JP2003115658A - Manufacturing method of wiring board, filling inserting method, wiring board and element package - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide the manufacturing method of a wiring board having a remarkably fine conductive member. SOLUTION: The manufacturing method of the wiring board having a through hole is provided with a substrate preparing process for preparing a first substrate having a first face and a second face, a through hole forming process for forming the through hole passing through the first substrate from the first face to the second face and a filling inserting process for inserting solid filling into the through hole.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wiring board manufacturing method, a filler insertion method, a wiring board, and a device package. In particular, the present invention relates to a method for manufacturing a wiring board having a very fine conductive member.

[0002]

2. Description of the Related Art As a conventional wiring board having a through hole provided in a substrate and a conductive member provided in the through hole, after inserting a wire into the through hole, a gap between the wire and the through hole is made of resin. There is a wiring board manufactured by sealing with, for example.

[0003]

With the recent miniaturization of micromachines, for example, development of a wiring board having a fine conductive member for supplying electric power to the micromachine and / or a conductive member provided at a fine pitch. Is desired.

However, in the conventional wiring board, it is necessary to provide a through hole in the board and insert the wire into the through hole. In order to insert the wire into the through hole, the diameter of the wire needs to have a certain thickness, and thus there is a limit to miniaturization of the wire. Therefore, it is extremely difficult to miniaturize the wiring board.

Therefore, it is an object of the present invention to provide a method for manufacturing a wiring board, a method for inserting a filler, a wiring board, and an element package which can solve the above problems. This object is achieved by a combination of features described in independent claims of the invention. The dependent claims define further advantageous specific examples of the present invention.

[0006]

That is, according to a first aspect of the present invention, there is provided a method of manufacturing a wiring board having a through hole, wherein a first board having a first surface and a second surface is prepared. And a through hole forming step of forming a through hole penetrating the first substrate from the first surface to the second surface, and a filling material inserting step of inserting a solid filling material into the through hole. . The method may further include a plating step of plating the surface of the filler inserted in the through hole and the inner wall of the through hole.

The method further comprises an elastic film forming step of forming an elastic film having a predetermined elastic coefficient on the inner wall of the through hole, and the filling material inserting step includes inserting a filling material having an elastic coefficient larger than the predetermined elastic coefficient. Good.

In the through hole forming step, a tapered through hole may be formed. The through hole forming step may form a through hole having a cross section smaller than the maximum diameter of the filling material.

In the filling material inserting step, a pressure reducing step for lowering the pressure applied to the second surface to a pressure lower than the pressure applied to the first surface, and the first step
And a filler supplying step of supplying the spherical filler to the through hole from the surface side.

The filling material inserting step may further include a pressing step of pressing the spherical filling material supplied to the through hole.
The pressing step may planarize the surfaces of the first surface and the spherical filler. In the filling material inserting step, a conductive filling material may be inserted.

The method may further include a conductive film forming step of forming a conductive film on the inner wall of the through hole. A filling material forming step of forming a filling material on the second substrate may be further included, and the filling material inserting step may press the second substrate to insert the filling material into the through hole. The method may further include a substrate detaching step of detaching the second substrate from the filling material.

According to a second aspect of the present invention, there is provided a method of manufacturing a wiring board having a through hole, the method comprising the steps of preparing a substrate having a first surface and a second surface, and The step of forming a through hole penetrating the substrate on the second surface, the step of forming a conductive film on the inner wall of the through hole and the first surface, and the conductive film so as to surround the through hole on the first surface. Forming a flexible member.

According to a third aspect of the present invention, there is provided a method of manufacturing a wiring board having a through hole, which comprises a step of preparing a board having a first surface and a second surface, The step of forming a through hole penetrating the substrate on the second surface, the step of forming a conductive film on the inner wall of the through hole, the step of filling the through hole with a filling material, the first surface and the surface of the filling material. And a step of removing the filling material.

According to the fourth aspect of the present invention, in the substrate having the first surface and the second surface, the filling material is inserted into the through hole penetrating from the first surface to the second surface. The apparatus is provided with a filling material supply unit that supplies a filling material to the substrate from the first surface side, and a decompression unit that makes the pressure applied to the second surface lower than the pressure applied to the first surface.

A pressing portion for pressing the filler inserted in the through hole from the first surface side may be further provided. The filling supply unit may supply the filling while moving along the first surface of the substrate.

[0016] A holding unit for holding and moving the substrate may be further provided, and the filling material supply unit may supply the filling material to the substrate being moved by the holding unit. The holding unit may include a rotating unit that rotates the substrate, and the filling material supply unit may supply the filling material near the rotation center of the substrate.

A pressure measuring unit for measuring the pressure applied to the second surface may be further provided, and the filling material supply unit may stop the supply of the filling material when the measured pressure is lower than a predetermined value.

According to a fifth aspect of the present invention, a wiring board is provided with a substrate having a through hole and a conductive spherical member provided in the through hole.

According to a sixth aspect of the present invention, there is provided a wiring board having a through hole penetrating from the first surface to the second surface, and the first surface having a small number of through holes. And a conductive member provided so as to close the.

According to a seventh aspect of the present invention, there is provided an element package for accommodating an element, the wiring board having a through hole and a conductive member provided so as to close at least one end of the through hole. Provided on the upper surface of the protrusion so as to form a protrusion provided on the wiring board so as to surround the region where the through hole is provided and a space closed with the wiring substrate and the protrusion. A lid portion and an element provided in the closed space and electrically connected to the conductive member.

The above summary of the invention does not enumerate all the necessary features of the present invention, and sub-combinations of these feature groups can also be the invention.

[0022]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described through embodiments of the invention, but the following embodiments do not limit the claimed invention, and the features described in the embodiments Not all combinations are essential to the solution of the invention.

FIG. 1 shows an intermediate step of the method for manufacturing a wiring board according to the first embodiment of the present invention. FIG. 1A shows a step of preparing the substrate 100. In this embodiment, the substrate 100 is preferably a glass substrate. Also,
The substrate 100 may be an insulating substrate such as a silicon nitride substrate or a ceramic substrate.

In FIG. 1B, a through hole 101 is formed in a substrate 100.
The process of forming the is shown. The through hole 101 has the first surface 10
3 to the second surface 105 through the substrate 100. Further, it is desirable that the through hole 101 be formed so as to have a tapered shape such that the cross section becomes narrower from the first surface 103 to the second surface 105. In this case, the through hole 101 is formed to have a cross section smaller than the maximum diameter of the filling material 106 described later. Also, the through hole 101
Is formed such that the central axis of the through hole 101 is substantially perpendicular to the first surface 103 and / or the second surface 105. Further, the through hole 101 may be formed such that the central axis of the through hole 101 is oblique with respect to the first surface 103 and / or the second surface 105.

FIG. 1C shows a step of forming the elastic film 104 on the inner wall of the through hole 101. First, the adhesion film 102 is formed on the inner wall of the through hole 101. The adhesion film 102 is preferably formed of a material having strong adhesion to the substrate 100, and is formed of, for example, chrome. Then, the elastic film 104 is formed on the adhesion layer 102. Elastic membrane 104
Preferably has an elastic modulus smaller than that of the filling material 106 described later. Also, the elastic film 104
Is preferably formed of a material having heat resistance,
For example, it is formed of resin such as polyimide.

The adhesion film 102 is formed by a physical vapor deposition method such as a sputtering method or a vapor deposition method to scatter the material forming the adhesion film 102 in the direction from the first surface 103 toward the second surface 105 to form a through hole. It is formed on the inner wall of 101. The elastic film 104 is formed on the inner wall of the through hole 101 by, for example, a spin coating method. In this case, the method further includes the step of removing the elastic film 104 formed on the first surface 103.

FIG. 1D shows the step of supplying the solid filling material 106 to the through hole 101. The filling material 106 has a spherical shape and is supplied to the through hole 101 from the first surface 103 side. That is, the filling material 106 is supplied from the direction in which the opening of the through hole 101 having the tapered shape is large. The filling material 106 is preferably a material having high conductivity, and is formed of, for example, copper, gold, aluminum, nickel or the like.

FIG. 1E shows a step of inserting the solid filling material 106 into the through hole 101. First, the first surface 103
By lowering the pressure applied to the second surface 105 to be lower than the pressure applied to the second surface 105, the filling material 106 is sucked toward the second surface 105. For example, by a vacuum pump, the second surface 105
Air is exhausted from the space formed by and the pressure applied to the second surface 105 is reduced. Then, the filler 106 sucked into the through hole 101 is pressed from the first surface 103 side,
The surfaces of the first surface 103 and the filling material 106 are flattened.
At this time, the elastic film 104 is pressed by the pressed filler 106.
Is deformed, and the airtightness of the through hole 101 is secured.

In another example, the filling material 106 supplied to the through hole 101 may be pressed from the first surface 103 side and pushed into the through hole 101. In addition, the pressed filling material 106 may be deformed.

FIG. 1F shows a step of forming the conductive film 108. The conductive film 108 is formed on the surface of the filler 106 inserted into the through hole 101, the inner wall of the through hole 101, and the first surface 103. In addition, the conductive film 110 is
It is formed on the surface of the filler 106 inserted into the through hole 101, the inner wall of the through hole 101, and the second surface 105. The conductive films 108 and 110 are scattered on the material forming the conductive film 108 or 110 by physical vapor deposition such as a sputtering method or a vapor deposition method, so that the surface of the filling material 106, the inner wall of the through hole 101, and the first film. The first surface 103 or the surface of the filling material 106, the inner wall of the through hole 101, and the second surface 105 are formed. The conductive film 108 or 110 is
The substrate 100 is made of, for example, titanium, platinum, gold, or the like.
Is a glass substrate, it is preferable that titanium, platinum, and gold are laminated in this order in order to improve the adhesion.

FIG. 1G shows conductive members 116 and 11.
8 shows a step of forming 8. First, a resist film 112 is formed on the conductive film 108. The resist film 112 is preferably a photoresist that reacts with light having a predetermined wavelength such as ultraviolet light. In this case, the resist film 1
12 is preferably a positive photoresist. Further, the resist film 112 may be a resist that reacts with an electron beam or an X-ray.

Next, part of the resist film 112 is removed by exposure and development, or etching. Then, in the region where the resist film 112 is partially removed, the conductive films 108 and 110 are plated, whereby the conductive member 1 is formed.
16 and 118 are formed. Conductive members 116 and 11
8 is preferably a material having high conductivity, and is formed of, for example, nickel, copper, gold or the like.

FIG. 1H shows resist films 112 and 11
4 and the step of removing the conductive films 108 and 110 are shown. First, the resist film 112 is removed by exposure and development, or etching. Then, the conductive films 108 and 110 are removed by etching.

According to this embodiment, the solid filling 106
By filling the through hole 101 with
The time required for filling 1 can be reduced. Also,
By filling the through holes 101 with the solid filler 106, durability and heat resistance can be improved. Further, the elastic film 10 having a small elastic coefficient is formed on the inner wall of the through hole 101.
By forming 4 and inserting the filling material 106, the airtightness of the through hole 101 can be increased. Further, by forming the elastic film 104 having a small elastic coefficient on the inner wall of the through hole 101 and inserting the filler 106, it is possible to reduce the variation in the confidentiality of each of the plurality of through holes 101 provided in the substrate 100. You can

FIG. 2 shows an example of the structure of a filler insertion device 200 used in the method for manufacturing a wiring board according to this embodiment. The filling material inserting device 200 applies the filling material 106 to the substrate 10.
0, and a pressing unit 2 for pressing the filler 106 supplied to the through hole 101 of the substrate 100.
04, a holding unit 206 that holds the substrate 100, a pressure reducing unit 208 that lowers the pressure applied to the second surface 105, and a second
Measuring unit 210 for measuring the pressure applied to the surface 105
And a chamber 212. In addition, the filler insertion device 200 may further include a recovery unit 214 that recovers the filler 106 dropped from the substrate 100.

The filling material supply unit 201 supplies the filling material 106 to the substrate 100 from the first surface 103 side. The filling material supply unit 201 moves along the first surface 103 of the substrate 100 while filling the filling material 1 on the substrate 100 from the first surface 103 side.
06 may be supplied.

The holding unit 206 may move the substrate 100, and the filling material supply unit 201 may supply the filling material 106 to the substrate 100 moved by the holding unit 206. Further, the holding unit 206 may include a rotating unit that rotates the substrate 100, and the filling material supply unit 201 may supply the filling material 106 near the rotation center of the substrate 100.

The pressure reducing section 204 lowers the pressure applied to the second surface 105 to be lower than the pressure applied to the first surface 103, so that the filling material 106 is sucked into the through hole 101. The decompression unit 208 is, for example, a vacuum pump, and the substrate 1
00, the holding portion 206, and the chamber 212 to evacuate air to reduce the pressure applied to the second surface 105.

The pressure measuring section 210 measures the pressure applied to the second surface 105. Then, by measuring the pressure applied to the second surface 105 by the pressure measuring unit 210,
Confirm that the filling material 106 has been inserted into the through hole 101. Then, for example, the filling material supply unit 201 stops the supply of the filling material 106 when the pressure applied to the second surface 105 becomes lower than a predetermined value.

The pressing portion 204 presses the filling material 106 sucked into the through hole 101 from the first surface 103 side. Then, the pressing portion 204 includes the first surface 103 and the filler 10.
The surface of 6 is flattened.

According to this embodiment, the pressure applied to the second surface 105 of the substrate 100 is made lower than the pressure applied to the first surface 103 side, and the filling material 106 is sucked and inserted into the through hole 101. The filler 106 can be easily and quickly inserted into the plurality of through holes 101 provided in the substrate 100. Furthermore, by monitoring the pressure applied to the second surface 105, it is possible to easily confirm that the filler 106 has been inserted into all of the plurality of through holes 101. Therefore, a wiring board having high airtightness can be manufactured.

FIG. 3 shows an intermediate step in the method for manufacturing a wiring board according to the second embodiment of the present invention. FIG. 3A shows a step of preparing the substrate 300. In this embodiment, the substrate 300 is preferably a glass substrate. Also,
The substrate 300 may be an insulating substrate such as a silicon nitride substrate or a ceramic substrate.

In FIG. 3B, a through hole 302 is formed in the substrate 300.
The process of forming the is shown. The through hole 302 has the first surface 30.
3 to the second surface 305 through the substrate 300. Further, the through hole 302 is preferably formed to have a tapered shape such that the cross section becomes narrower from the first surface 303 toward the second surface 305. In this case, the through hole 302 is formed to have a cross section smaller than the maximum diameter of the filling material 314 described later. Also, the through hole 302
Is formed such that the central axis of the through hole 302 is substantially perpendicular to the first surface 303 and / or the second surface 305. Further, the through hole 302 may be formed such that the central axis of the through hole 302 is oblique to the first surface 303 and / or the second surface 305.

FIG. 3C shows a step of forming a conductive film 304 on the inner wall of the through hole 302. The conductive film 304 is
A resist film is formed in a region other than the region where the conductive film 304 is to be formed, and the material forming the conductive film 304 is scattered by, for example, physical vapor deposition such as a sputtering method or a vapor deposition method. It is formed on the first surface 303 and the second surface 305. Then, the resist film formed in a region other than the region where the conductive film 304 is to be formed is removed.

In another example, the conductive film 304 is formed by scattering the material forming the conductive film 304 by physical vapor deposition such as sputtering or vapor deposition.
Inner wall of through hole 302, first surface 303, and second surface 3
Formed in 05. Then, a resist film is formed in a region where the conductive film 304 is to be formed, and the conductive film 304 other than the region where the conductive film 304 is to be formed is removed by etching. Then, the resist film formed in the region where the conductive film 304 is to be formed is removed. In addition, the conductive film 304
May be formed by plating the inner wall of the through hole 302. The conductive film 304 is formed of, for example, titanium, platinum, gold or the like.

FIG. 3D shows a step of forming the filling material 314. The mask 30 is formed on the first surface 307 of the substrate 308.
6 is formed. Then, a part of the mask 306 is removed by etching. The substrate 308 is preferably a single crystal substrate such as a silicon substrate, and the mask 306 is preferably a silicon oxide film.

A conductive film 310 and a resist film 312 are formed on the second surface 309 of the substrate 308. The resist film 312 is preferably a photoresist that reacts with light having a predetermined wavelength such as ultraviolet light. In this case, the resist film 312 is preferably a positive photoresist. Further, the resist film 312 may be a resist that reacts with an electron beam or an X-ray.

Next, a part of the resist film 312 is removed by exposure and development or etching to form an opening 311. Then, the filler 314 is formed by plating the opening 311 with a metal material. Further, the resist film 312 is removed by exposure and development, or etching. The opening 311 is preferably tapered, and the filling 314 is preferably frustoconical. The filler 314 is preferably a material having high conductivity, and is formed of, for example, copper, gold, aluminum, nickel, or the like. In addition, the conductive film 310 is formed of, for example, gold, an alloy of gold and chromium, or the like.

FIG. 3E shows a step of inserting a solid filling material 314 into the through hole 302. The filling 314 is the first
The surface 303 side is inserted into the through hole 302. That is, the filler 314 is inserted from the direction in which the opening is larger in the through hole 302 having a tapered shape. In addition, the truncated cone-shaped filling material 314 starts from the end portion having a large cross-sectional area and ends at the through hole 3
It is inserted in 02.

FIG. 3F shows a step of pressing the solid filler 314. The filler 314 is inserted into the through hole 302 by pressing the substrate 308. At this time, the pressed filler 114 and the conductive film 304 are deformed to ensure the airtightness of the through hole 302.

FIG. 3G shows the filling material 314 to the substrate 30.
8 shows the step of removing 8. Substrate 3 near packing 314
08 and the conductive film 310 are removed by etching.
For example, by pouring a developing solution from the removed region of the mask 306, the substrate 308 and the conductive film 310 near the filling material 314 are removed by etching. Then, the mask 306, the substrate 308, and the conductive film 310 are filled with the filler 3
Remove from 14.

According to this embodiment, the solid filling 314
By filling the through hole 302 with
The time required for filling 2 can be reduced. Also,
By pressing the substrate 308 on which the filling material 314 is formed and inserting the filling material 314 into the through hole 302, the airtightness of the through hole 302 can be increased.

FIG. 4 shows intermediate steps of a method of manufacturing a wiring board according to the third embodiment of the present invention. FIG. 4A shows a step of preparing the substrate 400. In this embodiment, the substrate 400 is preferably a glass substrate. Also,
The substrate 400 may be an insulating substrate such as a silicon nitride substrate or a ceramic substrate.

FIG. 4B shows a through hole 402 in the substrate 400.
The process of forming the is shown. The through hole 402 has the first surface 40.
3 to the second surface 405 through the substrate 400. Further, the through hole 402 is formed to have a tapered shape such that the cross section becomes narrower from the first surface 403 to the second surface 405. Further, it is desirable that the through hole 402 be formed to have a cross section smaller than the maximum diameter of the filling material 412 described later. In this case, the through hole 402
Is formed such that the central axis of the through hole 402 is substantially perpendicular to the first surface 403 and / or the second surface 405. Further, the through hole 402 may be formed such that the central axis of the through hole 402 is oblique with respect to the first surface 403 and / or the second surface 405.

FIG. 4C shows a step of forming the filling material 412. The mask 40 is formed on the first surface 407 of the substrate 406.
4 is formed. Then, part of the mask 404 is removed by etching. The substrate 406 is preferably a single crystal substrate such as a silicon substrate, and the mask 404 is preferably a silicon oxide film.

A conductive film 408 and a resist film 410 are formed on the second surface 409 of the substrate 406. The resist film 410 is preferably a photoresist that reacts with light having a predetermined wavelength such as ultraviolet light. In this case, the resist film 410 is preferably a positive photoresist. Further, the resist film 410 may be a resist that reacts with an electron beam or an X-ray.

Next, a part of the resist film 410 is removed by exposure and development, or etching to form an opening 411. Then, the filler 412 is formed by plating the opening 411 with a metal material. Further, the resist film 410 is removed by exposure and development, or etching. The opening 411 is preferably tapered,
The filling 412 is preferably frustoconical. The filler 412 is preferably a material having high conductivity, and is formed of, for example, copper, gold, aluminum, nickel, or the like. The conductive film 408 is formed of, for example, gold, an alloy of gold and chromium, or the like.

FIG. 4D shows a step of inserting the solid filler 412 into the through hole 402. The filling 412 is the first
The surface 403 side is inserted into the through hole 402. That is, the filler 412 is inserted from the direction in which the opening is larger in the through hole 402 having a tapered shape. In addition, the frustum-shaped filling material 412 starts from the end having a large cross-sectional area and ends at the through hole 4
It is inserted in 02.

FIG. 4E shows a step of pressing the solid filler 412. The filling 412 is inserted into the through hole 402 by pressing the substrate 406.

FIG. 4 (f) shows the filling material 412 to the substrate 40.
6 shows the step of removing 6. Substrate 4 near the filling 412
06 and the conductive film 408 are removed by etching.
For example, the substrate 406 and the conductive film 408 near the filling 412 are removed by wet etching. Then, the mask 404, the substrate 406, and the conductive film 408 are separated from the filling 412.

FIG. 4G shows a step of plating the filling material 412. First, the insulating member 414 is filled between the substrate 400 and the filling 412. The insulating member 414 is formed of a resin such as silicon oxide or polyimide. Then, a conductive member 416 is formed on the filling 412 on the first surface 403 side. The conductive member 416 is filled with the filler 412.
Is preferably formed by plating. The conductive member 416 is, for example, gold, an alloy of gold and chromium, or the like.

In addition, the second surface 40 of the filling 412
The conductive member 418 is formed on the fifth side. The conductive member 416 is
For example, by physical vapor deposition such as sputtering method or vapor deposition method,
The material forming the conductive member 416 is filled with the filler 412 and the second material.
It is preferable that the filler 412, the inner wall of the through hole 402, and the second surface 405 are formed by being scattered on the surface 405. The conductive member 418 is the conductive member 41.
It may be formed by plating 8. The conductive member 418 is, for example, gold, an alloy of gold and chromium, or the like.

According to this embodiment, the solid filling 412
By filling the through hole 402 with
The time required for filling 2 can be reduced. Also,
By filling the insulating member 414 between the filler 412 and the substrate 400, the airtightness of the through hole 402 can be increased.

FIG. 5 shows an intermediate step in the method for manufacturing a wiring board according to the fourth embodiment of the present invention. FIG. 5A shows a step of preparing the substrate 500. In this embodiment, the substrate 500 is preferably a glass substrate. Also,
The substrate 500 may be an insulating substrate such as a silicon nitride substrate or a ceramic substrate.

In FIG. 5B, a through hole 502 is formed in the substrate 500.
The process of forming the is shown. The through hole 502 has a first surface 50.
3 to the second surface 505 through the substrate 500. Further, it is desirable that the through hole 502 is formed so as to have a tapered shape such that the cross section becomes narrower from the first surface 503 to the second surface 505. In this case, in the through hole 502, the central axis of the through hole 502 is the first surface 503.
And / or is formed so as to be substantially perpendicular to the second surface 505. Further, the through hole 502 may be formed such that the central axis of the through hole 502 is oblique to the first surface 503 and / or the second surface 505.

FIG. 5C shows a step of forming a conductive film 504 on the inner wall of the through hole 502. The conductive film 504 is
For example, by physical vapor deposition such as sputtering method or vapor deposition method,
By scattering the material forming the conductive film 504 in the direction from the first surface 503 toward the through hole 502 and in the direction from the second surface 505 toward the through hole 502, the inner wall of the through hole 502, the first surface It is preferably formed on the surface 503 and the second surface 505. In addition, the conductive film 504 is
It may be formed by plating the inner wall of the through hole 502. The conductive film 504 is formed of, for example, titanium, platinum, gold or the like. As the conductive film 504, a resist film is formed in a region other than the region where the conductive film 504 is to be formed, and the conductive film 5 is formed by physical vapor deposition such as sputtering or vapor deposition.
By scattering the material forming 04, the through hole 5
02 inner wall, a first surface 503, and a second surface 505. Then, the resist film formed in a region other than the region where the conductive film 504 is to be formed is removed.

In another example, the conductive film 504 is formed by scattering the material forming the conductive film 504 by physical vapor deposition such as sputtering or vapor deposition.
Inner wall of through hole 502, first surface 503, and second surface 5
Formed in 05. Then, a resist film is formed in a region where the conductive film 504 is to be formed, and the conductive film 504 other than the region where the conductive film 504 is to be formed is removed by etching. Then, the resist film formed in the region where the conductive film 504 is to be formed is removed. In addition, the conductive film 504
May be formed by plating the inner wall of the through hole 502. The conductive film 504 is formed of, for example, titanium, platinum, gold or the like.

FIG. 5D shows a step of forming a conductive member 514 surrounding the through hole 502. A conductive film 508, a conductive member 510, an alignment section 512, and a conductive member 514 are formed on the surface 507 of the substrate 506. The substrate 506 is preferably a single crystal substrate such as a silicon substrate. The conductive film 508 is preferably formed by physical vapor deposition such as sputtering or vapor deposition. The conductive film 508 is formed of, for example, gold, an alloy of gold and chromium, or the like. In addition, the conductive member 510 is
It is preferable that a part of the resist film formed on the conductive film 508 is removed by etching, and the region where the resist film is removed is plated with a metal material.

The conductive member 514 is used for the alignment portion 51.
It is formed so as to surround the periphery of 4. For example, the conductive member 514 is formed in a circular shape centering on the alignment portion 514. Alignment unit 512 and conductive member 514
Is preferably formed by removing a part of the resist film formed on the conductive member 510 by etching and plating a metal material in the region where the resist film is removed. Conductive member 510, alignment section 51
2 and the conductive member 514 are preferably formed of gold, for example.

FIG. 5E shows a step of pressure-bonding the conductive member 514 to the conductive film 504. Substrate 506 to substrate 50
The first surface 503 of the conductive member 514 to the first
Is thermocompression bonded to the conductive film 504 formed on the surface 503.
Accordingly, the conductive member 514 is formed on the first surface 503 so as to surround the periphery of the through hole 502, and the conductive member 514 and the conductive member 510 can close at least one end of the through hole 502. Further, the substrate 506 is brought close to the substrate 500 while monitoring the alignment section 512 in the direction from the second surface 505 side to the through hole 502 by the CCD.

Next, the substrate 506 and the conductive film 508 are removed by etching, and the substrate 506 and the conductive film 508 are removed.
Are separated from the conductive member 510.

In the above description, the conductive member 510 and the conductive member 514 are formed on the substrate 506, and the conductive member 514 is pressure-bonded to the conductive film 504 to close the lower end of the through hole 502. The conductive member 514 is formed on the conductive film 504 by plating, plating, or the like, and the substrate 506
The conductive member 510 formed on the conductive film 504 may be pressure-bonded to the conductive member 514 formed on the conductive film 504.

According to the present embodiment, the conductive member 510 and the conductive member 514 close at least one end of the through hole 502, so that the time required to seal the through hole 502 can be reduced. In addition, since the conductive film 504 and the conductive member 514 are thermocompression-bonded to close at least one end of the through hole 502, the airtightness of the through hole 502 can be increased. Further, by using the alignment part 512, the conductive member 514 can be pressure-bonded to an accurate position.

FIG. 6 shows an intermediate step in the method for manufacturing a wiring board according to the fifth embodiment of the present invention. FIG. 6A shows a step of preparing the substrate 600. In this embodiment, the substrate 600 is preferably a glass substrate. Also,
The substrate 600 may be an insulating substrate such as a silicon nitride substrate or a ceramic substrate.

FIG. 6B shows a through hole 602 formed in the substrate 600.
The process of forming the is shown. The through hole 602 has the first surface 60.
3 to the second surface 605 through the substrate 600. Further, it is desirable that the through hole 602 is formed so as to have a tapered shape such that the cross section becomes narrower from the first surface 603 to the second surface 605. In this case, in the through hole 602, the central axis of the through hole 602 is the first surface 603.
And / or is formed to be substantially perpendicular to the second surface 605. Further, the through hole 602 may be formed such that the central axis of the through hole 602 is oblique with respect to the first surface 603 and / or the second surface 605.

FIG. 6C shows a step of forming a conductive film 604 on the inner wall of the through hole 602. The conductive film 604 is
A resist film is formed in a region other than the region where the conductive film 604 is to be formed, and the material for forming the conductive film 604 is scattered by, for example, physical vapor deposition such as a sputtering method or a vapor deposition method. The second surface 605 is formed. Then, the resist film formed in a region other than the region where the conductive film 604 is to be formed is removed.

In another example, the conductive film 604 is formed by scattering the material forming the conductive film 604 by physical vapor deposition such as sputtering or vapor deposition.
It is formed on the inner wall of the through hole 602 and the second surface 605.
Then, a resist film is formed in a region where the conductive film 604 is to be formed, and the conductive film 604 other than the region where the conductive film 604 is to be formed is removed by etching. Then, the resist film formed in the region where the conductive film 604 is to be formed is removed. Further, the conductive film 604 may be formed by plating the inner wall of the through hole 602. Conductive film 6
04 is formed of, for example, titanium, platinum, gold or the like.

FIGS. 6D and 6E show a step of filling the through hole 602 with the filling material 608. A viscous filling 608 is formed on the surface of the substrate 606. And the substrate 6
00 second surface 605 against substrate 608, opening 6
The filling material 608 is embedded in 02. The filling 608 is a resin such as a photoresist, for example.

FIG. 6F shows a step of forming the conductive film 610 and the conductive member 614. The conductive film 610 is
For example, by physical vapor deposition such as sputtering method or vapor deposition method,
It is preferably formed on the first surface 603. The conductive film 610 is formed, for example, by stacking gold and chromium.

Next, the resist film 61 is formed on the conductive film 610.
Form 2. The resist film 612 is preferably a photoresist that reacts with light having a predetermined wavelength such as ultraviolet light. In this case, the resist film 612 is preferably a positive photoresist. Further, the resist film 612 may be a resist that reacts with an electron beam or an X-ray.

Next, part of the resist film 612 is removed by exposure and development, or etching. Then, in the region where the resist film 612 is partially removed, the conductive film 610 is plated to form the conductive member 614. The conductive member 614 is preferably made of a material having high conductivity, and is made of, for example, nickel, copper, gold or the like.

FIG. 6G shows a step of removing the resist film 612 and the conductive film 610. First, the resist film 6
12, and the conductive films 610 and 110 are removed by etching. Further, the substrate 606 and the filling material 608 are removed by etching. Further, the substrate 600 and the conductive film 610 may be anodically bonded by heating and applying a voltage.

In the above description, after forming the conductive film 604 in the through hole 602, the filling material 60 is filled in the through hole 602.
8 was buried and the conductive film 610 was formed on the first surface 603, but the filling material 608 was buried in the through hole 602,
The conductive film 610 may be formed on the surface 603, the filling 603 may be removed, and then the conductive film 604 may be formed on the through hole 602.

According to the present embodiment, by forming the conductive film 610 on the filling 608 and closing one end of the through hole 602, it is possible to reduce the time required to seal the through hole 602. . In addition, the substrate 600 and the conductive film 6
By anodic-bonding 10 and 10, a small amount of the through hole 602 and one end thereof are closed, so that the airtightness of the through hole 602 can be increased.

FIG. 7 shows the structure of an element package 700 according to the sixth embodiment of the present invention. Element package 70
0 includes a wiring board 702, a protrusion 704, a lid 706, and an element 708.

The wiring board 702 has a board 732, a through hole 710 penetrating the board 732 from the first surface 714 to the second surface 716, and a conductive member provided so as to close at least one end of the through hole 710. 712, and a fixed contact 724. The conductive member 712 exposed on the first surface 714 side
Are electrically connected to the element 708. The conductive member 712 exposed on the second surface 716 side is electrically connected to the outside of the element package 700. Wiring board 702
Is manufactured by the method of manufacturing a wiring board according to the first to fifth embodiments shown in FIGS. 1 to 6.

The projecting portion 704 surrounds the region where the through hole 710 is provided so as to surround the first surface 714 of the wiring board 702.
It is provided in. The protruding portion 702 is provided on the wiring board 702 and / or
Alternatively, it is formed substantially perpendicular to the lid portion 706. Further, the protruding portion 702 may be formed obliquely with respect to the wiring board 702 and / or the lid portion 706. Further, the upper surface of the protruding portion 704 is formed substantially parallel to the wiring board 702 and / or the lid portion 706. In addition, the upper surface of the protruding portion 704 may be formed obliquely with respect to the wiring board 702 and / or the lid portion 706.

The lid portion 706 has a silicon substrate 719, a silicon oxide film 718, and a silicon substrate 720.
It is provided on the upper surface of the protrusion 704 so as to form a closed space together with the wiring board 702 and the protrusion 704. The lid portion 706 is formed substantially parallel to the wiring board 702. Further, the lid portion 706 may be formed obliquely with respect to the wiring board 702.

The element 708 is, for example, an actuator such as a switch having a bimetal structure, and has a fixed contact 72.
2, cantilever 726, electrode 728, and bump 730
Have. The element 708 includes a wiring board 702 and a protrusion 70.
4 and a closed space formed by the lid portion 706. The element 708 is electrically connected to the conductive member 712 exposed on the first surface 714 side of the wiring board 702.

According to this embodiment, for example, the wiring board 70
Minute conductive member 712 provided in second through hole 710
Since electric power can be supplied to the element 708 from the outside through the wiring, wiring provided on the first surface 714 of the wiring board 702 can be reduced. Therefore, a very fine micromachine can be provided. Also,
According to the wiring board 702 manufactured by the wiring board manufacturing method according to the first to fifth embodiments shown in FIGS. 1 to 6, the wiring board 702, the protruding portion 704, and the lid portion 70.
It is possible to provide an element package in which the space formed by 6 has a very high airtightness.

Although the present invention has been described using the embodiments, the technical scope of the present invention is not limited to the scope described in the above embodiments. Various changes or improvements can be added to the above-described embodiment. It is apparent from the scope of the claims that the embodiments added with such changes or improvements can be included in the technical scope of the present invention.

[0092]

As is apparent from the above description, according to the present invention, it is possible to provide a wiring board having a very fine conductive member.

[Brief description of drawings]

FIG. 1 is a diagram showing an intermediate step of a method of manufacturing a wiring board according to a first embodiment.

FIG. 2 is a diagram showing an example of a configuration of a filler insertion device 200 according to the first embodiment.

FIG. 3 is a diagram showing an intermediate step of the method of manufacturing the wiring board according to the second embodiment.

FIG. 4 is a diagram showing an intermediate step of a method of manufacturing a wiring board according to a third embodiment.

FIG. 5 is a diagram showing an intermediate step of a method of manufacturing a wiring board according to a fourth embodiment.

FIG. 6 is a diagram showing an intermediate step of a method of manufacturing a wiring board according to a fifth embodiment.

FIG. 7 is a diagram showing a structure of an element package 700 according to a sixth embodiment.

[Explanation of symbols]

100 ... Substrate, 101 ... Through hole, 102 ...
Adhesive film, 103 ... First surface, 104 ... Elastic film,
105 ... Second surface, 106 ... Filling material, 108 ...
..Conductive film, 110 ... Conductive film, 112 ... Resist film, 114 ... Resist film, 116 ... Conductive member, 118 ... Conductive member, 200 ... Filling material Insertion device, 201 ... Filling material supply unit, 204 ... Pressing unit, 206 ... Holding unit, 208 ... Decompression unit, 21
0 ... Pressure measuring unit, 212 ... Chamber, 214 ...
..Recovery section, 300 ... substrate, 302 ... through hole,
303 ... First surface, 304 ... Conductive film, 305
... second surface, 306 ... mask, 307 ... first surface, 308 ... substrate, 309 ... second surface, 3
10 ... Conductive film, 311 ... Opening portion, 312 ...
-Resist film, 314 ... Filling material, 400 ... Substrate, 402 ... Through hole, 403 ... First surface, 40
4 ... Mask, 405 ... Second surface, 406 ...
Substrate, 407 ... First surface, 408 ... Conductive film,
410 ... second surface, 411 ... opening, 412 ...
..Filling material, 414 ... Insulating member, 416 ... Conductive member, 418 ... Conductive member, 500 ... Substrate,
502 ... Through hole, 503 ... First surface, 504 ...
..Conductive film, 505 ... Second surface, 506 ... Substrate, 507 ... Surface, 508 ... Conductive film, 510
... Conductive member, 512 ... Alignment part, 51
4 ... Conductive member, 600 ... Substrate, 602 ...
Through hole, 603 ... First surface, 604 ... Conductive film, 605 ... Second surface, 606 ... Substrate, 608
... Filling material, 610 ... Conductive film, 612 ... Resist film, 614 ... Conductive member, 700 ... Element package, 702 ... Wiring board, 704 ... Projection portion, 706 ... Lid, 708 ... Element, 710 ...
・ Through hole, 712 ... Conductive member, 714 ... First
, 716 ... Second surface, 718 ... Silicon oxide film, 719 ... Silicon substrate, 720 ... Silicon substrate, 722 ... Movable contact, 724 ... Fixed contact, 726. ..Cantilevers, 728 ... Electrodes, 7
30 ... Bump, 732 ... Substrate

Claims (23)

[Claims] 1. A method of manufacturing a wiring board having a through hole, comprising: a board preparing step of preparing a first board having a first surface and a second surface; and a step of preparing the first surface from the second surface. A method of manufacturing a wiring board, comprising: a through hole forming step of forming a through hole penetrating the first substrate on a surface thereof; and a filling material inserting step of inserting a solid filling material into the through hole. 2. The method of manufacturing a wiring board according to claim 1, further comprising a plating step of plating a surface of the filler inserted into the through hole and an inner wall of the through hole. 3. An elastic film forming step of forming an elastic film having a predetermined elastic coefficient on an inner wall of the through hole, wherein the filling material inserting step includes the filling having an elastic coefficient larger than the predetermined elastic coefficient. The method for manufacturing a wiring board according to claim 1, wherein an object is inserted. 4. The method for manufacturing a wiring board according to claim 1, wherein the through hole forming step forms the tapered through hole. 5. The method of manufacturing a wiring board according to claim 4, wherein in the through hole forming step, the through hole having a cross section smaller than the maximum diameter of the filling material is formed. 6. The depressurizing step of lowering the pressure applied to the second surface below the pressure applied to the first surface in the filling material inserting step, and the spherical packing from the first surface side, The method of manufacturing a wiring board according to claim 1, further comprising: a filling material supplying step of supplying the through hole. 7. The method of manufacturing a wiring board according to claim 6, wherein the filling material inserting step further includes a pressing step of pressing the spherical filling material supplied to the through hole. 8. The method of manufacturing a wiring board according to claim 7, wherein the pressing step planarizes the surfaces of the first surface and the spherical filler. 9. The method of manufacturing a wiring board according to claim 1, wherein in the filling material inserting step, the conductive filling material is inserted. 10. The method of manufacturing a wiring board according to claim 1, further comprising a conductive film forming step of forming a conductive film on an inner wall of the through hole. 11. A filling material forming step of forming the filling material on a second substrate, wherein the filling material inserting step presses the second substrate to insert the filling material into the through hole. The method for manufacturing a wiring board according to claim 10, wherein: 12. The method of manufacturing a wiring board according to claim 11, further comprising a substrate separating step of separating the second substrate from the filling material. 13. A method of manufacturing a wiring board having a through hole, comprising: preparing a board having a first surface and a second surface; and the board from the first surface to the second surface. A step of forming the through hole penetrating through, a step of forming a conductive film on the inner wall of the through hole and the first surface, so as to surround the periphery of the through hole in the first surface,
And a step of forming a conductive member. 14. A method of manufacturing a wiring board having a through hole, comprising the steps of preparing a board having a first surface and a second surface, and from the first surface to the second surface. Forming the through hole penetrating the substrate, forming a conductive film on the inner wall of the through hole, filling the through hole with a filling material, the first surface and the filling material A method of manufacturing a wiring board, comprising: a step of forming a conductive film on a surface; and a step of removing the filling material. 15. A filling material insertion device for inserting a filling material into a through hole penetrating from the first surface to the second surface in a substrate having a first surface and a second surface, A filling supply unit configured to supply the filling from the first surface side to the substrate; and a decompression unit configured to reduce a pressure applied to the second surface to a pressure lower than a pressure applied to the first surface. Filling material insertion device. 16. The filler insertion device according to claim 15, further comprising a pressing portion that presses the filler inserted into the through hole from the first surface side. 17. The filling inserter according to claim 15, wherein the filling supply unit supplies the filling while moving along the first surface of the substrate. 18. The holding unit configured to hold and move the substrate, wherein the filling material supply unit supplies the filling material to the substrate moved by the holding unit. 15. The filler insertion device according to item 15. 19. The holding unit includes a rotating unit that rotates the substrate, and the filling material supplying unit supplies the filling material near a rotation center of the substrate. The filling insertion device described. 20. A pressure measuring unit for measuring the pressure applied to the second surface is further provided, and the filling material supply unit stops the supply of the filling material when the measured pressure is lower than a predetermined value. 16. The filling insertion device according to claim 15, wherein: 21. A wiring board, comprising: a board having a through hole; and a spherical member having conductivity provided in the through hole. 22. A wiring board having a through hole penetrating from a first surface to a second surface; and a wiring board provided so as to close at least one end of the through hole in the first surface. And a conductive member. 23. An element package for accommodating an element, the wiring board having a through hole and a conductive member provided so as to close at least one end of the through hole, and the through hole. A protrusion provided on the wiring board so as to surround a region; a lid provided on an upper surface of the protrusion so as to form a space closed with the wiring board and the protrusion; An element package provided in a space, comprising an element electrically connected to the conductive member.