JP2001284223A - Exposure system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an exposure system, wherein a fluorine (F2) excimer laser beam is used, and an optical axis can be easily aligned. SOLUTION: An exposure system projects a mask pattern onto a photosensitive substrate using a fluorine excimer laser as a light source, where the beam of the excimer laser whose wavelengths are in a wavelength range of vacuum ultraviolet rays are used as an exposure light, and an optical axis aligning means in which visible light or infrared beams emitted from the fluorine excimer laser at the same time are used is provided. At this point, visible light or infrared beams which are used in the optical axis aligning means are wave front-split by a dichroic mirror provided in a lighting system and guided to the outside of the lighting system through a glass window, the position of a visible light beam or an infrared beam is detected with a sensor such as a photoelectric conversion device or the like, and an optical member such as a dichroic mirror or the like is controlled on a real time based on the above detection result so as to make the optical axis of a lighting system and the center of a laser beam coincident with each other.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus that uses a fluorine excimer laser as a light source and irradiates a mask pattern onto a photosensitive substrate via a projection optical system, and more particularly to an exposure apparatus that facilitates optical axis alignment of the laser light. Related to the device.

[0002]

2. Description of the Related Art Conventionally, in the process of manufacturing a semiconductor device formed from an ultra-fine pattern such as an LSI or a super LSI, a circuit pattern drawn on a mask is reduced and projected onto a substrate coated with a photosensitive agent and printed. A reduction type projection exposure apparatus is used. As the mounting density of semiconductor elements has increased, further miniaturization of patterns has been demanded, and the development of resist processes has responded to the miniaturization of exposure apparatuses.

As means for improving the resolving power of the exposure apparatus, there are a method of changing the exposure wavelength to a shorter wavelength and a method of increasing the numerical aperture (NA) of the projection optical system.

With respect to the exposure wavelength, a KrF excimer laser having an oscillation wavelength of about 248 nm from an i-line of 365 nm and an Ar having an oscillation wavelength of about 193 nm have recently been used.
An F excimer laser is being developed. In addition, 15
A fluorine (F ₂ ) excimer laser having an oscillation wavelength of about 7 nm has been developed.

Generally, an exposure apparatus is provided separately from a laser light source. For example, FIG. 4 of Japanese Patent Application Laid-Open No. 11-121363 discloses that a laser device is placed under a floor below a floor and an exposure apparatus main body is placed on the floor. As described above, when the exposure apparatus is placed separately from the laser light source, the light flux is temporally shifted with respect to the optical axis of the illumination optical system due to vibration from the floor during printing exposure, which causes uneven exposure. Had become.

In this respect, a fluorine (F ₂ ) excimer laser having an oscillation wavelength of about 157 nm of far ultraviolet rays is not visible light, so that it is more difficult to align the optical axis than visible light. Therefore, a complicated method of preparing a HeNe laser separately from the excimer laser, making it coaxial with the exposure light, and then performing assembly adjustment of the optical system with the HeNe laser has been used.

It is known that a fluorine (F ₂ ) excimer laser having an oscillation wavelength of about 157 nm has a plurality of oxygen (O ₂ ) absorption bands in a band near these wavelengths. In this wavelength region, light is largely absorbed by oxygen molecules, so that the atmosphere hardly transmits light, and can be applied only in an environment in which the pressure is reduced to a level close to vacuum and the oxygen concentration is sufficiently reduced. Literature, `` Photochemistry of Sm
all Molecules "(Hideo Okabe, A Wiley-Interscien
According to ce Publication, 1978, p. 178), the absorption coefficient of oxygen for light having a wavelength of 157 nm is about 190 at.
m ^-1 cm ^-1 . This is because when light having a wavelength of 157 nm passes through a gas having an oxygen concentration of 1% at 1 atm, the transmittance per 1 cm is T = exp (−190 × 1 cm × 0.01 atm) =
0.150.

[0008] Oxygen (O ₃ ) is generated by oxygen absorbing the above-mentioned light, and this ozone further increases the absorption of light and remarkably lowers the transmittance. Objects adhere to the surface of the optical element and reduce the efficiency of the optical system.

Therefore, in the optical path of the exposure optical system of the projection exposure apparatus using a far ultraviolet ray as a light source, such as an ArF excimer laser or a fluorine (F ₂ ) excimer laser, the purging means by an inert gas such as nitrogen is used in the optical path. A method has been adopted in which the concentration of existing oxygen is kept at a low level of several ppm or less.

However, frequent adjustment of the exposure apparatus for optical axis alignment has a problem that oxygen may be reentered into the optical path purged in the optical path on the order of several ppm or less.

[0011]

As described above, in an exposure apparatus utilizing a laser beam, although alignment of an optical axis is necessary, an exposure apparatus utilizing a fluorine (F ₂ ) excimer laser beam or the like is required. Optical axis alignment was not easy.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems in the prior art, and has as its object to easily align the optical axis in an exposure apparatus using a fluorine (F ₂ ) excimer laser beam or the like.

[0013]

SUMMARY OF THE INVENTION The present invention provides an optical
If the source emits at least two wavelengths simultaneously, for example,
Ni (F _Two ) Excimer laser light was applied to the vacuum ultraviolet region.
It emits two wavelengths at 6299 nm and 157.5233 nm.
Besides, 741 nm and 756 n in visible light or infrared region
to the fact that light is emitted simultaneously and simultaneously with ultraviolet light at m
It was made based on it. And the visible light or red
Outside light can pass through a glass window made of quartz or the like and be guided into the atmosphere.
It uses what you can do. FIG. 4 shows fluorine (F
_Two ) Shows the wavelength and intensity of excimer laser light. Shown in FIG.
Fluorine (F_Two Excimer laser beam is vacuum purple
157.6299 nm and 157.5233 which are outer bands
In addition to emitting two wavelengths at nm, it is visible or infrared.
It also emits light at 41 nm and 756 nm.

The exposure apparatus of the present invention uses a light from a light source to irradiate a mask pattern onto a photosensitive substrate through a projection optical system. The light source simultaneously emits at least two wavelengths. It is characterized in that a predetermined wavelength included in light from a light source is used as exposure light, and another wavelength from the light source is used for optical axis alignment. Here, a light source that emits visible light or infrared light at the same time as emitting light in the vacuum ultraviolet region can be used as the light source. The wavelength in the vacuum ultraviolet region from the light source can be used as exposure light.

Further, visible light or infrared light from the light source can be used for optical axis alignment. Here, the light source may be an excimer laser. The excimer laser may be a F ₂ laser.

Further, the exposure light is 157.6299n.
and at least one of the wavelengths of 157.5233 nm, and light used for the optical axis alignment is 741n
An F ₂ laser containing at least one of m and 756 nm can be used.

Further, light from the light source can be split by an optical element. Here, a dichroic mirror can split light from the light source into light used for exposure light and light used for optical axis alignment.

[0018] Further, an actuator for driving the optical element can be provided. Here, the light used for the optical axis alignment can be detected, and the actuator can be controlled based on the detection result. The actuator can control a tilt of the optical element. The actuator can drive the optical element in a tilt direction.

Further, in the exposure apparatus according to the present invention, the optical element for splitting the light from the light source may be arranged between the light source and the beam shaping optical system in the illumination optical system, and the beam shaping optical system in the illumination optical system. At least one of between the optical integrator and the optical integrator, between the optical integrator and the front lens group in the illumination optical system, and between the front lens group and the rear lens group in the illumination optical system. Can be provided in several places. Here, a plurality of optical elements for splitting light from the light source and the actuator may be provided. The light split by one of the plurality of optical elements for splitting the light from the light source is detected, and the one optical element can be driven based on the detection result. The driving of one of the plurality of optical elements that splits the light from the light source can be controlled based on the detection result of the light split by the other optical element.

[0020] At least a part of an illumination optical system for irradiating the mask with the light from the light source may be disposed inside a cover filled with an inert gas atmosphere. Here, the light used for the optical axis alignment can be guided to a sensor provided outside the cover. The cover may be provided with a window through which light used for optical axis alignment is transmitted.

An exposure apparatus according to the present invention includes a light source and an illumination optical system that irradiates a mask with exposure light using light from the light source. A cover that covers at least a part of the illumination optical system, the inside of which is filled with an inert gas, an optical element that branches light from the light source, and a light that is provided on the cover and is branched by the optical element. And a transmission window for leading to the outside of the cover. Here, one of the branched lights may be used for the exposure light, and the other may be used for optical axis alignment. The light source can emit visible light or infrared light at the same time as emitting light in the vacuum ultraviolet region. The wavelength in the vacuum ultraviolet region from the light source can be used as exposure light. Visible light or infrared light from the light source can be used for optical axis alignment. The light source may be an excimer laser. The excimer laser may be a F ₂ laser. The exposure light is 157.6299 nm and 157.5233 nm
Wherein at least one of the wavelength of the light used for the optical axis alignment can be a F ₂ laser comprising at least one of the wavelength of 741nm and 756 nm.

Further, the light from the light source can be split by the dichroic mirror. An actuator for driving the optical element may be provided. Detecting light used for the optical axis alignment, based on the detection result,
The actuator can be controlled. The actuator can control a tilt of the optical element. The actuator can drive the optical element in a tilt direction.

Further, in the exposure apparatus according to the present invention, the optical element may be arranged between the light source and a beam shaping optical system in an illumination optical system.
The light shaping optical system and the optical integrator in the illumination optical system, the optical integrator and the front lens group in the illumination optical system, and the front lens group in the illumination optical system collectively. It can be provided in at least one place between the rear groups of the optical lenses.

Further, a plurality of the optical elements and the actuators may be provided. The light branched by one of the plurality of optical elements is detected, and the one optical element can be driven based on the detection result. The driving of one optical element of the plurality of optical elements can be controlled based on a detection result of light split by another optical element. One of the split lights can be used for the exposure light, and the other can be used for light quantity detection.

Further, the present invention includes a step of installing a manufacturing apparatus group for various processes including the above-described exposure apparatus in a semiconductor manufacturing factory, and a step of manufacturing a semiconductor device by a plurality of processes using the manufacturing apparatus group. A method for manufacturing a semiconductor device, comprising: A step of connecting the group of manufacturing apparatuses via a local area network;
Data communication between the local area network and an external network outside the semiconductor manufacturing plant for information on at least one of the manufacturing apparatuses, provided by a vendor or user of the exposure apparatus. Access to the database via the external network to obtain the maintenance information of the manufacturing apparatus by data communication, or by performing data communication between the semiconductor manufacturing factory and another semiconductor manufacturing factory via the external network. Production management can be performed.

According to the present invention, a group of manufacturing apparatuses for various processes including the above-described exposure apparatus, a local area network connecting the group of manufacturing apparatuses, and an external network outside the factory can be accessed from the local area network. A semiconductor manufacturing factory having a gateway and capable of performing data communication of information on at least one of the manufacturing apparatus groups.

[0027] The present invention also relates to a method for maintaining an exposure apparatus installed in a semiconductor manufacturing plant, wherein a vendor or a user of the exposure apparatus provides a maintenance database connected to an external network of the semiconductor manufacturing factory. And allowing the access to the maintenance database from within the semiconductor manufacturing plant via the external network, and transmitting maintenance information stored in the maintenance database to the semiconductor manufacturing plant side via the external network. And a step of performing

According to the present invention, in the above exposure apparatus, a display, a network interface,
An exposure apparatus, further comprising: a computer that executes network software, and capable of performing data communication of maintenance information of the exposure apparatus via a computer network. Here, the network software provides a user interface on the display for accessing a maintenance database provided by a vendor or a user of the exposure apparatus connected to an external network of a factory where the exposure apparatus is installed, Information can be obtained from the database via the external network.

[0029]

Embodiments of the present invention will be described below with reference to the drawings. (Embodiment 1) FIG. 1 is a schematic configuration diagram of a step-and-scan type projection exposure apparatus according to an embodiment of the present invention. In FIG. 1, reference numeral 1 denotes a fluorine excimer laser
It has an oscillation wavelength near nm, and simultaneously 741 nm and 756
It has an oscillation wavelength near visible light or infrared light in nm. 2,
3, 4 are mirrors or dichroic mirrors, 5 is a blind (masking blade) for defining an illumination range, 6
And 7 are a front lens group and a rear lens group, respectively. Here, the dichroic mirror is a mirror having wavelength selectivity, and has a property of reflecting a predetermined wavelength and transmitting a predetermined wavelength. In FIG. 1,
Although the light source 1 is illustrated integrally with the illumination optical system, the laser light source 1 is actually provided separately from the exposure apparatus as described above.

In FIG. 1, the periphery of the wafer stage is sealed with a cover 13. The cover 13 is provided with a gas supply port and a gas discharge port (not shown). An inert gas such as nitrogen, helium, or argon is supplied into the cover 13 from the gas supply port, and the gas existing in the cover 13 is exhausted from the gas discharge port. Thereby, the cover 13
The inside is replaced with an inert gas to remove oxygen and moisture. Similarly, the periphery of the reticle and the inside of the projection optical system are also filled with an inert gas.

In FIG. 1, the illumination optical system for irradiating the reticle with exposure light is sealed by an illumination optical system cover 14. The illumination optical system cover 14 is provided with a gas supply port and a gas discharge port (not shown). An inert gas such as nitrogen, helium, or argon is supplied into the cover 14 from the gas supply port, and the gas existing in the cover 14 is exhausted from the gas discharge port. Thereby, the cover 1
4 is replaced with an inert gas to remove oxygen and moisture.

As described above, by replacing the atmosphere around the optical path with the inert gas, oxygen, water molecules and the like existing in the optical path are removed, and the attenuation of the exposure light is prevented.

In FIG. 1, a beam emitted from a fluorine excimer laser 1 is shaped into a predetermined beam shape through a beam shaping optical system 8, and thereafter, an optical integrator (a two-dimensional array of a plurality of minute lenses) is formed. Lens 9). Optical integrator 9
Form a secondary light source near its exit surface. A light beam from the secondary light source is collected by the front lens group 6. A masking blade 5 that regulates an illumination range is arranged near a plane that is orthogonal to the optical axis and that includes the light condensing point.
The light beam from the front lens group 6 is uniformly illuminated on the pattern surface of the mask 10 by the rear lens group 7. The pattern of the mask 10 is reduced and projected by a projection optical system 11 onto a wafer 12 coated with a photosensitive material. From the above,
The plane of the wafer 12 and the plane orthogonal to the optical axis including the pattern plane and the focal point of the mask 10 have a conjugate relationship.

The dichroic mirrors 2, 3, and 4
Divides a part of the visible light or the infrared light of the laser light, and arranges the photoelectric conversion surfaces of the sensors D1 to D3 in the vicinity of the converging point of the branched light. The outputs of the sensors D1 to D3 are subjected to data processing in the control devices C1 to C3, and detect the optical axis of the laser light, and control an actuator (not shown) that adjusts the inclination angles of the dichroic mirrors 2, 3, and 4.

Incidentally, one actuator (not shown) for adjusting the tilt angle of the dichroic mirrors 2, 3 and 4 may be provided for each mirror, or a plurality of actuators may be provided for each mirror to adjust the tilt of the mirror. Adjustments may be made. Since the actuator needs to drive the mirror in an atmosphere filled with an inert gas, it is desirable to drive and support the mirror in a non-contact manner. Therefore, the actuator
It is desirable that the non-contact drive mechanism be an electromagnetic drive mechanism such as a linear motor or a voice coil motor. As the non-contact bearing that supports the mirror so that it can tilt freely, a hydrostatic bearing is desirable, and as the working fluid, it is preferable to use the same inert gas as the atmosphere around the illumination optical system.

In the above description, three sets of sensors D1 to D3 and control devices C1 to C3 are provided, but any one or two sets of sensors and control devices may be used. in this case,
Reference numerals 2, 3, and 4 at locations where the sensors D1 to D3 are not provided are mirrors.

In the above description, the sensors D1 to D1
D3 corresponds to each of the control devices C1 to C3.
The output of the sensor D1 is subjected to data processing by the control device C1, detects the optical axis of the laser beam, and adjusts the tilt angle of the dichroic mirror 2. However, the present invention is not limited to the above-described correspondence, and the data output from any of the sensors D1 to D3 is processed by the other control devices C1 to C3, the optical axis of the laser beam is detected, and the other dichroic mirror 2, The inclination angles of 3 and 4 can also be adjusted. For example, the output of the sensor D1 is subjected to data processing by the control device C2 or C3, the optical axis of the laser beam is detected, and the tilt angle of the dichroic mirror 3 or 4 can be adjusted.

In this embodiment, the sensors D1 to D1
D3 is provided outside the illumination optical system cover 14. Accordingly, it is not necessary to provide the sensors D1 to D3 inside the illumination optical system, and it is easy to replace the interior of the illumination optical system cover 14 with an inert gas atmosphere.

In order to guide the dichroic mirrors 2 to 4 branched light to the sensors D1 to D3, the cover for the illumination optical system is provided with transmission windows 15 to 17. Branched by dichroic mirrors 2 to 4 and sensors D1 to D3
Is guided by visible light or infrared light, the transmission window provided in the illumination optical system cover may be made of quartz.
Further, since the light guided to the sensors D1 to D3 is visible light or infrared light, it is not necessary to control the atmosphere around the sensors D1 to D3 as in the illumination optical system cover. However, it goes without saying that the atmosphere around the sensors D1 to D3 may be controlled for reasons such as fluctuation prevention.

It is also effective to attach an optical filter, which cuts unnecessary wavelengths, to the surface of a sensor such as a photoelectric conversion element that converts visible light or infrared light to improve measurement accuracy.

If there is a correlation between the intensity of the wavelength in the vacuum ultraviolet region and the intensity of visible light or infrared light among the light from the light source, the sensors D1 to D3 are used as light amount sensors, and the dichroic mirror is used. The amount of exposure light may be measured by detecting visible light or infrared light branched by 2, 3, and 4.

(Embodiment 2) Another embodiment is shown in FIG. The same elements as those in FIG. 1 are given the same numbers and description thereof is omitted. In FIG. 2, a dichroic mirror 1
4 is an optical integrator (fly-eye lens)
9 and the condenser lens front group 6.

The dichroic mirror 14 branches a part of the visible light or the infrared light of the laser light, and arranges the photoelectric conversion surface of the sensor D4 near the condensing point of the branched light. The output of the sensor D4 is subjected to data processing in the control device C4, detects the optical axis of the laser beam, and controls an actuator (not shown) for adjusting the tilt angle of the dichroic mirror 3.

As described above, according to the first and second embodiments, in a projection exposure apparatus using a fluorine excimer laser as a light source, highly accurate optical axis alignment of a projection optical system becomes possible, and a fine circuit pattern Can be projected well.

Although the two embodiments have been described above, the present invention is not limited to the apparatus of the inert gas purge type shown in FIGS. Even if the active gas purge points are different, the effect is exhibited.

(Embodiment 3) FIG. 3 shows a conceptual diagram of an exposure apparatus of another embodiment for exposing a wafer to a circuit pattern image. In FIG. 3, the beam emitted from the excimer laser 1 is:
After being shaped into a predetermined beam shape via the beam shaping optical system 8, the light is incident on an optical integrator 9 in which a plurality of minute lenses are two-dimensionally arranged. The optical integrator 9 forms a secondary light source near its exit surface. The light beam from the secondary light source is collected by the first condenser lens 6. In the vicinity of a plane orthogonal to the optical axis including the converging point, a blind 5 for regulating an illumination range is arranged. The light beam from the first condenser lens 6 is
Thereby, the pattern surface of the mask 10 is uniformly illuminated. The pattern of the mask 10 is reduced and projected by a projection optical system 11 onto a wafer 12 coated with a photosensitive material.

A dichroic mirror is provided between the excimer laser 1 and the beam shaping optical system 8, between the beam shaping optical system 8 and the optical integrator 9, between the optical integrator 9 and the first condenser lens 6, and It is arranged in the condenser lens 7 or the like, branches a part of the visible light or the infrared light out of the laser light, and arranges the photoelectric conversion surfaces of the sensors D1 to D4 near the condensing point of the branched light. Outputs of the sensors D1 to D4 are subjected to data processing by a central control device (not shown) to detect an optical axis of the laser beam and control an actuator (not shown) for adjusting the inclination angle of the one or more dichroic mirrors. Note that the beam between the excimer laser 1 and the beam shaping optical system 8 is an original beam, and the beam between the beam shaping optical system 8 and the optical integrator 9 is an expanded beam, which may be appropriately selected depending on the accuracy of optical axis alignment. Can also.

(Example of Semiconductor Production System) Next, an example of a production system for semiconductor devices (semiconductor chips such as ICs and LSIs, liquid crystal panels, CCDs, thin-film magnetic heads, micromachines, etc.) will be described. This includes maintenance services such as troubleshooting and periodic maintenance of manufacturing equipment installed in semiconductor manufacturing plants, and software provision.
This is performed using a computer network outside the manufacturing factory.

FIG. 5 shows the entire system cut out from a certain angle. In the figure, reference numeral 101 denotes a vendor that supplies a semiconductor device manufacturing apparatus (apparatus supplier).
Is a business establishment. Examples of manufacturing equipment include semiconductor manufacturing equipment for various processes used in semiconductor manufacturing factories, for example, pre-processing equipment (lithography equipment such as exposure equipment, resist processing equipment, etching equipment, heat treatment equipment, film formation equipment, planarization). Equipment) and post-process equipment (assembly equipment, inspection equipment, etc.). A host management system 1 that provides a maintenance database for manufacturing equipment in the business office 101
08, a plurality of operation terminal computers 110, and a local area network (LAN) 109 connecting these to construct an intranet. Host management system 1
Reference numeral 08 includes a gateway for connecting the LAN 109 to the Internet 105, which is an external network of the business office, and a security function for restricting external access.

On the other hand, reference numerals 102 to 104 denote manufacturing factories of a semiconductor manufacturer as a user of the manufacturing apparatus. The manufacturing factories 102 to 104 may be factories belonging to different manufacturers or factories belonging to the same manufacturer (for example, a factory for a pre-process, a factory for a post-process, etc.). In each of the factories 102 to 104, a plurality of manufacturing apparatuses 106 and a local area network (LAN) 111 connecting them to construct an intranet are provided.
And a host management system 107 as a monitoring device for monitoring the operation status of each manufacturing apparatus 106. Host management system 1 provided in each factory 102 to 104
Reference numeral 07 includes a gateway for connecting the LAN 111 in each factory to the Internet 105 which is an external network of the factory. As a result, access to the host management system 108 on the vendor 101 side from the LAN 111 of each factory via the Internet 105 is possible, and only a limited user is permitted access by the security function of the host management system 108. Specifically, each manufacturing apparatus 1 is connected via the Internet 105.
In addition to notifying the vendor of the status information (for example, the symptom of the manufacturing apparatus in which the trouble has occurred) indicating the operation status of No. 06, the response information (for example,
(Information instructing how to cope with a trouble, software and data for coping), and maintenance information such as the latest software and help information can be received from the vendor side. For data communication between the factories 102 to 104 and the vendor 101 and data communication on the LAN 111 in each factory, a communication protocol (TCP / IP) generally used on the Internet is used. Instead of using the Internet as an external network outside the factory, it is also possible to use a dedicated line network (such as ISDN) that cannot be accessed by a third party and has high security. Further, the host management system is not limited to the one provided by the vendor, and a user may construct a database and place it on an external network, and permit access to the database from a plurality of factories of the user.

FIG. 6 is a conceptual diagram showing the entire system according to the present embodiment cut out from a different angle from FIG. In the above example, a plurality of user factories each having a manufacturing device and a management system of a vendor of the manufacturing device are connected via an external network, and the production management of each factory and at least one device are connected via the external network. The data of the manufacturing apparatus was communicated. In contrast, this example
A factory provided with manufacturing apparatuses of a plurality of vendors is connected to a management system of each vendor of the plurality of manufacturing apparatuses via an external network outside the factory, and data communication of maintenance information of each manufacturing apparatus is performed. In the figure, reference numeral 201 denotes a manufacturing factory of a manufacturing apparatus user (semiconductor device manufacturer), and a manufacturing apparatus for performing various processes is provided on a manufacturing line of the factory, for example, an exposure apparatus 202, a resist processing apparatus 203, and a film forming processing apparatus. 204 have been introduced. Although only one manufacturing factory 201 is illustrated in FIG. 7, a plurality of factories are actually networked similarly. Each device in the factory is connected by a LAN 206 to form an intranet, and the host management system 205 manages the operation of the production line. On the other hand, the exposure apparatus maker 210,
Resist processing equipment maker 220, deposition equipment maker 2
Each of the offices of vendors (equipment suppliers) such as No. 30 has host management systems 211, 221, and 231 for remote maintenance of the supplied equipment, and these include a maintenance database and an external network gateway as described above. Is provided. The host management system 205 that manages each device in the user's manufacturing factory, and the management systems 211, 221, and 231 of the vendors of each device are:
The external network 200 is connected via the Internet or a dedicated line network. In this system, if a trouble occurs in any of a series of manufacturing equipment in the manufacturing line, the operation of the manufacturing line is stopped, but remote maintenance is performed from the vendor of the troubled equipment via the Internet 200. As a result, quick response is possible, and downtime of the production line can be minimized.

Each manufacturing apparatus installed in the semiconductor manufacturing factory has a display, a network interface, and a computer for executing network access software and apparatus operation software stored in a storage device. The storage device is a built-in memory, a hard disk, a network file server, or the like. The network access software includes a dedicated or general-purpose web browser, and provides, for example, a user interface having a screen as shown in FIG. 7 on a display. The operator who manages the manufacturing equipment at each factory refers to the screen and refers to the manufacturing equipment model (401), serial number (402), trouble subject (403), date of occurrence (404), and urgency (40).
5), symptom (406), coping method (407), course (40)
8) Input information such as in the input items on the screen. The input information is transmitted to the maintenance database via the Internet, and the resulting appropriate maintenance information is returned from the maintenance database and presented on the display. Further, the user interface provided by the web browser further realizes a hyperlink function (410 to 412) as shown in the figure, so that the operator can access more detailed information of each item or use the software library provided by the vendor for the manufacturing apparatus. The latest version of software to be extracted can be extracted, and an operation guide (help information) can be extracted for reference by a factory operator. Here, the maintenance information provided by the maintenance database includes information on the features of the present invention described above, and the software library also provides the latest software for realizing the features of the present invention.

Next, a manufacturing process of a semiconductor device using the above-described production system will be described. FIG. 8 shows the flow of the whole semiconductor device manufacturing process. In step 1 (circuit design), the circuit of the semiconductor device is designed. Step 2 is a process for making a mask on the basis of the circuit pattern design. Step 3
In (wafer manufacture), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the prepared mask and wafer. The next step 5 (assembly) is called a post-process, and is a process of forming a semiconductor chip using the wafer produced in step 4, and assembly such as an assembly process (dicing and bonding) and a packaging process (chip encapsulation). Process. In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device manufactured in step 5 are performed. Through these steps, a semiconductor device is completed and shipped (step 7). The pre-process and the post-process are performed in separate dedicated factories, and maintenance is performed for each of these factories by the above-described remote maintenance system. Further, information for production management and apparatus maintenance is also communicated between the pre-process factory and the post-process factory via the Internet or a dedicated line network.

FIG. 9 shows a detailed flow of the wafer process. Step 11 (oxidation) oxidizes the wafer's surface. Step 12 (CVD) forms an insulating film on the wafer surface. Step 13 (electrode formation) forms electrodes on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. Step 15
In (resist processing), a photosensitive agent is applied to the wafer. Step 16 (exposure) uses the above-described exposure apparatus to print and expose the circuit pattern of the mask onto the wafer. Step 17 (development) develops the exposed wafer. In step 18 (etching), portions other than the developed resist image are removed. In step 19 (resist stripping), unnecessary resist after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer. Since the manufacturing equipment used in each process is maintained by the remote maintenance system described above, troubles can be prevented beforehand, and if troubles occur, quick recovery is possible. Productivity can be improved.

[0055]

As described above, according to the present invention,
In an exposure apparatus using a fluorine (F ₂ ) excimer laser as a light source, visible light or infrared light emitted simultaneously and coaxially with ultraviolet light is used for optical axis alignment, so that the optical axis alignment of the projection optical system can be performed with high accuracy. And a fine circuit pattern can be favorably projected.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram of a projection exposure apparatus according to an embodiment of the present invention.

FIG. 2 is a schematic configuration diagram of a projection exposure apparatus according to another embodiment of the present invention.

FIG. 3 is a schematic configuration diagram of a projection exposure apparatus according to another embodiment of the present invention.

FIG. 4 shows the wavelength and intensity of a fluorine (F ₂ ) excimer laser beam.

FIG. 5 is a conceptual view of a semiconductor device production system as viewed from a certain angle.

FIG. 6 is a conceptual diagram of a semiconductor device production system viewed from another angle.

FIG. 7 is a specific example of a user interface.

FIG. 8 is a diagram illustrating a flow of a device manufacturing process.

FIG. 9 is a diagram illustrating a wafer process.

[Explanation of symbols]

1: Fluorine (F ₂ ) excimer laser, ₂ , 3, 4, 1
4: mirror or dichroic mirror, 5: blind (masking blade), 6: condenser lens front group, 7:
8: beam shaping optical system, 9: optical integrator (fly-eye lens), 10: mask, 11: projection optical system, 12: wafer, 13: cover,
14: Cover for illumination optical system, 15, 16, 17: Transmission window.

Continued on the front page (72) Inventor Eiichi Murakami 3-30-2 Shimomaruko, Ota-ku, Tokyo F-term (reference) in Canon Inc. 2H097 AA03 BA10 BB10 CA13 EA01 GB00 LA10 5F046 AA22 AA28 BA04 CA03 CB07 CB23 DA13 FA03 FB02 FB08 FB19

Claims (45)

[Claims] An exposure apparatus for irradiating a pattern on a mask to a photosensitive substrate through a projection optical system using light from a light source, wherein the light source emits at least two wavelengths simultaneously, and the light from the light source An exposure apparatus, wherein a predetermined wavelength included in the light source is used as exposure light, and another wavelength from the light source is used for optical axis alignment. 2. The exposure apparatus according to claim 1, wherein the light source emits visible light or infrared light at the same time as emitting light in a vacuum ultraviolet region. 3. The exposure apparatus according to claim 1, wherein a wavelength in a vacuum ultraviolet region from the light source is used as exposure light. 4. The exposure apparatus according to claim 1, wherein visible light or infrared light from the light source is used for optical axis alignment. 5. The exposure apparatus according to claim 1, wherein the light source is an excimer laser. 6. An exposure apparatus according to claim 5, wherein said excimer laser is an F ₂ laser. 7. The exposure light includes at least one of wavelengths of 157.6299 nm and 157.5233 nm, and the light used for optical axis alignment includes 741 nm and 751 nm.
The exposure apparatus according to claim 1, wherein the exposure apparatus includes at least one of wavelengths of 6 nm. 8. The exposure apparatus according to claim 1, wherein the light from the light source is split by an optical element. 9. The exposure apparatus according to claim 8, wherein the dichroic mirror splits light from the light source into light used for exposure light and light used for optical axis alignment. 10. The exposure apparatus according to claim 8, further comprising an actuator for driving the optical element. 11. The exposure apparatus according to claim 10, wherein light used for the optical axis alignment is detected, and the actuator is controlled based on a detection result. 12. The apparatus according to claim 10, wherein the actuator controls an inclination of the optical element.
2. The exposure apparatus according to 1. 13. The apparatus according to claim 10, wherein the actuator drives the optical element in a tilt direction.
13. The exposure apparatus according to any one of 12. 14. An optical element for splitting light from said light source, said optical element being provided between said light source and a beam shaping optical system in an illumination optical system.
The beam shaping optical system and the optical integrator in the illumination optical system, the optical integrator and the front lens group in the illumination optical system, and the front lens group in the illumination optical system collectively. 2. The optical system according to claim 1, wherein the optical lens is provided at at least one position between the rear groups.
An exposure apparatus according to any one of 0 to 13. 15. The exposure apparatus according to claim 10, wherein a plurality of optical elements for splitting light from the light source and the plurality of actuators are provided. 16. A method comprising: detecting light branched by one of a plurality of optical elements for branching light from the light source; and driving the one optical element based on the detection result. The exposure apparatus according to claim 15, wherein 17. The driving of one of the plurality of optical elements that splits light from the light source is controlled based on a detection result of the light split by another optical element. The exposure apparatus according to claim 15, wherein 18. An illumination optical system for irradiating the mask with light from the light source, wherein at least a part of the illumination optical system is disposed inside a cover filled with an inert gas atmosphere. An exposure apparatus according to claim 1. 19. The exposure apparatus according to claim 18, wherein the light used for the optical axis alignment is guided to a sensor provided outside the cover. 20. The exposure apparatus according to claim 18, wherein the cover is provided with a window through which light used for optical axis alignment is transmitted. 21. An exposure apparatus, comprising: a light source; and an illumination optical system for irradiating a mask with exposure light using light from the light source, wherein the exposure apparatus irradiates a pattern of the mask onto a photosensitive substrate. A cover that partially covers the inside and is filled with an inert gas; an optical element that branches light from the light source; and an optical element that is provided on the cover and guides the light that is branched by the optical element to outside the cover. An exposure apparatus having a transmission window. 22. The exposure apparatus according to claim 21, wherein one of the split lights is used for the exposure light, and the other is used for optical axis alignment. 23. The exposure apparatus according to claim 21, wherein the light source emits visible light or infrared light at the same time as emitting light in a vacuum ultraviolet region. 24. The apparatus according to claim 21, wherein a wavelength in a vacuum ultraviolet region from said light source is used as exposure light.
3. The exposure apparatus according to claim 1. 25. The method according to claim 21, wherein visible light or infrared light from the light source is used for optical axis alignment.
4. The exposure apparatus according to any one of 4). 26. The exposure apparatus according to claim 21, wherein the light source is an excimer laser. 27. The exposure apparatus according to claim 26, wherein the excimer laser is an F ₂ laser. 28. The exposure light has a wavelength of 157.6299 nm.
And at least one of the wavelengths of 157.5233 nm, and the light used for optical axis alignment is 741 nm and 75
The exposure apparatus according to any one of claims 21 to 27, wherein the exposure apparatus includes at least one of wavelengths of 6 nm. 29. A light source according to claim 21, wherein the light from the light source is split by a dichroic mirror.
The exposure apparatus according to any one of the above. 30. The exposure apparatus according to claim 21, further comprising an actuator for driving the optical element. 31. The exposure apparatus according to claim 30, wherein light used for the optical axis alignment is detected, and the actuator is controlled based on a detection result. 32. The actuator according to claim 30, wherein the actuator controls an inclination of the optical element.
2. The exposure apparatus according to 1. 33. The actuator according to claim 30, wherein the actuator drives the optical element in a tilt direction.
32. The exposure apparatus according to any one of 32. 34. The optical element is provided between the light source and a beam shaping optical system in an illumination optical system, between the beam shaping optical system in the illumination optical system and an optical integrator, and in the optical system in the illumination optical system. 31. The light-emitting device according to claim 30, wherein the light-emitting device is provided at at least one of a position between the integrator and the front lens group and between the front lens group and the rear lens group in the illumination optical system. 33. The exposure apparatus according to any one of 33. 35. The exposure apparatus according to claim 30, wherein a plurality of the optical elements and the plurality of actuators are provided. 36. The method according to claim 35, wherein light branched by one optical element of the plurality of optical elements is detected, and the one optical element is driven based on the detection result. Exposure apparatus according to the above. 37. The method according to claim 3, wherein driving of one of the plurality of optical elements is controlled based on a detection result of light split by another optical element.
6. The exposure apparatus according to 5. 38. The exposure apparatus according to claim 21, wherein one of the split lights is used for the exposure light, and the other is used for light quantity detection. 39. A step of installing a group of manufacturing apparatuses for various processes including the exposure apparatus according to claim 1 in a semiconductor manufacturing factory, and a semiconductor device by a plurality of processes using the group of manufacturing apparatuses. Manufacturing a semiconductor device. 40. A step of connecting the manufacturing equipment group by a local area network, and data communication of information on at least one of the manufacturing equipment group between the local area network and an external network outside the semiconductor manufacturing factory. 40. The method of claim 39, further comprising the step of: 41. A semiconductor manufacturing plant different from the semiconductor manufacturing plant by accessing a database provided by a vendor or a user of the exposure apparatus via the external network to obtain maintenance information of the manufacturing device by data communication. 40. The method according to claim 39, wherein the production management is performed by data communication with the external network via the external network. 42. A manufacturing apparatus group for various processes including the exposure apparatus according to any one of claims 1 to 38, a local area network connecting the manufacturing apparatus group, and an external device outside the factory from the local area network. A semiconductor manufacturing plant having a gateway that enables access to a network and capable of performing data communication of information on at least one of the manufacturing apparatus groups. 43. The semiconductor device according to claim 1, which is installed in a semiconductor manufacturing plant.
39. A method for maintaining an exposure apparatus according to any one of -38, wherein a vendor or a user of the exposure apparatus provides a maintenance database connected to an external network of the semiconductor manufacturing plant; A step of permitting access to the maintenance database via the external network, and a step of transmitting maintenance information stored in the maintenance database to a semiconductor manufacturing factory via the external network. How to maintain the exposure equipment. 44. The exposure apparatus according to claim 1, further comprising a display, a network interface, and a computer that executes network software, and stores maintenance information of the exposure apparatus via a computer network. Exposure equipment that enables data communication. 45. The network software,
Provided on the display is a user interface for accessing a maintenance database provided by a vendor or a user of the exposure apparatus connected to an external network of a factory where the exposure apparatus is installed, and from the database via the external network. 45. The device according to claim 44, which makes it possible to obtain information.