the exposure magnification fluctuate due to the temperature unevenness.

[0033]

DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention
According to Japanese Patent Laid-Open No. 2 (1994) -2003, if it is attempted to maintain the optical components at a high temperature of 120 ° C. or higher, the optical components arranged near the light source unit and the light collecting unit can be implemented relatively easily, but other optical components. Must be heated. To heat this optical component to 120 ° C. or higher, a considerably large heat source is required, which is a problem in a projection exposure apparatus that requires strict temperature control.

Furthermore, in the conventional projection exposure apparatus of FIG. 9, an excimer laser is used as a light source for alignment. As disclosed in the above-mentioned publication, in a device using an excimer laser as a light source, fog is likely to occur in an optical component, the reflectance or transmittance of the optical component is reduced, and the illumination efficiency is reduced. Occurs. The above publications mainly describe the illumination optical system. However, when the light from the excimer laser is introduced into the alignment optical system to perform the alignment, the same problem occurs in the optical element, and the alignment accuracy decreases.

At this time, in the alignment optical system, if it is attempted to maintain the optical components at a high temperature to prevent fogging, the characteristics will change due to deformation of the optical components and structural components due to temperature changes, and the positional deviation detection accuracy itself. The problem occurs that

Further, in Japanese Patent Laid-Open No. 6-202243, although the amount of ammonium sulfate produced is reduced even if the reflectance of the reflecting and condensing member for the light in the absorption band is reduced,
The problem of diminishing lighting efficiency still remains, as it does not completely eliminate production.

Further, in Japanese Unexamined Patent Publication No. 10-135128, it is very difficult to fill a substantially closed container with an inert gas having a purity of 100%, and there is a problem that the cost becomes high. In addition, it is known that ozone is generated by the irradiation of excimer laser, which is the mainstream these days, because it contains gas other than inert gas in the nearly airtight container, and it is necessary to consider the effect on the human body. There is. In this publication, the physical quantity of gas in the apparatus is controlled by detecting the pressure, so it is difficult to control the concentration detection or the like for a specific gas.

Further, when the gas state becomes abnormal in the substantially closed space in a state in which the respective substantially closed spaces are filled with the inert gas by the pipe, the cause of the investigation is to investigate the cause of the inert gas and the source of the inert gas. Each branch of the supply line, etc.
It is necessary to confirm whether or not an abnormal state is present in many parts, and it takes a very long time to investigate the cause, and there is a problem that the downtime of the device is lengthened.

The present invention has been made in view of the above problems, and prevents deterioration of illumination efficiency and alignment accuracy due to fogging of an optical element, realizes high resolution, and
It is an object of the present invention to provide a safe and highly accurate projection exposure apparatus that enables quick investigation of the cause in the case of an abnormal gas state, shorten the apparatus downtime, and provide a gas state monitoring method used in the apparatus. In addition, with the expected shortening of wavelengths in the future, it is necessary to seal the inside of the exposure equipment and perform exposure processing under a vacuum condition. Projection exposure has the function of monitoring the condition inside the equipment at that time. It is a further object to provide a device.

[0040]

In order to solve the above-mentioned problems, a projection exposure apparatus of the present invention illuminates a pattern of an original plate with light from a light source as a predetermined illumination light flux by an illumination optical system and projects the pattern. In a projection exposure apparatus for performing projection exposure on a photosensitive object with a lens, the projection exposure apparatus comprises a supply means for filling an inert gas in a container formed by hermetically or substantially hermetically sealing at least a part of the interior, / Or a plurality of detectors for detecting the physical quantity of the gas existing outside the container, a processing method for performing processing when the detector detects an abnormal value, and a means for storing dependency relationship information of the plurality of detectors And are included.

In the present invention, the projection exposure apparatus has means for discriminating an abnormal portion based on the outputs of the plurality of detectors and the dependency information, and means for displaying the processing method based on the discrimination result. It is preferable to further have and. In addition, the physical quantity of the gas is
Or the temperature, concentration, pressure of the gas existing outside the container,
And at least one of the flow rates. Further, the projection exposure apparatus preferably displays a physical quantity of the gas detected by the detector on a display.

Further, in the present invention, the projection exposure apparatus includes input means for inputting a physical quantity of the gas, and the physical quantity of the gas detected by the detector exceeds an input value previously input from the input means. In this case, it is possible to display an abnormality on the display. Further, when the output from the detector is abnormal, the projection exposure apparatus can perform device control according to a device control procedure input in advance from the input means. Here, the device control procedure may be included in information including dependency relationship information of the plurality of detectors.

Further, in the present invention, in the projection exposure apparatus, when the physical quantity of the gas detected by the detector exceeds the input value input from the input means, the temperature of the gas supplied by the supply means is increased. , Concentration, pressure,
And further means for adjusting any one or more of the flow rates. Further, the projection exposure apparatus includes a detector for detecting a plurality of physical quantities of the gas, and the projection exposure apparatus judges a detection value from the detector based on a judgment standard pre-input from the input means. It is possible to comprehensively judge the state of the projection exposure apparatus (for example, the state of the inert gas inside the apparatus where the detector is attached).

In order to solve the above problems, the gas state monitoring method of the present invention illuminates a pattern of an original plate with light from a light source as a predetermined illumination light beam by an illumination optical system, and the pattern is projected onto a photosensitive object by a projection lens. In a gas state monitoring method for monitoring a gas state of an apparatus for projection exposure, the apparatus comprises means for filling a container formed by sealing or substantially sealing at least a part of the inside with an inert gas, and inside the container, and And / or a plurality of detectors for detecting at least one physical quantity of the temperature, concentration, pressure, and flow rate of the gas existing outside the container, and the plurality of detectors when the detector detects an abnormal value. And a processing step of performing a device processing based on the information including the dependency relationship information of the detector.

[0045]

BEST MODE FOR CARRYING OUT THE INVENTION A preferred embodiment of the present invention will be described. The projection exposure apparatus of the present embodiment is a projection exposure apparatus that illuminates a pattern on a reticle with light from a light source as a predetermined illumination light flux by an illumination optical system, and projects and exposes the pattern onto a photosensitive object by a projection lens.
At least one detector inside and / or around the device is provided, and any one or more of desired gas concentration, flow rate, temperature, and pressure is detected by the detector.

In the present embodiment, the measured value detected by the detector is displayed on the display. If the measured value detected by the detector is abnormal, the abnormality is displayed on the display. Further, the projection exposure apparatus is controlled so as to limit the operation of the light source and / or a unit inside the apparatus based on the measurement value detected by the detector.

Further, in the present embodiment, when the inert gas is supplied to the inside of the apparatus through the supply line, the supply of the inert gas through the supply line is controlled based on the measurement value detected by the detector. There is. Further, when the inert gas is being supplied to the inside of the apparatus, when the measured value detected by the detector is abnormal, a part or all of the supply lines are closed to stop the supply of the inert gas. .

Further, in the present embodiment, in the case where the inside of the device is kept in a vacuum state, when the measured value detected by the pre-detector is abnormal, a part of the inside of the device or all the enclosed spaces are Vacuum the gas inside the device.

According to this embodiment, the light source, the illumination optical system,
And / or by using the main optical element of the alignment optical system in an atmosphere of an inert gas, for example, nitrogen gas, it is possible to prevent deterioration of illumination efficiency and alignment accuracy due to fogging of the optical element in the apparatus, and to achieve high-resolution projection. An exposure apparatus can be realized. At the same time, by comprehensively monitoring the temperature, concentration, flow rate, and pressure of the gas at that time, it is possible to immediately investigate the cause in the event of a gas state abnormality, reduce equipment downtime, and ensure safe and high-level operation. An accurate projection exposure apparatus can be obtained.

[0050]

EXAMPLES Next, examples of the present invention will be described in detail. [Embodiment 1] FIG. 1 is a schematic view showing the arrangement of a scanning exposure apparatus according to an embodiment of the present invention. This exposure apparatus has a density / temperature / flow rate / pressure detector (detector). In the present embodiment, a reticle is irradiated with a light beam emitted from a light source of a pulse laser through an illumination optical system, and a circuit pattern formed on the reticle is coated with a photoconductor by a projection lens (projection optical system). 1 shows a scanning type exposure apparatus for scanning, reducing, projecting and printing on a wafer).
It is suitable for manufacturing semiconductor devices such as C and LSI, imaging devices such as CCD, and devices such as magnetic heads.

In FIG. 1, reference numeral 1 denotes a light source, which is composed of a pulse laser such as an excimer laser and emits pulse light. Reference numeral 2 denotes a beam shaping optical system, which shapes the light flux from the light source 1 into a predetermined illumination shape and makes it incident on the light incident surface 3 a of the optical integrator 3. The beam shaping optical system 2 is provided with, for example, a σ stop turret (not shown). The optical integrator 3 is composed of a fly's eye lens or the like made up of a plurality of minute lenses, and forms a plurality of secondary light sources near the light exit surface 3b thereof. Four
Is a condenser lens, and the movable slit (masking blade) 5 is Koehler-illuminated by the light flux from the secondary light source in the vicinity of the light exit surface 3b of the optical integrator 3.

The luminous flux illuminating the masking blade 5 is
The reticle 8 is illuminated via the imaging lens 6 and the mirror 7. The masking blade 5 and the reticle 8 are in an optically conjugate positional relationship, and the shape and size of the illumination area of the reticle 8 are defined by the opening shape of the masking blade 5.
The masking blade 5 is provided with, for example, a voice coil motor (not shown), and controls the movement of the masking blade 5 in the optical axis direction.

The beam shaping optical system 2, the optical integrator 3, the condenser lens 4, the movable slit 5, the imaging lens 6, the mirror 7 and the like serve as illumination means (exposure light supply means) for supplying exposure light to the reticle 8. It constitutes one element. Further, the illuminating means includes a light reducing means (not shown), which is configured to adjust the light quantity of the light flux from the light source 1 in multiple stages. The reticle 8 has a circuit pattern on it and is held by the reticle stage 9. A projection lens (projection optical system) 10 reduces and projects the circuit pattern of the reticle 8 onto a semiconductor substrate (wafer) 11. The surface of the wafer 11 is coated with a resist, which is a photoconductor, and is placed on a wafer stage 12 which is three-dimensionally displaced. The surface of the wafer 11 as a photosensitive object is in a position conjugate with the movable slit 5.

101 is a stage drive control system (scanning means)
Thus, the reticle stage 9 and the wafer stage 12 are controlled so as to move in the opposite directions at a speed that is exactly the same as the imaging magnification of the projection lens 10 and at a constant speed. Further, the operation of the reticle stage 9 and the wafer stage 12 is restricted by a signal from the main control system 104. 1
A laser control system 03 controls the supply of power to the pulse laser light source 1 in response to a command from the main control system 104.

The beam shaping optical system 2 is hermetically or substantially hermetically sealed, and is purged with an inert gas from a valve (A) 18 through a pipe. The control of the flow rate of the purge gas with respect to the beam shaping optical system 2 is performed by controlling the valve (B) 19 according to a command output by the valve / flow rate control system 107 based on the measurement value of the flow meter (B) 22. . Further, the inside of the beam shaping optical system 2 includes a concentration detector (A) 1
3. The desired gas is monitored by the temperature detector (A) 24 and the pressure detector (A) 27. Control of these detectors is performed by a sensor controller 102 described later.

Similarly, the projection lens 10 is also hermetically or substantially hermetically sealed, and the flow rate of the inert gas to the projection lens 10 is controlled by the valve (C) 20 and the flow meter (C) 23, The concentration, temperature, and pressure inside the lens 10 are measured by the concentration detector (B) 14 and the temperature detector (B), respectively.
25, which is monitored by the pressure detector (B) 28. Further, the desired gas in the chamber 17 is monitored by the concentration detector (C) 15, the temperature detector (C) 26, and the pressure detector (C) 29. In this embodiment, the desired gas is oxygen, ozone, ammonium sulfate ((NH ₄ ) ₂ SO ₄ ), or the like.

The sensor controller 102 receives the desired concentration, temperature, and pressure range values 109 input from the input section 105 via the main control system 104, compares them with the output values of the respective sensors, and outputs the comparison results to the main. It is transmitted to the control system 104.

The valve / flow rate control system 107 receives a desired flow rate range value input from the input section 105 via the main control system 104, and controls the valves 18, 19 and 20 so that the purge gas has a desired flow rate. In addition to the control, the opening / closing of the valves 18, 19 and 20 is also controlled by a command from the main control system 104.

In the present embodiment, the beam shaping optical system 2 and the projection lens 10 are closed or purged with an inert gas as an almost closed container. However, the chamber 17 is closed, and the chamber 17 is closed with an inert gas. Purging may be performed, or the optical path of the exposure light and the alignment optical system (not shown) may be closed or substantially closed as a sealed container and may be purged with an inert gas.

In this embodiment, one detector is attached to one closed container, but a plurality of detectors may be attached.

Next, the operation of the apparatus shown in FIG. 1 will be described. The pulsed light from the pulsed laser light source 1 whose lighting is controlled by the laser control system 103 passes from the beam shaping optical system 2 to the mirror 7 and becomes a predetermined illumination light flux to illuminate the pattern on the reticle 8.

The pattern on the reticle 8 is the projection lens 1
0 is projected onto the wafer 11. The stage drive control system 101 includes a reticle stage 9 and a wafer stage 12.
The reticle stage 9 and the wafer stage 12 are driven so as to repeat step-and-repeat. The excimer laser 1 is controlled so as to emit light in synchronization with the driving of the reticle stage 9 and the wafer stage 12. By the above operation, the pattern of the reticle 8 is sequentially printed on the wafer 11.

The effective range of the temperature of the gas which has been set in advance for each of the temperature detectors 24 to 26 and each of the temperature detectors 24 to 26
The output of 26 is compared by the sensor controller 102, and when it exceeds the effective range, the main control system 104 outputs a temperature abnormality signal to the stage drive control system 101, the laser control system 103, and the valve / flow rate control system 107. To do. Pressure detector 27 to pressure detector 29, concentration detector 13 to concentration detector 1
The same processing is performed in No. 5.

The stage drive control system 101 receives a signal from the main control system 104 and performs a predetermined process. At this time, the operations of both stages 9 and 12 may be stopped.

In the laser control system 103, the main control system 104
In response to the signal from, the laser oscillation is restricted, for example, the power supply to the laser 1 is stopped.

In the valve / flow rate control system 107, the main control system 10
In response to the signal from the No. 4, the control of each valve 18, 1 to stop the flow rate of the inflowing gas or conversely increase the flow rate.
Perform every 9 and 20. Especially with laser oscillation, chamber 1
Ozone is generated inside 7. Since this ozone adversely affects the human body, the concentration detector (C) 15 may detect the ozone concentration.

ArF laser (1
(93 nm), the wavelength of the laser is a wavelength absorption band of oxygen, which may reduce the amount of light due to oxygen in the optical path, but the concentration detector (B) 14 and / or the temperature detector (B) By using an oxygen concentration detector for 25, it becomes possible to prevent a decrease in the amount of light.

Regarding temperature detection, by detecting the temperature distribution inside the apparatus, it is possible to minimize the influence of the temperature distribution inside the apparatus on the image performance.

In order to prevent deterioration of image performance due to impurities contained in the supply gas such as sulfur dioxide, a nitrogen densitometer is installed in the apparatus as a density detector (A) 13 to a density detector (C) 15.
It is possible to monitor the degree of filling of the nitrogen concentration by attaching to the, and it is also possible to limit the emission of the laser when the nitrogen concentration is lower than the desired concentration. This makes it possible to prevent deterioration of the image due to ammonium sulfate adhering to the surface of the optical device.

Further, each valve 1 is controlled by each flow meter 21-23.
It is possible to monitor the flow rate of the purge gas passing through 8 to 20, and when the flow rate decreases due to disconnection of the pipe or the like, the status is displayed on the display unit 106 and the main control system 104 Controls each unit.

FIG. 2 is a flow chart for explaining the operation of the apparatus of FIG. 1 when controlling the state of the desired gas inside it. In the figure, first, in step 201,
Input the desired gas concentration in the measurement target part (detection part) by the detector installed inside the device, the temperature of the detector installation part, and the effective range of the flow rate of the inactive gas flowing in.
Next, in step 202, a table that associates the error output from each detector with the processing content after the error occurs is created. In step 203, the effective range of the physical quantity of gas input in step 201 is set for the control system controlling each detector. In step 204, the control system requests measurement values from each detector. Step two
In 05, the output from each measuring device is compared with the effective range set in step 203, and the measured value is within the effective range (N
If it is O), the measurement value is requested again to the detector, but if the measurement value is outside the valid range (in the case of YES), the process proceeds to step 206. In step 206, each control system notifies the main control system that the measured value is outside the valid range.

In step 207, the error generated in step 205 is searched from the table of the error and the processing method preset in step 202, and the process corresponding to the error generated is executed. As the processing method performed in step 207, processing such as sounding a buzzer on the device, displaying an error message on the screen, and limiting a unit in the device (for example, stage drive, laser oscillation) is performed.

Next, the device control information when the measured value is abnormal will be described with reference to FIG. 1 and Table 1 below.

[0074]

[Table 1]

Table 1 is a table in which the factors that cause the abnormal values in the measured values of the detectors and how to deal with them are summarized. This table (information) is input by the input unit 105 in advance.

Table 1 defines the type of anomaly detector that generated an abnormal value, the possible causes when the anomaly occurs, the coping method when the cause can be pursued, and the device control contents when the anomaly occurs. . Table 1 shows some of the plurality of detectors shown in FIG. For example, when the flow meter (A) 21 detects an abnormal value, the main control device 104 controls the entire device according to the device control content of D-1. Specifically, the device is stopped, and an error display and a coping method are displayed.
In this case, the coping method specified in C-1 is displayed.

Next, the case where abnormal values occur in a plurality of detectors will be described. When an abnormal value occurs in the flow meter (B) 22 of A-2, the valve (B) 19, the flow meter (A) 21, and the valve are provided on the supply side of the pipe with the flow meter (B) 22. Since (A) 18 is attached, the cause of abnormality detection by the flow meter (B) 22 may be any one of the valve (B) 19, the valve (A) 18, and the supply source (not shown). is there. Therefore, in the apparatus control when this abnormal value occurs, the state of the flow meter (A) 21 is confirmed in order to confirm the state of the supply source after the apparatus is stopped. here,
If an abnormal value has occurred, there is an error cause on the supply source side rather than the flow meter (A) 21, so transition to A-1
Follow the process defined in D-1. Flow meter (A) 21
If the value is normal, the cause of the abnormal value is the flow meter (A) 21.
To the valve (B) 19 between the flow meter (B) 22 and the flow meter (B) 22. In that case, an error is displayed and a coping method (C-2) is displayed. The temperature detector shown in A-3,
The device control is similarly performed for the pressure detector shown in A-4.

Regarding the control contents of column D in Table 1,
When the output of the temperature detector is in an abnormal state, a means for early recovery from the abnormal state may be taken by controlling the flow rate of the detection unit. Further, as the unit control after the error detection, the valve 20 for supplying the gas to the lens portion may be finely adjusted in order to stop the gas supply to the lens sensitive to the physical quantity of gas.

Further, when the gas physical quantity detection reveals a substantially closed / closed container in which the concentration of the supplied inert gas is insufficient, by controlling only the valve attached to the container, the inert gas other than that container is controlled. It becomes possible to supply a small amount of gas to the purge unit with sufficient gas concentration,
It is possible to limit the amount of gas used and reduce costs. When the ozone concentration is detected by the concentration detector (C) 15, when all the detected values have an abnormal threshold value, all valves 18, 1
It is also possible to refill the inside of the device with an inert gas by performing a process of discharging ozone inside the device by opening 9 and 20 to the maximum.

Next, the automatic error detection and automatic recovery operation during the exposure process will be described with reference to FIG. This is an example in which the gas physical quantity at a desired position (detection unit) is detected and the exposure operation cannot be restarted unless the gas physical quantity falls within a predetermined value.

FIG. 3 is a flow chart showing the exposure sequence of the apparatus of FIG. The operation of this embodiment will be described below with reference to FIGS. 1, 2, and 3.

When the exposure sequence of FIG. 3 is started,
Before loading the wafer 11 onto the wafer stage 12, in step 301, the sensor controller 102 causes the gas detectors (A to C) 13 to 15, 24 to 26, and 27 to 29 to detect the gas inside the exposure apparatus. To measure the physical quantity of. In step 302, the measurement value and the input unit 105 are input in advance,
Compare with the specified range stored in the main control system 104,
If the detected value is within the specified range (detection result ≦ predetermined range), it is determined that the gas physical quantity control inside the device is properly performed, and the process proceeds to step 305. If step 302
If the detected value exceeds the specified range in (detection result> predetermined range), an error is displayed on the display unit 106 in step 303 to warn, and in step 304 the main control system 104 stops the exposure sequence and waits for restart. Put in a state. Here, in the case where the operator waits for input, even if the exposure sequence is restarted, the physical quantity of gas inside the apparatus is measured again by step 301 and step 302,
If it exceeds the predetermined range, the process waits again for restart in step 304, and the exposure operation is controlled so that it cannot be restarted.

Next, in step 305, the wafer 11 is carried into the wafer stage 12. In step 306, an exposure process of projecting and exposing the pattern of the reticle 8 onto the wafer 11 is performed. When the exposure processing for one wafer is completed, the wafer 11 is unloaded in step 307, and it is determined in step 308 whether the unloaded wafer is the final wafer. If it is not the final wafer in step 308,
In step 309, the physical quantity of gas in each part of the exposure apparatus is measured as in step 301. Here, in the case of the final wafer in step 308, the main exposure sequence ends. Further, steps 310 to 312 perform the same processing as steps 302 to 304, respectively.

The exposure sequence described above is applied to the wafer 1
This is a flowchart for controlling the gas physical quantity measurement value in the exposure apparatus for each wafer and stopping the exposure operation so that the exposure process cannot be restarted. Is measured and the exposure process is stopped, the same effect can be obtained.

Incidentally, in the restart waiting in steps 304 and 312, the timer may be restarted automatically after waiting for a certain time. In this case, it is possible to automatically control the stop and restart of the exposure process.

In this embodiment, by detecting the light source, the illumination optical system, and / or the physical quantity of the gas inside the apparatus, it is possible to prevent the illumination efficiency from deteriorating and realize a high resolution. At the same time, in the present embodiment, a safe and high-performance projection exposure apparatus can be achieved by detecting the generation state of gas that adversely affects the human body and the apparatus generated when the apparatus is operating. Furthermore, in the present embodiment, by comprehensively judging the gas generation status, the cause of the error occurrence can be easily identified, and the downtime of the apparatus can be shortened.

[Example of Semiconductor Production System] Next, a device such as a semiconductor (a semiconductor chip such as an IC or an LSI, a liquid crystal panel, a CC, etc.) using the above-described projection exposure apparatus.
D, thin film magnetic head, micromachine, etc.) will be described as an example. This is to carry out maintenance services such as trouble response, periodic maintenance, or software provision of a manufacturing apparatus installed in a semiconductor manufacturing factory using a computer network or the like outside the manufacturing factory.

Table 1 shows the whole system cut out from a certain angle. In the figure, reference numeral 401 denotes a business office of a vendor (apparatus supply maker) that provides a semiconductor device manufacturing apparatus. As an example of a manufacturing apparatus, a semiconductor manufacturing apparatus for various processes used in a semiconductor manufacturing factory, for example,
Pre-process equipment (lithography equipment such as exposure equipment, resist processing equipment, etching equipment, heat treatment equipment, film forming equipment,
Flattening equipment, etc.) and post-process equipment (assembling equipment, inspection equipment, etc.) are assumed. In the business office 401, a host management system 40 that provides a maintenance database for manufacturing equipment is provided.
8, a plurality of operation terminal computers 410, and a local area network (LAN) 409 connecting these to construct an intranet or the like. Host management system 4
08 is provided with a gateway for connecting the LAN 409 to the Internet 405, which is an external network of the office, and a security function for restricting access from the outside.

On the other hand, reference numerals 402 to 404 denote semiconductor manufacturers (semiconductor device manufacturers) as users of manufacturing equipment.
Manufacturing plant. The manufacturing factories 402 to 404 may be factories belonging to different makers or may be factories belonging to the same maker (for example, a pre-process factory, a post-process factory, etc.). In each of the plants 402 to 404, a plurality of manufacturing apparatuses 406, a local area network (LAN) 411 that connects them to construct an intranet, and a host as a monitoring apparatus that monitors the operating status of each manufacturing apparatus 406 are provided. A management system 407 is provided. The host management system 407 provided in each factory 402 to 404 includes a gateway for connecting the LAN 411 in each factory to the Internet 405 which is an external network of the factory. As a result, the host management system 408 on the vendor 401 side can be accessed from the LAN 411 of each factory via the Internet 405, and only the limited user is permitted to access due to the security function of the host management system 408. Specifically, via the Internet 405,
The factory side notifies the vendor side of status information indicating the operating status of each manufacturing apparatus 406 (for example, a symptom of the manufacturing apparatus in which a trouble has occurred), and response information corresponding to the notification (for example, a troubleshooting method is instructed). Information to
It is possible to receive maintenance information such as countermeasure software and data), the latest software, and help information from the vendor side. A communication protocol (TCP / IP) generally used on the Internet is used for data communication between the factories 402 to 404 and the vendor 401 and data communication on the LAN 411 in each factory. In addition,
Instead of using the Internet as an external network outside the factory, it is also possible to use a leased line network (ISDN or the like) having high security without being accessed by a third party. Further, the host management system is not limited to one provided by a vendor, and a user may construct a database and place it on an external network to permit access from a plurality of factories of the user to the database.

Now, FIG. 5 is a conceptual diagram in which the entire system of this embodiment is cut out from an angle different from that in Table 1 and expressed. In the above example, a plurality of user factories each provided with a manufacturing apparatus are connected to a management system of a vendor of the manufacturing apparatus via an external network, and production management of each factory or at least one unit is performed via the external network. Was used for data communication of information on the manufacturing equipment. On the other hand, in this example, a factory equipped with manufacturing equipment of a plurality of vendors and a management system of each vendor of the plurality of manufacturing equipments are connected by an external network outside the factory, and maintenance information of each manufacturing equipment is displayed. It is for data communication. In the figure, reference numeral 501 denotes a manufacturing plant of a manufacturing apparatus user (semiconductor device manufacturer), and a manufacturing apparatus for performing various processes on the manufacturing line of the factory, here, as an example, an exposure apparatus 502, a resist processing apparatus 503,
A film forming processing device 504 is introduced. Although only one manufacturing factory 501 is illustrated in FIG. 5, a plurality of factories are actually networked in the same manner. The respective devices in the factory are connected by a LAN 506 to form an intranet or the like, and the host management system 505 manages the operation of the manufacturing line. On the other hand, an exposure apparatus maker 510, a resist processing apparatus maker 520, a film forming apparatus maker 530, etc.
Each business site of the vendor (device supplier) is provided with host management systems 511, 521, 531 for performing remote maintenance of the supplied equipment, respectively, and these are provided with the maintenance database and the gateway of the external network as described above. . The host management system 505 that manages each device in the user's manufacturing factory and the vendor management systems 511, 521, and 531 of each device are the external network 50.
It is connected by the Internet or a leased line network which is 0. In this system, if a trouble occurs in any of the series of manufacturing equipment on the manufacturing line, the operation of the manufacturing line is suspended, but the vendor of the equipment in trouble receives remote maintenance via the Internet 500. This enables quick response and minimizes production line downtime.

Each manufacturing apparatus installed in the semiconductor manufacturing factory has a display, a network interface, and a computer for executing the network access software and the apparatus operation software stored in the storage device. The storage device is a built-in memory, a hard disk, a network file server, or the like. The network access software includes a dedicated or general-purpose web browser, and provides a user interface having a screen, an example of which is shown in FIG. 6, on the display. The operator who manages the manufacturing equipment in each factory refers to the model of the manufacturing equipment (6
01), serial number (602), trouble subject (603), date of occurrence (604), urgency (605), symptom (606), coping method (607), progress (608), etc. on the screen. Fill in the input fields. The entered information will be sent to the maintenance database via the Internet,
The resulting appropriate maintenance information is returned from the maintenance database and presented on the display. Further, the user interface provided by the web browser further realizes a hyperlink function (610, 611, 612) as shown in the figure, so that the operator can access more detailed information of each item or from a software library provided by the vendor. It is possible to pull out the latest version of software used for the manufacturing apparatus, or pull out an operation guide (help information) to be used as a reference for the factory operator. Here, the maintenance information provided by the maintenance database includes the information about the present invention described above, and the software library also provides the latest software for implementing the present invention.

Next, a semiconductor device manufacturing process using the above-described production system will be described. Figure 7
1 shows an overall manufacturing process flow of a semiconductor device. In step 1 (circuit design), the circuit of the semiconductor device is designed. In step 2 (mask manufacturing), a mask having the designed circuit pattern is manufactured. On the other hand, in step 3 (wafer manufacturing), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by the lithography technique using the mask and the wafer prepared above. The next step 5 (assembly) is called a post-process, which is a process of forming a semiconductor chip using the wafer manufactured in step 4, and an assembly process (dicing,
Assembling process such as bonding) and packaging process (chip encapsulation). In step 6 (inspection), the semiconductor device manufactured in step 5 undergoes inspections such as an operation confirmation test and a durability test. A semiconductor device is completed through these processes and shipped (step 7). The front-end process and the back-end process are performed in separate dedicated factories, and maintenance is performed for each of these factories by the remote maintenance system described above. Also, between the front-end factory and the back-end factory,
Information and the like for production management and equipment maintenance are data-communicated via the Internet or a leased line network.

FIG. 8 shows a detailed flow of the wafer process. In step 11 (oxidation), the surface of the wafer is oxidized. In step 12 (CVD), an insulating film is formed on the wafer surface. In step 13 (electrode formation), electrodes are formed on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted in the wafer. Step 1
In 5 (resist processing), a photosensitive agent is applied to the wafer. In step 16 (exposure), the circuit pattern of the mask is printed and exposed on the wafer by the projection exposure apparatus described above. In step 17 (development), the exposed wafer is developed. In step 18 (etching), parts other than the developed resist image are removed. In step 19 (resist stripping), the resist that is no longer needed after etching is removed.
By repeating these steps, multiple circuit patterns are formed on the wafer. Since the manufacturing equipment used in each process is maintained by the remote maintenance system described above, troubles can be prevented in advance, and even if troubles occur, quick recovery is possible, and Productivity can be improved.

[0094]

As described above, according to the present invention,
By detecting the physical quantity of the inert gas (for example, nitrogen gas) in the light source, the illumination optical system, and / or the apparatus with a plurality of detectors and processing it by the processing means, it is possible to prevent the reduction of the illumination efficiency and to obtain a high resolution A projection exposure apparatus that can be realized is obtained. At the same time, according to the present invention, a safe and high-performance projection exposure apparatus can be achieved by detecting the generation state of gas that adversely affects the human body and the apparatus when the apparatus is in operation. Further, according to the present invention, by comprehensively judging the gas generation state, the cause of the error occurrence can be easily identified, and the downtime of the apparatus can be shortened.

Further, according to the gas state monitoring method of the present invention, as described above, the physical quantity of the inert gas is detected by the plurality of detectors and processed by the processing step, so that in the case of the gas state abnormality, the immediate cause is detected. It is possible to investigate and reduce the downtime of the equipment equipped with the gas state monitoring method,
It can be a safe and highly accurate device.

[Brief description of drawings]

FIG. 1 is a schematic diagram showing a configuration of a scanning type exposure apparatus having a concentration / temperature / flow rate / pressure detector in one embodiment of the present invention.

FIG. 2 is a flowchart illustrating an operation when controlling a desired gas state inside the apparatus according to an embodiment of the present invention.

FIG. 3 is a flowchart showing an exposure sequence according to an embodiment of the present invention.

FIG. 4 is a conceptual view of a semiconductor device production system including an exposure apparatus according to an embodiment of the present invention viewed from a certain angle.

FIG. 5 is a conceptual view of a semiconductor device production system including an exposure apparatus according to an embodiment of the present invention as viewed from another angle.

FIG. 6 is a diagram showing a specific example of a user interface in a semiconductor device production system including an exposure apparatus according to an embodiment of the present invention.

FIG. 7 is a diagram illustrating a flow of a device manufacturing process by the exposure apparatus according to the embodiment of the present invention.

FIG. 8 is a diagram illustrating a wafer process by the exposure apparatus according to the embodiment of the present invention.

FIG. 9 is a schematic diagram showing a main part of a projection exposure apparatus that uses an excimer laser as a light source according to a conventional example.

[Explanation of symbols]

1, 901: Light source, 2: Beam shaping optical system, 3: Optical integrator, 3a: Light entrance surface, 3b: Light exit surface, 4,912: Condenser lens, 5: Masking blade, 6: Imaging lens, 7, 904, 906, 90
9,911,933,934,927: Mirror, 8,9
13: reticle, 9: reticle stage, 10: projection lens, 11: wafer, 12: wafer stage, 13: concentration detector A, 14: concentration detector B, 15: concentration detector C, 16: concentration / temperature detection Vessel D, 17: Chamber, 1
8: valve A, 19: valve B, 20: valve C, 21: flow meter A,
22: flow meter B, 23: flow meter C, 24: temperature detector A, 25: temperature detector B, 26: temperature detector C, 27:
Pressure detector A, 28: Pressure detector B, 29: Pressure detector C, 101: Stage drive control system, 102: Sensor controller, 103: Laser control system, 104: Main control system, 10
5: input unit, 106: display unit, 107: valve / flow rate control system, 109: concentration / temperature / flow rate range value, 902: diverging lens, 903, 905, 908: lens, 907, 91
7: drive device, 910: fly-eye lens, 913a:
Reticle 913 alignment mark, 914: projection lens, 915: stage, 916: stage 915 alignment reference mark, 918: interferometer, 919: wafer, 919a: wafer 919 alignment mark, 9
20: control device, 921: condensing lens, 922a, 92
2b, 922c, 922d, 922e, 922f, 92
8: Lens, 925: Half mirror, 926: Objective lens, 929: Camera, 930: Processing device.

Claims (16)

[Claims] 1. A projection exposure apparatus that illuminates a pattern of an original plate with a light from a light source as a predetermined illumination light flux by an illumination optical system, and projects and exposes the pattern onto a photosensitive object by a projection lens. A supply means for filling an inert gas in a container formed by hermetically or substantially hermetically sealing at least a part of the interior, and a plurality of detectors for detecting a physical quantity of gas existing in the container and / or outside the container, A projection exposure apparatus comprising: a processing method for performing processing when the detector detects an abnormal value; and means for storing dependency relationship information of the plurality of detectors. 2. A means for determining an abnormal portion based on outputs of the plurality of detectors and the dependency relationship information, and means for displaying the processing method based on the determination result. The projection exposure apparatus according to claim 1. 3. The physical quantity of the gas is at least one of a temperature, a concentration, a pressure and a flow rate of the gas existing inside the container and / or outside the container. 2. The projection exposure apparatus according to item 2. 4. The physical quantity of the gas detected by the detector is displayed on a display.
4. The projection exposure apparatus according to any one of 3 to 3. 5. An input means for inputting a physical quantity of the gas is provided, and when the physical quantity of the gas detected by the detector exceeds an input value previously input from the input means, an abnormality is displayed on the display. The projection exposure apparatus according to claim 4, which is displayed. 6. The projection exposure apparatus according to claim 5, wherein when the output from the detector is abnormal, the apparatus control is performed according to the apparatus control procedure input in advance from the input means. 7. If the physical quantity of the gas detected by the detector exceeds the input value input from the input means, then the temperature, concentration, pressure, and flow rate of the gas supplied by the supply means are 7. The projection exposure apparatus according to claim 5, further comprising means for adjusting any one or more of the above. 8. The projection exposure apparatus comprises a detector for detecting a plurality of physical quantities of the gas, the detection value from the detector is judged based on a judgment standard previously inputted from the input means, and the projection is performed. The projection exposure apparatus according to any one of claims 5 to 7, wherein the state of the exposure apparatus is comprehensively determined. 9. The projection exposure apparatus according to claim 1, further comprising a display, a network interface, and a computer that executes network software, the maintenance information for the projection exposure apparatus being provided. A projection exposure apparatus that enables data communication via a computer network. 10. The network software comprises:
The projection exposure apparatus is connected to an external network of a factory and provides a user interface on the display for accessing a maintenance database provided by a vendor or a user of the projection exposure apparatus, and the user interface is provided via the external network. The projection exposure apparatus according to claim 9, which makes it possible to obtain information from a database. 11. A gas state monitoring method for monitoring a gas state of a device for illuminating a pattern of an original plate with a light from a light source as a predetermined illumination light flux by an illumination optical system and projecting and exposing the pattern onto a photosensitive object by a projection lens. The apparatus comprises means for filling an inert gas in a container formed by sealing or substantially sealing at least a part of the inside thereof,
A plurality of detectors for detecting a physical quantity of a gas existing inside and / or outside the container, and a processing method for performing a process when the detector detects an abnormal value, and the plurality of detectors A projection exposure apparatus having a step of storing dependency relationship information. 12. A step of installing a manufacturing apparatus group for various processes including the projection exposure apparatus according to claim 1 in a semiconductor manufacturing factory, and a plurality of processes using the manufacturing apparatus group. And a step of manufacturing a semiconductor device according to the present invention. 13. Data communication of information relating to at least one of the manufacturing apparatus group between the step of connecting the manufacturing apparatus group by a local area network, and between the local area network and an external network outside the semiconductor manufacturing factory. The method for manufacturing a semiconductor device according to claim 12, further comprising: 14. A database provided by a vendor or a user of the projection exposure apparatus is accessed through the external network to obtain maintenance information of the manufacturing apparatus by data communication, or a semiconductor manufacturing different from the semiconductor manufacturing factory. The semiconductor device manufacturing method according to claim 13, wherein production management is performed by data communication with a factory via the external network. 15. A manufacturing apparatus group for various processes including the projection exposure apparatus according to claim 1.
A local area network for connecting the manufacturing apparatus group, and a gateway that enables access from the local area network to an external network outside the factory,
A semiconductor manufacturing plant, which enables data communication of information relating to at least one of the manufacturing apparatus group. 16. The method according to claim 1, which is installed in a semiconductor manufacturing factory.
10. The maintenance method for a projection exposure apparatus according to any one of items 10 to 10, wherein a vendor or a user of the projection exposure apparatus provides a maintenance database connected to an external network of a semiconductor manufacturing factory, and the semiconductor. And a step of permitting access to the maintenance database from within the manufacturing factory via the external network, and a step of transmitting the maintenance information accumulated in the maintenance database to the semiconductor manufacturing factory side via the external network. And a method for maintaining a projection exposure apparatus.