JP2003133238A - Process chamber of equipment for film deposition and equipment and method for film deposition - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a process chamber of equipment for film deposition where the film thickness distribution of a substrate can be effectively adjusted, and to provide the equipment and method for film deposition. SOLUTION: A rotatable susceptor for supporting a wafer W is disposed in the process chamber of epitaxial growth equipment. A distributor 6 is disposed at the side of the process chamber. This distributor 6 is provided with a plurality of introducing holes 7 for introducing film deposition gas into the chamber. In such a distributor 6, the number of blocked introducing holes 7 at the right side region R corresponding to the side where the film deposition gas flows against the revolution of the susceptor is made smaller than that of blocked introducing holes 7 at the left side region L corresponding to the side where the film deposition gas flows along the revolution of the susceptor. In other words, the total opening area of the introducing holes 7 at the right side region R of the distributor 6 is larger than that of the introducing holes 7 at the left side region L of the distributor 6.

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a process chamber of a film forming apparatus for forming a thin film on a surface of a substrate, a film forming apparatus and a film forming method.

[0002]

2. Description of the Related Art An epitaxial growth apparatus, which is one of film forming apparatuses, includes, for example, a process chamber, a susceptor arranged in the process chamber for supporting a semiconductor wafer, and a rotating mechanism for rotating the susceptor.
A plurality of heating lamps disposed above and below the process chamber for heating the wafer supported by the susceptor. In such an epitaxial growth apparatus, when a film-forming gas is supplied into the process chamber from a gas inlet provided on the side of the process chamber, the film-forming gas flows along the surface of the wafer in a laminar flow state, and A thin film is formed on.

[0003]

In the development of next-generation semiconductor devices, it is necessary to improve the uniformity of the film thickness distribution of the thin film formed on the surface of the wafer. For this reason, it is desirable to adjust the film thickness distribution of the wafer in a wide range, but it is difficult to adjust such a film thickness distribution in the conventional film forming apparatus.

An object of the present invention is to provide a film forming apparatus process chamber, a film forming apparatus and a film forming method capable of effectively adjusting the film thickness distribution of a substrate.

[0005]

The present invention relates to a process chamber of a film forming apparatus for supplying a film forming gas toward a substrate while rotating a supporting member supporting the substrate to form a film on the substrate. A chamber main body for accommodating the support member and a rectifying plate provided on a side portion of the chamber main body and having a plurality of introduction holes for introducing the film forming gas into the chamber main body. Of the introduction holes provided in the first region corresponding to the side where the gas flows counter to the rotation of the support member corresponds to the side where the film forming gas flows so as to follow the rotation of the support member. It is characterized in that it is larger than the total opening area of the introduction holes provided in the region.

In the film forming apparatus having the process chamber of the present invention, the film is formed in the chamber body through the plurality of introduction holes formed in the current plate while the support member supporting the substrate is rotated. A thin film is formed on the surface of the substrate by introducing the gas. At this time, due to the rotation of the substrate, the distribution of the flow rate of the film-forming gas flowing on the substrate per unit time becomes non-uniform. Specifically, on the side where the film forming gas flows counter to the rotation of the supporting member, the film forming gas passes per unit time compared to the side where the film forming gas flows along with the rotation of the supporting member. Increased flow rate. Therefore, by making the total opening area of the introduction holes in the first region of the rectifying plate larger than the total opening area of the introduction holes in the second region of the rectifying plate, the deposition gas is supplied to the supporting member during the supply of the deposition gas. Compared with the flow rate to the side that flows along with the rotation, the flow rate to the side where the film forming gas flows against the rotation of the support member increases, so that the thin film can be efficiently formed on the substrate. become. This makes it possible to effectively adjust the film thickness distribution of the thin film formed on the substrate by changing, for example, the position of the introduction hole in the first region of the current plate.

Preferably, the plurality of introduction holes have the same opening area, and the number of opened introduction holes in the first region of the straightening vane is the same as the number of open introduction holes in the second region of the straightening vane. The configuration is more than the quantity. Accordingly, the total opening area of the introduction holes provided in the first region of the straightening vane can be surely made larger than the total opening area of the introduction holes provided in the second region of the straightening vane.

In this case, preferably, a closing member for closing the introduction hole is further provided, and the number of the introduction holes closed by the closing member in the first region is changed to the introduction hole closed by the closing member in the second region. The configuration is less than the number of holes.
In this case, the positions and the number of the introduction holes to be closed by the closing member can be arbitrarily changed according to the structure of the process chamber, the film forming conditions, etc., so that it is not necessary to prepare a plurality of types of current plates. Therefore, it is advantageous in terms of cost.

In this case, preferably, the closing member is formed by a bolt inserted into the introduction hole and a nut used for tightening the bolt. As a result, the closing member can be realized with a simple structure and the introduction hole can be surely closed.

Also preferably, the closure member is made of polytetrafluoroethylene. This makes the blocking member less likely to corrode.

Further, preferably, a plurality of partition plates provided so as to extend from the current plate toward the support member side is further provided. In this case, the film forming gas introduced through the plurality of introducing holes flows toward the substrate while being guided by the partition plate, so that the spread of the film forming gas can be reduced.

The present invention also includes a process chamber,
The substrate is provided with a support member disposed in the process chamber for supporting the substrate, and a driving unit for rotationally driving the support member, and the film forming gas is supplied toward the substrate while the support member supporting the substrate is rotated. A film forming apparatus for forming a film,
The process chamber has a chamber body that accommodates a support member, and a rectifying plate that is provided on a side portion of the chamber body and has a plurality of introduction holes for introducing a film forming gas into the chamber body. A first side corresponding to a side where the film-forming gas flows counter to the rotation of the support member
The total opening area of the introduction holes provided in the region is larger than the total opening area of the introduction holes provided in the second region corresponding to the side where the film forming gas flows along with the rotation of the support member. To do.

In such a film forming apparatus of the present invention,
By making the total opening area of the introduction holes in the first region of the rectifying plate larger than the total opening area of the introduction holes in the second region of the rectifying plate, the film forming gas causes the support member to rotate when the film forming gas is supplied. The supply flow rate of the film forming gas to the side that flows counter to the rotation of the support member is larger than the supply flow rate to the side that flows along with it, and the thin film is efficiently formed on the substrate. . This makes it possible to effectively adjust the film thickness distribution of the thin film formed on the substrate by changing, for example, the position of the introduction hole in the first region of the current plate.

Preferably, it further comprises a heating means arranged outside the process chamber for heating the substrate supported by the supporting member. In this case, the present invention can be applied to an epitaxial growth apparatus.

Further, the present invention is a film forming method for forming a film on a substrate by supplying a film forming gas toward the substrate while rotating a supporting member supporting the substrate. When supplying the gas, the flow rate of the film forming gas supplied to the side where the film forming gas flows against the rotation of the substrate is supplied to the side where the film forming gas flows to follow the rotation of the support member. It is characterized in that the flow rate is higher than the flow rate of the film gas.

Thus, for example, the film thickness distribution of the thin film formed on the substrate is adjusted by changing the position where the film forming gas is supplied on the side where the film forming gas flows against the rotation of the support member. Can be done effectively.

[0017]

BEST MODE FOR CARRYING OUT THE INVENTION Preferred embodiments of a process chamber of a film forming apparatus, a film forming apparatus and a film forming method according to the present invention will be described below with reference to the drawings.

1 and 2 schematically show an embodiment of a single-wafer type epitaxial growth apparatus as a film forming apparatus according to the present invention. In these figures, the epitaxial growth apparatus 1 includes a process chamber 2 made of, for example, quartz glass. The process chamber 2 has a chamber body 3, and the chamber body 3
A susceptor 4 for horizontally supporting the wafer W is housed therein.

The susceptor 4 is made of, for example, silicon carbide (Si
It is formed of a carbon graphite material coated with C). Further, the susceptor 4 is horizontally supported at three points from the back surface side by a support shaft 5 made of quartz glass which is provided upright in the lower portion of the process chamber 2. The support shaft 5 is rotationally driven by a drive motor (not shown), which allows the susceptor 4 to rotate at a constant rotational speed.

A rectifying plate 6 is arranged on the side of the chamber body 3. As shown in FIG. 3, the current plate 6 includes
A plurality of circular introduction holes 7 for introducing the film forming gas into the chamber body 3 are formed. These introduction holes 7
Have the same opening area. In addition, the introduction hole 7
Are a plurality of (in this case, 14) introducing holes 7a for supplying the film forming gas mainly toward the central portion of the wafer W, and are formed outside these introducing holes 7a, and are mainly on the edge side of the wafer W. To supply the film-forming gas toward the
Individual) introduction holes 7b.

FIG. 4 shows a closing member 8 for closing the introduction hole 7. The closing member 8 is composed of a bolt 9 inserted into the introduction hole 7 and a nut 10 used for tightening the bolt 9. As these bolts 9 and nuts 10, those made of polytetrafluoroethylene (trade name: Teflon) having corrosion resistance are preferably used. By closing any of the introduction holes 7 using such a closing member 8, the number and position of the introduction holes 7 to be used can be arbitrarily changed from all the introduction holes 7.

Returning to FIG. 1 and FIG. 2, the process chamber 2 has four partition plates 11 extending from the flow straightening plate 6 toward the susceptor 4 side in parallel with each other. It is divided into an inner region Si through which the film forming gas introduced through the hole 7a passes and an outer region So through which the film forming gas introduced through the introduction hole 7b passes. By providing the partition plate 11 as described above, the film forming gas introduced from the plurality of introduction holes 7 of the flow straightening plate 6 moves toward the susceptor 4 while being guided by the partition plate 11, so that the susceptor 4 has The spread of the film forming gas is reduced.

Further, the current plate 6 in the chamber body 3
An exhaust port 12 is provided at a portion opposite to the exhaust port 12.
Exhausted from.

Above and below the process chamber 2, heating lamps 13 for heating the wafer W placed on the susceptor 4 are radially arranged. Around the susceptor 4 in the chamber body 3, a preheating ring 14 for heating the film-forming gas introduced from the plurality of introduction holes 7 of the straightening plate 6 is arranged.

In the epitaxial growth apparatus 1 configured as described above, when the wafer W is deposited, the wafer W is first loaded into the process chamber 2 by a transfer robot (not shown) and placed on the susceptor 4. Then, the heating lamp 13 is turned on to heat the wafer W to the processing temperature. Then, with the susceptor 4 rotated, trichlorosilane (SiHCl ₃ ) gas or dichlorosilane (Si
A film forming gas such as H ₂ Cl ₂ ) gas is supplied into the process chamber 2 through the plurality of introduction holes 7 of the straightening plate 6. Then, the film forming gas flows in a laminar state along the surface of the wafer W,
A thin film is formed on the surface of the wafer W.

At this time, as shown in FIG. 5, the side where the film forming gas flows counter to the rotation of the susceptor 4 (see FIG. 2).
Then, in the right side region R of the straightening plate 6 corresponding to the right side when viewed from the flow direction of the film forming gas, the introduction hole 7 closed by the closing member 8 is formed.
The side where the film forming gas flows along with the rotation of the susceptor 4 (the left side when viewed from the direction of the film forming gas in FIG. 2).
In the left side region L of the rectifying plate 6 corresponding to, the number of the introduction holes 7 closed by the closing member 8 is made smaller. That is, the number of open introduction holes 7 existing in the right region R of the straightening plate 6 is
The total opening area of the introduction holes 7 in the right side region R of the straightening vane 6 is set to be larger than the number of the opening holes 7 present in the left side region L of the straightening vane 6 so that the total opening area of the introduction holes 7 becomes larger.
Is larger than the total opening area of the introduction hole 7 in. The reason why the numbers of the introduction holes 7 opened are different between the right side region R and the left side region L of the current plate 6 is as follows.

That is, since the wafer W rotates during film formation, the distribution of the flow rate of the film forming gas (relative flow velocity of the film forming gas) flowing on the wafer W is not uniform. That is, the wafer W in which the film forming gas flows counter to the rotation of the susceptor 4.
Of the film-forming gas passing through an arbitrary point on the right side of the wafer W is larger than the flow rate of the film-forming gas passing through the corresponding point on the left side of the wafer W, which flows along with the rotation of the susceptor 4. Become. Therefore, when the flow rate of the film forming gas supplied to the right side of the wafer W is higher than the flow rate of the film forming gas supplied to the left side of the wafer W, a thin film is efficiently formed on the wafer W. Therefore, adjusting the position and number of the opening introduction holes 7 in the right side region R of the flow straightening plate 6 rather than adjusting in the left side region L of the flow straightening plate 6, the change in the film thickness of the thin film is more remarkable. It is thought that the distribution adjustment range will be expanded.

Therefore, as described above, the total opening area of the introduction holes 7 in the right side region R of the straightening vane 6 is made larger than the total opening area of the introduction holes 7 in the left side region L of the straightening vane 6 to form a film. When supplying the gas, the flow rate of the film forming gas supplied to the right side of the wafer W is made higher than the flow rate of the film forming gas supplied to the left side of the wafer W. Then, by changing the position of the introduction hole 7 opening in the right side region R of the straightening plate 6,
The position where the film forming gas is supplied in the right side region R is changed, or the total opening area of the introduction holes 7 in the right side region R of the straightening plate 6 is larger than the total opening area of the introduction holes 7 in the left side region L. While keeping the same, the number of the introduction holes 7 opened in the right side region R of the rectifying plate 6 is changed to change the flow rate of the film forming gas supplied to the right side region R. This makes it possible to effectively adjust the film thickness distribution of the thin film formed on the wafer W.

When actually adjusting the position and the number of the introduction holes 7 to be opened, the introduction holes 7 to be opened are determined according to the structure of the process chamber, the film forming conditions, etc., and are formed on the surface of the wafer W. The thickness distribution of the thin film should be as uniform as possible.

FIG. 6A shows a standard straightening plate 16, and FIG. 6B shows the above straightening plate 6. In addition, in FIG. 6B, the black circle indicates the closing member 8.
The open holes 7 are closed, and the open circles show the open open holes 7. As can be seen from the figure, since the rectifying plate 6 has a larger number of introducing holes 7 than the rectifying plate 16, the film thickness distribution of the thin film of the wafer W can be effectively controlled by using the closing member 8.

FIG. 7 shows an example of the film thickness distribution of the thin film formed on the surface of the wafer W when the rectifying plate shown in FIG. 6 is used. The horizontal axis of FIG. 7 indicates the wafer W.
Of the thin film, and the vertical axis in FIG. 7 represents the film thickness of the thin film. The rotation direction of the susceptor 4 (wafer W) at this time is clockwise as shown in FIG.

In FIG. 7, P shows the film thickness distribution when the straightening plate 16 shown in FIG. 6A is used, and Q shows FIG.
The film thickness distribution when the rectifying plate 6 shown in (b) is used is shown. Here, the film thickness uniformity when using the current plate 16 shown in FIG. 6A is ± 1.37%. On the other hand, when the rectifying plate 6 shown in FIG. 6B is used, the film thickness uniformity is ± 0.75%, which shows that the film thickness uniformity of the thin film formed on the wafer W is improved. .

FIG. 8 (a) shows a straightening plate 16 similar to that shown in FIG. 6 (a), and FIG. 8 (b) shows a straightening plate in which the introduction hole 7 opened in FIG. 6 (b) is changed. The plate 6 is shown. Note that FIG. 8 shows a state as viewed from the direction in which the film forming gas flows. In FIG. 8B, the number of the introduction holes 7 opened in the right half as viewed from the flow direction of the film forming gas is larger than the number of the introduction holes 7 opened in the left half.

FIG. 9 shows an example of the film thickness distribution of the thin film formed on the surface of the wafer W when the rectifying plate shown in FIG. 8 is used. The horizontal axis and the vertical axis of FIG.
It is similar to FIG. The rotation direction of the wafer W at this time is clockwise.

In FIG. 9, R shows the film thickness distribution when the straightening plate 16 shown in FIG. 8A is used, and S shows FIG.
The film thickness distribution when the rectifying plate 6 shown in (b) is used is shown. Here, the film thickness uniformity when the rectifying plate shown in FIG. 8A is used is ± 1.37%. On the other hand, FIG.
The film thickness uniformity when using the straightening plate shown in (b) is ±
This is 0.31%, and the film thickness uniformity of the thin film formed on the wafer W is further improved as compared with the case where the number and positions of the opening introduction holes 7 are set as shown in FIG. 6B. I can see it.

As described above, in the present embodiment, the total opening area of the introduction hole 7 in the right side region R of the straightening plate 6 corresponding to the side where the film forming gas flows counter to the rotation of the susceptor 4 is determined. Since the film forming gas is made larger than the total opening area of the introduction holes 7 in the left side region L of the straightening vane 6 corresponding to the side where the film forming gas flows along with the rotation of the susceptor 4, the introduction opening in the right side region R of the straightening vane 6 is introduced. By changing the number and position of the holes 7, the thickness distribution of the thin film formed on the wafer W can be effectively adjusted. As a result, the film thickness uniformity of the wafer W can be improved.

Further, since a plurality of introducing holes 7 are formed in the current plate 6 and any of the introducing holes 7 is closed by the closing member 8, the structure of the process chamber and the film forming conditions. It eliminates the need to use different types of rectifying plates depending on the situation. Therefore, there is no need to manufacture a plurality of types of flow straightening plates, which is advantageous in terms of cost.

The present invention is not limited to the above embodiment. For example, in the above-described embodiment, the straightening vanes 6 having the plurality of introducing holes 7 are used, and by closing the arbitrary introducing holes 7 with the closing member 8, the introducing holes are formed in the right side region R and the left side region L of the straightening vanes 6. Although the total opening area of 7 is changed, the current plate is not particularly limited to such a type. For example, the total opening area of the introduction holes in the region corresponding to the side where the film forming gas flows against the rotation of the susceptor 4 is in the region corresponding to the side where the film forming gas flows so as to follow the rotation of the susceptor 4. A slit-shaped introduction hole may be provided in the current plate so as to be larger than the total opening area of the introduction hole.

Further, although the film forming apparatus of the above embodiment is an epitaxial growth apparatus, the present invention is not limited to another film forming apparatus as long as it has a process chamber in which a rectifying plate is arranged on the side of the chamber body. Can also be applied to.

[0040]

According to the present invention, in the current plate having a plurality of introduction holes, the introduction holes provided in the first region corresponding to the side where the film-forming gas flows so as to oppose the rotation of the support member. Since the total opening area is made larger than the total opening area of the introduction holes provided in the second region corresponding to the side where the film forming gas flows along with the rotation of the supporting member, the film thickness of the thin film formed on the substrate The distribution can be adjusted effectively. This makes it possible to improve the film thickness uniformity of the substrate.

Further, according to the present invention, in the film forming process of the substrate, when the film forming gas is supplied toward the substrate,
The flow rate of the film forming gas supplied to the side where the film forming gas flows counter to the rotation of the substrate is greater than the flow rate of the film forming gas supplied to the side where the film forming gas flows so as to follow the rotation of the supporting member. Since the number is increased, the thickness distribution of the thin film formed on the substrate can be effectively adjusted. This makes it possible to improve the film thickness uniformity of the substrate.

[Brief description of drawings]

FIG. 1 is a sectional view schematically showing an embodiment of a single-wafer type epitaxial growth apparatus as a film forming apparatus according to the present invention.

FIG. 2 is a sectional view taken along line II-II of FIG.

FIG. 3 is a front view of the current plate shown in FIG.

FIG. 4 is a view showing a closing member that closes an introduction hole of the current plate shown in FIG.

5 is a view showing an example of a current plate in which an arbitrary introduction hole is closed by the closing member shown in FIG.

6 is a diagram showing a standard straightening vane and a state in which an arbitrary introduction hole is closed in the straightening vane shown in FIG.

7 is a diagram showing an example of a film thickness distribution of a thin film formed on the surface of a wafer when the film is formed on the wafer using the rectifying plate shown in FIG.

FIG. 8 is a diagram showing a standard straightening vane and a state in which an arbitrary introduction hole is closed in the straightening vane shown in FIG.

9 is a diagram showing an example of a film thickness distribution of a thin film formed on the surface of a wafer when the film is formed on the wafer using the rectifying plate shown in FIG.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Epitaxial growth apparatus (film-forming apparatus), 2 ... Process chamber, 3 ... Chamber body, 4 ... Susceptor (support member), 5 ... Support shaft (driving means), 6 ... Rectifier plate, 7 ... Introducing hole, 8 ... Closure Member, 9 ... Bolt, 10 ... Nut, 11 ... Partition plate, 13 ... Heating lamp (heating means),
R ... right side region (first region), L ... left side region (second region), W ... wafer (substrate).

Continued front page    (72) Inventor Ryuichi Nakamura             14-3 Shinizumi, Narita City, Chiba Prefecture Nogedaira Industrial Park               Applied Materials Japan Co., Ltd.             Inside the company (72) Inventor Yoji Takagi             14-3 Shinizumi, Narita City, Chiba Prefecture Nogedaira Industrial Park               Applied Materials Japan Co., Ltd.             Inside the company F-term (reference) 4K030 AA06 BA29 CA04 CA12 EA05                       EA06 FA10 GA06 JA04 JA05                       KA46                 5F045 BB02 DP04 DP28 EE20 EF13                       EK11 EM10

Claims (9)

[Claims] 1. A process chamber of a film forming apparatus for supplying a film forming gas to the substrate while rotating the supporting member supporting the substrate to form a film on the substrate, the housing containing the supporting member. And a flow straightening plate provided on a side portion of the chamber main body, the flow straightening plate having a plurality of introduction holes for introducing the film forming gas into the chamber main body. Of the introduction hole provided in the first region corresponding to the side that flows counter to the rotation of the support member is such that the film forming gas flows on the side that flows along with the rotation of the support member. A process chamber of a film forming apparatus that is larger than the total opening area of the introduction holes provided in the corresponding second region. 2. The plurality of introduction holes have the same opening area, and the number of opened introduction holes existing in the first region of the straightening vane is present in the second region of the straightening vane. The process chamber of the film forming apparatus according to claim 1, wherein the number of the introduced holes is larger than the number of the introduced holes. 3. A closing member for closing the introduction hole is further provided, and the number of the introduction holes closed by the closing member in the first region is closed by the closing member in the second region. The process chamber of the film forming apparatus according to claim 2, wherein the number is smaller than the number of the introduction holes. 4. The process chamber of the film forming apparatus according to claim 3, wherein the closing member is formed by a bolt inserted into the introduction hole and a nut used for tightening the bolt. 5. The process chamber of the film forming apparatus according to claim 3, wherein the closing member is made of polytetrafluoroethylene. 6. The process chamber of the film forming apparatus according to claim 1, further comprising a plurality of partition plates provided so as to extend from the current plate toward the support member. 7. A state in which the process chamber, a support member arranged in the process chamber for supporting a substrate, and a driving unit for rotationally driving the support member are provided, and the support member supporting the substrate is rotated. In the film forming apparatus, which supplies a film forming gas toward the substrate to form a film on the substrate, the process chamber is provided in a chamber main body accommodating the supporting member and a side portion of the chamber main body. A flow regulating plate having a plurality of introduction holes for introducing the film forming gas into the chamber body, wherein the film forming gas flows in the flow regulating plate against the rotation of the support member. The total opening area of the introduction holes provided in the first region corresponding to the side is provided in the second region corresponding to the side where the film forming gas flows along with the rotation of the support member. Larger deposition apparatus than the total opening area of the serial introduction hole. 8. The film forming apparatus according to claim 7, further comprising a heating unit that is disposed outside the process chamber and that heats the substrate supported by the supporting member. 9. A film forming method for forming a film on the substrate by supplying a film forming gas toward the substrate while a supporting member supporting the substrate is rotated, When the gas is supplied, the flow rate of the film forming gas supplied to the side on which the film forming gas flows against the rotation of the substrate flows so that the film forming gas follows the rotation of the supporting member. A film forming method of increasing the flow rate of the film forming gas supplied to the side.