JP2003133539A5 - - Google Patents
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- Publication number
- JP2003133539A5 JP2003133539A5 JP2002187056A JP2002187056A JP2003133539A5 JP 2003133539 A5 JP2003133539 A5 JP 2003133539A5 JP 2002187056 A JP2002187056 A JP 2002187056A JP 2002187056 A JP2002187056 A JP 2002187056A JP 2003133539 A5 JP2003133539 A5 JP 2003133539A5
- Authority
- JP
- Japan
- Prior art keywords
- integrated device
- integrated
- laser
- substrate
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims 5
- 230000003287 optical effect Effects 0.000 claims 4
- 239000004065 semiconductor Substances 0.000 claims 4
- 238000012806 monitoring device Methods 0.000 claims 3
- 230000005540 biological transmission Effects 0.000 claims 2
- 238000002161 passivation Methods 0.000 claims 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/894717 | 2001-06-28 | ||
| US09/894,717 US7012943B2 (en) | 2001-06-28 | 2001-06-28 | Integration of amorphorous silicon transmit and receive structures with GaAs or InP processed devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003133539A JP2003133539A (ja) | 2003-05-09 |
| JP2003133539A5 true JP2003133539A5 (https=) | 2005-09-29 |
Family
ID=25403445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002187056A Pending JP2003133539A (ja) | 2001-06-28 | 2002-06-27 | アモルファスシリコン送信及び受信構造とＧａＡｓまたはＩｎＰ加工済み装置との集積化 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7012943B2 (https=) |
| EP (1) | EP1284531B1 (https=) |
| JP (1) | JP2003133539A (https=) |
| DE (1) | DE60210168T2 (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7831151B2 (en) * | 2001-06-29 | 2010-11-09 | John Trezza | Redundant optical device array |
| US7289547B2 (en) * | 2003-10-29 | 2007-10-30 | Cubic Wafer, Inc. | Laser and detector device |
| WO2005066946A1 (en) * | 2003-12-24 | 2005-07-21 | Koninklijke Philips Electronics N.V. | Improved optical read-out. |
| JP3729270B2 (ja) | 2004-01-08 | 2005-12-21 | セイコーエプソン株式会社 | 光素子およびその製造方法 |
| US7526009B2 (en) * | 2005-05-07 | 2009-04-28 | Samsung Electronics Co., Ltd. | End-pumped vertical external cavity surface emitting laser |
| JP2010177649A (ja) * | 2009-02-02 | 2010-08-12 | Sony Corp | 半導体発光装置 |
| EP3588700A1 (en) * | 2018-06-26 | 2020-01-01 | Koninklijke Philips N.V. | Vcsel device for an smi sensor for recording three-dimensional pictures |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0513021Y2 (https=) * | 1986-02-20 | 1993-04-06 | ||
| JPH01109764A (ja) * | 1987-10-22 | 1989-04-26 | Nec Corp | 光電子集積回路 |
| US5038356A (en) | 1989-12-04 | 1991-08-06 | Trw Inc. | Vertical-cavity surface-emitting diode laser |
| US5355096A (en) | 1993-07-06 | 1994-10-11 | Trw Inc. | Compace HBT wide band microwave variable gain active feedback amplifier |
| US5398004A (en) | 1994-02-09 | 1995-03-14 | Trw Inc. | HBT direct-coupled low noise wideband microwave amplifier |
| US5389896A (en) | 1994-02-24 | 1995-02-14 | Trw Inc. | HBT monolithic variable gain amplifier with bias compensation and buffering |
| FR2725098B1 (fr) | 1994-09-27 | 1996-11-22 | Alcatel Telspace | Dispositif de synchronisation de branches d'un decodeur de viterbi compris dans un recepteur de donnees numeriques codees en treillis multidimensionnel |
| US5550520A (en) | 1995-04-11 | 1996-08-27 | Trw Inc. | Monolithic HBT active tuneable band-pass filter |
| US5710523A (en) | 1996-01-16 | 1998-01-20 | Trw Inc. | Low noise-low distortion hemt low noise amplifier (LNA) with monolithic tunable HBT active feedback |
| US5838031A (en) | 1996-03-05 | 1998-11-17 | Trw Inc. | Low noise-high linearity HEMT-HBT composite |
| US5719893A (en) * | 1996-07-17 | 1998-02-17 | Motorola, Inc. | Passivated vertical cavity surface emitting laser |
| US5757837A (en) * | 1996-10-16 | 1998-05-26 | The Regents Of The University Of California | Intracavity quantum well photodetector integrated within a vertical-cavity surface-emitting laser and method of operating same |
| US5877519A (en) * | 1997-03-26 | 1999-03-02 | Picolight Incoporated | Extended wavelength opto-electronic devices |
| US6023485A (en) | 1998-02-17 | 2000-02-08 | Motorola, Inc. | Vertical cavity surface emitting laser array with integrated photodetector |
| DE19807783A1 (de) | 1998-02-18 | 1999-09-02 | Siemens Ag | Bauelement mit einem Lichtsender und einem Lichtempfänger |
| JPH11330609A (ja) | 1998-03-11 | 1999-11-30 | Seiko Epson Corp | モニタ付き面発光レーザおよびその製造方法 |
| US6097748A (en) * | 1998-05-18 | 2000-08-01 | Motorola, Inc. | Vertical cavity surface emitting laser semiconductor chip with integrated drivers and photodetectors and method of fabrication |
| US6483862B1 (en) * | 1998-12-11 | 2002-11-19 | Agilent Technologies, Inc. | System and method for the monolithic integration of a light emitting device and a photodetector using a native oxide semiconductor layer |
| US6670599B2 (en) * | 2000-03-27 | 2003-12-30 | Aegis Semiconductor, Inc. | Semitransparent optical detector on a flexible substrate and method of making |
| JP2002100829A (ja) * | 2000-09-26 | 2002-04-05 | Canon Inc | 半導体発光受光装置、およびその作製方法 |
-
2001
- 2001-06-28 US US09/894,717 patent/US7012943B2/en not_active Expired - Lifetime
-
2002
- 2002-06-24 EP EP02014126A patent/EP1284531B1/en not_active Expired - Lifetime
- 2002-06-24 DE DE60210168T patent/DE60210168T2/de not_active Expired - Lifetime
- 2002-06-27 JP JP2002187056A patent/JP2003133539A/ja active Pending
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