JP2003124115A5 - - Google Patents

Claims (39)

A nitride in which a plurality of second regions having a second average dislocation density higher than the first average dislocation density are regularly arranged in a first region made of a crystal having a first average dislocation density. A method of manufacturing a structural substrate using a system III-V compound semiconductor substrate,
A structure substrate manufacturing method, wherein the structure substrate structure is formed so as not to pass over the second region. The structure substrate manufacturing method according to claim 1, wherein the position and orientation of the structure of the structure substrate are determined so as not to pass over the second region. The method for manufacturing a structural substrate according to claim 1, wherein the plurality of second regions are periodically arranged. The method of manufacturing a structural substrate according to claim 1, wherein the structure of the structural substrate and the plurality of second regions are periodically arranged. The structure period of the structure substrate is w ₁ , where w ₂ is the period of the plurality of second regions, w ₂ = n × w ₁ (where n is a natural number). 5. A method for producing a structural substrate according to 4. The structure substrate is characterized in that w ₁ = n × w ₂ (where n is a natural number) where w ₁ is a structure period of the structure substrate and w ₂ is a period of the plurality of second regions. 5. A method for producing a structural substrate according to 4. The structure substrate manufacturing method according to claim 1, wherein the structure of the structure substrate is an active region of an element. The structure substrate manufacturing method according to claim 1, wherein the structure of the structure substrate is a mask pattern used for lateral selective growth. The method for manufacturing a structural substrate according to claim 3, wherein the plurality of second regions are periodically arranged in a hexagonal lattice pattern. The method for manufacturing a structural substrate according to claim 3, wherein the plurality of second regions are periodically arranged in a rectangular lattice shape. The method for manufacturing a structural substrate according to claim 3, wherein the plurality of second regions are periodically arranged in a square lattice pattern. The method for manufacturing a structural substrate according to claim 1, wherein an interval between the two second regions adjacent to each other is 20 μm or more. The method for manufacturing a structural substrate according to claim 1, wherein an interval between the two adjacent second regions is 50 μm or more. The method for manufacturing a structural substrate according to claim 1, wherein an interval between two adjacent second regions is 100 μm or more. The method of manufacturing a structural substrate according to claim 3, wherein the period of the second region is 20 μm or more. The method for manufacturing a structural substrate according to claim 3, wherein the period of the second region is 50 μm or more. The method for manufacturing a structural substrate according to claim 3, wherein the period of the second region is 100 μm or more. The method for manufacturing a structural substrate according to claim 1, wherein the second region penetrates the nitride III-V compound semiconductor substrate. The method for manufacturing a structural substrate according to claim 1, wherein the second region has an indefinite polygonal columnar shape. A third region having a third average dislocation density higher than the first average dislocation density and lower than the second average dislocation density is provided between the first region and the second region. The method for manufacturing a structural substrate according to claim 1, wherein: The structure substrate manufacturing method according to claim 20, wherein the structure of the structure substrate is formed so as not to pass over the second region and the third region. The diameter of the said 2nd area | region is 10 micrometers or more and 100 micrometers or less. The manufacturing method of the structure board | substrate of Claim 1 characterized by the above-mentioned. The diameter of the said 2nd area | region is 20 micrometers or more and 50 micrometers or less. The manufacturing method of the structure board | substrate of Claim 1 characterized by the above-mentioned. 21. The method of manufacturing a structural substrate according to claim 20, wherein the diameter of the third region is 20 μm or more and 200 μm or less larger than the diameter of the second region. The diameter of the said 3rd area | region is 40 micrometers or more and 160 micrometers or less larger than the diameter of the said 2nd area | region. The manufacturing method of the structure board | substrate of Claim 20 characterized by the above-mentioned. 21. The method of manufacturing a structural substrate according to claim 20, wherein the diameter of the third region is 60 μm or more and 140 μm or less larger than the diameter of the second region. The method for manufacturing a structural substrate according to claim 1, wherein the average dislocation density in the second region is five times or more the average dislocation density in the first region. The method for producing a structural substrate according to claim 1, wherein an average dislocation density in the second region is 1 × 10 ⁸ cm ⁻² or more. 2. The structure according to claim 1, wherein the average dislocation density of the first region is 2 × 10 ⁶ cm ⁻² or less, and the average dislocation density of the second region is 1 × 10 ⁸ cm ⁻² or more. A method for manufacturing a substrate. The average dislocation density of the first region is 2 × 10 ⁶ cm ⁻² or less, the average dislocation density of the second region is 1 × 10 ⁸ cm ⁻² or more, and the average dislocation density of the third region is 1 ×. ^{21. The} method of manufacturing a structural substrate according to claim 20, wherein the method is smaller than 10 ⁸ cm ^{−2 and} larger than 2 × 10 ⁶ cm ⁻² . The structure substrate manufacturing method according to claim 1, wherein the structure substrate is separated from the second region by 1 μm or more. The structure substrate manufacturing method according to claim 1, wherein a structure of the structure substrate is separated from the second region by 10 μm or more. The structure substrate manufacturing method according to claim 1, wherein a structure of the structure substrate is separated from the second region by 100 μm or more. 2. The structure substrate according to claim 1, wherein the structure is formed by growing a nitride III-V compound semiconductor layer on the nitride III-V compound semiconductor substrate. Production method. The nitride-based III-V compound semiconductor substrate is _{Al X B y Ga 1-xyz} In z As u N 1-uv P v ( however, 0 ≦ x ≦ 1,0 ≦ y ≦ 1,0 ≦ z ≦ 1 The method according to claim 1, wherein: 0 ≦ u ≦ 1, 0 ≦ v ≦ 1, 0 ≦ x + y + z <1, 0 ≦ u + v <1). The nitride-based III-V compound semiconductor substrate is _{Al X B y Ga 1-xyz} In z N ( However, 0 ≦ x ≦ 1,0 ≦ y ≦ 1,0 ≦ z ≦ 1,0 ≦ x + y + z <1) The method for manufacturing a structural substrate according to claim 1, comprising: The nitride-based III-V compound semiconductor substrate is _{Al X Ga 1-xz In z} N ( However, 0 ≦ x ≦ 1,0 ≦ z ≦ 1) structure substrate according to claim 1, wherein in that it consists Manufacturing method. The method for manufacturing a structural substrate according to claim 1, wherein the nitride III-V compound semiconductor substrate is made of GaN. 2. The structure according to claim 1, wherein a plurality of portions where the interval and / or arrangement of the second regions are different from the surrounding portions are provided, and mask alignment is performed using these portions as alignment marks. A method for manufacturing a substrate.